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BSO130N03MSGXUMA1 BSO130N03MSGXUMA1 Infineon Technologies BSO130N03MS_G.pdf Description: MOSFET N-CH 30V 9A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Produkt ist nicht verfügbar
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BFR340FH6327 BFR340FH6327 Infineon Technologies INFNS14910-1.pdf?t.download=true&u=5oefqw Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 28dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Supplier Device Package: PG-TSFP-3-1
Part Status: Active
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BFR 340T E6327 BFR 340T E6327 Infineon Technologies BFR340T.pdf Description: RF TRANS NPN 9V 14GHZ PG-SC75-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 60mW
Current - Collector (Ic) (Max): 10mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
Supplier Device Package: PG-SC75-3D
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STL81005Z Infineon Technologies stl81004-5x_020101.pdf?t.download=true&u=5oefqw Description: LOW POWER 1550 NM FP LASER
Power (Watts): 50mW
Packaging: Bulk
Package / Case: Module
Wavelength: 1550nm
Current Rating (Amps): 120mA
Voltage - Input: 1.5V
Part Status: Active
Produkt ist nicht verfügbar
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CY22381SXI-174 CY22381SXI-174 Infineon Technologies cy22381_8.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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CY22381SXI-211 CY22381SXI-211 Infineon Technologies cy22381_8.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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CY22381SXI-146 CY22381SXI-146 Infineon Technologies cy22381_8.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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CY22381SXI-174T CY22381SXI-174T Infineon Technologies cy22381_8.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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BB 545 E7908 BB 545 E7908 Infineon Technologies bb545series_bb565series.pdf Description: DIODE VAR CAP 30V 20MA SOD-323
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2ED2304S06FXUMA1 2ED2304S06FXUMA1 Infineon Technologies Infineon-2ED2304S06F-DataSheet-v02_09-EN.pdf?fileId=5546d46264a8de7e0164d5356ddb3158 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
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2ED2304S06FXUMA1 2ED2304S06FXUMA1 Infineon Technologies Infineon-2ED2304S06F-DataSheet-v02_09-EN.pdf?fileId=5546d46264a8de7e0164d5356ddb3158 Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
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2ED2304S06FXLLA1 2ED2304S06FXLLA1 Infineon Technologies Infineon-2ED2304S06F-DataSheet-v02_05-EN.pdf?fileId=5546d46264a8de7e0164d5356ddb3158 Description: LEVEL SHIFT SOI
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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A2C00042866 A Infineon Technologies Description: IC GATE NOR
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IKCM30F60HAXKMA1 IKCM30F60HAXKMA1 Infineon Technologies IKCM30F60HA.pdf Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
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TLE4270 TLE4270 Infineon Technologies Infineon-TLE4270-2-DS-v01_80-EN.pdf?fileId=5546d46259d9a4bf0159f97a40b63e6a Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE4270-2S TLE4270-2S Infineon Technologies INFNS12041-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 650mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.5 mA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO220-5-11
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Reset
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
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TLE4270G TLE4270G Infineon Technologies Infineon-TLE4270-2-DS-v01_80-EN.pdf?fileId=5546d46259d9a4bf0159f97a40b63e6a Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 650mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.5 mA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
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TLE4270SNKSAL Infineon Technologies Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Produkt ist nicht verfügbar
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PTMA180152M V1 PTMA180152M V1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC AMP GSM 1.8GHZ-2GHZ DSO20-63
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.8GHz ~ 2GHz
RF Type: GSM, EDGE
Gain: 30dB
Supplier Device Package: PG-DSO-20-63
Produkt ist nicht verfügbar
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BAS7004E6433HTMA1 BAS7004E6433HTMA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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100+0.19 EUR
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TLE4274DV50ATMA2 TLE4274DV50ATMA2 Infineon Technologies Infineon-TLE4274-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f8e637f1f8f Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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TLE4274DV50ATMA2 TLE4274DV50ATMA2 Infineon Technologies Infineon-TLE4274-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f8e637f1f8f Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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CY7C4211V-15AXI CY7C4211V-15AXI Infineon Technologies CY7C42x1V_Rev2015.pdf Description: IC FIFO SYNC 512X9 10NS 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: -40°C ~ 85°C
Data Rate: 66.7MHz
Access Time: 10ns
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: No
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
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TLE9271QXV33XUMA1 TLE9271QXV33XUMA1 Infineon Technologies Infineon-TLE9271QX%20V33-DS-v01_03-EN.pdf?fileId=5546d46268554f4a0168854f82cf6859 Description: IC REG 4OUT VQFN-48-31
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CY14MB256J1-SXI CY14MB256J1-SXI Infineon Technologies ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 256KBIT I2C 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 3.4 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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TC366DP64F300SAAKXUMA1 TC366DP64F300SAAKXUMA1 Infineon Technologies 4_cip10527.pdf Description: IC MCU 32BIT 4MB FLASH 180LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 180-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-180-1
Part Status: Active
DigiKey Programmable: Not Verified
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TC366DP64F300SAALXUMA1 TC366DP64F300SAALXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 4MB FLASH 180LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 180-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-180-1
DigiKey Programmable: Not Verified
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BAT62-02WH6327 BAT62-02WH6327 Infineon Technologies Description: MIXER DIODE, LOW BARRIER
Packaging: Bulk
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT62-02LSE6327 BAT62-02LSE6327 Infineon Technologies INFNS15703-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 40V 100MW TSSLP-2
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT62-02WE6327 BAT62-02WE6327 Infineon Technologies Description: MIXER DIODE, LOW BARRIER
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOD323-2
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT62E6327 BAT62E6327 Infineon Technologies INFNS15703-1.pdf?t.download=true&u=5oefqw Description: MIXER DIODE, LOW BARRIER
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - Anti-Parallel
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SOT-143-4
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT62E6327HTSA1 BAT62E6327HTSA1 Infineon Technologies Infineon-BAT62-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1997a91e3eb2 Description: DIODE SCHOTTKY 40V 100MW SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT6202LE6327XTMA1 BAT6202LE6327XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW TSLP21
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSLP-2-1
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6207L4E6327XT BAT6207L4E6327XT Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW TSLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: TSLP-4-4
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6207L4E6433XTMA1 BAT6207L4E6433XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW TSLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: TSLP-4-4
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6207WE6327HTSA1 BAT6207WE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT 62-09S E6327 BAT 62-09S E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT363-PO
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT 62-02W E6327 BAT 62-02W E6327 Infineon Technologies bat62series.pdf Description: DIODE SCHOTTKY 40V 100MW SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT 62-02W E6327 BAT 62-02W E6327 Infineon Technologies bat62series.pdf Description: DIODE SCHOTTKY 40V 100MW SCD80
Packaging: Cut Tape (CT)
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6202LSE6327XTSA1 BAT6202LSE6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6202LSE6327XTSA1 BAT6202LSE6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW TSSLP-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6202WH6327XTSA1 BAT6202WH6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6202WH6327XTSA1 BAT6202WH6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SCD80
Packaging: Cut Tape (CT)
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6203WE6327HTSA1 BAT6203WE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6203WE6327HTSA1 BAT6203WE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6207WH6327XTSA1 BAT6207WH6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6207WH6327XTSA1 BAT6207WH6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SOT343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BTS740S2XUMA1 BTS740S2XUMA1 Infineon Technologies Infineon-BTS740S2-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa390ea280fe0 Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3940 Stücke:
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2+9.77 EUR
10+7.50 EUR
25+6.94 EUR
100+6.32 EUR
250+6.02 EUR
500+5.84 EUR
Mindestbestellmenge: 2
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BTS740S2NT BTS740S2NT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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BCX71KE6327HTSA1 BCX71KE6327HTSA1 Infineon Technologies bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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6885+0.06 EUR
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TLE4274GV852ATMA1 TLE4274GV852ATMA1 Infineon Technologies Infineon-TLE4274-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f8e637f1f8f Description: IC REG LIN 8.5V 400MA TO263-3-1
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 650 Stücke:
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322+1.44 EUR
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CY7C0852AV-133BBC CY7C0852AV-133BBC Infineon Technologies CY7C0850-853AV.pdf Description: IC SRAM 4.5MBIT PAR 172FBGA
Packaging: Tray
Package / Case: 172-LBGA
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 172-FBGA (15x15)
Memory Interface: Parallel
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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S29GL01GT11TFIV10 S29GL01GT11TFIV10 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 538 Stücke:
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1+18.92 EUR
10+17.55 EUR
25+17.00 EUR
91+16.28 EUR
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S29GL01GT11FHIV20 S29GL01GT11FHIV20 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 316 Stücke:
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1+24.43 EUR
10+22.67 EUR
25+21.96 EUR
40+21.59 EUR
180+20.45 EUR
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T2810N54P270HOSA1 Infineon Technologies Description: MOD DIODE THYRISTOR
Produkt ist nicht verfügbar
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IPB120N06S402ATMA2 IPB120N06S402ATMA2 Infineon Technologies Infineon-I120N06S4_02-DS-v01_02-en.pdf?fileId=db3a30431ff9881501203890b6410cb8 Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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1000+2.30 EUR
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IPB120N06S402ATMA2 IPB120N06S402ATMA2 Infineon Technologies Infineon-I120N06S4_02-DS-v01_02-en.pdf?fileId=db3a30431ff9881501203890b6410cb8 Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1206 Stücke:
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3+6.55 EUR
10+4.30 EUR
100+3.02 EUR
500+2.48 EUR
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EVALAHNBIM69D130V01TOBO1 EVALAHNBIM69D130V01TOBO1 Infineon Technologies Infineon-MEMS_AudioHub_Nano-UserManual-v01_00-EN.pdf?fileId=5546d4626f229553016f8ac8b54a18f1 Description: EVAL AUDIOHUB NANO
Packaging: Box
Function: Microphone
Type: Audio
Utilized IC / Part: IM69D130
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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IPD50N04S308ATMA1-INF Infineon Technologies Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Produkt ist nicht verfügbar
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PEF81913FV1.4 PEF81913FV1.4 Infineon Technologies Description: Q-SMINTIX SECOND GEN
Packaging: Bulk
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
18+27.09 EUR
Mindestbestellmenge: 18
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BSO130N03MSGXUMA1 BSO130N03MS_G.pdf
BSO130N03MSGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 9A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Produkt ist nicht verfügbar
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BFR340FH6327 INFNS14910-1.pdf?t.download=true&u=5oefqw
BFR340FH6327
Hersteller: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 28dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Supplier Device Package: PG-TSFP-3-1
Part Status: Active
auf Bestellung 90000 Stücke:
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Anzahl Preis
3418+0.14 EUR
Mindestbestellmenge: 3418
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BFR 340T E6327 BFR340T.pdf
BFR 340T E6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ PG-SC75-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 60mW
Current - Collector (Ic) (Max): 10mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
Supplier Device Package: PG-SC75-3D
Produkt ist nicht verfügbar
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STL81005Z stl81004-5x_020101.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: LOW POWER 1550 NM FP LASER
Power (Watts): 50mW
Packaging: Bulk
Package / Case: Module
Wavelength: 1550nm
Current Rating (Amps): 120mA
Voltage - Input: 1.5V
Part Status: Active
Produkt ist nicht verfügbar
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CY22381SXI-174 cy22381_8.pdf
CY22381SXI-174
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
auf Bestellung 11222 Stücke:
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Anzahl Preis
110+4.53 EUR
Mindestbestellmenge: 110
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CY22381SXI-211 cy22381_8.pdf
CY22381SXI-211
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
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Anzahl Preis
110+4.53 EUR
Mindestbestellmenge: 110
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CY22381SXI-146 cy22381_8.pdf
CY22381SXI-146
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
auf Bestellung 4453 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
110+4.53 EUR
Mindestbestellmenge: 110
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CY22381SXI-174T cy22381_8.pdf
CY22381SXI-174T
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: CMOS
Type: Clock Generator, Fanout Distribution
Input: LVTTL, Crystal
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:3
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 3
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
107+4.65 EUR
Mindestbestellmenge: 107
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BB 545 E7908 bb545series_bb565series.pdf
BB 545 E7908
Hersteller: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SOD-323
Produkt ist nicht verfügbar
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2ED2304S06FXUMA1 Infineon-2ED2304S06F-DataSheet-v02_09-EN.pdf?fileId=5546d46264a8de7e0164d5356ddb3158
2ED2304S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED2304S06FXUMA1 Infineon-2ED2304S06F-DataSheet-v02_09-EN.pdf?fileId=5546d46264a8de7e0164d5356ddb3158
2ED2304S06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2ED2304S06FXLLA1 Infineon-2ED2304S06F-DataSheet-v02_05-EN.pdf?fileId=5546d46264a8de7e0164d5356ddb3158
2ED2304S06FXLLA1
Hersteller: Infineon Technologies
Description: LEVEL SHIFT SOI
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 17.5V
Input Type: CMOS
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8-910
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 360mA, 700mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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A2C00042866 A
Hersteller: Infineon Technologies
Description: IC GATE NOR
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IKCM30F60HAXKMA1 IKCM30F60HA.pdf
IKCM30F60HAXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
auf Bestellung 1672 Stücke:
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Anzahl Preis
34+14.00 EUR
Mindestbestellmenge: 34
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TLE4270 Infineon-TLE4270-2-DS-v01_80-EN.pdf?fileId=5546d46259d9a4bf0159f97a40b63e6a
TLE4270
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE4270-2S INFNS12041-1.pdf?t.download=true&u=5oefqw
TLE4270-2S
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 650mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.5 mA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO220-5-11
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Reset
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
Produkt ist nicht verfügbar
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TLE4270G Infineon-TLE4270-2-DS-v01_80-EN.pdf?fileId=5546d46259d9a4bf0159f97a40b63e6a
TLE4270G
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 650mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1.5 mA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Current, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
Produkt ist nicht verfügbar
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TLE4270SNKSAL
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Produkt ist nicht verfügbar
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PTMA180152M V1 fundamentals-of-power-semiconductors
PTMA180152M V1
Hersteller: Infineon Technologies
Description: IC AMP GSM 1.8GHZ-2GHZ DSO20-63
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.8GHz ~ 2GHz
RF Type: GSM, EDGE
Gain: 30dB
Supplier Device Package: PG-DSO-20-63
Produkt ist nicht verfügbar
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BAS7004E6433HTMA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7004E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 4881 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
57+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 35
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TLE4274DV50ATMA2 Infineon-TLE4274-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f8e637f1f8f
TLE4274DV50ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.29 EUR
Mindestbestellmenge: 2500
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TLE4274DV50ATMA2 Infineon-TLE4274-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f8e637f1f8f
TLE4274DV50ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 3658 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
10+1.89 EUR
25+1.72 EUR
100+1.53 EUR
250+1.43 EUR
500+1.38 EUR
1000+1.33 EUR
Mindestbestellmenge: 7
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CY7C4211V-15AXI CY7C42x1V_Rev2015.pdf
CY7C4211V-15AXI
Hersteller: Infineon Technologies
Description: IC FIFO SYNC 512X9 10NS 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: -40°C ~ 85°C
Data Rate: 66.7MHz
Access Time: 10ns
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: No
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+23.79 EUR
Mindestbestellmenge: 22
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TLE9271QXV33XUMA1 Infineon-TLE9271QX%20V33-DS-v01_03-EN.pdf?fileId=5546d46268554f4a0168854f82cf6859
TLE9271QXV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG 4OUT VQFN-48-31
Produkt ist nicht verfügbar
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CY14MB256J1-SXI ?utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14MB256J1-SXI
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT I2C 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Clock Frequency: 3.4 MHz
Memory Format: NVSRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: I2C
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 4015 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
55+8.91 EUR
Mindestbestellmenge: 55
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TC366DP64F300SAAKXUMA1 4_cip10527.pdf
TC366DP64F300SAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 180LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 180-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-180-1
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC366DP64F300SAALXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC366DP64F300SAALXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 180LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 180-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-180-1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAT62-02WH6327
BAT62-02WH6327
Hersteller: Infineon Technologies
Description: MIXER DIODE, LOW BARRIER
Packaging: Bulk
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT62-02LSE6327 INFNS15703-1.pdf?t.download=true&u=5oefqw
BAT62-02LSE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW TSSLP-2
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
auf Bestellung 21676 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2840+0.17 EUR
Mindestbestellmenge: 2840
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BAT62-02WE6327
BAT62-02WE6327
Hersteller: Infineon Technologies
Description: MIXER DIODE, LOW BARRIER
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOD323-2
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT62E6327 INFNS15703-1.pdf?t.download=true&u=5oefqw
BAT62E6327
Hersteller: Infineon Technologies
Description: MIXER DIODE, LOW BARRIER
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - Anti-Parallel
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SOT-143-4
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT62E6327HTSA1 Infineon-BAT62-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1997a91e3eb2
BAT62E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
auf Bestellung 19948 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
73+0.24 EUR
100+0.20 EUR
Mindestbestellmenge: 39
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BAT6202LE6327XTMA1 fundamentals-of-power-semiconductors
BAT6202LE6327XTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW TSLP21
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSLP-2-1
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6207L4E6327XT fundamentals-of-power-semiconductors
BAT6207L4E6327XT
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW TSLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: TSLP-4-4
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6207L4E6433XTMA1 fundamentals-of-power-semiconductors
BAT6207L4E6433XTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW TSLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: TSLP-4-4
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6207WE6327HTSA1 fundamentals-of-power-semiconductors
BAT6207WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT 62-09S E6327 fundamentals-of-power-semiconductors
BAT 62-09S E6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT363-PO
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT 62-02W E6327 bat62series.pdf
BAT 62-02W E6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT 62-02W E6327 bat62series.pdf
BAT 62-02W E6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SCD80
Packaging: Cut Tape (CT)
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6202LSE6327XTSA1 fundamentals-of-power-semiconductors
BAT6202LSE6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6202LSE6327XTSA1 fundamentals-of-power-semiconductors
BAT6202LSE6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW TSSLP-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6202WH6327XTSA1 fundamentals-of-power-semiconductors
BAT6202WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6202WH6327XTSA1 fundamentals-of-power-semiconductors
BAT6202WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SCD80
Packaging: Cut Tape (CT)
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6203WE6327HTSA1 fundamentals-of-power-semiconductors
BAT6203WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6203WE6327HTSA1 fundamentals-of-power-semiconductors
BAT6203WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6207WH6327XTSA1 fundamentals-of-power-semiconductors
BAT6207WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT6207WH6327XTSA1 fundamentals-of-power-semiconductors
BAT6207WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOT343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BTS740S2XUMA1 Infineon-BTS740S2-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa390ea280fe0
BTS740S2XUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.77 EUR
10+7.50 EUR
25+6.94 EUR
100+6.32 EUR
250+6.02 EUR
500+5.84 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
BTS740S2NT
BTS740S2NT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCX71KE6327HTSA1 bcw61_bcx71.pdf?folderId=db3a304314dca389011541d30fa21656&fileId=db3a304314dca3890115422f2cbc173b
BCX71KE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 380 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 82000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6885+0.06 EUR
Mindestbestellmenge: 6885
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TLE4274GV852ATMA1 Infineon-TLE4274-DS-v01_70-EN.pdf?fileId=5546d46258fc0bc101595f8e637f1f8f
TLE4274GV852ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 8.5V 400MA TO263-3-1
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
322+1.44 EUR
Mindestbestellmenge: 322
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CY7C0852AV-133BBC CY7C0850-853AV.pdf
CY7C0852AV-133BBC
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 172FBGA
Packaging: Tray
Package / Case: 172-LBGA
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 172-FBGA (15x15)
Memory Interface: Parallel
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
auf Bestellung 1101 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+262.86 EUR
Mindestbestellmenge: 2
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S29GL01GT11TFIV10 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT11TFIV10
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+18.92 EUR
10+17.55 EUR
25+17.00 EUR
91+16.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
S29GL01GT11FHIV20 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL01GT11FHIV20
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 316 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+24.43 EUR
10+22.67 EUR
25+21.96 EUR
40+21.59 EUR
180+20.45 EUR
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T2810N54P270HOSA1
Hersteller: Infineon Technologies
Description: MOD DIODE THYRISTOR
Produkt ist nicht verfügbar
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IPB120N06S402ATMA2 Infineon-I120N06S4_02-DS-v01_02-en.pdf?fileId=db3a30431ff9881501203890b6410cb8
IPB120N06S402ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.30 EUR
Mindestbestellmenge: 1000
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IPB120N06S402ATMA2 Infineon-I120N06S4_02-DS-v01_02-en.pdf?fileId=db3a30431ff9881501203890b6410cb8
IPB120N06S402ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1206 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.55 EUR
10+4.30 EUR
100+3.02 EUR
500+2.48 EUR
Mindestbestellmenge: 3
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EVALAHNBIM69D130V01TOBO1 Infineon-MEMS_AudioHub_Nano-UserManual-v01_00-EN.pdf?fileId=5546d4626f229553016f8ac8b54a18f1
EVALAHNBIM69D130V01TOBO1
Hersteller: Infineon Technologies
Description: EVAL AUDIOHUB NANO
Packaging: Box
Function: Microphone
Type: Audio
Utilized IC / Part: IM69D130
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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IPD50N04S308ATMA1-INF
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Produkt ist nicht verfügbar
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PEF81913FV1.4
PEF81913FV1.4
Hersteller: Infineon Technologies
Description: Q-SMINTIX SECOND GEN
Packaging: Bulk
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+27.09 EUR
Mindestbestellmenge: 18
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