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SAB-C161OL25MHABXUMA1 SAB-C161OL25MHABXUMA1 Infineon Technologies INFNS01615-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16 BIT MICROCONTROLLER
Number of I/O: 63
Part Status: Active
Supplier Device Package: P-MQFP-80-1
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
DigiKey Programmable: Not Verified
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SABC161CSLFCA SABC161CSLFCA Infineon Technologies Description: LEGACY 16-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C1610-LMHA SAB-C1610-LMHA Infineon Technologies INFNS11060-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
DigiKey Programmable: Not Verified
Number of I/O: 63
Supplier Device Package: P-MQFP-80-1
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
Produkt ist nicht verfügbar
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SAB-C161PI-LFAA SAB-C161PI-LFAA Infineon Technologies INFNS01619-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Number of I/O: 76
Part Status: Active
Supplier Device Package: PG-TQFP-100-1
DigiKey Programmable: Not Verified
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 4x10b SAR
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 3K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bulk
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SAB-C161O-LM3V-HA SAB-C161O-LM3V-HA Infineon Technologies INFNS11060-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
Number of I/O: 63
Part Status: Active
Supplier Device Package: P-MQFP-80-1
DigiKey Programmable: Not Verified
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SABC161PILFCA SABC161PILFCA Infineon Technologies INFNS00746-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Number of I/O: 76
Part Status: Active
Supplier Device Package: PG-TQFP-100-1
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, I²C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Data Converters: A/D 4x10b
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 3K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
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SABC161PILF3VCA Infineon Technologies Description: LEGACY 16-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C161PI-LF3VCA Infineon Technologies Description: LEGACY 16-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SABC161OLM3VHA SABC161OLM3VHA Infineon Technologies INFNS11060-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
DigiKey Programmable: Not Verified
Number of I/O: 63
Supplier Device Package: P-MQFP-80-1
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
Produkt ist nicht verfügbar
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IKW30N65ET7XKSA1 IKW30N65ET7XKSA1 Infineon Technologies Infineon-IKW30N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351beb15f57f2 Description: IGBT TRENCH FS 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/245ns
Switching Energy: 590µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
Grade: Automotive
Qualification: AEC-Q101
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SPD50P03L SPD50P03L Infineon Technologies SPD50P03L.pdf Description: MOSFET PCH -30V -50A TO252-5-3
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SPD50N03S207GBTMA1 SPD50N03S207GBTMA1 Infineon Technologies SPD50N03S2-07G.pdf Description: MOSFET N-CH 30V 50A TO252-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 85µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Produkt ist nicht verfügbar
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CY14B256L-SP35XC CY14B256L-SP35XC Infineon Technologies CY14B256L_RevI.pdf Description: IC NVSRAM 256KBIT PAR 48SSOP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Supplier Device Package: 48-SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
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KITACTBRD60R022S7TOBO1 KITACTBRD60R022S7TOBO1 Infineon Technologies infineon-ipt60r022s7-datasheet-cn.pdf Description: ACTIVE BRIDGE BOARD KIT_ACT_BRD_
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Type: Power Management
Packaging: Box
Produkt ist nicht verfügbar
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CY2DP1504ZXCT CY2DP1504ZXCT Infineon Technologies Infineon-CY2DP1504ZXI-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec668e23c9c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK BUFFER 2:4 1.5GHZ 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer
Input: LVPECL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 2:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 20-TSSOP
Frequency - Max: 1.5 GHz
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XMC1301T038F0008AAXUMA1 XMC1301T038F0008AAXUMA1 Infineon Technologies XMC1300.pdf Description: IC MCU 32BIT 8KB FLASH 38TSSOP
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Obsolete
Number of I/O: 26
DigiKey Programmable: Not Verified
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XMC1202T016X0032AAXUMA1 XMC1202T016X0032AAXUMA1 Infineon Technologies XMC1200.pdf Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Obsolete
Number of I/O: 11
DigiKey Programmable: Not Verified
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XMC1202T028X0032ABXUMA1 XMC1202T028X0032ABXUMA1 Infineon Technologies Infineon-xmc1200_AB-DataSheet-v01_09-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0 Description: IC MCU 32BIT 32KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
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XMC1202T028X0032ABXUMA1 XMC1202T028X0032ABXUMA1 Infineon Technologies Infineon-xmc1200_AB-DataSheet-v01_09-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0 Description: IC MCU 32BIT 32KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
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XMC1100-T016X0064AAXUMA1 XMC1100-T016X0064AAXUMA1 Infineon Technologies Infineon-xmc1100_AB-DS-v01_07-EN.pdf?fileId=5546d4624a0bf290014a4bdaff9325bd Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
DigiKey Programmable: Not Verified
Number of I/O: 11
Part Status: Active
Supplier Device Package: PG-TSSOP-16-8
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Connectivity: I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 6x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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XMC1402Q040X0128AAXUMA1 XMC1402Q040X0128AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 128KB FLASH 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-17
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
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XMC13S2T038X0032ABXUMA1 XMC13S2T038X0032ABXUMA1 Infineon Technologies Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
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XMC13S2T038X0200ABXUMA1 XMC13S2T038X0200ABXUMA1 Infineon Technologies Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
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XMC1302T038X0200A XMC1302T038X0200A Infineon Technologies Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1202Q040X0032ABXUMA1 XMC1202Q040X0032ABXUMA1 Infineon Technologies XMC1200.pdf Description: IC MCU 32BIT 32KB FLASH 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
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10+3.46 EUR
25+3.17 EUR
100+2.83 EUR
250+2.68 EUR
500+2.58 EUR
1000+2.51 EUR
2500+2.43 EUR
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IPB65R099CFD7AATMA1 IPB65R099CFD7AATMA1 Infineon Technologies Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805 Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB65R099CFD7AATMA1 IPB65R099CFD7AATMA1 Infineon Technologies Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805 Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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10+8.6 EUR
100+6.22 EUR
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IPW65R099CFD7AXKSA1 IPW65R099CFD7AXKSA1 Infineon Technologies Infineon-IPW65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f920171c028ca1d0912 Description: MOSFET N-CH 650V 24A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
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IPL65R099C7AUMA1 IPL65R099C7AUMA1 Infineon Technologies INFN-S-A0003614916-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
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10+8.63 EUR
100+6.25 EUR
500+5.88 EUR
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IPB65R099C6ATMA1 IPB65R099C6ATMA1 Infineon Technologies IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019 Description: MOSFET N-CH 650V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
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IPI65R099C6 IPI65R099C6 Infineon Technologies INFNS17322-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
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IPBE65R099CFD7AATMA1 IPBE65R099CFD7AATMA1 Infineon Technologies Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
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IPBE65R099CFD7AATMA1 IPBE65R099CFD7AATMA1 Infineon Technologies Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
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IPI65R099C6XKSA1 IPI65R099C6XKSA1 Infineon Technologies IPx65R099C6.pdf Description: MOSFET N-CH 650V 38A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
Produkt ist nicht verfügbar
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BSO615NGXUMA1 BSO615NGXUMA1 Infineon Technologies Infineon-BSO615N-DS-v01_02-en.pdf?fileId=db3a304412b407950112b42ee69b4aac Description: MOSFET 2N-CH 60V 2.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-DSO-8
Grade: Automotive
Part Status: Last Time Buy
Qualification: AEC-Q101
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BSO615NGXUMA1 BSO615NGXUMA1 Infineon Technologies Infineon-BSO615N-DS-v01_02-en.pdf?fileId=db3a304412b407950112b42ee69b4aac Description: MOSFET 2N-CH 60V 2.6A 8DSO
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 20µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Last Time Buy
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500+1.11 EUR
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BSM50GP120BOSA1 BSM50GP120BOSA1 Infineon Technologies BSM50GP120_6-17-2003.pdf Description: IGBT MODULE 1200V 80A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: 3 Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.3 pF @ 25 V
Produkt ist nicht verfügbar
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TLE6251GNT TLE6251GNT Infineon Technologies Infineon-TLE6251-2G-DS-v01_22-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8 Description: IC TRANSCEIVER FULL 1/1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-14-13
Receiver Hysteresis: 400 mV
Duplex: Full
Part Status: Active
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SAKTC1797384F150EFACKXUMA1 Infineon Technologies INFNS30466-1.pdf?t.download=true&u=5oefqw Description: 32-BIT RISC FLASH MCU
DigiKey Programmable: Not Verified
Number of I/O: 221
Part Status: Active
Supplier Device Package: PG-BGA-416-27
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Core Size: 32-Bit
Data Converters: A/D 48x10b SAR
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 176K x 8
Program Memory Size: 3MB (3M x 8)
Speed: 150MHz
Mounting Type: Surface Mount
Package / Case: 416-BGA
Packaging: Bulk
Produkt ist nicht verfügbar
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SPB10N10LG Infineon Technologies Description: N-CHANNEL POWER MOSFET
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 21µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 154mOhm @ 8.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 444 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
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BSC0901NSIATMA1 BSC0901NSIATMA1 Infineon Technologies BSC0901NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2aa7bdc30067 Description: MOSFET N-CH 30V 28A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC0901NSIATMA1 BSC0901NSIATMA1 Infineon Technologies BSC0901NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2aa7bdc30067 Description: MOSFET N-CH 30V 28A/100A TDSON
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
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KP275E1505XTMA1 Infineon Technologies Infineon-KP275-DS-v01_00-EN.pdf?fileId=5546d4625b10283a015b1a430d485f4f Description: INTEGRATED PRESSURE SENS
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KP276C1505XTMA1 Infineon Technologies Infineon-KP276C1505-DataSheet-v01_01-EN.pdf?fileId=5546d4626afcd350016b0408b0ec7182 Description: INTEGRATED PRESSURE SENS
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BAT17-04WH6327 BAT17-04WH6327 Infineon Technologies INFNS15700-1.pdf?t.download=true&u=5oefqw Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Voltage - Peak Reverse (Max): 4V
Resistance @ If, F: 15Ohm @ 5mA, 1MHz
Capacitance @ Vr, F: 0.7pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 1 Pair Series Connection
Package / Case: SC-70, SOT-323
Packaging: Bulk
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IPB407N30NATMA1 IPB407N30NATMA1 Infineon Technologies Infineon-IPB407N30N-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d760faf575474 Description: MOSFET N-CH 300V 44A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
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IPB407N30NATMA1 IPB407N30NATMA1 Infineon Technologies Infineon-IPB407N30N-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d760faf575474 Description: MOSFET N-CH 300V 44A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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100+9.44 EUR
500+8.68 EUR
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KIT_AURIX_TC275_LITE KIT_AURIX_TC275_LITE Infineon Technologies Description: AURIX TC275 LITE KIT
auf Bestellung 233 Stücke:
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BGA925L6E6327XTSA1 BGA925L6E6327XTSA1 Infineon Technologies BGA925L6.pdf Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.8dB
Current - Supply: 4.8mA
Noise Figure: 0.65dB
P1dB: -8dBm
Supplier Device Package: TSLP-6-2
Part Status: Obsolete
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ICE3A2565FKLA1 ICE3A2565FKLA1 Infineon Technologies CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Not For New Designs
Power (Watts): 68 W
Produkt ist nicht verfügbar
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BCR562E6327 BCR562E6327 Infineon Technologies INFNS10743-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
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BFP196WH6327 Infineon Technologies Description: RF TRANSISTOR, L BAND, NPN
Part Status: Active
Supplier Device Package: PG-SOT343-4
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 7.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 150mA
Power - Max: 700mW
Gain: 12.5dB ~ 19dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Produkt ist nicht verfügbar
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BFP196WE6327 BFP196WE6327 Infineon Technologies SIEMD096-1245.pdf?t.download=true&u=5oefqw Description: RF TRANS NPN 12V 7.5GHZ SOT343-4
Part Status: Active
Supplier Device Package: PG-SOT343-4
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 7.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 150mA
Power - Max: 700mW
Gain: 12.5dB ~ 19dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
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BFP196WH6740 BFP196WH6740 Infineon Technologies Infineon-BFP196W-DS-v01_01-en.pdf?fileId=db3a30431400ef680114267ecec60628 Description: RF TRANS NPN 12V 7.5GHZ SOT343-4
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SOT343-4-1
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 7.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 150mA
Power - Max: 700mW
Gain: 19dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Qualification: AEC-Q101
Grade: Automotive
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BSC884N03MSG BSC884N03MSG Infineon Technologies INFNS16417-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
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BSF024N03LT3G Infineon Technologies INFNS27838-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 106A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Bulk
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IPP034N03LG IPP034N03LG Infineon Technologies INFNS16315-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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IPLK60R360PFD7ATMA1 IPLK60R360PFD7ATMA1 Infineon Technologies Infineon-IPLK60R360PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd7912ace3d95 Description: MOSFET N-CH 600V 13A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Produkt ist nicht verfügbar
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IPLK60R360PFD7ATMA1 IPLK60R360PFD7ATMA1 Infineon Technologies Infineon-IPLK60R360PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd7912ace3d95 Description: MOSFET N-CH 600V 13A THIN-PAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Produkt ist nicht verfügbar
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BSC886N03LSG BSC886N03LSG Infineon Technologies INFNS15759-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
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SAB-C161OL25MHABXUMA1 INFNS01615-1.pdf?t.download=true&u=5oefqw
SAB-C161OL25MHABXUMA1
Hersteller: Infineon Technologies
Description: LEGACY 16 BIT MICROCONTROLLER
Number of I/O: 63
Part Status: Active
Supplier Device Package: P-MQFP-80-1
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
DigiKey Programmable: Not Verified
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SABC161CSLFCA
SABC161CSLFCA
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C1610-LMHA INFNS11060-1.pdf?t.download=true&u=5oefqw
SAB-C1610-LMHA
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
DigiKey Programmable: Not Verified
Number of I/O: 63
Supplier Device Package: P-MQFP-80-1
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
Produkt ist nicht verfügbar
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SAB-C161PI-LFAA INFNS01619-1.pdf?t.download=true&u=5oefqw
SAB-C161PI-LFAA
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Number of I/O: 76
Part Status: Active
Supplier Device Package: PG-TQFP-100-1
DigiKey Programmable: Not Verified
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 4x10b SAR
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 3K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bulk
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SAB-C161O-LM3V-HA INFNS11060-1.pdf?t.download=true&u=5oefqw
SAB-C161O-LM3V-HA
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
Number of I/O: 63
Part Status: Active
Supplier Device Package: P-MQFP-80-1
DigiKey Programmable: Not Verified
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34+17.34 EUR
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SABC161PILFCA INFNS00746-1.pdf?t.download=true&u=5oefqw
SABC161PILFCA
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Number of I/O: 76
Part Status: Active
Supplier Device Package: PG-TQFP-100-1
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, I²C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Data Converters: A/D 4x10b
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 3K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SABC161PILF3VCA
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAB-C161PI-LF3VCA
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SABC161OLM3VHA INFNS11060-1.pdf?t.download=true&u=5oefqw
SABC161OLM3VHA
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
DigiKey Programmable: Not Verified
Number of I/O: 63
Supplier Device Package: P-MQFP-80-1
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
Produkt ist nicht verfügbar
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IKW30N65ET7XKSA1 Infineon-IKW30N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351beb15f57f2
IKW30N65ET7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/245ns
Switching Energy: 590µJ (on), 500µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 180 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 188 W
Grade: Automotive
Qualification: AEC-Q101
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3+8.57 EUR
30+4.75 EUR
120+3.9 EUR
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SPD50P03L SPD50P03L.pdf
SPD50P03L
Hersteller: Infineon Technologies
Description: MOSFET PCH -30V -50A TO252-5-3
Produkt ist nicht verfügbar
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SPD50N03S207GBTMA1 SPD50N03S2-07G.pdf
SPD50N03S207GBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 46.5 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 4V @ 85µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Produkt ist nicht verfügbar
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CY14B256L-SP35XC CY14B256L_RevI.pdf
CY14B256L-SP35XC
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 48SSOP
DigiKey Programmable: Not Verified
Memory Organization: 32K x 8
Access Time: 35 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 35ns
Supplier Device Package: 48-SSOP
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Non-Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
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KITACTBRD60R022S7TOBO1 infineon-ipt60r022s7-datasheet-cn.pdf
KITACTBRD60R022S7TOBO1
Hersteller: Infineon Technologies
Description: ACTIVE BRIDGE BOARD KIT_ACT_BRD_
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Type: Power Management
Packaging: Box
Produkt ist nicht verfügbar
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CY2DP1504ZXCT Infineon-CY2DP1504ZXI-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec668e23c9c&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2DP1504ZXCT
Hersteller: Infineon Technologies
Description: IC CLK BUFFER 2:4 1.5GHZ 20TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVPECL
Type: Fanout Buffer (Distribution), Multiplexer
Input: LVPECL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 2:4
Differential - Input:Output: Yes/Yes
Supplier Device Package: 20-TSSOP
Frequency - Max: 1.5 GHz
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2000+2.71 EUR
4000+2.65 EUR
6000+2.63 EUR
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XMC1301T038F0008AAXUMA1 XMC1300.pdf
XMC1301T038F0008AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 38TSSOP
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Obsolete
Number of I/O: 26
DigiKey Programmable: Not Verified
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XMC1202T016X0032AAXUMA1 XMC1200.pdf
XMC1202T016X0032AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 11x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-8
Part Status: Obsolete
Number of I/O: 11
DigiKey Programmable: Not Verified
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222+2.43 EUR
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XMC1202T028X0032ABXUMA1 Infineon-xmc1200_AB-DataSheet-v01_09-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0
XMC1202T028X0032ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 28TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
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3000+2.57 EUR
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XMC1202T028X0032ABXUMA1 Infineon-xmc1200_AB-DataSheet-v01_09-EN.pdf?fileId=5546d4624a0bf290014a4bdaf60925b0
XMC1202T028X0032ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 28TSSOP
Packaging: Cut Tape (CT)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 14x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-16
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
auf Bestellung 6077 Stücke:
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AnzahlPrivatkunde
5+4.71 EUR
10+3.49 EUR
50+3 EUR
100+2.86 EUR
500+2.59 EUR
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XMC1100-T016X0064AAXUMA1 Infineon-xmc1100_AB-DS-v01_07-EN.pdf?fileId=5546d4624a0bf290014a4bdaff9325bd
XMC1100-T016X0064AAXUMA1
Hersteller: Infineon Technologies
Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
DigiKey Programmable: Not Verified
Number of I/O: 11
Part Status: Active
Supplier Device Package: PG-TSSOP-16-8
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Connectivity: I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 6x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 32MHz
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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XMC1402Q040X0128AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402Q040X0128AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-17
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
auf Bestellung 13889 Stücke:
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AnzahlPrivatkunde
4+5.9 EUR
10+4.41 EUR
25+4.05 EUR
100+3.64 EUR
250+3.44 EUR
500+3.33 EUR
1000+3.22 EUR
2500+3.13 EUR
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XMC13S2T038X0032ABXUMA1
XMC13S2T038X0032ABXUMA1
Hersteller: Infineon Technologies
Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
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XMC13S2T038X0200ABXUMA1
XMC13S2T038X0200ABXUMA1
Hersteller: Infineon Technologies
Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
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XMC1302T038X0200A Infineon-xmc1300_AB-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302T038X0200A
Hersteller: Infineon Technologies
Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 200KB (200K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XMC1202Q040X0032ABXUMA1 XMC1200.pdf
XMC1202Q040X0032ABXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40VQFN
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
auf Bestellung 4990 Stücke:
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AnzahlPrivatkunde
5+4.65 EUR
10+3.46 EUR
25+3.17 EUR
100+2.83 EUR
250+2.68 EUR
500+2.58 EUR
1000+2.51 EUR
2500+2.43 EUR
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IPB65R099CFD7AATMA1 Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805
IPB65R099CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB65R099CFD7AATMA1 Infineon-IPB65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701714e8a372b6805
IPB65R099CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 387 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.79 EUR
10+8.6 EUR
100+6.22 EUR
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IPW65R099CFD7AXKSA1 Infineon-IPW65R099CFD7A-DataSheet-v02_00-EN.pdf?fileId=5546d46271bf4f920171c028ca1d0912
IPW65R099CFD7AXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO247-3-41
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.45 EUR
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IPL65R099C7AUMA1 INFN-S-A0003614916-1.pdf?t.download=true&u=5oefqw
IPL65R099C7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 21A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 5.9A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2140 pF @ 400 V
auf Bestellung 1590 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.82 EUR
10+8.63 EUR
100+6.25 EUR
500+5.88 EUR
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IPB65R099C6ATMA1 IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019
IPB65R099C6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO263-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
Produkt ist nicht verfügbar
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IPI65R099C6 INFNS17322-1.pdf?t.download=true&u=5oefqw
IPI65R099C6
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
Produkt ist nicht verfügbar
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IPBE65R099CFD7AATMA1 Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d
IPBE65R099CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+4.94 EUR
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IPBE65R099CFD7AATMA1 Infineon-IPBE65R099CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f32a8d847c8d
IPBE65R099CFD7AATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 24A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.5A, 10V
Power Dissipation (Max): 127W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 630µA
Supplier Device Package: PG-TO263-7-3-10
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 1388 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.88 EUR
10+8.66 EUR
100+6.28 EUR
500+5.91 EUR
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IPI65R099C6XKSA1 IPx65R099C6.pdf
IPI65R099C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 38A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
Produkt ist nicht verfügbar
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BSO615NGXUMA1 Infineon-BSO615N-DS-v01_02-en.pdf?fileId=db3a304412b407950112b42ee69b4aac
BSO615NGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 2.6A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-DSO-8
Grade: Automotive
Part Status: Last Time Buy
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSO615NGXUMA1 Infineon-BSO615N-DS-v01_02-en.pdf?fileId=db3a304412b407950112b42ee69b4aac
BSO615NGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 60V 2.6A 8DSO
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-DSO-8
Vgs(th) (Max) @ Id: 2V @ 20µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 60V
Power - Max: 2W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Last Time Buy
auf Bestellung 2155 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.31 EUR
11+2.09 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.01 EUR
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BSM50GP120BOSA1 BSM50GP120_6-17-2003.pdf
BSM50GP120BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 80A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: 3 Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 3.3 pF @ 25 V
Produkt ist nicht verfügbar
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TLE6251GNT Infineon-TLE6251-2G-DS-v01_22-EN.pdf?fileId=5546d4625996c0c30159a766fb9977b8
TLE6251GNT
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1MBd
Protocol: CANbus
Supplier Device Package: PG-DSO-14-13
Receiver Hysteresis: 400 mV
Duplex: Full
Part Status: Active
auf Bestellung 451 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
235+2.28 EUR
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SAKTC1797384F150EFACKXUMA1 INFNS30466-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
DigiKey Programmable: Not Verified
Number of I/O: 221
Part Status: Active
Supplier Device Package: PG-BGA-416-27
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Core Size: 32-Bit
Data Converters: A/D 48x10b SAR
Core Processor: TriCore™
EEPROM Size: 64K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 176K x 8
Program Memory Size: 3MB (3M x 8)
Speed: 150MHz
Mounting Type: Surface Mount
Package / Case: 416-BGA
Packaging: Bulk
Produkt ist nicht verfügbar
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SPB10N10LG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 21µA
Power Dissipation (Max): 50W (Tc)
Rds On (Max) @ Id, Vgs: 154mOhm @ 8.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 444 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
auf Bestellung 993 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
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BSC0901NSIATMA1 BSC0901NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2aa7bdc30067
BSC0901NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSC0901NSIATMA1 BSC0901NSI_Rev_2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f29829e012f2aa7bdc30067
BSC0901NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 28A/100A TDSON
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 15 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
auf Bestellung 374 Stücke:
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7+3.44 EUR
10+2.18 EUR
100+1.46 EUR
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KP275E1505XTMA1 Infineon-KP275-DS-v01_00-EN.pdf?fileId=5546d4625b10283a015b1a430d485f4f
Hersteller: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Produkt ist nicht verfügbar
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KP276C1505XTMA1 Infineon-KP276C1505-DataSheet-v01_01-EN.pdf?fileId=5546d4626afcd350016b0408b0ec7182
Hersteller: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Produkt ist nicht verfügbar
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BAT17-04WH6327 INFNS15700-1.pdf?t.download=true&u=5oefqw
BAT17-04WH6327
Hersteller: Infineon Technologies
Description: RF MIXER/DETECTOR SCHOTTKY DIODE
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Voltage - Peak Reverse (Max): 4V
Resistance @ If, F: 15Ohm @ 5mA, 1MHz
Capacitance @ Vr, F: 0.7pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - 1 Pair Series Connection
Package / Case: SC-70, SOT-323
Packaging: Bulk
auf Bestellung 33900 Stücke:
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3435+0.17 EUR
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IPB407N30NATMA1 Infineon-IPB407N30N-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d760faf575474
IPB407N30NATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 300V 44A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Produkt ist nicht verfügbar
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IPB407N30NATMA1 Infineon-IPB407N30N-DS-v02_00-EN.pdf?fileId=5546d4624d6fc3d5014d760faf575474
IPB407N30NATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 300V 44A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 270µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 40.7mOhm @ 44A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 841 Stücke:
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AnzahlPrivatkunde
2+18.54 EUR
10+12.72 EUR
100+9.44 EUR
500+8.68 EUR
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KIT_AURIX_TC275_LITE
KIT_AURIX_TC275_LITE
Hersteller: Infineon Technologies
Description: AURIX TC275 LITE KIT
auf Bestellung 233 Stücke:
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1+89.58 EUR
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BGA925L6E6327XTSA1 BGA925L6.pdf
BGA925L6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-2
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS/GNSS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.8dB
Current - Supply: 4.8mA
Noise Figure: 0.65dB
P1dB: -8dBm
Supplier Device Package: TSLP-6-2
Part Status: Obsolete
Produkt ist nicht verfügbar
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ICE3A2565FKLA1 CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30
ICE3A2565FKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Not For New Designs
Power (Watts): 68 W
Produkt ist nicht verfügbar
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BCR562E6327 INFNS10743-1.pdf?t.download=true&u=5oefqw
BCR562E6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Produkt ist nicht verfügbar
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BFP196WH6327
Hersteller: Infineon Technologies
Description: RF TRANSISTOR, L BAND, NPN
Part Status: Active
Supplier Device Package: PG-SOT343-4
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 7.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 150mA
Power - Max: 700mW
Gain: 12.5dB ~ 19dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Produkt ist nicht verfügbar
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BFP196WE6327 SIEMD096-1245.pdf?t.download=true&u=5oefqw
BFP196WE6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 7.5GHZ SOT343-4
Part Status: Active
Supplier Device Package: PG-SOT343-4
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 7.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 150mA
Power - Max: 700mW
Gain: 12.5dB ~ 19dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
auf Bestellung 2200 Stücke:
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AnzahlPrivatkunde
1416+0.38 EUR
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BFP196WH6740 Infineon-BFP196W-DS-v01_01-en.pdf?fileId=db3a30431400ef680114267ecec60628
BFP196WH6740
Hersteller: Infineon Technologies
Description: RF TRANS NPN 12V 7.5GHZ SOT343-4
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SOT343-4-1
Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Frequency - Transition: 7.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 150mA
Power - Max: 700mW
Gain: 19dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 99000 Stücke:
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1011+0.55 EUR
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BSC884N03MSG INFNS16417-1.pdf?t.download=true&u=5oefqw
BSC884N03MSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 34 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
auf Bestellung 14149 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
866+0.74 EUR
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BSF024N03LT3G INFNS27838-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: MG-WDSON-2
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 106A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DirectFET™ Isometric MX
Packaging: Bulk
auf Bestellung 9963 Stücke:
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AnzahlPrivatkunde
547+1.06 EUR
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IPP034N03LG INFNS16315-1.pdf?t.download=true&u=5oefqw
IPP034N03LG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
auf Bestellung 1250 Stücke:
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AnzahlPrivatkunde
437+1.36 EUR
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IPLK60R360PFD7ATMA1 Infineon-IPLK60R360PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd7912ace3d95
IPLK60R360PFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A THIN-PAK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Produkt ist nicht verfügbar
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IPLK60R360PFD7ATMA1 Infineon-IPLK60R360PFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016fd7912ace3d95
IPLK60R360PFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A THIN-PAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.9A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 140µA
Supplier Device Package: PG-TDSON-8-52
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 534 pF @ 400 V
Produkt ist nicht verfügbar
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BSC886N03LSG INFNS15759-1.pdf?t.download=true&u=5oefqw
BSC886N03LSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
auf Bestellung 4609 Stücke:
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AnzahlPrivatkunde
1205+0.5 EUR
Mindestbestellmenge: 1205 Stücke
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