Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (148914) > Seite 364 nach 2482

Wählen Sie Seite:   [  << Vorherige Seite ]  1 248 359 360 361 362 363 364 365 366 367 368 369 496 744 992 1240 1488 1736 1984 2232 2480 2482  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IRS2301STRPBF IRS2301STRPBF Infineon Technologies IRSDS10790-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5865 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.65 EUR
15+1.19 EUR
25+1.08 EUR
100+0.95 EUR
250+0.89 EUR
500+0.85 EUR
1000+0.82 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPD14N06S280ATMA2 IPD14N06S280ATMA2 Infineon Technologies INFNS09524-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3479 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
31+0.58 EUR
100+0.53 EUR
500+0.52 EUR
1000+0.50 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
BSC094N06LS5ATMA1 BSC094N06LS5ATMA1 Infineon Technologies Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3 Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.67 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSC094N06LS5ATMA1 BSC094N06LS5ATMA1 Infineon Technologies Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3 Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 6864 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.38 EUR
12+1.53 EUR
100+1.10 EUR
500+0.84 EUR
1000+0.71 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPB034N06N3G IPB034N06N3G Infineon Technologies INFNS16279-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 3146 Stücke:
Lieferzeit 10-14 Tag (e)
258+1.88 EUR
Mindestbestellmenge: 258
Im Einkaufswagen  Stück im Wert von  UAH
IPP084N06L3GXK IPP084N06L3GXK Infineon Technologies INFNS19509-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4307D V33 TLE4307D V33 Infineon Technologies TLE4307.pdf Description: IC REG DL CHRPMP/LINEAR DPAK-5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ0945NDXTMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF324MBGL-GE1 CY9BF324MBGL-GE1 Infineon Technologies download Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Part Status: Obsolete
Number of I/O: 65
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB21N10 G SPB21N10 G Infineon Technologies SPB21N10.pdf Description: MOSFET N-CH 100V 21A D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4274V50AKSA1 TLE4274V50AKSA1 Infineon Technologies INFNS16630-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-3-1
Voltage - Output (Min/Fixed): 5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
auf Bestellung 39709 Stücke:
Lieferzeit 10-14 Tag (e)
400+1.20 EUR
Mindestbestellmenge: 400
Im Einkaufswagen  Stück im Wert von  UAH
TLE8457ALEXUMA1 TLE8457ALEXUMA1 Infineon Technologies Infineon-TLE8457-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d3694ae6179 Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 175 mV
Part Status: Not For New Designs
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.87 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TLE8457ALEXUMA1 TLE8457ALEXUMA1 Infineon Technologies Infineon-TLE8457-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d3694ae6179 Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 175 mV
Part Status: Not For New Designs
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.63 EUR
10+3.25 EUR
25+3.07 EUR
100+2.61 EUR
250+2.45 EUR
500+2.15 EUR
1000+1.87 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BSO083N03MSG BSO083N03MSG Infineon Technologies INFNS16223-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
auf Bestellung 1690 Stücke:
Lieferzeit 10-14 Tag (e)
1250+0.42 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
AIDW16S65C5XKSA1 AIDW16S65C5XKSA1 Infineon Technologies Infineon-AIDW16S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2d4eb5680 Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 471pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Qualification: AEC-Q100/101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIDW20S65C5XKSA1 AIDW20S65C5XKSA1 Infineon Technologies Infineon-AIDW20S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2ecdd5689 Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 584pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.24 EUR
10+12.86 EUR
100+10.65 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
AIDW30S65C5XKSA1 AIDW30S65C5XKSA1 Infineon Technologies Infineon-AIDW30S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2de0c5683 Description: DIODE SIL CARB 650V 30A TO247-3
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.86 EUR
10+15.23 EUR
100+12.61 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TZ800N16KOFTIMHPSA1 TZ800N16KOFTIMHPSA1 Infineon Technologies Infineon-TZ800N-DS-v03_05-EN.pdf?fileId=db3a304412b407950112b42f8b8e4c29 Description: SCR MODULE 1800V 1500A MODULE
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+991.07 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TD250N16KOFTIMHPSA1 TD250N16KOFTIMHPSA1 Infineon Technologies Infineon-TT250N-DataSheet-v03_04-EN.pdf?fileId=5546d4627112d9d501712afa3b233fcd Description: SCR MODULE 1800V 410A MODULE
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+381.60 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TT250N16KOFTIMHPSA1 TT250N16KOFTIMHPSA1 Infineon Technologies Infineon-TT250N-DataSheet-v03_04-EN.pdf?fileId=5546d4627112d9d501712afa3b233fcd Description: SCR MODULE 1800V 410A MODULE
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+397.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TT330N16KOFTIMHPSA1 TT330N16KOFTIMHPSA1 Infineon Technologies Infineon-TT330N-DS-v03_04-EN.pdf?fileId=5546d46269e1c019016a0c69cb4f4b54 Description: SCR MODULE 1600V 520A MODULE
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TT500N16KOFTIMHPSA1 TT500N16KOFTIMHPSA1 Infineon Technologies Infineon-TT500N-DS-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d Description: SCR MODULE 1800V 900A MODULE
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+644.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TD600N16KOFTIMHPSA1 TD600N16KOFTIMHPSA1 Infineon Technologies Infineon-TT600N16KOF-DS-v03_03-EN.pdf?fileId=5546d461464245d301466688b00360e0 Description: SCR MODULE 1600V 1050A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+664.10 EUR
Im Einkaufswagen  Stück im Wert von  UAH
V611480MHPSA1 Infineon Technologies Infineon-CLAMP_V61_14_80M-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a401461e177a6a1d5f Description: CLAMP DISK DEVICES 48MM HOUSINGS
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
V501445MHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V50..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d7110a909aa Description: CLAMP DISK DEVICES 42MM HOUSINGS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TD320N16SOFTIMHPSA1 Infineon Technologies Infineon-TT320N16SOF-DataSheet-v03_08-EN.pdf?fileId=5546d462525dbac40152cb734ec3695d Description: LT-BOND MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT320N16SOFTIMHPSA1 TT320N16SOFTIMHPSA1 Infineon Technologies Infineon-TT320N16SOF-DataSheet-v03_08-EN.pdf?fileId=5546d462525dbac40152cb734ec3695d Description: LT-BOND MODULE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
V7226120MHPSA1 Infineon Technologies Infineon-Clamp_for_disc_devices_V72-26..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d836b900b0a Description: CLAMP DISK DEVICES 58MM HOUSINGS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD261N22KTIMHPSA1 DD261N22KTIMHPSA1 Infineon Technologies Infineon-DD261N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fa08c4ca0 Description: THYR / DIODE MODULE DK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD540N22KTIMHPSA1 DD540N22KTIMHPSA1 Infineon Technologies Infineon-DD540N22K-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b42fa11c4ca4 Description: DIODE MOD GP 2200V 540A BGPB60AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 540A
Supplier Device Package: BG-PB60AT-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1.7 kA
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DZ1100N22KTIMHPSA1 Infineon Technologies Infineon-DZ1100N22K-DS-v03_02-EN.pdf?fileId=5546d461464245d3014666d0f4e1611c Description: THYR / DIODE MODULE DK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE42994GXUMA1 TLE42994GXUMA1 Infineon Technologies Infineon-TLE42994-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8524621f51 Description: IC REG LINEAR 5V 150MA DSO8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLE42994GMV33XUMA1 TLE42994GMV33XUMA1 Infineon Technologies Infineon-TLE42994-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595f8517351f4c Description: IC REG LINEAR 3.3V 150MA DSO14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD90N08S405ATMA1 IPD90N08S405ATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 80V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.36 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1059DV33-12ZSXQ CY7C1059DV33-12ZSXQ Infineon Technologies Infineon-CY7C1059DV33_8-Mbit_(1M_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e10737db Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tube
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
auf Bestellung 20430 Stücke:
Lieferzeit 10-14 Tag (e)
1+19.85 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R2K0CEAUMA1 IPD50R2K0CEAUMA1 Infineon Technologies Infineon-IPD50R2K0CE-DS-v02_03-EN.pdf?fileId=db3a30433ecb86d4013ed08fda5f0f0f Description: MOSFET N-CH 500V 2.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
33+0.54 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R1K4CEAUMA1 IPD50R1K4CEAUMA1 Infineon Technologies Infineon-IPD50R1K4CE-DS-v02_03-EN.pdf?fileId=db3a304339dcf4b10139e7c997862ca7 Description: MOSFET N-CH 500V 3.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.34 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R1K4CEAUMA1 IPD50R1K4CEAUMA1 Infineon Technologies Infineon-IPD50R1K4CE-DS-v02_03-EN.pdf?fileId=db3a304339dcf4b10139e7c997862ca7 Description: MOSFET N-CH 500V 3.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
auf Bestellung 4935 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.00 EUR
21+0.86 EUR
100+0.60 EUR
500+0.47 EUR
1000+0.38 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R650CEAUMA1 IPD50R650CEAUMA1 Infineon Technologies Infineon-IPD50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d41341a202a1 Description: MOSFET N-CH 500V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
auf Bestellung 1223 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.92 EUR
15+1.24 EUR
100+0.81 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R650CEBTMA1 IPD50R650CEBTMA1 Infineon Technologies Infineon-IPD50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d41341a202a1 Description: MOSFET N-CH 500V 6.1A TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC70N04S54R6ATMA1 IPC70N04S54R6ATMA1 Infineon Technologies Infineon-IPC70N04S5-4R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801e625290d Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12615 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.24 EUR
13+1.40 EUR
100+0.93 EUR
500+0.72 EUR
1000+0.64 EUR
2000+0.60 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPP070N08N3GXKSA1 IPP070N08N3GXKSA1 Infineon Technologies INFN-S-A0001300127-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
auf Bestellung 7700 Stücke:
Lieferzeit 10-14 Tag (e)
310+1.63 EUR
Mindestbestellmenge: 310
Im Einkaufswagen  Stück im Wert von  UAH
SAF-XC164TM-16F20F BA SAF-XC164TM-16F20F BA Infineon Technologies XC164TM.pdf Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SAF-XC164TM-16F40F BA SAF-XC164TM-16F40F BA Infineon Technologies XC164TM.pdf Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSO040N03MSGXUMA1 BSO040N03MSGXUMA1 Infineon Technologies BSO040N03MS_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d4dfc657dd7 Description: MOSFET N-CH 30V 16A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
auf Bestellung 1283 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.08 EUR
10+1.96 EUR
100+1.33 EUR
500+1.06 EUR
1000+0.97 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IR25604SPBF-INF IR25604SPBF-INF Infineon Technologies IRSDS13486-1.pdf?t.download=true&u=5oefqw Description: HIGH AND LOW SIDE DRIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR25606SPBF-INF IR25606SPBF-INF Infineon Technologies IRSDS19323-1.pdf?t.download=true&u=5oefqw Description: HALF BRIDGE BASED PERIPHERAL DRI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC808-40WE6327 BC808-40WE6327 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 25V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
10764+0.05 EUR
Mindestbestellmenge: 10764
Im Einkaufswagen  Stück im Wert von  UAH
BC808-40W BC808-40W Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 25V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC808-40E6327 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 25V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGSX24MU16E6327XUSA1 BGSX24MU16E6327XUSA1 Infineon Technologies Infineon-BGSX24MU16-DataSheet-v02_01-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214 Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ105N04NSG BSZ105N04NSG Infineon Technologies INFNS16243-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS POWER-MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLU3636-701TRP Infineon Technologies Part_Number_Guide_Web.pdf Description: MOSFET N-CH 60V 50A IPAK
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP420H6433XTMA1 BFP420H6433XTMA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP420H6433XTMA1 BFP420H6433XTMA1 Infineon Technologies BFP420_Rev2013.pdf Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 2406 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
35+0.52 EUR
39+0.46 EUR
100+0.40 EUR
250+0.37 EUR
500+0.35 EUR
1000+0.34 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
TLE42712GATMA TLE42712GATMA Infineon Technologies Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC24N10S5L300ATMA1 IAUC24N10S5L300ATMA1 Infineon Technologies Infineon-IAUC24N10S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6284a70dcf Description: MOSFET N-CH 100V 24A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.55 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BGAU1A10E6327XTSA1 BGAU1A10E6327XTSA1 Infineon Technologies Infineon-BGAU1A10-DS-v03_00-EN.pdf?fileId=5546d462636cc8fb0163926acb524baa Description: IC RF AMP LTE 5.15GHZ-5.925GHZ 1
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Frequency: 5.15GHz ~ 5.925GHz
RF Type: LTE
Voltage - Supply: 1.7V ~ 1.9V
Current - Supply: 5mA
Noise Figure: 1.7dB ~ 6.5dB
P1dB: -1dBm
Test Frequency: 5GHz
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS75R07W2E3B11ABOMA1 FS75R07W2E3B11ABOMA1 Infineon Technologies Infineon-FS75R07W2E3_B11A-DS-v03_00-en_de.pdf?fileId=db3a3043345a30bc01345aebc79e0071 Description: IGBT MODULES
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: ACEPACK™ 2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 275 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE3AR1080JGXUMA1 ICE3AR1080JGXUMA1 Infineon Technologies Infineon-ICE3AR1080JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf4c0d7510 Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17.3 V
Part Status: Active
Power (Watts): 62 W
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.77 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IRS2301STRPBF IRSDS10790-1.pdf?t.download=true&u=5oefqw
IRS2301STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 5865 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
15+1.19 EUR
25+1.08 EUR
100+0.95 EUR
250+0.89 EUR
500+0.85 EUR
1000+0.82 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IPD14N06S280ATMA2 INFNS09524-1.pdf?t.download=true&u=5oefqw
IPD14N06S280ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 17A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3479 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
31+0.58 EUR
100+0.53 EUR
500+0.52 EUR
1000+0.50 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
BSC094N06LS5ATMA1 Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3
BSC094N06LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.67 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BSC094N06LS5ATMA1 Infineon-BSC094N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5ce52407ba3
BSC094N06LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 60V 47A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 6864 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
12+1.53 EUR
100+1.10 EUR
500+0.84 EUR
1000+0.71 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPB034N06N3G INFNS16279-1.pdf?t.download=true&u=5oefqw
IPB034N06N3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TO263-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 3146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
258+1.88 EUR
Mindestbestellmenge: 258
Im Einkaufswagen  Stück im Wert von  UAH
IPP084N06L3GXK INFNS19509-1.pdf?t.download=true&u=5oefqw
IPP084N06L3GXK
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4307D V33 TLE4307.pdf
TLE4307D V33
Hersteller: Infineon Technologies
Description: IC REG DL CHRPMP/LINEAR DPAK-5
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ0945NDXTMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY9BF324MBGL-GE1 download
CY9BF324MBGL-GE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Part Status: Obsolete
Number of I/O: 65
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB21N10 G SPB21N10.pdf
SPB21N10 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 21A D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE4274V50AKSA1 INFNS16630-1.pdf?t.download=true&u=5oefqw
TLE4274V50AKSA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-3-1
Voltage - Output (Min/Fixed): 5V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
auf Bestellung 39709 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
400+1.20 EUR
Mindestbestellmenge: 400
Im Einkaufswagen  Stück im Wert von  UAH
TLE8457ALEXUMA1 Infineon-TLE8457-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d3694ae6179
TLE8457ALEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 175 mV
Part Status: Not For New Designs
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.87 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TLE8457ALEXUMA1 Infineon-TLE8457-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d3694ae6179
TLE8457ALEXUMA1
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 5V
Number of Drivers/Receivers: 1/1
Protocol: LINbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 175 mV
Part Status: Not For New Designs
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
10+3.25 EUR
25+3.07 EUR
100+2.61 EUR
250+2.45 EUR
500+2.15 EUR
1000+1.87 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
BSO083N03MSG INFNS16223-1.pdf?t.download=true&u=5oefqw
BSO083N03MSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 14A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
auf Bestellung 1690 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1250+0.42 EUR
Mindestbestellmenge: 1250
Im Einkaufswagen  Stück im Wert von  UAH
AIDW16S65C5XKSA1 Infineon-AIDW16S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2d4eb5680
AIDW16S65C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 16A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 471pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
Qualification: AEC-Q100/101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIDW20S65C5XKSA1 Infineon-AIDW20S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2ecdd5689
AIDW20S65C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 584pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.24 EUR
10+12.86 EUR
100+10.65 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
AIDW30S65C5XKSA1 Infineon-AIDW30S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2de0c5683
AIDW30S65C5XKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 650V 30A TO247-3
auf Bestellung 176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.86 EUR
10+15.23 EUR
100+12.61 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TZ800N16KOFTIMHPSA1 Infineon-TZ800N-DS-v03_05-EN.pdf?fileId=db3a304412b407950112b42f8b8e4c29
TZ800N16KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 1500A MODULE
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+991.07 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TD250N16KOFTIMHPSA1 Infineon-TT250N-DataSheet-v03_04-EN.pdf?fileId=5546d4627112d9d501712afa3b233fcd
TD250N16KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 410A MODULE
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+381.60 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TT250N16KOFTIMHPSA1 Infineon-TT250N-DataSheet-v03_04-EN.pdf?fileId=5546d4627112d9d501712afa3b233fcd
TT250N16KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 410A MODULE
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+397.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TT330N16KOFTIMHPSA1 Infineon-TT330N-DS-v03_04-EN.pdf?fileId=5546d46269e1c019016a0c69cb4f4b54
TT330N16KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1600V 520A MODULE
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TT500N16KOFTIMHPSA1 Infineon-TT500N-DS-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d
TT500N16KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 900A MODULE
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+644.48 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TD600N16KOFTIMHPSA1 Infineon-TT600N16KOF-DS-v03_03-EN.pdf?fileId=5546d461464245d301466688b00360e0
TD600N16KOFTIMHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1600V 1050A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 21000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Part Status: Active
Current - On State (It (RMS)) (Max): 1050 A
Voltage - Off State: 1.6 kV
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+664.10 EUR
Im Einkaufswagen  Stück im Wert von  UAH
V611480MHPSA1 Infineon-CLAMP_V61_14_80M-DS-v03_00-en_de.pdf?fileId=5546d46145f1f3a401461e177a6a1d5f
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 48MM HOUSINGS
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
V501445MHPSA1 Infineon-Clamp_for_disc_devices_V50..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d7110a909aa
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 42MM HOUSINGS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TD320N16SOFTIMHPSA1 Infineon-TT320N16SOF-DataSheet-v03_08-EN.pdf?fileId=5546d462525dbac40152cb734ec3695d
Hersteller: Infineon Technologies
Description: LT-BOND MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 150 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9500A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 320 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 520 A
Voltage - Off State: 1.6 kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TT320N16SOFTIMHPSA1 Infineon-TT320N16SOF-DataSheet-v03_08-EN.pdf?fileId=5546d462525dbac40152cb734ec3695d
TT320N16SOFTIMHPSA1
Hersteller: Infineon Technologies
Description: LT-BOND MODULE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
V7226120MHPSA1 Infineon-Clamp_for_disc_devices_V72-26..M-DS-v03_00-EN.pdf?fileId=5546d462525dbac401532d836b900b0a
Hersteller: Infineon Technologies
Description: CLAMP DISK DEVICES 58MM HOUSINGS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD261N22KTIMHPSA1 Infineon-DD261N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fa08c4ca0
DD261N22KTIMHPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD540N22KTIMHPSA1 Infineon-DD540N22K-DataSheet-v03_02-EN.pdf?fileId=db3a304412b407950112b42fa11c4ca4
DD540N22KTIMHPSA1
Hersteller: Infineon Technologies
Description: DIODE MOD GP 2200V 540A BGPB60AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 540A
Supplier Device Package: BG-PB60AT-1
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1.7 kA
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DZ1100N22KTIMHPSA1 Infineon-DZ1100N22K-DS-v03_02-EN.pdf?fileId=5546d461464245d3014666d0f4e1611c
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE42994GXUMA1 Infineon-TLE42994-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8524621f51
TLE42994GXUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 150MA DSO8
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TLE42994GMV33XUMA1 Infineon-TLE42994-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595f8517351f4c
TLE42994GMV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 150MA DSO14
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPD90N08S405ATMA1 fundamentals-of-power-semiconductors
IPD90N08S405ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 90A, 10V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.36 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1059DV33-12ZSXQ Infineon-CY7C1059DV33_8-Mbit_(1M_8)_Static_RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec2e10737db
CY7C1059DV33-12ZSXQ
Hersteller: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tube
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
auf Bestellung 20430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.85 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R2K0CEAUMA1 Infineon-IPD50R2K0CE-DS-v02_03-EN.pdf?fileId=db3a30433ecb86d4013ed08fda5f0f0f
IPD50R2K0CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 2.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
33+0.54 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R1K4CEAUMA1 Infineon-IPD50R1K4CE-DS-v02_03-EN.pdf?fileId=db3a304339dcf4b10139e7c997862ca7
IPD50R1K4CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 3.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.34 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R1K4CEAUMA1 Infineon-IPD50R1K4CE-DS-v02_03-EN.pdf?fileId=db3a304339dcf4b10139e7c997862ca7
IPD50R1K4CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 3.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
auf Bestellung 4935 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.00 EUR
21+0.86 EUR
100+0.60 EUR
500+0.47 EUR
1000+0.38 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R650CEAUMA1 Infineon-IPD50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d41341a202a1
IPD50R650CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 9A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
auf Bestellung 1223 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
15+1.24 EUR
100+0.81 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
IPD50R650CEBTMA1 Infineon-IPD50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d41341a202a1
IPD50R650CEBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 6.1A TO252-3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPC70N04S54R6ATMA1 Infineon-IPC70N04S5-4R6-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101590801e625290d
IPC70N04S54R6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 70A 8TDSON-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 35A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 17µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 12615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
13+1.40 EUR
100+0.93 EUR
500+0.72 EUR
1000+0.64 EUR
2000+0.60 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
IPP070N08N3GXKSA1 INFN-S-A0001300127-1.pdf?t.download=true&u=5oefqw
IPP070N08N3GXKSA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
auf Bestellung 7700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
310+1.63 EUR
Mindestbestellmenge: 310
Im Einkaufswagen  Stück im Wert von  UAH
SAF-XC164TM-16F20F BA XC164TM.pdf
SAF-XC164TM-16F20F BA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SAF-XC164TM-16F40F BA XC164TM.pdf
SAF-XC164TM-16F40F BA
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSO040N03MSGXUMA1 BSO040N03MS_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d4dfc657dd7
BSO040N03MSGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
auf Bestellung 1283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
10+1.96 EUR
100+1.33 EUR
500+1.06 EUR
1000+0.97 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
IR25604SPBF-INF IRSDS13486-1.pdf?t.download=true&u=5oefqw
IR25604SPBF-INF
Hersteller: Infineon Technologies
Description: HIGH AND LOW SIDE DRIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR25606SPBF-INF IRSDS19323-1.pdf?t.download=true&u=5oefqw
IR25606SPBF-INF
Hersteller: Infineon Technologies
Description: HALF BRIDGE BASED PERIPHERAL DRI
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC808-40WE6327 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC808-40WE6327
Hersteller: Infineon Technologies
Description: TRANS PNP 25V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10764+0.05 EUR
Mindestbestellmenge: 10764
Im Einkaufswagen  Stück im Wert von  UAH
BC808-40W INFNS11647-1.pdf?t.download=true&u=5oefqw
BC808-40W
Hersteller: Infineon Technologies
Description: TRANS PNP 25V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC808-40E6327 INFNS11647-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TRANS PNP 25V 0.5A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGSX24MU16E6327XUSA1 Infineon-BGSX24MU16-DataSheet-v02_01-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214
BGSX24MU16E6327XUSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSZ105N04NSG INFNS16243-1.pdf?t.download=true&u=5oefqw
BSZ105N04NSG
Hersteller: Infineon Technologies
Description: OPTLMOS POWER-MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLU3636-701TRP Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A IPAK
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP420H6433XTMA1 BFP420_Rev2013.pdf
BFP420H6433XTMA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BFP420H6433XTMA1 BFP420_Rev2013.pdf
BFP420H6433XTMA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 5V 25GHZ PG-SOT-343
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 21dB
Power - Max: 160mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
auf Bestellung 2406 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
35+0.52 EUR
39+0.46 EUR
100+0.40 EUR
250+0.37 EUR
500+0.35 EUR
1000+0.34 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
TLE42712GATMA Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f
TLE42712GATMA
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 550mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: P-TO220-7-11
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.7V @ 550mA
Protection Features: Antisaturation, Over Temperature, Over Voltage, Reverse Polarity, Short Circuit
Current - Supply (Max): 90 mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IAUC24N10S5L300ATMA1 Infineon-IAUC24N10S5L300-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c8a6284a70dcf
IAUC24N10S5L300ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 24A TDSON-8-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 12µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.55 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
BGAU1A10E6327XTSA1 Infineon-BGAU1A10-DS-v03_00-EN.pdf?fileId=5546d462636cc8fb0163926acb524baa
BGAU1A10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP LTE 5.15GHZ-5.925GHZ 1
Packaging: Cut Tape (CT)
Package / Case: 10-UFQFN
Mounting Type: Surface Mount
Frequency: 5.15GHz ~ 5.925GHz
RF Type: LTE
Voltage - Supply: 1.7V ~ 1.9V
Current - Supply: 5mA
Noise Figure: 1.7dB ~ 6.5dB
P1dB: -1dBm
Test Frequency: 5GHz
Part Status: Last Time Buy
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS75R07W2E3B11ABOMA1 Infineon-FS75R07W2E3_B11A-DS-v03_00-en_de.pdf?fileId=db3a3043345a30bc01345aebc79e0071
FS75R07W2E3B11ABOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULES
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: ACEPACK™ 2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 95 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 275 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ICE3AR1080JGXUMA1 Infineon-ICE3AR1080JG-DS-v01_00-EN.pdf?fileId=5546d46253f6505701549aaf4c0d7510
ICE3AR1080JGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DSO-12-19
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 17.3 V
Part Status: Active
Power (Watts): 62 W
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.77 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 248 359 360 361 362 363 364 365 366 367 368 369 496 744 992 1240 1488 1736 1984 2232 2480 2482  [ Nächste Seite >> ]