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BAS7004E6433HTMA1 BAS7004E6433HTMA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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28+0.75 EUR
46+0.46 EUR
63+0.33 EUR
100+0.3 EUR
500+0.21 EUR
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TLE4274DV50ATMA2 TLE4274DV50ATMA2 Infineon Technologies Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1 Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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TLE4274DV50ATMA2 TLE4274DV50ATMA2 Infineon Technologies Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1 Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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11+1.98 EUR
25+1.8 EUR
100+1.59 EUR
250+1.5 EUR
500+1.44 EUR
1000+1.42 EUR
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CY7C4211V-15AXI CY7C4211V-15AXI Infineon Technologies CY7C42x1V_Rev2015.pdf Description: IC FIFO SYNC 512X9 10NS 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: -40°C ~ 85°C
Data Rate: 66.7MHz
Access Time: 10ns
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: No
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
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TLE9271QXV33XUMA1 TLE9271QXV33XUMA1 Infineon Technologies Infineon-TLE9271QX%20V33-DS-v01_03-EN.pdf?fileId=5546d46268554f4a0168854f82cf6859 Description: IC REG 4OUT VQFN-48-31
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TC366DP64F300SAAKXUMA1 TC366DP64F300SAAKXUMA1 Infineon Technologies infineon-aurix-tc36x-addendum-datasheet-en.pdf Description: IC MCU 32BIT 4MB FLASH 180LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 180-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-180-1
Part Status: Active
DigiKey Programmable: Not Verified
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TC366DP64F300SAALXUMA1 TC366DP64F300SAALXUMA1 Infineon Technologies infineon-sak-tc36xdp-datasheet-en.pdf Description: IC MCU 32BIT 4MB FLASH 180LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 180-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-180-1
DigiKey Programmable: Not Verified
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BAT62-02WH6327 BAT62-02WH6327 Infineon Technologies Description: MIXER DIODE, LOW BARRIER
Packaging: Bulk
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT62-02LSE6327 BAT62-02LSE6327 Infineon Technologies INFNS15703-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 40V 100MW TSSLP-2
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT62-02WE6327 BAT62-02WE6327 Infineon Technologies Description: MIXER DIODE, LOW BARRIER
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOD323-2
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT62E6327 BAT62E6327 Infineon Technologies INFNS15703-1.pdf?t.download=true&u=5oefqw Description: MIXER DIODE, LOW BARRIER
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - Anti-Parallel
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SOT-143-4
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT62E6327HTSA1 BAT62E6327HTSA1 Infineon Technologies Infineon-BAT62-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1997a91e3eb2 Description: DIODE SCHOTTKY 40V 100MW SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT6202LE6327XTMA1 BAT6202LE6327XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW TSLP21
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSLP-2-1
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT6207L4E6327XT BAT6207L4E6327XT Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW TSLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: TSLP-4-4
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT6207L4E6433XTMA1 BAT6207L4E6433XTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW TSLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: TSLP-4-4
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
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BAT6207WE6327HTSA1 BAT6207WE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT 62-09S E6327 BAT 62-09S E6327 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT363-PO
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT 62-02W E6327 BAT 62-02W E6327 Infineon Technologies bat62series.pdf Description: DIODE SCHOTTKY 40V 100MW SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6202LSE6327XTSA1 BAT6202LSE6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6202WH6327XTSA1 BAT6202WH6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6203WE6327HTSA1 BAT6203WE6327HTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6207WH6327XTSA1 BAT6207WH6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE SCHOTTKY 40V 100MW SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BTS740S2XUMA1 BTS740S2XUMA1 Infineon Technologies Infineon-BTS740S2-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa390ea280fe0 Description: IC POWER SW PG-DSO-20
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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10+10.23 EUR
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100+8.64 EUR
250+8.38 EUR
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BTS740S2NT BTS740S2NT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
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TLE4274GV852ATMA1 TLE4274GV852ATMA1 Infineon Technologies Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1 Description: IC REG LIN 8.5V 400MA TO263-3-1
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
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CY7C0852AV-133BBC CY7C0852AV-133BBC Infineon Technologies CY7C0850-853AV.pdf Description: IC SRAM 4.5MBIT PAR 172FBGA
Packaging: Tray
Package / Case: 172-LBGA
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 172-FBGA (15x15)
Memory Interface: Parallel
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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S29GL01GT11TFIV10 S29GL01GT11TFIV10 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S29GL01GT11FHIV20 S29GL01GT11FHIV20 Infineon Technologies infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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25+28.12 EUR
50+27.44 EUR
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T2810N54P270HOSA1 Infineon Technologies Description: MOD DIODE THYRISTOR
Produkt ist nicht verfügbar
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IPB120N06S402ATMA2 IPB120N06S402ATMA2 Infineon Technologies Infineon-I120N06S4_02-DS-v01_02-en.pdf?fileId=db3a30431ff9881501203890b6410cb8 Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
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IPB120N06S402ATMA2 IPB120N06S402ATMA2 Infineon Technologies Infineon-I120N06S4_02-DS-v01_02-en.pdf?fileId=db3a30431ff9881501203890b6410cb8 Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
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EVALAHNBIM69D130V01TOBO1 EVALAHNBIM69D130V01TOBO1 Infineon Technologies infineon-ug095149-audiohub-nano-digital-xensiv-mems-microphones-evaluation-board-usermanual-en.pdf Description: EVAL BOARD FOR IM69D130
Packaging: Box
Function: Microphone
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM69D130
Supplied Contents: Board(s)
Secondary Attributes: Graphical User Interface (GUI)
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IPD50N04S308ATMA1-INF Infineon Technologies Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
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PEF81913FV1.4 PEF81913FV1.4 Infineon Technologies Description: Q-SMINTIX SECOND GEN
Packaging: Bulk
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BF2040RE6814 BF2040RE6814 Infineon Technologies INFNS10671-1.pdf?t.download=true&u=5oefqw Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 50µA
Mounting Type: Surface Mount
Frequency: 1GHz
Configuration: N-Channel
Gain: 23dB
Technology: MOSFET
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT143-4
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF2040E6814 BF2040E6814 Infineon Technologies INFNS10671-1.pdf?t.download=true&u=5oefqw Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 23dB
Technology: MOSFET
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF 2040 E6814 Infineon Technologies INFNS10671-1.pdf?t.download=true&u=5oefqw Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 50µA
Mounting Type: Surface Mount
Frequency: 1GHz
Configuration: N-Channel
Gain: 23dB
Technology: MOSFET
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT143-4
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF20-40E6814 BF20-40E6814 Infineon Technologies INFNS10671-1.pdf?t.download=true&u=5oefqw Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 50µA
Mounting Type: Surface Mount
Frequency: 1GHz
Configuration: N-Channel
Gain: 23dB
Technology: MOSFET
Noise Figure: 1.6dB @ 800MHz
Supplier Device Package: PG-SOT143-4
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 15 mA
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BF2040E6814HTSA BF2040E6814HTSA Infineon Technologies INFNS10671-1.pdf?t.download=true&u=5oefqw Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 50µA
Mounting Type: Surface Mount
Frequency: 1GHz
Configuration: N-Channel
Gain: 23dB
Technology: MOSFET
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT143-4
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 15 mA
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CY7C4225-15AC CY7C4225-15AC Infineon Technologies CY7C4xx5.pdf Description: IC SYNC FIFO MEM 1KX18 64LQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 18K (1K x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
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CY7C4225-15ASXC CY7C4225-15ASXC Infineon Technologies CY7C4xx5_RevA.pdf Description: IC SYNC FIFO MEM 1KX18 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 18K (1K x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
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IPL60R160CFD7AUMA1 IPL60R160CFD7AUMA1 Infineon Technologies Infineon-IPL60R160CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46262b31d2e01633ef18bea4d44 Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.8A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-VSON-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Produkt ist nicht verfügbar
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IPL60R160CFD7AUMA1 IPL60R160CFD7AUMA1 Infineon Technologies Infineon-IPL60R160CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46262b31d2e01633ef18bea4d44 Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.8A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-VSON-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
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IPL60R185C7AUMA1 IPL60R185C7AUMA1 Infineon Technologies Infineon-IPL60R185C7-DS-v02_01-EN.pdf?fileId=5546d462518ffd850151b42d65c55913 Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
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IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 Infineon Technologies infineon-ipd50p04p4l-11-datasheet-cn.pdf Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Qualification: AEC-Q101
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2500+0.93 EUR
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IPD50P04P4L11ATMA2 IPD50P04P4L11ATMA2 Infineon Technologies infineon-ipd50p04p4l-11-datasheet-cn.pdf Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Qualification: AEC-Q101
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7+3.37 EUR
10+2.13 EUR
50+1.61 EUR
100+1.43 EUR
500+1.13 EUR
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IRGSL15B60KDPBF-INF IRGSL15B60KDPBF-INF Infineon Technologies IRSDS10534-1.pdf?t.download=true&u=5oefqw Description: IGBT NPT 600V 31A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/184ns
Switching Energy: 220µJ (on), 340µJ (off)
Test Condition: 400V, 15A, 22Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 208 W
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PMA7106 Infineon Technologies INFNS17057-1.pdf?t.download=true&u=5oefqw Description: 8-BIT FLASH MCU, 8051 CPU, 12MHZ
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Memory Size: 6KB Flash, 12KB ROM, 256 Byte RAM
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 10dBm
Applications: Remote Control, Remote Metering
Data Rate (Max): 20kbps
Current - Transmitting: 17.1mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4276SV50 Infineon Technologies INFNS14692-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-5
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-5-12
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
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TLE4276DVATMA2 TLE4276DVATMA2 Infineon Technologies infineon-tle4276-datasheet-cn.pdf Description: IC REG LIN POS ADJ 400MA TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
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TLE4276DVATMA2 TLE4276DVATMA2 Infineon Technologies infineon-tle4276-datasheet-cn.pdf Description: IC REG LIN POS ADJ 400MA TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
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IM240S6Y2BAKMA1 IM240S6Y2BAKMA1 Infineon Technologies Infineon-IM240-DataSheet-v02_03-EN.pdf?fileId=5546d4626fc1ce0b016ff190f50445ea Description: MODULE IGBT 600V 3A 23PWRDIP
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BFN39E6327HTSA1 BFN39E6327HTSA1 Infineon Technologies bfn39.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c441c4023a Description: TRANS PNP 300V 200MA SOT223-4
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IPD90N04S40-4ATMA1 IPD90N04S40-4ATMA1 Infineon Technologies INFNS15027-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 90A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
Produkt ist nicht verfügbar
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IR11662STRPBF IR11662STRPBF Infineon Technologies IR11662S.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11.4V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 21ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 1A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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IR11662STRPBF IR11662STRPBF Infineon Technologies IR11662S.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11.4V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 21ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 1A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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100+2.13 EUR
250+2.01 EUR
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BFR380TE6327 BFR380TE6327 Infineon Technologies INFNS17632-1.pdf?t.download=true&u=5oefqw Description: RF TRANS NPN 9V 14GHZ PG-SC-75
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 380mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SC-75
Part Status: Active
auf Bestellung 145299 Stücke:
Lieferzeit 10-14 Tag (e)
2358+0.24 EUR
Mindestbestellmenge: 2358 Stücke
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BFR380FH6327XTSA1 BFR380FH6327XTSA1 Infineon Technologies Infineon-BFR380F-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f040158393a Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB ~ 13.5dB
Power - Max: 380mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.25 EUR
9000+0.24 EUR
Mindestbestellmenge: 3000 Stücke
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BFR380FH6327XTSA1 BFR380FH6327XTSA1 Infineon Technologies Infineon-BFR380F-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f040158393a Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB ~ 13.5dB
Power - Max: 380mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
auf Bestellung 55528 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.61 EUR
50+0.43 EUR
56+0.38 EUR
100+0.32 EUR
250+0.3 EUR
500+0.29 EUR
1000+0.27 EUR
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IR3801AMTRPBF IR3801AMTRPBF Infineon Technologies IR3801AMPBF.pdf Description: IC REG BUCK ADJ 9A PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 9A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 3390 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.68 EUR
10+4.24 EUR
25+3.88 EUR
100+3.49 EUR
250+3.3 EUR
500+3.19 EUR
1000+3.09 EUR
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BAS7004E6433HTMA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7004E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 3126 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
46+0.46 EUR
63+0.33 EUR
100+0.3 EUR
500+0.21 EUR
Mindestbestellmenge: 28 Stücke
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TLE4274DV50ATMA2 Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1
TLE4274DV50ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TLE4274DV50ATMA2 Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1
TLE4274DV50ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-3-11
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 1620 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.7 EUR
11+1.98 EUR
25+1.8 EUR
100+1.59 EUR
250+1.5 EUR
500+1.44 EUR
1000+1.42 EUR
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CY7C4211V-15AXI CY7C42x1V_Rev2015.pdf
CY7C4211V-15AXI
Hersteller: Infineon Technologies
Description: IC FIFO SYNC 512X9 10NS 32TQFP
Packaging: Tray
Package / Case: 32-TQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 4.5K (512 x 9)
Operating Temperature: -40°C ~ 85°C
Data Rate: 66.7MHz
Access Time: 10ns
Supplier Device Package: 32-TQFP (7x7)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: No
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+28.31 EUR
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TLE9271QXV33XUMA1 Infineon-TLE9271QX%20V33-DS-v01_03-EN.pdf?fileId=5546d46268554f4a0168854f82cf6859
TLE9271QXV33XUMA1
Hersteller: Infineon Technologies
Description: IC REG 4OUT VQFN-48-31
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TC366DP64F300SAAKXUMA1 infineon-aurix-tc36x-addendum-datasheet-en.pdf
TC366DP64F300SAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 180LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 180-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-180-1
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+34.26 EUR
Mindestbestellmenge: 1500 Stücke
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TC366DP64F300SAALXUMA1 infineon-sak-tc36xdp-datasheet-en.pdf
TC366DP64F300SAALXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 180LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 180-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LFBGA-180-1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAT62-02WH6327
BAT62-02WH6327
Hersteller: Infineon Technologies
Description: MIXER DIODE, LOW BARRIER
Packaging: Bulk
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT62-02LSE6327 INFNS15703-1.pdf?t.download=true&u=5oefqw
BAT62-02LSE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW TSSLP-2
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
auf Bestellung 21676 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2358+0.26 EUR
Mindestbestellmenge: 2358 Stücke
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BAT62-02WE6327
BAT62-02WE6327
Hersteller: Infineon Technologies
Description: MIXER DIODE, LOW BARRIER
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOD323-2
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT62E6327 INFNS15703-1.pdf?t.download=true&u=5oefqw
BAT62E6327
Hersteller: Infineon Technologies
Description: MIXER DIODE, LOW BARRIER
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - Anti-Parallel
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SOT-143-4
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT62E6327HTSA1 Infineon-BAT62-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1997a91e3eb2
BAT62E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOT143
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6202LE6327XTMA1 fundamentals-of-power-semiconductors
BAT6202LE6327XTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW TSLP21
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSLP-2-1
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BAT6207L4E6327XT fundamentals-of-power-semiconductors
BAT6207L4E6327XT
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW TSLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: TSLP-4-4
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
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BAT6207L4E6433XTMA1 fundamentals-of-power-semiconductors
BAT6207L4E6433XTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW TSLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: TSLP-4-4
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6207WE6327HTSA1 fundamentals-of-power-semiconductors
BAT6207WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT 62-09S E6327 fundamentals-of-power-semiconductors
BAT 62-09S E6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT363-PO
Part Status: Discontinued at Digi-Key
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BAT 62-02W E6327 bat62series.pdf
BAT 62-02W E6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
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BAT6202LSE6327XTSA1 fundamentals-of-power-semiconductors
BAT6202LSE6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW TSSLP-2
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-TSSLP-2-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6202WH6327XTSA1 fundamentals-of-power-semiconductors
BAT6202WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SCD80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: SCD-80
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6203WE6327HTSA1 fundamentals-of-power-semiconductors
BAT6203WE6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOD323-3D
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BAT6207WH6327XTSA1 fundamentals-of-power-semiconductors
BAT6207WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 100MW SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 40V
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
Current - Max: 20 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BTS740S2XUMA1 Infineon-BTS740S2-DS-v01_00-EN.pdf?fileId=5546d4625a888733015aa390ea280fe0
BTS740S2XUMA1
Hersteller: Infineon Technologies
Description: IC POWER SW PG-DSO-20
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3225 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.28 EUR
10+10.23 EUR
25+9.47 EUR
100+8.64 EUR
250+8.38 EUR
Mindestbestellmenge: 2 Stücke
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BTS740S2NT
BTS740S2NT
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 27mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-20-31
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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TLE4274GV852ATMA1 Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1
TLE4274GV852ATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 8.5V 400MA TO263-3-1
Packaging: Bulk
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 8.5V
Grade: Automotive
Part Status: Obsolete
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
267+2.18 EUR
Mindestbestellmenge: 267 Stücke
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CY7C0852AV-133BBC CY7C0850-853AV.pdf
CY7C0852AV-133BBC
Hersteller: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 172FBGA
Packaging: Tray
Package / Case: 172-LBGA
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.465V
Technology: SRAM - Dual Port, Synchronous
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 172-FBGA (15x15)
Memory Interface: Parallel
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
auf Bestellung 1101 Stücke:
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2+312.8 EUR
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S29GL01GT11TFIV10 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL01GT11TFIV10
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 431 Stücke:
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AnzahlPrivatkunde
1+29.32 EUR
10+27.2 EUR
25+26.35 EUR
91+25.17 EUR
182+24.54 EUR
273+24.17 EUR
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S29GL01GT11FHIV20 infineon-s29gl01gt-s29gl512t-1-gb-128-mb-512-mb-64-mb-gl-t-mirrorbit-eclipse-flash-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce
S29GL01GT11FHIV20
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
auf Bestellung 306 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+31.29 EUR
10+29.04 EUR
25+28.12 EUR
50+27.44 EUR
180+26.2 EUR
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T2810N54P270HOSA1
Hersteller: Infineon Technologies
Description: MOD DIODE THYRISTOR
Produkt ist nicht verfügbar
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IPB120N06S402ATMA2 Infineon-I120N06S4_02-DS-v01_02-en.pdf?fileId=db3a30431ff9881501203890b6410cb8
IPB120N06S402ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB120N06S402ATMA2 Infineon-I120N06S4_02-DS-v01_02-en.pdf?fileId=db3a30431ff9881501203890b6410cb8
IPB120N06S402ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 962 Stücke:
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3+7.88 EUR
10+5.18 EUR
100+3.64 EUR
500+2.99 EUR
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EVALAHNBIM69D130V01TOBO1 infineon-ug095149-audiohub-nano-digital-xensiv-mems-microphones-evaluation-board-usermanual-en.pdf
EVALAHNBIM69D130V01TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IM69D130
Packaging: Box
Function: Microphone
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM69D130
Supplied Contents: Board(s)
Secondary Attributes: Graphical User Interface (GUI)
Produkt ist nicht verfügbar
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IPD50N04S308ATMA1-INF
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 50A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Produkt ist nicht verfügbar
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PEF81913FV1.4
PEF81913FV1.4
Hersteller: Infineon Technologies
Description: Q-SMINTIX SECOND GEN
Packaging: Bulk
auf Bestellung 98 Stücke:
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18+32.24 EUR
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BF2040RE6814 INFNS10671-1.pdf?t.download=true&u=5oefqw
BF2040RE6814
Hersteller: Infineon Technologies
Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 50µA
Mounting Type: Surface Mount
Frequency: 1GHz
Configuration: N-Channel
Gain: 23dB
Technology: MOSFET
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT143-4
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 15 mA
auf Bestellung 9777 Stücke:
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AnzahlPrivatkunde
4157+0.14 EUR
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BF2040E6814 INFNS10671-1.pdf?t.download=true&u=5oefqw
BF2040E6814
Hersteller: Infineon Technologies
Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 40mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 23dB
Technology: MOSFET
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 15 mA
Produkt ist nicht verfügbar
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BF 2040 E6814 INFNS10671-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 50µA
Mounting Type: Surface Mount
Frequency: 1GHz
Configuration: N-Channel
Gain: 23dB
Technology: MOSFET
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT143-4
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 15 mA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3335+0.19 EUR
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BF20-40E6814 INFNS10671-1.pdf?t.download=true&u=5oefqw
BF20-40E6814
Hersteller: Infineon Technologies
Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 50µA
Mounting Type: Surface Mount
Frequency: 1GHz
Configuration: N-Channel
Gain: 23dB
Technology: MOSFET
Noise Figure: 1.6dB @ 800MHz
Supplier Device Package: PG-SOT143-4
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 15 mA
Produkt ist nicht verfügbar
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BF2040E6814HTSA INFNS10671-1.pdf?t.download=true&u=5oefqw
BF2040E6814HTSA
Hersteller: Infineon Technologies
Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 50µA
Mounting Type: Surface Mount
Frequency: 1GHz
Configuration: N-Channel
Gain: 23dB
Technology: MOSFET
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT143-4
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 15 mA
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3335+0.19 EUR
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CY7C4225-15AC CY7C4xx5.pdf
CY7C4225-15AC
Hersteller: Infineon Technologies
Description: IC SYNC FIFO MEM 1KX18 64LQFP
Packaging: Bag
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 18K (1K x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
auf Bestellung 80 Stücke:
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41+14.59 EUR
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CY7C4225-15ASXC CY7C4xx5_RevA.pdf
CY7C4225-15ASXC
Hersteller: Infineon Technologies
Description: IC SYNC FIFO MEM 1KX18 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 18K (1K x 18)
Operating Temperature: 0°C ~ 70°C
Data Rate: 66.7MHz
Access Time: 10ns
Current - Supply (Max): 45mA
Supplier Device Package: 64-TQFP (14x14)
Bus Directional: Uni-Directional
Expansion Type: Depth, Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Part Status: Obsolete
Voltage - Supply: 4.5 V ~ 5.5 V
auf Bestellung 279 Stücke:
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AnzahlPrivatkunde
21+29.21 EUR
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IPL60R160CFD7AUMA1 Infineon-IPL60R160CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46262b31d2e01633ef18bea4d44
IPL60R160CFD7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.8A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-VSON-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
Produkt ist nicht verfügbar
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IPL60R160CFD7AUMA1 Infineon-IPL60R160CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46262b31d2e01633ef18bea4d44
IPL60R160CFD7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 6.8A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-VSON-4-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 400 V
auf Bestellung 8 Stücke:
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AnzahlPrivatkunde
3+7.63 EUR
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IPL60R185C7AUMA1 Infineon-IPL60R185C7-DS-v02_01-EN.pdf?fileId=5546d462518ffd850151b42d65c55913
IPL60R185C7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 5.3A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-VSON-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Produkt ist nicht verfügbar
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IPD50P04P4L11ATMA2 infineon-ipd50p04p4l-11-datasheet-cn.pdf
IPD50P04P4L11ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
2500+0.93 EUR
7500+0.82 EUR
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IPD50P04P4L11ATMA2 infineon-ipd50p04p4l-11-datasheet-cn.pdf
IPD50P04P4L11ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 50A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 85µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 10781 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.37 EUR
10+2.13 EUR
50+1.61 EUR
100+1.43 EUR
500+1.13 EUR
Mindestbestellmenge: 7 Stücke
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IRGSL15B60KDPBF-INF IRSDS10534-1.pdf?t.download=true&u=5oefqw
IRGSL15B60KDPBF-INF
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 31A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/184ns
Switching Energy: 220µJ (on), 340µJ (off)
Test Condition: 400V, 15A, 22Ohm, 15V
Gate Charge: 56 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 208 W
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
250+3.06 EUR
Mindestbestellmenge: 250 Stücke
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PMA7106 INFNS17057-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 8-BIT FLASH MCU, 8051 CPU, 12MHZ
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Frequency: 315MHz, 434MHz, 868MHz, 915MHz
Memory Size: 6KB Flash, 12KB ROM, 256 Byte RAM
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.9V ~ 3.6V
Power - Output: 10dBm
Applications: Remote Control, Remote Metering
Data Rate (Max): 20kbps
Current - Transmitting: 17.1mA
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE4276SV50 INFNS14692-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Packaging: Bulk
Package / Case: TO-220-5
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-5-12
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Produkt ist nicht verfügbar
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TLE4276DVATMA2 infineon-tle4276-datasheet-cn.pdf
TLE4276DVATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 400MA TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.83 EUR
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TLE4276DVATMA2 infineon-tle4276-datasheet-cn.pdf
TLE4276DVATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 400MA TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Grade: Automotive
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
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4+5.38 EUR
10+4.01 EUR
25+3.68 EUR
100+3.3 EUR
250+3.12 EUR
500+3.06 EUR
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IM240S6Y2BAKMA1 Infineon-IM240-DataSheet-v02_03-EN.pdf?fileId=5546d4626fc1ce0b016ff190f50445ea
IM240S6Y2BAKMA1
Hersteller: Infineon Technologies
Description: MODULE IGBT 600V 3A 23PWRDIP
auf Bestellung 240 Stücke:
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BFN39E6327HTSA1 bfn39.pdf?folderId=db3a30431441fb5d011449af3ad90232&fileId=db3a30431441fb5d011449c441c4023a
BFN39E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 300V 200MA SOT223-4
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IPD90N04S40-4ATMA1 INFNS15027-1.pdf?t.download=true&u=5oefqw
IPD90N04S40-4ATMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 90A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35.2mA
Supplier Device Package: PG-TO252-3-313
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
Produkt ist nicht verfügbar
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IR11662STRPBF IR11662S.pdf
IR11662STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11.4V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 21ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 1A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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2500+1.81 EUR
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IR11662STRPBF IR11662S.pdf
IR11662STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11.4V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 21ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 2V, 2.15V
Current - Peak Output (Source, Sink): 1A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6687 Stücke:
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6+3.56 EUR
10+2.63 EUR
25+2.39 EUR
100+2.13 EUR
250+2.01 EUR
500+1.94 EUR
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BFR380TE6327 INFNS17632-1.pdf?t.download=true&u=5oefqw
BFR380TE6327
Hersteller: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ PG-SC-75
Packaging: Bulk
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 380mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 40mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Supplier Device Package: PG-SC-75
Part Status: Active
auf Bestellung 145299 Stücke:
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2358+0.24 EUR
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BFR380FH6327XTSA1 Infineon-BFR380F-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f040158393a
BFR380FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB ~ 13.5dB
Power - Max: 380mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
auf Bestellung 54000 Stücke:
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3000+0.25 EUR
9000+0.24 EUR
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BFR380FH6327XTSA1 Infineon-BFR380F-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f040158393a
BFR380FH6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 9.5dB ~ 13.5dB
Power - Max: 380mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 40mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
auf Bestellung 55528 Stücke:
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35+0.61 EUR
50+0.43 EUR
56+0.38 EUR
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500+0.29 EUR
1000+0.27 EUR
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IR3801AMTRPBF IR3801AMPBF.pdf
IR3801AMTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 9A PQFN
Packaging: Cut Tape (CT)
Package / Case: 15-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 9A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
auf Bestellung 3390 Stücke:
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4+5.68 EUR
10+4.24 EUR
25+3.88 EUR
100+3.49 EUR
250+3.3 EUR
500+3.19 EUR
1000+3.09 EUR
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