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IRFR3709ZTRLPBF IRFR3709ZTRLPBF Infineon Technologies irfr3709zpbf.pdf?fileId=5546d462533600a401535631a47a20c5 Description: MOSFET N-CH 30V 86A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
Produkt ist nicht verfügbar
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BTN7960BAUMA1 BTN7960BAUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MOTOR DRIVER 8V-18V TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 47A
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-TO263-7-1
Motor Type - AC, DC: Brushed DC
Produkt ist nicht verfügbar
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BTS282ZDELCO BTS282ZDELCO Infineon Technologies INFNS13361-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Drain to Source Voltage (Vdss): 49 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: P-TO220-7-3
Vgs(th) (Max) @ Id: 2V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-7 Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFS7430TRLPBF IRFS7430TRLPBF Infineon Technologies Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
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1600+2.76 EUR
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IRFS7430TRLPBF IRFS7430TRLPBF Infineon Technologies Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
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IPB65R660CFDAATMA1 IPB65R660CFDAATMA1 Infineon Technologies INFN-S-A0003823031-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
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IPB65R660CFDATMA1 IPB65R660CFDATMA1 Infineon Technologies IPx65R660CFD.pdf Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
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BAS1602VH6327XTSA1 BAS1602VH6327XTSA1 Infineon Technologies bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Description: DIODE STANDARD 80V 200MA PGSC792
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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213+0.099 EUR
261+0.081 EUR
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BAS7002VH6327XTSA1 BAS7002VH6327XTSA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 70V 70MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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55+0.38 EUR
100+0.24 EUR
500+0.18 EUR
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BAT6202VH6327XTSA1 BAT6202VH6327XTSA1 Infineon Technologies Infineon-BAT62-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017eb4959b1821f7 Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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BAT6202VH6327XTSA1 BAT6202VH6327XTSA1 Infineon Technologies Infineon-BAT62-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017eb4959b1821f7 Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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BBY5602VH6327XTSA1 BBY5602VH6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE VARACTOR 10V SNGL PG-SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2-1
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
Produkt ist nicht verfügbar
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IPB80N08S207ATMA1 IPB80N08S207ATMA1 Infineon Technologies Infineon-IPP_B_I80N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426df983adf&ack=t Description: MOSFET N-CH 75V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB80N08S207ATMA1 IPB80N08S207ATMA1 Infineon Technologies Infineon-IPP_B_I80N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426df983adf&ack=t Description: MOSFET N-CH 75V 80A TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 389 Stücke:
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10+7.07 EUR
100+5.08 EUR
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IPD70N04S307ATMA1 IPD70N04S307ATMA1 Infineon Technologies INFNS11352-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFI7536GPBF IRFI7536GPBF Infineon Technologies irfi7536gpbf.pdf Description: MOSFET N-CH 60V 86A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
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TLE92623BQXV33XUMA1 TLE92623BQXV33XUMA1 Infineon Technologies Infineon-TLE9262-3BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc80160978ed9493954 Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
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TLE92623BQXV33XUMA1 TLE92623BQXV33XUMA1 Infineon Technologies Infineon-TLE9262-3BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc80160978ed9493954 Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
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100+4.57 EUR
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TLE92623BQXXUMA1 TLE92623BQXXUMA1 Infineon Technologies Infineon-TLE9262-3BQX-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609785aa013951 Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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TLE92623BQXXUMA1 TLE92623BQXXUMA1 Infineon Technologies Infineon-TLE9262-3BQX-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609785aa013951 Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
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10+5.66 EUR
25+5.2 EUR
100+4.7 EUR
250+4.46 EUR
500+4.32 EUR
1000+4.2 EUR
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IPB50R199CP IPB50R199CP Infineon Technologies INFNS15809-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 500V 17A TO263-3-2
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IRFHM8334TRPBF-INF IRFHM8334TRPBF-INF Infineon Technologies IRSDS19389-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 13A/43A 8PQFN DL
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T2563NH80TOHXOSA1 T2563NH80TOHXOSA1 Infineon Technologies Infineon-T2563NH-DS-v11_00-en_de.pdf?fileId=db3a304412b407950112b430fab552bb Description: SCR 8KV 3600A BG-T17240L-1
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: 120°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Current - On State (It (AV)) (Max): 3330 A
Voltage - On State (Vtm) (Max): 2.95 V
Supplier Device Package: BG-T17240L-1
Current - On State (It (RMS)) (Max): 3600 A
Voltage - Off State: 8 kV
Produkt ist nicht verfügbar
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IRF7410TRPBF-1 IRF7410TRPBF-1 Infineon Technologies IRF7410TRPbF_10-16-14.pdf Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
Produkt ist nicht verfügbar
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BSL296SNH6327XTSA1 BSL296SNH6327XTSA1 Infineon Technologies BSL296SN.pdf Description: MOSFET N-CH 100V 1.4A TSOP-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
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ICE3B2065JFKLA1 ICE3B2065JFKLA1 Infineon Technologies Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 57 W
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IRFR2307ZTRLPBF IRFR2307ZTRLPBF Infineon Technologies irfr2307zpbf.pdf?fileId=5546d462533600a40153562d98be2074 Description: MOSFET N-CH 75V 42A DPAK
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 110W (Tc)
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TZ240N34KOFHPSA1 TZ240N34KOFHPSA1 Infineon Technologies Infineon-TZ240N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42fd8bf4e00 Description: SCR MODULE 3.4KV 700A MODULE
Voltage - Off State: 3.4 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 240 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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TZ240N36KOFS1HPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Part Status: Obsolete
Packaging: Tray
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TZ240N36KOFS2HPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Part Status: Obsolete
Packaging: Tray
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TZ240N32KOFHPSA1 Infineon Technologies TZ240N.pdf Description: SCR MODULE 3.2KV 700A MODULE
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IPD50N06S4L08ATMA2 IPD50N06S4L08ATMA2 Infineon Technologies INFNS14103-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
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CY7C1312KV18-300BZXI CY7C1312KV18-300BZXI Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Memory Organization: 1M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 300 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
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CY7C15632KV18-450BZXI CY7C15632KV18-450BZXI Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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IPD90R1K2C3ATMA2 IPD90R1K2C3ATMA2 Infineon Technologies Infineon-IPD90R1K2C3-DS-v02_00-en.pdf?fileId=db3a30433f12d084013f13d4a88e0220 Description: MOSFET N-CH 900V 5.1A TO252-3
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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BCR523UE6327 BCR523UE6327 Infineon Technologies INFNS16394-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Power - Max: 330mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SC74-6-1
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 1kOhms
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
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BCR523UE6327HTSA1 BCR523UE6327HTSA1 Infineon Technologies bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309 Description: TRANS 2NPN PREBIAS 0.33W SC74
Part Status: Last Time Buy
Supplier Device Package: PG-SC74-6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 1kOhms
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Power - Max: 330mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Bulk
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TLE4278GXUMA3 TLE4278GXUMA3 Infineon Technologies Infineon-TLE4278G-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8e7fcd1f9f Description: IC REG LIN 5V 200MA PG-DSO-14-30
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-30
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Part Status: Active
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 12 mA
Qualification: AEC-Q100
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TLE4278GXUMA3 TLE4278GXUMA3 Infineon Technologies Infineon-TLE4278G-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8e7fcd1f9f Description: IC REG LIN 5V 200MA PG-DSO-14-30
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-30
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Part Status: Active
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 12 mA
Qualification: AEC-Q100
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AUXTALR3915 Infineon Technologies Description: IC DISCRETE
Produkt ist nicht verfügbar
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BTS5562EAUMA1 BTS5562EAUMA1 Infineon Technologies BTS5562E.pdf Description: IC LED DRVR RGLTR SPI 24A 36DSO
Grade: Automotive
Part Status: Obsolete
Voltage - Supply (Max): 28V
Voltage - Supply (Min): 5.5V
Dimming: SPI
Supplier Device Package: PG-DSO-36-36
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): Yes
Current - Output / Channel: 24A
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Regulator
Number of Outputs: 5
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Bulk
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BTS5576G Infineon Technologies INFN-S-A0001051571-1.pdf?t.download=true&u=5oefqw Description: PERIPHERAL DRIVER, 5 DRIVER
Packaging: Bulk
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BTS5590G Infineon Technologies INFN-S-A0001051571-1.pdf?t.download=true&u=5oefqw Description: PERIPHERAL DRIVER, 5 DRIVER
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Supplier Device Package: PG-DSO-36-34
Ratio - Input:Output: 1:1
Current - Output (Max): 18A, 27A, 48A
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Voltage - Load: 5.5V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 22.8mOhm, 31.5mOhm, 81mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: Latched Driver
Interface: SPI
Number of Outputs: 5
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Features: Slew Rate Controlled
Packaging: Bulk
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BTS5572EAUMA1 BTS5572EAUMA1 Infineon Technologies BTS5572E.pdf Description: IC LED DRVR RGLTR SPI 24A 36DSO
Voltage - Supply (Max): 28V
Voltage - Supply (Min): 5.5V
Dimming: SPI
Supplier Device Package: PG-DSO-36-36
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): Yes
Current - Output / Channel: 24A
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Regulator
Number of Outputs: 5
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Bulk
Grade: Automotive
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IPD25CN10NGATMA1 IPD25CN10NGATMA1 Infineon Technologies Infineon-IPP26CN10N-DS-v01_09-en.pdf?fileId=db3a304412b407950112b42b420244aa Description: MOSFET N-CH 100V 35A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 39µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V
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IRSM516-076DA IRSM516-076DA Infineon Technologies IRSM506-076.pdf Description: IC HALF BRIDGE DRIVER 4A 23DIP
Part Status: Discontinued at Digi-Key
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 480V (Max)
Technology: IGBT
Current - Peak Output: 15A
Current - Output / Channel: 4A
Applications: AC Motors
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 32-PowerDIP Module, 23 Leads
Features: Bootstrap Circuit
Packaging: Tube
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IRSM516-076DA2 IRSM516-076DA2 Infineon Technologies IRSM506-076.pdf Description: IC HALF BRIDGE DRIVER 4A 23DIP
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Features: Bootstrap Circuit
Packaging: Tube
Part Status: Discontinued at Digi-Key
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIPA
Voltage - Load: 480V (Max)
Technology: IGBT
Current - Peak Output: 15A
Current - Output / Channel: 4A
Applications: AC Motors
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
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IRL6342PBF IRL6342PBF Infineon Technologies irl6342pbf.pdf?fileId=5546d462533600a40153565ffb7a2577 Description: MOSFET N-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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ICE2A380P2BKSA1 ICE2A380P2BKSA1 Infineon Technologies ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac Description: IC OFFLINE SW FLYBACK TO220-6
Packaging: Bulk
Package / Case: TO-220-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-TO220-6-47
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 111 W
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PMB8761V3.14 PMB8761V3.14 Infineon Technologies PMB7861.pdf?t.download=true&u=ovmfp3 Description: INFINEON PMB8761V3.14 TELECOM IC
Packaging: Bulk
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PSB7280FV3.1 Infineon Technologies PSB7280.pdf?t.download=true&u=ovmfp3 Description: JOINT AUDIO DECODER-ENCODER
Packaging: Bulk
Part Status: Active
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ETD420N22P60HPSA1 ETD420N22P60HPSA1 Infineon Technologies Infineon-DS_eTT420N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4d9cc03666 Description: SCR MODULE 2.2KV 700A MODULE
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 700 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 427 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 13400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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ETT420N22P60HPSA1 ETT420N22P60HPSA1 Infineon Technologies Infineon-DS_eTT420N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4d9cc03666 Description: THYR / DIODE MODULE DK
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 700 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 427 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 13400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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BSP296L6433 BSP296L6433 Infineon Technologies INFNS13387-1.pdf?t.download=true&u=5oefqw Description: SMALL-SIGNAL N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Power Dissipation (Max): 1.79W (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
auf Bestellung 6756 Stücke:
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BSP297L6327 BSP297L6327 Infineon Technologies INFNS13388-1.pdf?t.download=true&u=5oefqw Description: SMALL-SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
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BSP295L6327 BSP295L6327 Infineon Technologies INFNS16525-1.pdf?t.download=true&u=5oefqw description Description: SMALL-SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
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BGF148E6327XTSA1 Infineon Technologies BGF148_Rev1.9.2_4-2-14.pdf Description: IC INTERFACE PROTECTION TSNP14-2
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S6E2C29J0AGV2000A S6E2C29J0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1.5MB (1.5M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
Number of I/O: 152
Part Status: Active
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, I²S, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, Ethernet, I²C, LINbus, SD, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Produkt ist nicht verfügbar
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SIDC09D60E6X1SA1 Infineon Technologies SIDC09D60E6_L4303M.pdf?folderId=db3a304412b407950112b435faf1643e&fileId=db3a304412b407950112b435fb6e643f Description: DIODE STD 600V 20A SAWN ON FOIL
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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SIDC09D60E6 UNSAWN Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE STD 600V 20A SAWN ON FOIL
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFR3709ZTRLPBF irfr3709zpbf.pdf?fileId=5546d462533600a401535631a47a20c5
IRFR3709ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
Produkt ist nicht verfügbar
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BTN7960BAUMA1 fundamentals-of-power-semiconductors
BTN7960BAUMA1
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 8V-18V TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 47A
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-TO263-7-1
Motor Type - AC, DC: Brushed DC
Produkt ist nicht verfügbar
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BTS282ZDELCO INFNS13361-1.pdf?t.download=true&u=5oefqw
BTS282ZDELCO
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Drain to Source Voltage (Vdss): 49 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: P-TO220-7-3
Vgs(th) (Max) @ Id: 2V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-7 Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFS7430TRLPBF Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d
IRFS7430TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
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IRFS7430TRLPBF Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d
IRFS7430TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
auf Bestellung 1672 Stücke:
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3+8.16 EUR
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IPB65R660CFDAATMA1 INFN-S-A0003823031-1.pdf?t.download=true&u=5oefqw
IPB65R660CFDAATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
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5+5.09 EUR
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IPB65R660CFDATMA1 IPx65R660CFD.pdf
IPB65R660CFDATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
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7+3.28 EUR
10+2.96 EUR
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BAS1602VH6327XTSA1 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
BAS1602VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 80V 200MA PGSC792
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 1560 Stücke:
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AnzahlPrivatkunde
125+0.17 EUR
213+0.099 EUR
261+0.081 EUR
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BAS7002VH6327XTSA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7002VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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34+0.63 EUR
55+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
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BAT6202VH6327XTSA1 Infineon-BAT62-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017eb4959b1821f7
BAT6202VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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BAT6202VH6327XTSA1 Infineon-BAT62-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017eb4959b1821f7
BAT6202VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 72 Stücke:
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18+1.19 EUR
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BBY5602VH6327XTSA1 fundamentals-of-power-semiconductors
BBY5602VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 10V SNGL PG-SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2-1
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
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IPB80N08S207ATMA1 Infineon-IPP_B_I80N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426df983adf&ack=t
IPB80N08S207ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB80N08S207ATMA1 Infineon-IPP_B_I80N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426df983adf&ack=t
IPB80N08S207ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 389 Stücke:
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2+10.6 EUR
10+7.07 EUR
100+5.08 EUR
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IPD70N04S307ATMA1 INFNS11352-1.pdf?t.download=true&u=5oefqw
IPD70N04S307ATMA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFI7536GPBF irfi7536gpbf.pdf
IRFI7536GPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 86A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
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175+3.45 EUR
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TLE92623BQXV33XUMA1 Infineon-TLE9262-3BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc80160978ed9493954
TLE92623BQXV33XUMA1
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
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2500+3.96 EUR
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TLE92623BQXV33XUMA1 Infineon-TLE9262-3BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc80160978ed9493954
TLE92623BQXV33XUMA1
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
auf Bestellung 9019 Stücke:
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AnzahlPrivatkunde
3+7.31 EUR
10+5.51 EUR
25+5.07 EUR
100+4.57 EUR
250+4.34 EUR
500+4.31 EUR
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TLE92623BQXXUMA1 Infineon-TLE9262-3BQX-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609785aa013951
TLE92623BQXXUMA1
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
Produkt ist nicht verfügbar
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TLE92623BQXXUMA1 Infineon-TLE9262-3BQX-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609785aa013951
TLE92623BQXXUMA1
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
auf Bestellung 2120 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.47 EUR
10+5.66 EUR
25+5.2 EUR
100+4.7 EUR
250+4.46 EUR
500+4.32 EUR
1000+4.2 EUR
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IPB50R199CP INFNS15809-1.pdf?t.download=true&u=5oefqw
IPB50R199CP
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 17A TO263-3-2
Produkt ist nicht verfügbar
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IRFHM8334TRPBF-INF IRSDS19389-1.pdf?t.download=true&u=5oefqw
IRFHM8334TRPBF-INF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 13A/43A 8PQFN DL
Produkt ist nicht verfügbar
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T2563NH80TOHXOSA1 Infineon-T2563NH-DS-v11_00-en_de.pdf?fileId=db3a304412b407950112b430fab552bb
T2563NH80TOHXOSA1
Hersteller: Infineon Technologies
Description: SCR 8KV 3600A BG-T17240L-1
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: 120°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Current - On State (It (AV)) (Max): 3330 A
Voltage - On State (Vtm) (Max): 2.95 V
Supplier Device Package: BG-T17240L-1
Current - On State (It (RMS)) (Max): 3600 A
Voltage - Off State: 8 kV
Produkt ist nicht verfügbar
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IRF7410TRPBF-1 IRF7410TRPbF_10-16-14.pdf
IRF7410TRPBF-1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
Produkt ist nicht verfügbar
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BSL296SNH6327XTSA1 BSL296SN.pdf
BSL296SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.4A TSOP-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
auf Bestellung 108300 Stücke:
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AnzahlPrivatkunde
1011+0.55 EUR
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ICE3B2065JFKLA1 Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2
ICE3B2065JFKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 57 W
auf Bestellung 84000 Stücke:
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AnzahlPrivatkunde
162+3.39 EUR
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IRFR2307ZTRLPBF irfr2307zpbf.pdf?fileId=5546d462533600a40153562d98be2074
IRFR2307ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 110W (Tc)
auf Bestellung 7703 Stücke:
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5+4.4 EUR
10+2.83 EUR
100+1.93 EUR
500+1.54 EUR
1000+1.42 EUR
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TZ240N34KOFHPSA1 Infineon-TZ240N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42fd8bf4e00
TZ240N34KOFHPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 3.4KV 700A MODULE
Voltage - Off State: 3.4 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 240 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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TZ240N36KOFS1HPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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TZ240N36KOFS2HPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar
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TZ240N32KOFHPSA1 TZ240N.pdf
Hersteller: Infineon Technologies
Description: SCR MODULE 3.2KV 700A MODULE
Produkt ist nicht verfügbar
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IPD50N06S4L08ATMA2 INFNS14103-1.pdf?t.download=true&u=5oefqw
IPD50N06S4L08ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4488 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.62 EUR
10+2.3 EUR
50+1.74 EUR
100+1.55 EUR
500+1.23 EUR
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CY7C1312KV18-300BZXI download
CY7C1312KV18-300BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Memory Organization: 1M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 300 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 1 Stücke:
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1+21.49 EUR
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CY7C15632KV18-450BZXI download
CY7C15632KV18-450BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
auf Bestellung 365 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+216.79 EUR
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IPD90R1K2C3ATMA2 Infineon-IPD90R1K2C3-DS-v02_00-en.pdf?fileId=db3a30433f12d084013f13d4a88e0220
IPD90R1K2C3ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO252-3
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Produkt ist nicht verfügbar
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BCR523UE6327 INFNS16394-1.pdf?t.download=true&u=5oefqw
BCR523UE6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Power - Max: 330mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SC74-6-1
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 1kOhms
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
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BCR523UE6327HTSA1 bcr523series.pdf?folderId=db3a30431428a373011440769fd70304&fileId=db3a30431428a3730114407c929c0309
BCR523UE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.33W SC74
Part Status: Last Time Buy
Supplier Device Package: PG-SC74-6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 1kOhms
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Power - Max: 330mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Bulk
auf Bestellung 106000 Stücke:
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AnzahlPrivatkunde
2039+0.3 EUR
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TLE4278GXUMA3 Infineon-TLE4278G-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8e7fcd1f9f
TLE4278GXUMA3
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 200MA PG-DSO-14-30
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-30
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Part Status: Active
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 12 mA
Qualification: AEC-Q100
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2.09 EUR
5000+2.05 EUR
7500+2.02 EUR
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TLE4278GXUMA3 Infineon-TLE4278G-DS-v01_40-EN.pdf?fileId=5546d46258fc0bc101595f8e7fcd1f9f
TLE4278GXUMA3
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 200MA PG-DSO-14-30
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-30
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Part Status: Active
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 12 mA
Qualification: AEC-Q100
auf Bestellung 17639 Stücke:
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6+4.08 EUR
10+3.01 EUR
25+2.75 EUR
100+2.45 EUR
250+2.32 EUR
500+2.24 EUR
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AUXTALR3915
Hersteller: Infineon Technologies
Description: IC DISCRETE
Produkt ist nicht verfügbar
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BTS5562EAUMA1 BTS5562E.pdf
BTS5562EAUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR SPI 24A 36DSO
Grade: Automotive
Part Status: Obsolete
Voltage - Supply (Max): 28V
Voltage - Supply (Min): 5.5V
Dimming: SPI
Supplier Device Package: PG-DSO-36-36
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): Yes
Current - Output / Channel: 24A
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Regulator
Number of Outputs: 5
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Bulk
auf Bestellung 69000 Stücke:
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AnzahlPrivatkunde
94+6.22 EUR
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BTS5576G INFN-S-A0001051571-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: PERIPHERAL DRIVER, 5 DRIVER
Packaging: Bulk
auf Bestellung 1998 Stücke:
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AnzahlPrivatkunde
76+7.65 EUR
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BTS5590G INFN-S-A0001051571-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: PERIPHERAL DRIVER, 5 DRIVER
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Supplier Device Package: PG-DSO-36-34
Ratio - Input:Output: 1:1
Current - Output (Max): 18A, 27A, 48A
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Voltage - Load: 5.5V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 22.8mOhm, 31.5mOhm, 81mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: Latched Driver
Interface: SPI
Number of Outputs: 5
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Features: Slew Rate Controlled
Packaging: Bulk
auf Bestellung 1813 Stücke:
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AnzahlPrivatkunde
69+8.48 EUR
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BTS5572EAUMA1 BTS5572E.pdf
BTS5572EAUMA1
Hersteller: Infineon Technologies
Description: IC LED DRVR RGLTR SPI 24A 36DSO
Voltage - Supply (Max): 28V
Voltage - Supply (Min): 5.5V
Dimming: SPI
Supplier Device Package: PG-DSO-36-36
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): Yes
Current - Output / Channel: 24A
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Regulator
Number of Outputs: 5
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Bulk
Grade: Automotive
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IPD25CN10NGATMA1 Infineon-IPP26CN10N-DS-v01_09-en.pdf?fileId=db3a304412b407950112b42b420244aa
IPD25CN10NGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 39µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V
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7+3.14 EUR
11+1.99 EUR
100+1.33 EUR
500+1.05 EUR
1000+0.96 EUR
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IRSM516-076DA IRSM506-076.pdf
IRSM516-076DA
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4A 23DIP
Part Status: Discontinued at Digi-Key
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 480V (Max)
Technology: IGBT
Current - Peak Output: 15A
Current - Output / Channel: 4A
Applications: AC Motors
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 32-PowerDIP Module, 23 Leads
Features: Bootstrap Circuit
Packaging: Tube
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IRSM516-076DA2 IRSM506-076.pdf
IRSM516-076DA2
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4A 23DIP
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Features: Bootstrap Circuit
Packaging: Tube
Part Status: Discontinued at Digi-Key
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIPA
Voltage - Load: 480V (Max)
Technology: IGBT
Current - Peak Output: 15A
Current - Output / Channel: 4A
Applications: AC Motors
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
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IRL6342PBF irl6342pbf.pdf?fileId=5546d462533600a40153565ffb7a2577
IRL6342PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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ICE2A380P2BKSA1 ICE2xxx_Datasheet_v2.6(25Dec06).pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b418cbe626ac
ICE2A380P2BKSA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SW FLYBACK TO220-6
Packaging: Bulk
Package / Case: TO-220-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-TO220-6-47
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 111 W
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PMB8761V3.14 PMB7861.pdf?t.download=true&u=ovmfp3
PMB8761V3.14
Hersteller: Infineon Technologies
Description: INFINEON PMB8761V3.14 TELECOM IC
Packaging: Bulk
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PSB7280FV3.1 PSB7280.pdf?t.download=true&u=ovmfp3
Hersteller: Infineon Technologies
Description: JOINT AUDIO DECODER-ENCODER
Packaging: Bulk
Part Status: Active
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ETD420N22P60HPSA1 Infineon-DS_eTT420N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4d9cc03666
ETD420N22P60HPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 2.2KV 700A MODULE
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 700 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 427 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 13400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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ETT420N22P60HPSA1 Infineon-DS_eTT420N22P60-DS-v03_01-EN.pdf?fileId=5546d46266f85d6301670d4d9cc03666
ETT420N22P60HPSA1
Hersteller: Infineon Technologies
Description: THYR / DIODE MODULE DK
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 700 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 427 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 13400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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BSP296L6433 INFNS13387-1.pdf?t.download=true&u=5oefqw
BSP296L6433
Hersteller: Infineon Technologies
Description: SMALL-SIGNAL N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Power Dissipation (Max): 1.79W (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
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BSP297L6327 INFNS13388-1.pdf?t.download=true&u=5oefqw
BSP297L6327
Hersteller: Infineon Technologies
Description: SMALL-SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
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BSP295L6327 description INFNS16525-1.pdf?t.download=true&u=5oefqw
BSP295L6327
Hersteller: Infineon Technologies
Description: SMALL-SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
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BGF148E6327XTSA1 BGF148_Rev1.9.2_4-2-14.pdf
Hersteller: Infineon Technologies
Description: IC INTERFACE PROTECTION TSNP14-2
Produkt ist nicht verfügbar
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S6E2C29J0AGV2000A download
S6E2C29J0AGV2000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 192K x 8
Program Memory Size: 1.5MB (1.5M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP
Packaging: Tray
Number of I/O: 152
Part Status: Active
Supplier Device Package: 176-LQFP (24x24)
Peripherals: DMA, I²S, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, Ethernet, I²C, LINbus, SD, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 32x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
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SIDC09D60E6X1SA1 SIDC09D60E6_L4303M.pdf?folderId=db3a304412b407950112b435faf1643e&fileId=db3a304412b407950112b435fb6e643f
Hersteller: Infineon Technologies
Description: DIODE STD 600V 20A SAWN ON FOIL
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIDC09D60E6 UNSAWN fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: DIODE STD 600V 20A SAWN ON FOIL
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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