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BSZ018NE2LSATMA1 BSZ018NE2LSATMA1 Infineon Technologies BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc Description: MOSFET N-CH 25V 23A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V
auf Bestellung 5000 Stücke:
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5000+0.59 EUR
Mindestbestellmenge: 5000
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BSZ018NE2LSATMA1 BSZ018NE2LSATMA1 Infineon Technologies BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc Description: MOSFET N-CH 25V 23A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V
auf Bestellung 5670 Stücke:
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8+2.41 EUR
12+1.53 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.73 EUR
2000+0.72 EUR
Mindestbestellmenge: 8
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AUIRFS3207Z-INF AUIRFS3207Z-INF Infineon Technologies INFN-S-A0004165566-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
Produkt ist nicht verfügbar
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IPD90P04P405ATMA2 IPD90P04P405ATMA2 Infineon Technologies Infineon-IPD90P04P4-05-DataSheet-v01_02-EN.pdf?fileId=db3a304329a0f6ee0129dbba2b4d5c79 Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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2500+1.21 EUR
Mindestbestellmenge: 2500
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IPD90P04P405ATMA2 IPD90P04P405ATMA2 Infineon Technologies Infineon-IPD90P04P4-05-DataSheet-v01_02-EN.pdf?fileId=db3a304329a0f6ee0129dbba2b4d5c79 Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4652 Stücke:
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10+2.62 EUR
100+1.8 EUR
500+1.46 EUR
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BC807-25B5000 BC807-25B5000 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.5A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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8955+0.045 EUR
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BC807-25B5003 BC807-25B5003 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 147000 Stücke:
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8955+0.045 EUR
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BSO303SPH BSO303SPH Infineon Technologies INFNS16523-1.pdf?t.download=true&u=5oefqw Description: 7.2A, 30V, 0.021OHM, P-CHANNEL,
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
auf Bestellung 2561 Stücke:
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866+0.56 EUR
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BSO303SP BSO303SP Infineon Technologies INFNS11933-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
auf Bestellung 3363 Stücke:
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751+0.7 EUR
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BSO303SPNTMA1 BSO303SPNTMA1 Infineon Technologies BSO303SP_080102.pdf Description: MOSFET P-CH 30V 8.9A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.35W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1754 pF @ 25 V
Produkt ist nicht verfügbar
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PEB4265TV1.2 Infineon Technologies INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
auf Bestellung 269 Stücke:
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56+9.05 EUR
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ICE2PCS06GXUMA1 ICE2PCS06GXUMA1 Infineon Technologies ProductDatasheetICE2PCS06_v1.1+Mar2010.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a3043327f13e3013285ff4ecb2e77 Description: IC PFC CTRLR CCM 70KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 58kHz ~ 70kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
Produkt ist nicht verfügbar
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ICE2PCS06GXUMA1 ICE2PCS06GXUMA1 Infineon Technologies ProductDatasheetICE2PCS06_v1.1+Mar2010.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a3043327f13e3013285ff4ecb2e77 Description: IC PFC CTRLR CCM 70KHZ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 58kHz ~ 70kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
Produkt ist nicht verfügbar
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ICE2PCS03GXUMA1 ICE2PCS03GXUMA1 Infineon Technologies INFNS16598-1.pdf Description: IC PFC CTRLR CCM 100KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
Produkt ist nicht verfügbar
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ICE2PCS03GXUMA1 ICE2PCS03GXUMA1 Infineon Technologies INFNS16598-1.pdf Description: IC PFC CTRLR CCM 100KHZ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
auf Bestellung 2937 Stücke:
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11+1.6 EUR
16+1.15 EUR
25+1.04 EUR
100+0.92 EUR
250+0.86 EUR
500+0.82 EUR
1000+0.79 EUR
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ICE2PCS05GXUMA1 ICE2PCS05GXUMA1 Infineon Technologies INFNS16600-1.pdf?t.download=true&u=5oefqw Description: IC PFC CTRLR CCM ADJUSTABLE 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: Adjustable
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
auf Bestellung 3820 Stücke:
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13+1.43 EUR
18+1.02 EUR
25+0.92 EUR
100+0.81 EUR
250+0.76 EUR
500+0.73 EUR
1000+0.7 EUR
Mindestbestellmenge: 13
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PSB21525NV2.1-HSCXTE Infineon Technologies SIEMS00941-1.pdf?t.download=true&u=5oefqw Description: HSCX TE COMMS CONTROLLER
Packaging: Bulk
Type: Process, Temperature Controller
Part Status: Active
auf Bestellung 3560 Stücke:
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46+11.65 EUR
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IRS2452AM IRS2452AM Infineon Technologies Infineon-IRS2452AM-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a01584ee4f1f00713 Description: IC AMP CLASS D STEREO 32MLPQ
Features: Depop
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12V
Supplier Device Package: 32-MLPQ (7x7)
Part Status: Active
Produkt ist nicht verfügbar
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IRS2452AM IRS2452AM Infineon Technologies Infineon-IRS2452AM-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a01584ee4f1f00713 Description: IC AMP CLASS D STEREO 32MLPQ
Features: Depop
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12V
Supplier Device Package: 32-MLPQ (7x7)
Part Status: Active
auf Bestellung 4155 Stücke:
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2+10.23 EUR
10+7.86 EUR
25+7.27 EUR
100+6.63 EUR
250+6.32 EUR
500+6.13 EUR
1000+5.98 EUR
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IRG4PH50KDPBF-INF IRG4PH50KDPBF-INF Infineon Technologies Description: SHORT CIRCUIT RATED ULTRAFAST IG
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPB80N06S2L07ATMA3 IPB80N06S2L07ATMA3 Infineon Technologies INFNS09574-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 60A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB80N06S2L07ATMA3 IPB80N06S2L07ATMA3 Infineon Technologies INFNS09574-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 60A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IDV03S60C IDV03S60C Infineon Technologies INFNS14319-1.pdf?t.download=true&u=5oefqw Description: DIODE SIL CARB 600V 3A TO220-22
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 90pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A (DC)
Supplier Device Package: PG-TO220-2-22
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 1500 Stücke:
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270+1.79 EUR
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IDH04S60CAKSA1 IDH04S60CAKSA1 Infineon Technologies IDH04S60C.pdf Description: DIODE SIL CARB 600V 4A TO220-2-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 18279 Stücke:
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183+2.67 EUR
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IDV06S60C IDV06S60C Infineon Technologies INFNS13768-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
auf Bestellung 1034 Stücke:
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147+3.76 EUR
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IDB06S60CATMA2 IDB06S60CATMA2 Infineon Technologies IDB06S60C.pdf Description: DIODE SIL CARB 600V 6A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO263-3-2
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
auf Bestellung 38373 Stücke:
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127+3.97 EUR
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IDH10S60CAKSA1 IDH10S60CAKSA1 Infineon Technologies IDH10S60C.pdf Description: DIODE SIL CARB 600V 10A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 600 V
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IDT08S60C IDT08S60C Infineon Technologies INFNS12282-1.pdf?t.download=true&u=5oefqw Description: DIODE SIL CARB 600V 8A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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IDT10S60C IDT10S60C Infineon Technologies INFNS12285-1.pdf?t.download=true&u=5oefqw Description: DIODE SIL CARB 600V 10A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A (DC)
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 600 V
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IDT12S60C IDT12S60C Infineon Technologies INFNS12248-1.pdf?t.download=true&u=5oefqw Description: DIODE SIL CARB 600V 12A TO220-2
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IDH06S60C IDH06S60C Infineon Technologies INFNS19762-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE, SCHOTTKY
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PSB21521EV1.4-G PSB21521EV1.4-G Infineon Technologies Description: INCA-IP SOLUTION
Packaging: Bulk
Package / Case: 324-LBGA
Mounting Type: Surface Mount
Function: Single-Chip IP-Phone Solution
Supplier Device Package: PG-LBGA-324-3
Part Status: Active
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BCR142WH6327XTSA1 BCR142WH6327XTSA1 Infineon Technologies bcr142series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114400b292302b6 Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
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BCR142WH6327 BCR142WH6327 Infineon Technologies INFNS17183-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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BCR142E6327 BCR142E6327 Infineon Technologies INFNS11629-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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BCR 142F E6327 BCR 142F E6327 Infineon Technologies bcr142series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114400b292302b6 Description: TRANS PREBIAS NPN 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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BCR 142L3 E6327 BCR 142L3 E6327 Infineon Technologies BCR142%20%282006%29.pdf Description: TRANS PREBIAS NPN 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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BCR 142T E6327 BCR 142T E6327 Infineon Technologies BCR142%20%282006%29.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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CYF2072V33L-100BGXI CYF2072V33L-100BGXI Infineon Technologies CYF2018%2C36%2C72V.pdf Description: IC FIFO SYNC 2MX36 10NS 209FBGA
Packaging: Tray
Package / Case: 209-BGA
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 72M (2M x 36)
Operating Temperature: -40°C ~ 85°C
Data Rate: 100MHz
Access Time: 10ns
Supplier Device Package: 209-FBGA (14x22)
Bus Directional: Uni-Directional
Expansion Type: Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
auf Bestellung 16 Stücke:
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IPW65R099C6FKSA1 IPW65R099C6FKSA1 Infineon Technologies IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019 Description: MOSFET N-CH 650V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
Produkt ist nicht verfügbar
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ESD130B1W0201E6327XTSA1 ESD130B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD130-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c02811e9592e Description: TVS DIODE 5.5VWM 18.5VC WLL-2-1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 18.5V
Power - Peak Pulse: 27.5W
Power Line Protection: No
Part Status: Active
auf Bestellung 1090 Stücke:
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433+0.041 EUR
500+0.04 EUR
1000+0.039 EUR
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MB89535AP-G-1032-SHE1 Infineon Technologies Description: IC MCU 8BIT 16KB MROM 64DIP
Packaging: Bulk
Package / Case: 64-SDIP (0.750", 19.05mm)
Mounting Type: Through Hole
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-DIP
Part Status: Obsolete
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89202P-G-103-SH-CNE1 Infineon Technologies Description: IC MCU 8BIT 16KB MROM 32-SH-DIP
Packaging: Bulk
Package / Case: 32-SDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-SDIP
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRAMX30TP60A-INF Infineon Technologies IRSD-S-Z0000001500-1.pdf?t.download=true&u=5oefqw Description: AC MOTOR CONTROLLER, HYBRID, PZI
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 30 A
Voltage: 600 V
Produkt ist nicht verfügbar
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BSD816SNL6327 BSD816SNL6327 Infineon Technologies INFNS16725-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 3.7µA
Supplier Device Package: PG-SOT363-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Produkt ist nicht verfügbar
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BSD816SN L6327 BSD816SN L6327 Infineon Technologies INFNS16725-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 3.7µA
Supplier Device Package: PG-SOT363-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Produkt ist nicht verfügbar
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BSD816SNH6327 BSD816SNH6327 Infineon Technologies INFNS22455-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 20V 1.4A SOT363-6
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 3.7µA
Supplier Device Package: PG-SOT363-6
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Produkt ist nicht verfügbar
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CY7C1461KV33-133AXI CY7C1461KV33-133AXI Infineon Technologies Infineon-CY7C1461KV33_CY7C1463KV33_36-Mbit_(1_M_36_2_M_18)_Flow-Through_SRAM_with_NoBL_Architecture-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece7f0c490a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
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10+97.9 EUR
25+94.71 EUR
72+91.09 EUR
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S6SBP401AJ0SA1001 Infineon Technologies Infineon-S6SBP401AJ0SA1001_S6SBP401AM2SA100_Automotive_Evaluation_Board_Operation_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efb9814118a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_ Description: KIT S6SBP401AJ
Packaging: Box
Voltage - Output: 1.25V, 1.25V, 1.85V, 2.8V, 3.3V, 3.375V
Voltage - Input: 4.5V ~ 5.5V
Current - Output: 3A, 2A, 2A, 1A, 500mA, 200mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: S6BP401A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down with LDO
Outputs and Type: 6, Non-Isolated
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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PEF20550HV2.1 PEF20550HV2.1 Infineon Technologies Description: ELIC LINE CARD INTERFACE
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Function: Line Card Controller
Interface: ISDN, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 5V
Current - Supply: 15mA
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of Circuits: 1
auf Bestellung 559 Stücke:
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BSZ0905PNSATMA1 BSZ0905PNSATMA1 Infineon Technologies Infineon-BSZ0905PNS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0a527b0515c Description: MOSFET P-CH 30V 40A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 105µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V
Produkt ist nicht verfügbar
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BSZ0905PNSATMA1 BSZ0905PNSATMA1 Infineon Technologies Infineon-BSZ0905PNS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0a527b0515c Description: MOSFET P-CH 30V 40A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 105µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V
Produkt ist nicht verfügbar
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IPD50N06S409ATMA2 IPD50N06S409ATMA2 Infineon Technologies INFNS13307-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.5 EUR
12+1.58 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 8
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IPD50N06S2L13ATMA2 IPD50N06S2L13ATMA2 Infineon Technologies Infineon-IPD50N06S2L_13-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433e8e55e1a Description: MOSFET N-CH 55V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4576 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.31 EUR
10+2.13 EUR
100+1.44 EUR
500+1.15 EUR
1000+1.11 EUR
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BC846BWE6327 BC846BWE6327 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 65V 0.1A SOT-323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
auf Bestellung 724900 Stücke:
Lieferzeit 10-14 Tag (e)
8955+0.045 EUR
Mindestbestellmenge: 8955
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SPU03N60C3 SPU03N60C3 Infineon Technologies Infineon-SPD03N60C3-DS-v02_06-NA.pdf?fileId=db3a3043191a246301192907f3b27f4b Description: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
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MB89635PF-GT-255-BNDE1 Infineon Technologies Description: IC MCU 8BIT 16KB MROM 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: EBI/EMI, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Part Status: Obsolete
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRG4PC30KD IRG4PC30KD Infineon Technologies Infineon-IRG4PC30KD-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a401535643cb6d22c4 Description: IGBT 600V 28A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4PC30K IRG4PC30K Infineon Technologies irg4pc30k.pdf Description: IGBT 600V 28A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 360µJ (on), 510µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4PC30S IRG4PC30S Infineon Technologies Infineon-IRG4PC30S-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a401535643dbdd22c8 Description: IGBT 600V 34A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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BSZ018NE2LSATMA1 BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc
BSZ018NE2LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 23A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.59 EUR
Mindestbestellmenge: 5000
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BSZ018NE2LSATMA1 BSZ018NE2LS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432ee77f32012f072b132a57fc
BSZ018NE2LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 23A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 12 V
auf Bestellung 5670 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
12+1.53 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.73 EUR
2000+0.72 EUR
Mindestbestellmenge: 8
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AUIRFS3207Z-INF INFN-S-A0004165566-1.pdf?t.download=true&u=5oefqw
AUIRFS3207Z-INF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: D2PAK
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6920 pF @ 50 V
Produkt ist nicht verfügbar
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IPD90P04P405ATMA2 Infineon-IPD90P04P4-05-DataSheet-v01_02-EN.pdf?fileId=db3a304329a0f6ee0129dbba2b4d5c79
IPD90P04P405ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.21 EUR
Mindestbestellmenge: 2500
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IPD90P04P405ATMA2 Infineon-IPD90P04P4-05-DataSheet-v01_02-EN.pdf?fileId=db3a304329a0f6ee0129dbba2b4d5c79
IPD90P04P405ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4652 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
10+2.62 EUR
100+1.8 EUR
500+1.46 EUR
Mindestbestellmenge: 5
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BC807-25B5000 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC807-25B5000
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.5A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 1425000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.045 EUR
Mindestbestellmenge: 8955
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BC807-25B5003 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC807-25B5003
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.5A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 147000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.045 EUR
Mindestbestellmenge: 8955
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BSO303SPH INFNS16523-1.pdf?t.download=true&u=5oefqw
BSO303SPH
Hersteller: Infineon Technologies
Description: 7.2A, 30V, 0.021OHM, P-CHANNEL,
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
auf Bestellung 2561 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
866+0.56 EUR
Mindestbestellmenge: 866
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BSO303SP INFNS11933-1.pdf?t.download=true&u=5oefqw
BSO303SP
Hersteller: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
auf Bestellung 3363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
751+0.7 EUR
Mindestbestellmenge: 751
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BSO303SPNTMA1 BSO303SP_080102.pdf
BSO303SPNTMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 8.9A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.35W (Ta)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1754 pF @ 25 V
Produkt ist nicht verfügbar
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PEB4265TV1.2 INTL-S-A0006019977-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: DUSLIC DUAL CHANNEL SUBSCRIBER L
Packaging: Bulk
auf Bestellung 269 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+9.05 EUR
Mindestbestellmenge: 56
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ICE2PCS06GXUMA1 ProductDatasheetICE2PCS06_v1.1+Mar2010.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a3043327f13e3013285ff4ecb2e77
ICE2PCS06GXUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 70KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 58kHz ~ 70kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
Produkt ist nicht verfügbar
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ICE2PCS06GXUMA1 ProductDatasheetICE2PCS06_v1.1+Mar2010.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a3043327f13e3013285ff4ecb2e77
ICE2PCS06GXUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 70KHZ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 58kHz ~ 70kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
Produkt ist nicht verfügbar
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ICE2PCS03GXUMA1 INFNS16598-1.pdf
ICE2PCS03GXUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 100KHZ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
Produkt ist nicht verfügbar
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ICE2PCS03GXUMA1 INFNS16598-1.pdf
ICE2PCS03GXUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM 100KHZ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
auf Bestellung 2937 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
16+1.15 EUR
25+1.04 EUR
100+0.92 EUR
250+0.86 EUR
500+0.82 EUR
1000+0.79 EUR
Mindestbestellmenge: 11
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ICE2PCS05GXUMA1 INFNS16600-1.pdf?t.download=true&u=5oefqw
ICE2PCS05GXUMA1
Hersteller: Infineon Technologies
Description: IC PFC CTRLR CCM ADJUSTABLE 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 25V
Frequency - Switching: Adjustable
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8
Part Status: Active
Current - Startup: 450 µA
auf Bestellung 3820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
18+1.02 EUR
25+0.92 EUR
100+0.81 EUR
250+0.76 EUR
500+0.73 EUR
1000+0.7 EUR
Mindestbestellmenge: 13
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PSB21525NV2.1-HSCXTE SIEMS00941-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: HSCX TE COMMS CONTROLLER
Packaging: Bulk
Type: Process, Temperature Controller
Part Status: Active
auf Bestellung 3560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+11.65 EUR
Mindestbestellmenge: 46
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IRS2452AM Infineon-IRS2452AM-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a01584ee4f1f00713
IRS2452AM
Hersteller: Infineon Technologies
Description: IC AMP CLASS D STEREO 32MLPQ
Features: Depop
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12V
Supplier Device Package: 32-MLPQ (7x7)
Part Status: Active
Produkt ist nicht verfügbar
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IRS2452AM Infineon-IRS2452AM-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a01584ee4f1f00713
IRS2452AM
Hersteller: Infineon Technologies
Description: IC AMP CLASS D STEREO 32MLPQ
Features: Depop
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Output Type: 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class D
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 12V
Supplier Device Package: 32-MLPQ (7x7)
Part Status: Active
auf Bestellung 4155 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.23 EUR
10+7.86 EUR
25+7.27 EUR
100+6.63 EUR
250+6.32 EUR
500+6.13 EUR
1000+5.98 EUR
Mindestbestellmenge: 2
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IRG4PH50KDPBF-INF
IRG4PH50KDPBF-INF
Hersteller: Infineon Technologies
Description: SHORT CIRCUIT RATED ULTRAFAST IG
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPB80N06S2L07ATMA3 INFNS09574-1.pdf?t.download=true&u=5oefqw
IPB80N06S2L07ATMA3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 60A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPB80N06S2L07ATMA3 INFNS09574-1.pdf?t.download=true&u=5oefqw
IPB80N06S2L07ATMA3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 60A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 2V @ 150µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3160 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IDV03S60C INFNS14319-1.pdf?t.download=true&u=5oefqw
IDV03S60C
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 3A TO220-22
Packaging: Bulk
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 90pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A (DC)
Supplier Device Package: PG-TO220-2-22
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 3 A
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
270+1.79 EUR
Mindestbestellmenge: 270
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IDH04S60CAKSA1 IDH04S60C.pdf
IDH04S60CAKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 4A TO220-2-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 18279 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
183+2.67 EUR
Mindestbestellmenge: 183
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IDV06S60C INFNS13768-1.pdf?t.download=true&u=5oefqw
IDV06S60C
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
auf Bestellung 1034 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
147+3.76 EUR
Mindestbestellmenge: 147
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IDB06S60CATMA2 IDB06S60C.pdf
IDB06S60CATMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 6A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO263-3-2
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
auf Bestellung 38373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
127+3.97 EUR
Mindestbestellmenge: 127
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IDH10S60CAKSA1 IDH10S60C.pdf
IDH10S60CAKSA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 10A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 600 V
auf Bestellung 5810 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
75+6.58 EUR
Mindestbestellmenge: 75
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IDT08S60C INFNS12282-1.pdf?t.download=true&u=5oefqw
IDT08S60C
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 8A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 310pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 3514 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
98+4.94 EUR
Mindestbestellmenge: 98
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IDT10S60C INFNS12285-1.pdf?t.download=true&u=5oefqw
IDT10S60C
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 10A TO220-2
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A (DC)
Supplier Device Package: PG-TO220-2-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 600 V
auf Bestellung 1479 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
79+6.28 EUR
Mindestbestellmenge: 79
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IDT12S60C INFNS12248-1.pdf?t.download=true&u=5oefqw
IDT12S60C
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 12A TO220-2
auf Bestellung 786 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
71+7.05 EUR
Mindestbestellmenge: 71
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IDH06S60C INFNS19762-1.pdf?t.download=true&u=5oefqw
IDH06S60C
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Produkt ist nicht verfügbar
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PSB21521EV1.4-G
PSB21521EV1.4-G
Hersteller: Infineon Technologies
Description: INCA-IP SOLUTION
Packaging: Bulk
Package / Case: 324-LBGA
Mounting Type: Surface Mount
Function: Single-Chip IP-Phone Solution
Supplier Device Package: PG-LBGA-324-3
Part Status: Active
auf Bestellung 2898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+50.89 EUR
Mindestbestellmenge: 9
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BCR142WH6327XTSA1 bcr142series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114400b292302b6
BCR142WH6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 72194 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4486+0.11 EUR
Mindestbestellmenge: 4486
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BCR142WH6327 INFNS17183-1.pdf?t.download=true&u=5oefqw
BCR142WH6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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BCR142E6327 INFNS11629-1.pdf?t.download=true&u=5oefqw
BCR142E6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Produkt ist nicht verfügbar
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BCR 142F E6327 bcr142series.pdf?folderId=db3a30431400ef68011406f3ddb1012e&fileId=db3a30431428a3730114400b292302b6
BCR 142F E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSFP-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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BCR 142L3 E6327 BCR142%20%282006%29.pdf
BCR 142L3 E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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BCR 142T E6327 BCR142%20%282006%29.pdf
BCR 142T E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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CYF2072V33L-100BGXI CYF2018%2C36%2C72V.pdf
CYF2072V33L-100BGXI
Hersteller: Infineon Technologies
Description: IC FIFO SYNC 2MX36 10NS 209FBGA
Packaging: Tray
Package / Case: 209-BGA
Mounting Type: Surface Mount
Function: Synchronous
Memory Size: 72M (2M x 36)
Operating Temperature: -40°C ~ 85°C
Data Rate: 100MHz
Access Time: 10ns
Supplier Device Package: 209-FBGA (14x22)
Bus Directional: Uni-Directional
Expansion Type: Width
Programmable Flags Support: Yes
Retransmit Capability: Yes
FWFT Support: No
Voltage - Supply: 3 V ~ 3.6 V
DigiKey Programmable: Not Verified
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1149.72 EUR
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IPW65R099C6FKSA1 IPA65R099C6.pdf?folderId=db3a3043163797a6011637d4bae7003b&fileId=db3a3043341f67a1013440dbd0a55019
IPW65R099C6FKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 12.8A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: PG-TO247-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2780 pF @ 100 V
Produkt ist nicht verfügbar
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ESD130B1W0201E6327XTSA1 Infineon-ESD130-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d46255a50e820155c02811e9592e
ESD130B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 18.5VC WLL-2-1
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: WLL-2-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 18.5V
Power - Peak Pulse: 27.5W
Power Line Protection: No
Part Status: Active
auf Bestellung 1090 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
233+0.076 EUR
433+0.041 EUR
500+0.04 EUR
1000+0.039 EUR
Mindestbestellmenge: 112
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MB89535AP-G-1032-SHE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 64DIP
Packaging: Bulk
Package / Case: 64-SDIP (0.750", 19.05mm)
Mounting Type: Through Hole
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-DIP
Part Status: Obsolete
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89202P-G-103-SH-CNE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 32-SH-DIP
Packaging: Bulk
Package / Case: 32-SDIP (0.400", 10.16mm)
Mounting Type: Through Hole
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-SDIP
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRAMX30TP60A-INF IRSD-S-Z0000001500-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: AC MOTOR CONTROLLER, HYBRID, PZI
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 30 A
Voltage: 600 V
Produkt ist nicht verfügbar
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BSD816SNL6327 INFNS16725-1.pdf?t.download=true&u=5oefqw
BSD816SNL6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 3.7µA
Supplier Device Package: PG-SOT363-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Produkt ist nicht verfügbar
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BSD816SN L6327 INFNS16725-1.pdf?t.download=true&u=5oefqw
BSD816SN L6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 3.7µA
Supplier Device Package: PG-SOT363-6-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Produkt ist nicht verfügbar
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BSD816SNH6327 INFNS22455-1.pdf?t.download=true&u=5oefqw
BSD816SNH6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 1.4A SOT363-6
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 3.7µA
Supplier Device Package: PG-SOT363-6
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Produkt ist nicht verfügbar
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CY7C1461KV33-133AXI Infineon-CY7C1461KV33_CY7C1463KV33_36-Mbit_(1_M_36_2_M_18)_Flow-Through_SRAM_with_NoBL_Architecture-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece7f0c490a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1461KV33-133AXI
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 1M x 36
DigiKey Programmable: Not Verified
auf Bestellung 132 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+106.08 EUR
10+97.9 EUR
25+94.71 EUR
72+91.09 EUR
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S6SBP401AJ0SA1001 Infineon-S6SBP401AJ0SA1001_S6SBP401AM2SA100_Automotive_Evaluation_Board_Operation_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0efb9814118a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_
Hersteller: Infineon Technologies
Description: KIT S6SBP401AJ
Packaging: Box
Voltage - Output: 1.25V, 1.25V, 1.85V, 2.8V, 3.3V, 3.375V
Voltage - Input: 4.5V ~ 5.5V
Current - Output: 3A, 2A, 2A, 1A, 500mA, 200mA
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: S6BP401A
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down with LDO
Outputs and Type: 6, Non-Isolated
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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PEF20550HV2.1
PEF20550HV2.1
Hersteller: Infineon Technologies
Description: ELIC LINE CARD INTERFACE
Packaging: Bulk
Package / Case: 80-QFP
Mounting Type: Surface Mount
Function: Line Card Controller
Interface: ISDN, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 5V
Current - Supply: 15mA
Supplier Device Package: P-MQFP-80-1
Part Status: Active
Number of Circuits: 1
auf Bestellung 559 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+62.19 EUR
Mindestbestellmenge: 7
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BSZ0905PNSATMA1 Infineon-BSZ0905PNS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0a527b0515c
BSZ0905PNSATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 40A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 105µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V
Produkt ist nicht verfügbar
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BSZ0905PNSATMA1 Infineon-BSZ0905PNS-DataSheet-v02_00-EN.pdf?fileId=5546d4626fc1ce0b016ff0a527b0515c
BSZ0905PNSATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 40A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 105µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3190 pF @ 15 V
Produkt ist nicht verfügbar
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IPD50N06S409ATMA2 INFNS13307-1.pdf?t.download=true&u=5oefqw
IPD50N06S409ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 34µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3785 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
12+1.58 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
Mindestbestellmenge: 8
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IPD50N06S2L13ATMA2 Infineon-IPD50N06S2L_13-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433e8e55e1a
IPD50N06S2L13ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.7mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4576 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.31 EUR
10+2.13 EUR
100+1.44 EUR
500+1.15 EUR
1000+1.11 EUR
Mindestbestellmenge: 6
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BC846BWE6327 INFNS14907-1.pdf?t.download=true&u=5oefqw
BC846BWE6327
Hersteller: Infineon Technologies
Description: TRANS NPN 65V 0.1A SOT-323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
auf Bestellung 724900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.045 EUR
Mindestbestellmenge: 8955
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SPU03N60C3 Infineon-SPD03N60C3-DS-v02_06-NA.pdf?fileId=db3a3043191a246301192907f3b27f4b
SPU03N60C3
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Produkt ist nicht verfügbar
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MB89635PF-GT-255-BNDE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: EBI/EMI, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Part Status: Obsolete
Number of I/O: 53
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRG4PC30KD Infineon-IRG4PC30KD-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a401535643cb6d22c4
IRG4PC30KD
Hersteller: Infineon Technologies
Description: IGBT 600V 28A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4PC30K irg4pc30k.pdf
IRG4PC30K
Hersteller: Infineon Technologies
Description: IGBT 600V 28A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 360µJ (on), 510µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IRG4PC30S Infineon-IRG4PC30S-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a401535643dbdd22c8
IRG4PC30S
Hersteller: Infineon Technologies
Description: IGBT 600V 34A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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