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IRL2203NPBF-INF IRL2203NPBF-INF Infineon Technologies Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Produkt ist nicht verfügbar
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BAS70-04TE6327 BAS70-04TE6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY
Packaging: Bulk
Part Status: Active
auf Bestellung 33000 Stücke:
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7059+0.061 EUR
Mindestbestellmenge: 7059
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BB640E7907 BB640E7907 Infineon Technologies INFNS15423-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 3.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C2/C25
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 16.6
Produkt ist nicht verfügbar
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BB640 BB640 Infineon Technologies INFNS16374-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SKW15N60 SKW15N60 Infineon Technologies INFNS27342-1.pdf?t.download=true&u=5oefqw Description: IGBT, 31A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 279 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 300µJ (on), 270µJ (off)
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
Produkt ist nicht verfügbar
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IR25602SPBF-INF IR25602SPBF-INF Infineon Technologies Description: IR25602 - HALF-BRIDGE DRIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAS40-60B5000 BAS40-60B5000 Infineon Technologies Description: RECTIFIER DIODE, SCHOTTKY
Produkt ist nicht verfügbar
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BSZ065N06LS5ATMA1 BSZ065N06LS5ATMA1 Infineon Technologies Infineon-BSZ065N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e55f60164817 Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
auf Bestellung 5000 Stücke:
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BSZ065N06LS5ATMA1 BSZ065N06LS5ATMA1 Infineon Technologies Infineon-BSZ065N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e55f60164817 Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
auf Bestellung 5168 Stücke:
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100+1.07 EUR
500+0.84 EUR
1000+0.77 EUR
2000+0.76 EUR
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BSC065N06LS5ATMA1 BSC065N06LS5ATMA1 Infineon Technologies Infineon-BSC065N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5a9ad087b39 Description: MOSFET N-CHANNEL 60V 64A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
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BSC065N06LS5ATMA1 BSC065N06LS5ATMA1 Infineon Technologies Infineon-BSC065N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5a9ad087b39 Description: MOSFET N-CHANNEL 60V 64A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
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10+1.88 EUR
100+1.27 EUR
500+1.01 EUR
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IPB065N06LG IPB065N06LG Infineon Technologies INFNS16294-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 80A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V
Produkt ist nicht verfügbar
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BC817-40B5000 BC817-40B5000 Infineon Technologies INFNS12118-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR TRANSISTOR TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE49681KXTSA1 TLE49681KXTSA1 Infineon Technologies Infineon-TLE4968_1K-DS-v01_00-en.pdf?fileId=db3a3043397219b6013977a3fb29541c Description: MAGNETIC SWITCH BIPOLAR SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
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TLE49681KXTSA1 TLE49681KXTSA1 Infineon Technologies Infineon-TLE4968_1K-DS-v01_00-en.pdf?fileId=db3a3043397219b6013977a3fb29541c Description: MAGNETIC SWITCH BIPOLAR SC59
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
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100+1 EUR
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SGW50N60HSFKSA1 SGW50N60HSFKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT NPT 600V 100A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 47ns/310ns
Switching Energy: 1.96mJ
Test Condition: 400V, 50A, 6.8Ohm, 15V
Gate Charge: 179 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 416 W
auf Bestellung 1870 Stücke:
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84+5.33 EUR
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BSC8899N03MS BSC8899N03MS Infineon Technologies INFNS15760-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 4952 Stücke:
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SGD02N60 SGD02N60 Infineon Technologies INFNS10941-1.pdf?t.download=true&u=5oefqw Description: IGBT, 6A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO252-3-11
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 36µJ (on), 28µJ (off)
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
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IGC27T120T8LX1SA2 Infineon Technologies Infineon-IGC27T120T8L_L7643V-DS-v01_01-en.pdf?fileId=db3a3043382e8373013832779de34b60 Description: IGBT 1200V 25A DIE
Produkt ist nicht verfügbar
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IGT60R070D1ATMA1 IGT60R070D1ATMA1 Infineon Technologies Infineon-IGT60R070D1-DS-v02_01-EN.pdf?fileId=5546d46265f064ff016686028dd56526 Description: GANFET N-CH 600V 31A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Produkt ist nicht verfügbar
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IR21571PBF IR21571PBF Infineon Technologies ir21571.pdf Description: IC BALLAST CNTRL 50.5KHZ 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 45.5kHz ~ 50.5kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.5V ~ 16.5V
Supplier Device Package: 16-DIP
Dimming: No
Part Status: Obsolete
Current - Supply: 5.5 mA
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PMB7720HV1.458PCC Infineon Technologies Description: PMB7720HV DECT IC
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SAK-XC2236N-40F80LAA SAK-XC2236N-40F80LAA Infineon Technologies INFNS15642-1.pdf?t.download=true&u=5oefqw Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAK-XC2236N-40F80L AA Infineon Technologies INFNS15642-1.pdf?t.download=true&u=5oefqw Description: IC MCU 16/32B 320KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XC2236N-40F66L AB SAF-XC2236N-40F66L AB Infineon Technologies XC223xN_V1.5_2-7-13.pdf Description: IC MCU 16/32B 320KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Obsolete
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC2236N40F66LAAFXUMA1 XC2236N40F66LAAFXUMA1 Infineon Technologies XC223xN_V1.5_2-7-13.pdf Description: IC MCU 16/32B 320KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Obsolete
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SGP20N60XKSA1 SGP20N60XKSA1 Infineon Technologies SGx20N60.pdf Description: IGBT NPT 600V 40A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
auf Bestellung 5130 Stücke:
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149+2.99 EUR
Mindestbestellmenge: 149
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V29F040B-150JC Infineon Technologies Description: IC MEMORY NOR
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ICE5QR2270AZXKLA1-ND Infineon Technologies Infineon-ICE5QRxxxxAx-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1eaab111c Description: IC OFFLINE SWITCH QUASI RESONANT
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7-6
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Power (Watts): 41 W
Produkt ist nicht verfügbar
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ICE5QR4780BGXUMA1 ICE5QR4780BGXUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 28 W
Produkt ist nicht verfügbar
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ICE5QR4780BGXUMA1 ICE5QR4780BGXUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 28 W
auf Bestellung 2425 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.06 EUR
10+2.25 EUR
25+2.05 EUR
100+1.82 EUR
250+1.72 EUR
500+1.65 EUR
1000+1.6 EUR
Mindestbestellmenge: 6
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ICE5QR0680BGXUMA1 ICE5QR0680BGXUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 77 W
Produkt ist nicht verfügbar
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ICE5QR0680BGXUMA1 ICE5QR0680BGXUMA1 Infineon Technologies Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 77 W
Produkt ist nicht verfügbar
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ICE5QSBGXUMA1 ICE5QSBGXUMA1 Infineon Technologies Infineon-ICE5QSBG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fecf213b3 Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 109 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.05 EUR
Mindestbestellmenge: 2500
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ICE5QSBGXUMA1 ICE5QSBGXUMA1 Infineon Technologies Infineon-ICE5QSBG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fecf213b3 Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 109 W
auf Bestellung 3459 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
12+1.56 EUR
25+1.41 EUR
100+1.25 EUR
250+1.17 EUR
500+1.13 EUR
1000+1.09 EUR
Mindestbestellmenge: 9
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BCW67BE6327 BCW67BE6327 Infineon Technologies INFNS11571-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
5495+0.088 EUR
Mindestbestellmenge: 5495
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BCW67BE6327HTSA1 BCW67BE6327HTSA1 Infineon Technologies bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e Description: TRANS PNP 32V 0.8A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 388951 Stücke:
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4508+0.11 EUR
Mindestbestellmenge: 4508
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BCW67C BCW67C Infineon Technologies INFNS17213-1.pdf?t.download=true&u=5oefqw Description: TRANS 32V 0.8A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 176800 Stücke:
Lieferzeit 10-14 Tag (e)
8510+0.065 EUR
Mindestbestellmenge: 8510
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BCW67AE6327 BCW67AE6327 Infineon Technologies INFNS11571-1.pdf?t.download=true&u=5oefqw Description: TRANS 32V 0.8A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
8510+0.065 EUR
Mindestbestellmenge: 8510
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STK14C88-5C45M STK14C88-5C45M Infineon Technologies DS_428_STK14C88.pdf Description: IC NVSRAM 256KBIT PAR 32CDIP
Packaging: Bulk
Package / Case: 32-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-CDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 134 Stücke:
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2EDN8523RXUMA1 2EDN8523RXUMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XC164CM-16F40FBA SAF-XC164CM-16F40FBA Infineon Technologies INFNS10522-1.pdf?t.download=true&u=5oefqw Description: LEGACY 16 BIT FLASH MICROCONTROL
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, CANbus, SPI, SSC, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPS70R1K4CEAKMA1 IPS70R1K4CEAKMA1 Infineon Technologies Infineon-IPD70R1K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a2a2125c7af1 Description: MOSFET N-CH 700V 5.4A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Produkt ist nicht verfügbar
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IPS7071GTRPBF Infineon Technologies IPS7071GPbF_6-24-07.pdf Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Produkt ist nicht verfügbar
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AUIPS7121R AUIPS7121R Infineon Technologies auips7121.pdf?fileId=5546d462533600a4015355a7d1721328 Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 24mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Produkt ist nicht verfügbar
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BAW 79D E6327 BAW 79D E6327 Infineon Technologies INFNS10746-1.pdf?t.download=true&u=5oefqw Description: SWITCHING AND RECTIFIER DIODES
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 1A (DC)
Supplier Device Package: PG-SOT89
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 4500 Stücke:
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2597+0.21 EUR
Mindestbestellmenge: 2597
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PEF2026T-PV1.1 Infineon Technologies Description: ISDN HIGH VOLTAGE POWER CONTROLL
Packaging: Bulk
Part Status: Active
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
47+9.77 EUR
Mindestbestellmenge: 47
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AUIRFR5305TR AUIRFR5305TR Infineon Technologies auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494 Description: MOSFET P-CH 55V 31A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFR5305TR AUIRFR5305TR Infineon Technologies auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494 Description: MOSFET P-CH 55V 31A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 521 Stücke:
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4+5.46 EUR
10+3.57 EUR
100+2.5 EUR
500+2.04 EUR
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TLE4935LE6433HAXA1 Infineon Technologies Description: TLE4935L - HALL EFFECT SWITCHE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPI80N06S2L11AKSA2 IPI80N06S2L11AKSA2 Infineon Technologies IPx80N06S2L-11.pdf Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
auf Bestellung 40500 Stücke:
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214+2.09 EUR
Mindestbestellmenge: 214
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IPB80N06S2LH5ATMA4 IPB80N06S2LH5ATMA4 Infineon Technologies IPB%2CIPP80N06S2L-H5.pdf Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2406 Stücke:
Lieferzeit 10-14 Tag (e)
157+2.85 EUR
Mindestbestellmenge: 157
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IPI80N06S2L05AKSA2 IPI80N06S2L05AKSA2 Infineon Technologies IPx80N06S2L-05.pdf Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
auf Bestellung 500 Stücke:
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138+3.24 EUR
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IPB17N25S3100ATMA1 IPB17N25S3100ATMA1 Infineon Technologies Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Description: MOSFET N-CH 250V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 54µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.5 EUR
2000+1.42 EUR
Mindestbestellmenge: 1000
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IPB17N25S3100ATMA1 IPB17N25S3100ATMA1 Infineon Technologies Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b Description: MOSFET N-CH 250V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 54µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 60951 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.59 EUR
10+2.98 EUR
100+2.06 EUR
500+1.73 EUR
Mindestbestellmenge: 4
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BSC882N03LSG Infineon Technologies INFNS16215-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V
Produkt ist nicht verfügbar
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BSC882N03LS G BSC882N03LS G Infineon Technologies INFNS16215-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V
Produkt ist nicht verfügbar
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BSC882N03MSG BSC882N03MSG Infineon Technologies INFNS16215-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 23996 Stücke:
Lieferzeit 10-14 Tag (e)
577+0.87 EUR
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EVAL600W12VLLCC7DTOBO1 EVAL600W12VLLCC7DTOBO1 Infineon Technologies Description: EVAL BOARD FOR ICE2QR2280Z
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 350V ~ 410V
Current - Output: 50A
Frequency - Switching: 150kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2QR2280Z
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 600W
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+772.22 EUR
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SPA11N65C3 SPA11N65C3 Infineon Technologies Infineon-SPP_A_I11N65C3-DS-v02_91-en.pdf?fileId=db3a3043163797a6011637d98e5e0049 Description: MOSFET N-CH 650V 11A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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IRL2203NPBF-INF
IRL2203NPBF-INF
Hersteller: Infineon Technologies
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Produkt ist nicht verfügbar
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BAS70-04TE6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70-04TE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY
Packaging: Bulk
Part Status: Active
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7059+0.061 EUR
Mindestbestellmenge: 7059
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BB640E7907 INFNS15423-1.pdf?t.download=true&u=5oefqw
BB640E7907
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 3.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C2/C25
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 16.6
Produkt ist nicht verfügbar
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BB640 INFNS16374-1.pdf?t.download=true&u=5oefqw
BB640
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SKW15N60 INFNS27342-1.pdf?t.download=true&u=5oefqw
SKW15N60
Hersteller: Infineon Technologies
Description: IGBT, 31A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 279 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 300µJ (on), 270µJ (off)
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
Produkt ist nicht verfügbar
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IR25602SPBF-INF
IR25602SPBF-INF
Hersteller: Infineon Technologies
Description: IR25602 - HALF-BRIDGE DRIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BAS40-60B5000
BAS40-60B5000
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Produkt ist nicht verfügbar
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BSZ065N06LS5ATMA1 Infineon-BSZ065N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e55f60164817
BSZ065N06LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.62 EUR
Mindestbestellmenge: 5000
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BSZ065N06LS5ATMA1 Infineon-BSZ065N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e55f60164817
BSZ065N06LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
auf Bestellung 5168 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
12+1.6 EUR
100+1.07 EUR
500+0.84 EUR
1000+0.77 EUR
2000+0.76 EUR
Mindestbestellmenge: 7
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BSC065N06LS5ATMA1 Infineon-BSC065N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5a9ad087b39
BSC065N06LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 60V 64A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.77 EUR
Mindestbestellmenge: 5000
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BSC065N06LS5ATMA1 Infineon-BSC065N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5a9ad087b39
BSC065N06LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CHANNEL 60V 64A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
auf Bestellung 18694 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+1.88 EUR
100+1.27 EUR
500+1.01 EUR
1000+0.95 EUR
Mindestbestellmenge: 6
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IPB065N06LG INFNS16294-1.pdf?t.download=true&u=5oefqw
IPB065N06LG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 80A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V
Produkt ist nicht verfügbar
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BC817-40B5000 INFNS12118-1.pdf?t.download=true&u=5oefqw
BC817-40B5000
Hersteller: Infineon Technologies
Description: BIPOLAR TRANSISTOR TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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TLE49681KXTSA1 Infineon-TLE4968_1K-DS-v01_00-en.pdf?fileId=db3a3043397219b6013977a3fb29541c
TLE49681KXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR SC59
Packaging: Tape & Reel (TR)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.72 EUR
Mindestbestellmenge: 3000
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TLE49681KXTSA1 Infineon-TLE4968_1K-DS-v01_00-en.pdf?fileId=db3a3043397219b6013977a3fb29541c
TLE49681KXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR SC59
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
auf Bestellung 8777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
13+1.36 EUR
25+1.09 EUR
100+1 EUR
500+0.84 EUR
1000+0.75 EUR
Mindestbestellmenge: 10
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SGW50N60HSFKSA1 fundamentals-of-power-semiconductors
SGW50N60HSFKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 100A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 47ns/310ns
Switching Energy: 1.96mJ
Test Condition: 400V, 50A, 6.8Ohm, 15V
Gate Charge: 179 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 416 W
auf Bestellung 1870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+5.33 EUR
Mindestbestellmenge: 84
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BSC8899N03MS INFNS15760-1.pdf?t.download=true&u=5oefqw
BSC8899N03MS
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
auf Bestellung 4952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1039+0.48 EUR
Mindestbestellmenge: 1039
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SGD02N60 INFNS10941-1.pdf?t.download=true&u=5oefqw
SGD02N60
Hersteller: Infineon Technologies
Description: IGBT, 6A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO252-3-11
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 36µJ (on), 28µJ (off)
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
465+1.04 EUR
Mindestbestellmenge: 465
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IGC27T120T8LX1SA2 Infineon-IGC27T120T8L_L7643V-DS-v01_01-en.pdf?fileId=db3a3043382e8373013832779de34b60
Hersteller: Infineon Technologies
Description: IGBT 1200V 25A DIE
Produkt ist nicht verfügbar
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IGT60R070D1ATMA1 Infineon-IGT60R070D1-DS-v02_01-EN.pdf?fileId=5546d46265f064ff016686028dd56526
IGT60R070D1ATMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 600V 31A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Produkt ist nicht verfügbar
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IR21571PBF ir21571.pdf
IR21571PBF
Hersteller: Infineon Technologies
Description: IC BALLAST CNTRL 50.5KHZ 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 45.5kHz ~ 50.5kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.5V ~ 16.5V
Supplier Device Package: 16-DIP
Dimming: No
Part Status: Obsolete
Current - Supply: 5.5 mA
auf Bestellung 157341 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
127+3.56 EUR
Mindestbestellmenge: 127
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PMB7720HV1.458PCC
Hersteller: Infineon Technologies
Description: PMB7720HV DECT IC
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SAK-XC2236N-40F80LAA INFNS15642-1.pdf?t.download=true&u=5oefqw
SAK-XC2236N-40F80LAA
Hersteller: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAK-XC2236N-40F80L AA INFNS15642-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XC2236N-40F66L AB XC223xN_V1.5_2-7-13.pdf
SAF-XC2236N-40F66L AB
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Obsolete
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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XC2236N40F66LAAFXUMA1 XC223xN_V1.5_2-7-13.pdf
XC2236N40F66LAAFXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Obsolete
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SGP20N60XKSA1 SGx20N60.pdf
SGP20N60XKSA1
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 40A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
auf Bestellung 5130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
149+2.99 EUR
Mindestbestellmenge: 149
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V29F040B-150JC
Hersteller: Infineon Technologies
Description: IC MEMORY NOR
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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ICE5QR2270AZXKLA1-ND Infineon-ICE5QRxxxxAx-DS-v02_00-EN.pdf?fileId=5546d46259d9a4bf015a4af1eaab111c
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH QUASI RESONANT
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7-6
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Power (Watts): 41 W
Produkt ist nicht verfügbar
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ICE5QR4780BGXUMA1 Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad
ICE5QR4780BGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 28 W
Produkt ist nicht verfügbar
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ICE5QR4780BGXUMA1 Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad
ICE5QR4780BGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 28 W
auf Bestellung 2425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.06 EUR
10+2.25 EUR
25+2.05 EUR
100+1.82 EUR
250+1.72 EUR
500+1.65 EUR
1000+1.6 EUR
Mindestbestellmenge: 6
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ICE5QR0680BGXUMA1 Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad
ICE5QR0680BGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 77 W
Produkt ist nicht verfügbar
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ICE5QR0680BGXUMA1 Infineon-ICE5QRxx80BG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fe42513ad
ICE5QR0680BGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 77 W
Produkt ist nicht verfügbar
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ICE5QSBGXUMA1 Infineon-ICE5QSBG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fecf213b3
ICE5QSBGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 109 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.05 EUR
Mindestbestellmenge: 2500
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ICE5QSBGXUMA1 Infineon-ICE5QSBG-DataSheet-v02_10-EN.pdf?fileId=5546d462700c0ae601707f2fecf213b3
ICE5QSBGXUMA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 109 W
auf Bestellung 3459 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
12+1.56 EUR
25+1.41 EUR
100+1.25 EUR
250+1.17 EUR
500+1.13 EUR
1000+1.09 EUR
Mindestbestellmenge: 9
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BCW67BE6327 INFNS11571-1.pdf?t.download=true&u=5oefqw
BCW67BE6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5495+0.088 EUR
Mindestbestellmenge: 5495
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BCW67BE6327HTSA1 bcw67_bcw68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ad64a2033e
BCW67BE6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PNP 32V 0.8A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
auf Bestellung 388951 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4508+0.11 EUR
Mindestbestellmenge: 4508
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BCW67C INFNS17213-1.pdf?t.download=true&u=5oefqw
BCW67C
Hersteller: Infineon Technologies
Description: TRANS 32V 0.8A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 176800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8510+0.065 EUR
Mindestbestellmenge: 8510
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BCW67AE6327 INFNS11571-1.pdf?t.download=true&u=5oefqw
BCW67AE6327
Hersteller: Infineon Technologies
Description: TRANS 32V 0.8A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8510+0.065 EUR
Mindestbestellmenge: 8510
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STK14C88-5C45M DS_428_STK14C88.pdf
STK14C88-5C45M
Hersteller: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32CDIP
Packaging: Bulk
Package / Case: 32-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-CDIP
Part Status: Obsolete
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 134 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3042.12 EUR
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2EDN8523RXUMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8523RXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SAF-XC164CM-16F40FBA INFNS10522-1.pdf?t.download=true&u=5oefqw
SAF-XC164CM-16F40FBA
Hersteller: Infineon Technologies
Description: LEGACY 16 BIT FLASH MICROCONTROL
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: ASC, CANbus, SPI, SSC, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Part Status: Active
Number of I/O: 47
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPS70R1K4CEAKMA1 Infineon-IPD70R1K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a2a2125c7af1
IPS70R1K4CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 5.4A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Produkt ist nicht verfügbar
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IPS7071GTRPBF IPS7071GPbF_6-24-07.pdf
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 80mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.5A
Ratio - Input:Output: 1:1
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
Produkt ist nicht verfügbar
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AUIPS7121R auips7121.pdf?fileId=5546d462533600a4015355a7d1721328
AUIPS7121R
Hersteller: Infineon Technologies
Description: IC PWR DRIVER N-CHANNEL 1:1 DPAK
Packaging: Tube
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C
Output Configuration: High Side
Rds On (Typ): 24mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Produkt ist nicht verfügbar
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BAW 79D E6327 INFNS10746-1.pdf?t.download=true&u=5oefqw
BAW 79D E6327
Hersteller: Infineon Technologies
Description: SWITCHING AND RECTIFIER DIODES
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1 µs
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 1A (DC)
Supplier Device Package: PG-SOT89
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2597+0.21 EUR
Mindestbestellmenge: 2597
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PEF2026T-PV1.1
Hersteller: Infineon Technologies
Description: ISDN HIGH VOLTAGE POWER CONTROLL
Packaging: Bulk
Part Status: Active
auf Bestellung 775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
47+9.77 EUR
Mindestbestellmenge: 47
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AUIRFR5305TR auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494
AUIRFR5305TR
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 31A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AUIRFR5305TR auirfr5305.pdf?fileId=5546d462533600a4015355b5cb911494
AUIRFR5305TR
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 31A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 521 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.46 EUR
10+3.57 EUR
100+2.5 EUR
500+2.04 EUR
Mindestbestellmenge: 4
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TLE4935LE6433HAXA1
Hersteller: Infineon Technologies
Description: TLE4935L - HALL EFFECT SWITCHE
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPI80N06S2L11AKSA2 IPx80N06S2L-11.pdf
IPI80N06S2L11AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2V @ 93µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
auf Bestellung 40500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
214+2.09 EUR
Mindestbestellmenge: 214
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IPB80N06S2LH5ATMA4 IPB%2CIPP80N06S2L-H5.pdf
IPB80N06S2LH5ATMA4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2406 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
157+2.85 EUR
Mindestbestellmenge: 157
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IPI80N06S2L05AKSA2 IPx80N06S2L-05.pdf
IPI80N06S2L05AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
138+3.24 EUR
Mindestbestellmenge: 138
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IPB17N25S3100ATMA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPB17N25S3100ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 54µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.5 EUR
2000+1.42 EUR
Mindestbestellmenge: 1000
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IPB17N25S3100ATMA1 Infineon-IPP_B17N25S3_100-DS-v01_01-EN.pdf?fileId=db3a30433b92f0e8013b937c398a014b
IPB17N25S3100ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 17A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 54µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 60951 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.59 EUR
10+2.98 EUR
100+2.06 EUR
500+1.73 EUR
Mindestbestellmenge: 4
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BSC882N03LSG INFNS16215-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V
Produkt ist nicht verfügbar
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BSC882N03LS G INFNS16215-1.pdf?t.download=true&u=5oefqw
BSC882N03LS G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 15 V
Produkt ist nicht verfügbar
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BSC882N03MSG INFNS16215-1.pdf?t.download=true&u=5oefqw
BSC882N03MSG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 34 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
auf Bestellung 23996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
577+0.87 EUR
Mindestbestellmenge: 577
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EVAL600W12VLLCC7DTOBO1
EVAL600W12VLLCC7DTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE2QR2280Z
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 350V ~ 410V
Current - Output: 50A
Frequency - Switching: 150kHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: ICE2QR2280Z
Supplied Contents: Board(s)
Main Purpose: DC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Power - Output: 600W
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+772.22 EUR
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SPA11N65C3 Infineon-SPP_A_I11N65C3-DS-v02_91-en.pdf?fileId=db3a3043163797a6011637d98e5e0049
SPA11N65C3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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