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BGB717L7ESDE6327 BGB717L7ESDE6327 Infineon Technologies INFNS27657-1.pdf?t.download=true&u=5oefqw Description: IC AMP FM 76MHZ-108MHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 76MHz ~ 108MHz
RF Type: FM
Voltage - Supply: 1.8V ~ 4V
Gain: 12dB
Current - Supply: 3mA
Noise Figure: 1dB
P1dB: -5.5dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSLP-7-1
auf Bestellung 132804 Stücke:
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670+0.75 EUR
Mindestbestellmenge: 670
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BGA715L7E6327 Infineon Technologies INFNS13467-1.pdf?t.download=true&u=5oefqw Description: IC AMP UMTS 1.9/2.1GHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 17dB
Current - Supply: 3.6mA
Noise Figure: 1.1dB
P1dB: -8dBm
Test Frequency: 2.1GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
auf Bestellung 11336 Stücke:
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726+0.72 EUR
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S29GL512T11DHIV20 S29GL512T11DHIV20 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2177 Stücke:
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2+13.27 EUR
10+12.33 EUR
25+11.95 EUR
40+11.75 EUR
80+11.47 EUR
260+11.27 EUR
Mindestbestellmenge: 2
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S29GL512T11TFV010 S29GL512T11TFV010 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL512T12TFN010 S29GL512T12TFN010 Infineon Technologies Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 546 Stücke:
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2+16.79 EUR
10+15.59 EUR
25+15.11 EUR
91+14.43 EUR
182+14.39 EUR
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SLE 4418 M2.2 Infineon Technologies SLE4418%2C%20SLE4428.pdf Description: IC EEPROM 1KBYTE M2.2 PKG
Packaging: Bulk
Package / Case: M2.2 Chip Card Module
Applications: Security
Supplier Device Package: M2.2 Chip Card Module
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPW16N50C3 SPW16N50C3 Infineon Technologies Infineon-SPW16N50C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42d2eca4824 Description: SPW16N50 - 500V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 270 Stücke:
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141+3.51 EUR
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SPA16N50C3 SPA16N50C3 Infineon Technologies INFNS14199-1.pdf?t.download=true&u=5oefqw Description: SPA16N50 - 500V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
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BGA420H6327 BGA420H6327 Infineon Technologies INFNS11594-1.pdf?t.download=true&u=5oefqw Description: IC RF AMP GPS SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
Produkt ist nicht verfügbar
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IKW25T120 IKW25T120 Infineon Technologies INFNS27302-1.pdf?t.download=true&u=5oefqw description Description: IKW25T120 - DISCRETE IGBT WITH A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/560ns
Switching Energy: 2mJ (on), 2.2mJ (off)
Test Condition: 600V, 25A, 22Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 190 W
Produkt ist nicht verfügbar
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1IRF3710PBF 1IRF3710PBF Infineon Technologies IRSDS11475-1.pdf?t.download=true&u=5oefqw Description: IRF3710 - 100V HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
Produkt ist nicht verfügbar
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RF3710PBF RF3710PBF Infineon Technologies IRSDS11475-1.pdf?t.download=true&u=5oefqw Description: IRF3710 - N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPD80R280P7ATMA1 IPD80R280P7ATMA1 Infineon Technologies Infineon-IPD80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da39b3dc5a9b Description: MOSFET N-CH 800V 17A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
auf Bestellung 4458 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.05 EUR
10+3.4 EUR
100+2.42 EUR
500+2.11 EUR
Mindestbestellmenge: 4
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IPD80R4K5P7ATMA1 IPD80R4K5P7ATMA1 Infineon Technologies Infineon-IPD80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da0c589b5949 Description: MOSFET N-CH 800V 1.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V
Produkt ist nicht verfügbar
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IPD80R4K5P7ATMA1 IPD80R4K5P7ATMA1 Infineon Technologies Infineon-IPD80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da0c589b5949 Description: MOSFET N-CH 800V 1.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V
Produkt ist nicht verfügbar
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SPB07N60C3 SPB07N60C3 Infineon Technologies Infineon-SPB07N60C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42df065491f Description: SPB07N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
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SPU07N60C3BKMA1 SPU07N60C3BKMA1 Infineon Technologies Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4 Description: MOSFET N-CH 650V 7.3A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 458 Stücke:
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270+1.68 EUR
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CY7C057V-12BBC CY7C057V-12BBC Infineon Technologies CY7C056V,057V.pdf Description: IC SRAM 1.152MBIT PAR 172FBGA
auf Bestellung 2169 Stücke:
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4+135.26 EUR
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BUZ30AH3045A Infineon Technologies INFNS15132-1.pdf?t.download=true&u=5oefqw Description: BUZ30 - 12V-300V N-CHANNEL POWER
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
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BSM150GT120DN2BOSA1 Infineon Technologies Description: IGBT MODULE 1200V
Packaging: Tray
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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FP35R12KT4B11BOSA1 FP35R12KT4B11BOSA1 Infineon Technologies Infineon-FP35R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431689f4420116c457e537082f Description: IGBT MOD 1200V 35A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
auf Bestellung 26 Stücke:
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5+131.12 EUR
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ESD204B102ELSE6327XTSA1 ESD204B102ELSE6327XTSA1 Infineon Technologies ESD204-B1-02.pdf Description: TVS DIODE 14VWM 28V PGTSSLP23
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
auf Bestellung 15000 Stücke:
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3406+0.15 EUR
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IKW20N65ET7XKSA1 IKW20N65ET7XKSA1 Infineon Technologies Infineon-IKW20N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bea06e57ef Description: IGBT TRENCH FS 650V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/210ns
Switching Energy: 360µJ (on), 360µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 128 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
Qualification: AEC-Q101
auf Bestellung 1289 Stücke:
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4+4.52 EUR
30+2.46 EUR
120+2.01 EUR
510+1.72 EUR
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IKW50N65ET7XKSA1 IKW50N65ET7XKSA1 Infineon Technologies Infineon-IKW50N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bed62757f8 Description: IGBT TRENCH FS 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/350ns
Switching Energy: 1.2mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 9Ohm, 15V
Gate Charge: 290 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 273 W
Qualification: AEC-Q101
auf Bestellung 189 Stücke:
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3+7.39 EUR
30+4.13 EUR
120+3.41 EUR
Mindestbestellmenge: 3
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BAV70WE6327 BAV70WE6327 Infineon Technologies INFNS11270-1.pdf?t.download=true&u=5oefqw Description: HIGH SPEED SWITCHING DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Produkt ist nicht verfügbar
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BAV70WH6433 BAV70WH6433 Infineon Technologies INFNS11270-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY GP 80V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
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BAV 70W H6327 BAV 70W H6327 Infineon Technologies INFNS11270-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY GP 80V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
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BSZ900N15NS3GATMA1 BSZ900N15NS3GATMA1 Infineon Technologies BSZ900N15NS3+Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a304326623792012669f7decc224c Description: MOSFET N-CH 150V 13A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V
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100+1.02 EUR
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BCR133E6393 BCR133E6393 Infineon Technologies Infineon-TLV4961-3M-DS-v01_00-EN.pdf?fileId=5546d46253f650570154529f327d6fdf Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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BCR133TE6327 BCR133TE6327 Infineon Technologies INFNS11633-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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ICE2A165IN ICE2A165IN Infineon Technologies Infineon-ICE2XXX-DS-v02_10-en.pdf?fileId=db3a304412b407950112b418cbe626ac Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 31 W
Produkt ist nicht verfügbar
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TLE4267GM TLE4267GM Infineon Technologies Infineon-TLE4267-DS-v02_51-EN.pdf?fileId=5546d46259d9a4bf0159f967db593e49 Description: IC REG LIN FIXED POS LDO REG 5V
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Produkt ist nicht verfügbar
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BAT15-099E6327 BAT15-099E6327 Infineon Technologies INFNS15420-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 4V 100MW SOT1434
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Resistance @ If, F: 5.5Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT143-4
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BCW60FFE6327 BCW60FFE6327 Infineon Technologies INFNS11039-1.pdf?t.download=true&u=5oefqw Description: BCW60 - LOW NOISE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
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BF1005SE6327HTSA1 BF1005SE6327HTSA1 Infineon Technologies BF1005S_Series.pdf Description: RF MOSFET 5V SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 22dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT-143-3D
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
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BF1005SE6327 BF1005SE6327 Infineon Technologies INFNS10758-1.pdf?t.download=true&u=5oefqw Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 800µA
Frequency: 1GHz
Configuration: N-Channel
Gain: 22dB
Technology: MOSFET
Noise Figure: 1.6dB
Supplier Device Package: SOT143 (SC-61)
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
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BF1005E6327HTSA1 BF1005E6327HTSA1 Infineon Technologies BF1005.pdf Description: RF MOSFET 5V SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 19dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT-143-3D
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
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CG7297AM Infineon Technologies Description: IC MCU CAPSENSE 32QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP06CN10LG IPP06CN10LG Infineon Technologies INFNS17009-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 180µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 50 V
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IPP05CN10L G IPP05CN10L G Infineon Technologies IPP05CN10L.pdf Description: MOSFET N-CH 100V 100A TO220-3
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FF450R07ME4BOSA1 FF450R07ME4BOSA1 Infineon Technologies Infineon-FF450R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e227bfd1087 Description: GBT MODULE 650V 450A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27.5 nF @ 25 V
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F4-50R07W2H3_B51 Infineon Technologies F4-50R07W2H3_B51_Rev2.0_10-29-14.pdf Description: IGBT MODULE VCES 650V 50A
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DF450R17N2E4PB11BPSA1 Infineon Technologies Description: IGBT MODULE LOW POWER ECONO
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FF450R06ME3BOSA1 Infineon Technologies Infineon-FF450R06ME3-DS-v03_02-en_de.pdf?fileId=db3a304318a6cd680118e516f837131a Description: IGBT MOD 600V 550A 1250W
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FF450R17ME4B11BOSA1 FF450R17ME4B11BOSA1 Infineon Technologies Infineon-FF450R17ME4_B11-DS-v03_01-en_de.pdf?fileId=db3a30432fbc32ee012fc06716403a90 Description: IGBT MOD 1700V 600A 2500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
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FF450R33T3E3P2BPSA1 Infineon Technologies Description: IGBT MOD 3300V 450A AGXHP100-3
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FF450R33T3E3P3BPMA1 Infineon Technologies Description: IGBT MOD 3300V 450A AGXHP100-3
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FF450R33T3E3P4BPMA1 Infineon Technologies Description: IGBT MOD 3300V 450A AGXHP100-3
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FF450R33T3E3P6BPMA1 Infineon Technologies Description: IGBT MOD 3300V 450A AGXHP100-3
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FF450R33T3E3B5P2BPSA1 Infineon Technologies Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R33T3E3B5P3BPSA1 Infineon Technologies Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
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FF450R33T3E3B5P4BPMA1 Infineon Technologies Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
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FF450R33T3E3B5P6BPMA1 Infineon Technologies Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9 Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
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F450R12KS4B11BOSA1 F450R12KS4B11BOSA1 Infineon Technologies Infineon-F4_50R12KS4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043345a30bc01346aa2466e1366 Description: IGBT MOD 1200V 70A 355W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
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TLS805B1LDVXUMA1 TLS805B1LDVXUMA1 Infineon Technologies Infineon-TLS805B1-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc1015969ed6e11424b Description: IC REG LIN POS ADJ 50MA TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Max): 41.7V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 50mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 11 µA
Qualification: AEC-Q100
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TLS805B1LDV50XUMA1 TLS805B1LDV50XUMA1 Infineon Technologies Infineon-TLS805B1LD%20V50-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969ed62f84247 Description: IC REG LINEAR 5V 50MA PG-TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.35V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 µA
Qualification: AEC-Q100
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9+2.16 EUR
12+1.57 EUR
25+1.42 EUR
100+1.26 EUR
250+1.18 EUR
500+1.13 EUR
1000+1.09 EUR
2500+1.05 EUR
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TLS805B1LDVBOARDTOBO1 TLS805B1LDVBOARDTOBO1 Infineon Technologies Infineon-Z8F55443029_TLS805x1LD-TLS810x1LD-Demoboard-UserManual-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a46f9d9c8037f Description: EVAL BOARD FOR TLS805B1LDV
Packaging: Box
Voltage - Input: 3V ~ 42V
Current - Output: 50mA
Contents: Board(s)
Regulator Type: Positive Adjustable
Utilized IC / Part: TLS805B1LDV
Channels per IC: 1 - Single
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SPD18P06PG SPD18P06PG Infineon Technologies Infineon-SPD18P06P-DS-v03_04-en.pdf?fileId=db3a30431ed1d7b2011f404c85eb4ee3 Description: SPD18P06 - 20V-250V P-CHANNEL PO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
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IPI320N203G IPI320N203G Infineon Technologies Infineon-IPP_B_I_320N20N3G-DS-v02_03-en.pdf?fileId=db3a3043243b5f170124967064ba184a Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 350 Stücke:
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161+3.12 EUR
Mindestbestellmenge: 161
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BTS426L1E3062ABUMA1 BTS426L1E3062ABUMA1 Infineon Technologies BTS426L1.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
auf Bestellung 616 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.29 EUR
10+5.54 EUR
25+5.11 EUR
100+4.63 EUR
250+4.4 EUR
500+4.26 EUR
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BGB717L7ESDE6327 INFNS27657-1.pdf?t.download=true&u=5oefqw
BGB717L7ESDE6327
Hersteller: Infineon Technologies
Description: IC AMP FM 76MHZ-108MHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 76MHz ~ 108MHz
RF Type: FM
Voltage - Supply: 1.8V ~ 4V
Gain: 12dB
Current - Supply: 3mA
Noise Figure: 1dB
P1dB: -5.5dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSLP-7-1
auf Bestellung 132804 Stücke:
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Anzahl Preis
670+0.75 EUR
Mindestbestellmenge: 670
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BGA715L7E6327 INFNS13467-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IC AMP UMTS 1.9/2.1GHZ TSLP7-1
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 17dB
Current - Supply: 3.6mA
Noise Figure: 1.1dB
P1dB: -8dBm
Test Frequency: 2.1GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
auf Bestellung 11336 Stücke:
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Anzahl Preis
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S29GL512T11DHIV20 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T11DHIV20
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 2177 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.27 EUR
10+12.33 EUR
25+11.95 EUR
40+11.75 EUR
80+11.47 EUR
260+11.27 EUR
Mindestbestellmenge: 2
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S29GL512T11TFV010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T11TFV010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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S29GL512T12TFN010 Infineon-S29GL01GT_S29GL512T_1-Gb_(128_MB)_512-Mb_(64_MB)_GL-T_MirrorBit_Eclipse_Flash-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed2abb34fce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_in
S29GL512T12TFN010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 546 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.79 EUR
10+15.59 EUR
25+15.11 EUR
91+14.43 EUR
182+14.39 EUR
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SLE 4418 M2.2 SLE4418%2C%20SLE4428.pdf
Hersteller: Infineon Technologies
Description: IC EEPROM 1KBYTE M2.2 PKG
Packaging: Bulk
Package / Case: M2.2 Chip Card Module
Applications: Security
Supplier Device Package: M2.2 Chip Card Module
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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SPW16N50C3 Infineon-SPW16N50C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42d2eca4824
SPW16N50C3
Hersteller: Infineon Technologies
Description: SPW16N50 - 500V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
141+3.51 EUR
Mindestbestellmenge: 141
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SPA16N50C3 INFNS14199-1.pdf?t.download=true&u=5oefqw
SPA16N50C3
Hersteller: Infineon Technologies
Description: SPA16N50 - 500V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 10A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Produkt ist nicht verfügbar
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BGA420H6327 INFNS11594-1.pdf?t.download=true&u=5oefqw
BGA420H6327
Hersteller: Infineon Technologies
Description: IC RF AMP GPS SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Active
Produkt ist nicht verfügbar
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IKW25T120 description INFNS27302-1.pdf?t.download=true&u=5oefqw
IKW25T120
Hersteller: Infineon Technologies
Description: IKW25T120 - DISCRETE IGBT WITH A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/560ns
Switching Energy: 2mJ (on), 2.2mJ (off)
Test Condition: 600V, 25A, 22Ohm, 15V
Gate Charge: 155 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 190 W
Produkt ist nicht verfügbar
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1IRF3710PBF IRSDS11475-1.pdf?t.download=true&u=5oefqw
1IRF3710PBF
Hersteller: Infineon Technologies
Description: IRF3710 - 100V HEXFET N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 28A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3130 pF @ 25 V
Produkt ist nicht verfügbar
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RF3710PBF IRSDS11475-1.pdf?t.download=true&u=5oefqw
RF3710PBF
Hersteller: Infineon Technologies
Description: IRF3710 - N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPD80R280P7ATMA1 Infineon-IPD80R280P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da39b3dc5a9b
IPD80R280P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 7.2A, 10V
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 500 V
auf Bestellung 4458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.05 EUR
10+3.4 EUR
100+2.42 EUR
500+2.11 EUR
Mindestbestellmenge: 4
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IPD80R4K5P7ATMA1 Infineon-IPD80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da0c589b5949
IPD80R4K5P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V
Produkt ist nicht verfügbar
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IPD80R4K5P7ATMA1 Infineon-IPD80R4K5P7-DS-v02_00-EN.pdf?fileId=5546d46255a50e820155da0c589b5949
IPD80R4K5P7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 400mA, 10V
Power Dissipation (Max): 13W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 80 pF @ 500 V
Produkt ist nicht verfügbar
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SPB07N60C3 Infineon-SPB07N60C3-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42df065491f
SPB07N60C3
Hersteller: Infineon Technologies
Description: SPB07N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
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SPU07N60C3BKMA1 Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4
SPU07N60C3BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO251-3-21
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
270+1.68 EUR
Mindestbestellmenge: 270
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CY7C057V-12BBC CY7C056V,057V.pdf
CY7C057V-12BBC
Hersteller: Infineon Technologies
Description: IC SRAM 1.152MBIT PAR 172FBGA
auf Bestellung 2169 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+135.26 EUR
Mindestbestellmenge: 4
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BUZ30AH3045A INFNS15132-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BUZ30 - 12V-300V N-CHANNEL POWER
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
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BSM150GT120DN2BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V
Packaging: Tray
Part Status: Last Time Buy
Produkt ist nicht verfügbar
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FP35R12KT4B11BOSA1 Infineon-FP35R12KT4_B11-DS-v03_00-en_de.pdf?fileId=db3a30431689f4420116c457e537082f
FP35R12KT4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 35A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+131.12 EUR
Mindestbestellmenge: 5
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ESD204B102ELSE6327XTSA1 ESD204-B1-02.pdf
ESD204B102ELSE6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 14VWM 28V PGTSSLP23
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 4pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: PG-TSSLP-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 8.5V
Voltage - Clamping (Max) @ Ipp: 28V
Power Line Protection: No
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3406+0.15 EUR
Mindestbestellmenge: 3406
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IKW20N65ET7XKSA1 Infineon-IKW20N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bea06e57ef
IKW20N65ET7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 40A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 20A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/210ns
Switching Energy: 360µJ (on), 360µJ (off)
Test Condition: 400V, 20A, 12Ohm, 15V
Gate Charge: 128 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
Qualification: AEC-Q101
auf Bestellung 1289 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.52 EUR
30+2.46 EUR
120+2.01 EUR
510+1.72 EUR
Mindestbestellmenge: 4
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IKW50N65ET7XKSA1 Infineon-IKW50N65ET7-DataSheet-v02_01-EN.pdf?fileId=5546d46272e49d2a017351bed62757f8
IKW50N65ET7XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/350ns
Switching Energy: 1.2mJ (on), 850µJ (off)
Test Condition: 400V, 50A, 9Ohm, 15V
Gate Charge: 290 nC
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 273 W
Qualification: AEC-Q101
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.39 EUR
30+4.13 EUR
120+3.41 EUR
Mindestbestellmenge: 3
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BAV70WE6327 INFNS11270-1.pdf?t.download=true&u=5oefqw
BAV70WE6327
Hersteller: Infineon Technologies
Description: HIGH SPEED SWITCHING DIODE
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Produkt ist nicht verfügbar
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BAV70WH6433 INFNS11270-1.pdf?t.download=true&u=5oefqw
BAV70WH6433
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
auf Bestellung 926466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6632+0.081 EUR
Mindestbestellmenge: 6632
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BAV 70W H6327 INFNS11270-1.pdf?t.download=true&u=5oefqw
BAV 70W H6327
Hersteller: Infineon Technologies
Description: DIODE ARRAY GP 80V 200MA SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6632+0.08 EUR
Mindestbestellmenge: 6632
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BSZ900N15NS3GATMA1 BSZ900N15NS3+Rev2.1.pdf?folderId=db3a304326623792012669f6bee2224b&fileId=db3a304326623792012669f7decc224c
BSZ900N15NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 13A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 75 V
auf Bestellung 11953 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
16+1.16 EUR
100+1.02 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 10
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BCR133E6393 Infineon-TLV4961-3M-DS-v01_00-EN.pdf?fileId=5546d46253f650570154529f327d6fdf
BCR133E6393
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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BCR133TE6327 INFNS11633-1.pdf?t.download=true&u=5oefqw
BCR133TE6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 130 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Produkt ist nicht verfügbar
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ICE2A165IN Infineon-ICE2XXX-DS-v02_10-en.pdf?fileId=db3a304412b407950112b418cbe626ac
ICE2A165IN
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 6.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 31 W
Produkt ist nicht verfügbar
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TLE4267GM Infineon-TLE4267-DS-v02_51-EN.pdf?fileId=5546d46259d9a4bf0159f967db593e49
TLE4267GM
Hersteller: Infineon Technologies
Description: IC REG LIN FIXED POS LDO REG 5V
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 4 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Inhibit, Reset
Part Status: Active
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Temperature, Over Voltage, Reverse Polarity, Short Circuit, Transient Voltage
Current - Supply (Max): 80 mA
Produkt ist nicht verfügbar
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BAT15-099E6327 INFNS15420-1.pdf?t.download=true&u=5oefqw
BAT15-099E6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW SOT1434
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.5pF @ 0V, 1MHz
Resistance @ If, F: 5.5Ohm @ 50mA, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT143-4
Part Status: Active
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
Produkt ist nicht verfügbar
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BCW60FFE6327 INFNS11039-1.pdf?t.download=true&u=5oefqw
BCW60FFE6327
Hersteller: Infineon Technologies
Description: BCW60 - LOW NOISE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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BF1005SE6327HTSA1 BF1005S_Series.pdf
BF1005SE6327HTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 22dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT-143-3D
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
auf Bestellung 161400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4157+0.12 EUR
Mindestbestellmenge: 4157
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BF1005SE6327 INFNS10758-1.pdf?t.download=true&u=5oefqw
BF1005SE6327
Hersteller: Infineon Technologies
Description: RF N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 800µA
Frequency: 1GHz
Configuration: N-Channel
Gain: 22dB
Technology: MOSFET
Noise Figure: 1.6dB
Supplier Device Package: SOT143 (SC-61)
Part Status: Active
Voltage - Rated: 8 V
Voltage - Test: 5 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4157+0.12 EUR
Mindestbestellmenge: 4157
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BF1005E6327HTSA1 BF1005.pdf
BF1005E6327HTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: N-Channel
Gain: 19dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.6dB
Supplier Device Package: PG-SOT-143-3D
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
auf Bestellung 321564 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2968+0.17 EUR
Mindestbestellmenge: 2968
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CG7297AM
Hersteller: Infineon Technologies
Description: IC MCU CAPSENSE 32QFN
Packaging: Tray
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IPP06CN10LG INFNS17009-1.pdf?t.download=true&u=5oefqw
IPP06CN10LG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 100A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 180µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 50 V
auf Bestellung 490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
208+2.36 EUR
Mindestbestellmenge: 208
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IPP05CN10L G IPP05CN10L.pdf
IPP05CN10L G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO220-3
Produkt ist nicht verfügbar
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FF450R07ME4BOSA1 Infineon-FF450R07ME4-DataSheet-v03_00-EN.pdf?fileId=5546d4626e651a41016e7e227bfd1087
FF450R07ME4BOSA1
Hersteller: Infineon Technologies
Description: GBT MODULE 650V 450A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 27.5 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+166 EUR
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F4-50R07W2H3_B51 F4-50R07W2H3_B51_Rev2.0_10-29-14.pdf
Hersteller: Infineon Technologies
Description: IGBT MODULE VCES 650V 50A
Produkt ist nicht verfügbar
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DF450R17N2E4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER ECONO
Produkt ist nicht verfügbar
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FF450R06ME3BOSA1 Infineon-FF450R06ME3-DS-v03_02-en_de.pdf?fileId=db3a304318a6cd680118e516f837131a
Hersteller: Infineon Technologies
Description: IGBT MOD 600V 550A 1250W
Produkt ist nicht verfügbar
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FF450R17ME4B11BOSA1 Infineon-FF450R17ME4_B11-DS-v03_01-en_de.pdf?fileId=db3a30432fbc32ee012fc06716403a90
FF450R17ME4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 600A 2500W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 2500 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R33T3E3P2BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 450A AGXHP100-3
Produkt ist nicht verfügbar
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FF450R33T3E3P3BPMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 450A AGXHP100-3
Produkt ist nicht verfügbar
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FF450R33T3E3P4BPMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 450A AGXHP100-3
Produkt ist nicht verfügbar
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FF450R33T3E3P6BPMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 3300V 450A AGXHP100-3
Produkt ist nicht verfügbar
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FF450R33T3E3B5P2BPSA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R33T3E3B5P3BPSA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R33T3E3B5P4BPMA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
Produkt ist nicht verfügbar
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FF450R33T3E3B5P6BPMA1 Infineon-FF450R33T3E3_B5-DS-v03_00-EN.pdf?fileId=5546d46267c74c9a01683cd2886064d9
Hersteller: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-6
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 84 nF @ 25 V
Produkt ist nicht verfügbar
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F450R12KS4B11BOSA1 Infineon-F4_50R12KS4_B11-DS-v02_00-en_de.pdf?fileId=db3a3043345a30bc01346aa2466e1366
F450R12KS4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 70A 355W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 355 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 3.4 nF @ 25 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+137.36 EUR
Mindestbestellmenge: 4
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TLS805B1LDVXUMA1 Infineon-TLS805B1-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc1015969ed6e11424b
TLS805B1LDVXUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 50MA TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 1 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Max): 41.7V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.3V @ 50mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 11 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLS805B1LDV50XUMA1 Infineon-TLS805B1LD%20V50-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc1015969ed62f84247
TLS805B1LDV50XUMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 50MA PG-TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 50mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 8 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
PSRR: 55dB (100Hz)
Voltage Dropout (Max): 0.35V @ 50mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 12 µA
Qualification: AEC-Q100
auf Bestellung 14945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
12+1.57 EUR
25+1.42 EUR
100+1.26 EUR
250+1.18 EUR
500+1.13 EUR
1000+1.09 EUR
2500+1.05 EUR
Mindestbestellmenge: 9
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TLS805B1LDVBOARDTOBO1 Infineon-Z8F55443029_TLS805x1LD-TLS810x1LD-Demoboard-UserManual-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a46f9d9c8037f
TLS805B1LDVBOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS805B1LDV
Packaging: Box
Voltage - Input: 3V ~ 42V
Current - Output: 50mA
Contents: Board(s)
Regulator Type: Positive Adjustable
Utilized IC / Part: TLS805B1LDV
Channels per IC: 1 - Single
Produkt ist nicht verfügbar
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SPD18P06PG Infineon-SPD18P06P-DS-v03_04-en.pdf?fileId=db3a30431ed1d7b2011f404c85eb4ee3
SPD18P06PG
Hersteller: Infineon Technologies
Description: SPD18P06 - 20V-250V P-CHANNEL PO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18.6A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Produkt ist nicht verfügbar
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IPI320N203G Infineon-IPP_B_I_320N20N3G-DS-v02_03-en.pdf?fileId=db3a3043243b5f170124967064ba184a
IPI320N203G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
161+3.12 EUR
Mindestbestellmenge: 161
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BTS426L1E3062ABUMA1 BTS426L1.pdf
BTS426L1E3062ABUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-5
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 50mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-5-2
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Not For New Designs
auf Bestellung 616 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.29 EUR
10+5.54 EUR
25+5.11 EUR
100+4.63 EUR
250+4.4 EUR
500+4.26 EUR
Mindestbestellmenge: 3
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