Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (128413) > Seite 379 nach 2141

Wählen Sie Seite:   [  << Vorherige Seite ]  1 214 374 375 376 377 378 379 380 381 382 383 384 428 642 856 1070 1284 1498 1712 1926 2140 2141  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IRLC8256ED Infineon Technologies Description: MOSFET N-CH WAFER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR3897MTRPBF IR3897MTRPBF Infineon Technologies ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813 Description: IC REG BUCK ADJ 4A 16POWERQFN
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Synchronous Rectifier: Yes
Supplier Device Package: 16-PowerQFN
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR3898MTRPBF IR3898MTRPBF Infineon Technologies ir3898m.pdf?fileId=5546d462533600a4015355d5ebb01815 Description: IC REG BUCK ADJ 6A 16POWERQFN
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Synchronous Rectifier: Yes
Supplier Device Package: 16-PowerQFN
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 6A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR3899MTRPBF IR3899MTRPBF Infineon Technologies ir3899m.pdf?fileId=5546d462533600a4015355d5f3f71817 Description: IC REG BUCK ADJ 9A 16PQFN
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Synchronous Rectifier: Yes
Supplier Device Package: 16-PQFN (4x5)
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 9A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR3894MTRPBF IR3894MTRPBF Infineon Technologies ir3894m.pdf?fileId=5546d462533600a4015355d5d4d6180f Description: IC REG BUCK ADJ 12A 16POWERQFN
Synchronous Rectifier: Yes
Supplier Device Package: 16-PowerQFN
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1480V33-200AXC CY7C1480V33-200AXC Infineon Technologies Infineon-CY7C1480BV33_CY7C1482BV33_72_MBIT_(2M_X_36_4M_X_18)_PIPELINED_SYNC_SRAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec45b3739ca Description: IC SRAM 72MBIT PARALLEL 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Access Time: 3 ns
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
3+287.73 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC817K-25WE6327 BC817K-25WE6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC817K-16WH6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC817K-16E6327 BC817K-16E6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
7572+0.076 EUR
Mindestbestellmenge: 7572 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC817K-25E6327 BC817K-25E6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC817K-25WH6327 BC817K-25WH6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
auf Bestellung 23600 Stücke:
Lieferzeit 10-14 Tag (e)
5735+0.096 EUR
Mindestbestellmenge: 5735 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC817K-25WH6433 BC817K-25WH6433 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Package / Case: SC-70, SOT-323
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
5735+0.096 EUR
Mindestbestellmenge: 5735 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIDC07D60AF6X1SA1 Infineon Technologies SIDC07D60AF6_L4294M.pdf?folderId=db3a304412b407950112b435f0da6425&fileId=db3a304412b407950112b435f1586426 Description: DIODE GP 600V 22.5A WAFER
Current - Average Rectified (Io): 22.5A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRSM515-055DA IRSM515-055DA Infineon Technologies irsm505-055.pdf?fileId=5546d462533600a40153567bf5dc287d Description: IC HALF BRIDGE DRIVER 2.4A 23DIP
Part Status: Discontinued at Digi-Key
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 400V (Max)
Technology: UMOS
Current - Peak Output: 15A
Current - Output / Channel: 2.4A
Applications: AC Motors
Rds On (Typ): 1.3Ohm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Features: Bootstrap Circuit
Packaging: Bulk
auf Bestellung 5520 Stücke:
Lieferzeit 10-14 Tag (e)
49+11 EUR
Mindestbestellmenge: 49 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IFX1117MEV33 IFX1117MEV33 Infineon Technologies INFNS16936-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN 3.3V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IFX1117MEV IFX1117MEV Infineon Technologies INFNS16936-1.pdf?t.download=true&u=5oefqw Description: IFX1117 - LINEAR VOLTAGE REGULAT
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 1.4V @ 1A
PSRR: 70dB (120Hz)
Voltage - Output (Min/Fixed): 1.25V
Voltage - Output (Max): 13.6V
Supplier Device Package: PG-SOT223-4
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C (TJ)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
auf Bestellung 39213 Stücke:
Lieferzeit 10-14 Tag (e)
961+0.62 EUR
Mindestbestellmenge: 961 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IFX1117MEV33HTMA1 IFX1117MEV33HTMA1 Infineon Technologies IFX1117_Rev1.0_2-24-11.pdf Description: IC REG LIN 3.3V 1A SOT223-4-21
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 3.3V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 2959 Stücke:
Lieferzeit 10-14 Tag (e)
655+0.82 EUR
Mindestbestellmenge: 655 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPT60R075CFD7XTMA1 IPT60R075CFD7XTMA1 Infineon Technologies Infineon-IPT60R075CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a0edb30e3 Description: MOSFET N-CH 600V 33A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD35N10S3L-26 IPD35N10S3L-26 Infineon Technologies INFNS16590-1.pdf?t.download=true&u=5oefqw Description: IPD35N10 - 75V-100V N-CHANNEL AU
Produkt ist nicht verfügbar
 Mindestbestellmenge: 331 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R1K0CEAUMA1 IPD60R1K0CEAUMA1 Infineon Technologies Infineon-IPD60R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94 Description: MOSFET N-CH 600V 6.8A 61W TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 7430 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.87 EUR
18+1.17 EUR
50+0.86 EUR
100+0.76 EUR
500+0.58 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE4269GL TLE4269GL Infineon Technologies Infineon-TLE4269-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f96807553e57 Description: IC REG LIN FIXED POS LDO REG 5V
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-20
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDB6U205N16LHOSA1 DDB6U205N16LHOSA1 Infineon Technologies Infineon-DDB6U205N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4314e925403 Description: DIODE MODULE GP 1600V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+396.91 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BTC50010-1TAA Infineon Technologies INFN-S-A0001300279-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Part Status: Active
Fault Protection: Over Voltage
Supplier Device Package: PG-TO-263-7-8
Ratio - Input:Output: 1:1
Current - Output (Max): 30A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 18V
Input Type: Non-Inverting
Rds On (Typ): 900µOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Features: Load Discharge
Packaging: Bulk
auf Bestellung 1866 Stücke:
Lieferzeit 10-14 Tag (e)
74+8.54 EUR
Mindestbestellmenge: 74 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGSA20VGL8E6327XTSA1 BGSA20VGL8E6327XTSA1 Infineon Technologies Infineon-BGSA20VGL8-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f9201722cfc21123da1 Description: IC RF SWITCH SPST 6GHZ TSNP8-1
Supplier Device Package: PG-TSNP-8-1
Frequency Range: 6GHz
Voltage - Supply: 1.65V ~ 3.6V
RF Type: CDMA, EDGE, LTE, W-CDMA
Circuit: SPST
Mounting Type: Surface Mount
Package / Case: 8-XFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGSA20UGL8E6327XTSA1 BGSA20UGL8E6327XTSA1 Infineon Technologies Infineon-BGSA20UGL8-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f9201722cfc2b923da4 Description: IC RF ANT DEVICE 10TSLP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGSA20UGL8E6327XTSA1 BGSA20UGL8E6327XTSA1 Infineon Technologies Infineon-BGSA20UGL8-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f9201722cfc2b923da4 Description: IC RF ANT DEVICE 10TSLP
Packaging: Cut Tape (CT)
auf Bestellung 14775 Stücke:
Lieferzeit 10-14 Tag (e)
21+1 EUR
30+0.71 EUR
33+0.64 EUR
100+0.56 EUR
250+0.51 EUR
500+0.49 EUR
1000+0.48 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGSA20GN10E6327XTSA1 BGSA20GN10E6327XTSA1 Infineon Technologies Infineon-RF Front End Solutions for Mobile Applications-BC-v01_00-EN.pdf?fileId=5546d46254e133b401552f350ee3697c Description: IC RF ANT DEVICE 10TSNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2113MTRPBF IRS2113MTRPBF Infineon Technologies irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7 Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPI80N06S207AKSA1 IPI80N06S207AKSA1 Infineon Technologies Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43339a25ab4&ack=t Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
249+2.17 EUR
Mindestbestellmenge: 249 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPI80N06S4L07AKSA2 IPI80N06S4L07AKSA2 Infineon Technologies Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304320d39d590121aa3ae68d1c80 Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9817 Stücke:
Lieferzeit 10-14 Tag (e)
235+2.27 EUR
Mindestbestellmenge: 235 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N06S2L-11 IPB80N06S2L-11 Infineon Technologies INFNS17038-1.pdf?t.download=true&u=5oefqw Description: IPB80N06 - 55V-60V N-CHANNEL AUT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 93µA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI80N06S207AKSA2 IPI80N06S207AKSA2 Infineon Technologies Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?fileId=db3a304412b407950112b43339a25ab4&ack=t Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
152+3.55 EUR
Mindestbestellmenge: 152 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65SS5XKSA1 IKW75N65SS5XKSA1 Infineon Technologies Infineon-IKW75N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc2833db31af Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/145ns
Switching Energy: 450µJ (on), 750µJ (off)
Test Condition: 400V, 75A, 5.6Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.17 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65RH5XKSA1 IKW75N65RH5XKSA1 Infineon Technologies Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/180ns
Switching Energy: 360µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 277 Stücke:
Lieferzeit 10-14 Tag (e)
2+18.18 EUR
30+10.66 EUR
120+9.01 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IDK12G65C5XTMA1 IDK12G65C5XTMA1 Infineon Technologies INFNS29239-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE
auf Bestellung 1437 Stücke:
Lieferzeit 10-14 Tag (e)
103+6.18 EUR
Mindestbestellmenge: 103 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CYW170-01SXC CYW170-01SXC Infineon Technologies Description: IC CLK ZDB 133MHZ 8SOIC
Input: Clock
Output: Clock
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: 8-SOIC
auf Bestellung 6567 Stücke:
Lieferzeit 10-14 Tag (e)
189+3.33 EUR
Mindestbestellmenge: 189 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R180C7 Infineon Technologies Infineon-IPP60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d483fe4ba707b Description: 13A, 600V, 0.18OHM, N-CHANNEL MO
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 260µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR35PNH6433 BCR35PNH6433 Infineon Technologies INFNS19243-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR 35PN H6327 Infineon Technologies INFNS19243-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
4116+0.14 EUR
Mindestbestellmenge: 4116 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR39PN-E6327 BCR39PN-E6327 Infineon Technologies INFNS19243-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS NPN/PNP
Packaging: Bulk
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
2077+0.27 EUR
Mindestbestellmenge: 2077 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DF200R12PT4B6BOSA1 DF200R12PT4B6BOSA1 Infineon Technologies Infineon-DF200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e34322f5f8d Description: IGBT MOD 1200V 300A 1100W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
1+446.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FD200R12PT4B6BOSA1 FD200R12PT4B6BOSA1 Infineon Technologies Infineon-FD200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e3a8c455fa0 Description: IGBT MOD 1200V 300A 1100W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
2+342.66 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FS200R07PE4BOSA1 FS200R07PE4BOSA1 Infineon Technologies Infineon-FS200R07PE4-DS-v02_01-en_de.pdf?fileId=db3a304333227b5e01335963ee7908dd Description: IGBT MOD 650V 200A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
1+260.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 Infineon Technologies Infineon-FF200R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a30431441fb5d0114d51250e31b88 Description: IGBT MODULE 1200V 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 351 Stücke:
Lieferzeit 10-14 Tag (e)
3+202.18 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
F3L200R07PE4BOSA1 F3L200R07PE4BOSA1 Infineon Technologies Infineon-F3L200R07PE4-DS-v02_00-en_de.pdf?fileId=db3a30432f0d175c012f1060f84238f4 Description: IGBT MOD 650V 200A 680W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+233.61 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DF200R12PT4B6BOSA1 DF200R12PT4B6BOSA1 Infineon Technologies Infineon-DF200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e34322f5f8d Description: IGBT MOD 1200V 300A 1100W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS200R12KT4RB11BOSA1 FS200R12KT4RB11BOSA1 Infineon Technologies Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6 Description: IGBT MOD 1200V 280A 1000W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
1+237.61 EUR
10+193.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FS200R12PT4PBOSA1 FS200R12PT4PBOSA1 Infineon Technologies Infineon-FS200R12PT4P-DS-v02_00-EN.pdf?fileId=5546d46253f6505701542e3844cf3eda Description: IGBT MOD 1200V 200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+367.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BAS7006WH6327XTSA1 BAS7006WH6327XTSA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V 70MA SOT323
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT323
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.42 EUR
85+0.25 EUR
121+0.18 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPU02N60S5XK SPU02N60S5XK Infineon Technologies Infineon-SPD_U02N60S5-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42c91374727 Description: SPU02N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Part Status: Active
auf Bestellung 1493 Stücke:
Lieferzeit 10-14 Tag (e)
434+1.32 EUR
Mindestbestellmenge: 434 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPU02N60S5 Infineon Technologies Infineon-SPD_U02N60S5-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42c91374727 Description: SPU02N60 - 600V COOLMOS N-CHANNE
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS140WE6327 BAS140WE6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 40V 120MA SOD323-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS7006E6433HTMA1 BAS7006E6433HTMA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS7006E6433HTMA1 BAS7006E6433HTMA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS70-06E6327 BAS70-06E6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: BAS70 - HIGH SPEED SWITCHING, CL
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS70-06E6433 BAS70-06E6433 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V 70MA SOT23
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
3328+0.17 EUR
Mindestbestellmenge: 3328 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IDB18E120 IDB18E120 Infineon Technologies INFNS27247-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 1.2KV 31A TO263
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 18 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PG-TO263-3-2
Current - Average Rectified (Io): 31A
Technology: Standard
Reverse Recovery Time (trr): 195 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 21100 Stücke:
Lieferzeit 10-14 Tag (e)
265+2.18 EUR
Mindestbestellmenge: 265 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR119E6327HTSA1 BCR119E6327HTSA1 Infineon Technologies bcr119series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144057767402f3 Description: TRANS PREBIAS NPN 50V SOT23
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: PG-SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Resistors Included: R1 Only
auf Bestellung 378000 Stücke:
Lieferzeit 10-14 Tag (e)
8290+0.071 EUR
Mindestbestellmenge: 8290 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R600P6 Infineon Technologies INFNS27707-1.pdf?t.download=true&u=5oefqw Description: 600V, 0.6OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R180C7 IPA60R180C7 Infineon Technologies Infineon-IPA60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fd65089d0627d Description: 9A, 600V, 0.18OHM, N-CHANNEL MOS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLC8256ED
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR3897MTRPBF ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813
IR3897MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 4A 16POWERQFN
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Synchronous Rectifier: Yes
Supplier Device Package: 16-PowerQFN
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR3898MTRPBF ir3898m.pdf?fileId=5546d462533600a4015355d5ebb01815
IR3898MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 6A 16POWERQFN
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Synchronous Rectifier: Yes
Supplier Device Package: 16-PowerQFN
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 6A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR3899MTRPBF ir3899m.pdf?fileId=5546d462533600a4015355d5f3f71817
IR3899MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 9A 16PQFN
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Synchronous Rectifier: Yes
Supplier Device Package: 16-PQFN (4x5)
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 9A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IR3894MTRPBF ir3894m.pdf?fileId=5546d462533600a4015355d5d4d6180f
IR3894MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 12A 16POWERQFN
Synchronous Rectifier: Yes
Supplier Device Package: 16-PowerQFN
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CY7C1480V33-200AXC Infineon-CY7C1480BV33_CY7C1482BV33_72_MBIT_(2M_X_36_4M_X_18)_PIPELINED_SYNC_SRAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec45b3739ca
CY7C1480V33-200AXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Access Time: 3 ns
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+287.73 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC817K-25WE6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-25WE6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC817K-16WH6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC817K-16E6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-16E6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7572+0.076 EUR
Mindestbestellmenge: 7572 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC817K-25E6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-25E6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC817K-25WH6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-25WH6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
auf Bestellung 23600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5735+0.096 EUR
Mindestbestellmenge: 5735 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BC817K-25WH6433 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-25WH6433
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Package / Case: SC-70, SOT-323
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5735+0.096 EUR
Mindestbestellmenge: 5735 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SIDC07D60AF6X1SA1 SIDC07D60AF6_L4294M.pdf?folderId=db3a304412b407950112b435f0da6425&fileId=db3a304412b407950112b435f1586426
Hersteller: Infineon Technologies
Description: DIODE GP 600V 22.5A WAFER
Current - Average Rectified (Io): 22.5A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRSM515-055DA irsm505-055.pdf?fileId=5546d462533600a40153567bf5dc287d
IRSM515-055DA
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 2.4A 23DIP
Part Status: Discontinued at Digi-Key
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 400V (Max)
Technology: UMOS
Current - Peak Output: 15A
Current - Output / Channel: 2.4A
Applications: AC Motors
Rds On (Typ): 1.3Ohm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Features: Bootstrap Circuit
Packaging: Bulk
auf Bestellung 5520 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
49+11 EUR
Mindestbestellmenge: 49 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IFX1117MEV33 INFNS16936-1.pdf?t.download=true&u=5oefqw
IFX1117MEV33
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IFX1117MEV INFNS16936-1.pdf?t.download=true&u=5oefqw
IFX1117MEV
Hersteller: Infineon Technologies
Description: IFX1117 - LINEAR VOLTAGE REGULAT
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 1.4V @ 1A
PSRR: 70dB (120Hz)
Voltage - Output (Min/Fixed): 1.25V
Voltage - Output (Max): 13.6V
Supplier Device Package: PG-SOT223-4
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C (TJ)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
auf Bestellung 39213 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
961+0.62 EUR
Mindestbestellmenge: 961 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IFX1117MEV33HTMA1 IFX1117_Rev1.0_2-24-11.pdf
IFX1117MEV33HTMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 1A SOT223-4-21
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 3.3V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 2959 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
655+0.82 EUR
Mindestbestellmenge: 655 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPT60R075CFD7XTMA1 Infineon-IPT60R075CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a0edb30e3
IPT60R075CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 33A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD35N10S3L-26 INFNS16590-1.pdf?t.download=true&u=5oefqw
IPD35N10S3L-26
Hersteller: Infineon Technologies
Description: IPD35N10 - 75V-100V N-CHANNEL AU
Produkt ist nicht verfügbar
Mindestbestellmenge: 331 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD60R1K0CEAUMA1 Infineon-IPD60R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94
IPD60R1K0CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6.8A 61W TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 7430 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
12+1.87 EUR
18+1.17 EUR
50+0.86 EUR
100+0.76 EUR
500+0.58 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE4269GL Infineon-TLE4269-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f96807553e57
TLE4269GL
Hersteller: Infineon Technologies
Description: IC REG LIN FIXED POS LDO REG 5V
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-20
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DDB6U205N16LHOSA1 Infineon-DDB6U205N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4314e925403
DDB6U205N16LHOSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1600V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+396.91 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BTC50010-1TAA INFN-S-A0001300279-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Part Status: Active
Fault Protection: Over Voltage
Supplier Device Package: PG-TO-263-7-8
Ratio - Input:Output: 1:1
Current - Output (Max): 30A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 18V
Input Type: Non-Inverting
Rds On (Typ): 900µOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Features: Load Discharge
Packaging: Bulk
auf Bestellung 1866 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
74+8.54 EUR
Mindestbestellmenge: 74 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGSA20VGL8E6327XTSA1 Infineon-BGSA20VGL8-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f9201722cfc21123da1
BGSA20VGL8E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPST 6GHZ TSNP8-1
Supplier Device Package: PG-TSNP-8-1
Frequency Range: 6GHz
Voltage - Supply: 1.65V ~ 3.6V
RF Type: CDMA, EDGE, LTE, W-CDMA
Circuit: SPST
Mounting Type: Surface Mount
Package / Case: 8-XFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BGSA20UGL8E6327XTSA1 Infineon-BGSA20UGL8-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f9201722cfc2b923da4
BGSA20UGL8E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF ANT DEVICE 10TSLP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 15000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGSA20UGL8E6327XTSA1 Infineon-BGSA20UGL8-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f9201722cfc2b923da4
BGSA20UGL8E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF ANT DEVICE 10TSLP
Packaging: Cut Tape (CT)
auf Bestellung 14775 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
21+1 EUR
30+0.71 EUR
33+0.64 EUR
100+0.56 EUR
250+0.51 EUR
500+0.49 EUR
1000+0.48 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGSA20GN10E6327XTSA1 Infineon-RF Front End Solutions for Mobile Applications-BC-v01_00-EN.pdf?fileId=5546d46254e133b401552f350ee3697c
BGSA20GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF ANT DEVICE 10TSNP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRS2113MTRPBF irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7
IRS2113MTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPI80N06S207AKSA1 Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43339a25ab4&ack=t
IPI80N06S207AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
249+2.17 EUR
Mindestbestellmenge: 249 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPI80N06S4L07AKSA2 Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304320d39d590121aa3ae68d1c80
IPI80N06S4L07AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9817 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
235+2.27 EUR
Mindestbestellmenge: 235 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N06S2L-11 INFNS17038-1.pdf?t.download=true&u=5oefqw
IPB80N06S2L-11
Hersteller: Infineon Technologies
Description: IPB80N06 - 55V-60V N-CHANNEL AUT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 93µA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI80N06S207AKSA2 Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?fileId=db3a304412b407950112b43339a25ab4&ack=t
IPI80N06S207AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
152+3.55 EUR
Mindestbestellmenge: 152 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65SS5XKSA1 Infineon-IKW75N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc2833db31af
IKW75N65SS5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/145ns
Switching Energy: 450µJ (on), 750µJ (off)
Test Condition: 400V, 75A, 5.6Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.17 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IKW75N65RH5XKSA1 Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac
IKW75N65RH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/180ns
Switching Energy: 360µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 277 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.18 EUR
30+10.66 EUR
120+9.01 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IDK12G65C5XTMA1 INFNS29239-1.pdf?t.download=true&u=5oefqw
IDK12G65C5XTMA1
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE
auf Bestellung 1437 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
103+6.18 EUR
Mindestbestellmenge: 103 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CYW170-01SXC
CYW170-01SXC
Hersteller: Infineon Technologies
Description: IC CLK ZDB 133MHZ 8SOIC
Input: Clock
Output: Clock
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: 8-SOIC
auf Bestellung 6567 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
189+3.33 EUR
Mindestbestellmenge: 189 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPP60R180C7 Infineon-IPP60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d483fe4ba707b
Hersteller: Infineon Technologies
Description: 13A, 600V, 0.18OHM, N-CHANNEL MO
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 260µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR35PNH6433 INFNS19243-1.pdf?t.download=true&u=5oefqw
BCR35PNH6433
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCR 35PN H6327 INFNS19243-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4116+0.14 EUR
Mindestbestellmenge: 4116 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR39PN-E6327 INFNS19243-1.pdf?t.download=true&u=5oefqw
BCR39PN-E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN/PNP
Packaging: Bulk
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2077+0.27 EUR
Mindestbestellmenge: 2077 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DF200R12PT4B6BOSA1 Infineon-DF200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e34322f5f8d
DF200R12PT4B6BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 300A 1100W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+446.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FD200R12PT4B6BOSA1 Infineon-FD200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e3a8c455fa0
FD200R12PT4B6BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 300A 1100W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+342.66 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FS200R07PE4BOSA1 Infineon-FS200R07PE4-DS-v02_01-en_de.pdf?fileId=db3a304333227b5e01335963ee7908dd
FS200R07PE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 200A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+260.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF200R12KT3EHOSA1 Infineon-FF200R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a30431441fb5d0114d51250e31b88
FF200R12KT3EHOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 351 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+202.18 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
F3L200R07PE4BOSA1 Infineon-F3L200R07PE4-DS-v02_00-en_de.pdf?fileId=db3a30432f0d175c012f1060f84238f4
F3L200R07PE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 200A 680W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+233.61 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DF200R12PT4B6BOSA1 Infineon-DF200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e34322f5f8d
DF200R12PT4B6BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 300A 1100W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS200R12KT4RB11BOSA1 Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6
FS200R12KT4RB11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 280A 1000W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+237.61 EUR
10+193.36 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FS200R12PT4PBOSA1 Infineon-FS200R12PT4P-DS-v02_00-EN.pdf?fileId=5546d46253f6505701542e3844cf3eda
FS200R12PT4PBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+367.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BAS7006WH6327XTSA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7006WH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT323
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT323
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
85+0.25 EUR
121+0.18 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPU02N60S5XK Infineon-SPD_U02N60S5-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42c91374727
SPU02N60S5XK
Hersteller: Infineon Technologies
Description: SPU02N60 - 600V COOLMOS N-CHANNE
Packaging: Bulk
Part Status: Active
auf Bestellung 1493 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
434+1.32 EUR
Mindestbestellmenge: 434 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPU02N60S5 Infineon-SPD_U02N60S5-DS-v02_05-en.pdf?fileId=db3a304412b407950112b42c91374727
Hersteller: Infineon Technologies
Description: SPU02N60 - 600V COOLMOS N-CHANNE
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO251-3
Vgs(th) (Max) @ Id: 5.5V @ 80µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS140WE6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS140WE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 40V 120MA SOD323-2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS7006E6433HTMA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7006E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS7006E6433HTMA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7006E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS70-06E6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70-06E6327
Hersteller: Infineon Technologies
Description: BAS70 - HIGH SPEED SWITCHING, CL
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAS70-06E6433 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70-06E6433
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT23
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Reverse Recovery Time (trr): 100 ps
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3328+0.17 EUR
Mindestbestellmenge: 3328 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IDB18E120 INFNS27247-1.pdf?t.download=true&u=5oefqw
IDB18E120
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 31A TO263
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 18 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PG-TO263-3-2
Current - Average Rectified (Io): 31A
Technology: Standard
Reverse Recovery Time (trr): 195 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 21100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
265+2.18 EUR
Mindestbestellmenge: 265 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR119E6327HTSA1 bcr119series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144057767402f3
BCR119E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: PG-SOT23
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Resistors Included: R1 Only
auf Bestellung 378000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8290+0.071 EUR
Mindestbestellmenge: 8290 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R600P6 INFNS27707-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 600V, 0.6OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPA60R180C7 Infineon-IPA60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fd65089d0627d
IPA60R180C7
Hersteller: Infineon Technologies
Description: 9A, 600V, 0.18OHM, N-CHANNEL MOS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 214 374 375 376 377 378 379 380 381 382 383 384 428 642 856 1070 1284 1498 1712 1926 2140 2141  [ Nächste Seite >> ]