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BAS40B5000 BAS40B5000 Infineon Technologies INFNS09504-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
Packaging: Bulk
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BAS70B5000 BAS70B5000 Infineon Technologies INFNS09505-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 70V 70MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io): 70mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
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IPP230N06L3 G IPP230N06L3 G Infineon Technologies IP%28B%2CP%29230N06L3_G.pdf Description: MOSFET N-CH 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
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BTS50121EKAXUMA1 BTS50121EKAXUMA1 Infineon Technologies INFNS17245-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE SMART HIGH SIDE SWITC
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 12mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-43-EP
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
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TLE4271-2G TLE4271-2G Infineon Technologies Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f Description: IC REG LINEAR VOLT TLE4271
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BSM15GP120B2BOSA1 Infineon Technologies Description: IGBT MODULE 1200V
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 180 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 35 A
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 15A
Operating Temperature: -40°C ~ 125°C
Configuration: Full Bridge
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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ICE3BR0680JZ ICE3BR0680JZ Infineon Technologies INFNS17394-1.pdf?t.download=true&u=5oefqw Description: OFF-LINE SMPS CURRENT MODE CONTR
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Bulk
Power (Watts): 82 W
Part Status: Active
Control Features: Soft Start
Voltage - Start Up: 17 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
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ICE3B1065FKLA1 ICE3B1065FKLA1 Infineon Technologies CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 67kHz
Duty Cycle: 72%
Operating Temperature: -25°C ~ 130°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Power (Watts): 32 W
Part Status: Obsolete
Control Features: Soft Start
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-8
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
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2EDL8123GXUMA1 2EDL8123GXUMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side and Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 45ns, 45ns
Supplier Device Package: PG-VDSON-8-4
High Side Voltage - Max (Bootstrap): 90 V
Input Type: Non-Inverting
Voltage - Supply: 8V ~ 17V
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2EDL8123GXUMA1 2EDL8123GXUMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8124GXUMA1 2EDL8124GXUMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8124GXUMA1 2EDL8124GXUMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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TLE49613LHALA1 TLE49613LHALA1 Infineon Technologies Infineon-TLE4961_3L-DS-v01_00-en.pdf?fileId=db3a30433899edae0138c3c365920311 Description: MAGNETIC SWITCH LATCH SSO-3-2
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 10.4mT Trip, -10.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Drain
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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TLE49613LHALA1 TLE49613LHALA1 Infineon Technologies Infineon-TLE4961_3L-DS-v01_00-en.pdf?fileId=db3a30433899edae0138c3c365920311 Description: MAGNETIC SWITCH LATCH SSO-3-2
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 10.4mT Trip, -10.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Drain
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TLE49611LHALA1 TLE49611LHALA1 Infineon Technologies Infineon-TLE4961_1L-DS-v01_00-en.pdf?fileId=db3a3043397219b6013977b435505444 Description: MAGNETIC SWITCH LATCH SSO-3-2
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 3.5mT Trip, -3.5mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Drain
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Tape & Box (TB)
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TLE49611LHALA1 TLE49611LHALA1 Infineon Technologies Infineon-TLE4961_1L-DS-v01_00-en.pdf?fileId=db3a3043397219b6013977b435505444 Description: MAGNETIC SWITCH LATCH SSO-3-2
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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EVALM16ED2230B1TOBO1 EVALM16ED2230B1TOBO1 Infineon Technologies Infineon-EVAL-M1-6ED2230-B1-ApplicationNotes-v01_03-EN.pdf?fileId=5546d4626cb27db2016d053aea2b11b0 Description: EVAL BOARD FOR M16ED2230B1
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s)
Utilized IC / Part: M16ED2230B1
Supplied Contents: Board(s)
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BFP843H6327 BFP843H6327 Infineon Technologies INFNS27659-1.pdf?t.download=true&u=5oefqw Description: ULTRA LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Supplier Device Package: SOT-343
Part Status: Active
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BSZ070N08LS5ATMA1 BSZ070N08LS5ATMA1 Infineon Technologies Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d Description: MOSFET N-CH 80V 74A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
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IAUC70N08S5N074ATMA1 IAUC70N08S5N074ATMA1 Infineon Technologies Infineon-IAUC70N08S5N074-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a531f6aa0013 Description: MOSFET N-CH 80V 70A 8TDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
Qualification: AEC-Q101
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IAUC70N08S5N074ATMA1 IAUC70N08S5N074ATMA1 Infineon Technologies Infineon-IAUC70N08S5N074-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a531f6aa0013 Description: MOSFET N-CH 80V 70A 8TDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
Qualification: AEC-Q101
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IPP070N08N3G IPP070N08N3G Infineon Technologies INFN-S-A0001300127-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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IPP070N08N3 G IPP070N08N3 G Infineon Technologies %28IPP%2CIPI%2CIPB%290x0N08N3_G.pdf Description: MOSFET N-CH 80V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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TD500N16KOFHPSA2 TD500N16KOFHPSA2 Infineon Technologies Infineon-TT500N-DS-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d Description: SCR MODULE 1800V 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
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TLE4927CE6547HAMA1 TLE4927CE6547HAMA1 Infineon Technologies TLE4927C_Br.pdf Description: MAGNETIC SWITCH HALL EFF SSO-3
Part Status: Not For New Designs
Supplier Device Package: PG-SSO-3-91
Mounting Type: Through Hole
Package / Case: 3-SSIP Module
Packaging: Bulk
Qualification: AEC-Q100
Grade: Automotive
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TLE4927CE6547 TLE4927CE6547 Infineon Technologies INFNS30565-1.pdf?t.download=true&u=5oefqw Description: TLE4927 - MAGNETIC SPEED SENSOR
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: Digital
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
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TLE4927CNE6547HAMA1 TLE4927CNE6547HAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAG SWITCH HALL EFFECT SSO-3
Packaging: Bulk
Package / Case: 3-SSIP Module
Mounting Type: Through Hole
Supplier Device Package: PG-SSO-3-91
Grade: Automotive
Qualification: AEC-Q100
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TLE42694G Infineon Technologies Infineon-TLE42694-DS-v01_30-EN.pdf?fileId=5546d46259d9a4bf0159f97a31993e65 Description: IC REG LIN FIXED POS LDO REG 5V
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BFQ19SH6359XTMA1 BFQ19SH6359XTMA1 Infineon Technologies INFNS30117-1.pdf?t.download=true&u=5oefqw Description: BFQ19S - RF SMALL SIGNAL BIPOLAR
Supplier Device Package: PG-SOT89-4-2
Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Frequency - Transition: 5.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 120mA
Power - Max: 1W
Gain: 11.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
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IPI60R385CPXKSA1 IPI60R385CPXKSA1 Infineon Technologies IPI60R385CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d946f48a3 Description: MOSFET N-CH 650V 9A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
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IR3563AMTRPBF IR3563AMTRPBF Infineon Technologies IR3563A.pdf Description: IC REG CTRLR INTEL 1OUT 48QFN
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TLE4728G TLE4728G Infineon Technologies Infineon-TLE4678-DS-v01_20-EN.pdf?t.download=true&u=5oefqw Description: STEPPER MOTOR CONTROLLER, 1A
Part Status: Active
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: PG-DSO-24-9
Voltage - Load: 5V ~ 16V
Technology: Bipolar
Applications: General Purpose
Voltage - Supply: 5V ~ 16V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 110°C
Interface: Logic
Current - Output: 800mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
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IRFSL7540PBF IRFSL7540PBF Infineon Technologies irfs7540pbf.pdf?fileId=5546d462533600a4015364c3f7c229cf Description: MOSFET N-CH 60V 110A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
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SLJ52ACA150A1VQFN32XUMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IDENT 32VQFN
Packaging: Bulk
Part Status: Discontinued at Digi-Key
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IGW50N60T IGW50N60T Infineon Technologies INFN-S-A0001299822-1.pdf?t.download=true&u=5oefqw Description: IGW50N60 - DISCRETE IGBT WITHOUT
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Power - Max: 333 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 90 A
Part Status: Active
Gate Charge: 310 nC
Test Condition: 400V, 50A, 7Ohm, 15V
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Td (on/off) @ 25°C: 26ns/299ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
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EVALM5IMZ120RSICTOBO1 EVALM5IMZ120RSICTOBO1 Infineon Technologies Infineon-Evaluation_board_EVAL-M5-IMZ120R-SiC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462700c0ae60170a08dcc430f53 Description: EVAL BOARD FOR M5IMZ120RSIC
Packaging: Bulk
Function: MOSFET
Type: Interface
Contents: Board(s)
Utilized IC / Part: M5IMZ120RSIC
Supplied Contents: Board(s)
Part Status: Active
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ESD202B1CSP01005XTSA1 ESD202B1CSP01005XTSA1 Infineon Technologies Infineon-ESD202-B1-CSP01005-DS-v01_03-EN.pdf?fileId=5546d4624cb7f111014d435043872914 Description: TVS DIODE 5.5VWM 12VC P/PGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power - Peak Pulse: 36W
Power Line Protection: No
Part Status: Active
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ESD202B1CSP01005XTSA1 ESD202B1CSP01005XTSA1 Infineon Technologies Infineon-ESD202-B1-CSP01005-DS-v01_03-EN.pdf?fileId=5546d4624cb7f111014d435043872914 Description: TVS DIODE 5.5VWM 12VC P/PGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power - Peak Pulse: 36W
Power Line Protection: No
Part Status: Active
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BSC0703LSATMA1 BSC0703LSATMA1 Infineon Technologies Infineon-BSC0703LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae6017086e9635e1d29 Description: MOSFET N-CH 60V 15A/64A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
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BSC0703LSATMA1 BSC0703LSATMA1 Infineon Technologies Infineon-BSC0703LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae6017086e9635e1d29 Description: MOSFET N-CH 60V 15A/64A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
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IPI052NE7N3G IPI052NE7N3G Infineon Technologies INFN-S-A0001300366-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
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IPP052NE7N3G IPP052NE7N3G Infineon Technologies INFN-S-A0001300366-1.pdf?t.download=true&u=5oefqw Description: IPP052NE7 - 12V-300V N-CHANNEL P
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TLE42754D Infineon Technologies Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab Description: IC REG LINEAR VOLT TLE42754
Packaging: Bulk
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 25 mA
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TLE4997E2 TLE4997E2 Infineon Technologies Infineon-TLE4997-DS-v02_08-en.pdf?fileId=db3a30431ce5fb52011d3e4c832a2594 Description: PROGRAMMABLE HALL EFFECT SENSOR
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SIGC121T60NR2CX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
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SIGC121T60NR2CX1SA2 Infineon Technologies SIGC121T60NR2C_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
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SIGC121T60NR2CX1SA3 Infineon Technologies SIGC121T60NR2C_ed2_11-28-03.pdf Description: IGBT 3 CHIP 600V WAFER
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BTS114AE3045ANTMA1 BTS114AE3045ANTMA1 Infineon Technologies INFNS05896-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Supplier Device Package: PG-TO220-3-5
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 9892 Stücke:
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IGT60R070D1ATMA1 IGT60R070D1ATMA1 Infineon Technologies Infineon-IGT60R070D1-DS-v02_01-EN.pdf?fileId=5546d46265f064ff016686028dd56526 Description: GANFET N-CH 600V 31A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Obsolete
Supplier Device Package: PG-HSOF-8-3
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Power Dissipation (Max): 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
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BC847CWE6778 BC847CWE6778 Infineon Technologies INFNS16507-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
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CY8C4245AZI-M445 CY8C4245AZI-M445 Infineon Technologies download Description: IC MCU 32BIT 32KB FLASH 64TQFP
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 51
Supplier Device Package: 64-TQFP (10x10)
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IPB03N03LAG IPB03N03LAG Infineon Technologies INFNS08712-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7027 pF @ 15 V
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IPB03N03LBG IPB03N03LBG Infineon Technologies INFNS08712-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7624 pF @ 15 V
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SAB80C166MT3DDBXUMA1 SAB80C166MT3DDBXUMA1 Infineon Technologies INFND00010-603.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Number of I/O: 76
Part Status: Active
Supplier Device Package: P-MQFP-100-2
Peripherals: WDT
Connectivity: ASC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 10x10b SAR
Core Processor: C166
Program Memory Type: Mask ROM
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
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SAB-80C166-M-T3DD Infineon Technologies INFND00010-603.pdf?t.download=true&u=5oefqw Description: LEGACY 16-BIT MCU
Core Size: 16-Bit
Data Converters: A/D 10x10b SAR
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Speed: 20MHz
Number of I/O: 76
Part Status: Active
Supplier Device Package: P-MQFP-100-2
Peripherals: POR, PWM, WDT
Connectivity: ASC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
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BTS611L1E3128A BTS611L1E3128A Infineon Technologies INFN-S-A0000110231-1.pdf?t.download=true&u=5oefqw Description: SMART TWO CHANNEL HIGH-SIDE POWE
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Supplier Device Package: P-TO263-7-2
Ratio - Input:Output: 1:1
Current - Output (Max): 4.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Input Type: Non-Inverting
Rds On (Typ): 160mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: Logic
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Produkt ist nicht verfügbar
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BSC019N04LSATMA1 BSC019N04LSATMA1 Infineon Technologies Infineon-BSC019N04LS-DS-v02_01-EN.pdf?fileId=db3a304342371bb001424b8aca0c6fc4 Description: MOSFET N-CH 40V 27A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 20 V
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11+1.92 EUR
100+1.27 EUR
500+1 EUR
1000+0.92 EUR
2000+0.84 EUR
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TDA7116FHTMA1 TDA7116FHTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TX IC ASK 866-870MHZ 10TFSOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: PG-TSSOP-10-2
Antenna Connector: PCB, Surface Mount
Current - Transmitting: 14.2mA
Power - Output: 13dBm
Voltage - Supply: 2.1V ~ 4V
Operating Temperature: -40°C ~ 85°C
Data Interface: PCB, Surface Mount
Modulation or Protocol: ASK, FSK
Frequency: 866MHz ~ 870MHz
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TDA7116FHTMA1 TDA7116FHTMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: RF TX IC ASK 866-870MHZ 10TFSOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: PG-TSSOP-10-2
Antenna Connector: PCB, Surface Mount
Current - Transmitting: 14.2mA
Power - Output: 13dBm
Voltage - Supply: 2.1V ~ 4V
Operating Temperature: -40°C ~ 85°C
Data Interface: PCB, Surface Mount
Modulation or Protocol: ASK, FSK
Frequency: 866MHz ~ 870MHz
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BCR148WH6327 BCR148WH6327 Infineon Technologies INFNS17184-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 100 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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BAS40B5000 INFNS09504-1.pdf?t.download=true&u=5oefqw
BAS40B5000
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Qualification: AEC-Q101
Grade: Automotive
Packaging: Bulk
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BAS70B5000 INFNS09505-1.pdf?t.download=true&u=5oefqw
BAS70B5000
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA SOT23-3
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io): 70mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
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IPP230N06L3 G IP%28B%2CP%29230N06L3_G.pdf
IPP230N06L3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
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BTS50121EKAXUMA1 INFNS17245-1.pdf?t.download=true&u=5oefqw
BTS50121EKAXUMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE SMART HIGH SIDE SWITC
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 12mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-43-EP
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
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281+1.98 EUR
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TLE4271-2G Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f
TLE4271-2G
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLT TLE4271
Produkt ist nicht verfügbar
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BSM15GP120B2BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Current - Collector Cutoff (Max): 500 µA
Power - Max: 180 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 35 A
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 15A
Operating Temperature: -40°C ~ 125°C
Configuration: Full Bridge
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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ICE3BR0680JZ INFNS17394-1.pdf?t.download=true&u=5oefqw
ICE3BR0680JZ
Hersteller: Infineon Technologies
Description: OFF-LINE SMPS CURRENT MODE CONTR
Voltage - Breakdown: 800V
Internal Switch(s): Yes
Frequency - Switching: 65kHz
Duty Cycle: 75%
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Packaging: Bulk
Power (Watts): 82 W
Part Status: Active
Control Features: Soft Start
Voltage - Start Up: 17 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Supplier Device Package: PG-DIP-7-1
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Produkt ist nicht verfügbar
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ICE3B1065FKLA1 CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30
ICE3B1065FKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 67kHz
Duty Cycle: 72%
Operating Temperature: -25°C ~ 130°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Power (Watts): 32 W
Part Status: Obsolete
Control Features: Soft Start
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Supplier Device Package: PG-DIP-8
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Topology: Flyback
Output Isolation: Isolated
Produkt ist nicht verfügbar
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2EDL8123GXUMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8123GXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: High-Side and Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 45ns, 45ns
Supplier Device Package: PG-VDSON-8-4
High Side Voltage - Max (Bootstrap): 90 V
Input Type: Non-Inverting
Voltage - Supply: 8V ~ 17V
auf Bestellung 6000 Stücke:
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6000+1.38 EUR
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2EDL8123GXUMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8123GXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
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8+2.87 EUR
10+2.09 EUR
25+1.9 EUR
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2EDL8124GXUMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8124GXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDL8124GXUMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8124GXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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8+2.67 EUR
11+1.93 EUR
25+1.75 EUR
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TLE49613LHALA1 Infineon-TLE4961_3L-DS-v01_00-en.pdf?fileId=db3a30433899edae0138c3c365920311
TLE49613LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SSO-3-2
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 10.4mT Trip, -10.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Drain
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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TLE49613LHALA1 Infineon-TLE4961_3L-DS-v01_00-en.pdf?fileId=db3a30433899edae0138c3c365920311
TLE49613LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SSO-3-2
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 10.4mT Trip, -10.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Drain
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10+2.28 EUR
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12+1.8 EUR
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100+1.43 EUR
500+1.21 EUR
1000+1.13 EUR
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TLE49611LHALA1 Infineon-TLE4961_1L-DS-v01_00-en.pdf?fileId=db3a3043397219b6013977b435505444
TLE49611LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SSO-3-2
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SSO-3-2
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 3.5mT Trip, -3.5mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Latch
Mounting Type: Through Hole
Polarization: South Pole
Output Type: Open Drain
Package / Case: 3-SSIP, SSO-3-02
Features: Temperature Compensated
Packaging: Tape & Box (TB)
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2000+0.84 EUR
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TLE49611LHALA1 Infineon-TLE4961_1L-DS-v01_00-en.pdf?fileId=db3a3043397219b6013977b435505444
TLE49611LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SSO-3-2
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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10+2.28 EUR
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EVALM16ED2230B1TOBO1 Infineon-EVAL-M1-6ED2230-B1-ApplicationNotes-v01_03-EN.pdf?fileId=5546d4626cb27db2016d053aea2b11b0
EVALM16ED2230B1TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR M16ED2230B1
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Contents: Board(s)
Utilized IC / Part: M16ED2230B1
Supplied Contents: Board(s)
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BFP843H6327 INFNS27659-1.pdf?t.download=true&u=5oefqw
BFP843H6327
Hersteller: Infineon Technologies
Description: ULTRA LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Supplier Device Package: SOT-343
Part Status: Active
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1898+0.33 EUR
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BSZ070N08LS5ATMA1 Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d
BSZ070N08LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 74A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
auf Bestellung 19205 Stücke:
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AnzahlPrivatkunde
5+4.94 EUR
10+3.19 EUR
100+2.19 EUR
500+1.76 EUR
1000+1.64 EUR
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IAUC70N08S5N074ATMA1 Infineon-IAUC70N08S5N074-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a531f6aa0013
IAUC70N08S5N074ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 70A 8TDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.86 EUR
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IAUC70N08S5N074ATMA1 Infineon-IAUC70N08S5N074-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a531f6aa0013
IAUC70N08S5N074ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 70A 8TDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 5994 Stücke:
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AnzahlPrivatkunde
7+3.36 EUR
10+2.13 EUR
100+1.43 EUR
500+1.13 EUR
1000+1.05 EUR
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IPP070N08N3G INFN-S-A0001300127-1.pdf?t.download=true&u=5oefqw
IPP070N08N3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
auf Bestellung 609 Stücke:
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400+1.5 EUR
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IPP070N08N3 G %28IPP%2CIPI%2CIPB%290x0N08N3_G.pdf
IPP070N08N3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 80A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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TD500N16KOFHPSA2 Infineon-TT500N-DS-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d
TD500N16KOFHPSA2
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
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TLE4927CE6547HAMA1 TLE4927C_Br.pdf
TLE4927CE6547HAMA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Part Status: Not For New Designs
Supplier Device Package: PG-SSO-3-91
Mounting Type: Through Hole
Package / Case: 3-SSIP Module
Packaging: Bulk
Qualification: AEC-Q100
Grade: Automotive
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96+6.15 EUR
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TLE4927CE6547 INFNS30565-1.pdf?t.download=true&u=5oefqw
TLE4927CE6547
Hersteller: Infineon Technologies
Description: TLE4927 - MAGNETIC SPEED SENSOR
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: Digital
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
Produkt ist nicht verfügbar
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TLE4927CNE6547HAMA1 fundamentals-of-power-semiconductors
TLE4927CNE6547HAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH HALL EFFECT SSO-3
Packaging: Bulk
Package / Case: 3-SSIP Module
Mounting Type: Through Hole
Supplier Device Package: PG-SSO-3-91
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 55176 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
83+6.95 EUR
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TLE42694G Infineon-TLE42694-DS-v01_30-EN.pdf?fileId=5546d46259d9a4bf0159f97a31993e65
Hersteller: Infineon Technologies
Description: IC REG LIN FIXED POS LDO REG 5V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
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BFQ19SH6359XTMA1 INFNS30117-1.pdf?t.download=true&u=5oefqw
BFQ19SH6359XTMA1
Hersteller: Infineon Technologies
Description: BFQ19S - RF SMALL SIGNAL BIPOLAR
Supplier Device Package: PG-SOT89-4-2
Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Frequency - Transition: 5.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Voltage - Collector Emitter Breakdown (Max): 15V
Current - Collector (Ic) (Max): 120mA
Power - Max: 1W
Gain: 11.5dB
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
Produkt ist nicht verfügbar
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IPI60R385CPXKSA1 IPI60R385CP_rev2.1.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d946f48a3
IPI60R385CPXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 9A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 5.2A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 340µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 100 V
auf Bestellung 22000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
200+2.75 EUR
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IR3563AMTRPBF IR3563A.pdf
IR3563AMTRPBF
Hersteller: Infineon Technologies
Description: IC REG CTRLR INTEL 1OUT 48QFN
Produkt ist nicht verfügbar
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TLE4728G Infineon-TLE4678-DS-v01_20-EN.pdf?t.download=true&u=5oefqw
TLE4728G
Hersteller: Infineon Technologies
Description: STEPPER MOTOR CONTROLLER, 1A
Part Status: Active
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: PG-DSO-24-9
Voltage - Load: 5V ~ 16V
Technology: Bipolar
Applications: General Purpose
Voltage - Supply: 5V ~ 16V
Output Configuration: Half Bridge (4)
Operating Temperature: -40°C ~ 110°C
Interface: Logic
Current - Output: 800mA
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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IRFSL7540PBF irfs7540pbf.pdf?fileId=5546d462533600a4015364c3f7c229cf
IRFSL7540PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 110A TO262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 65A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4555 pF @ 25 V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
170+3.18 EUR
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SLJ52ACA150A1VQFN32XUMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: IDENT 32VQFN
Packaging: Bulk
Part Status: Discontinued at Digi-Key
auf Bestellung 4745 Stücke:
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AnzahlPrivatkunde
187+3.37 EUR
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IGW50N60T INFN-S-A0001299822-1.pdf?t.download=true&u=5oefqw
IGW50N60T
Hersteller: Infineon Technologies
Description: IGW50N60 - DISCRETE IGBT WITHOUT
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Bulk
Power - Max: 333 W
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 90 A
Part Status: Active
Gate Charge: 310 nC
Test Condition: 400V, 50A, 7Ohm, 15V
Switching Energy: 1.2mJ (on), 1.4mJ (off)
Td (on/off) @ 25°C: 26ns/299ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Produkt ist nicht verfügbar
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EVALM5IMZ120RSICTOBO1 Infineon-Evaluation_board_EVAL-M5-IMZ120R-SiC-ApplicationNotes-v01_00-EN.pdf?fileId=5546d462700c0ae60170a08dcc430f53
EVALM5IMZ120RSICTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR M5IMZ120RSIC
Packaging: Bulk
Function: MOSFET
Type: Interface
Contents: Board(s)
Utilized IC / Part: M5IMZ120RSIC
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 2 Stücke:
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AnzahlPrivatkunde
1+1402.53 EUR
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ESD202B1CSP01005XTSA1 Infineon-ESD202-B1-CSP01005-DS-v01_03-EN.pdf?fileId=5546d4624cb7f111014d435043872914
ESD202B1CSP01005XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 12VC P/PGWLL22
Packaging: Tape & Reel (TR)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power - Peak Pulse: 36W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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ESD202B1CSP01005XTSA1 Infineon-ESD202-B1-CSP01005-DS-v01_03-EN.pdf?fileId=5546d4624cb7f111014d435043872914
ESD202B1CSP01005XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 5.5VWM 12VC P/PGWLL22
Packaging: Cut Tape (CT)
Package / Case: 01005 (0402 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 6.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: P/PG-WLL-2-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12V (Typ)
Power - Peak Pulse: 36W
Power Line Protection: No
Part Status: Active
auf Bestellung 21303 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
112+0.19 EUR
233+0.09 EUR
559+0.038 EUR
587+0.036 EUR
1000+0.033 EUR
5000+0.032 EUR
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BSC0703LSATMA1 Infineon-BSC0703LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae6017086e9635e1d29
BSC0703LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 15A/64A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Produkt ist nicht verfügbar
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BSC0703LSATMA1 Infineon-BSC0703LS-DataSheet-v02_02-EN.pdf?fileId=5546d462700c0ae6017086e9635e1d29
BSC0703LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 15A/64A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 2.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
auf Bestellung 6753 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.99 EUR
12+1.77 EUR
100+1.39 EUR
500+1.14 EUR
1000+0.9 EUR
2000+0.84 EUR
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IPI052NE7N3G INFN-S-A0001300366-1.pdf?t.download=true&u=5oefqw
IPI052NE7N3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 37.5 V
auf Bestellung 396 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
249+2.23 EUR
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IPP052NE7N3G INFN-S-A0001300366-1.pdf?t.download=true&u=5oefqw
IPP052NE7N3G
Hersteller: Infineon Technologies
Description: IPP052NE7 - 12V-300V N-CHANNEL P
Produkt ist nicht verfügbar
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TLE42754D Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLT TLE42754
Packaging: Bulk
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 450mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 25 mA
Produkt ist nicht verfügbar
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TLE4997E2 Infineon-TLE4997-DS-v02_08-en.pdf?fileId=db3a30431ce5fb52011d3e4c832a2594
TLE4997E2
Hersteller: Infineon Technologies
Description: PROGRAMMABLE HALL EFFECT SENSOR
Produkt ist nicht verfügbar
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SIGC121T60NR2CX7SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Produkt ist nicht verfügbar
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SIGC121T60NR2CX1SA2 SIGC121T60NR2C_ed2_11-28-03.pdf
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
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SIGC121T60NR2CX1SA3 SIGC121T60NR2C_ed2_11-28-03.pdf
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Produkt ist nicht verfügbar
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BTS114AE3045ANTMA1 INFNS05896-1.pdf?t.download=true&u=5oefqw
BTS114AE3045ANTMA1
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Supplier Device Package: PG-TO220-3-5
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 9892 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
93+5.81 EUR
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IGT60R070D1ATMA1 Infineon-IGT60R070D1-DS-v02_01-EN.pdf?fileId=5546d46265f064ff016686028dd56526
IGT60R070D1ATMA1
Hersteller: Infineon Technologies
Description: GANFET N-CH 600V 31A 8HSOF
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): -10V
Part Status: Obsolete
Supplier Device Package: PG-HSOF-8-3
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Power Dissipation (Max): 125W (Tc)
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BC847CWE6778 INFNS16507-1.pdf?t.download=true&u=5oefqw
BC847CWE6778
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
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CY8C4245AZI-M445 download
CY8C4245AZI-M445
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 64TQFP
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
Number of I/O: 51
Supplier Device Package: 64-TQFP (10x10)
auf Bestellung 100 Stücke:
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100+6.47 EUR
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IPB03N03LAG INFNS08712-1.pdf?t.download=true&u=5oefqw
IPB03N03LAG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7027 pF @ 15 V
auf Bestellung 703 Stücke:
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IPB03N03LBG INFNS08712-1.pdf?t.download=true&u=5oefqw
IPB03N03LBG
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 55A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 100µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7624 pF @ 15 V
auf Bestellung 1000 Stücke:
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AnzahlPrivatkunde
185+2.99 EUR
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SAB80C166MT3DDBXUMA1 INFND00010-603.pdf?t.download=true&u=5oefqw
SAB80C166MT3DDBXUMA1
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Number of I/O: 76
Part Status: Active
Supplier Device Package: P-MQFP-100-2
Peripherals: WDT
Connectivity: ASC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 10x10b SAR
Core Processor: C166
Program Memory Type: Mask ROM
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
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SAB-80C166-M-T3DD INFND00010-603.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: LEGACY 16-BIT MCU
Core Size: 16-Bit
Data Converters: A/D 10x10b SAR
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 1K x 8
Speed: 20MHz
Number of I/O: 76
Part Status: Active
Supplier Device Package: P-MQFP-100-2
Peripherals: POR, PWM, WDT
Connectivity: ASC, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
Produkt ist nicht verfügbar
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BTS611L1E3128A INFN-S-A0000110231-1.pdf?t.download=true&u=5oefqw
BTS611L1E3128A
Hersteller: Infineon Technologies
Description: SMART TWO CHANNEL HIGH-SIDE POWE
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Supplier Device Package: P-TO263-7-2
Ratio - Input:Output: 1:1
Current - Output (Max): 4.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Input Type: Non-Inverting
Rds On (Typ): 160mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: Logic
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Produkt ist nicht verfügbar
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BSC019N04LSATMA1 Infineon-BSC019N04LS-DS-v02_01-EN.pdf?fileId=db3a304342371bb001424b8aca0c6fc4
BSC019N04LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 27A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 20 V
auf Bestellung 4115 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.03 EUR
11+1.92 EUR
100+1.27 EUR
500+1 EUR
1000+0.92 EUR
2000+0.84 EUR
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TDA7116FHTMA1 fundamentals-of-power-semiconductors
TDA7116FHTMA1
Hersteller: Infineon Technologies
Description: RF TX IC ASK 866-870MHZ 10TFSOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: PG-TSSOP-10-2
Antenna Connector: PCB, Surface Mount
Current - Transmitting: 14.2mA
Power - Output: 13dBm
Voltage - Supply: 2.1V ~ 4V
Operating Temperature: -40°C ~ 85°C
Data Interface: PCB, Surface Mount
Modulation or Protocol: ASK, FSK
Frequency: 866MHz ~ 870MHz
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TDA7116FHTMA1 fundamentals-of-power-semiconductors
TDA7116FHTMA1
Hersteller: Infineon Technologies
Description: RF TX IC ASK 866-870MHZ 10TFSOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Supplier Device Package: PG-TSSOP-10-2
Antenna Connector: PCB, Surface Mount
Current - Transmitting: 14.2mA
Power - Output: 13dBm
Voltage - Supply: 2.1V ~ 4V
Operating Temperature: -40°C ~ 85°C
Data Interface: PCB, Surface Mount
Modulation or Protocol: ASK, FSK
Frequency: 866MHz ~ 870MHz
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BCR148WH6327 INFNS17184-1.pdf?t.download=true&u=5oefqw
BCR148WH6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 100 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Produkt ist nicht verfügbar
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