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IKW30N65NL5 IKW30N65NL5 Infineon Technologies INFN-S-A0000241585-1.pdf?t.download=true&u=5oefqw Description: IKW30N65 - DISCRETE IGBT WITH AN
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F3L400R10W3S7B11BPSA1 F3L400R10W3S7B11BPSA1 Infineon Technologies Infineon-F3L400R10W3S7_B11-DataSheet-v03_00-EN.pdf?fileId=5546d462712ef9b701717e23fe8d2713 Description: IGBT MODULE LOW POWER EASY
Input Capacitance (Cies) @ Vce: 25.2 nF @ 25 V
Current - Collector Cutoff (Max): 70 µA
Voltage - Collector Emitter Breakdown (Max): 950 V
IGBT Type: Trench
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FF1200R17IP5PBPSA1 FF1200R17IP5PBPSA1 Infineon Technologies Infineon-FF1200R17IP5P-DataSheet-v03_00-EN.pdf?fileId=5546d4627448fb2b017457d84aae414b Description: IGBT MODULE 1700V 1200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
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IPB080N03LGATMA1 IPB080N03LGATMA1 Infineon Technologies IPB%2CIPP080N03LG.pdf Description: MOSFET N-CH 30V 50A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
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IPB080N03L G IPB080N03L G Infineon Technologies INFNS16326-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
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SPB08N03L SPB08N03L Infineon Technologies Infineon-SPB20N60S5-DS-v02_03-en.pdf?fileId=db3a304412b407950112b42ca0ff473e Description: N-CHANNEL POWER MOSFET
Part Status: Active
Packaging: Bulk
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IPB080N03LG IPB080N03LG Infineon Technologies INFNS16326-1.pdf?t.download=true&u=5oefqw Description: OPTLMOS N-CHANNEL POWER MOSFET
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 250µA
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TLV493DB1B6HTSA1 Infineon Technologies Infineon-TLV493D-A1B6-DataSheet-v01_10-EN.pdf?fileId=5546d462525dbac40152a6b85c760e80 Description: IC 3D MAGN SENSOR TSOP6-6
Part Status: Discontinued at Digi-Key
Packaging: Bulk
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KP214N2611 KP214N2611 Infineon Technologies INFNS15304-1.pdf?t.download=true&u=5oefqw Description: SENSOR 16.68PSIA 4.65V DSOF8
Part Status: Active
Port Style: No Port
Supplier Device Package: PG-DSOF-8-16
Applications: Board Mount
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 125°C (TA)
Accuracy: ±0.65PSI (4.50kPa)
Pressure Type: Absolute
Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa)
Output: 0.18V ~ 4.65V
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Packaging: Bulk
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ICE3PCS02GXUMA2 ICE3PCS02GXUMA2 Infineon Technologies INFN-S-A0002955532-1.pdf?t.download=true&u=5oefqw Description: ICE3PCS02 - PFC-CCM (CONTINUOUS
Current - Startup: 380 µA
Part Status: Active
Supplier Device Package: PG-DSO-8-6
Mode: Continuous Conduction (CCM)
Frequency - Switching: 21kHz ~ 100kHz
Voltage - Supply: 11V ~ 25V
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
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IRLC8256ED Infineon Technologies Description: MOSFET N-CH WAFER
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IR3897MTRPBF IR3897MTRPBF Infineon Technologies ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813 Description: IC REG BUCK ADJUSTABLE 4A 16PQFN
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Synchronous Rectifier: Yes
Supplier Device Package: 16-PowerQFN
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
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IR3897MTRPBF IR3897MTRPBF Infineon Technologies ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813 Description: IC REG BUCK ADJUSTABLE 4A 16PQFN
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Synchronous Rectifier: Yes
Supplier Device Package: 16-PowerQFN
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Cut Tape (CT)
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IR3898MTRPBF IR3898MTRPBF Infineon Technologies ir3898m.pdf?fileId=5546d462533600a4015355d5ebb01815 Description: IC REG BUCK ADJ 6A 16POWERQFN
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Synchronous Rectifier: Yes
Supplier Device Package: 16-PowerQFN
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 6A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
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IR3898MTRPBF IR3898MTRPBF Infineon Technologies ir3898m.pdf?fileId=5546d462533600a4015355d5ebb01815 Description: IC REG BUCK ADJ 6A 16POWERQFN
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Synchronous Rectifier: Yes
Supplier Device Package: 16-PowerQFN
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 6A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Cut Tape (CT)
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IR3899MTRPBF IR3899MTRPBF Infineon Technologies ir3899m.pdf?fileId=5546d462533600a4015355d5f3f71817 Description: IC REG BUCK ADJ 9A 16PQFN
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Synchronous Rectifier: Yes
Supplier Device Package: 16-PQFN (4x5)
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 9A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
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IR3894MTRPBF IR3894MTRPBF Infineon Technologies ir3894m.pdf?fileId=5546d462533600a4015355d5d4d6180f Description: IC REG BUCK ADJ 12A 16PWRQFN
Synchronous Rectifier: Yes
Supplier Device Package: 16-PowerQFN
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
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CY7C1480V33-200AXC CY7C1480V33-200AXC Infineon Technologies Infineon-CY7C1480BV33_CY7C1482BV33_72_MBIT_(2M_X_36_4M_X_18)_PIPELINED_SYNC_SRAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec45b3739ca Description: IC SRAM 72MBIT PARALLEL 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Access Time: 3 ns
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
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BC817K-25WE6327 BC817K-25WE6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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BC817K-16WH6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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BC817K-16E6327 BC817K-16E6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
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BC817K-25E6327 BC817K-25E6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
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BC817K-25WH6327 BC817K-25WH6327 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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BC817K-25WH6433 BC817K-25WH6433 Infineon Technologies INFNS16504-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
Package / Case: SC-70, SOT-323
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
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SIDC07D60AF6X1SA1 Infineon Technologies SIDC07D60AF6_L4294M.pdf?folderId=db3a304412b407950112b435f0da6425&fileId=db3a304412b407950112b435f1586426 Description: DIODE GP 600V 22.5A WAFER
Current - Average Rectified (Io): 22.5A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
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IRSM515-055DA IRSM515-055DA Infineon Technologies irsm505-055.pdf?fileId=5546d462533600a40153567bf5dc287d Description: IC HALF BRIDGE DRIVER 2.4A 23DIP
Part Status: Discontinued at Digi-Key
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 400V (Max)
Technology: UMOS
Current - Peak Output: 15A
Current - Output / Channel: 2.4A
Applications: AC Motors
Rds On (Typ): 1.3Ohm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Features: Bootstrap Circuit
Packaging: Bulk
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IFX1117MEV33 IFX1117MEV33 Infineon Technologies INFNS16936-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN 3.3V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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IFX1117MEV IFX1117MEV Infineon Technologies INFNS16936-1.pdf?t.download=true&u=5oefqw Description: IFX1117 - LINEAR VOLTAGE REGULAT
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 1.4V @ 1A
PSRR: 70dB (120Hz)
Voltage - Output (Min/Fixed): 1.25V
Voltage - Output (Max): 13.6V
Supplier Device Package: PG-SOT223-4
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C (TJ)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
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IFX1117MEV33HTMA1 IFX1117MEV33HTMA1 Infineon Technologies IFX1117_Rev1.0_2-24-11.pdf Description: IC REG LIN 3.3V 1A SOT223-4-21
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 3.3V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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IPT60R075CFD7XTMA1 IPT60R075CFD7XTMA1 Infineon Technologies Infineon-IPT60R075CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a0edb30e3 Description: MOSFET N-CH 600V 33A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
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IPD35N10S3L-26 IPD35N10S3L-26 Infineon Technologies INFNS16590-1.pdf?t.download=true&u=5oefqw Description: IPD35N10 - 75V-100V N-CHANNEL AU
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IPD60R1K0CEAUMA1 IPD60R1K0CEAUMA1 Infineon Technologies Infineon-IPD60R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94 Description: MOSFET N-CH 600V 6.8A 61W TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
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100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
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TLE4269GL TLE4269GL Infineon Technologies Infineon-TLE4269-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f96807553e57 Description: IC REG LIN FIXED POS LDO REG 5V
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-20
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
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DDB6U205N16LHOSA1 DDB6U205N16LHOSA1 Infineon Technologies Infineon-DDB6U205N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4314e925403 Description: DIODE MODULE GP 1600V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
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BTC50010-1TAA Infineon Technologies INFN-S-A0001300279-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER PERIPHL DRIVER
Part Status: Active
Fault Protection: Over Voltage
Supplier Device Package: PG-TO-263-7-8
Ratio - Input:Output: 1:1
Current - Output (Max): 30A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 18V
Input Type: Non-Inverting
Rds On (Typ): 900µOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Features: Load Discharge
Packaging: Bulk
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BGSA20VGL8E6327XTSA1 BGSA20VGL8E6327XTSA1 Infineon Technologies Infineon-BGSA20VGL8-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f9201722cfc21123da1 Description: IC RF SWITCH SPST 6GHZ TSNP8-1
Supplier Device Package: PG-TSNP-8-1
Frequency Range: 6GHz
Voltage - Supply: 1.65V ~ 3.6V
RF Type: CDMA, EDGE, LTE, W-CDMA
Circuit: SPST
Mounting Type: Surface Mount
Package / Case: 8-XFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BGSA20UGL8E6327XTSA1 BGSA20UGL8E6327XTSA1 Infineon Technologies Infineon-BGSA20UGL8-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f9201722cfc2b923da4 Description: IC RF ANT DEVICE 10TSLP
Packaging: Tape & Reel (TR)
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BGSA20UGL8E6327XTSA1 BGSA20UGL8E6327XTSA1 Infineon Technologies Infineon-BGSA20UGL8-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f9201722cfc2b923da4 Description: IC RF ANT DEVICE 10TSLP
Packaging: Cut Tape (CT)
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30+0.6 EUR
33+0.54 EUR
100+0.47 EUR
250+0.43 EUR
500+0.41 EUR
1000+0.4 EUR
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BGSA20GN10E6327XTSA1 BGSA20GN10E6327XTSA1 Infineon Technologies Infineon-RF Front End Solutions for Mobile Applications-BC-v01_00-EN.pdf?fileId=5546d46254e133b401552f350ee3697c Description: IC RF ANT DEVICE 10TSNP
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IRS2113MTRPBF IRS2113MTRPBF Infineon Technologies irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7 Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
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IPI80N06S207AKSA1 IPI80N06S207AKSA1 Infineon Technologies Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43339a25ab4&ack=t Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPI80N06S4L07AKSA2 IPI80N06S4L07AKSA2 Infineon Technologies Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304320d39d590121aa3ae68d1c80 Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB80N06S2L-11 IPB80N06S2L-11 Infineon Technologies INFNS17038-1.pdf?t.download=true&u=5oefqw Description: IPB80N06 - 55V-60V N-CHANNEL AUT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 93µA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Packaging: Bulk
Produkt ist nicht verfügbar
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IPI80N06S207AKSA2 IPI80N06S207AKSA2 Infineon Technologies Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?fileId=db3a304412b407950112b43339a25ab4&ack=t Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IKW75N65SS5XKSA1 IKW75N65SS5XKSA1 Infineon Technologies Infineon-IKW75N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc2833db31af Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/145ns
Switching Energy: 450µJ (on), 750µJ (off)
Test Condition: 400V, 75A, 5.6Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 10 Stücke:
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1+20.17 EUR
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IKW75N65RH5XKSA1 IKW75N65RH5XKSA1 Infineon Technologies Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/180ns
Switching Energy: 360µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
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IDK12G65C5XTMA1 IDK12G65C5XTMA1 Infineon Technologies INFNS29239-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE
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CYW170-01SXC CYW170-01SXC Infineon Technologies Description: IC CLK ZDB 133MHZ 8SOIC
Input: Clock
Output: Clock
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: 8-SOIC
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IPP60R180C7 Infineon Technologies Infineon-IPP60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d483fe4ba707b Description: 13A, 600V, 0.18OHM, N-CHANNEL MO
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 260µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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BCR35PNH6433 BCR35PNH6433 Infineon Technologies INFNS19243-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
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BCR 35PN H6327 Infineon Technologies INFNS19243-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6
Part Status: Active
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BCR39PN-E6327 BCR39PN-E6327 Infineon Technologies INFNS19243-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS NPN/PNP
Packaging: Bulk
Part Status: Active
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DF200R12PT4B6BOSA1 DF200R12PT4B6BOSA1 Infineon Technologies Infineon-DF200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e34322f5f8d Description: IGBT MOD 1200V 300A 1100W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
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FD200R12PT4B6BOSA1 FD200R12PT4B6BOSA1 Infineon Technologies Infineon-FD200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e3a8c455fa0 Description: IGBT MOD 1200V 300A 1100W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
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FS200R07PE4BOSA1 FS200R07PE4BOSA1 Infineon Technologies Infineon-FS200R07PE4-DS-v02_01-en_de.pdf?fileId=db3a304333227b5e01335963ee7908dd Description: IGBT MOD 650V 200A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
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1+218.61 EUR
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FF200R12KT3EHOSA1 FF200R12KT3EHOSA1 Infineon Technologies Infineon-FF200R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a30431441fb5d0114d51250e31b88 Description: IGBT MODULE 1200V 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
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3+169.9 EUR
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F3L200R07PE4BOSA1 F3L200R07PE4BOSA1 Infineon Technologies Infineon-F3L200R07PE4-DS-v02_00-en_de.pdf?fileId=db3a30432f0d175c012f1060f84238f4 Description: IGBT MOD 650V 200A 680W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
auf Bestellung 3 Stücke:
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1+219.1 EUR
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DF200R12PT4B6BOSA1 DF200R12PT4B6BOSA1 Infineon Technologies Infineon-DF200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e34322f5f8d Description: IGBT MOD 1200V 300A 1100W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
Produkt ist nicht verfügbar
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FS200R12KT4RB11BOSA1 FS200R12KT4RB11BOSA1 Infineon Technologies Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6 Description: IGBT MOD 1200V 280A 1000W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 38 Stücke:
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1+230.01 EUR
10+183.27 EUR
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FS200R12PT4PBOSA1 FS200R12PT4PBOSA1 Infineon Technologies Infineon-FS200R12PT4P-DS-v02_00-EN.pdf?fileId=5546d46253f6505701542e3844cf3eda Description: IGBT MOD 1200V 200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 4 Stücke:
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1+308.77 EUR
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IKW30N65NL5 INFN-S-A0000241585-1.pdf?t.download=true&u=5oefqw
IKW30N65NL5
Hersteller: Infineon Technologies
Description: IKW30N65 - DISCRETE IGBT WITH AN
Produkt ist nicht verfügbar
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F3L400R10W3S7B11BPSA1 Infineon-F3L400R10W3S7_B11-DataSheet-v03_00-EN.pdf?fileId=5546d462712ef9b701717e23fe8d2713
F3L400R10W3S7B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Input Capacitance (Cies) @ Vce: 25.2 nF @ 25 V
Current - Collector Cutoff (Max): 70 µA
Voltage - Collector Emitter Breakdown (Max): 950 V
IGBT Type: Trench
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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FF1200R17IP5PBPSA1 Infineon-FF1200R17IP5P-DataSheet-v03_00-EN.pdf?fileId=5546d4627448fb2b017457d84aae414b
FF1200R17IP5PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 1200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
Produkt ist nicht verfügbar
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IPB080N03LGATMA1 IPB%2CIPP080N03LG.pdf
IPB080N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
auf Bestellung 3239 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
472+0.96 EUR
Mindestbestellmenge: 472 Stücke
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IPB080N03L G INFNS16326-1.pdf?t.download=true&u=5oefqw
IPB080N03L G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 1250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
693+0.72 EUR
Mindestbestellmenge: 693 Stücke
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SPB08N03L Infineon-SPB20N60S5-DS-v02_03-en.pdf?fileId=db3a304412b407950112b42ca0ff473e
SPB08N03L
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Part Status: Active
Packaging: Bulk
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
88+6.05 EUR
Mindestbestellmenge: 88 Stücke
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IPB080N03LG INFNS16326-1.pdf?t.download=true&u=5oefqw
IPB080N03LG
Hersteller: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 250µA
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TLV493DB1B6HTSA1 Infineon-TLV493D-A1B6-DataSheet-v01_10-EN.pdf?fileId=5546d462525dbac40152a6b85c760e80
Hersteller: Infineon Technologies
Description: IC 3D MAGN SENSOR TSOP6-6
Part Status: Discontinued at Digi-Key
Packaging: Bulk
auf Bestellung 49711 Stücke:
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AnzahlPreis
433+1.05 EUR
Mindestbestellmenge: 433 Stücke
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KP214N2611 INFNS15304-1.pdf?t.download=true&u=5oefqw
KP214N2611
Hersteller: Infineon Technologies
Description: SENSOR 16.68PSIA 4.65V DSOF8
Part Status: Active
Port Style: No Port
Supplier Device Package: PG-DSOF-8-16
Applications: Board Mount
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: SMD (SMT) Tab
Operating Temperature: -40°C ~ 125°C (TA)
Accuracy: ±0.65PSI (4.50kPa)
Pressure Type: Absolute
Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa)
Output: 0.18V ~ 4.65V
Mounting Type: Surface Mount
Output Type: Analog Voltage
Package / Case: 8-SMD Module
Features: Amplified Output, Temperature Compensated
Packaging: Bulk
auf Bestellung 211472 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
95+5.09 EUR
Mindestbestellmenge: 95 Stücke
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ICE3PCS02GXUMA2 INFN-S-A0002955532-1.pdf?t.download=true&u=5oefqw
ICE3PCS02GXUMA2
Hersteller: Infineon Technologies
Description: ICE3PCS02 - PFC-CCM (CONTINUOUS
Current - Startup: 380 µA
Part Status: Active
Supplier Device Package: PG-DSO-8-6
Mode: Continuous Conduction (CCM)
Frequency - Switching: 21kHz ~ 100kHz
Voltage - Supply: 11V ~ 25V
Operating Temperature: -25°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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IRLC8256ED
Hersteller: Infineon Technologies
Description: MOSFET N-CH WAFER
Produkt ist nicht verfügbar
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IR3897MTRPBF ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813
IR3897MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 4A 16PQFN
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Synchronous Rectifier: Yes
Supplier Device Package: 16-PowerQFN
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR3897MTRPBF ir3897m.pdf?fileId=5546d462533600a4015355d5e3731813
IR3897MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 4A 16PQFN
Part Status: Obsolete
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Synchronous Rectifier: Yes
Supplier Device Package: 16-PowerQFN
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 4A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IR3898MTRPBF ir3898m.pdf?fileId=5546d462533600a4015355d5ebb01815
IR3898MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 6A 16POWERQFN
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Synchronous Rectifier: Yes
Supplier Device Package: 16-PowerQFN
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 6A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR3898MTRPBF ir3898m.pdf?fileId=5546d462533600a4015355d5ebb01815
IR3898MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 6A 16POWERQFN
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Synchronous Rectifier: Yes
Supplier Device Package: 16-PowerQFN
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 6A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IR3899MTRPBF ir3899m.pdf?fileId=5546d462533600a4015355d5f3f71817
IR3899MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 9A 16PQFN
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Synchronous Rectifier: Yes
Supplier Device Package: 16-PQFN (4x5)
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 9A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IR3894MTRPBF ir3894m.pdf?fileId=5546d462533600a4015355d5d4d6180f
IR3894MTRPBF
Hersteller: Infineon Technologies
Description: IC REG BUCK ADJ 12A 16PWRQFN
Synchronous Rectifier: Yes
Supplier Device Package: 16-PowerQFN
Topology: Buck
Voltage - Input (Max): 21V
Frequency - Switching: 300kHz ~ 1.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 12A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 16-PowerVQFN
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 0.5V
Voltage - Input (Min): 1V
Voltage - Output (Max): 18.06V
Produkt ist nicht verfügbar
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CY7C1480V33-200AXC Infineon-CY7C1480BV33_CY7C1482BV33_72_MBIT_(2M_X_36_4M_X_18)_PIPELINED_SYNC_SRAM-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec45b3739ca
CY7C1480V33-200AXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Access Time: 3 ns
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 200 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+241.79 EUR
Mindestbestellmenge: 3 Stücke
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BC817K-25WE6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-25WE6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Produkt ist nicht verfügbar
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BC817K-16WH6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
Produkt ist nicht verfügbar
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BC817K-16E6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-16E6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: PG-SOT23
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7572+0.064 EUR
Mindestbestellmenge: 7572 Stücke
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BC817K-25E6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-25E6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Produkt ist nicht verfügbar
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BC817K-25WH6327 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-25WH6327
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
auf Bestellung 23600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5735+0.081 EUR
Mindestbestellmenge: 5735 Stücke
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BC817K-25WH6433 INFNS16504-1.pdf?t.download=true&u=5oefqw
BC817K-25WH6433
Hersteller: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
Package / Case: SC-70, SOT-323
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: PG-SOT323-3-1
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5735+0.081 EUR
Mindestbestellmenge: 5735 Stücke
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SIDC07D60AF6X1SA1 SIDC07D60AF6_L4294M.pdf?folderId=db3a304412b407950112b435f0da6425&fileId=db3a304412b407950112b435f1586426
Hersteller: Infineon Technologies
Description: DIODE GP 600V 22.5A WAFER
Current - Average Rectified (Io): 22.5A
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Reverse Leakage @ Vr: 27 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 22.5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Sawn on foil
Produkt ist nicht verfügbar
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IRSM515-055DA irsm505-055.pdf?fileId=5546d462533600a40153567bf5dc287d
IRSM515-055DA
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 2.4A 23DIP
Part Status: Discontinued at Digi-Key
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 400V (Max)
Technology: UMOS
Current - Peak Output: 15A
Current - Output / Channel: 2.4A
Applications: AC Motors
Rds On (Typ): 1.3Ohm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Features: Bootstrap Circuit
Packaging: Bulk
auf Bestellung 5520 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
49+9.25 EUR
Mindestbestellmenge: 49 Stücke
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IFX1117MEV33 INFNS16936-1.pdf?t.download=true&u=5oefqw
IFX1117MEV33
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
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IFX1117MEV INFNS16936-1.pdf?t.download=true&u=5oefqw
IFX1117MEV
Hersteller: Infineon Technologies
Description: IFX1117 - LINEAR VOLTAGE REGULAT
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 1.4V @ 1A
PSRR: 70dB (120Hz)
Voltage - Output (Min/Fixed): 1.25V
Voltage - Output (Max): 13.6V
Supplier Device Package: PG-SOT223-4
Number of Regulators: 1
Voltage - Input (Max): 15V
Current - Quiescent (Iq): 10 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C (TJ)
Current - Output: 1A
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
auf Bestellung 39213 Stücke:
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AnzahlPreis
961+0.52 EUR
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IFX1117MEV33HTMA1 IFX1117_Rev1.0_2-24-11.pdf
IFX1117MEV33HTMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 1A SOT223-4-21
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 15V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4-21
Voltage - Output (Min/Fixed): 3.3V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 1.4V @ 1A
Protection Features: Over Current, Over Temperature, Short Circuit
auf Bestellung 2959 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
655+0.7 EUR
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IPT60R075CFD7XTMA1 Infineon-IPT60R075CFD7-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f920171df2a0edb30e3
IPT60R075CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 33A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 11.4A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Supplier Device Package: PG-HSOF-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
Produkt ist nicht verfügbar
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IPD35N10S3L-26 INFNS16590-1.pdf?t.download=true&u=5oefqw
IPD35N10S3L-26
Hersteller: Infineon Technologies
Description: IPD35N10 - 75V-100V N-CHANNEL AU
Produkt ist nicht verfügbar
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IPD60R1K0CEAUMA1 Infineon-IPD60R1K0CE-DS-v02_02-EN.pdf?fileId=5546d46249be182c0149c7bf4c481e94
IPD60R1K0CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 6.8A 61W TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3-344
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
12+1.53 EUR
19+0.95 EUR
100+0.62 EUR
500+0.48 EUR
1000+0.43 EUR
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TLE4269GL Infineon-TLE4269-DS-v02_50-EN.pdf?fileId=5546d46259d9a4bf0159f96807553e57
TLE4269GL
Hersteller: Infineon Technologies
Description: IC REG LIN FIXED POS LDO REG 5V
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-20
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Part Status: Active
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Antisaturation, Over Current, Over Temperature, Reverse Polarity, Short Circuit
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DDB6U205N16LHOSA1 Infineon-DDB6U205N16L-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b4314e925403
DDB6U205N16LHOSA1
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 1600V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Standard
Diode Configuration: 3 Independent
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.47 V @ 200 A
Current - Reverse Leakage @ Vr: 10 mA @ 1600 V
auf Bestellung 2 Stücke:
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AnzahlPreis
1+333.54 EUR
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BTC50010-1TAA INFN-S-A0001300279-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER PERIPHL DRIVER
Part Status: Active
Fault Protection: Over Voltage
Supplier Device Package: PG-TO-263-7-8
Ratio - Input:Output: 1:1
Current - Output (Max): 30A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 18V
Input Type: Non-Inverting
Rds On (Typ): 900µOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Features: Load Discharge
Packaging: Bulk
auf Bestellung 1866 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
74+7.18 EUR
Mindestbestellmenge: 74 Stücke
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BGSA20VGL8E6327XTSA1 Infineon-BGSA20VGL8-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f9201722cfc21123da1
BGSA20VGL8E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPST 6GHZ TSNP8-1
Supplier Device Package: PG-TSNP-8-1
Frequency Range: 6GHz
Voltage - Supply: 1.65V ~ 3.6V
RF Type: CDMA, EDGE, LTE, W-CDMA
Circuit: SPST
Mounting Type: Surface Mount
Package / Case: 8-XFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BGSA20UGL8E6327XTSA1 Infineon-BGSA20UGL8-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f9201722cfc2b923da4
BGSA20UGL8E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF ANT DEVICE 10TSLP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BGSA20UGL8E6327XTSA1 Infineon-BGSA20UGL8-DataSheet-v02_01-EN.pdf?fileId=5546d46271bf4f9201722cfc2b923da4
BGSA20UGL8E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF ANT DEVICE 10TSLP
Packaging: Cut Tape (CT)
auf Bestellung 14775 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
21+0.84 EUR
30+0.6 EUR
33+0.54 EUR
100+0.47 EUR
250+0.43 EUR
500+0.41 EUR
1000+0.4 EUR
Mindestbestellmenge: 21 Stücke
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BGSA20GN10E6327XTSA1 Infineon-RF Front End Solutions for Mobile Applications-BC-v01_00-EN.pdf?fileId=5546d46254e133b401552f350ee3697c
BGSA20GN10E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF ANT DEVICE 10TSNP
Produkt ist nicht verfügbar
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IRS2113MTRPBF irs2113mpbf.pdf?fileId=5546d462533600a40153567676a227b7
IRS2113MTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16MLPQ
Packaging: Tape & Reel (TR)
Package / Case: 16-VFQFN Exposed Pad, 14 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 16-MLPQ (4x4)
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2925 Stücke:
Lieferzeit 10-14 Tag (e)
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IPI80N06S207AKSA1 Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426db703ad9&fileId=db3a304412b407950112b43339a25ab4&ack=t
IPI80N06S207AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
249+1.81 EUR
Mindestbestellmenge: 249 Stücke
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IPI80N06S4L07AKSA2 Infineon-IPP_B_I80N06S4L_07-DS-v01_00-en%5B1%5D.pdf?fileId=db3a304320d39d590121aa3ae68d1c80
IPI80N06S4L07AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 80A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5680 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9817 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
235+1.9 EUR
Mindestbestellmenge: 235 Stücke
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IPB80N06S2L-11 INFNS17038-1.pdf?t.download=true&u=5oefqw
IPB80N06S2L-11
Hersteller: Infineon Technologies
Description: IPB80N06 - 55V-60V N-CHANNEL AUT
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2V @ 93µA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Packaging: Bulk
Produkt ist nicht verfügbar
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IPI80N06S207AKSA2 Infineon-IPP_B_I80N06S2_07-DS-v01_00-en.pdf?fileId=db3a304412b407950112b43339a25ab4&ack=t
IPI80N06S207AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 68A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 180µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
152+2.96 EUR
Mindestbestellmenge: 152 Stücke
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IKW75N65SS5XKSA1 Infineon-IKW75N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc2833db31af
IKW75N65SS5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/145ns
Switching Energy: 450µJ (on), 750µJ (off)
Test Condition: 400V, 75A, 5.6Ohm, 15V
Gate Charge: 164 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+20.17 EUR
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IKW75N65RH5XKSA1 Infineon-IKW75N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc281ce931ac
IKW75N65RH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/180ns
Switching Energy: 360µJ (on), 300µJ (off)
Test Condition: 400V, 37.5A, 9Ohm, 15V
Gate Charge: 168 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+14.31 EUR
30+8.39 EUR
120+7.09 EUR
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IDK12G65C5XTMA1 INFNS29239-1.pdf?t.download=true&u=5oefqw
IDK12G65C5XTMA1
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE
auf Bestellung 1437 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
103+5.19 EUR
Mindestbestellmenge: 103 Stücke
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CYW170-01SXC
CYW170-01SXC
Hersteller: Infineon Technologies
Description: IC CLK ZDB 133MHZ 8SOIC
Input: Clock
Output: Clock
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: 8-SOIC
auf Bestellung 6567 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
189+2.8 EUR
Mindestbestellmenge: 189 Stücke
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IPP60R180C7 Infineon-IPP60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014d483fe4ba707b
Hersteller: Infineon Technologies
Description: 13A, 600V, 0.18OHM, N-CHANNEL MO
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 4V @ 260µA
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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BCR35PNH6433 INFNS19243-1.pdf?t.download=true&u=5oefqw
BCR35PNH6433
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
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BCR 35PN H6327 INFNS19243-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4116+0.12 EUR
Mindestbestellmenge: 4116 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BCR39PN-E6327 INFNS19243-1.pdf?t.download=true&u=5oefqw
BCR39PN-E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN/PNP
Packaging: Bulk
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2077+0.23 EUR
Mindestbestellmenge: 2077 Stücke
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DF200R12PT4B6BOSA1 Infineon-DF200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e34322f5f8d
DF200R12PT4B6BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 300A 1100W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+374.84 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FD200R12PT4B6BOSA1 Infineon-FD200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e3a8c455fa0
FD200R12PT4B6BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 300A 1100W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
auf Bestellung 86 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+281.99 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FS200R07PE4BOSA1 Infineon-FS200R07PE4-DS-v02_01-en_de.pdf?fileId=db3a304333227b5e01335963ee7908dd
FS200R07PE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 200A 600W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 600 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12 nF @ 25 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+218.61 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF200R12KT3EHOSA1 Infineon-FF200R12KT3_E-DS-v02_00-en_de.pdf?fileId=db3a30431441fb5d0114d51250e31b88
FF200R12KT3EHOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 1050W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 351 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+169.9 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
F3L200R07PE4BOSA1 Infineon-F3L200R07PE4-DS-v02_00-en_de.pdf?fileId=db3a30432f0d175c012f1060f84238f4
F3L200R07PE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 200A 680W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+219.1 EUR
Im Einkaufswagen  Stück im Wert von  UAH
DF200R12PT4B6BOSA1 Infineon-DF200R12PT4_B6-DS-v03_00-en_de.pdf?fileId=db3a30433a047ba0013a6e34322f5f8d
DF200R12PT4B6BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 300A 1100W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1100 W
Current - Collector Cutoff (Max): 15 µA
Input Capacitance (Cies) @ Vce: 12.5 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FS200R12KT4RB11BOSA1 Infineon-FS200R12KT4R_B11-DS-v02_01-en_de.pdf?fileId=db3a30432a14dd54012a3336af6002b6
FS200R12KT4RB11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 280A 1000W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1000 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+230.01 EUR
10+183.27 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FS200R12PT4PBOSA1 Infineon-FS200R12PT4P-DS-v02_00-EN.pdf?fileId=5546d46253f6505701542e3844cf3eda
FS200R12PT4PBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+308.77 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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