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BAS140WE6327 BAS140WE6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 40V 120MA SOD323-2
Produkt ist nicht verfügbar
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BAS7006E6433HTMA1 BAS7006E6433HTMA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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BAS7006E6433HTMA1 BAS7006E6433HTMA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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BAS70-06E6327 BAS70-06E6327 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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BAS70-06E6433 BAS70-06E6433 Infineon Technologies INFNS11040-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V 70MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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IDB18E120 IDB18E120 Infineon Technologies INFNS27247-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 1.2KV 31A TO263
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 195 ns
Technology: Standard
Current - Average Rectified (Io): 31A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 18 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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BCR119E6327HTSA1 BCR119E6327HTSA1 Infineon Technologies bcr119series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144057767402f3 Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
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8290+0.06 EUR
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IPA60R600P6 Infineon Technologies INFNS27707-1.pdf?t.download=true&u=5oefqw Description: 600V, 0.6OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Produkt ist nicht verfügbar
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IPA60R180C7 IPA60R180C7 Infineon Technologies Infineon-IPA60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fd65089d0627d Description: 9A, 600V, 0.18OHM, N-CHANNEL MOS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Produkt ist nicht verfügbar
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BTS72004EPADAUGHBRDTOBO1 BTS72004EPADAUGHBRDTOBO1 Infineon Technologies Infineon-Customer_evaluation_kit%20_description-UserManual-v01_01-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7 Description: BTS7200-4EPA DAUGHTER BOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7200-4EPA
Part Status: Active
auf Bestellung 2 Stücke:
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1+82.79 EUR
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BTS3011TEATMA1 BTS3011TEATMA1 Infineon Technologies Infineon-BTS3011TE-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164f55355be563e Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 10.7mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Over Current, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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6+3.33 EUR
10+2.47 EUR
25+2.25 EUR
100+2.02 EUR
250+1.9 EUR
500+1.83 EUR
1000+1.78 EUR
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TLE9012AQUDTRBMS2TOBO1 TLE9012AQUDTRBMS2TOBO1 Infineon Technologies Infineon-Li-Ion_Battery_Monitoring_and_Balancing_IC_Demo_Kit_TLE9012AQU_TLE9015QU-UserManual-v01_00-EN.pdf?fileId=5546d46272e49d2a01730976520e4546 Description: EVAL BOARD FOR TLE9012AQU
Packaging: Bulk
Function: Battery Monitor
Type: Power Management
Utilized IC / Part: TLE9012AQU
Supplied Contents: Board(s)
Primary Attributes: Cell Balancer
Embedded: No
Contents: Board(s)
auf Bestellung 9 Stücke:
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1+438.06 EUR
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BAS16-03WE6327 BAS16-03WE6327 Infineon Technologies INFNS13366-1.pdf?t.download=true&u=5oefqw Description: DIODE GP 80V 250MA SOD323-2-1
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOD323-2-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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IPA50R250CP IPA50R250CP Infineon Technologies INFN-S-A0004583242-1.pdf?t.download=true&u=5oefqw Description: IPA50R250 - 500V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
auf Bestellung 220 Stücke:
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220+2.75 EUR
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BSP7772T Infineon Technologies Infineon-BSP772T-DS-v01_01-EN.pdf?fileId=5546d4625a888733015aadefb07a4c41 Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BSP77 E6327 BSP77 E6327 Infineon Technologies BSP77.pdf Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.17A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRF5802 IRF5802 Infineon Technologies IRF5802.pdf Description: MOSFET N-CH 150V 900MA MICRO6
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
Produkt ist nicht verfügbar
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IPI50R140CPXKSA1 IPI50R140CPXKSA1 Infineon Technologies Infineon-IPI50R140CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e012384dfccfc657a Description: HIGH POWER_LEGACY
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
auf Bestellung 20374 Stücke:
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144+3.28 EUR
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PEB2046NVA3 PEB2046NVA3 Infineon Technologies SIEMD00112-96.pdf?t.download=true&u=5oefqw Description: IC MEMORY 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Type: Memory
Supplier Device Package: 44-PLCC (16.6x16.6)
DigiKey Programmable: Not Verified
auf Bestellung 571 Stücke:
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29+16.97 EUR
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IPA057N06N3G IPA057N06N3G Infineon Technologies INFNS15787-1.pdf?t.download=true&u=5oefqw Description: IPA057N06 - 12V-300V N-CHANNEL P
auf Bestellung 31105 Stücke:
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DD261N22KHPSA1 Infineon Technologies Infineon-DD261N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42fa08c4ca0 Description: DIODE MODULE GP 2200V 260A
Produkt ist nicht verfügbar
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IPP45P03P4L11AKSA1 IPP45P03P4L11AKSA1 Infineon Technologies IPx45P03P4L-11.pdf Description: MOSFET P-CH 30V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3053 Stücke:
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398+1.14 EUR
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IPB80R290C3A IPB80R290C3A Infineon Technologies Infineon-IPB80R290C3A-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663e7c05663210 Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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IPW80R290C3A IPW80R290C3A Infineon Technologies Infineon-IPW80R290C3A-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663e7d4c5e3222 Description: N-CHANNEL AUTOMOTIVE MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBT3904B5000 SMBT3904B5000 Infineon Technologies INFNS11268-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 40V 0.2A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
auf Bestellung 820000 Stücke:
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10764+0.046 EUR
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BAW56B5000 BAW56B5000 Infineon Technologies INFNS11183-1.pdf?t.download=true&u=5oefqw Description: DIODE
Packaging: Bulk
auf Bestellung 180000 Stücke:
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10764+0.045 EUR
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BC857BB5000 BC857BB5000 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 270000 Stücke:
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13172+0.032 EUR
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BAT54B5000 BAT54B5000 Infineon Technologies INFNS09503-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOT 30V 200MA PGSOT23311
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 165000 Stücke:
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10764+0.045 EUR
Mindestbestellmenge: 10764
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BAS16B5000 BAS16B5000 Infineon Technologies INFNS13366-1.pdf?t.download=true&u=5oefqw Description: DIODE STD 80V 250MA PGSOT23311
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)
10764+0.049 EUR
Mindestbestellmenge: 10764
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BC846BB5000 Infineon Technologies INFNS14907-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 65V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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BC847CB5000 BC847CB5000 Infineon Technologies SIEMD095-475.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A PG-SOT23-3-1
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Qualification: AEC-Q101
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BAS40B5000 BAS40B5000 Infineon Technologies INFNS09504-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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BAS70B5000 BAS70B5000 Infineon Technologies INFNS09505-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 70V 70MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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IPP230N06L3 G IPP230N06L3 G Infineon Technologies IP%28B%2CP%29230N06L3_G.pdf Description: MOSFET N-CH 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
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BTS50121EKAXUMA1 BTS50121EKAXUMA1 Infineon Technologies INFNS17245-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE SMART HIGH SIDE SWITC
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 12mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-43-EP
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
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TLE4271-2G TLE4271-2G Infineon Technologies Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f Description: IC REG LINEAR VOLT TLE4271
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BSM15GP120B2BOSA1 Infineon Technologies Description: IGBT MODULE 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Produkt ist nicht verfügbar
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ICE3BR0680JZ ICE3BR0680JZ Infineon Technologies INFNS17394-1.pdf?t.download=true&u=5oefqw Description: OFF-LINE SMPS CURRENT MODE CONTR
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 17 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 82 W
Produkt ist nicht verfügbar
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ICE3B1065FKLA1 ICE3B1065FKLA1 Infineon Technologies CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 32 W
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2EDL8123GXUMA1 2EDL8123GXUMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
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2EDL8123GXUMA1 2EDL8123GXUMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
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10+1.76 EUR
25+1.6 EUR
100+1.42 EUR
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1000+1.24 EUR
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2EDL8124GXUMA1 2EDL8124GXUMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDL8124GXUMA1 2EDL8124GXUMA1 Infineon Technologies Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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8+2.41 EUR
10+1.76 EUR
25+1.6 EUR
100+1.42 EUR
250+1.33 EUR
500+1.28 EUR
1000+1.24 EUR
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TLE49613LHALA1 TLE49613LHALA1 Infineon Technologies Infineon-TLE4961_3L-DS-v01_00-en.pdf?fileId=db3a30433899edae0138c3c365920311 Description: MAGNETIC SWITCH LATCH SSO-3-2
Packaging: Tape & Box (TB)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, -10.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE49613LHALA1 TLE49613LHALA1 Infineon Technologies Infineon-TLE4961_3L-DS-v01_00-en.pdf?fileId=db3a30433899edae0138c3c365920311 Description: MAGNETIC SWITCH LATCH SSO-3-2
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, -10.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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11+1.62 EUR
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25+1.38 EUR
50+1.29 EUR
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500+1.02 EUR
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TLE49611LHALA1 TLE49611LHALA1 Infineon Technologies Infineon-TLE4961_1L-DS-v01_00-en.pdf?fileId=db3a3043397219b6013977b435505444 Description: MAGNETIC SWITCH LATCH SSO-3-2
Packaging: Tape & Box (TB)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TLE49611LHALA1 TLE49611LHALA1 Infineon Technologies Infineon-TLE4961_1L-DS-v01_00-en.pdf?fileId=db3a3043397219b6013977b435505444 Description: MAGNETIC SWITCH LATCH SSO-3-2
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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10+1.92 EUR
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12+1.51 EUR
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500+1.02 EUR
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EVALM16ED2230B1TOBO1 EVALM16ED2230B1TOBO1 Infineon Technologies Infineon-EVAL-M1-6ED2230-B1-ApplicationNotes-v01_03-EN.pdf?fileId=5546d4626cb27db2016d053aea2b11b0 Description: EVAL BOARD FOR M16ED2230B1
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Utilized IC / Part: M16ED2230B1
Supplied Contents: Board(s)
Contents: Board(s)
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BFP843H6327 BFP843H6327 Infineon Technologies INFNS27659-1.pdf?t.download=true&u=5oefqw Description: ULTRA LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Supplier Device Package: SOT-343
Part Status: Active
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BSZ070N08LS5ATMA1 BSZ070N08LS5ATMA1 Infineon Technologies Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d Description: MOSFET N-CH 80V 74A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
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IAUC70N08S5N074ATMA1 IAUC70N08S5N074ATMA1 Infineon Technologies Infineon-IAUC70N08S5N074-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a531f6aa0013 Description: MOSFET N-CH 80V 70A 8TDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC70N08S5N074ATMA1 IAUC70N08S5N074ATMA1 Infineon Technologies Infineon-IAUC70N08S5N074-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a531f6aa0013 Description: MOSFET N-CH 80V 70A 8TDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5639 Stücke:
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7+2.85 EUR
10+1.99 EUR
100+1.34 EUR
500+1.06 EUR
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2000+0.9 EUR
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IPP070N08N3G IPP070N08N3G Infineon Technologies INFN-S-A0001300127-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
auf Bestellung 609 Stücke:
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400+1.26 EUR
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IPP070N08N3 G IPP070N08N3 G Infineon Technologies %28IPP%2CIPI%2CIPB%290x0N08N3_G.pdf Description: MOSFET N-CH 80V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
Produkt ist nicht verfügbar
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TD500N16KOFHPSA2 TD500N16KOFHPSA2 Infineon Technologies Infineon-TT500N-DS-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d Description: SCR MODULE 1800V 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
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TLE4927CE6547HAMA1 TLE4927CE6547HAMA1 Infineon Technologies TLE4927C_Br.pdf Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Package / Case: 3-SSIP Module
Mounting Type: Through Hole
Supplier Device Package: PG-SSO-3-91
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 35320 Stücke:
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96+5.17 EUR
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TLE4927CE6547 TLE4927CE6547 Infineon Technologies INFNS30565-1.pdf?t.download=true&u=5oefqw Description: TLE4927 - MAGNETIC SPEED SENSOR
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: Digital
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
Produkt ist nicht verfügbar
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TLE4927CNE6547HAMA1 TLE4927CNE6547HAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAG SWITCH HALL EFFECT SSO-3
Packaging: Bulk
Package / Case: 3-SSIP Module
Mounting Type: Through Hole
Supplier Device Package: PG-SSO-3-91
Grade: Automotive
Qualification: AEC-Q100
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83+5.84 EUR
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TLE42694G Infineon Technologies Infineon-TLE42694-DS-v01_30-EN.pdf?fileId=5546d46259d9a4bf0159f97a31993e65 Description: IC REG LIN FIXED POS LDO REG 5V
auf Bestellung 2500 Stücke:
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BFQ19SH6359XTMA1 BFQ19SH6359XTMA1 Infineon Technologies INFNS30117-1.pdf?t.download=true&u=5oefqw Description: BFQ19S - RF SMALL SIGNAL BIPOLAR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 1W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Supplier Device Package: PG-SOT89-4-2
Produkt ist nicht verfügbar
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BAS140WE6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS140WE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 40V 120MA SOD323-2
Produkt ist nicht verfügbar
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BAS7006E6433HTMA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7006E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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BAS7006E6433HTMA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7006E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY SCHOT 70V 70MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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BAS70-06E6327 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70-06E6327
Hersteller: Infineon Technologies
Description: BAS70 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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BAS70-06E6433 INFNS11040-1.pdf?t.download=true&u=5oefqw
BAS70-06E6433
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 70V 70MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 20000 Stücke:
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Anzahl Preis
3328+0.14 EUR
Mindestbestellmenge: 3328
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IDB18E120 INFNS27247-1.pdf?t.download=true&u=5oefqw
IDB18E120
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.2KV 31A TO263
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 195 ns
Technology: Standard
Current - Average Rectified (Io): 31A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 18 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 21100 Stücke:
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Anzahl Preis
265+1.83 EUR
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BCR119E6327HTSA1 bcr119series.pdf?folderId=db3a30431428a37301144053a52002e2&fileId=db3a30431428a37301144057767402f3
BCR119E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V
Supplier Device Package: PG-SOT23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
auf Bestellung 378000 Stücke:
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Anzahl Preis
8290+0.06 EUR
Mindestbestellmenge: 8290
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IPA60R600P6 INFNS27707-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 600V, 0.6OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tj)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 557 pF @ 100 V
Produkt ist nicht verfügbar
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IPA60R180C7 Infineon-IPA60R180C7-DS-v02_00-EN.pdf?fileId=5546d4624fb7fef2014fd65089d0627d
IPA60R180C7
Hersteller: Infineon Technologies
Description: 9A, 600V, 0.18OHM, N-CHANNEL MOS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.3A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-TO220-3-111
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Produkt ist nicht verfügbar
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BTS72004EPADAUGHBRDTOBO1 Infineon-Customer_evaluation_kit%20_description-UserManual-v01_01-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7
BTS72004EPADAUGHBRDTOBO1
Hersteller: Infineon Technologies
Description: BTS7200-4EPA DAUGHTER BOARD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7200-4EPA
Part Status: Active
auf Bestellung 2 Stücke:
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Anzahl Preis
1+82.79 EUR
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BTS3011TEATMA1 Infineon-BTS3011TE-DS-v01_00-EN.pdf?fileId=5546d46264a8de7e0164f55355be563e
BTS3011TEATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 10.7mOhm
Input Type: Non-Inverting
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Over Current, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1321 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.33 EUR
10+2.47 EUR
25+2.25 EUR
100+2.02 EUR
250+1.9 EUR
500+1.83 EUR
1000+1.78 EUR
Mindestbestellmenge: 6
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TLE9012AQUDTRBMS2TOBO1 Infineon-Li-Ion_Battery_Monitoring_and_Balancing_IC_Demo_Kit_TLE9012AQU_TLE9015QU-UserManual-v01_00-EN.pdf?fileId=5546d46272e49d2a01730976520e4546
TLE9012AQUDTRBMS2TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLE9012AQU
Packaging: Bulk
Function: Battery Monitor
Type: Power Management
Utilized IC / Part: TLE9012AQU
Supplied Contents: Board(s)
Primary Attributes: Cell Balancer
Embedded: No
Contents: Board(s)
auf Bestellung 9 Stücke:
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Anzahl Preis
1+438.06 EUR
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BAS16-03WE6327 INFNS13366-1.pdf?t.download=true&u=5oefqw
BAS16-03WE6327
Hersteller: Infineon Technologies
Description: DIODE GP 80V 250MA SOD323-2-1
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOD323-2-1
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
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IPA50R250CP INFN-S-A0004583242-1.pdf?t.download=true&u=5oefqw
IPA50R250CP
Hersteller: Infineon Technologies
Description: IPA50R250 - 500V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 100 V
auf Bestellung 220 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
220+2.75 EUR
Mindestbestellmenge: 220
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BSP7772T Infineon-BSP772T-DS-v01_01-EN.pdf?fileId=5546d4625a888733015aadefb07a4c41
Hersteller: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BSP77 E6327 BSP77.pdf
BSP77 E6327
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.17A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRF5802 IRF5802.pdf
IRF5802
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 900MA MICRO6
Packaging: Tube
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 540mA, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: Micro6™(TSOP-6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 88 pF @ 25 V
Produkt ist nicht verfügbar
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IPI50R140CPXKSA1 Infineon-IPI50R140CP-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e012384dfccfc657a
IPI50R140CPXKSA1
Hersteller: Infineon Technologies
Description: HIGH POWER_LEGACY
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
auf Bestellung 20374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
144+3.28 EUR
Mindestbestellmenge: 144
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PEB2046NVA3 SIEMD00112-96.pdf?t.download=true&u=5oefqw
PEB2046NVA3
Hersteller: Infineon Technologies
Description: IC MEMORY 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Type: Memory
Supplier Device Package: 44-PLCC (16.6x16.6)
DigiKey Programmable: Not Verified
auf Bestellung 571 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+16.97 EUR
Mindestbestellmenge: 29
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IPA057N06N3G INFNS15787-1.pdf?t.download=true&u=5oefqw
IPA057N06N3G
Hersteller: Infineon Technologies
Description: IPA057N06 - 12V-300V N-CHANNEL P
auf Bestellung 31105 Stücke:
Lieferzeit 10-14 Tag (e)
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DD261N22KHPSA1 Infineon-DD261N-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b42fa08c4ca0
Hersteller: Infineon Technologies
Description: DIODE MODULE GP 2200V 260A
Produkt ist nicht verfügbar
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IPP45P03P4L11AKSA1 IPx45P03P4L-11.pdf
IPP45P03P4L11AKSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 45A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 45A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3053 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
398+1.14 EUR
Mindestbestellmenge: 398
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IPB80R290C3A Infineon-IPB80R290C3A-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663e7c05663210
IPB80R290C3A
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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IPW80R290C3A Infineon-IPW80R290C3A-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663e7d4c5e3222
IPW80R290C3A
Hersteller: Infineon Technologies
Description: N-CHANNEL AUTOMOTIVE MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SMBT3904B5000 INFNS11268-1.pdf?t.download=true&u=5oefqw
SMBT3904B5000
Hersteller: Infineon Technologies
Description: TRANS NPN 40V 0.2A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 330 mW
auf Bestellung 820000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10764+0.046 EUR
Mindestbestellmenge: 10764
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BAW56B5000 INFNS11183-1.pdf?t.download=true&u=5oefqw
BAW56B5000
Hersteller: Infineon Technologies
Description: DIODE
Packaging: Bulk
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10764+0.045 EUR
Mindestbestellmenge: 10764
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BC857BB5000 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857BB5000
Hersteller: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 270000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13172+0.032 EUR
Mindestbestellmenge: 13172
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BAT54B5000 INFNS09503-1.pdf?t.download=true&u=5oefqw
BAT54B5000
Hersteller: Infineon Technologies
Description: DIODE SCHOT 30V 200MA PGSOT23311
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 165000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10764+0.045 EUR
Mindestbestellmenge: 10764
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BAS16B5000 INFNS13366-1.pdf?t.download=true&u=5oefqw
BAS16B5000
Hersteller: Infineon Technologies
Description: DIODE STD 80V 250MA PGSOT23311
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 180000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10764+0.049 EUR
Mindestbestellmenge: 10764
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BC846BB5000 INFNS14907-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: TRANS NPN 65V 0.1A SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
Produkt ist nicht verfügbar
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BC847CB5000 SIEMD095-475.pdf?t.download=true&u=5oefqw
BC847CB5000
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23-3-1
Packaging: Bulk
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
Qualification: AEC-Q101
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.045 EUR
Mindestbestellmenge: 8955
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BAS40B5000 INFNS09504-1.pdf?t.download=true&u=5oefqw
BAS40B5000
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 120mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8510+0.065 EUR
Mindestbestellmenge: 8510
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BAS70B5000 INFNS09505-1.pdf?t.download=true&u=5oefqw
BAS70B5000
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SOT23-3-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10377+0.049 EUR
Mindestbestellmenge: 10377
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IPP230N06L3 G IP%28B%2CP%29230N06L3_G.pdf
IPP230N06L3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
Produkt ist nicht verfügbar
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BTS50121EKAXUMA1 INFNS17245-1.pdf?t.download=true&u=5oefqw
BTS50121EKAXUMA1
Hersteller: Infineon Technologies
Description: AUTOMOTIVE SMART HIGH SIDE SWITC
Packaging: Bulk
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 12mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 10A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-43-EP
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
auf Bestellung 618975 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
281+1.66 EUR
Mindestbestellmenge: 281
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TLE4271-2G Infineon-TLE4271-2-DS-v02_70-EN.pdf?fileId=5546d46259d9a4bf0159f97a56393e6f
TLE4271-2G
Hersteller: Infineon Technologies
Description: IC REG LINEAR VOLT TLE4271
Produkt ist nicht verfügbar
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BSM15GP120B2BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Full Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 180 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 1 nF @ 25 V
Produkt ist nicht verfügbar
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ICE3BR0680JZ INFNS17394-1.pdf?t.download=true&u=5oefqw
ICE3BR0680JZ
Hersteller: Infineon Technologies
Description: OFF-LINE SMPS CURRENT MODE CONTR
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 25V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 17 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 82 W
Produkt ist nicht verfügbar
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ICE3B1065FKLA1 CoolSET-F3.pdf?folderId=db3a304412b407950112b4182a3d24f8&fileId=db3a304412b407950112b428f6ba3f30
ICE3B1065FKLA1
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 15 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 32 W
Produkt ist nicht verfügbar
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2EDL8123GXUMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8123GXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6000+1.16 EUR
Mindestbestellmenge: 6000
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2EDL8123GXUMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8123GXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 3A, 3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 15254 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
10+1.76 EUR
25+1.6 EUR
100+1.42 EUR
250+1.33 EUR
500+1.28 EUR
1000+1.24 EUR
2500+1.19 EUR
Mindestbestellmenge: 8
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2EDL8124GXUMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8124GXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDL8124GXUMA1 Infineon-2EDL8X2X-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ff6a7de184a
2EDL8124GXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 8V ~ 17V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 90 V
Supplier Device Package: PG-VDSON-8-4
Rise / Fall Time (Typ): 45ns, 45ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 3670 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
10+1.76 EUR
25+1.6 EUR
100+1.42 EUR
250+1.33 EUR
500+1.28 EUR
1000+1.24 EUR
2500+1.19 EUR
Mindestbestellmenge: 8
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TLE49613LHALA1 Infineon-TLE4961_3L-DS-v01_00-en.pdf?fileId=db3a30433899edae0138c3c365920311
TLE49613LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SSO-3-2
Packaging: Tape & Box (TB)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, -10.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE49613LHALA1 Infineon-TLE4961_3L-DS-v01_00-en.pdf?fileId=db3a30433899edae0138c3c365920311
TLE49613LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SSO-3-2
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 10.4mT Trip, -10.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
11+1.62 EUR
12+1.51 EUR
25+1.38 EUR
50+1.29 EUR
100+1.2 EUR
500+1.02 EUR
1000+0.95 EUR
Mindestbestellmenge: 10
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TLE49611LHALA1 Infineon-TLE4961_1L-DS-v01_00-en.pdf?fileId=db3a3043397219b6013977b435505444
TLE49611LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SSO-3-2
Packaging: Tape & Box (TB)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.71 EUR
Mindestbestellmenge: 2000
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TLE49611LHALA1 Infineon-TLE4961_1L-DS-v01_00-en.pdf?fileId=db3a3043397219b6013977b435505444
TLE49611LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH LATCH SSO-3-2
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 3-SSIP, SSO-3-02
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Through Hole
Function: Latch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 3.5mT Trip, -3.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SSO-3-2
Test Condition: 25°C
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
11+1.62 EUR
12+1.51 EUR
25+1.38 EUR
50+1.29 EUR
100+1.2 EUR
500+1.02 EUR
1000+0.95 EUR
Mindestbestellmenge: 10
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EVALM16ED2230B1TOBO1 Infineon-EVAL-M1-6ED2230-B1-ApplicationNotes-v01_03-EN.pdf?fileId=5546d4626cb27db2016d053aea2b11b0
EVALM16ED2230B1TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR M16ED2230B1
Packaging: Bulk
Function: Motor Controller/Driver, Stepper
Type: Power Management
Utilized IC / Part: M16ED2230B1
Supplied Contents: Board(s)
Contents: Board(s)
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+959.32 EUR
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BFP843H6327 INFNS27659-1.pdf?t.download=true&u=5oefqw
BFP843H6327
Hersteller: Infineon Technologies
Description: ULTRA LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 24.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.25V
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
Supplier Device Package: SOT-343
Part Status: Active
auf Bestellung 194705 Stücke:
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Anzahl Preis
1898+0.28 EUR
Mindestbestellmenge: 1898
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BSZ070N08LS5ATMA1 Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d
BSZ070N08LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 74A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
auf Bestellung 9312 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.97 EUR
14+1.31 EUR
100+1.11 EUR
Mindestbestellmenge: 9
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IAUC70N08S5N074ATMA1 Infineon-IAUC70N08S5N074-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a531f6aa0013
IAUC70N08S5N074ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 70A 8TDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC70N08S5N074ATMA1 Infineon-IAUC70N08S5N074-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a531f6aa0013
IAUC70N08S5N074ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 70A 8TDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 35A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 36µA
Supplier Device Package: PG-TDSON-8-33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5639 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.85 EUR
10+1.99 EUR
100+1.34 EUR
500+1.06 EUR
1000+0.94 EUR
2000+0.9 EUR
Mindestbestellmenge: 7
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IPP070N08N3G INFN-S-A0001300127-1.pdf?t.download=true&u=5oefqw
IPP070N08N3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
auf Bestellung 609 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
400+1.26 EUR
Mindestbestellmenge: 400
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IPP070N08N3 G %28IPP%2CIPI%2CIPB%290x0N08N3_G.pdf
IPP070N08N3 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 73A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TO220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 40 V
Produkt ist nicht verfügbar
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TD500N16KOFHPSA2 Infineon-TT500N-DS-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d
TD500N16KOFHPSA2
Hersteller: Infineon Technologies
Description: SCR MODULE 1800V 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+435.85 EUR
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TLE4927CE6547HAMA1 TLE4927C_Br.pdf
TLE4927CE6547HAMA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH HALL EFF SSO-3
Packaging: Bulk
Package / Case: 3-SSIP Module
Mounting Type: Through Hole
Supplier Device Package: PG-SSO-3-91
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 35320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
96+5.17 EUR
Mindestbestellmenge: 96
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TLE4927CE6547 INFNS30565-1.pdf?t.download=true&u=5oefqw
TLE4927CE6547
Hersteller: Infineon Technologies
Description: TLE4927 - MAGNETIC SPEED SENSOR
Packaging: Bulk
Package / Case: 3-SSIP Module
Output Type: Digital
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Technology: Hall Effect
Supplier Device Package: PG-SSO-3-92
Part Status: Active
Produkt ist nicht verfügbar
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TLE4927CNE6547HAMA1 fundamentals-of-power-semiconductors
TLE4927CNE6547HAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH HALL EFFECT SSO-3
Packaging: Bulk
Package / Case: 3-SSIP Module
Mounting Type: Through Hole
Supplier Device Package: PG-SSO-3-91
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 55176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
83+5.84 EUR
Mindestbestellmenge: 83
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TLE42694G Infineon-TLE42694-DS-v01_30-EN.pdf?fileId=5546d46259d9a4bf0159f97a31993e65
Hersteller: Infineon Technologies
Description: IC REG LIN FIXED POS LDO REG 5V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
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BFQ19SH6359XTMA1 INFNS30117-1.pdf?t.download=true&u=5oefqw
BFQ19SH6359XTMA1
Hersteller: Infineon Technologies
Description: BFQ19S - RF SMALL SIGNAL BIPOLAR
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 11.5dB
Power - Max: 1W
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 70mA, 8V
Frequency - Transition: 5.5GHz
Noise Figure (dB Typ @ f): 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Supplier Device Package: PG-SOT89-4-2
Produkt ist nicht verfügbar
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