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BB669 BB669 Infineon Technologies INFNS15707-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Capacitance Ratio: 20.9
Voltage - Peak Reverse (Max): 30 V
Supplier Device Package: PG-SOD323-2-1
Capacitance Ratio Condition: C1/C28
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Operating Temperature: -55°C ~ 150°C
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Bulk
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BB669E7904 BB669E7904 Infineon Technologies INFNS15707-1.pdf?t.download=true&u=5oefqw Description: DIODE VARACTR 30V SGL PG-SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2-1
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 20.9
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BB659CH7903XTMA1 BB659CH7903XTMA1 Infineon Technologies bb639c_bb659cseries.pdf Description: DIODE VARACTOR 30V SNGLE SCD-80
Capacitance Ratio: 15.3
Voltage - Peak Reverse (Max): 30 V
Supplier Device Package: SCD-80
Capacitance Ratio Condition: C1/C28
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-80
Packaging: Bulk
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BB659H7902 BB659H7902 Infineon Technologies INFNS15706-1.pdf?t.download=true&u=5oefqw Description: VARIABLE CAPACITANCE DIODE
Capacitance Ratio: 14.7
Voltage - Peak Reverse (Max): 30 V
Supplier Device Package: PG-SCD80-2
Capacitance Ratio Condition: C1/C28
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Operating Temperature: -55°C ~ 150°C
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-80
Packaging: Bulk
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BSM50GP60B2BOSA1 Infineon Technologies INFNS12611-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Packaging: Bulk
Part Status: Active
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S29GL512S10SFI020 S29GL512S10SFI020 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 512MBIT PARALLEL 64FBGA
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IPA50R299CPXKSA1 IPA50R299CPXKSA1 Infineon Technologies IPA50R299CP.pdf Description: MOSFET N-CH 550V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
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IPA50R299CPXKSA1079 Infineon Technologies INFNS15798-1.pdf?t.download=true&u=5oefqw Description: IPA50R299 - 500V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
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IPA50R299CP Infineon Technologies INFNS15798-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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FS150R12KT4PBPSA1 FS150R12KT4PBPSA1 Infineon Technologies Description: IGBT MODULE LOW PWR ECONO3-4
Packaging: Bulk
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FS150R12PT4 Infineon Technologies INFNS28534-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO4-1-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 680 W
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FS150R17KE3GBOSA1 FS150R17KE3GBOSA1 Infineon Technologies Infineon-FS150R17KE3G-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b42fea3c4e48 Description: IGBT MOD 1700V 240A 1050W MOD
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 1050 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 240 A
Part Status: Not For New Designs
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FS150R17KE3G Infineon Technologies INFNS28151-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 1050 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 240 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
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FS150R07N3E4 Infineon Technologies INFNS28524-1.pdf?t.download=true&u=5oefqw Description: FS150R07 - IGBT MODULE
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FS150R06KL4B4BDLA1 FS150R06KL4B4BDLA1 Infineon Technologies Description: MOD IGBT 2 LOW POWER ECONO3-1
Packaging: Tray
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FS100R07N3E4_B11 Infineon Technologies INFNS28507-1.pdf?t.download=true&u=5oefqw Description: IGBT, 100A, 650V, N-CHANNEL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
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FS100R12KT4PB15BPSA1 Infineon Technologies Infineon-FS100R12KT4G-DS-v02_00-en_de.pdf?fileId=db3a3043156fd5730116190dc0431c81 Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
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FS100R07N2E4_B11 Infineon Technologies INFN-S-A0003209908-1.pdf?t.download=true&u=5oefqw Description: FS100R07 - IGBT MODULE
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 125 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FS100R07PE4BOSA1 FS100R07PE4BOSA1 Infineon Technologies Infineon-FS100R07PE4-DS-v02_00-en_de.pdf?fileId=db3a304333227b5e013359531e9908c6 Description: IGBT MOD 650V 100A 335W MOD
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 335 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FS100R12PT4 Infineon Technologies INFNS28515-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO4-1-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FS100R12KT4PBPSA1 Infineon Technologies Description: IGBT MODULE LOW PWR ECONO2-6
Packaging: Bulk
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FS100R17PE4BOSA1 FS100R17PE4BOSA1 Infineon Technologies Infineon-FS100R17PE4-DS-v02_01-en_de.pdf?fileId=db3a3043243b5f170124d89c3e2d7380 Description: IGBT MOD 1700V 100A 600W
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 600 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FS100R07N2E4B11BOSA1 FS100R07N2E4B11BOSA1 Infineon Technologies Infineon-FS100R07N2E4_B11-DS-v03_00-EN.pdf?fileId=db3a30433004641301304036f2a4573e Description: IGBT MODULE 650V 125A MODULE
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 125 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FS100R17PE4BOSA1 FS100R17PE4BOSA1 Infineon Technologies Infineon-FS100R17PE4-DS-v02_01-en_de.pdf?fileId=db3a3043243b5f170124d89c3e2d7380 Description: IGBT MOD 1700V 100A 600W
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 600 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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FS100R17KS4F FS100R17KS4F Infineon Technologies FS100R17KS4F-Infineon.pdf Description: IGBT MOD 1700V 100A 960W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.7V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 960 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
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IRF40H233XTMA1 IRF40H233XTMA1 Infineon Technologies Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9 Description: MOSFET 2N-CH 40V 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: PG-TDSON-8-900
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRF40H233ATMA1 IRF40H233ATMA1 Infineon Technologies Infineon-IRF40H233-DataSheet-v02_03-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9 Description: MOSFET 2N-CH 40V 65A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PG-TDSON-8-4
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BTS409L1E3062A BTS409L1E3062A Infineon Technologies INFNS30248-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE SMART HIGH SIDE SWITC
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Current, Short Circuit
Supplier Device Package: PG-TO263-5-2
Ratio - Input:Output: 1:1
Current - Output (Max): 2.3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Input Type: Non-Inverting
Rds On (Typ): 160mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
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SIGC10T60EX1SA5 SIGC10T60EX1SA5 Infineon Technologies Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb Description: IGBT CHIP
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
IGBT Type: Trench Field Stop
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIGC10T60EX7SA3 Infineon Technologies Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb Description: IGBT 3 CHIP 600V 20A WAFER
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
IGBT Type: Trench Field Stop
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SIGC10T60EX1SA3 Infineon Technologies Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb Description: IGBT 3 CHIP 600V 20A WAFER
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
IGBT Type: Trench Field Stop
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
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SIGC10T60EX7SA1 Infineon Technologies Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb Description: IGBT 3 CHIP 600V 20A WAFER
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
IGBT Type: Trench Field Stop
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IKW50N65RH5XKSA1 IKW50N65RH5XKSA1 Infineon Technologies Infineon-IKW50N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc27f90f31a6 Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/180ns
Switching Energy: 230µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 305 W
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IKW50N65SS5XKSA1 IKW50N65SS5XKSA1 Infineon Technologies Infineon-IKW50N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc280a0e31a9 Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 320µJ (on), 550µJ (off)
Test Condition: 400V, 50A, 9Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
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TLE42642GHTMA1 TLE42642GHTMA1 Infineon Technologies Infineon-TLE4264-2G-DataSheet-v02_71-EN.pdf?fileId=5546d46258fc0bc101595f6960991f2d Description: IC REG LIN 5V 150MA PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
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TLE42794GXUMA2 TLE42794GXUMA2 Infineon Technologies Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80 Description: IC REG LINEAR 5V 100MA 8DSO
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 8 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 70dB (100Hz)
Part Status: Active
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 280 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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TLE42794GXUMA2 TLE42794GXUMA2 Infineon Technologies Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80 Description: IC REG LINEAR 5V 100MA 8DSO
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 8 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 70dB (100Hz)
Part Status: Active
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 280 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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TC267D40F200SBBKXUMA1 TC267D40F200SBBKXUMA1 Infineon Technologies Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445 Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
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IM231L6S1BAUMA1 Infineon Technologies Infineon-IM231-L6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067334d10ef3 Description: CIPOS MICRO
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IM231L6S1BAUMA1 Infineon Technologies Infineon-IM231-L6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067334d10ef3 Description: CIPOS MICRO
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IM231M6S1BAUMA1 Infineon Technologies Infineon-IM231-M6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067346a60ef9 Description: CIPOS MICRO
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IGCM10F60HAXKMA1 IGCM10F60HAXKMA1 Infineon Technologies IGCM10F60HA.pdf Description: IGBT 600V 10A 24PWRDIP MOD
Voltage: 600 V
Current: 10 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Packaging: Bulk
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IRS26320JTRPBF Infineon Technologies IRS26320JPbF_Factsheet.pdf Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Supplier Device Package: 44-PLCC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 12V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 200mA, 350mA
Gate Type: IGBT, N-Channel, P-Channel MOSFET
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TLE82422LXUMA2 TLE82422LXUMA2 Infineon Technologies Infineon-TLE8242_2-DS-v01_00-en.pdf?fileId=db3a3043271faefd012743c4b3380fdd Description: IC CURRENT SOURCE 64LQFP
Part Status: Active
Supplier Device Package: PG-LQFP-64-4
Operating Temperature: -40°C ~ 150°C
Voltage - Input: 5.5V ~ 42V
Function: Current Source
Mounting Type: Surface Mount
Sensing Method: Low-Side
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
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BSP88E6327 BSP88E6327 Infineon Technologies BSP88.pdf Description: MOSFET N-CH 240V 350MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
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TT500N16KOFS01HPSA1 Infineon Technologies Description: DIODE BG-PB60-1
Produkt ist nicht verfügbar
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IRFI4212H-117PXKMA1 IRFI4212H-117PXKMA1 Infineon Technologies irfi4212h-117p.pdf?fileId=5546d462533600a401535623fc841f7a Description: MOSFET 2N-CH 100V 11A TO220-5
Drain to Source Voltage (Vdss): 100V
Power - Max: 18W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Through Hole
Package / Case: TO-220-5 Full Pack, Formed Leads
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-220-5 Full-Pak
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 6.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
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EVAL2EDL23I06PJTOBO1 EVAL2EDL23I06PJTOBO1 Infineon Technologies Infineon-2EDL23I06PJ_EVAL-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46145f1f3a401461dcd1de41bd5 Description: EVAL BOARD FOR 2EDL23I06-PJ
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2EDL23I06-PJ
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
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IPI80N04S3-06 IPI80N04S3-06 Infineon Technologies INFNS10782-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
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IPI80N04S3-03 IPI80N04S3-03 Infineon Technologies INFNS10911-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL AUTOMOTIVE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 120µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
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IPI80N04S404AKSA1 IPI80N04S404AKSA1 Infineon Technologies Infineon-IPP_B_I80N04S4_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c71d4085dfa&ack=t Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
Qualification: AEC-Q101
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IPB80N04S2-H4 Infineon Technologies INFNS11807-1.pdf?t.download=true&u=5oefqw Description: IPB80N04 - 20V-40V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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IPI80N04S3-04 Infineon Technologies INFNS10666-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
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BSC050N10NS5ATMA1 BSC050N10NS5ATMA1 Infineon Technologies Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d Description: MOSFET N-CH 100V 16A/100A TDSON
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-TDSON-8-7
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
FET Type: N-Channel
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BSC050N10NS5ATMA1 BSC050N10NS5ATMA1 Infineon Technologies Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d Description: MOSFET N-CH 100V 16A/100A TDSON
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
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IPA60R380C6 Infineon Technologies INFN-S-A0004583381-1.pdf?t.download=true&u=5oefqw Description: 600V COOLMOS POWER TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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BBY5102VH6327XTSA1 BBY5102VH6327XTSA1 Infineon Technologies bby51series.pdf Description: DIODE TUNING 2SC79
Capacitance Ratio: 2.2
Voltage - Peak Reverse (Max): 7 V
Part Status: Obsolete
Supplier Device Package: PG-SC79-2-1
Capacitance Ratio Condition: C1/C4
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Bulk
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IRF6610TR1 IRF6610TR1 Infineon Technologies description Description: MOSFET N-CH 20V 15A DIRECTFET
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IPL60R060CFD7AUMA1 IPL60R060CFD7AUMA1 Infineon Technologies Infineon-IPL60R060CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633ed634654cdf Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 18A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 400 V
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IPL60R060CFD7AUMA1 IPL60R060CFD7AUMA1 Infineon Technologies Infineon-IPL60R060CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633ed634654cdf Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 18A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 400 V
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10+9.97 EUR
50+7.95 EUR
100+7.29 EUR
500+7.07 EUR
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BB669 INFNS15707-1.pdf?t.download=true&u=5oefqw
BB669
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Capacitance Ratio: 20.9
Voltage - Peak Reverse (Max): 30 V
Supplier Device Package: PG-SOD323-2-1
Capacitance Ratio Condition: C1/C28
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Operating Temperature: -55°C ~ 150°C
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Bulk
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15000+0.038 EUR
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BB669E7904 INFNS15707-1.pdf?t.download=true&u=5oefqw
BB669E7904
Hersteller: Infineon Technologies
Description: DIODE VARACTR 30V SGL PG-SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-2-1
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 20.9
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BB659CH7903XTMA1 bb639c_bb659cseries.pdf
BB659CH7903XTMA1
Hersteller: Infineon Technologies
Description: DIODE VARACTOR 30V SNGLE SCD-80
Capacitance Ratio: 15.3
Voltage - Peak Reverse (Max): 30 V
Supplier Device Package: SCD-80
Capacitance Ratio Condition: C1/C28
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-80
Packaging: Bulk
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BB659H7902 INFNS15706-1.pdf?t.download=true&u=5oefqw
BB659H7902
Hersteller: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Capacitance Ratio: 14.7
Voltage - Peak Reverse (Max): 30 V
Supplier Device Package: PG-SCD80-2
Capacitance Ratio Condition: C1/C28
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Operating Temperature: -55°C ~ 150°C
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-80
Packaging: Bulk
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12000+0.06 EUR
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BSM50GP60B2BOSA1 INFNS12611-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Part Status: Active
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S29GL512S10SFI020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL512S10SFI020
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Produkt ist nicht verfügbar
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IPA50R299CPXKSA1 IPA50R299CP.pdf
IPA50R299CPXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 550V 12A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
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IPA50R299CPXKSA1079 INFNS15798-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IPA50R299 - 500V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Produkt ist nicht verfügbar
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IPA50R299CP INFNS15798-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-31
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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FS150R12KT4PBPSA1
FS150R12KT4PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW PWR ECONO3-4
Packaging: Bulk
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3+280.59 EUR
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FS150R12PT4 INFNS28534-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO4-1-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 680 W
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3+270.87 EUR
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FS150R17KE3GBOSA1 Infineon-FS150R17KE3G-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b42fea3c4e48
FS150R17KE3GBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 240A 1050W MOD
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 1050 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 240 A
Part Status: Not For New Designs
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Configuration: Full Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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FS150R17KE3G INFNS28151-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 13.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 1050 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 240 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Three Phase Inverter
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1+968.87 EUR
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FS150R07N3E4 INFNS28524-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FS150R07 - IGBT MODULE
Produkt ist nicht verfügbar
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FS150R06KL4B4BDLA1
FS150R06KL4B4BDLA1
Hersteller: Infineon Technologies
Description: MOD IGBT 2 LOW POWER ECONO3-1
Packaging: Tray
Produkt ist nicht verfügbar
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FS100R07N3E4_B11 INFNS28507-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT, 100A, 650V, N-CHANNEL
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 335 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
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3+199 EUR
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FS100R12KT4PB15BPSA1 Infineon-FS100R12KT4G-DS-v02_00-en_de.pdf?fileId=db3a3043156fd5730116190dc0431c81
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
auf Bestellung 218 Stücke:
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3+225.65 EUR
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FS100R07N2E4_B11 INFN-S-A0003209908-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FS100R07 - IGBT MODULE
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 125 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO2B
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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4+166.78 EUR
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FS100R07PE4BOSA1 Infineon-FS100R07PE4-DS-v02_00-en_de.pdf?fileId=db3a304333227b5e013359531e9908c6
FS100R07PE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 650V 100A 335W MOD
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 335 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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AnzahlPrivatkunde
2+277.76 EUR
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FS100R12PT4 INFNS28515-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 500 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO4-1-1
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 1361 Stücke:
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3+231.82 EUR
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FS100R12KT4PBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW PWR ECONO2-6
Packaging: Bulk
auf Bestellung 178 Stücke:
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AnzahlPrivatkunde
2+410.76 EUR
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FS100R17PE4BOSA1 Infineon-FS100R17PE4-DS-v02_01-en_de.pdf?fileId=db3a3043243b5f170124d89c3e2d7380
FS100R17PE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 100A 600W
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 600 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
auf Bestellung 243 Stücke:
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3+244.21 EUR
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FS100R07N2E4B11BOSA1 Infineon-FS100R07N2E4_B11-DS-v03_00-EN.pdf?fileId=db3a30433004641301304036f2a4573e
FS100R07N2E4B11BOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 650V 125A MODULE
Input Capacitance (Cies) @ Vce: 6.2 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 125 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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FS100R17PE4BOSA1 Infineon-FS100R17PE4-DS-v02_01-en_de.pdf?fileId=db3a3043243b5f170124d89c3e2d7380
FS100R17PE4BOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 100A 600W
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 600 W
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 100 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Produkt ist nicht verfügbar
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FS100R17KS4F FS100R17KS4F-Infineon.pdf
FS100R17KS4F
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 100A 960W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 4.7V @ 15V, 100A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 960 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 7 nF @ 25 V
Produkt ist nicht verfügbar
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IRF40H233XTMA1 Infineon-IRF40H233-DS-v01_00-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9
IRF40H233XTMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Supplier Device Package: PG-TDSON-8-900
Part Status: Obsolete
Produkt ist nicht verfügbar
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IRF40H233ATMA1 Infineon-IRF40H233-DataSheet-v02_03-EN.pdf?fileId=5546d462689a790c0168a1d5500962d9
IRF40H233ATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 40V 65A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 50W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 20V
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 50µA
Supplier Device Package: PG-TDSON-8-4
Produkt ist nicht verfügbar
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BTS409L1E3062A INFNS30248-1.pdf?t.download=true&u=5oefqw
BTS409L1E3062A
Hersteller: Infineon Technologies
Description: AUTOMOTIVE SMART HIGH SIDE SWITC
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Current, Short Circuit
Supplier Device Package: PG-TO263-5-2
Ratio - Input:Output: 1:1
Current - Output (Max): 2.3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Input Type: Non-Inverting
Rds On (Typ): 160mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Produkt ist nicht verfügbar
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SIGC10T60EX1SA5 Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb
SIGC10T60EX1SA5
Hersteller: Infineon Technologies
Description: IGBT CHIP
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
IGBT Type: Trench Field Stop
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIGC10T60EX7SA3 Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V 20A WAFER
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
IGBT Type: Trench Field Stop
Produkt ist nicht verfügbar
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SIGC10T60EX1SA3 Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V 20A WAFER
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
IGBT Type: Trench Field Stop
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Produkt ist nicht verfügbar
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SIGC10T60EX7SA1 Infineon-SIGC10T60E-DS-v02_02-EN.pdf?fileId=db3a30433b47825b013b843ba8c832bb
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V 20A WAFER
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 20A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 20 A
IGBT Type: Trench Field Stop
Produkt ist nicht verfügbar
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IKW50N65RH5XKSA1 Infineon-IKW50N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc27f90f31a6
IKW50N65RH5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/180ns
Switching Energy: 230µJ (on), 180µJ (off)
Test Condition: 400V, 25A, 12Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 305 W
auf Bestellung 207 Stücke:
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AnzahlPrivatkunde
2+13.64 EUR
30+7.84 EUR
120+6.56 EUR
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IKW50N65SS5XKSA1 Infineon-IKW50N65SS5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc280a0e31a9
IKW50N65SS5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 320µJ (on), 550µJ (off)
Test Condition: 400V, 50A, 9Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 274 W
auf Bestellung 116 Stücke:
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AnzahlPrivatkunde
2+18.64 EUR
30+10.98 EUR
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TLE42642GHTMA1 Infineon-TLE4264-2G-DataSheet-v02_71-EN.pdf?fileId=5546d46258fc0bc101595f6960991f2d
TLE42642GHTMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 150MA PG-SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 70 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 4 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 8000 Stücke:
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AnzahlPrivatkunde
4000+1.46 EUR
8000+1.44 EUR
Mindestbestellmenge: 4000 Stücke
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TLE42794GXUMA2 Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80
TLE42794GXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA 8DSO
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 8 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 70dB (100Hz)
Part Status: Active
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 280 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE42794GXUMA2 Infineon-TLE42794-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e494d1f80
TLE42794GXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA 8DSO
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 8 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA
PSRR: 70dB (100Hz)
Part Status: Active
Control Features: Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-8
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 280 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 100mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2272 Stücke:
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AnzahlPrivatkunde
8+2.78 EUR
11+2.03 EUR
25+1.84 EUR
100+1.63 EUR
250+1.54 EUR
500+1.48 EUR
1000+1.43 EUR
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TC267D40F200SBBKXUMA1 Infineon-TC26xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b40169538e06030445
TC267D40F200SBBKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2.5MB FLSH 292LFBGA
Produkt ist nicht verfügbar
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IM231L6S1BAUMA1 Infineon-IM231-L6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067334d10ef3
Hersteller: Infineon Technologies
Description: CIPOS MICRO
Produkt ist nicht verfügbar
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IM231L6S1BAUMA1 Infineon-IM231-L6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067334d10ef3
Hersteller: Infineon Technologies
Description: CIPOS MICRO
Produkt ist nicht verfügbar
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IM231M6S1BAUMA1 Infineon-IM231-M6S1B_T2B-DataSheet-v02_01-EN.pdf?fileId=5546d462689a790c0169067346a60ef9
Hersteller: Infineon Technologies
Description: CIPOS MICRO
Produkt ist nicht verfügbar
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IGCM10F60HAXKMA1 IGCM10F60HA.pdf
IGCM10F60HAXKMA1
Hersteller: Infineon Technologies
Description: IGBT 600V 10A 24PWRDIP MOD
Voltage: 600 V
Current: 10 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Packaging: Bulk
auf Bestellung 182 Stücke:
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AnzahlPrivatkunde
45+12.96 EUR
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IRS26320JTRPBF IRS26320JPbF_Factsheet.pdf
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Supplier Device Package: 44-PLCC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 12V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 200mA, 350mA
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Produkt ist nicht verfügbar
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TLE82422LXUMA2 Infineon-TLE8242_2-DS-v01_00-en.pdf?fileId=db3a3043271faefd012743c4b3380fdd
TLE82422LXUMA2
Hersteller: Infineon Technologies
Description: IC CURRENT SOURCE 64LQFP
Part Status: Active
Supplier Device Package: PG-LQFP-64-4
Operating Temperature: -40°C ~ 150°C
Voltage - Input: 5.5V ~ 42V
Function: Current Source
Mounting Type: Surface Mount
Sensing Method: Low-Side
Package / Case: 64-LQFP
Packaging: Cut Tape (CT)
auf Bestellung 1919 Stücke:
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AnzahlPrivatkunde
1+34.2 EUR
10+27.25 EUR
25+25.51 EUR
100+23.61 EUR
250+22.71 EUR
500+22.16 EUR
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BSP88E6327 BSP88.pdf
BSP88E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
auf Bestellung 258952 Stücke:
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AnzahlPrivatkunde
1011+0.55 EUR
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TT500N16KOFS01HPSA1
Hersteller: Infineon Technologies
Description: DIODE BG-PB60-1
Produkt ist nicht verfügbar
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IRFI4212H-117PXKMA1 irfi4212h-117p.pdf?fileId=5546d462533600a401535623fc841f7a
IRFI4212H-117PXKMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 100V 11A TO220-5
Drain to Source Voltage (Vdss): 100V
Power - Max: 18W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Through Hole
Package / Case: TO-220-5 Full Pack, Formed Leads
Packaging: Tube
Part Status: Active
Supplier Device Package: TO-220-5 Full-Pak
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 72.5mOhm @ 6.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 50V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
auf Bestellung 380 Stücke:
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AnzahlPrivatkunde
4+6.2 EUR
10+4.02 EUR
50+3.09 EUR
100+2.78 EUR
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EVAL2EDL23I06PJTOBO1 Infineon-2EDL23I06PJ_EVAL-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46145f1f3a401461dcd1de41bd5
EVAL2EDL23I06PJTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 2EDL23I06-PJ
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2EDL23I06-PJ
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
auf Bestellung 1 Stücke:
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AnzahlPrivatkunde
1+162.61 EUR
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IPI80N04S3-06 INFNS10782-1.pdf?t.download=true&u=5oefqw
IPI80N04S3-06
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
670+0.87 EUR
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IPI80N04S3-03 INFNS10911-1.pdf?t.download=true&u=5oefqw
IPI80N04S3-03
Hersteller: Infineon Technologies
Description: N-CHANNEL AUTOMOTIVE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 4V @ 120µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
248+2.4 EUR
Mindestbestellmenge: 248 Stücke
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IPI80N04S404AKSA1 Infineon-IPP_B_I80N04S4_04-DS-v01_00-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c71d4085dfa&ack=t
IPI80N04S404AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 80A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO262-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 285682 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
268+2.17 EUR
Mindestbestellmenge: 268 Stücke
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IPB80N04S2-H4 INFNS11807-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IPB80N04 - 20V-40V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Produkt ist nicht verfügbar
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IPI80N04S3-04 INFNS10666-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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BSC050N10NS5ATMA1 Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d
BSC050N10NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A/100A TDSON
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: PG-TDSON-8-7
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
FET Type: N-Channel
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.63 EUR
Mindestbestellmenge: 5000 Stücke
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BSC050N10NS5ATMA1 Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d
BSC050N10NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 16A/100A TDSON
Supplier Device Package: PG-TDSON-8-7
Vgs(th) (Max) @ Id: 3.8V @ 72µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Part Status: Active
FET Type: N-Channel
auf Bestellung 6845 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.74 EUR
10+3.71 EUR
50+2.84 EUR
100+2.56 EUR
500+2.07 EUR
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IPA60R380C6 INFN-S-A0004583381-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: 600V COOLMOS POWER TRANSISTOR
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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BBY5102VH6327XTSA1 bby51series.pdf
BBY5102VH6327XTSA1
Hersteller: Infineon Technologies
Description: DIODE TUNING 2SC79
Capacitance Ratio: 2.2
Voltage - Peak Reverse (Max): 7 V
Part Status: Obsolete
Supplier Device Package: PG-SC79-2-1
Capacitance Ratio Condition: C1/C4
Capacitance @ Vr, F: 3.7pF @ 4V, 1MHz
Operating Temperature: -55°C ~ 125°C (TJ)
Diode Type: Single
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Packaging: Bulk
auf Bestellung 402000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2420+0.24 EUR
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IRF6610TR1 description
IRF6610TR1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 15A DIRECTFET
Produkt ist nicht verfügbar
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IPL60R060CFD7AUMA1 Infineon-IPL60R060CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633ed634654cdf
IPL60R060CFD7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 18A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 400 V
auf Bestellung 9000 Stücke:
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AnzahlPrivatkunde
3000+6.13 EUR
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IPL60R060CFD7AUMA1 Infineon-IPL60R060CFD7-DS-v02_00-EN.pdf?fileId=5546d46262b31d2e01633ed634654cdf
IPL60R060CFD7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N CH
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 18A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3193 pF @ 400 V
auf Bestellung 9308 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.72 EUR
10+9.97 EUR
50+7.95 EUR
100+7.29 EUR
500+7.07 EUR
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