Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (126481) > Seite 389 nach 2109

Wählen Sie Seite:   [  << Vorherige Seite ]  1 210 384 385 386 387 388 389 390 391 392 393 394 420 630 840 1050 1260 1470 1680 1890 2100 2109  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
BAT17E6327 BAT17E6327 Infineon Technologies INFNS15700-1.pdf?t.download=true&u=5oefqw Description: BAT17 - RF MIXER AND DETECTOR SC
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT1707E6327 Infineon Technologies Description: MIXER DIODE, VHF TO UHF
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSM200GA120DN2FS Infineon Technologies Description: IGBT MODULE
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD89N16KKHPSA1 DD89N16KKHPSA1 Infineon Technologies INFNS29284-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY MOD 1200V 140A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLF11251EPXUMA1 TLF11251EPXUMA1 Infineon Technologies Infineon-TLF11251EP-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01772419f728582d Description: IC GATE DRVR HALF-BRIDGE 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.35V ~ 7V
Input Type: Non-Inverting
Supplier Device Package: PG-TSDSO-14-5
Rise / Fall Time (Typ): 60ns, 60ns
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 2.31V, 4.69V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1504 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.97 EUR
10+2.94 EUR
25+2.69 EUR
100+2.4 EUR
250+2.26 EUR
500+2.19 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TDA5201 TDA5201 Infineon Technologies TDA5201.pdf?t.download=true&amp;u=n9mhyd Description: ASK SINGLE CONVERSION RECEIVER
Packaging: Bulk
Features: RSSI Equipped
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 315MHz ~ 345MHz
Modulation or Protocol: ASK
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, Remote Control Systems
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
auf Bestellung 40048 Stücke:
Lieferzeit 10-14 Tag (e)
176+3.12 EUR
Mindestbestellmenge: 176 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TDA5201GEG TDA5201GEG Infineon Technologies Infineon-TDA5201-DS-v01_06-EN.pdf?fileId=5546d4625debb399015e286e5c233cb3 Description: ASK SINGLE CONVERSION RECEIVER
Frequency: 315MHz ~ 345MHz
Mounting Type: Surface Mount
Sensitivity: -113dBm
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Features: RSSI Equipped
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-TSSOP-28
Antenna Connector: PCB, Surface Mount
Applications: Alarm Systems, Communication Systems
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Modulation or Protocol: ASK
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)
180+3.19 EUR
Mindestbestellmenge: 180 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEF 80902 H V1.1 PEF 80902 H V1.1 Infineon Technologies PEF%2080902.pdf Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: Second Generation Modular
Interface: ISDN
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: P-MQFP-44
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 96 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS16E6393 BAS16E6393 Infineon Technologies INFNS10853-1.pdf?t.download=true&u=5oefqw Description: RECTIFIER DIODE
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 11269 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS16E6433HTMA1 BAS16E6433HTMA1 Infineon Technologies bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 1677539 Stücke:
Lieferzeit 10-14 Tag (e)
5594+0.092 EUR
Mindestbestellmenge: 5594 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGS12P2L6E6327XTSA1 BGS12P2L6E6327XTSA1 Infineon Technologies Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce Description: IC RF SWITCH SPDT 6GHZ TSLP6-4
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 0.51dB
Frequency Range: 50MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 27dB
Supplier Device Package: PG-TSLP-6-4
IIP3: 74dBm
auf Bestellung 174685 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.69 EUR
35+0.6 EUR
38+0.56 EUR
100+0.51 EUR
250+0.49 EUR
500+0.46 EUR
1000+0.45 EUR
5000+0.4 EUR
Mindestbestellmenge: 31 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRS26072DSTRPBF IRS26072DSTRPBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Part Status: Obsolete
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 150ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
auf Bestellung 11702 Stücke:
Lieferzeit 10-14 Tag (e)
185+2.99 EUR
Mindestbestellmenge: 185 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRS2609DSTRPBF-INF IRS2609DSTRPBF-INF Infineon Technologies Description: IRS2609D - HALF-BRIDGE DRIVER
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 150ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Part Status: Active
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.2V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9015QUXUMA1 TLE9015QUXUMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IC BATT BALANCER TQFP-48-11
Supplier Device Package: PG-TQFP-48-11
Interface: UART
Function: Battery Balancer
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9015QUXUMA1 TLE9015QUXUMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IC BATT BALANCER TQFP-48-11
Supplier Device Package: PG-TQFP-48-11
Interface: UART
Function: Battery Balancer
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PROFETMOTHERBRDTOBO1 PROFETMOTHERBRDTOBO1 Infineon Technologies Profet+_Demoboard_V14.pdf?fileId=5546d4614815da8801484091b947131c Description: MOTHERBOARD PROFET 12V/24V
Part Status: Active
Supplied Contents: Board(s)
Type: Interface
Function: Automotive
Packaging: Box
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+478.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SPOC2MOTHERBOARDTOBO1 SPOC2MOTHERBOARDTOBO1 Infineon Technologies Infineon-SPOC_Application_UserManual-UM-v01_00-EN.pdf?fileId=5546d462636cc8fb0163ee3784416c4c Description: SPOC+2 MOTHERBOARD
Part Status: Active
Supplied Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Box
Secondary Attributes: Graphical User Interface (GUI)
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+471.74 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TDA21201-S7 TDA21201-S7 Infineon Technologies TDA21201.pdf Description: IC HALF BRIDGE DRVR 30A TO220-7
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: TO-220-7
Mounting Type: Through Hole
Interface: PWM
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 9V ~ 15V
Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 9V ~ 15V
Supplier Device Package: P-TO220-7-230
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Obsolete
auf Bestellung 358 Stücke:
Lieferzeit 10-14 Tag (e)
123+4.4 EUR
Mindestbestellmenge: 123 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P404ATMA1 IPB120P04P404ATMA1 Infineon Technologies Infineon-IPP_B_I120P04P4_04-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f784299de2e44 Description: MOSFET P-CH 40V 120A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 340µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P404ATMA1 IPB120P04P404ATMA1 Infineon Technologies Infineon-IPP_B_I120P04P4_04-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f784299de2e44 Description: MOSFET P-CH 40V 120A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 340µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P4L03ATMA2 IPB120P04P4L03ATMA2 Infineon Technologies Infineon-IPP_B_I120P04P4L_03-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.49 EUR
3000+2.24 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P4L03ATMA2 IPB120P04P4L03ATMA2 Infineon Technologies Infineon-IPP_B_I120P04P4L_03-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9224 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.19 EUR
10+4.7 EUR
50+3.63 EUR
100+3.28 EUR
500+2.69 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P404ATMA2 IPB120P04P404ATMA2 Infineon Technologies Infineon-IPP_B_I120P04P4_04-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f784299de2e44 Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.49 EUR
3000+2.25 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P404ATMA2 IPB120P04P404ATMA2 Infineon Technologies Infineon-IPP_B_I120P04P4_04-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f784299de2e44 Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3061 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.2 EUR
10+4.7 EUR
50+3.63 EUR
100+3.28 EUR
500+2.7 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IDD03SG60CXTMA2 IDD03SG60CXTMA2 Infineon Technologies Infineon-IDD03SG60C-DS-v02_04-en.pdf?fileId=db3a304327b897500127dcb296f11a53 Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.59 EUR
10+3.61 EUR
100+2.46 EUR
500+1.98 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLT807B0EPVXUMA1 TLT807B0EPVXUMA1 Infineon Technologies Infineon-TLT807B0EPV-DS-v01_00-EN.pdf?fileId=5546d4625bd71aa0015c10aadbe33e93 Description: IC REG LIN POS ADJ 70MA TSDSO14
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 70mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 20V
Supplier Device Package: PG-TSDSO-14-1
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 70mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLT807B0EPVXUMA1 TLT807B0EPVXUMA1 Infineon Technologies Infineon-TLT807B0EPV-DS-v01_00-EN.pdf?fileId=5546d4625bd71aa0015c10aadbe33e93 Description: IC REG LIN POS ADJ 70MA TSDSO14
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 70mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 70mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 20V
Supplier Device Package: PG-TSDSO-14-1
Number of Regulators: 1
Voltage - Input (Max): 42V
auf Bestellung 2618 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.32 EUR
10+3.88 EUR
25+3.67 EUR
100+3.12 EUR
250+2.93 EUR
500+2.56 EUR
1000+2.12 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD90P04P4L04ATMA2 IPD90P04P4L04ATMA2 Infineon Technologies Infineon-IPD90P04P4L-04-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f7829059b2dee Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5623 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.4 EUR
10+3.49 EUR
50+2.67 EUR
100+2.39 EUR
500+1.93 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC052N08NS5ATMA1 BSC052N08NS5ATMA1 Infineon Technologies Infineon-BSC052N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae38fc94f2b40 Description: MOSFET N-CH 80V 95A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 47.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
auf Bestellung 17235 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.4 EUR
10+2.82 EUR
50+2.13 EUR
100+1.92 EUR
500+1.52 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB180N03S4L-01 IPB180N03S4L-01 Infineon Technologies INFNS14088-1.pdf?t.download=true&u=5oefqw Description: IPB180N03 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-TO263-7-3-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB80N03S203GATMA1 SPB80N03S203GATMA1 Infineon Technologies SP%28I%2CP%2CB%2980N03S2-03.pdf Description: MOSFET N-CH 30V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
188+2.93 EUR
Mindestbestellmenge: 188 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB180N03S4L-H0 IPB180N03S4L-H0 Infineon Technologies INFNS14089-1.pdf?t.download=true&u=5oefqw Description: IPB180N03 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: PG-TO263-7-3-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI80N03S4L-03 IPI80N03S4L-03 Infineon Technologies INFNS10791-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI80N03S4L-04 IPI80N03S4L-04 Infineon Technologies INFNS14810-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N03S4L-03 IPB80N03S4L-03 Infineon Technologies INFNS14810-1.pdf?t.download=true&u=5oefqw Description: IPB80N03 - 20V-40V N-CHANNEL AUT
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP023N04NGHKSA1 Infineon Technologies Infineon-IPB023N04N-DS-v01_02-en.pdf?fileId=db3a30432313ff5e01239f000f097121 Description: MOSFET N-CH 40V 90A TO220-3
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI023NE7N3G IPI023NE7N3G Infineon Technologies INFN-S-A0001299495-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
auf Bestellung 5746 Stücke:
Lieferzeit 10-14 Tag (e)
143+4.41 EUR
Mindestbestellmenge: 143 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT24-02LSE6327 BAT24-02LSE6327 Infineon Technologies INFNS15702-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 4V 110MA TSSLP-2-1
Power Dissipation (Max): 100 mW
Current - Max: 110 mA
Part Status: Active
Supplier Device Package: PG-TSSLP-2-1
Voltage - Peak Reverse (Max): 4V
Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - Single
Package / Case: 0201 (0603 Metric)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI4019H-117PXKMA1 IRFI4019H-117PXKMA1 Infineon Technologies irfi4019h-117p.pdf?fileId=5546d462533600a401535623d74d1f6f Description: MOSFET 2N-CH 150V 8.7A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W (Tc)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Active
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.41 EUR
50+3.21 EUR
100+2.9 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE4945LHALA1 TLE4945LHALA1 Infineon Technologies TLE49x5L.pdf Description: MAGNETIC SWITCH BIPOLAR 3SSO
Part Status: Last Time Buy
Test Condition: 25°C
Current - Supply (Max): 8mA
Current - Output (Max): 100mA
Sensing Range: ±6mT Trip, ±10mT Release
Technology: Hall Effect
Voltage - Supply: 3.8V ~ 24V
Operating Temperature: -40°C ~ 150°C
Function: Bipolar Switch
Polarization: North Pole, South Pole
Output Type: Open Collector
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN50R3K0CE Infineon Technologies Infineon-IPN50R3K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae0c05ad5 Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SP001461194 Infineon Technologies Infineon-IPN50R2K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac89b1f5aaa Description: IPN50R2K0CEATMA1 - MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN50R950CE Infineon Technologies INFN-S-A0002272334-1.pdf?t.download=true&u=5oefqw Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC333LP32F200FAAKXUMA1 TC333LP32F200FAAKXUMA1 Infineon Technologies infineon-tc33x-tc32x-aa-step-datasheet-datasheet-en.pdf Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IGP40N65H5 IGP40N65H5 Infineon Technologies INFN-S-A0001300424-1.pdf?t.download=true&u=5oefqw Description: IGP40N65 - DISCRETE IGBT WITHOUT
Power - Max: 250 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 74 A
Part Status: Active
Gate Charge: 95 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 390µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 22ns/165ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO220-3
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSL302SNL6327 BSL302SNL6327 Infineon Technologies INFNS16736-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSOP6-6-6
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSL302SNH6327XTSA1 BSL302SNH6327XTSA1 Infineon Technologies BSL302SN.pdf Description: MOSFET N-CH 30V 7.1A TSOP-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR540ZTRLPBF IRFR540ZTRLPBF Infineon Technologies irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.04 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFR540ZTRLPBF IRFR540ZTRLPBF Infineon Technologies irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102 Description: MOSFET N-CH 100V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
auf Bestellung 8950 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.75 EUR
10+2.39 EUR
50+1.81 EUR
100+1.62 EUR
500+1.29 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRSM515-044DA-INF Infineon Technologies IRSDS19334-1.pdf?t.download=true&u=5oefqw Description: IC HALF BRIDGE DRIVER 3A 23DIP
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 200V (Max)
Technology: MOSFET (Metal Oxide)
Current - Peak Output: 15A
Current - Output / Channel: 3A
Applications: AC Motors
Rds On (Typ): 800mOhm LS, 800mOhm HS
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module (0.573", 14.55mm)
Features: Bootstrap Circuit
Packaging: Bulk
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
66+8.23 EUR
Mindestbestellmenge: 66 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS5234G BTS5234G Infineon Technologies INFNS05973-1.pdf?t.download=true&u=5oefqw Description: HALF-BRIDGE PERIPHERAL DRIVER
Part Status: Active
Packaging: Bulk
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
125+5.05 EUR
Mindestbestellmenge: 125 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS5234GXUMA1 BTS5234GXUMA1 Infineon Technologies BTS5234G.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-20-21
Ratio - Input:Output: 1:1
Current - Output (Max): 3.3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.5V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 45mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Features: Auto Restart, Status Flag
Packaging: Bulk
auf Bestellung 510 Stücke:
Lieferzeit 10-14 Tag (e)
115+5.05 EUR
Mindestbestellmenge: 115 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IGD10N65T6ARMA1 IGD10N65T6ARMA1 Infineon Technologies Infineon-IGD10N65T6-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766c359b640dde Description: IGBT TRENCH FS 650V 23A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/106ns
Switching Energy: 200µJ (on), 70µJ (off)
Test Condition: 400V, 8.5A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 42.5 A
Power - Max: 75 W
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S2GO3DTLE493DW2B6A0TOBO1 S2GO3DTLE493DW2B6A0TOBO1 Infineon Technologies shield2go-boards-and-my-iot-adapter-fast-flexible-and-easy-prototyping-for-iot-applications-5546d4626b2d8e69016b503f3cce0810 Description: TLE493DW2B6 3DSENSE SHIELD2GO
Packaging: Box
Function: Magnetic Hall Effect
Type: Sensor
Contents: Board(s)
Utilized IC / Part: TLE493D-W2B6
Platform: Shield2Go
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MB90223PF-GT-269-BNDE1 Infineon Technologies Description: IC MCU 16BIT 64KB MROM 120PQFP
DigiKey Programmable: Not Verified
Number of I/O: 102
Part Status: Obsolete
Supplier Device Package: 120-QFP (28x28)
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b
Core Processor: F²MC-16F
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 3K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 120-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0803LSATMA1 BSC0803LSATMA1 Infineon Technologies Infineon-BSC0803LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708712944b1d3c Description: MOSFET N-CH 100V 10A/44A TDSON-6
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.39 EUR
10000+1.33 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC0803LSATMA1 BSC0803LSATMA1 Infineon Technologies Infineon-BSC0803LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708712944b1d3c Description: MOSFET N-CH 100V 10A/44A TDSON-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 20585 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.44 EUR
10+3.08 EUR
100+2.4 EUR
500+1.99 EUR
1000+1.57 EUR
2000+1.46 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS40E6433HTMA1 BAS40E6433HTMA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Schottky
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.58 EUR
59+0.36 EUR
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FP50R12W2T7B11BOMA1 FP50R12W2T7B11BOMA1 Infineon Technologies Infineon-FP50R12W2T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f186fc3272fe Description: IGBT MOD 1200V 50A AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
1+97.33 EUR
15+70.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IM393M6FPXKLA1 IM393M6FPXKLA1 Infineon Technologies Infineon-IM393-M6FP-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01740afd4fc371ae Description: MODULE IGBT 600V 10A 26PWRSIP
Voltage: 600 V
Current: 10 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT17E6327 INFNS15700-1.pdf?t.download=true&u=5oefqw
BAT17E6327
Hersteller: Infineon Technologies
Description: BAT17 - RF MIXER AND DETECTOR SC
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT1707E6327
Hersteller: Infineon Technologies
Description: MIXER DIODE, VHF TO UHF
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSM200GA120DN2FS
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DD89N16KKHPSA1 INFNS29284-1.pdf?t.download=true&u=5oefqw
DD89N16KKHPSA1
Hersteller: Infineon Technologies
Description: DIODE ARRAY MOD 1200V 140A
Produkt ist nicht verfügbar
Mindestbestellmenge: 15 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLF11251EPXUMA1 Infineon-TLF11251EP-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a01772419f728582d
TLF11251EPXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-PowerTSSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.35V ~ 7V
Input Type: Non-Inverting
Supplier Device Package: PG-TSDSO-14-5
Rise / Fall Time (Typ): 60ns, 60ns
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 2.31V, 4.69V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1504 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.97 EUR
10+2.94 EUR
25+2.69 EUR
100+2.4 EUR
250+2.26 EUR
500+2.19 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TDA5201 TDA5201.pdf?t.download=true&amp;u=n9mhyd
TDA5201
Hersteller: Infineon Technologies
Description: ASK SINGLE CONVERSION RECEIVER
Packaging: Bulk
Features: RSSI Equipped
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 315MHz ~ 345MHz
Modulation or Protocol: ASK
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: Alarm Systems, Communication Systems, Remote Control Systems
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
auf Bestellung 40048 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
176+3.12 EUR
Mindestbestellmenge: 176 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TDA5201GEG Infineon-TDA5201-DS-v01_06-EN.pdf?fileId=5546d4625debb399015e286e5c233cb3
TDA5201GEG
Hersteller: Infineon Technologies
Description: ASK SINGLE CONVERSION RECEIVER
Frequency: 315MHz ~ 345MHz
Mounting Type: Surface Mount
Sensitivity: -113dBm
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Features: RSSI Equipped
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-TSSOP-28
Antenna Connector: PCB, Surface Mount
Applications: Alarm Systems, Communication Systems
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Modulation or Protocol: ASK
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
180+3.19 EUR
Mindestbestellmenge: 180 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEF 80902 H V1.1 PEF%2080902.pdf
PEF 80902 H V1.1
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: Second Generation Modular
Interface: ISDN
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.3V
Supplier Device Package: P-MQFP-44
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 96 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS16E6393 INFNS10853-1.pdf?t.download=true&u=5oefqw
BAS16E6393
Hersteller: Infineon Technologies
Description: RECTIFIER DIODE
auf Bestellung 144000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 11269 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS16E6433HTMA1 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
BAS16E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE STANDARD 80V 250MA PGSOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
auf Bestellung 1677539 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5594+0.092 EUR
Mindestbestellmenge: 5594 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BGS12P2L6E6327XTSA1 Infineon-BGS12P2L6-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d4487d53603ce
BGS12P2L6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPDT 6GHZ TSLP6-4
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
RF Type: GSM, LTE, W-CDMA
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 0.51dB
Frequency Range: 50MHz ~ 6GHz
Test Frequency: 5.925GHz
Isolation: 27dB
Supplier Device Package: PG-TSLP-6-4
IIP3: 74dBm
auf Bestellung 174685 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
31+0.69 EUR
35+0.6 EUR
38+0.56 EUR
100+0.51 EUR
250+0.49 EUR
500+0.46 EUR
1000+0.45 EUR
5000+0.4 EUR
Mindestbestellmenge: 31 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRS26072DSTRPBF fundamentals-of-power-semiconductors
IRS26072DSTRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Part Status: Obsolete
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 150ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
auf Bestellung 11702 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
185+2.99 EUR
Mindestbestellmenge: 185 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRS2609DSTRPBF-INF
IRS2609DSTRPBF-INF
Hersteller: Infineon Technologies
Description: IRS2609D - HALF-BRIDGE DRIVER
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 150ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Part Status: Active
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.2V
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9015QUXUMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
TLE9015QUXUMA1
Hersteller: Infineon Technologies
Description: IC BATT BALANCER TQFP-48-11
Supplier Device Package: PG-TQFP-48-11
Interface: UART
Function: Battery Balancer
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TLE9015QUXUMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
TLE9015QUXUMA1
Hersteller: Infineon Technologies
Description: IC BATT BALANCER TQFP-48-11
Supplier Device Package: PG-TQFP-48-11
Interface: UART
Function: Battery Balancer
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PROFETMOTHERBRDTOBO1 Profet+_Demoboard_V14.pdf?fileId=5546d4614815da8801484091b947131c
PROFETMOTHERBRDTOBO1
Hersteller: Infineon Technologies
Description: MOTHERBOARD PROFET 12V/24V
Part Status: Active
Supplied Contents: Board(s)
Type: Interface
Function: Automotive
Packaging: Box
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+478.65 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SPOC2MOTHERBOARDTOBO1 Infineon-SPOC_Application_UserManual-UM-v01_00-EN.pdf?fileId=5546d462636cc8fb0163ee3784416c4c
SPOC2MOTHERBOARDTOBO1
Hersteller: Infineon Technologies
Description: SPOC+2 MOTHERBOARD
Part Status: Active
Supplied Contents: Board(s)
Type: Power Management
Function: Switch
Packaging: Box
Secondary Attributes: Graphical User Interface (GUI)
Contents: Board(s)
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+471.74 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TDA21201-S7 TDA21201.pdf
TDA21201-S7
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 30A TO220-7
Packaging: Tube
Features: Bootstrap Circuit
Package / Case: TO-220-7
Mounting Type: Through Hole
Interface: PWM
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 9V ~ 15V
Rds On (Typ): 4.8mOhm LS, 13.3mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 30A
Technology: Power MOSFET
Voltage - Load: 9V ~ 15V
Supplier Device Package: P-TO220-7-230
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Obsolete
auf Bestellung 358 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
123+4.4 EUR
Mindestbestellmenge: 123 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P404ATMA1 Infineon-IPP_B_I120P04P4_04-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f784299de2e44
IPB120P04P404ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 340µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P404ATMA1 Infineon-IPP_B_I120P04P4_04-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f784299de2e44
IPB120P04P404ATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 340µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P4L03ATMA2 Infineon-IPP_B_I120P04P4L_03-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f
IPB120P04P4L03ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.49 EUR
3000+2.24 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P4L03ATMA2 Infineon-IPP_B_I120P04P4L_03-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f783b3b5a2e3f
IPB120P04P4L03ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 340µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9224 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.19 EUR
10+4.7 EUR
50+3.63 EUR
100+3.28 EUR
500+2.69 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P404ATMA2 Infineon-IPP_B_I120P04P4_04-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f784299de2e44
IPB120P04P404ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+2.49 EUR
3000+2.25 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB120P04P404ATMA2 Infineon-IPP_B_I120P04P4_04-DS-v01_01-EN.pdf?fileId=db3a30432f69f146012f784299de2e44
IPB120P04P404ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 100A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 340µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14790 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3061 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.2 EUR
10+4.7 EUR
50+3.63 EUR
100+3.28 EUR
500+2.7 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IDD03SG60CXTMA2 Infineon-IDD03SG60C-DS-v02_04-en.pdf?fileId=db3a304327b897500127dcb296f11a53
IDD03SG60CXTMA2
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 600V 3A PGTO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 60pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: PG-TO252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A
Current - Reverse Leakage @ Vr: 15 µA @ 600 V
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.59 EUR
10+3.61 EUR
100+2.46 EUR
500+1.98 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLT807B0EPVXUMA1 Infineon-TLT807B0EPV-DS-v01_00-EN.pdf?fileId=5546d4625bd71aa0015c10aadbe33e93
TLT807B0EPVXUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 70MA TSDSO14
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 70mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 20V
Supplier Device Package: PG-TSDSO-14-1
Number of Regulators: 1
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 70mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLT807B0EPVXUMA1 Infineon-TLT807B0EPV-DS-v01_00-EN.pdf?fileId=5546d4625bd71aa0015c10aadbe33e93
TLT807B0EPVXUMA1
Hersteller: Infineon Technologies
Description: IC REG LIN POS ADJ 70MA TSDSO14
Current - Quiescent (Iq): 36 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 70mA
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 70mA
PSRR: 60dB (100Hz)
Part Status: Active
Control Features: Current Limit, Enable
Voltage - Output (Min/Fixed): 1.2V
Voltage - Output (Max): 20V
Supplier Device Package: PG-TSDSO-14-1
Number of Regulators: 1
Voltage - Input (Max): 42V
auf Bestellung 2618 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.32 EUR
10+3.88 EUR
25+3.67 EUR
100+3.12 EUR
250+2.93 EUR
500+2.56 EUR
1000+2.12 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD90P04P4L04ATMA2 Infineon-IPD90P04P4L-04-DataSheet-v01_02-EN.pdf?fileId=db3a30432f69f146012f7829059b2dee
IPD90P04P4L04ATMA2
Hersteller: Infineon Technologies
Description: MOSFET P-CH 40V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 90A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-313
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +5V, -16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5623 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.4 EUR
10+3.49 EUR
50+2.67 EUR
100+2.39 EUR
500+1.93 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC052N08NS5ATMA1 Infineon-BSC052N08NS5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ae38fc94f2b40
BSC052N08NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 95A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 47.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
auf Bestellung 17235 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.4 EUR
10+2.82 EUR
50+2.13 EUR
100+1.92 EUR
500+1.52 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB180N03S4L-01 INFNS14088-1.pdf?t.download=true&u=5oefqw
IPB180N03S4L-01
Hersteller: Infineon Technologies
Description: IPB180N03 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 140µA
Supplier Device Package: PG-TO263-7-3-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 239 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPB80N03S203GATMA1 SP%28I%2CP%2CB%2980N03S2-03.pdf
SPB80N03S203GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
188+2.93 EUR
Mindestbestellmenge: 188 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPB180N03S4L-H0 INFNS14089-1.pdf?t.download=true&u=5oefqw
IPB180N03S4L-H0
Hersteller: Infineon Technologies
Description: IPB180N03 - 20V-40V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 200µA
Supplier Device Package: PG-TO263-7-3-10
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI80N03S4L-03 INFNS10791-1.pdf?t.download=true&u=5oefqw
IPI80N03S4L-03
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO262-3-1
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 9750 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI80N03S4L-04 INFNS14810-1.pdf?t.download=true&u=5oefqw
IPI80N03S4L-04
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPB80N03S4L-03 INFNS14810-1.pdf?t.download=true&u=5oefqw
IPB80N03S4L-03
Hersteller: Infineon Technologies
Description: IPB80N03 - 20V-40V N-CHANNEL AUT
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Power Dissipation (Max): 94W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPP023N04NGHKSA1 Infineon-IPB023N04N-DS-v01_02-en.pdf?fileId=db3a30432313ff5e01239f000f097121
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 90A TO220-3
Packaging: Tube
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPI023NE7N3G INFN-S-A0001299495-1.pdf?t.download=true&u=5oefqw
IPI023NE7N3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Part Status: Active
Supplier Device Package: PG-TO262-3
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Bulk
auf Bestellung 5746 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
143+4.41 EUR
Mindestbestellmenge: 143 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAT24-02LSE6327 INFNS15702-1.pdf?t.download=true&u=5oefqw
BAT24-02LSE6327
Hersteller: Infineon Technologies
Description: DIODE SCHOTT 4V 110MA TSSLP-2-1
Power Dissipation (Max): 100 mW
Current - Max: 110 mA
Part Status: Active
Supplier Device Package: PG-TSSLP-2-1
Voltage - Peak Reverse (Max): 4V
Capacitance @ Vr, F: 0.23pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - Single
Package / Case: 0201 (0603 Metric)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFI4019H-117PXKMA1 irfi4019h-117p.pdf?fileId=5546d462533600a401535623d74d1f6f
IRFI4019H-117PXKMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 150V 8.7A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Full Pack, Formed Leads
Mounting Type: Through Hole
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 18W (Tc)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 810pF @ 25V
Rds On (Max) @ Id, Vgs: 95mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Vgs(th) (Max) @ Id: 4.9V @ 50µA
Supplier Device Package: TO-220-5 Full-Pak
Part Status: Active
auf Bestellung 260 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.41 EUR
50+3.21 EUR
100+2.9 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TLE4945LHALA1 TLE49x5L.pdf
TLE4945LHALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR 3SSO
Part Status: Last Time Buy
Test Condition: 25°C
Current - Supply (Max): 8mA
Current - Output (Max): 100mA
Sensing Range: ±6mT Trip, ±10mT Release
Technology: Hall Effect
Voltage - Supply: 3.8V ~ 24V
Operating Temperature: -40°C ~ 150°C
Function: Bipolar Switch
Polarization: North Pole, South Pole
Output Type: Open Collector
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN50R3K0CE Infineon-IPN50R3K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547adae0c05ad5
Hersteller: Infineon Technologies
Description: SMALL SIGNAL FIELD-EFFECT TRANSI
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SP001461194 Infineon-IPN50R2K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac89b1f5aaa
Hersteller: Infineon Technologies
Description: IPN50R2K0CEATMA1 - MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IPN50R950CE INFN-S-A0002272334-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: COOLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-261-3
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC333LP32F200FAAKXUMA1 infineon-tc33x-tc32x-aa-step-datasheet-datasheet-en.pdf
TC333LP32F200FAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IGP40N65H5 INFN-S-A0001300424-1.pdf?t.download=true&u=5oefqw
IGP40N65H5
Hersteller: Infineon Technologies
Description: IGP40N65 - DISCRETE IGBT WITHOUT
Power - Max: 250 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 74 A
Part Status: Active
Gate Charge: 95 nC
Test Condition: 400V, 20A, 15Ohm, 15V
Switching Energy: 390µJ (on), 120µJ (off)
Td (on/off) @ 25°C: 22ns/165ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO220-3
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSL302SNL6327 INFNS16736-1.pdf?t.download=true&u=5oefqw
BSL302SNL6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSOP6-6-6
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSL302SNH6327XTSA1 BSL302SN.pdf
BSL302SNH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 7.1A TSOP-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFR540ZTRLPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
IRFR540ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.04 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRFR540ZTRLPBF irfr540zpbf.pdf?fileId=5546d462533600a4015356325b2c2102
IRFR540ZTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 21A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
auf Bestellung 8950 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.75 EUR
10+2.39 EUR
50+1.81 EUR
100+1.62 EUR
500+1.29 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRSM515-044DA-INF IRSDS19334-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 3A 23DIP
Part Status: Active
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 200V (Max)
Technology: MOSFET (Metal Oxide)
Current - Peak Output: 15A
Current - Output / Channel: 3A
Applications: AC Motors
Rds On (Typ): 800mOhm LS, 800mOhm HS
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module (0.573", 14.55mm)
Features: Bootstrap Circuit
Packaging: Bulk
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
66+8.23 EUR
Mindestbestellmenge: 66 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS5234G INFNS05973-1.pdf?t.download=true&u=5oefqw
BTS5234G
Hersteller: Infineon Technologies
Description: HALF-BRIDGE PERIPHERAL DRIVER
Part Status: Active
Packaging: Bulk
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
125+5.05 EUR
Mindestbestellmenge: 125 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BTS5234GXUMA1 BTS5234G.pdf
BTS5234GXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-20
Part Status: Obsolete
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-20-21
Ratio - Input:Output: 1:1
Current - Output (Max): 3.3A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.5V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 45mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Features: Auto Restart, Status Flag
Packaging: Bulk
auf Bestellung 510 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
115+5.05 EUR
Mindestbestellmenge: 115 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IGD10N65T6ARMA1 Infineon-IGD10N65T6-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766c359b640dde
IGD10N65T6ARMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 23A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 8.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/106ns
Switching Energy: 200µJ (on), 70µJ (off)
Test Condition: 400V, 8.5A, 47Ohm, 15V
Gate Charge: 27 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 42.5 A
Power - Max: 75 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
S2GO3DTLE493DW2B6A0TOBO1 shield2go-boards-and-my-iot-adapter-fast-flexible-and-easy-prototyping-for-iot-applications-5546d4626b2d8e69016b503f3cce0810
S2GO3DTLE493DW2B6A0TOBO1
Hersteller: Infineon Technologies
Description: TLE493DW2B6 3DSENSE SHIELD2GO
Packaging: Box
Function: Magnetic Hall Effect
Type: Sensor
Contents: Board(s)
Utilized IC / Part: TLE493D-W2B6
Platform: Shield2Go
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MB90223PF-GT-269-BNDE1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 120PQFP
DigiKey Programmable: Not Verified
Number of I/O: 102
Part Status: Obsolete
Supplier Device Package: 120-QFP (28x28)
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 16x10b
Core Processor: F²MC-16F
Program Memory Type: Mask ROM
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 3K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 120-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSC0803LSATMA1 Infineon-BSC0803LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708712944b1d3c
BSC0803LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10A/44A TDSON-6
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+1.39 EUR
10000+1.33 EUR
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BSC0803LSATMA1 Infineon-BSC0803LS-DataSheet-v02_01-EN.pdf?fileId=5546d462700c0ae601708712944b1d3c
BSC0803LSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10A/44A TDSON-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 22A, 10V
Power Dissipation (Max): 2.5W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TDSON-8-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
auf Bestellung 20585 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.44 EUR
10+3.08 EUR
100+2.4 EUR
500+1.99 EUR
1000+1.57 EUR
2000+1.46 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BAS40E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS40E6433HTMA1
Hersteller: Infineon Technologies
Description: DIODE SCHOTTKY 40V 120MA PGSOT23
Reverse Recovery Time (trr): 100 ps
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Schottky
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
36+0.58 EUR
59+0.36 EUR
Mindestbestellmenge: 36 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FP50R12W2T7B11BOMA1 Infineon-FP50R12W2T7_B11-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170f186fc3272fe
FP50R12W2T7B11BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 50A AG-EASY2B-2
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: AG-EASY2B-2
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 8 µA
Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
auf Bestellung 57 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+97.33 EUR
15+70.71 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IM393M6FPXKLA1 Infineon-IM393-M6FP-DataSheet-v02_00-EN.pdf?fileId=5546d46273a5366f01740afd4fc371ae
IM393M6FPXKLA1
Hersteller: Infineon Technologies
Description: MODULE IGBT 600V 10A 26PWRSIP
Voltage: 600 V
Current: 10 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerSIP Module, 22 Leads, Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 210 384 385 386 387 388 389 390 391 392 393 394 420 630 840 1050 1260 1470 1680 1890 2100 2109  [ Nächste Seite >> ]