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S26KL256SDABHB020 S26KL256SDABHB020 Infineon Technologies Description: IC FLASH 256MBIT PAR 24FBGA
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BTS41K0S-ME-N BTS41K0S-ME-N Infineon Technologies INFN-S-A0000026720-1.pdf?t.download=true&u=5oefqw Description: BTS41K0 - PROFET - SMART HIGH SI
Features: Slew Rate Controlled
Packaging: Bulk
Part Status: Active
Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-SOT223-4
Ratio - Input:Output: 1:1
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.9V ~ 45V
Input Type: Non-Inverting
Rds On (Typ): 800mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
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BTS426L1E3062A Infineon Technologies INFN-S-A0000026959-1.pdf?t.download=true&u=5oefqw Description: AUTOMOTIVE SMART HIGH SIDE SWITC
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: Logic
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Ratio - Input:Output: 1:1
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Input Type: Non-Inverting
Rds On (Typ): 50mOhm
Output Configuration: High Side
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Reverse Current, Short Circuit, UVLO
Supplier Device Package: PG-TO263-5-2
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BCR185SE6327 BCR185SE6327 Infineon Technologies INFNS11751-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Part Status: Active
Packaging: Bulk
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BCR185SH6327TR BCR185SH6327TR Infineon Technologies INFNS11751-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
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BCR185SH6327 BCR185SH6327 Infineon Technologies INFNS11751-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SOT363-6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
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CYWB0124ABX-FDXI CYWB0124ABX-FDXI Infineon Technologies CYPRS10413-1.pdf?t.download=true&u=5oefqw Description: IC WEST BRIDGE ANTIOCH 81-WLCSP
DigiKey Programmable: Not Verified
Supplier Device Package: 81-WLCSP (3.8x3.8)
Package / Case: 81-UFBGA, WLCSP
Packaging: Bulk
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TC377TX96F300SAAKXUMA1 TC377TX96F300SAAKXUMA1 Infineon Technologies infineon-sak-tc37x-datasheet-en.pdf Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 3M x 8
Program Memory Size: 6MB (6M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, I2S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit Tri-Core
DigiKey Programmable: Not Verified
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IKD06N65ET6ARMA1 IKD06N65ET6ARMA1 Infineon Technologies Infineon-IKD06N65ET6-DataSheet-v02_02-EN.pdf?fileId=5546d462766a0c1701766c3574c70dd8 Description: IGBT TRENCH FS 650V 9A TO252-3
Power - Max: 31 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Gate Charge: 13.7 nC
Test Condition: 400V, 3A, 47Ohm, 15V
Switching Energy: 60µJ (on), 30µJ (off)
Td (on/off) @ 25°C: 15ns/35ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO252-3
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 3A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Current - Collector (Ic) (Max): 9 A
Part Status: Not For New Designs
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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IRFH8202TRPBFTR IRFH8202TRPBFTR Infineon Technologies Description: IRFH8202 - 12V-300V N-CHANNEL PO
Packaging: Bulk
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SABC505CA4EMCABXUMA1 SABC505CA4EMCABXUMA1 Infineon Technologies Infineon-C505DB-DS-v01_01-en.pdf?fileId=db3a304412b407950112b41a77922aa7 Description: LEGACY MICROCONTROLLER, 8 BIT, 8
Number of I/O: 34
Part Status: Active
Supplier Device Package: PG-MQFP-44-2
Peripherals: POR, PWM, WDT
Connectivity: CANbus, UART/USART
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Core Processor: C500
Program Memory Type: OTP
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 1.25K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 44-QFP
Packaging: Bulk
Core Size: 8-Bit
Data Converters: A/D 8x10b SAR
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CY15B064Q-SXA CY15B064Q-SXA Infineon Technologies Infineon-CY15B064Q_64-Kbit_(8_K_x_8)_Serial_(SPI)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3eedf6a94&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 64KBIT SPI 20MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.65V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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ICB1FL02G ICB1FL02G Infineon Technologies INFNS14321-1.pdf?t.download=true&u=5oefqw Description: FLUORESCENT LIGHT CONTROLLER, VO
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Frequency: 20kHz ~ 150kHz
Type: PFC/Ballast Controller
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10.5V ~ 17.5V
Supplier Device Package: PG-DSO-18-2
Dimming: No
Current - Supply: 5 mA
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ICB1FL02GXUMA1 ICB1FL02GXUMA1 Infineon Technologies Datasheet-ICB1FL02G-V1-2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b436658d6610 Description: IC PFC/BALLAST CTR 100KHZ DSO-18
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Frequency: 20kHz ~ 100kHz
Type: PFC/Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 10.5V ~ 17.5V
Supplier Device Package: PG-DSO-18-2
Dimming: No
Current - Supply: 5 mA
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MB95F283KPF-G-SNERE1 MB95F283KPF-G-SNERE1 Infineon Technologies 5047 Description: IC MCU 8BIT 128KB FLASH 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 5x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 16-SOP
Part Status: Obsolete
Number of I/O: 13
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TLE49643MXTMA1 TLE49643MXTMA1 Infineon Technologies Infineon-TLE4964_3M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc94b7c0f64f9 Description: MAG SWITCH IC HALL EFF SOT23-3
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 2mA
Sensing Range: ±5mT Trip, ±4.2mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 32V
Operating Temperature: -40°C ~ 170°C
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: Either
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
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TLE49643MXTMA1 TLE49643MXTMA1 Infineon Technologies Infineon-TLE4964_3M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc94b7c0f64f9 Description: MAG SWITCH IC HALL EFF SOT23-3
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 2mA
Sensing Range: ±5mT Trip, ±4.2mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 32V
Operating Temperature: -40°C ~ 170°C
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: Either
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
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TLE4964-1M TLE4964-1M Infineon Technologies Infineon-TLE4964_1M-DS-v01_00-en.pdf?fileId=db3a3043397219b601397256e86f0059 Description: TLE4964 - HALL SWITCH
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 23.5mT Trip, 8.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Bulk
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TLE49642MXTMA1 TLE49642MXTMA1 Infineon Technologies Infineon-TLE4964_2M-DS-v01_00-en.pdf?fileId=db3a3043397219b60139725f709a006f Description: MAG SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 36mT Trip, 15.9mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
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TLE49644MXTSA1 TLE49644MXTSA1 Infineon Technologies Infineon-TLE4964_4M-DS-v01_00-en.pdf?fileId=db3a30434039e4f701404e34e1192005 Description: MAGNETIC SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 13.5mT Trip, 5.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
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TLE49644MXTSA1 TLE49644MXTSA1 Infineon Technologies Infineon-TLE4964_4M-DS-v01_00-en.pdf?fileId=db3a30434039e4f701404e34e1192005 Description: MAGNETIC SWITCH UNIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, 5.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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TLE49641KXTSA1 TLE49641KXTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 18mT Trip, 12.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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TLE49641KXTSA1 TLE49641KXTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 18mT Trip, 12.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
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TLE49645MXTMA1 TLE49645MXTMA1 Infineon Technologies Infineon-TLE4964_5M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc959c5666509 Description: MAG SWITCH IC HALL EFF SOT23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
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TLE49645MXTMA1 TLE49645MXTMA1 Infineon Technologies Infineon-TLE4964_5M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc959c5666509 Description: MAG SWITCH IC HALL EFF SOT23-3
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 13.9mT Trip, 5mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 150°C
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Collector
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
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TLE49641MXTMA1 TLE49641MXTMA1 Infineon Technologies Infineon-TLE4964_1M-DS-v01_00-en.pdf?fileId=db3a3043397219b601397256e86f0059 Description: MAG SWITCH IC HALL EFF SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Operating Temperature: -40°C ~ 170°C (TJ)
Packaging: Tape & Reel (TR)
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TLE49641MXTMA1 TLE49641MXTMA1 Infineon Technologies Infineon-TLE4964_1M-DS-v01_00-en.pdf?fileId=db3a3043397219b601397256e86f0059 Description: MAG SWITCH IC HALL EFF SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Operating Temperature: -40°C ~ 170°C (TJ)
Packaging: Cut Tape (CT)
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BTS5233-2GS Infineon Technologies Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
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BTS52332GSXUMA1 Infineon Technologies Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BTS52372GXUMA1 Infineon Technologies Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
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BTS5264SFXUMA1 Infineon Technologies Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
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TLE4470GXUMA2 TLE4470GXUMA2 Infineon Technologies Infineon-TLE4470-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f72bf071f3a Description: IC REG LINEAR POS ADJ 14DSO
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V, (5V), Tracking
Voltage - Output (Max): 20V
Supplier Device Package: PG-DSO-14
Number of Regulators: 2
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 500 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA, 250mA
Mounting Type: Surface Mount
Output Type: Adjustable (Fixed)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Supply (Max): 15 mA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA, 0.6V @ 200mA
PSRR: 60dB (20Hz ~ 20kHz)
Qualification: AEC-Q100
Grade: Automotive
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BCX68-16 BCX68-16 Infineon Technologies INFNS17218-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 20V 1A SOT89
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
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BCX68-25 BCX68-25 Infineon Technologies INFNS17218-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
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BCX68-25E6327 BCX68-25E6327 Infineon Technologies INFNS12871-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
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BCX68-16E6327 BCX68-16E6327 Infineon Technologies INFNS12871-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: PG-SOT89-4-2
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
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BCX6816E6327HTSA1 BCX6816E6327HTSA1 Infineon Technologies bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7 Description: TRANS NPN 20V 1A PG-SOT89
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
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BCX6816H6327XTSA1 BCX6816H6327XTSA1 Infineon Technologies bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7 Description: TRANS NPN 20V 1A PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Last Time Buy
Supplier Device Package: PG-SOT89
Qualification: AEC-Q101
Grade: Automotive
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BTS3118D BTS3118D Infineon Technologies INFNS11531-1.pdf?t.download=true&u=5oefqw Description: BTS3118 - HITFET, AUTOMOTIVE SMA
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-TO252-3-11
Ratio - Input:Output: 1:1
Current - Output (Max): 2.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V
Input Type: Non-Inverting
Rds On (Typ): 70mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Slew Rate Controlled
Packaging: Bulk
Produkt ist nicht verfügbar
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S26KS128SDGBHA030 S26KS128SDGBHA030 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
Memory Organization: 16M x 8
Access Time: 96 ns
Produkt ist nicht verfügbar
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BSZ0910NDXTMA1 BSZ0910NDXTMA1 Infineon Technologies Infineon-BSZ0910ND-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016054778b852cc4 Description: DIFFERENTIATED MOSFETS
Part Status: Obsolete
Supplier Device Package: PG-WISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.9W (Ta), 31W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSZ0910NDXTMA1 BSZ0910NDXTMA1 Infineon Technologies Infineon-BSZ0910ND-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016054778b852cc4 Description: DIFFERENTIATED MOSFETS
Part Status: Obsolete
Supplier Device Package: PG-WISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.9W (Ta), 31W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPA052N08NM5SXKSA1 IPA052N08NM5SXKSA1 Infineon Technologies Infineon-IPA052N08NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfde8986e2a Description: MOSFET N-CH 80V 64A TO220
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 3.8V @ 65µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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IRF150P220AKMA1 IRF150P220AKMA1 Infineon Technologies Infineon-IRF150P220-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9 Description: MOSFET N-CH 150V 203A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 265µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 75 V
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50+11.19 EUR
100+10.33 EUR
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IRF150P221AKMA1 IRF150P221AKMA1 Infineon Technologies Infineon-IRF150P221-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166acab699365cd Description: MOSFET N-CH 150V 186A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 186A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V
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PBL38621/2SOT PBL38621/2SOT Infineon Technologies fundamentals-of-power-semiconductors Description: IC TELECOM INTERFACE PDSO-24
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
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94+5.75 EUR
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PBL38620/2SHA PBL38620/2SHA Infineon Technologies PBL38620%2C2%20v2.pdf Description: IC TELECOM INTERFACE 24-SSOP
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-SSOP-24-1
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 290 mW
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CY7C1382B-133AC CY7C1382B-133AC Infineon Technologies CY7C1380B%2C%201382B.pdf Description: IC SRAM 18MBIT 133MHZ 100LQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4.2 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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BSP321PH6327XTSA1 BSP321PH6327XTSA1 Infineon Technologies Infineon-BSP321P-DS-v01_06-en.pdf?fileId=db3a30433b47825b013b605d0e215a39 Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
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BTS500251TADATMA1 BTS500251TADATMA1 Infineon Technologies Infineon-BTS50025-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36cff24613 Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Part Status: Obsolete
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Supplier Device Package: P/PG-TO-263-7-10
Ratio - Input:Output: 1:1
Current - Output (Max): 25A
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 18V
Input Type: Non-Inverting
Rds On (Typ): 3.9mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MB90F349CEPF-G-N2E1 MB90F349CEPF-G-N2E1 Infineon Technologies Description: IC MCU 16BIT 256KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 80
Part Status: Obsolete
Supplier Device Package: 100-QFP (14x20)
Peripherals: DMA, POR, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 24x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
Produkt ist nicht verfügbar
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MB90F349CESPMC-G-N9E1 MB90F349CESPMC-G-N9E1 Infineon Technologies Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSZ039N06NSATMA1 BSZ039N06NSATMA1 Infineon Technologies Infineon-BSZ039N06NS-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53c25c8e532d Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
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SPP35N10 SPP35N10 Infineon Technologies SPI%2CSPP35N10.pdf Description: MOSFET N-CH 100V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
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IPB35N10S3L26ATMA1 IPB35N10S3L26ATMA1 Infineon Technologies Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77 Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
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IPB35N10S3L26ATMA1 IPB35N10S3L26ATMA1 Infineon Technologies Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77 Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
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500+1.95 EUR
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TLS810D1LDV33BOARDTOBO1 TLS810D1LDV33BOARDTOBO1 Infineon Technologies Infineon-Z8F55443029_TLS805x1LD-TLS810x1LD-Demoboard-UserManual-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a46f9d9c8037f Description: EVAL BOARD FOR TLS810D1LDV33
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS810D1LDV33
Channels per IC: 1 - Single
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CY9AF131KAPMC-G-SNE2 CY9AF131KAPMC-G-SNE2 Infineon Technologies Description: IC MCU 32BIT 64KB FLASH 48LQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 37
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 6x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Produkt ist nicht verfügbar
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BUZ77B Infineon Technologies INFNS01334-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IPU80R2K8CEAKMA1 IPU80R2K8CEAKMA1 Infineon Technologies Infineon-IPX80R2K8CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f5e5f1f274f Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
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S26KL256SDABHB020
S26KL256SDABHB020
Hersteller: Infineon Technologies
Description: IC FLASH 256MBIT PAR 24FBGA
Produkt ist nicht verfügbar
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BTS41K0S-ME-N INFN-S-A0000026720-1.pdf?t.download=true&u=5oefqw
BTS41K0S-ME-N
Hersteller: Infineon Technologies
Description: BTS41K0 - PROFET - SMART HIGH SI
Features: Slew Rate Controlled
Packaging: Bulk
Part Status: Active
Fault Protection: Current Limiting (Adjustable), Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-SOT223-4
Ratio - Input:Output: 1:1
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 4.9V ~ 45V
Input Type: Non-Inverting
Rds On (Typ): 800mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-261-4, TO-261AA
Produkt ist nicht verfügbar
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BTS426L1E3062A INFN-S-A0000026959-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: AUTOMOTIVE SMART HIGH SIDE SWITC
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: Logic
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Features: Auto Restart, Slew Rate Controlled
Packaging: Bulk
Ratio - Input:Output: 1:1
Current - Output (Max): 7A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5V ~ 34V
Input Type: Non-Inverting
Rds On (Typ): 50mOhm
Output Configuration: High Side
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Reverse Battery, Reverse Current, Short Circuit, UVLO
Supplier Device Package: PG-TO263-5-2
Produkt ist nicht verfügbar
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BCR185SE6327 INFNS11751-1.pdf?t.download=true&u=5oefqw
BCR185SE6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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BCR185SH6327TR INFNS11751-1.pdf?t.download=true&u=5oefqw
BCR185SH6327TR
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SOT363-6-1
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
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BCR185SH6327 INFNS11751-1.pdf?t.download=true&u=5oefqw
BCR185SH6327
Hersteller: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SOT363-6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
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CYWB0124ABX-FDXI CYPRS10413-1.pdf?t.download=true&u=5oefqw
CYWB0124ABX-FDXI
Hersteller: Infineon Technologies
Description: IC WEST BRIDGE ANTIOCH 81-WLCSP
DigiKey Programmable: Not Verified
Supplier Device Package: 81-WLCSP (3.8x3.8)
Package / Case: 81-UFBGA, WLCSP
Packaging: Bulk
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TC377TX96F300SAAKXUMA1 infineon-sak-tc37x-datasheet-en.pdf
TC377TX96F300SAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 6MB FLASH 292LFBGA
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 3M x 8
Program Memory Size: 6MB (6M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 292-LFBGA
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: PG-LFBGA-292-6
Peripherals: DMA, I2S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Core Size: 32-Bit Tri-Core
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IKD06N65ET6ARMA1 Infineon-IKD06N65ET6-DataSheet-v02_02-EN.pdf?fileId=5546d462766a0c1701766c3574c70dd8
IKD06N65ET6ARMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 9A TO252-3
Power - Max: 31 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Gate Charge: 13.7 nC
Test Condition: 400V, 3A, 47Ohm, 15V
Switching Energy: 60µJ (on), 30µJ (off)
Td (on/off) @ 25°C: 15ns/35ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO252-3
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 3A
Reverse Recovery Time (trr): 30 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Current - Collector (Ic) (Max): 9 A
Part Status: Not For New Designs
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFH8202TRPBFTR
IRFH8202TRPBFTR
Hersteller: Infineon Technologies
Description: IRFH8202 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Produkt ist nicht verfügbar
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SABC505CA4EMCABXUMA1 Infineon-C505DB-DS-v01_01-en.pdf?fileId=db3a304412b407950112b41a77922aa7
SABC505CA4EMCABXUMA1
Hersteller: Infineon Technologies
Description: LEGACY MICROCONTROLLER, 8 BIT, 8
Number of I/O: 34
Part Status: Active
Supplier Device Package: PG-MQFP-44-2
Peripherals: POR, PWM, WDT
Connectivity: CANbus, UART/USART
Voltage - Supply (Vcc/Vdd): 4.25V ~ 5.5V
Core Processor: C500
Program Memory Type: OTP
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 1.25K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 44-QFP
Packaging: Bulk
Core Size: 8-Bit
Data Converters: A/D 8x10b SAR
Produkt ist nicht verfügbar
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CY15B064Q-SXA Infineon-CY15B064Q_64-Kbit_(8_K_x_8)_Serial_(SPI)_Automotive-A_F-RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee3eedf6a94&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY15B064Q-SXA
Hersteller: Infineon Technologies
Description: IC FRAM 64KBIT SPI 20MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.65V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Grade: Automotive
Memory Interface: SPI
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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ICB1FL02G INFNS14321-1.pdf?t.download=true&u=5oefqw
ICB1FL02G
Hersteller: Infineon Technologies
Description: FLUORESCENT LIGHT CONTROLLER, VO
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Frequency: 20kHz ~ 150kHz
Type: PFC/Ballast Controller
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10.5V ~ 17.5V
Supplier Device Package: PG-DSO-18-2
Dimming: No
Current - Supply: 5 mA
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ICB1FL02GXUMA1 Datasheet-ICB1FL02G-V1-2.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b436658d6610
ICB1FL02GXUMA1
Hersteller: Infineon Technologies
Description: IC PFC/BALLAST CTR 100KHZ DSO-18
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Frequency: 20kHz ~ 100kHz
Type: PFC/Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 10.5V ~ 17.5V
Supplier Device Package: PG-DSO-18-2
Dimming: No
Current - Supply: 5 mA
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193+2.99 EUR
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MB95F283KPF-G-SNERE1 5047
MB95F283KPF-G-SNERE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 128KB FLASH 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 5x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, SIO, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 16-SOP
Part Status: Obsolete
Number of I/O: 13
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1500+2.13 EUR
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TLE49643MXTMA1 Infineon-TLE4964_3M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc94b7c0f64f9
TLE49643MXTMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 2mA
Sensing Range: ±5mT Trip, ±4.2mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 32V
Operating Temperature: -40°C ~ 170°C
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: Either
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
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10000+0.55 EUR
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TLE49643MXTMA1 Infineon-TLE4964_3M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc94b7c0f64f9
TLE49643MXTMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 2mA
Sensing Range: ±5mT Trip, ±4.2mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 32V
Operating Temperature: -40°C ~ 170°C
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: Either
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
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21+1.02 EUR
24+0.9 EUR
25+0.86 EUR
27+0.8 EUR
50+0.76 EUR
100+0.71 EUR
500+0.64 EUR
1000+0.62 EUR
5000+0.57 EUR
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TLE4964-1M Infineon-TLE4964_1M-DS-v01_00-en.pdf?fileId=db3a3043397219b601397256e86f0059
TLE4964-1M
Hersteller: Infineon Technologies
Description: TLE4964 - HALL SWITCH
Part Status: Active
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 23.5mT Trip, 8.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Bulk
Produkt ist nicht verfügbar
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TLE49642MXTMA1 Infineon-TLE4964_2M-DS-v01_00-en.pdf?fileId=db3a3043397219b60139725f709a006f
TLE49642MXTMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 36mT Trip, 15.9mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
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21+1.02 EUR
24+0.9 EUR
25+0.86 EUR
27+0.8 EUR
50+0.76 EUR
100+0.71 EUR
500+0.64 EUR
1000+0.62 EUR
5000+0.57 EUR
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TLE49644MXTSA1 Infineon-TLE4964_4M-DS-v01_00-en.pdf?fileId=db3a30434039e4f701404e34e1192005
TLE49644MXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 2.5mA
Current - Output (Max): 25mA
Sensing Range: 13.5mT Trip, 5.4mT Release
Technology: Hall Effect
Voltage - Supply: 3V ~ 32V
Operating Temperature: -40°C ~ 170°C (TJ)
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Drain
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TLE49644MXTSA1 Infineon-TLE4964_4M-DS-v01_00-en.pdf?fileId=db3a30434039e4f701404e34e1192005
TLE49644MXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SOT23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 13.5mT Trip, 5.4mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2358 Stücke:
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21+1.02 EUR
24+0.9 EUR
25+0.86 EUR
27+0.8 EUR
50+0.76 EUR
100+0.71 EUR
500+0.64 EUR
1000+0.62 EUR
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TLE49641KXTSA1 fundamentals-of-power-semiconductors
TLE49641KXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 18mT Trip, 12.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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TLE49641KXTSA1 fundamentals-of-power-semiconductors
TLE49641KXTSA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH UNIPOLAR SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 18mT Trip, 12.5mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2059 Stücke:
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19+1.11 EUR
22+0.98 EUR
23+0.93 EUR
25+0.87 EUR
50+0.82 EUR
100+0.79 EUR
500+0.7 EUR
1000+0.68 EUR
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TLE49645MXTMA1 Infineon-TLE4964_5M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc959c5666509
TLE49645MXTMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Surface Mount
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SOT23-3-15
Test Condition: 25°C
auf Bestellung 20000 Stücke:
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10000+0.55 EUR
20000+0.52 EUR
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TLE49645MXTMA1 Infineon-TLE4964_5M-DS-v01_00-en.pdf?fileId=db3a30433cabdd35013cc959c5666509
TLE49645MXTMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Test Condition: 25°C
Supplier Device Package: PG-SOT23-3-15
Current - Supply (Max): 6mA
Current - Output (Max): 20mA
Sensing Range: 13.9mT Trip, 5mT Release
Technology: Hall Effect
Voltage - Supply: 2.7V ~ 18V
Operating Temperature: -40°C ~ 150°C
Function: Unipolar Switch
Mounting Type: Surface Mount
Polarization: South Pole
Output Type: Open Collector
Package / Case: TO-236-3, SC-59, SOT-23-3
Features: Temperature Compensated
Packaging: Cut Tape (CT)
auf Bestellung 34464 Stücke:
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21+1.02 EUR
24+0.9 EUR
25+0.86 EUR
27+0.8 EUR
50+0.76 EUR
100+0.71 EUR
500+0.64 EUR
1000+0.62 EUR
5000+0.57 EUR
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TLE49641MXTMA1 Infineon-TLE4964_1M-DS-v01_00-en.pdf?fileId=db3a3043397219b601397256e86f0059
TLE49641MXTMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Operating Temperature: -40°C ~ 170°C (TJ)
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
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10000+0.55 EUR
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TLE49641MXTMA1 Infineon-TLE4964_1M-DS-v01_00-en.pdf?fileId=db3a3043397219b601397256e86f0059
TLE49641MXTMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH IC HALL EFF SOT23-3
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Operating Temperature: -40°C ~ 170°C (TJ)
Packaging: Cut Tape (CT)
auf Bestellung 14794 Stücke:
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21+1.02 EUR
24+0.9 EUR
25+0.86 EUR
27+0.8 EUR
50+0.76 EUR
100+0.71 EUR
500+0.64 EUR
1000+0.62 EUR
5000+0.57 EUR
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BTS5233-2GS
Hersteller: Infineon Technologies
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 2500 Stücke:
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AnzahlPrivatkunde
1039+0.56 EUR
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BTS52332GSXUMA1
Hersteller: Infineon Technologies
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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BTS52372GXUMA1
Hersteller: Infineon Technologies
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 98000 Stücke:
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AnzahlPrivatkunde
297+1.95 EUR
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BTS5264SFXUMA1
Hersteller: Infineon Technologies
Description: PMIC - POWER DISTRIBUTION SWITCH
Packaging: Bulk
Part Status: Active
auf Bestellung 10000 Stücke:
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AnzahlPrivatkunde
65+9.03 EUR
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TLE4470GXUMA2 Infineon-TLE4470-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f72bf071f3a
TLE4470GXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 14DSO
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V, (5V), Tracking
Voltage - Output (Max): 20V
Supplier Device Package: PG-DSO-14
Number of Regulators: 2
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 500 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 100mA, 250mA
Mounting Type: Surface Mount
Output Type: Adjustable (Fixed)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Supply (Max): 15 mA
Protection Features: Over Current, Over Temperature, Short Circuit
Voltage Dropout (Max): 0.5V @ 100mA, 0.6V @ 200mA
PSRR: 60dB (20Hz ~ 20kHz)
Qualification: AEC-Q100
Grade: Automotive
Produkt ist nicht verfügbar
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BCX68-16 INFNS17218-1.pdf?t.download=true&u=5oefqw
BCX68-16
Hersteller: Infineon Technologies
Description: TRANS NPN 20V 1A SOT89
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
Produkt ist nicht verfügbar
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BCX68-25 INFNS17218-1.pdf?t.download=true&u=5oefqw
BCX68-25
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
auf Bestellung 4000 Stücke:
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BCX68-25E6327 INFNS12871-1.pdf?t.download=true&u=5oefqw
BCX68-25E6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
auf Bestellung 2975 Stücke:
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BCX68-16E6327 INFNS12871-1.pdf?t.download=true&u=5oefqw
BCX68-16E6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: PG-SOT89-4-2
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
Produkt ist nicht verfügbar
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BCX6816E6327HTSA1 bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7
BCX6816E6327HTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 20V 1A PG-SOT89
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
auf Bestellung 31400 Stücke:
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AnzahlPrivatkunde
1598+0.38 EUR
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BCX6816H6327XTSA1 bcx68.pdf?folderId=db3a304314dca38901155ffc06d51dc7&fileId=db3a3043156fd573011589ef403903e7
BCX6816H6327XTSA1
Hersteller: Infineon Technologies
Description: TRANS NPN 20V 1A PG-SOT89
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Bulk
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 1 A
Part Status: Last Time Buy
Supplier Device Package: PG-SOT89
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2000 Stücke:
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AnzahlPrivatkunde
1224+0.5 EUR
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BTS3118D INFNS11531-1.pdf?t.download=true&u=5oefqw
BTS3118D
Hersteller: Infineon Technologies
Description: BTS3118 - HITFET, AUTOMOTIVE SMA
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: PG-TO252-3-11
Ratio - Input:Output: 1:1
Current - Output (Max): 2.4A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 42V
Input Type: Non-Inverting
Rds On (Typ): 70mOhm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Features: Slew Rate Controlled
Packaging: Bulk
Produkt ist nicht verfügbar
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S26KS128SDGBHA030 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS128SDGBHA030
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Memory Interface: HyperBus
Part Status: Active
Supplier Device Package: 24-FBGA (6x8)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tray
Memory Organization: 16M x 8
Access Time: 96 ns
Produkt ist nicht verfügbar
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BSZ0910NDXTMA1 Infineon-BSZ0910ND-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016054778b852cc4
BSZ0910NDXTMA1
Hersteller: Infineon Technologies
Description: DIFFERENTIATED MOSFETS
Part Status: Obsolete
Supplier Device Package: PG-WISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.9W (Ta), 31W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSZ0910NDXTMA1 Infineon-BSZ0910ND-DS-v02_00-EN.pdf?fileId=5546d462602a9dc8016054778b852cc4
BSZ0910NDXTMA1
Hersteller: Infineon Technologies
Description: DIFFERENTIATED MOSFETS
Part Status: Obsolete
Supplier Device Package: PG-WISON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate, 4.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 25A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.9W (Ta), 31W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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IPA052N08NM5SXKSA1 Infineon-IPA052N08NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cfde8986e2a
IPA052N08NM5SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 64A TO220
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 3.8V @ 65µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 218 Stücke:
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AnzahlPrivatkunde
4+6.18 EUR
10+4 EUR
50+3.06 EUR
100+2.76 EUR
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IRF150P220AKMA1 Infineon-IRF150P220-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166aca241ac65c9
IRF150P220AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 203A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 203A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 556W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 265µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 75 V
auf Bestellung 3869 Stücke:
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AnzahlPrivatkunde
2+20.09 EUR
25+12.21 EUR
50+11.19 EUR
100+10.33 EUR
500+8.84 EUR
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IRF150P221AKMA1 Infineon-IRF150P221-DataSheet-v01_01-EN.pdf?fileId=5546d46266a498f50166acab699365cd
IRF150P221AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 186A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 186A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 264µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 75 V
Produkt ist nicht verfügbar
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PBL38621/2SOT fundamentals-of-power-semiconductors
PBL38621/2SOT
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
94+5.75 EUR
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PBL38620/2SHA PBL38620%2C2%20v2.pdf
PBL38620/2SHA
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 24-SSOP
Packaging: Bulk
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-SSOP-24-1
Part Status: Obsolete
Number of Circuits: 1
Power (Watts): 290 mW
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
80+7.13 EUR
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CY7C1382B-133AC CY7C1380B%2C%201382B.pdf
CY7C1382B-133AC
Hersteller: Infineon Technologies
Description: IC SRAM 18MBIT 133MHZ 100LQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 4.2 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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BSP321PH6327XTSA1 Infineon-BSP321P-DS-v01_06-en.pdf?fileId=db3a30433b47825b013b605d0e215a39
BSP321PH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 980MA SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 980mA (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 980mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 380µA
Supplier Device Package: PG-SOT223-4
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 319 pF @ 25 V
auf Bestellung 371 Stücke:
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8+2.76 EUR
12+1.75 EUR
100+1.15 EUR
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BTS500251TADATMA1 Infineon-BTS50025-1TAD-DS-v01_01-EN.pdf?fileId=5546d4625b62cd8a015baf36cff24613
BTS500251TADATMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-7
Part Status: Obsolete
Fault Protection: Over Temperature, Over Voltage, Reverse Battery, Short Circuit
Supplier Device Package: P/PG-TO-263-7-10
Ratio - Input:Output: 1:1
Current - Output (Max): 25A
Qualification: AEC-Q100
Grade: Automotive
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 18V
Input Type: Non-Inverting
Rds On (Typ): 3.9mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MB90F349CEPF-G-N2E1
MB90F349CEPF-G-N2E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 80
Part Status: Obsolete
Supplier Device Package: 100-QFP (14x20)
Peripherals: DMA, POR, WDT
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SCI, UART/USART
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Core Size: 16-Bit
Data Converters: A/D 24x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
Produkt ist nicht verfügbar
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MB90F349CESPMC-G-N9E1
MB90F349CESPMC-G-N9E1
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH 100LQFP
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-16LX
Data Converters: A/D 24x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SCI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Obsolete
Number of I/O: 82
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BSZ039N06NSATMA1 Infineon-BSZ039N06NS-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a53c25c8e532d
BSZ039N06NSATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 18A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-34
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
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5000+1.33 EUR
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SPP35N10 SPI%2CSPP35N10.pdf
SPP35N10
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 26.4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
auf Bestellung 30218 Stücke:
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278+1.98 EUR
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IPB35N10S3L26ATMA1 Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77
IPB35N10S3L26ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
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1000+1.95 EUR
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IPB35N10S3L26ATMA1 Infineon-IPB35N10S3L_26-DS-v01_01-en.pdf?fileId=db3a304330046413013008a994583e77
IPB35N10S3L26ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 39µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 6496 Stücke:
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4+5.28 EUR
10+3.42 EUR
100+2.36 EUR
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TLS810D1LDV33BOARDTOBO1 Infineon-Z8F55443029_TLS805x1LD-TLS810x1LD-Demoboard-UserManual-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a46f9d9c8037f
TLS810D1LDV33BOARDTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR TLS810D1LDV33
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS810D1LDV33
Channels per IC: 1 - Single
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CY9AF131KAPMC-G-SNE2
CY9AF131KAPMC-G-SNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 48-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 37
Supplier Device Package: 48-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, UART/USART
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 6x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Produkt ist nicht verfügbar
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BUZ77B INFNS01334-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 25 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Produkt ist nicht verfügbar
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IPU80R2K8CEAKMA1 Infineon-IPX80R2K8CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402f5e5f1f274f
IPU80R2K8CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 1.9A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 120µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 100 V
auf Bestellung 14499 Stücke:
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586+0.92 EUR
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