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BSZ018N04LS6ATMA1 BSZ018N04LS6ATMA1 Infineon Technologies Infineon-BSZ018N04LS6-DataSheet-v02_01-EN.pdf?fileId=5546d46269e1c0190169e2e8e05601f7 Description: MOSFET N-CH 40V 27A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
auf Bestellung 15000 Stücke:
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5000+1.33 EUR
10000+1.29 EUR
Mindestbestellmenge: 5000
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IPP60R099P7 IPP60R099P7 Infineon Technologies Infineon-IPP60R099P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1979a00e4aaa Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SP000687556 SP000687556 Infineon Technologies Infineon-IPP60R099C6-DS-v02_03-EN.pdf?fileId=db3a30432313ff5e012394c84a4c068e Description: IPP60R099C6XKSA1 - COOLMOS N-CHA
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Produkt ist nicht verfügbar
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IPW60R099P7 IPW60R099P7 Infineon Technologies INFN-S-A0006145443-1.pdf?t.download=true&u=5oefqw Description: 600V, 0.099OHM, N-CHANNEL MOSFET
Packaging: Bulk
Part Status: Active
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IPW60R099C7 IPW60R099C7 Infineon Technologies INFN-S-A0001043994-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 22A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO247
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
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TLE4270-2 TLE4270-2 Infineon Technologies INFNS12041-1.pdf?t.download=true&u=5oefqw Description: IC REG LIN FIXED POS LDO REG 5V
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CY7C2563KV18-400BZXI CY7C2563KV18-400BZXI Infineon Technologies CY7C2561,63,65,76KV18.pdf Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 4M x 18
auf Bestellung 24 Stücke:
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2+445.21 EUR
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CY7C2563KV18-450BZXI CY7C2563KV18-450BZXI Infineon Technologies CY7C2561,63,65,76KV18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 4M x 18
auf Bestellung 406 Stücke:
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CY7C1463KV33-133AXC CY7C1463KV33-133AXC Infineon Technologies Infineon-CY7C1461KV33_CY7C1463KV33_36-Mbit_(1_M_36_2_M_18)_Flow-Through_SRAM_with_NoBL_Architecture-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece7f0c490a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
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BA885E7631HTMA1 BA885E7631HTMA1 Infineon Technologies Description: RF DIODE PIN 50V PG-SC79-2-1
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2-1
Grade: Automotive
Current - Max: 50 mA
Qualification: AEC-Q101
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5323+0.1 EUR
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IEWS20R5135IPBXKMA1 Infineon Technologies Infineon-IEWS20R5135IPB-DS-v02_00-EN.pdf?fileId=5546d46265e7dffd0165eccd826043e0 Description: IGBT PWR MOD 20A 1350V TO247-6
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IPU60R1K4C6AKMA1 IPU60R1K4C6AKMA1 Infineon Technologies Infineon-IPU60R1K4C6-DS-v02_00-en.pdf?fileId=db3a304335c2937a0135ed95b6483119 Description: MOSFET N-CH 600V 3.2A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 2370 Stücke:
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989+0.49 EUR
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IPU60R1K4C6BKMA1 IPU60R1K4C6BKMA1 Infineon Technologies Infineon-IPU60R1K4C6-DS-v02_00-en.pdf?fileId=db3a304335c2937a0135ed95b6483119 Description: MOSFET N-CH 600V 3.2A TO251-3
auf Bestellung 40500 Stücke:
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IPA50R140CP Infineon Technologies INFN-S-A0004583226-1.pdf?t.download=true&u=5oefqw Description: IPA50R140 - 500V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
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BSZ0501NSIATMA1 BSZ0501NSIATMA1 Infineon Technologies Infineon-BSZ0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014cff6f9da822b8 Description: MOSFET N-CH 30V 25A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
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BSZ0501NSIATMA1 BSZ0501NSIATMA1 Infineon Technologies Infineon-BSZ0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014cff6f9da822b8 Description: MOSFET N-CH 30V 25A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
auf Bestellung 4876 Stücke:
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6+3.5 EUR
10+2.24 EUR
100+1.52 EUR
500+1.21 EUR
1000+1.11 EUR
2000+1.03 EUR
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IPD60R210PFD7SAUMA1 IPD60R210PFD7SAUMA1 Infineon Technologies Infineon-IPD60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e226717c7674a Description: MOSFET N-CH 600V 16A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 10000 Stücke:
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2500+0.95 EUR
Mindestbestellmenge: 2500
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IPP220N25NFD IPP220N25NFD Infineon Technologies INFNS29198-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 250V 61A TO220-3
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IR7304STRPBF IR7304STRPBF Infineon Technologies ir7304s.pdf?fileId=5546d462533600a4015355d62a63182e Description: IC GATE DRVR HALF-BRIDGE 8SOIC
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IRFHS8342TRPBFTR Infineon Technologies IRSDS18996-1.pdf?t.download=true&u=5oefqw Description: IRFHS8342 - 20V-100V N-CHANNEL S
Packaging: Bulk
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
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SPD07N60C3ATMA1 SPD07N60C3ATMA1 Infineon Technologies Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4 Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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SPD07N60C3ATMA1 SPD07N60C3ATMA1 Infineon Technologies Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4 Description: LOW POWER_LEGACY
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 2209 Stücke:
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5+4.35 EUR
10+2.8 EUR
100+1.79 EUR
500+1.68 EUR
Mindestbestellmenge: 5
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IPP60R199CP IPP60R199CP Infineon Technologies INFNS17328-1.pdf?t.download=true&u=5oefqw Description: IPP60R199 - 600V COOLMOS N-CHANN
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TDA5221INCT-ND TDA5221INCT-ND Infineon Technologies Infineon-TDA5221-DS-v01_01-EN.pdf?fileId=5546d4625debb399015e2876b8463cf3 Description: ASK/FSK 915MHZ RECEIVER
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 340MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 6.2mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
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TDA5251 TDA5251 Infineon Technologies tda5251_v1.0.pdf?t.download=true&u=5oefqw Description: ASK/FSK 315 MHZ WIRELESS TRANSVR
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Sensitivity: -109dBm
Mounting Type: Surface Mount
Frequency: 315MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 5.5V
Power - Output: 13dBm
Current - Receiving: 8.8mA ~ 9.8mA
Data Rate (Max): 64Kbps
Current - Transmitting: 5.4mA ~ 18.7mA
Supplier Device Package: PG-TSSOP-38
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I²C, SPI
Part Status: Active
DigiKey Programmable: Not Verified
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184+2.64 EUR
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TDA5230 TDA5230 Infineon Technologies Description: ASK/FSK SINGLE RECEIVER
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -111dBm
Mounting Type: Surface Mount
Frequency: 433MHz ~ 450MHz, 865MHz ~ 868MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Applications: RKE, TPM, Security Systems
Current - Receiving: 8mA
Data Rate (Max): 20kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
auf Bestellung 2272 Stücke:
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143+3.39 EUR
Mindestbestellmenge: 143
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TDA5231 TDA5231 Infineon Technologies Description: ASK/FSK SINGLE RECEIVER
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -111dBm
Mounting Type: Surface Mount
Frequency: 302MHz ~ 320MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Applications: RKE, TPM, Security Systems
Current - Receiving: 8.4mA
Data Rate (Max): 20kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
auf Bestellung 2151 Stücke:
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143+3.39 EUR
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TLD5095EL TLD5095EL Infineon Technologies Description: TLD5095 - LITIX POWER - POWER LE
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IKFW50N65ES5XKSA1 IKFW50N65ES5XKSA1 Infineon Technologies Infineon-IKFW50N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972bb321efa Description: IGBT TRENCH FS 650V 74A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 69 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 127 W
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IKZ50N65NH5XKSA IKZ50N65NH5XKSA Infineon Technologies INFN-S-A0000034849-1.pdf?t.download=true&u=5oefqw Description: IKZ50N65 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/252ns
Switching Energy: 350µJ (on), 200µJ (off)
Test Condition: 400V, 25A, 15Ohm, 15V
Gate Charge: 109 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
Produkt ist nicht verfügbar
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AIGB50N65F5ATMA1 AIGB50N65F5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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AIKB40N65DH5ATMA1 AIKB40N65DH5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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AIKB40N65DH5ATMA1 AIKB40N65DH5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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AIKB40N65DF5ATMA1 AIKB40N65DF5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
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AIKB40N65DF5ATMA1 AIKB40N65DF5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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3+7.13 EUR
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IGW40N65H5 IGW40N65H5 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 650V 74A 255W PG-TO247-3
Packaging: Bulk
Part Status: Active
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IGW40N65F5 IGW40N65F5 Infineon Technologies Part_Number_Guide_Web.pdf Description: IGBT 650V 74A 255W PG-TO247-3
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IGW40N65H5AXKSA1 IGW40N65H5AXKSA1 Infineon Technologies IGW40N65H5A.pdf Description: IGBT TRENCH 650V 74A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/149ns
Switching Energy: 360µJ (on), 110µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 92 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
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88+5.15 EUR
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TLI4971A120T5E0001XUMA1 TLI4971A120T5E0001XUMA1 Infineon Technologies Infineon-TLI4971-A120T5-E0001-DataSheet-v01_01-EN.pdf?fileId=5546d462700c0ae6017034d731621b09 Description: CURRENT SENSOR PG-TISON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TISON-8-5
Part Status: Active
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3+6.86 EUR
5+6.16 EUR
10+5.9 EUR
25+5.58 EUR
50+5.37 EUR
100+5.17 EUR
500+4.78 EUR
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MB89485L-G-223-CHIP Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 16KB MROM
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 39
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89983L-G-223-CHIP Infineon Technologies Description: IC MCU 8BIT 8KB MROM
Packaging: Tray
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVAL1EDFG1BHBGANTOBO1 EVAL1EDFG1BHBGANTOBO1 Infineon Technologies Description: COOLGAN EICEDRIVER
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDF5673K, IGOT60R070D1
Supplied Contents: Board(s)
Primary Attributes: Isolated
Part Status: Active
Produkt ist nicht verfügbar
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BTS70202EPAXUMA1 BTS70202EPAXUMA1 Infineon Technologies Infineon-BTS7020-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f10627dfb6ca3 Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 12.7mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
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3000+1.36 EUR
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BTS70202EPAXUMA1 BTS70202EPAXUMA1 Infineon Technologies Infineon-BTS7020-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f10627dfb6ca3 Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 12.7mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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7+2.71 EUR
10+2 EUR
25+1.81 EUR
100+1.62 EUR
250+1.52 EUR
500+1.47 EUR
1000+1.42 EUR
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2ED300C17STROHSBPSA1 2ED300C17STROHSBPSA1 Infineon Technologies Infineon-2ED300C17_S_ST-DS-v04_03-en.pdf?fileId=db3a304412b407950112b429b99741da Description: IGBT MODULE 1700V 30A
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 85°C
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Produkt ist nicht verfügbar
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MB89935BPFV-G-369-ERE1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MCU 8BIT 16KB MROM 30SSOP
Packaging: Tray
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 30-SSOP
Part Status: Obsolete
Number of I/O: 21
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB90563TPFM-G-369-BNDE1 Infineon Technologies Description: IC MICROCONTROLLER 64LQFP
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89165PFV-G-369-BND-RE1 Infineon Technologies Description: IC MCU 8BIT 16KB MROM 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BGSA20VGL8E6327XTSA1 BGSA20VGL8E6327XTSA1 Infineon Technologies Infineon-BGSA20VGL8-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f9201722cfc21123da1 Description: IC RF SWITCH SPST 6GHZ TSNP8-1
Packaging: Cut Tape (CT)
Package / Case: 8-XFQFN
Mounting Type: Surface Mount
Circuit: SPST
RF Type: CDMA, EDGE, LTE, W-CDMA
Voltage - Supply: 1.65V ~ 3.6V
Frequency Range: 6GHz
Supplier Device Package: PG-TSNP-8-1
Produkt ist nicht verfügbar
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S25FL064LABNFB010 S25FL064LABNFB010 Infineon Technologies Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Produkt ist nicht verfügbar
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IRS25411STRPBFCT IRS25411STRPBFCT Infineon Technologies IRSDS13477-1.pdf?t.download=true&u=5oefqw Description: IC LED DRVR CTRLR PWM 700MA 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 8V ~ 16.6V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -25°C ~ 125°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 700mA
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-SO
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 16.6V
Produkt ist nicht verfügbar
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BC817-25B5000 BC817-25B5000 Infineon Technologies INFNS12118-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GENERAL PURPOSE TRANSIST
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 15000 Stücke:
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8955+0.045 EUR
Mindestbestellmenge: 8955
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IGW40N60TP IGW40N60TP Infineon Technologies INFN-S-A0002786816-1.pdf?t.download=true&u=5oefqw Description: IGW40N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/222ns
Switching Energy: 1.06mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 10.1Ohm, 15V
Gate Charge: 177 nC
Part Status: Active
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 246 W
Produkt ist nicht verfügbar
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IPB022N04LG IPB022N04LG Infineon Technologies INFNS16273-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
auf Bestellung 1840 Stücke:
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335+1.5 EUR
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IPB025N08N3 G Infineon Technologies INFN-S-A0002263283-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
Produkt ist nicht verfügbar
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IMBG120R045M1HXTMA1 IMBG120R045M1HXTMA1 Infineon Technologies Infineon-IMBG120R045M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecc4e83263 Description: SICFET N-CH 1.2KV 47A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 16A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1527 pF @ 800 V
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1000+10.19 EUR
Mindestbestellmenge: 1000
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IKW30N65NL5 IKW30N65NL5 Infineon Technologies INFN-S-A0000241585-1.pdf?t.download=true&u=5oefqw Description: IKW30N65 - DISCRETE IGBT WITH AN
Produkt ist nicht verfügbar
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F3L400R10W3S7B11BPSA1 F3L400R10W3S7B11BPSA1 Infineon Technologies Infineon-F3L400R10W3S7_B11-DataSheet-v03_00-EN.pdf?fileId=5546d462712ef9b701717e23fe8d2713 Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 950 V
Current - Collector Cutoff (Max): 70 µA
Input Capacitance (Cies) @ Vce: 25.2 nF @ 25 V
Produkt ist nicht verfügbar
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FF1200R17IP5PBPSA1 FF1200R17IP5PBPSA1 Infineon Technologies Infineon-FF1200R17IP5P-DataSheet-v03_00-EN.pdf?fileId=5546d4627448fb2b017457d84aae414b Description: IGBT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
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1+962.46 EUR
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IPB080N03LGATMA1 IPB080N03LGATMA1 Infineon Technologies IPB%2CIPP080N03LG.pdf Description: MOSFET N-CH 30V 50A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
auf Bestellung 3239 Stücke:
Lieferzeit 10-14 Tag (e)
568+0.8 EUR
Mindestbestellmenge: 568
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BSZ018N04LS6ATMA1 Infineon-BSZ018N04LS6-DataSheet-v02_01-EN.pdf?fileId=5546d46269e1c0190169e2e8e05601f7
BSZ018N04LS6ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 27A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.33 EUR
10000+1.29 EUR
Mindestbestellmenge: 5000
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IPP60R099P7 Infineon-IPP60R099P7-DS-v02_00-EN.pdf?fileId=5546d4625b10283a015b1979a00e4aaa
IPP60R099P7
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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SP000687556 Infineon-IPP60R099C6-DS-v02_03-EN.pdf?fileId=db3a30432313ff5e012394c84a4c068e
SP000687556
Hersteller: Infineon Technologies
Description: IPP60R099C6XKSA1 - COOLMOS N-CHA
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37.9A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 18.1A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.21mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Produkt ist nicht verfügbar
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IPW60R099P7 INFN-S-A0006145443-1.pdf?t.download=true&u=5oefqw
IPW60R099P7
Hersteller: Infineon Technologies
Description: 600V, 0.099OHM, N-CHANNEL MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPW60R099C7 INFN-S-A0001043994-1.pdf?t.download=true&u=5oefqw
IPW60R099C7
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 22A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO247
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Produkt ist nicht verfügbar
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TLE4270-2 INFNS12041-1.pdf?t.download=true&u=5oefqw
TLE4270-2
Hersteller: Infineon Technologies
Description: IC REG LIN FIXED POS LDO REG 5V
Produkt ist nicht verfügbar
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CY7C2563KV18-400BZXI CY7C2561,63,65,76KV18.pdf
CY7C2563KV18-400BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 4M x 18
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+445.21 EUR
Mindestbestellmenge: 2
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CY7C2563KV18-450BZXI CY7C2561,63,65,76KV18.pdf
CY7C2563KV18-450BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 4M x 18
auf Bestellung 406 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+536.32 EUR
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CY7C1463KV33-133AXC Infineon-CY7C1461KV33_CY7C1463KV33_36-Mbit_(1_M_36_2_M_18)_Flow-Through_SRAM_with_NoBL_Architecture-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece7f0c490a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1463KV33-133AXC
Hersteller: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.18 EUR
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BA885E7631HTMA1
BA885E7631HTMA1
Hersteller: Infineon Technologies
Description: RF DIODE PIN 50V PG-SC79-2-1
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2-1
Grade: Automotive
Current - Max: 50 mA
Qualification: AEC-Q101
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5323+0.1 EUR
Mindestbestellmenge: 5323
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IEWS20R5135IPBXKMA1 Infineon-IEWS20R5135IPB-DS-v02_00-EN.pdf?fileId=5546d46265e7dffd0165eccd826043e0
Hersteller: Infineon Technologies
Description: IGBT PWR MOD 20A 1350V TO247-6
Produkt ist nicht verfügbar
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IPU60R1K4C6AKMA1 Infineon-IPU60R1K4C6-DS-v02_00-en.pdf?fileId=db3a304335c2937a0135ed95b6483119
IPU60R1K4C6AKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 2370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
989+0.49 EUR
Mindestbestellmenge: 989
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IPU60R1K4C6BKMA1 Infineon-IPU60R1K4C6-DS-v02_00-en.pdf?fileId=db3a304335c2937a0135ed95b6483119
IPU60R1K4C6BKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO251-3
auf Bestellung 40500 Stücke:
Lieferzeit 10-14 Tag (e)
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IPA50R140CP INFN-S-A0004583226-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IPA50R140 - 500V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
Produkt ist nicht verfügbar
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BSZ0501NSIATMA1 Infineon-BSZ0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014cff6f9da822b8
BSZ0501NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 25A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
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BSZ0501NSIATMA1 Infineon-BSZ0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014cff6f9da822b8
BSZ0501NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 25A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
auf Bestellung 4876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.5 EUR
10+2.24 EUR
100+1.52 EUR
500+1.21 EUR
1000+1.11 EUR
2000+1.03 EUR
Mindestbestellmenge: 6
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IPD60R210PFD7SAUMA1 Infineon-IPD60R210PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626df6ee62016e226717c7674a
IPD60R210PFD7SAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 16A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.95 EUR
Mindestbestellmenge: 2500
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IPP220N25NFD INFNS29198-1.pdf?t.download=true&u=5oefqw
IPP220N25NFD
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 61A TO220-3
Produkt ist nicht verfügbar
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IR7304STRPBF ir7304s.pdf?fileId=5546d462533600a4015355d62a63182e
IR7304STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Produkt ist nicht verfügbar
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IRFHS8342TRPBFTR IRSDS18996-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IRFHS8342 - 20V-100V N-CHANNEL S
Packaging: Bulk
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Produkt ist nicht verfügbar
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SPD07N60C3ATMA1 Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4
SPD07N60C3ATMA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
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SPD07N60C3ATMA1 Infineon-SPD_U07N60C3-DS-v02_07-en.pdf?fileId=db3a30433f1b26e8013f1e7536e102d4
SPD07N60C3ATMA1
Hersteller: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 2209 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.35 EUR
10+2.8 EUR
100+1.79 EUR
500+1.68 EUR
Mindestbestellmenge: 5
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IPP60R199CP INFNS17328-1.pdf?t.download=true&u=5oefqw
IPP60R199CP
Hersteller: Infineon Technologies
Description: IPP60R199 - 600V COOLMOS N-CHANN
Produkt ist nicht verfügbar
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TDA5221INCT-ND Infineon-TDA5221-DS-v01_01-EN.pdf?fileId=5546d4625debb399015e2876b8463cf3
TDA5221INCT-ND
Hersteller: Infineon Technologies
Description: ASK/FSK 915MHZ RECEIVER
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 340MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 6.2mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
auf Bestellung 2711 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
224+2.15 EUR
Mindestbestellmenge: 224
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TDA5251 tda5251_v1.0.pdf?t.download=true&u=5oefqw
TDA5251
Hersteller: Infineon Technologies
Description: ASK/FSK 315 MHZ WIRELESS TRANSVR
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Sensitivity: -109dBm
Mounting Type: Surface Mount
Frequency: 315MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 5.5V
Power - Output: 13dBm
Current - Receiving: 8.8mA ~ 9.8mA
Data Rate (Max): 64Kbps
Current - Transmitting: 5.4mA ~ 18.7mA
Supplier Device Package: PG-TSSOP-38
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I²C, SPI
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
184+2.64 EUR
Mindestbestellmenge: 184
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TDA5230
TDA5230
Hersteller: Infineon Technologies
Description: ASK/FSK SINGLE RECEIVER
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -111dBm
Mounting Type: Surface Mount
Frequency: 433MHz ~ 450MHz, 865MHz ~ 868MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Applications: RKE, TPM, Security Systems
Current - Receiving: 8mA
Data Rate (Max): 20kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
auf Bestellung 2272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
143+3.39 EUR
Mindestbestellmenge: 143
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TDA5231
TDA5231
Hersteller: Infineon Technologies
Description: ASK/FSK SINGLE RECEIVER
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -111dBm
Mounting Type: Surface Mount
Frequency: 302MHz ~ 320MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Applications: RKE, TPM, Security Systems
Current - Receiving: 8.4mA
Data Rate (Max): 20kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
auf Bestellung 2151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
143+3.39 EUR
Mindestbestellmenge: 143
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TLD5095EL
TLD5095EL
Hersteller: Infineon Technologies
Description: TLD5095 - LITIX POWER - POWER LE
Produkt ist nicht verfügbar
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IKFW50N65ES5XKSA1 Infineon-IKFW50N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174d972bb321efa
IKFW50N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 69 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 127 W
auf Bestellung 66 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.86 EUR
30+9.33 EUR
Mindestbestellmenge: 2
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IKZ50N65NH5XKSA INFN-S-A0000034849-1.pdf?t.download=true&u=5oefqw
IKZ50N65NH5XKSA
Hersteller: Infineon Technologies
Description: IKZ50N65 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/252ns
Switching Energy: 350µJ (on), 200µJ (off)
Test Condition: 400V, 25A, 15Ohm, 15V
Gate Charge: 109 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
Produkt ist nicht verfügbar
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AIGB50N65F5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIGB50N65F5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 545 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.99 EUR
10+6.02 EUR
100+4.34 EUR
500+4.28 EUR
Mindestbestellmenge: 2
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AIKB40N65DH5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB40N65DH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.58 EUR
Mindestbestellmenge: 1000
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AIKB40N65DH5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB40N65DH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 2943 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.13 EUR
10+4.71 EUR
100+3.35 EUR
500+3.13 EUR
Mindestbestellmenge: 3
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AIKB40N65DF5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB40N65DF5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
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AIKB40N65DF5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB40N65DF5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.13 EUR
10+4.71 EUR
100+3.35 EUR
500+3.13 EUR
Mindestbestellmenge: 3
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IGW40N65H5 Part_Number_Guide_Web.pdf
IGW40N65H5
Hersteller: Infineon Technologies
Description: IGBT 650V 74A 255W PG-TO247-3
Packaging: Bulk
Part Status: Active
auf Bestellung 45097 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
145+3.41 EUR
Mindestbestellmenge: 145
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IGW40N65F5 Part_Number_Guide_Web.pdf
IGW40N65F5
Hersteller: Infineon Technologies
Description: IGBT 650V 74A 255W PG-TO247-3
Produkt ist nicht verfügbar
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IGW40N65H5AXKSA1 IGW40N65H5A.pdf
IGW40N65H5AXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/149ns
Switching Energy: 360µJ (on), 110µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 92 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
auf Bestellung 3360 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
88+5.15 EUR
Mindestbestellmenge: 88
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TLI4971A120T5E0001XUMA1 Infineon-TLI4971-A120T5-E0001-DataSheet-v01_01-EN.pdf?fileId=5546d462700c0ae6017034d731621b09
TLI4971A120T5E0001XUMA1
Hersteller: Infineon Technologies
Description: CURRENT SENSOR PG-TISON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TISON-8-5
Part Status: Active
auf Bestellung 8427 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.86 EUR
5+6.16 EUR
10+5.9 EUR
25+5.58 EUR
50+5.37 EUR
100+5.17 EUR
500+4.78 EUR
Mindestbestellmenge: 3
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MB89485L-G-223-CHIP ProductGuide_2008.1.pdf
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 39
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89983L-G-223-CHIP
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM
Packaging: Tray
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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EVAL1EDFG1BHBGANTOBO1
EVAL1EDFG1BHBGANTOBO1
Hersteller: Infineon Technologies
Description: COOLGAN EICEDRIVER
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1EDF5673K, IGOT60R070D1
Supplied Contents: Board(s)
Primary Attributes: Isolated
Part Status: Active
Produkt ist nicht verfügbar
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BTS70202EPAXUMA1 Infineon-BTS7020-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f10627dfb6ca3
BTS70202EPAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 12.7mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.36 EUR
Mindestbestellmenge: 3000
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BTS70202EPAXUMA1 Infineon-BTS7020-2EPA-DS-v01_00-EN.pdf?fileId=5546d4625ee5d4cd015f10627dfb6ca3
BTS70202EPAXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 12.7mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 3071 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.71 EUR
10+2 EUR
25+1.81 EUR
100+1.62 EUR
250+1.52 EUR
500+1.47 EUR
1000+1.42 EUR
Mindestbestellmenge: 7
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2ED300C17STROHSBPSA1 Infineon-2ED300C17_S_ST-DS-v04_03-en.pdf?fileId=db3a304412b407950112b429b99741da
2ED300C17STROHSBPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 30A
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 85°C
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Produkt ist nicht verfügbar
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MB89935BPFV-G-369-ERE1 ProductGuide_2008.1.pdf
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 30SSOP
Packaging: Tray
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 30-SSOP
Part Status: Obsolete
Number of I/O: 21
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB90563TPFM-G-369-BNDE1
Hersteller: Infineon Technologies
Description: IC MICROCONTROLLER 64LQFP
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MB89165PFV-G-369-BND-RE1
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 24
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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BGSA20VGL8E6327XTSA1 Infineon-BGSA20VGL8-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f9201722cfc21123da1
BGSA20VGL8E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF SWITCH SPST 6GHZ TSNP8-1
Packaging: Cut Tape (CT)
Package / Case: 8-XFQFN
Mounting Type: Surface Mount
Circuit: SPST
RF Type: CDMA, EDGE, LTE, W-CDMA
Voltage - Supply: 1.65V ~ 3.6V
Frequency Range: 6GHz
Supplier Device Package: PG-TSNP-8-1
Produkt ist nicht verfügbar
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S25FL064LABNFB010 Infineon-S25FL064L_64-Mbit_(8-Mbyte)_3.0_V_FL-L_SPI_Flash_Memory-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2d2846996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL064LABNFB010
Hersteller: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Produkt ist nicht verfügbar
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IRS25411STRPBFCT IRSDS13477-1.pdf?t.download=true&u=5oefqw
IRS25411STRPBFCT
Hersteller: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 700MA 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 8V ~ 16.6V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -25°C ~ 125°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 700mA
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-SO
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 16.6V
Produkt ist nicht verfügbar
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BC817-25B5000 INFNS12118-1.pdf?t.download=true&u=5oefqw
BC817-25B5000
Hersteller: Infineon Technologies
Description: BIPOLAR GENERAL PURPOSE TRANSIST
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8955+0.045 EUR
Mindestbestellmenge: 8955
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IGW40N60TP INFN-S-A0002786816-1.pdf?t.download=true&u=5oefqw
IGW40N60TP
Hersteller: Infineon Technologies
Description: IGW40N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/222ns
Switching Energy: 1.06mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 10.1Ohm, 15V
Gate Charge: 177 nC
Part Status: Active
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 246 W
Produkt ist nicht verfügbar
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IPB022N04LG INFNS16273-1.pdf?t.download=true&u=5oefqw
IPB022N04LG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
auf Bestellung 1840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
335+1.5 EUR
Mindestbestellmenge: 335
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IPB025N08N3 G INFN-S-A0002263283-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
Produkt ist nicht verfügbar
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IMBG120R045M1HXTMA1 Infineon-IMBG120R045M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecc4e83263
IMBG120R045M1HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 47A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 16A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1527 pF @ 800 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+10.19 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
IKW30N65NL5 INFN-S-A0000241585-1.pdf?t.download=true&u=5oefqw
IKW30N65NL5
Hersteller: Infineon Technologies
Description: IKW30N65 - DISCRETE IGBT WITH AN
Produkt ist nicht verfügbar
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F3L400R10W3S7B11BPSA1 Infineon-F3L400R10W3S7_B11-DataSheet-v03_00-EN.pdf?fileId=5546d462712ef9b701717e23fe8d2713
F3L400R10W3S7B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 950 V
Current - Collector Cutoff (Max): 70 µA
Input Capacitance (Cies) @ Vce: 25.2 nF @ 25 V
Produkt ist nicht verfügbar
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FF1200R17IP5PBPSA1 Infineon-FF1200R17IP5P-DataSheet-v03_00-EN.pdf?fileId=5546d4627448fb2b017457d84aae414b
FF1200R17IP5PBPSA1
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+962.46 EUR
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IPB080N03LGATMA1 IPB%2CIPP080N03LG.pdf
IPB080N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
auf Bestellung 3239 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
568+0.8 EUR
Mindestbestellmenge: 568
Im Einkaufswagen  Stück im Wert von  UAH
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