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TLE4928HALA1 TLE4928HALA1 Infineon Technologies Description: MAGNETIC SWITCH SPEC PURP SSO-3
auf Bestellung 2000 Stücke:
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2+12.25 EUR
5+10.8 EUR
10+9.54 EUR
25+7.74 EUR
50+6.84 EUR
100+6.66 EUR
500+6.26 EUR
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TLE4922XANFHALA1 TLE4922XANFHALA1 Infineon Technologies TLE4922XANFHALA1.pdf Description: SEN HALL EFT ANLG VOLT PG-SSO-4
Packaging: Tape & Box (TB)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2000 Stücke:
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TLE4922XANFHALA1 TLE4922XANFHALA1 Infineon Technologies TLE4922XANFHALA1.pdf Description: SEN HALL EFT ANLG VOLT PG-SSO-4
Packaging: Cut Tape (CT)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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10+1.86 EUR
25+1.74 EUR
50+1.67 EUR
100+1.6 EUR
500+1.45 EUR
1000+1.4 EUR
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TLE4926CHTE6547HAMA1 Infineon Technologies Solutions_for_Wind_Energy_Systems.pdf Description: SENSOR HALL EFFECT SSO-3
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IPB80R290C3AATMA2 IPB80R290C3AATMA2 Infineon Technologies Infineon-IPB80R290C3A-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663e7c05663210 Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
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IPB80R290C3AATMA2 IPB80R290C3AATMA2 Infineon Technologies Infineon-IPB80R290C3A-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663e7c05663210 Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2144 Stücke:
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10+6.2 EUR
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500+4.45 EUR
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ICE3AR10080JZ ICE3AR10080JZ Infineon Technologies INFNS17390-1.pdf?t.download=true&u=5oefqw Description: ICE3AR10080 - FIXED FREQUENCY CO
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -20°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 17 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 22 W
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ICE3A2065 ICE3A2065 Infineon Technologies INFNS22601-1.pdf?t.download=true&u=5oefqw Description: ICE3A2065 - FIXED FREQUENCY COOL
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 57 W
Produkt ist nicht verfügbar
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IRL530NSTRRPBF IRL530NSTRRPBF Infineon Technologies irl530nspbf.pdf?fileId=5546d462533600a40153565fb64c2562 Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
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IRL530NSTRRPBF IRL530NSTRRPBF Infineon Technologies irl530nspbf.pdf?fileId=5546d462533600a40153565fb64c2562 Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
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IPDD60R125CFD7XTMA1 IPDD60R125CFD7XTMA1 Infineon Technologies Infineon-IPDD60R125CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2ebfc642ba Description: MOSFET N-CH 600V 27A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R125CFD7XTMA1 IPDD60R125CFD7XTMA1 Infineon Technologies Infineon-IPDD60R125CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2ebfc642ba Description: MOSFET N-CH 600V 27A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
auf Bestellung 1688 Stücke:
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4+5.56 EUR
10+4.1 EUR
100+3.09 EUR
500+2.74 EUR
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BSS126IXTSA1 BSS126IXTSA1 Infineon Technologies Infineon-BSS126I-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a017376e5a5f370d1 Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
auf Bestellung 3000 Stücke:
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3000+0.1 EUR
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BSS126IXTSA1 BSS126IXTSA1 Infineon Technologies Infineon-BSS126I-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a017376e5a5f370d1 Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
auf Bestellung 3589 Stücke:
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57+0.31 EUR
100+0.2 EUR
500+0.15 EUR
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BSS126 H6906 Infineon Technologies INFNS19225-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
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TDA4916GG TDA4916GG Infineon Technologies INFNS20511-1.pdf?t.download=true&u=ovmfp3 Description: SWITCHING CONTROLLER
Packaging: Bulk
Part Status: Active
auf Bestellung 667 Stücke:
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405+1.12 EUR
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BTS5210G BTS5210G Infineon Technologies INFNS13127-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER BASED PERIPHERAL
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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PX8897EDQGR2ER1232AXUMA1 Infineon Technologies Description: IC REGULATOR PG-VQFN-48-2
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PX8897EDQGR2ER1233AXUMA1 Infineon Technologies Description: IC REGULATOR PG-VQFN-48-2
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ADM6992X-AD-T-1 ADM6992X-AD-T-1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC ETHERNET CONVERTER 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 3.135V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-FX/T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Obsolete
DigiKey Programmable: Not Verified
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ADM6992KX-AB-T-1-INF ADM6992KX-AB-T-1-INF Infineon Technologies cPD_117_08.pdf Description: NINJA: FIBER TO FAST ETHERNET CO
Packaging: Tray
Part Status: Active
DigiKey Programmable: Not Verified
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IRFS7534TRLPBF IRFS7534TRLPBF Infineon Technologies irfs7534pbf.pdf?fileId=5546d462533600a4015364c3e2c629c7 Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
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IRFS7534TRLPBF IRFS7534TRLPBF Infineon Technologies irfs7534pbf.pdf?fileId=5546d462533600a4015364c3e2c629c7 Description: MOSFET N CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
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IRFS7534TRL7PP IRFS7534TRL7PP Infineon Technologies irfs7534-7ppbf.pdf?fileId=5546d462533600a40153563aa65221da Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Produkt ist nicht verfügbar
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IRFS7534TRL7PP IRFS7534TRL7PP Infineon Technologies irfs7534-7ppbf.pdf?fileId=5546d462533600a40153563aa65221da Description: MOSFET N CH 60V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Produkt ist nicht verfügbar
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SAF-XC836M-1FRIAB SAF-XC836M-1FRIAB Infineon Technologies INFNS16643-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
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SAK-XC836MT-2FRAAB Infineon Technologies INFNS16643-1.pdf?t.download=true&u=5oefqw Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I²C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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6ED003L06FXUMA1 6ED003L06FXUMA1 Infineon Technologies INFNS19532-1.pdf?t.download=true&u=5oefqw Description: 6ED003L06 - HALF-BRIDGE BASED MO
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
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6ED003L06-FXUMA1 Infineon Technologies Description: 6ED003L06 - HALF-BRIDGE BASED MO
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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111-4204PBF Infineon Technologies Description: IC REGULATOR SMD
Produkt ist nicht verfügbar
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SIDC73D170E6X1SA2 Infineon Technologies SIDC73D170E6_L4381N.pdf?folderId=db3a304412b407950112b439a93a6e73&fileId=db3a304412b407950112b439a9c76e74 Description: DIODE GEN PURP 1.7KV 100A WAFER
Produkt ist nicht verfügbar
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BBY 56-02W E6127 BBY 56-02W E6127 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE TUNING 10V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: SCD-80
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
Produkt ist nicht verfügbar
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TLE7183QUXUMB1 TLE7183QUXUMB1 Infineon Technologies Infineon-TLE7183QU-DS-v01_01-EN.pdf?fileId=db3a304334bc9e690134c2a52cac30cd Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Produkt ist nicht verfügbar
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TLE7183QUXUMA8 TLE7183QUXUMA8 Infineon Technologies Infineon-TLE7183QU-DS-v01_01-EN.pdf?fileId=db3a304334bc9e690134c2a52cac30cd Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Produkt ist nicht verfügbar
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TLE7183QUXUMA6 TLE7183QUXUMA6 Infineon Technologies Infineon-TLE7183QU-DS-v01_01-EN.pdf?fileId=db3a304334bc9e690134c2a52cac30cd Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Produkt ist nicht verfügbar
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TLE7183QUXUMA9 TLE7183QUXUMA9 Infineon Technologies Infineon-TLE7183QU-DS-v01_01-EN.pdf?fileId=db3a304334bc9e690134c2a52cac30cd Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Produkt ist nicht verfügbar
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TLE7183QUXUMA7 TLE7183QUXUMA7 Infineon Technologies Infineon-TLE7183QU-DS-v01_01-EN.pdf?fileId=db3a304334bc9e690134c2a52cac30cd Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Produkt ist nicht verfügbar
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FF6MR12W2M1PB11BPSA1 FF6MR12W2M1PB11BPSA1 Infineon Technologies Infineon-FF6MR12W2M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171541e75135f0b Description: MOSFET 2N-CH 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Part Status: Obsolete
Produkt ist nicht verfügbar
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DF80R12W2H3B11BOMA1 Infineon Technologies INFNS28251-1.pdf?t.download=true&u=5oefqw Description: IGBT MODULE 1200V 50A 190W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 190 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V
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7+65.29 EUR
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FS100R12KT4GPB11BPSA1 Infineon Technologies Description: MOD IGBT LOW PWR ECONO3-4
Packaging: Bulk
auf Bestellung 38 Stücke:
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2+247.57 EUR
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DDB6U134N16RRB11BPSA1 DDB6U134N16RRB11BPSA1 Infineon Technologies PressFIT_Portfolio_PB_05-2016.pdf Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
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FF225R12ME4B11BPSA1 Infineon Technologies INFNS28365-1.pdf?t.download=true&u=5oefqw Description: FF225R12 - IGBT MODULE
auf Bestellung 177 Stücke:
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F4100R17ME4B11BPSA1 Infineon Technologies Infineon-F4-100R17ME4_B11-DS-v03_02-EN.pdf?fileId=5546d462576f34750157ae37f25a7de9 Description: IGBT MODULE 1700V 155A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
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FF225R17ME4PB11BPSA1 FF225R17ME4PB11BPSA1 Infineon Technologies Infineon-FF225R17ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b10283a015b1ef28594015c Description: IGBT MOD 1700V 450A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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FP75R12KT4PB11BPSA1 FP75R12KT4PB11BPSA1 Infineon Technologies Infineon-FP75R12KT4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b60924221652e Description: IGBT MODULE 1200V 150A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
auf Bestellung 39 Stücke:
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3+164.18 EUR
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F4250R17MP4B11BPSA1 F4250R17MP4B11BPSA1 Infineon Technologies Infineon-F4-250R17MP4_B11-DS-v03_02-EN.pdf?fileId=5546d462576f34750157ae38a1647df7 Description: IGBT MODULE 1700V 370A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 250A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
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2+274.44 EUR
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TC364DP64F300WAAKXUMA1 TC364DP64F300WAAKXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LQFP-144-22
Part Status: Active
DigiKey Programmable: Not Verified
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TC364DP64F300WAAKXUMA1 TC364DP64F300WAAKXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LQFP-144-22
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMBG120R140M1HXTMA1 IMBG120R140M1HXTMA1 Infineon Technologies Infineon-IMBG120R140M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecf171326c Description: SICFET N-CH 1.2KV 18A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 189mOhm @ 6A, 18V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 800 V
Produkt ist nicht verfügbar
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IMBG120R220M1HXTMA1 IMBG120R220M1HXTMA1 Infineon Technologies Infineon-IMBG120R220M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecffdf326f Description: SICFET N-CH 1.2KV 13A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V
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1000+4.1 EUR
Mindestbestellmenge: 1000
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CY7C1513KV18-250BZXI CY7C1513KV18-250BZXI Infineon Technologies Infineon-CY7C1526KV18_CY7C1513KV18_CY7C1515KV18_72-Mbit_QDR(R)_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe15e1314b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IKFW40N65ES5XKSA1 IKFW40N65ES5XKSA1 Infineon Technologies Infineon-IKFW40N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174daaa2bc525ee Description: IGBT TRENCH FS 650V 60A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
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2+10.72 EUR
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IMM101T046MXUMA1 IMM101T046MXUMA1 Infineon Technologies Infineon-IMM100T-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b7012c7993b83 Description: IMOTION
Packaging: Cut Tape (CT)
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Produkt ist nicht verfügbar
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FS150R12KE3GBOSA1 FS150R12KE3GBOSA1 Infineon Technologies Infineon-FS150R12KE3G-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b4311e48538c Description: IGBT MOD 1200V 200A 695W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
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1+530.24 EUR
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IPP60R090CFD7 Infineon Technologies Infineon-IPP60R090CFD7-DS-v02_00-EN.pdf?fileId=5546d46261ff57770162002fc9be2bb8 Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPD380P06NMATMA1 IPD380P06NMATMA1 Infineon Technologies Infineon-IPD380P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2ea8300b7 Description: MOSFET P-CH 60V 35A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
auf Bestellung 15578 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.64 EUR
10+2.35 EUR
100+1.6 EUR
500+1.28 EUR
1000+1.26 EUR
Mindestbestellmenge: 5
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DEMOBOARDIFX81481TOBO1 DEMOBOARDIFX81481TOBO1 Infineon Technologies Infineon-Demoboard_Description_IFX81481-UM-v01_00-EN.pdf?fileId=5546d4624bbf60fb014bc64316232d5e Description: DEMOBOARD IFX81481
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
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EVAL2EDL23N06PJTOBO1 EVAL2EDL23N06PJTOBO1 Infineon Technologies Infineon-2EDL23N06PJ_EVAL-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46145f1f3a401461dcabb831bd1 Description: EVAL BOARD FOR 2EDL23N06PJ
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDL23N06PJ
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+139.16 EUR
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BAS40-06E6327 BAS40-06E6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
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BSO613SPVGXUMA1 BSO613SPVGXUMA1 Infineon Technologies Infineon-BSO613SPVG-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42ae038440c Description: MOSFET P-CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-DSO-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.56 EUR
Mindestbestellmenge: 2500
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TLE4928HALA1
TLE4928HALA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH SPEC PURP SSO-3
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.25 EUR
5+10.8 EUR
10+9.54 EUR
25+7.74 EUR
50+6.84 EUR
100+6.66 EUR
500+6.26 EUR
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TLE4922XANFHALA1 TLE4922XANFHALA1.pdf
TLE4922XANFHALA1
Hersteller: Infineon Technologies
Description: SEN HALL EFT ANLG VOLT PG-SSO-4
Packaging: Tape & Box (TB)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.35 EUR
Mindestbestellmenge: 2000
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TLE4922XANFHALA1 TLE4922XANFHALA1.pdf
TLE4922XANFHALA1
Hersteller: Infineon Technologies
Description: SEN HALL EFT ANLG VOLT PG-SSO-4
Packaging: Cut Tape (CT)
Package / Case: 4-SIP, SSO-4-1
Output Type: Analog Voltage
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 155°C
Voltage - Supply: 4.5V ~ 18V
Bandwidth: 8kHz
Technology: Hall Effect
Sensing Range: ±400mT
Current - Output (Max): 8mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-SSO-4-1
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2618 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
10+1.86 EUR
25+1.74 EUR
50+1.67 EUR
100+1.6 EUR
500+1.45 EUR
1000+1.4 EUR
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TLE4926CHTE6547HAMA1 Solutions_for_Wind_Energy_Systems.pdf
Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT SSO-3
Produkt ist nicht verfügbar
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IPB80R290C3AATMA2 Infineon-IPB80R290C3A-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663e7c05663210
IPB80R290C3AATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.64 EUR
Mindestbestellmenge: 1000
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IPB80R290C3AATMA2 Infineon-IPB80R290C3A-DS-v02_00-EN.pdf?fileId=5546d46265f064ff01663e7c05663210
IPB80R290C3AATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2144 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.24 EUR
10+6.2 EUR
100+4.47 EUR
500+4.45 EUR
Mindestbestellmenge: 2
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ICE3AR10080JZ INFNS17390-1.pdf?t.download=true&u=5oefqw
ICE3AR10080JZ
Hersteller: Infineon Technologies
Description: ICE3AR10080 - FIXED FREQUENCY CO
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -20°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DIP-7-1
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage, UVLO
Voltage - Start Up: 17 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 22 W
auf Bestellung 6167 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
192+2.54 EUR
Mindestbestellmenge: 192
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ICE3A2065 INFNS22601-1.pdf?t.download=true&u=5oefqw
ICE3A2065
Hersteller: Infineon Technologies
Description: ICE3A2065 - FIXED FREQUENCY COOL
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Active
Power (Watts): 57 W
Produkt ist nicht verfügbar
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IRL530NSTRRPBF irl530nspbf.pdf?fileId=5546d462533600a40153565fb64c2562
IRL530NSTRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
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IRL530NSTRRPBF irl530nspbf.pdf?fileId=5546d462533600a40153565fb64c2562
IRL530NSTRRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Produkt ist nicht verfügbar
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IPDD60R125CFD7XTMA1 Infineon-IPDD60R125CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2ebfc642ba
IPDD60R125CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 27A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
Produkt ist nicht verfügbar
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IPDD60R125CFD7XTMA1 Infineon-IPDD60R125CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4627506bb3201751c2ebfc642ba
IPDD60R125CFD7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 27A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
auf Bestellung 1688 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.56 EUR
10+4.1 EUR
100+3.09 EUR
500+2.74 EUR
Mindestbestellmenge: 4
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BSS126IXTSA1 Infineon-BSS126I-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a017376e5a5f370d1
BSS126IXTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
Mindestbestellmenge: 3000
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BSS126IXTSA1 Infineon-BSS126I-DataSheet-v02_00-EN.pdf?fileId=5546d46272e49d2a017376e5a5f370d1
BSS126IXTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
auf Bestellung 3589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
57+0.31 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
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BSS126 H6906 INFNS19225-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Produkt ist nicht verfügbar
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TDA4916GG INFNS20511-1.pdf?t.download=true&u=ovmfp3
TDA4916GG
Hersteller: Infineon Technologies
Description: SWITCHING CONTROLLER
Packaging: Bulk
Part Status: Active
auf Bestellung 667 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
405+1.12 EUR
Mindestbestellmenge: 405
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BTS5210G INFNS13127-1.pdf?t.download=true&u=5oefqw
BTS5210G
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER BASED PERIPHERAL
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Produkt ist nicht verfügbar
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PX8897EDQGR2ER1232AXUMA1
Hersteller: Infineon Technologies
Description: IC REGULATOR PG-VQFN-48-2
Produkt ist nicht verfügbar
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PX8897EDQGR2ER1233AXUMA1
Hersteller: Infineon Technologies
Description: IC REGULATOR PG-VQFN-48-2
Produkt ist nicht verfügbar
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ADM6992X-AD-T-1 fundamentals-of-power-semiconductors
ADM6992X-AD-T-1
Hersteller: Infineon Technologies
Description: IC ETHERNET CONVERTER 128QFP
Packaging: Tray
Package / Case: 128-BFQFP
Function: Switch
Operating Temperature: 0°C ~ 115°C
Voltage - Supply: 3.135V ~ 3.465V
Protocol: Ethernet
Standards: 10/100 Base-FX/T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Obsolete
DigiKey Programmable: Not Verified
auf Bestellung 384 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
51+8.88 EUR
Mindestbestellmenge: 51
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ADM6992KX-AB-T-1-INF cPD_117_08.pdf
ADM6992KX-AB-T-1-INF
Hersteller: Infineon Technologies
Description: NINJA: FIBER TO FAST ETHERNET CO
Packaging: Tray
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
55+8.69 EUR
Mindestbestellmenge: 55
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IRFS7534TRLPBF irfs7534pbf.pdf?fileId=5546d462533600a4015364c3e2c629c7
IRFS7534TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.35 EUR
1600+2.32 EUR
Mindestbestellmenge: 800
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IRFS7534TRLPBF irfs7534pbf.pdf?fileId=5546d462533600a4015364c3e2c629c7
IRFS7534TRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 294W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
auf Bestellung 2061 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.62 EUR
10+4.35 EUR
100+3.06 EUR
Mindestbestellmenge: 3
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IRFS7534TRL7PP irfs7534-7ppbf.pdf?fileId=5546d462533600a40153563aa65221da
IRFS7534TRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Produkt ist nicht verfügbar
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IRFS7534TRL7PP irfs7534-7ppbf.pdf?fileId=5546d462533600a40153563aa65221da
IRFS7534TRL7PP
Hersteller: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Produkt ist nicht verfügbar
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SAF-XC836M-1FRIAB INFNS16643-1.pdf?t.download=true&u=5oefqw
SAF-XC836M-1FRIAB
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
189+2.56 EUR
Mindestbestellmenge: 189
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SAK-XC836MT-2FRAAB INFNS16643-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I²C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-28-1
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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6ED003L06FXUMA1 INFNS19532-1.pdf?t.download=true&u=5oefqw
6ED003L06FXUMA1
Hersteller: Infineon Technologies
Description: 6ED003L06 - HALF-BRIDGE BASED MO
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 17812 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
173+2.92 EUR
Mindestbestellmenge: 173
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6ED003L06-FXUMA1
Hersteller: Infineon Technologies
Description: 6ED003L06 - HALF-BRIDGE BASED MO
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-TSSOP-28
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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111-4204PBF
Hersteller: Infineon Technologies
Description: IC REGULATOR SMD
Produkt ist nicht verfügbar
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SIDC73D170E6X1SA2 SIDC73D170E6_L4381N.pdf?folderId=db3a304412b407950112b439a93a6e73&fileId=db3a304412b407950112b439a9c76e74
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.7KV 100A WAFER
Produkt ist nicht verfügbar
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BBY 56-02W E6127 fundamentals-of-power-semiconductors
BBY 56-02W E6127
Hersteller: Infineon Technologies
Description: DIODE TUNING 10V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: SCD-80
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
Produkt ist nicht verfügbar
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TLE7183QUXUMB1 Infineon-TLE7183QU-DS-v01_01-EN.pdf?fileId=db3a304334bc9e690134c2a52cac30cd
TLE7183QUXUMB1
Hersteller: Infineon Technologies
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Produkt ist nicht verfügbar
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TLE7183QUXUMA8 Infineon-TLE7183QU-DS-v01_01-EN.pdf?fileId=db3a304334bc9e690134c2a52cac30cd
TLE7183QUXUMA8
Hersteller: Infineon Technologies
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Produkt ist nicht verfügbar
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TLE7183QUXUMA6 Infineon-TLE7183QU-DS-v01_01-EN.pdf?fileId=db3a304334bc9e690134c2a52cac30cd
TLE7183QUXUMA6
Hersteller: Infineon Technologies
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Produkt ist nicht verfügbar
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TLE7183QUXUMA9 Infineon-TLE7183QU-DS-v01_01-EN.pdf?fileId=db3a304334bc9e690134c2a52cac30cd
TLE7183QUXUMA9
Hersteller: Infineon Technologies
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Produkt ist nicht verfügbar
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TLE7183QUXUMA7 Infineon-TLE7183QU-DS-v01_01-EN.pdf?fileId=db3a304334bc9e690134c2a52cac30cd
TLE7183QUXUMA7
Hersteller: Infineon Technologies
Description: DRIVER_IC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 5.5V ~ 20V
Technology: Power MOSFET
Supplier Device Package: PG-TQFP-48-8
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Produkt ist nicht verfügbar
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FF6MR12W2M1PB11BPSA1 Infineon-FF6MR12W2M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b70171541e75135f0b
FF6MR12W2M1PB11BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 1200V 200A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Part Status: Obsolete
Produkt ist nicht verfügbar
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DF80R12W2H3B11BOMA1 INFNS28251-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 50A 190W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual Boost Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 190 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V
auf Bestellung 285 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+65.29 EUR
Mindestbestellmenge: 7
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FS100R12KT4GPB11BPSA1
Hersteller: Infineon Technologies
Description: MOD IGBT LOW PWR ECONO3-4
Packaging: Bulk
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+247.57 EUR
Mindestbestellmenge: 2
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DDB6U134N16RRB11BPSA1 PressFIT_Portfolio_PB_05-2016.pdf
DDB6U134N16RRB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+106.68 EUR
Mindestbestellmenge: 5
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FF225R12ME4B11BPSA1 INFNS28365-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: FF225R12 - IGBT MODULE
auf Bestellung 177 Stücke:
Lieferzeit 10-14 Tag (e)
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F4100R17ME4B11BPSA1 Infineon-F4-100R17ME4_B11-DS-v03_02-EN.pdf?fileId=5546d462576f34750157ae37f25a7de9
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 155A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
auf Bestellung 68 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+156 EUR
Mindestbestellmenge: 3
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FF225R17ME4PB11BPSA1 Infineon-FF225R17ME4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b10283a015b1ef28594015c
FF225R17ME4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1700V 450A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
auf Bestellung 618 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+183.55 EUR
Mindestbestellmenge: 3
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FP75R12KT4PB11BPSA1 Infineon-FP75R12KT4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b60924221652e
FP75R12KT4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 150A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+164.18 EUR
Mindestbestellmenge: 3
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F4250R17MP4B11BPSA1 Infineon-F4-250R17MP4_B11-DS-v03_02-EN.pdf?fileId=5546d462576f34750157ae38a1647df7
F4250R17MP4B11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 370A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 250A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
auf Bestellung 462 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+274.44 EUR
Mindestbestellmenge: 2
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TC364DP64F300WAAKXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC364DP64F300WAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LQFP-144-22
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC364DP64F300WAAKXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC364DP64F300WAAKXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 672K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-LQFP-144-22
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IMBG120R140M1HXTMA1 Infineon-IMBG120R140M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecf171326c
IMBG120R140M1HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 18A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 189mOhm @ 6A, 18V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 800 V
Produkt ist nicht verfügbar
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IMBG120R220M1HXTMA1 Infineon-IMBG120R220M1H-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b0ecffdf326f
IMBG120R220M1HXTMA1
Hersteller: Infineon Technologies
Description: SICFET N-CH 1.2KV 13A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+4.1 EUR
Mindestbestellmenge: 1000
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CY7C1513KV18-250BZXI Infineon-CY7C1526KV18_CY7C1513KV18_CY7C1515KV18_72-Mbit_QDR(R)_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe15e1314b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1513KV18-250BZXI
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IKFW40N65ES5XKSA1 Infineon-IKFW40N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174daaa2bc525ee
IKFW40N65ES5XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 60A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.72 EUR
Mindestbestellmenge: 2
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IMM101T046MXUMA1 Infineon-IMM100T-DataSheet-v01_00-EN.pdf?fileId=5546d4626b2d8e69016b7012c7993b83
IMM101T046MXUMA1
Hersteller: Infineon Technologies
Description: IMOTION
Packaging: Cut Tape (CT)
Package / Case: 38-PowerVQFN
Mounting Type: Surface Mount
Function: Driver
Current - Output: 4A
Interface: PWM
Operating Temperature: -40°C ~ 115°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Applications: General Purpose
Technology: Power MOSFET
Supplier Device Package: PG-IQFN-38-1
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushless DC (BLDC)
Part Status: Active
Produkt ist nicht verfügbar
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FS150R12KE3GBOSA1 Infineon-FS150R12KE3G-DS-v03_01-en_de.pdf?fileId=db3a304412b407950112b4311e48538c
FS150R12KE3GBOSA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 200A 695W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 695 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
auf Bestellung 8 Stücke:
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Anzahl Preis
1+530.24 EUR
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IPP60R090CFD7 Infineon-IPP60R090CFD7-DS-v02_00-EN.pdf?fileId=5546d46261ff57770162002fc9be2bb8
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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IPD380P06NMATMA1 Infineon-IPD380P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2ea8300b7
IPD380P06NMATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 35A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
auf Bestellung 15578 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.64 EUR
10+2.35 EUR
100+1.6 EUR
500+1.28 EUR
1000+1.26 EUR
Mindestbestellmenge: 5
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DEMOBOARDIFX81481TOBO1 Infineon-Demoboard_Description_IFX81481-UM-v01_00-EN.pdf?fileId=5546d4624bbf60fb014bc64316232d5e
DEMOBOARDIFX81481TOBO1
Hersteller: Infineon Technologies
Description: DEMOBOARD IFX81481
auf Bestellung 4 Stücke:
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EVAL2EDL23N06PJTOBO1 Infineon-2EDL23N06PJ_EVAL-ApplicationNotes-v01_00-EN.pdf?fileId=5546d46145f1f3a401461dcabb831bd1
EVAL2EDL23N06PJTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR 2EDL23N06PJ
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EDL23N06PJ
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+139.16 EUR
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BAS40-06E6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS40-06E6327
Hersteller: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Produkt ist nicht verfügbar
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BSO613SPVGXUMA1 Infineon-BSO613SPVG-DS-v01_04-en.pdf?fileId=db3a304412b407950112b42ae038440c
BSO613SPVGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-DSO-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.56 EUR
Mindestbestellmenge: 2500
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