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BSC079N10NSGATMA1 BSC079N10NSGATMA1 Infineon Technologies BSC079N10NS+Rev1.03.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043163797a601167b174f951147 Description: MOSFET N-CH 100V 13.4A 8TDSON
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
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500+1.89 EUR
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TLE5027CXAAD47AIHAMA1 TLE5027CXAAD47AIHAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Part Status: Obsolete
Supplier Device Package: PG-SSO-3-92
Technology: Magnetoresistive
Operating Temperature: -40°C ~ 175°C (TJ)
Qualification: AEC-Q100
Grade: Automotive
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 3-SSIP Module
Packaging: Bulk
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TLE5027CXAAD47AGXAMA1 TLE5027CXAAD47AGXAMA1 Infineon Technologies Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Output Type: PWM
Package / Case: 3-SSIP Module
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: PG-SSO-3-92
Technology: Magnetoresistive
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Qualification: AEC-Q100
Grade: Automotive
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TLE5009A16E1200XUMA1 TLE5009A16E1200XUMA1 Infineon Technologies infineon-tle5x09a16-d-datasheet-en.pdf Description: IC HALL SENSOR LINEAR TDSO-16
Technology: Magnetoresistive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 3V ~ 3.6V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Bulk
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
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TLE5009A16E2200XUMA1 Infineon Technologies Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9 Description: IC HALL SENSOR LINEAR TDSO-16
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
Technology: Magnetoresistive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Bulk
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TLE5025CE6747HAMA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: MAG SWITCH SPEED SENSOR 3SSO
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TLE5027CIE6747HAMA1 TLE5027CIE6747HAMA1 Infineon Technologies TLE5027C_PB_7-2-13.pdf Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Part Status: Obsolete
Supplier Device Package: PG-SSO-3-92
Technology: Magnetoresistive
Qualification: AEC-Q100
Grade: Automotive
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 3-SSIP Module
Packaging: Bulk
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TLE5009A16E2210XUMA1 TLE5009A16E2210XUMA1 Infineon Technologies infineon-tle5x09a16-d-datasheet-en.pdf Description: IC HALL SENSOR LINEAR TDSO-16
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
Technology: Magnetoresistive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Bulk
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BTS736L2NTMA1 Infineon Technologies INFNS05478-1.pdf?t.download=true&u=5oefqw Description: BUFFER/INVERTER BASED PERIPHERAL
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TLE4274GV50ATMA1 TLE4274GV50ATMA1 Infineon Technologies INFNS16630-1.pdf?t.download=true&u=5oefqw Description: IC REG LINEAR FIXED LDO REG
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO263-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Packaging: Bulk
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 60dB (100Hz)
Produkt ist nicht verfügbar
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TLE4274GV50ATMA2 TLE4274GV50ATMA2 Infineon Technologies Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1 Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
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CY7C4235V-15ASXC CY7C4235V-15ASXC Infineon Technologies CY7C4205V%2C15V%2C25V%2C35V%2C45V%2C4425V.pdf Description: IC FIFO SYNC 2KX18 11NS 64TQFP
Current - Supply (Max): 30mA
Access Time: 11ns
Data Rate: 66.7MHz
Operating Temperature: 0°C ~ 70°C
Memory Size: 36K (2K x 18)
Function: Synchronous
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Voltage - Supply: 3 V ~ 3.6 V
Part Status: Obsolete
FWFT Support: No
Retransmit Capability: Yes
Programmable Flags Support: Yes
Expansion Type: Depth, Width
Bus Directional: Uni-Directional
Supplier Device Package: 64-TQFP (14x14)
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IPD14N06S2-80 Infineon Technologies INFNS09524-1.pdf?t.download=true&u=5oefqw Description: IPD14N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
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CY7C1041CV33-10BAJXE CY7C1041CV33-10BAJXE Infineon Technologies Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecab2cc43b0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY7C1041CV33-10BAJXET CY7C1041CV33-10BAJXET Infineon Technologies Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecab2cc43b0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Cut Tape (CT)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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IPA60R125P6 IPA60R125P6 Infineon Technologies Infineon-IPX60R125P6-DS-v02_00-en[1].pdf?fileId=5546d461464245d301468af2915b667f Description: POWER FIELD-EFFECT TRANSISTOR
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Produkt ist nicht verfügbar
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IPB60R600CP IPB60R600CP Infineon Technologies INFNS11341-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 220µA
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IPB60R520CP IPB60R520CP Infineon Technologies INFNS11337-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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IPB60R250CPATMA1 IPB60R250CPATMA1 Infineon Technologies IPB60R250CP_rev2.1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320896aa201208b2fd3ce0087 Description: MOSFET N-CH 600V 12A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
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IPB60R250CP IPB60R250CP Infineon Technologies INFNS17419-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
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BG3130RH6327XTSA1 BG3130RH6327XTSA1 Infineon Technologies BG3130.pdf Description: RF MOSFET 5V SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
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BTS240AHKSA1 Infineon Technologies INFNS15457-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO218-3-1
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 170W
Rds On (Max) @ Id, Vgs: 18mOhm @ 47A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
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IPP120N06S4H1AKSA2 IPP120N06S4H1AKSA2 Infineon Technologies IPx120N06S4-H1.pdf Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPI120N06S402AKSA2 IPI120N06S402AKSA2 Infineon Technologies IPx120N06S4-02.pdf Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB120N06S4H1ATMA2 IPB120N06S4H1ATMA2 Infineon Technologies Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IAUC120N06S5N017ATMA1 IAUC120N06S5N017ATMA1 Infineon Technologies Infineon-IAUC120N06S5N017-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f48ce58a61bc Description: MOSFET N-CH 60V 120A TDSON-8-43
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
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5000+1.43 EUR
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IAUC120N06S5N017ATMA1 IAUC120N06S5N017ATMA1 Infineon Technologies Infineon-IAUC120N06S5N017-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f48ce58a61bc Description: MOSFET N-CH 60V 120A TDSON-8-43
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
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10+3 EUR
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EVALIMOTION2GOTOBO1 EVALIMOTION2GOTOBO1 Infineon Technologies Infineon-EVAL-iMOTION2GO-UserManual-v01_01-EN.pdf?fileId=5546d462719b59230171abbcc2b4481b Description: EVAL BOARD FOR IMC101T
Contents: Board(s)
Part Status: Active
Utilized IC / Part: IMC101T
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Primary Attributes: Motors (BLDC)
Supplied Contents: Board(s)
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IRFH7440TRPBFTR Infineon Technologies irfh7440pbf.pdf?fileId=5546d462533600a40153561f0e821eed Description: IRFH7440 - 12V-300V N-CHANNEL PO
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SAB-C161PI-LM3V SAB-C161PI-LM3V Infineon Technologies INFNS00746-1.pdf?t.download=true&u=5oefqw Description: SAB-C161PI-LF 3V CA - LEGACY 16-
Number of I/O: 76
Part Status: Active
Supplier Device Package: P-MQFP-100-2
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, I²C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Data Converters: A/D 4x10b
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 3K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
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SAB-C161O-L25M SAB-C161O-L25M Infineon Technologies INFNS01615-1.pdf?t.download=true&u=5oefqw Description: SAB-C161O-L25M HA - LEGACY 16-BI
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Active
Supplier Device Package: P-MQFP-80-1
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
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SPD03N60S5XT Infineon Technologies Infineon-SPD_U03N60S5-DS-v02_05-en1.pdf?t.download=true&u=5oefqw Description: SPD03N60 - 600V COOLMOS N-CHANNE
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Vgs(th) (Max) @ Id: 5.5V @ 135µA
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PSB21653EV1.4-G Infineon Technologies Description: INCA -IP2 SINGLE-CHIP IP PHONE W
Packaging: Bulk
Part Status: Active
auf Bestellung 429 Stücke:
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IRFR9N20DTR IRFR9N20DTR Infineon Technologies irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b Description: MOSFET N-CH 200V 9.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFR9N20DTRL IRFR9N20DTRL Infineon Technologies irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b Description: MOSFET N-CH 200V 9.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFR9N20DTRR IRFR9N20DTRR Infineon Technologies irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b Description: MOSFET N-CH 200V 9.4A DPAK
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 86W (Tc)
Produkt ist nicht verfügbar
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IRFR9N20DPBF IRFR9N20DPBF Infineon Technologies irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b description Description: MOSFET N-CH 200V 9.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
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IRFR9N20DTRLPBF IRFR9N20DTRLPBF Infineon Technologies irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b Description: MOSFET N-CH 200V 9.4A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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TC333LP32F200FAALXUMA1 TC333LP32F200FAALXUMA1 Infineon Technologies Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7 Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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2EDS8265HXUMA2 2EDS8265HXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
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10+4.1 EUR
25+3.76 EUR
100+3.39 EUR
250+3.22 EUR
500+3.18 EUR
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IPL60R065C7AUMA1 IPL60R065C7AUMA1 Infineon Technologies Infineon-IPL60R065C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b090ab7b75cd Description: MOSFET HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
auf Bestellung 4538 Stücke:
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2+11.11 EUR
10+7.52 EUR
100+5.69 EUR
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IRF6811STR1PBF Infineon Technologies irf6811spbf.pdf?fileId=5546d462533600a4015355f0b3661ab6 Description: MOSFET N CH 25V 19A DIRECTFET
Produkt ist nicht verfügbar
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IGD15N65T6ARMA1 IGD15N65T6ARMA1 Infineon Technologies Infineon-IGD15N65T6-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766c35b2760de1 Description: IGBT TRENCH FS 650V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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IGD15N65T6ARMA1 IGD15N65T6ARMA1 Infineon Technologies Infineon-IGD15N65T6-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766c35b2760de1 Description: IGBT TRENCH FS 650V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 100 W
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AIGB15N65H5ATMA1 AIGB15N65H5ATMA1 Infineon Technologies Infineon-AIGB15N65H5-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b6669e363172 Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/22ns
Switching Energy: 160µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Grade: Automotive
Qualification: AEC-Q101
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AIKB15N65DH5ATMA1 AIKB15N65DH5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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AIKB15N65DF5ATMA1 AIKB15N65DF5ATMA1 Infineon Technologies Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4 Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
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PEF2260NV3.0SICOFI Infineon Technologies Description: SICOFI CODEC FILTER
auf Bestellung 90 Stücke:
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20+27.53 EUR
Mindestbestellmenge: 20 Stücke
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2EDF7175FXUMA2 2EDF7175FXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG DSO16
Gate Type: MOSFET (N-Channel, P-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Supplier Device Package: PG-DSO-16-11
Input Type: Non-Inverting
Voltage - Supply: 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1A, 2A
Logic Voltage - VIL, VIH: -, 1.65V
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5+3.75 EUR
10+2.79 EUR
25+2.55 EUR
100+2.29 EUR
250+2.16 EUR
500+2.08 EUR
1000+2.02 EUR
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2EDS8165HXUMA2 2EDS8165HXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1A, 2A
Logic Voltage - VIL, VIH: -, 1.65V
Gate Type: MOSFET (N-Channel, P-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Supplier Device Package: PG-DSO-16-30
Input Type: Non-Inverting
Voltage - Supply: 20V
Operating Temperature: -40°C ~ 125°C (TA)
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10+2.54 EUR
25+2.31 EUR
100+2.07 EUR
250+1.95 EUR
500+1.88 EUR
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2EDF7275FXUMA2 2EDF7275FXUMA2 Infineon Technologies Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057 Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1500 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
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100+2.32 EUR
250+2.19 EUR
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SPB10N10 G SPB10N10 G Infineon Technologies SPB10N10.pdf Description: MOSFET N-CH 100V 10.3A TO263-3
Produkt ist nicht verfügbar
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BFR182E6327 BFR182E6327 Infineon Technologies INFNS10845-1.pdf?t.download=true&u=5oefqw Description: BFR182 - LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
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3480+0.16 EUR
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IRFR7746PBF-INF IRFR7746PBF-INF Infineon Technologies IRSD-S-A0000176414-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 75V 56A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
Produkt ist nicht verfügbar
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BSC120N03LSG BSC120N03LSG Infineon Technologies INFNS27238-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
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IPB120N03S4L03ATMA1 IPB120N03S4L03ATMA1 Infineon Technologies Infineon-IPB120N03S4L-03-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a3606cf60466 Description: MOSFET N-CH 30V 120A D2PAK
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
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BSC074N15NS5ATMA1 BSC074N15NS5ATMA1 Infineon Technologies Infineon-BSC074N15NS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f8032bc9a7092 Description: MOSFET N-CH 150V 114A TSON-8-3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 136µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
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PTAB182002TCV2XWSA1 Infineon Technologies Description: IC RF FET LDMOS 190W H-49248H-4
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REFENGCOOLFAN1KWTOBO1 REFENGCOOLFAN1KWTOBO1 Infineon Technologies Infineon-1kW_Engine_Cooling_Fan_Reference_Design_Fact_Sheet-ProductBrief-v01_00-EN.pdf?fileId=5546d46272e49d2a0172ffa9a403738e Description: DEV KIT
Packaging: Bulk
Function: Power Supply
Type: Power Management
Contents: Board(s)
Supplied Contents: Board(s)
Part Status: Active
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S2GO3DTLI493DW2BWA0TOBO1 S2GO3DTLI493DW2BWA0TOBO1 Infineon Technologies Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d Description: DEV KIT
Packaging: Bulk
Interface: I2C
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Hall Effect
Utilized IC / Part: TLI493D
Supplied Contents: Board(s)
Embedded: Yes
Sensing Range: ±160mT
Part Status: Active
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BSC079N10NSGATMA1 BSC079N10NS+Rev1.03.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a3043163797a601167b174f951147
BSC079N10NSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 13.4A 8TDSON
Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8-1
Vgs(th) (Max) @ Id: 4V @ 110µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
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4+4.56 EUR
10+3.13 EUR
100+2.27 EUR
500+1.89 EUR
1000+1.85 EUR
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TLE5027CXAAD47AIHAMA1 fundamentals-of-power-semiconductors
TLE5027CXAAD47AIHAMA1
Hersteller: Infineon Technologies
Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Part Status: Obsolete
Supplier Device Package: PG-SSO-3-92
Technology: Magnetoresistive
Operating Temperature: -40°C ~ 175°C (TJ)
Qualification: AEC-Q100
Grade: Automotive
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 3-SSIP Module
Packaging: Bulk
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118+3.83 EUR
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TLE5027CXAAD47AGXAMA1
TLE5027CXAAD47AGXAMA1
Hersteller: Infineon Technologies
Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Output Type: PWM
Package / Case: 3-SSIP Module
Packaging: Bulk
Part Status: Obsolete
Supplier Device Package: PG-SSO-3-92
Technology: Magnetoresistive
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Qualification: AEC-Q100
Grade: Automotive
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112+4.05 EUR
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TLE5009A16E1200XUMA1 infineon-tle5x09a16-d-datasheet-en.pdf
TLE5009A16E1200XUMA1
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR TDSO-16
Technology: Magnetoresistive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 3V ~ 3.6V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Bulk
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
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109+4.17 EUR
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TLE5009A16E2200XUMA1 Infineon-TLE5x09A16_D-DS-v02_00-EN.pdf?fileId=5546d462696dbf12016977889fe858c9
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR TDSO-16
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
Technology: Magnetoresistive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Bulk
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135+3.92 EUR
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TLE5025CE6747HAMA1 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
auf Bestellung 12372 Stücke:
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150+3.36 EUR
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TLE5027CIE6747HAMA1 TLE5027C_PB_7-2-13.pdf
TLE5027CIE6747HAMA1
Hersteller: Infineon Technologies
Description: SENSOR MAGNETORESISTIVE PWM 3SIP
Part Status: Obsolete
Supplier Device Package: PG-SSO-3-92
Technology: Magnetoresistive
Qualification: AEC-Q100
Grade: Automotive
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: X, Y, Z
Mounting Type: Through Hole
Output Type: PWM
Package / Case: 3-SSIP Module
Packaging: Bulk
auf Bestellung 3000 Stücke:
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AnzahlPreis
114+3.99 EUR
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TLE5009A16E2210XUMA1 infineon-tle5x09a16-d-datasheet-en.pdf
TLE5009A16E2210XUMA1
Hersteller: Infineon Technologies
Description: IC HALL SENSOR LINEAR TDSO-16
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Output Signal: Cosine, Sine
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Supplier Device Package: PG-TDSO-16
For Measuring: Angle
Technology: Magnetoresistive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: Gull Wing
Operating Temperature: -40°C ~ 125°C
Output: Analog Voltage
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 21497 Stücke:
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AnzahlPreis
109+4.17 EUR
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BTS736L2NTMA1 INFNS05478-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: BUFFER/INVERTER BASED PERIPHERAL
Produkt ist nicht verfügbar
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TLE4274GV50ATMA1 INFNS16630-1.pdf?t.download=true&u=5oefqw
TLE4274GV50ATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR FIXED LDO REG
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO263-3-1
Number of Regulators: 1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 220 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Packaging: Bulk
Current - Supply (Max): 30 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.5V @ 250mA
PSRR: 60dB (100Hz)
Produkt ist nicht verfügbar
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TLE4274GV50ATMA2 Infineon-TLE4274-DataSheet-v01_71-EN.pdf?fileId=8ac78c8c93dda25b0194f49872dd00d1
TLE4274GV50ATMA2
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO263-3-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1419 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.68 EUR
10+2.72 EUR
25+2.47 EUR
100+2.21 EUR
250+2.08 EUR
500+2.01 EUR
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CY7C4235V-15ASXC CY7C4205V%2C15V%2C25V%2C35V%2C45V%2C4425V.pdf
CY7C4235V-15ASXC
Hersteller: Infineon Technologies
Description: IC FIFO SYNC 2KX18 11NS 64TQFP
Current - Supply (Max): 30mA
Access Time: 11ns
Data Rate: 66.7MHz
Operating Temperature: 0°C ~ 70°C
Memory Size: 36K (2K x 18)
Function: Synchronous
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Voltage - Supply: 3 V ~ 3.6 V
Part Status: Obsolete
FWFT Support: No
Retransmit Capability: Yes
Programmable Flags Support: Yes
Expansion Type: Depth, Width
Bus Directional: Uni-Directional
Supplier Device Package: 64-TQFP (14x14)
auf Bestellung 1008 Stücke:
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AnzahlPreis
16+32.11 EUR
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IPD14N06S2-80 INFNS09524-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: IPD14N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 7A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 4V @ 14µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 293 pF @ 25 V
Produkt ist nicht verfügbar
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CY7C1041CV33-10BAJXE Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecab2cc43b0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY7C1041CV33-10BAJXE
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 12965 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.7 EUR
Mindestbestellmenge: 4 Stücke
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CY7C1041CV33-10BAJXET Infineon-CY7C1041CV33_Automotive_4-Mbit_(256_K_16)_Static_RAM-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecab2cc43b0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY7C1041CV33-10BAJXET
Hersteller: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48FBGA
Packaging: Cut Tape (CT)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-FBGA (7x8.5)
Part Status: Discontinued at Digi-Key
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
auf Bestellung 1975 Stücke:
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AnzahlPreis
4+4.56 EUR
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IPA60R125P6 Infineon-IPX60R125P6-DS-v02_00-en[1].pdf?fileId=5546d461464245d301468af2915b667f
IPA60R125P6
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3-111
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
Produkt ist nicht verfügbar
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IPB60R600CP INFNS11341-1.pdf?t.download=true&u=5oefqw
IPB60R600CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 220µA
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AnzahlPreis
433+1.15 EUR
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IPB60R520CP INFNS11337-1.pdf?t.download=true&u=5oefqw
IPB60R520CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
auf Bestellung 2996 Stücke:
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AnzahlPreis
378+1.29 EUR
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IPB60R250CPATMA1 IPB60R250CP_rev2.1.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a304320896aa201208b2fd3ce0087
IPB60R250CPATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO263-3
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 62000 Stücke:
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AnzahlPreis
202+2.36 EUR
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IPB60R250CP INFNS17419-1.pdf?t.download=true&u=5oefqw
IPB60R250CP
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 3.5V @ 520µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 7.8A, 10V
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BG3130RH6327XTSA1 BG3130.pdf
BG3130RH6327XTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 5V SOT363
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
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AnzahlPreis
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BTS240AHKSA1 INFNS15457-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO218-3-1
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 170W
Rds On (Max) @ Id, Vgs: 18mOhm @ 47A, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 12772 Stücke:
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AnzahlPreis
24+21.33 EUR
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IPP120N06S4H1AKSA2 IPx120N06S4-H1.pdf
IPP120N06S4H1AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 38480 Stücke:
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AnzahlPreis
127+3.51 EUR
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IPI120N06S402AKSA2 IPx120N06S4-02.pdf
IPI120N06S402AKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO262-3-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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AnzahlPreis
135+3.31 EUR
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IPB120N06S4H1ATMA2 Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf
IPB120N06S4H1ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC120N06S5N017ATMA1 Infineon-IAUC120N06S5N017-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f48ce58a61bc
IAUC120N06S5N017ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TDSON-8-43
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
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AnzahlPreis
5000+1.43 EUR
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IAUC120N06S5N017ATMA1 Infineon-IAUC120N06S5N017-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f48ce58a61bc
IAUC120N06S5N017ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TDSON-8-43
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 95.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 9644 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+4.63 EUR
10+3 EUR
100+2.08 EUR
500+1.75 EUR
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EVALIMOTION2GOTOBO1 Infineon-EVAL-iMOTION2GO-UserManual-v01_01-EN.pdf?fileId=5546d462719b59230171abbcc2b4481b
EVALIMOTION2GOTOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMC101T
Contents: Board(s)
Part Status: Active
Utilized IC / Part: IMC101T
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Primary Attributes: Motors (BLDC)
Supplied Contents: Board(s)
auf Bestellung 5 Stücke:
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AnzahlPreis
1+38.93 EUR
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IRFH7440TRPBFTR irfh7440pbf.pdf?fileId=5546d462533600a40153561f0e821eed
Hersteller: Infineon Technologies
Description: IRFH7440 - 12V-300V N-CHANNEL PO
Produkt ist nicht verfügbar
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SAB-C161PI-LM3V INFNS00746-1.pdf?t.download=true&u=5oefqw
SAB-C161PI-LM3V
Hersteller: Infineon Technologies
Description: SAB-C161PI-LF 3V CA - LEGACY 16-
Number of I/O: 76
Part Status: Active
Supplier Device Package: P-MQFP-100-2
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, I²C, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Core Size: 16-Bit
Data Converters: A/D 4x10b
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 3K x 8
Speed: 20MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 147 Stücke:
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AnzahlPreis
50+9.76 EUR
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SAB-C161O-L25M INFNS01615-1.pdf?t.download=true&u=5oefqw
SAB-C161O-L25M
Hersteller: Infineon Technologies
Description: SAB-C161O-L25M HA - LEGACY 16-BI
DigiKey Programmable: Not Verified
Number of I/O: 63
Part Status: Active
Supplier Device Package: P-MQFP-80-1
Peripherals: POR, PWM, WDT
Connectivity: EBI/EMI, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 16-Bit
Core Processor: C166
Program Memory Type: ROMless
Oscillator Type: External, Internal
Operating Temperature: 0°C ~ 70°C (TA)
RAM Size: 2K x 8
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Bulk
auf Bestellung 850 Stücke:
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AnzahlPreis
28+18.51 EUR
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SPD03N60S5XT Infineon-SPD_U03N60S5-DS-v02_05-en1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: SPD03N60 - 600V COOLMOS N-CHANNE
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO252-3-313
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Vgs(th) (Max) @ Id: 5.5V @ 135µA
auf Bestellung 1000 Stücke:
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AnzahlPreis
611+0.86 EUR
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PSB21653EV1.4-G
Hersteller: Infineon Technologies
Description: INCA -IP2 SINGLE-CHIP IP PHONE W
Packaging: Bulk
Part Status: Active
auf Bestellung 429 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+76.82 EUR
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IRFR9N20DTR irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b
IRFR9N20DTR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFR9N20DTRL irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b
IRFR9N20DTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRFR9N20DTRR irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b
IRFR9N20DTRR
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D-Pak
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 86W (Tc)
Produkt ist nicht verfügbar
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IRFR9N20DPBF description irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b
IRFR9N20DPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Produkt ist nicht verfügbar
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IRFR9N20DTRLPBF irfr9n20dpbf.pdf?fileId=5546d462533600a40153563610b1213b
IRFR9N20DTRLPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 9.4A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power Dissipation (Max): 86W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
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TC333LP32F200FAALXUMA1 Infineon-TriCore_Family_BR-ProductBrochure-v01_00-EN.pdf?fileId=5546d4625d5945ed015dc81f47b436c7
TC333LP32F200FAALXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 248K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: TriCore™
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: DMA, I2S, PWM, WDT
Peripherals: DMA, I2S, PWM, WDT
Supplier Device Package: PG-TQFP-100-23
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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2EDS8265HXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS8265HXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-16-30
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 959 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.46 EUR
10+4.1 EUR
25+3.76 EUR
100+3.39 EUR
250+3.22 EUR
500+3.18 EUR
Mindestbestellmenge: 4 Stücke
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IPL60R065C7AUMA1 Infineon-IPL60R065C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151b090ab7b75cd
IPL60R065C7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 15.9A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-VSON-4-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
auf Bestellung 4538 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+11.11 EUR
10+7.52 EUR
100+5.69 EUR
Mindestbestellmenge: 2 Stücke
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IRF6811STR1PBF irf6811spbf.pdf?fileId=5546d462533600a4015355f0b3661ab6
Hersteller: Infineon Technologies
Description: MOSFET N CH 25V 19A DIRECTFET
Produkt ist nicht verfügbar
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IGD15N65T6ARMA1 Infineon-IGD15N65T6-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766c35b2760de1
IGD15N65T6ARMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 100 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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IGD15N65T6ARMA1 Infineon-IGD15N65T6-DataSheet-v02_03-EN.pdf?fileId=5546d462766a0c1701766c35b2760de1
IGD15N65T6ARMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 11.5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/117ns
Switching Energy: 230µJ (on), 110µJ (off)
Test Condition: 400V, 11.5A, 47Ohm, 15V
Gate Charge: 37 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 57.5 A
Power - Max: 100 W
Produkt ist nicht verfügbar
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AIGB15N65H5ATMA1 Infineon-AIGB15N65H5-DataSheet-v02_01-EN.pdf?fileId=5546d462749a7c2d0174b6669e363172
AIGB15N65H5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 30A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Td (on/off) @ 25°C: 24ns/22ns
Switching Energy: 160µJ (on), 40µJ (off)
Test Condition: 400V, 7.5A, 39Ohm, 15V
Gate Charge: 40 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 105 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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AIKB15N65DH5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB15N65DH5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AIKB15N65DF5ATMA1 Infineon-Semiconductor_solutions_for_hybrid_electric_and_electric_cars-ABR-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a76250c4ab4
AIKB15N65DF5ATMA1
Hersteller: Infineon Technologies
Description: IGBT NPT 650V 15A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Produkt ist nicht verfügbar
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PEF2260NV3.0SICOFI
Hersteller: Infineon Technologies
Description: SICOFI CODEC FILTER
auf Bestellung 90 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+27.53 EUR
Mindestbestellmenge: 20 Stücke
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2EDF7175FXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7175FXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16
Gate Type: MOSFET (N-Channel, P-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Supplier Device Package: PG-DSO-16-11
Input Type: Non-Inverting
Voltage - Supply: 20V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 1A, 2A
Logic Voltage - VIL, VIH: -, 1.65V
auf Bestellung 7861 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.75 EUR
10+2.79 EUR
25+2.55 EUR
100+2.29 EUR
250+2.16 EUR
500+2.08 EUR
1000+2.02 EUR
Mindestbestellmenge: 5 Stücke
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2EDS8165HXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDS8165HXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 16SOIC
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 1A, 2A
Logic Voltage - VIL, VIH: -, 1.65V
Gate Type: MOSFET (N-Channel, P-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Supplier Device Package: PG-DSO-16-30
Input Type: Non-Inverting
Voltage - Supply: 20V
Operating Temperature: -40°C ~ 125°C (TA)
auf Bestellung 1700 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.41 EUR
10+2.54 EUR
25+2.31 EUR
100+2.07 EUR
250+1.95 EUR
500+1.88 EUR
Mindestbestellmenge: 6 Stücke
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2EDF7275FXUMA2 Infineon-2EDF7275F-DS-v02_04-EN.pdf?fileId=5546d462636cc8fb0163b08fd9203057
2EDF7275FXUMA2
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDG DSO16
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1500 V
Supplier Device Package: PG-DSO-16-11
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: -, 1.65V
Current - Peak Output (Source, Sink): 4A, 8A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 12458 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+3.82 EUR
10+2.84 EUR
25+2.59 EUR
100+2.32 EUR
250+2.19 EUR
500+2.14 EUR
Mindestbestellmenge: 5 Stücke
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SPB10N10 G SPB10N10.pdf
SPB10N10 G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 10.3A TO263-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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BFR182E6327 INFNS10845-1.pdf?t.download=true&u=5oefqw
BFR182E6327
Hersteller: Infineon Technologies
Description: BFR182 - LOW-NOISE SI TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12dB ~ 18dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
auf Bestellung 79170 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3480+0.16 EUR
Mindestbestellmenge: 3480 Stücke
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IRFR7746PBF-INF IRSD-S-A0000176414-1.pdf?t.download=true&u=5oefqw
IRFR7746PBF-INF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 75V 56A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
Produkt ist nicht verfügbar
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BSC120N03LSG INFNS27238-1.pdf?t.download=true&u=5oefqw
BSC120N03LSG
Hersteller: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Produkt ist nicht verfügbar
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IPB120N03S4L03ATMA1 Infineon-IPB120N03S4L-03-DS-v01_01-EN.pdf?fileId=5546d46249a28d750149a3606cf60466
IPB120N03S4L03ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 120A D2PAK
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 2.2V @ 40µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
195+2.34 EUR
Mindestbestellmenge: 195 Stücke
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BSC074N15NS5ATMA1 Infineon-BSC074N15NS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626f229553016f8032bc9a7092
BSC074N15NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 114A TSON-8-3
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 50A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 136µA
Supplier Device Package: PG-TSON-8-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 75 V
auf Bestellung 143 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+8.06 EUR
10+5.35 EUR
100+3.82 EUR
Mindestbestellmenge: 3 Stücke
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PTAB182002TCV2XWSA1
Hersteller: Infineon Technologies
Description: IC RF FET LDMOS 190W H-49248H-4
Produkt ist nicht verfügbar
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REFENGCOOLFAN1KWTOBO1 Infineon-1kW_Engine_Cooling_Fan_Reference_Design_Fact_Sheet-ProductBrief-v01_00-EN.pdf?fileId=5546d46272e49d2a0172ffa9a403738e
REFENGCOOLFAN1KWTOBO1
Hersteller: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
Function: Power Supply
Type: Power Management
Contents: Board(s)
Supplied Contents: Board(s)
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+1401.56 EUR
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S2GO3DTLI493DW2BWA0TOBO1 Infineon-TLI493D-W2BW-DataSheet-v01_00-EN.pdf?fileId=5546d46273a5366f0173b9bc938d2e1d
S2GO3DTLI493DW2BWA0TOBO1
Hersteller: Infineon Technologies
Description: DEV KIT
Packaging: Bulk
Interface: I2C
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Hall Effect
Utilized IC / Part: TLI493D
Supplied Contents: Board(s)
Embedded: Yes
Sensing Range: ±160mT
Part Status: Active
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+23.53 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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