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TLE6714G TLE6714G Infineon Technologies tle6710q_2g_4g.pdf?t.download=true&u=5oefqw Description: QUAD FIRING AIRBAG IC
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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BSM100GB120DN2S7HOSA1 Infineon Technologies EUPCS02845-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
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BSM300GA120DN2S2HDLA1 Infineon Technologies Description: POWER MODULE IGBT 1200V AG-62MM
Part Status: Obsolete
Packaging: Bulk
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BSM200GA170DN2SE325HOSA1 Infineon Technologies Description: IGBT MODULE
Packaging: Bulk
Produkt ist nicht verfügbar
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IAUC120N04S6L012ATMA1 IAUC120N04S6L012ATMA1 Infineon Technologies Infineon-IAUC120N04S6L012-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3c0351219 Description: IAUC120N04S6L012ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V
Qualification: AEC-Q101
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IAUC120N04S6L012ATMA1 IAUC120N04S6L012ATMA1 Infineon Technologies Infineon-IAUC120N04S6L012-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3c0351219 Description: IAUC120N04S6L012ATMA1
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2V @ 60µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
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EVAL-IMM101T-046TOBO1 EVAL-IMM101T-046TOBO1 Infineon Technologies Infineon-Eval-IMM101T-UserManual-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016ca8dad3542c50 Description: EVAL BOARD FOR IMM101T-046
Contents: Board(s)
Primary Attributes: Motors (BLDC, PMSM)
Supplied Contents: Board(s)
Utilized IC / Part: IMM101T-046
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
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IPA50R650CEXKSA2 IPA50R650CEXKSA2 Infineon Technologies IPA50R650CE.pdf Description: MOSFET N-CH 500V 4.6A TO220
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 27.2W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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IPA50R650CEZKSA2 Infineon Technologies Infineon-IPA50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d4d1cdd003a9 Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 27.2W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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IPL60R085P7AUMA1 IPL60R085P7AUMA1 Infineon Technologies Infineon-IPL60R085P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed1c9c5b3f Description: MOSFET N-CH 600V 39A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
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IPL60R085P7AUMA1 IPL60R085P7AUMA1 Infineon Technologies Infineon-IPL60R085P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed1c9c5b3f Description: MOSFET N-CH 600V 39A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
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CY7C2564XV18-450BZXC CY7C2564XV18-450BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 450 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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IRGC100B120UB Infineon Technologies IRGC100B120UB_7-6-15.pdf Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
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2EDN7224GXTMA1 Infineon Technologies Description: 2EDN7224G - GATE DRIVER
Part Status: Active
Packaging: Bulk
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2EDN7223FXTMA1 Infineon Technologies Description: POWER SWITCH, TRANSMITTER, REC
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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XMC1403Q040X0128AAXUMA1 XMC1403Q040X0128AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 128KB FLASH 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-17
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
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1ED44173N01BXTSA1 1ED44173N01BXTSA1 Infineon Technologies infineon-1ed44173n01b-datasheet-en.pdf Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8.6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
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2ED28073J06FXUMA1 2ED28073J06FXUMA1 Infineon Technologies Infineon-2ED28073J06F-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017181f76e671a4d Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Current - Peak Output (Source, Sink): 20mA, 80mA
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 0.8V, 2.2 V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
High Side Voltage - Max (Bootstrap): 600 V
Input Type: CMOS, TTL
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Part Status: Active
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Rise / Fall Time (Typ): 1.5µs, 225ns
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TLE5014PROGKITTOBO1 TLE5014PROGKITTOBO1 Infineon Technologies Infineon-TLE5014-Eval_Kit%20and%20SatelliteBoard-v01_00-general_description-GS-v01_00-EN.pdf?fileId=5546d46264fee02f01651a11ee7375dd Description: EVALUATION BOARD FOR TLE5014
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: TLE5014
Sensor Type: Magnetic, GMR (Giant Magnetoresistive)
Packaging: Box
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BTN7970B BTN7970B Infineon Technologies INFNS11665-1.pdf?t.download=true&u=5oefqw Description: IC HALF BRIDGE DRVR 70A TO263-7
Features: Charge Pump, Status Flag
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Rds On (Typ): 9mOhm LS, 7mOhm HS
Applications: General Purpose
Current - Output / Channel: 70A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
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IGP01N120H2XKSA1 IGP01N120H2XKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT 1200V 3.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 13ns/370ns
Switching Energy: 140µJ
Test Condition: 800V, 1A, 241Ohm, 15V
Gate Charge: 8.6 nC
Current - Collector (Ic) (Max): 3.2 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 3.5 A
Power - Max: 28 W
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IGP01N120H2 IGP01N120H2 Infineon Technologies INFNS16255-1.pdf?t.download=true&u=5oefqw Description: IGBT 1200V 3.2A 28W TO220-3
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Power - Max: 28 W
Current - Collector Pulsed (Icm): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3.2 A
Part Status: Active
Gate Charge: 8.6 nC
Test Condition: 800V, 1A, 241Ohm, 15V
Switching Energy: 140µJ
Td (on/off) @ 25°C: 13ns/370ns
Supplier Device Package: PG-TO220-3-1
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
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SIGC76T60R3EX7SA1 SIGC76T60R3EX7SA1 Infineon Technologies Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
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TLS850B0TBV33ATMA1 TLS850B0TBV33ATMA1 Infineon Technologies Infineon-TLS850B0TB%20V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600cf0f9cb6d40 Description: IC REG LINEAR 3.3V PG-TO263-5-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Qualification: AEC-Q100
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TLS850B0TBV33ATMA1 TLS850B0TBV33ATMA1 Infineon Technologies Infineon-TLS850B0TB%20V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600cf0f9cb6d40 Description: IC REG LINEAR 3.3V PG-TO263-5-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Qualification: AEC-Q100
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AUIPS8121RTRLXSMA1 Infineon Technologies Description: IR_HSS-LSS-GATEDRIVER
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GATELEAD28134XPSA1 Infineon Technologies Description: DUMMY 57
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GATELEAD28128HPSA1 Infineon Technologies Description: ACCY GATE LEAD FOR MODULE
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GATELEAD28129HPSA1 Infineon Technologies Description: ACCY GATE LEAD FOR MODULE
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GATELEAD28133HPSA1 Infineon Technologies Description: ACCY GATE LEAD FOR MODULE
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GATELEAD30258HPSA1 Infineon Technologies Description: ACCY GATE LEAD FOR MODULE
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GATELEADL500G2K2XPSA1 GATELEADL500G2K2XPSA1 Infineon Technologies Infineon-Gate%20%20leads%20for%20PB20-DS-v03_01-EN.pdf?fileId=5546d462525dbac401532c0b43cd707d Description: ACCY GATE LEAD FOR MODULE
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GATELEADRD406XPSA1 Infineon Technologies Description: STD THYR/DIODEN DISC
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GATELEADWH406XPSA1 Infineon Technologies Description: STD THYR/DIODEN DISC
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GATELEADWHBK750XXPSA1 Infineon Technologies Description: STD THYR/DIODEN DISC
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GATELEADWHBN661XXPSA1 Infineon Technologies Description: STD THYR/DIODEN DISC
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GATELEADWHBU445XXPSA1 Infineon Technologies Description: STD THYR/DIODEN DISC
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GATELEADWHRD394XXPSA1 Infineon Technologies Description: STD THYR/DIODEN DISC
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GATELEADWHRD762XPSA1 Infineon Technologies Description: STD THYR/DIODEN DISC
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TLE4254EJAXUMA2 TLE4254EJAXUMA2 Infineon Technologies Infineon-TLE4254-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f928c6663dc6 Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
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BSZ099N06LS5ATMA1 BSZ099N06LS5ATMA1 Infineon Technologies Infineon-BSZ099N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e5d71c9f4f8e Description: MOSFET N-CH 60V 46A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
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BSZ099N06LS5ATMA1 BSZ099N06LS5ATMA1 Infineon Technologies Infineon-BSZ099N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e5d71c9f4f8e Description: MOSFET N-CH 60V 46A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
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TLE94613ESXUMA1 TLE94613ESXUMA1 Infineon Technologies Infineon-TLE9461-3ES-DS-v01_00-EN.pdf?fileId=5546d46264fee02f016519e9691975c4 Description: IC SYST BASIS CHIP TSDSO-24-1
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: System Basis Chip (SBC)
Applications: CAN
Supplier Device Package: PG-TSDSO-24-1
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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BC847CB5003 BC847CB5003 Infineon Technologies SIEMD095-475.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 0.1A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
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PED3264HV1.4 Infineon Technologies Description: SLIC FILTER
Packaging: Bulk
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BSL806NL6327 BSL806NL6327 Infineon Technologies INFNS16741-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL N-CHANNEL MOSFET
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BSC22DN20NS3GATMA1 BSC22DN20NS3GATMA1 Infineon Technologies BSC22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1582d2df1a48 Description: MOSFET N-CH 200V 7A TDSON-8-5
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 4V @ 13µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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BSC22DN20NS3GATMA1 BSC22DN20NS3GATMA1 Infineon Technologies BSC22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1582d2df1a48 Description: MOSFET N-CH 200V 7A TDSON-8-5
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 4V @ 13µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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ESD241B1W0201E6327XTSA1 ESD241B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD241-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015d1228d9c44cad Description: TVS DIODE 3.3VWM 6VC PGWLL23
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 25W
Voltage - Clamping (Max) @ Ipp: 6V
Bidirectional Channels: 1
Supplier Device Package: PG-WLL-2-3
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1GHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
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ESD241B1W0201E6327XTSA1 ESD241B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD241-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015d1228d9c44cad Description: TVS DIODE 3.3VWM 6VC PGWLL23
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 25W
Voltage - Clamping (Max) @ Ipp: 6V
Bidirectional Channels: 1
Supplier Device Package: PG-WLL-2-3
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1GHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
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RADAR-LOBSTAR-KIT RTN773 Infineon Technologies Part_Number_Guide_Web.pdf Description: RF EVAL KIT
Packaging: Box
Supplied Contents: Board(s)
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CY8C3665LTI-199 CY8C3665LTI-199 Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 32KB FLASH 68QFN
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IRSM505-084DA2 Infineon Technologies IRSM5%280%2C1%295-084_Series.pdf Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Packaging: Bulk
Part Status: Obsolete
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIPA
Voltage - Load: 200V (Max)
Technology: UMOS
Current - Peak Output: 15A
Current - Output / Channel: 4.6A
Applications: AC Motors
Rds On (Typ): 340mOhm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Features: Bootstrap Circuit
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IRSM505-035PATRBUMA1 Infineon Technologies Description: CIPOS MICRO
Part Status: Obsolete
Load Type: Inductive
Supplier Device Package: 23-SOP
Voltage - Load: 13.5V ~ 16.5V
Current - Output / Channel: 2.1A
Applications: DC Motors, General Purpose
Rds On (Typ): 1.8Ohm LS, 1.8Ohm HS
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: 32-PowerSMD Module, 23 Leads
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
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IRSM515-084DA2-INF Infineon Technologies irsm505-084.pdf?fileId=5546d462533600a40153567c05732889 Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Voltage - Load: 200V (Max)
Technology: NMOS
Current - Peak Output: 15A
Current - Output / Channel: 4.6A
Applications: AC Motors
Rds On (Typ): 340mOhm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Through Hole
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Features: Bootstrap Circuit
Packaging: Bulk
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: UVLO
Supplier Device Package: 23-DIPA
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IRSM515-065DA IRSM515-065DA Infineon Technologies irsm505-065.pdf Description: IC HALF BRIDGE DRIVER 2.6A 23DIP
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 400V (Max)
Technology: UMOS
Current - Peak Output: 15A
Current - Output / Channel: 2.6A
Applications: AC Motors
Rds On (Typ): 1Ohm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Features: Bootstrap Circuit
Packaging: Bulk
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IRSM515-035PATR IRSM515-035PATR Infineon Technologies IRSD-S-A0000193667-1.pdf?t.download=true&u=5oefqw Description: MICRO MCM
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BAT68E6327 BAT68E6327 Infineon Technologies INFNS15410-1.pdf?t.download=true&u=5oefqw Description: BAT68 - RF MIXER AND DETECTOR SC
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Voltage - Peak Reverse (Max): 8V
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - Single
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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SLB9635TT12FW316NOXUMA1 SLB9635TT12FW316NOXUMA1 Infineon Technologies SLB 9635 TT1.2.pdf Description: SECURITY IC'S/AUTHENTICATION IC'
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: LPC
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: 28-TSSOP
Part Status: Not For New Designs
Number of I/O: 2
DigiKey Programmable: Not Verified
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TLE5014SATELLITETOBO1 Infineon Technologies Infineon-TLE5014-Eval_Kit%20and%20SatelliteBoard-v01_00-general_description-GS-v01_00-EN.pdf?fileId=5546d46264fee02f01651a11ee7375dd Description: EVALUATION BOARD FOR TLE5014
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TLE6714G tle6710q_2g_4g.pdf?t.download=true&u=5oefqw
TLE6714G
Hersteller: Infineon Technologies
Description: QUAD FIRING AIRBAG IC
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
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BSM100GB120DN2S7HOSA1 EUPCS02845-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
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BSM300GA120DN2S2HDLA1
Hersteller: Infineon Technologies
Description: POWER MODULE IGBT 1200V AG-62MM
Part Status: Obsolete
Packaging: Bulk
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BSM200GA170DN2SE325HOSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Produkt ist nicht verfügbar
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IAUC120N04S6L012ATMA1 Infineon-IAUC120N04S6L012-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3c0351219
IAUC120N04S6L012ATMA1
Hersteller: Infineon Technologies
Description: IAUC120N04S6L012ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IAUC120N04S6L012ATMA1 Infineon-IAUC120N04S6L012-DataSheet-v01_00-EN.pdf?fileId=5546d4626afcd350016b1ca3c0351219
IAUC120N04S6L012ATMA1
Hersteller: Infineon Technologies
Description: IAUC120N04S6L012ATMA1
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4832 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2V @ 60µA
Power Dissipation (Max): 115W (Tc)
Rds On (Max) @ Id, Vgs: 1.21mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
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6+4 EUR
10+2.57 EUR
100+1.74 EUR
500+1.39 EUR
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EVAL-IMM101T-046TOBO1 Infineon-Eval-IMM101T-UserManual-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016ca8dad3542c50
EVAL-IMM101T-046TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR IMM101T-046
Contents: Board(s)
Primary Attributes: Motors (BLDC, PMSM)
Supplied Contents: Board(s)
Utilized IC / Part: IMM101T-046
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
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IPA50R650CEXKSA2 IPA50R650CE.pdf
IPA50R650CEXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.6A TO220
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-FP
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 27.2W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
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644+0.84 EUR
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IPA50R650CEZKSA2 Infineon-IPA50R650CE-DS-v02_03-EN.pdf?fileId=db3a304339d29c450139d4d1cdd003a9
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 342 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 13V
Part Status: Active
Supplier Device Package: PG-TO220 Full Pack
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Power Dissipation (Max): 27.2W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.8A, 13V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Produkt ist nicht verfügbar
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IPL60R085P7AUMA1 Infineon-IPL60R085P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed1c9c5b3f
IPL60R085P7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 39A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
Produkt ist nicht verfügbar
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IPL60R085P7AUMA1 Infineon-IPL60R085P7-DS-v02_00-EN.pdf?fileId=5546d4625ee5d4cd015eebed1c9c5b3f
IPL60R085P7AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 39A 4VSON
Packaging: Cut Tape (CT)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
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CY7C2564XV18-450BZXC download
CY7C2564XV18-450BZXC
Hersteller: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 450 MHz
Technology: SRAM - Synchronous, QDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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IRGC100B120UB IRGC100B120UB_7-6-15.pdf
Hersteller: Infineon Technologies
Description: IGBT CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A
Supplier Device Package: Die
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Produkt ist nicht verfügbar
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2EDN7224GXTMA1
Hersteller: Infineon Technologies
Description: 2EDN7224G - GATE DRIVER
Part Status: Active
Packaging: Bulk
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295+1.87 EUR
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2EDN7223FXTMA1
Hersteller: Infineon Technologies
Description: POWER SWITCH, TRANSMITTER, REC
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 54508 Stücke:
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503+1.19 EUR
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XMC1403Q040X0128AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1403Q040X0128AAXUMA1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40VQFN
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-17
Part Status: Active
Number of I/O: 27
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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1ED44173N01BXTSA1 infineon-1ed44173n01b-datasheet-en.pdf
1ED44173N01BXTSA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 8.6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-SOT23-6-3
Rise / Fall Time (Typ): 5ns, 5ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 2.6A, 2.6A
Part Status: Active
DigiKey Programmable: Not Verified
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20+1.09 EUR
28+0.76 EUR
31+0.69 EUR
100+0.6 EUR
250+0.56 EUR
500+0.54 EUR
1000+0.51 EUR
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2ED28073J06FXUMA1 Infineon-2ED28073J06F-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017181f76e671a4d
2ED28073J06FXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Current - Peak Output (Source, Sink): 20mA, 80mA
DigiKey Programmable: Not Verified
Logic Voltage - VIL, VIH: 0.8V, 2.2 V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
High Side Voltage - Max (Bootstrap): 600 V
Input Type: CMOS, TTL
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 125°C (TA)
Part Status: Active
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Rise / Fall Time (Typ): 1.5µs, 225ns
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12+1.84 EUR
16+1.33 EUR
25+1.2 EUR
100+1.06 EUR
250+0.99 EUR
500+0.95 EUR
1000+0.92 EUR
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TLE5014PROGKITTOBO1 Infineon-TLE5014-Eval_Kit%20and%20SatelliteBoard-v01_00-general_description-GS-v01_00-EN.pdf?fileId=5546d46264fee02f01651a11ee7375dd
TLE5014PROGKITTOBO1
Hersteller: Infineon Technologies
Description: EVALUATION BOARD FOR TLE5014
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Utilized IC / Part: TLE5014
Sensor Type: Magnetic, GMR (Giant Magnetoresistive)
Packaging: Box
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1+226.25 EUR
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BTN7970B INFNS11665-1.pdf?t.download=true&u=5oefqw
BTN7970B
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRVR 70A TO263-7
Features: Charge Pump, Status Flag
Packaging: Bulk
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Rds On (Typ): 9mOhm LS, 7mOhm HS
Applications: General Purpose
Current - Output / Channel: 70A
Current - Peak Output: 70A
Technology: DMOS
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Over Current, Over Temperature, Over Voltage, Short Circuit
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
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IGP01N120H2XKSA1 fundamentals-of-power-semiconductors
IGP01N120H2XKSA1
Hersteller: Infineon Technologies
Description: IGBT 1200V 3.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
Supplier Device Package: PG-TO220-3-1
Td (on/off) @ 25°C: 13ns/370ns
Switching Energy: 140µJ
Test Condition: 800V, 1A, 241Ohm, 15V
Gate Charge: 8.6 nC
Current - Collector (Ic) (Max): 3.2 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 3.5 A
Power - Max: 28 W
auf Bestellung 39512 Stücke:
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346+1.57 EUR
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IGP01N120H2 INFNS16255-1.pdf?t.download=true&u=5oefqw
IGP01N120H2
Hersteller: Infineon Technologies
Description: IGBT 1200V 3.2A 28W TO220-3
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Power - Max: 28 W
Current - Collector Pulsed (Icm): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 3.2 A
Part Status: Active
Gate Charge: 8.6 nC
Test Condition: 800V, 1A, 241Ohm, 15V
Switching Energy: 140µJ
Td (on/off) @ 25°C: 13ns/370ns
Supplier Device Package: PG-TO220-3-1
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 1A
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507+1.13 EUR
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SIGC76T60R3EX7SA1
SIGC76T60R3EX7SA1
Hersteller: Infineon Technologies
Description: IGBT 3 CHIP 600V WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 150A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 450 A
Produkt ist nicht verfügbar
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TLS850B0TBV33ATMA1 Infineon-TLS850B0TB%20V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600cf0f9cb6d40
TLS850B0TBV33ATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V PG-TO263-5-1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Qualification: AEC-Q100
auf Bestellung 1000 Stücke:
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1000+2.38 EUR
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TLS850B0TBV33ATMA1 Infineon-TLS850B0TB%20V33-DS-v01_00-EN.pdf?fileId=5546d4625fe3678401600cf0f9cb6d40
TLS850B0TBV33ATMA1
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V PG-TO263-5-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Qualification: AEC-Q100
auf Bestellung 1637 Stücke:
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5+4.44 EUR
10+3.3 EUR
25+3.01 EUR
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500+2.48 EUR
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AUIPS8121RTRLXSMA1
Hersteller: Infineon Technologies
Description: IR_HSS-LSS-GATEDRIVER
Produkt ist nicht verfügbar
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GATELEAD28134XPSA1
Hersteller: Infineon Technologies
Description: DUMMY 57
Produkt ist nicht verfügbar
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GATELEAD28128HPSA1
Hersteller: Infineon Technologies
Description: ACCY GATE LEAD FOR MODULE
Produkt ist nicht verfügbar
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GATELEAD28129HPSA1
Hersteller: Infineon Technologies
Description: ACCY GATE LEAD FOR MODULE
Produkt ist nicht verfügbar
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GATELEAD28133HPSA1
Hersteller: Infineon Technologies
Description: ACCY GATE LEAD FOR MODULE
Produkt ist nicht verfügbar
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GATELEAD30258HPSA1
Hersteller: Infineon Technologies
Description: ACCY GATE LEAD FOR MODULE
Produkt ist nicht verfügbar
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GATELEADL500G2K2XPSA1 Infineon-Gate%20%20leads%20for%20PB20-DS-v03_01-EN.pdf?fileId=5546d462525dbac401532c0b43cd707d
GATELEADL500G2K2XPSA1
Hersteller: Infineon Technologies
Description: ACCY GATE LEAD FOR MODULE
Produkt ist nicht verfügbar
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GATELEADRD406XPSA1
Hersteller: Infineon Technologies
Description: STD THYR/DIODEN DISC
Produkt ist nicht verfügbar
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GATELEADWH406XPSA1
Hersteller: Infineon Technologies
Description: STD THYR/DIODEN DISC
Produkt ist nicht verfügbar
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GATELEADWHBK750XXPSA1
Hersteller: Infineon Technologies
Description: STD THYR/DIODEN DISC
Produkt ist nicht verfügbar
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GATELEADWHBN661XXPSA1
Hersteller: Infineon Technologies
Description: STD THYR/DIODEN DISC
Produkt ist nicht verfügbar
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GATELEADWHBU445XXPSA1
Hersteller: Infineon Technologies
Description: STD THYR/DIODEN DISC
Produkt ist nicht verfügbar
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GATELEADWHRD394XXPSA1
Hersteller: Infineon Technologies
Description: STD THYR/DIODEN DISC
Produkt ist nicht verfügbar
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GATELEADWHRD762XPSA1
Hersteller: Infineon Technologies
Description: STD THYR/DIODEN DISC
Produkt ist nicht verfügbar
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TLE4254EJAXUMA2 Infineon-TLE4254-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f928c6663dc6
TLE4254EJAXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR POS ADJ 70MA 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 70mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8-27
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.4V @ 70mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 15 mA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BSZ099N06LS5ATMA1 Infineon-BSZ099N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e5d71c9f4f8e
BSZ099N06LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 46A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.75 EUR
Mindestbestellmenge: 5000 Stücke
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BSZ099N06LS5ATMA1 Infineon-BSZ099N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e5d71c9f4f8e
BSZ099N06LS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 46A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.19 EUR
11+2.02 EUR
50+1.51 EUR
100+1.34 EUR
500+1.06 EUR
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TLE94613ESXUMA1 Infineon-TLE9461-3ES-DS-v01_00-EN.pdf?fileId=5546d46264fee02f016519e9691975c4
TLE94613ESXUMA1
Hersteller: Infineon Technologies
Description: IC SYST BASIS CHIP TSDSO-24-1
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: System Basis Chip (SBC)
Applications: CAN
Supplier Device Package: PG-TSDSO-24-1
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
auf Bestellung 2352 Stücke:
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AnzahlPrivatkunde
4+6.06 EUR
10+4.55 EUR
25+4.16 EUR
100+3.75 EUR
250+3.55 EUR
500+3.5 EUR
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BC847CB5003 SIEMD095-475.pdf?t.download=true&u=5oefqw
BC847CB5003
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT23-3-11
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-11
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 330 mW
auf Bestellung 30000 Stücke:
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8955+0.055 EUR
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PED3264HV1.4
Hersteller: Infineon Technologies
Description: SLIC FILTER
Packaging: Bulk
auf Bestellung 504 Stücke:
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AnzahlPrivatkunde
92+6.26 EUR
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BSL806NL6327 INFNS16741-1.pdf?t.download=true&u=5oefqw
BSL806NL6327
Hersteller: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Produkt ist nicht verfügbar
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BSC22DN20NS3GATMA1 BSC22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1582d2df1a48
BSC22DN20NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 7A TDSON-8-5
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 4V @ 13µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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5000+0.7 EUR
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BSC22DN20NS3GATMA1 BSC22DN20NS3+Rev2.2.pdf?folderId=db3a304325305e6d012596c6ca7b290a&fileId=db3a30432ad629a6012b1582d2df1a48
BSC22DN20NS3GATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 7A TDSON-8-5
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-5
Vgs(th) (Max) @ Id: 4V @ 13µA
Power Dissipation (Max): 34W (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 7920 Stücke:
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9+2.56 EUR
13+1.65 EUR
100+1.18 EUR
500+0.92 EUR
1000+0.82 EUR
2000+0.77 EUR
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ESD241B1W0201E6327XTSA1 Infineon-ESD241-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015d1228d9c44cad
ESD241B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 6VC PGWLL23
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 25W
Voltage - Clamping (Max) @ Ipp: 6V
Bidirectional Channels: 1
Supplier Device Package: PG-WLL-2-3
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1GHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
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15000+0.031 EUR
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ESD241B1W0201E6327XTSA1 Infineon-ESD241-B1-W0201-DS-v01_00-EN.pdf?fileId=5546d4625cc9456a015d1228d9c44cad
ESD241B1W0201E6327XTSA1
Hersteller: Infineon Technologies
Description: TVS DIODE 3.3VWM 6VC PGWLL23
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 25W
Voltage - Clamping (Max) @ Ipp: 6V
Bidirectional Channels: 1
Supplier Device Package: PG-WLL-2-3
Voltage - Reverse Standoff (Typ): 3.3V
Current - Peak Pulse (10/1000µs): 4.5A (8/20µs)
Capacitance @ Frequency: 6.5pF @ 1GHz
Applications: General Purpose
Operating Temperature: -55°C ~ 125°C
Type: Zener
Mounting Type: Surface Mount
Package / Case: 0201 (0603 Metric)
Packaging: Cut Tape (CT)
auf Bestellung 17183 Stücke:
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112+0.19 EUR
179+0.12 EUR
367+0.057 EUR
500+0.054 EUR
1000+0.048 EUR
5000+0.046 EUR
Mindestbestellmenge: 112 Stücke
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RADAR-LOBSTAR-KIT RTN773 Part_Number_Guide_Web.pdf
Hersteller: Infineon Technologies
Description: RF EVAL KIT
Packaging: Box
Supplied Contents: Board(s)
Produkt ist nicht verfügbar
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CY8C3665LTI-199 #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3665LTI-199
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
auf Bestellung 842 Stücke:
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49+12.26 EUR
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IRSM505-084DA2 IRSM5%280%2C1%295-084_Series.pdf
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Packaging: Bulk
Part Status: Obsolete
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIPA
Voltage - Load: 200V (Max)
Technology: UMOS
Current - Peak Output: 15A
Current - Output / Channel: 4.6A
Applications: AC Motors
Rds On (Typ): 340mOhm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Features: Bootstrap Circuit
auf Bestellung 495 Stücke:
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66+9.14 EUR
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IRSM505-035PATRBUMA1
Hersteller: Infineon Technologies
Description: CIPOS MICRO
Part Status: Obsolete
Load Type: Inductive
Supplier Device Package: 23-SOP
Voltage - Load: 13.5V ~ 16.5V
Current - Output / Channel: 2.1A
Applications: DC Motors, General Purpose
Rds On (Typ): 1.8Ohm LS, 1.8Ohm HS
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Surface Mount
Package / Case: 32-PowerSMD Module, 23 Leads
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRSM515-084DA2-INF irsm505-084.pdf?fileId=5546d462533600a40153567c05732889
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4.6A 23DIP
Voltage - Load: 200V (Max)
Technology: NMOS
Current - Peak Output: 15A
Current - Output / Channel: 4.6A
Applications: AC Motors
Rds On (Typ): 340mOhm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic, PWM
Mounting Type: Through Hole
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Features: Bootstrap Circuit
Packaging: Bulk
Part Status: Active
Load Type: Inductive, Capacitive, Resistive
Fault Protection: UVLO
Supplier Device Package: 23-DIPA
auf Bestellung 2160 Stücke:
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76+7.96 EUR
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IRSM515-065DA irsm505-065.pdf
IRSM515-065DA
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 2.6A 23DIP
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 400V (Max)
Technology: UMOS
Current - Peak Output: 15A
Current - Output / Channel: 2.6A
Applications: AC Motors
Rds On (Typ): 1Ohm
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 23-DIP Module
Features: Bootstrap Circuit
Packaging: Bulk
auf Bestellung 390 Stücke:
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AnzahlPrivatkunde
52+11.77 EUR
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IRSM515-035PATR IRSD-S-A0000193667-1.pdf?t.download=true&u=5oefqw
IRSM515-035PATR
Hersteller: Infineon Technologies
Description: MICRO MCM
Produkt ist nicht verfügbar
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BAT68E6327 INFNS15410-1.pdf?t.download=true&u=5oefqw
BAT68E6327
Hersteller: Infineon Technologies
Description: BAT68 - RF MIXER AND DETECTOR SC
Power Dissipation (Max): 150 mW
Current - Max: 130 mA
Part Status: Active
Supplier Device Package: PG-SOT23-3-1
Voltage - Peak Reverse (Max): 8V
Resistance @ If, F: 10Ohm @ 5mA, 10kHz
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: Schottky - Single
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Produkt ist nicht verfügbar
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SLB9635TT12FW316NOXUMA1 SLB 9635 TT1.2.pdf
SLB9635TT12FW316NOXUMA1
Hersteller: Infineon Technologies
Description: SECURITY IC'S/AUTHENTICATION IC'
Packaging: Tape & Reel (TR)
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Interface: LPC
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: 28-TSSOP
Part Status: Not For New Designs
Number of I/O: 2
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TLE5014SATELLITETOBO1 Infineon-TLE5014-Eval_Kit%20and%20SatelliteBoard-v01_00-general_description-GS-v01_00-EN.pdf?fileId=5546d46264fee02f01651a11ee7375dd
Hersteller: Infineon Technologies
Description: EVALUATION BOARD FOR TLE5014
auf Bestellung 3 Stücke:
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