Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (124735) > Seite 517 nach 2079
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| CYT4BB7CEBQ0AESGS | Infineon Technologies |
 Description: IC MCU 32BT 4.0625MB FLSH 144QFPPackaging: Tray Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 100MHz, 250MHz Program Memory Size: 4.0625MB (4.0625M x 8) RAM Size: 768K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH EEPROM Size: 256K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7 Data Converters: A/D 70x12b SAR Core Size: 32-Bit Quad-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 144-TEQFP (20x20) Number of I/O: 116 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CYT4BFCCHDR0BZEGST | Infineon Technologies |
Description: IC MCU 32BIT 8.188MB FLSH 320BGA DigiKey Programmable: Not Verified Number of I/O: 195 Part Status: Active Supplier Device Package: 320-BGA (17x17) Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, Temp Sensor, WDT Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Quad-Core Data Converters: A/D 114x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7 EEPROM Size: 256K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 1M x 8 Program Memory Size: 8.188MB (8.188M x 8) Speed: 100MHz, 350MHz Mounting Type: Surface Mount Package / Case: 320-LFBGA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CYT4BBBCEBR0BZEGST | Infineon Technologies | Description: Auto MCU |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CYT4BB8CEBQ0AEEGS | Infineon Technologies |
Description: IC MCU 32BT 4.0625MB FLSH 176QFP DigiKey Programmable: Not Verified Number of I/O: 148 Supplier Device Package: 176-TEQFP (24x24) Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Quad-Core Data Converters: A/D 82x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7 EEPROM Size: 256K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 768K x 8 Program Memory Size: 4.0625MB (4.0625M x 8) Speed: 100MHz, 250MHz Mounting Type: Surface Mount Package / Case: 176-LQFP Exposed Pad Packaging: Tray |
auf Bestellung 1353 Stücke: Lieferzeit 10-14 Tag (e) |
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| CYT4BB7CEBQ0AESGST | Infineon Technologies |
Description: IC MCU 32BT 4.0625MB FLSH 144QFP DigiKey Programmable: Not Verified Number of I/O: 116 Supplier Device Package: 144-TEQFP (20x20) Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Quad-Core Data Converters: A/D 70x12b SAR Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7 EEPROM Size: 256K x 8 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 768K x 8 Program Memory Size: 4.0625MB (4.0625M x 8) Speed: 100MHz, 250MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 550 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CY8C20396-24LQXI | Infineon Technologies |
Description: IC CAPSENSE 19 I/O 16K 24QFN DigiKey Programmable: Not Verified Package / Case: 24-UFQFN Exposed Pad Packaging: Tray Number of I/O: 19 Part Status: Obsolete Supplier Device Package: 24-QFN (4x4) Core Processor: M8C Applications: Capacitive Sensing Program Memory Type: FLASH (16kB) Controller Series: CY8C20xx6 Voltage - Supply: 1.71V ~ 5.5V Operating Temperature: -40°C ~ 85°C RAM Size: 2K x 8 Interface: I2C, SPI, USB Mounting Type: Surface Mount |
auf Bestellung 106 Stücke: Lieferzeit 10-14 Tag (e) |
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| CY8C4147AZQ-S455 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64TQFP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 320 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CYUSB2405A2-24FNXIT | Infineon Technologies |
Description: eRT2 Packaging: Tape & Reel (TR) Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CYUSB2402A2-24FNXIT | Infineon Technologies |
Description: eRT2 Packaging: Tape & Reel (TR) Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CY9BF121MBGL-GK9E1 | Infineon Technologies |
Description: IC MCU 32BIT 96KB FLASH 96FBGA Packaging: Tray Package / Case: 96-LFBGA Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 96KB (96K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 26x12b; D/A 2x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 96-FBGA (6x6) Part Status: Active Number of I/O: 65 DigiKey Programmable: Not Verified |
auf Bestellung 4836 Stücke: Lieferzeit 10-14 Tag (e) |
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CY9BF121LPMC-G-MNE2 | Infineon Technologies |
Description: IC MCU 32BIT 96KB FLASH 64LQFP Number of I/O: 50 Part Status: Discontinued at Digi-Key Supplier Device Package: 64-LQFP (12x12) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, I²C, LINbus, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 23x12b; D/A 2x10b Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 96KB (96K x 8) Speed: 72MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tray |
Produkt ist nicht verfügbar |
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| BGR420H6327 | Infineon Technologies |
Description: BIASED LOW NOISE RF TRANSISTOR Supplier Device Package: PG-SOT343-4-1 Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz Voltage - Collector Emitter Breakdown (Max): 13V Current - Collector (Ic) (Max): 25mA Power - Max: 120mW Gain: 26dB Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Packaging: Bulk Part Status: Active |
auf Bestellung 222000 Stücke: Lieferzeit 10-14 Tag (e) |
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FM0-64L-S6E1C3 | Infineon Technologies |
Description: S6E1C3 EVAL BRD Utilized IC / Part: S6E1C3 Core Processor: ARM® Cortex®-M0+ Contents: Board(s), Cable(s) Type: MCU 32-Bit Mounting Type: Fixed Packaging: Bulk |
Produkt ist nicht verfügbar |
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MB39C022NPN-G-ERE1 | Infineon Technologies |
Description: IC REG DL BUCK/LINEAR SYNC 10SON Number of Outputs: 2 w/Sequencer: No w/Supervisor: No w/LED Driver: No Voltage/Current - Output 2: 1.2V, 300mA Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA Supplier Device Package: 10-SON (3x3) Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1) Frequency - Switching: 2MHz Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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MB39C022NPN-G-ERE1 | Infineon Technologies |
Description: IC REG DL BUCK/LINEAR SYNC 10SON Number of Outputs: 2 w/Sequencer: No w/Supervisor: No w/LED Driver: No Voltage/Current - Output 2: 1.2V, 300mA Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA Supplier Device Package: 10-SON (3x3) Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1) Frequency - Switching: 2MHz Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 69 Stücke: Lieferzeit 10-14 Tag (e) |
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CYBT-423028-EVAL | Infineon Technologies |
Description: MODULE KIT Utilized IC / Part: CYBT-423028-02 Contents: Board(s) Part Status: Active Supplied Contents: Board(s) Type: Transceiver; Bluetooth® 5.x (BLE) Frequency: 2.4GHz For Use With/Related Products: CYBT-423028-02 Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| BGM7MHLL4L12E6327XTSA1 | Infineon Technologies |
Description: IC RF AMP MMIC 12ATSLP Packaging: Bulk |
auf Bestellung 112500 Stücke: Lieferzeit 10-14 Tag (e) |
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FM25C160B-G | Infineon Technologies |
Description: IC FRAM 16KBIT SPI 20MHZ 8SOIC DigiKey Programmable: Not Verified Memory Organization: 2K x 8 Memory Interface: SPI Part Status: Active Supplier Device Package: 8-SOIC Memory Format: FRAM Clock Frequency: 20 MHz Technology: FRAM (Ferroelectric RAM) Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 16Kbit Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
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IM393S6E3XKLA1 | Infineon Technologies |
Description: POWER MODULE 600V 6A MDIP30 Packaging: Tube Voltage: 600 V Current: 6 A Part Status: Obsolete Voltage - Isolation: 2000Vrms Configuration: 3 Phase Inverter Type: IGBT Mounting Type: Through Hole Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY9AF116MPMC-GNE1 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 80LQFP Core Size: 32-Bit Single-Core Data Converters: A/D 12x12b SAR Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 32K x 8 Program Memory Size: 512KB (512K x 8) Speed: 40MHz Mounting Type: Surface Mount Package / Case: 80-LQFP Packaging: Tray Number of I/O: 66 Part Status: Active Supplier Device Package: 80-LQFP (12x12) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1190 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S29GL128S10DHI010 | Infineon Technologies |
Description: IC FLASH 128MBIT PARALLEL 64FBGA Memory Organization: 8M x 16 Access Time: 100 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Part Status: Active Supplier Device Package: 64-FBGA (9x9) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 128Mbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Tray DigiKey Programmable: Not Verified |
auf Bestellung 1300 Stücke: Lieferzeit 10-14 Tag (e) |
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| BSM10GP60BOSA1 | Infineon Technologies |
Description: BSM10GP60 - IGBT MODULE 600V 20A Part Status: Active Packaging: Bulk |
auf Bestellung 96 Stücke: Lieferzeit 10-14 Tag (e) |
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| CYPD7299-68LDXST | Infineon Technologies |
Description: CCG7D DigiKey Programmable: Not Verified Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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IKQ120N120CS7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 216A TO247 Switching Energy: 10.3mJ (on), 5.72mJ (off) Td (on/off) @ 25°C: 44ns/205ns Power - Max: 1004 W Current - Collector Pulsed (Icm): 360 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 216 A Gate Charge: 710 nC IGBT Type: Trench Field Stop Supplier Device Package: PG-TO247-3-46 Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A Reverse Recovery Time (trr): 205 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Part Status: Active Packaging: Tube |
auf Bestellung 278 Stücke: Lieferzeit 10-14 Tag (e) |
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IGQ120N120S7XKSA1 | Infineon Technologies |
Description: IGBT Packaging: Tube Part Status: Active Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A Supplier Device Package: PG-TO247-3-U01 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/215ns Switching Energy: 10.3mJ (on), 5.72mJ (off) Test Condition: 600V, 120A, 1.3Ohm, 15V Gate Charge: 710 nC Current - Collector (Ic) (Max): 216 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 360 A Power - Max: 1000 W |
auf Bestellung 181 Stücke: Lieferzeit 10-14 Tag (e) |
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BTS70082EPZXUMA1 | Infineon Technologies |
Description: PROFET PG-TSDSO-14 Packaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 175°C (TJ) Output Configuration: High Side Rds On (Typ): 9mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 7.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-14-11 Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 3144 Stücke: Lieferzeit 10-14 Tag (e) |
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BSZ0804LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 11A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8 FL Vgs(th) (Max) @ Id: 2.3V @ 36µA Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) |
Produkt ist nicht verfügbar |
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BSZ0804LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 11A/40A TSDSON Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8 FL Vgs(th) (Max) @ Id: 2.3V @ 36µA Power Dissipation (Max): 2.1W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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ISZ0804NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 11A/58A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 28µA Supplier Device Package: PG-TSDSON-8-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ISZ0804NLSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 11A/58A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 28µA Supplier Device Package: PG-TSDSON-8-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V |
Produkt ist nicht verfügbar |
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BSZ088N03MSG | Infineon Technologies |
Description: BSZ088N03 - 12V-300V N-CHANNEL P Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TSDSON-8 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta), 35W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk |
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BSZ0803LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 9A/40A TSDSON Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8 FL Vgs(th) (Max) @ Id: 2.3V @ 23µA Power Dissipation (Max): 2.1W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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BSZ0803LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 9A/40A TSDSON Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Not For New Designs Supplier Device Package: PG-TDSON-8 FL Vgs(th) (Max) @ Id: 2.3V @ 23µA Power Dissipation (Max): 2.1W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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S6SBP202A1FVA1001 | Infineon Technologies |
Description: EVAL BOARD FOR S6BP202A Part Status: Active Outputs and Type: 1 Non-Isolated Output Main Purpose: DC/DC, Step Up or Down Supplied Contents: Board(s) Utilized IC / Part: S6BP202A Board Type: Fully Populated Regulator Topology: Buck-Boost Current - Output: 2.4A Voltage - Input: 2.5V ~ 42V Voltage - Output: 5V Packaging: Box Contents: Board(s) |
Produkt ist nicht verfügbar |
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IRFSL3206PBF | Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V |
auf Bestellung 971 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R048M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263- Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 6mA Power Dissipation (Max): 183W (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IMBG65R048M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263- Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 6mA Power Dissipation (Max): 183W (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
auf Bestellung 938 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R057M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263- Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 5mA Power Dissipation (Max): 161W (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IMBG65R057M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263- Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 5mA Power Dissipation (Max): 161W (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
auf Bestellung 991 Stücke: Lieferzeit 10-14 Tag (e) |
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IMBG65R083M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263- Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 3.3mA Power Dissipation (Max): 126W (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IMBG65R083M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263- Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 3.3mA Power Dissipation (Max): 126W (Tc) Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V Current - Continuous Drain (Id) @ 25°C: 28A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IMBG65R107M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263- Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 2.6mA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IMBG65R107M1HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET PG-TO263- Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -5V Drive Voltage (Max Rds On, Min Rds On): 18V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 2.6mA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
auf Bestellung 784 Stücke: Lieferzeit 10-14 Tag (e) |
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| TZ740N22KS01HPSA3 | Infineon Technologies |
Description: MOODULE Current - On State (It (RMS)) (Max): 1500 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 819 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 500 mA Structure: Single Operating Temperature: 125°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Voltage - Off State: 2.2 kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TLE9261BQXXUMA2 | Infineon Technologies |
Description: OPTIREG SYST BASIS CHIPS Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 28V Applications: System Basis Chip Current - Supply: 3.5mA Supplier Device Package: PG-VQFN-48-79 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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CY8C4013LQI-411T | Infineon Technologies |
Description: IC MCU 32BIT 8KB FLASH 16QFN DigiKey Programmable: Not Verified Number of I/O: 12 Part Status: Active Supplier Device Package: 16-QFN (3x3) Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: I2C Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: D/A 1x7b, 1x8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 Program Memory Size: 8KB (8K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 16-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C4013LQI-411T | Infineon Technologies |
Description: IC MCU 32BIT 8KB FLASH 16QFN DigiKey Programmable: Not Verified Number of I/O: 12 Part Status: Active Supplier Device Package: 16-QFN (3x3) Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Connectivity: I2C Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: D/A 1x7b, 1x8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 Program Memory Size: 8KB (8K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 16-UFQFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 7158 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C3244LTI-130 | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 68QFN Number of I/O: 38 Part Status: Active Supplier Device Package: 68-QFN (8x8) Peripherals: CapSense, DMA, POR, PWM, WDT Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 16x12b; D/A 1x8b Core Processor: 8051 EEPROM Size: 512 x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 2K x 8 Program Memory Size: 16KB (16K x 8) Speed: 50MHz Mounting Type: Surface Mount Package / Case: 68-VFQFN Exposed Pad Packaging: Tray DigiKey Programmable: Not Verified |
auf Bestellung 2519 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C3245AXI-158 | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 100TQFP RAM Size: 4K x 8 Program Memory Size: 32KB (32K x 8) Speed: 50MHz Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray Number of I/O: 62 Supplier Device Package: 100-TQFP (14x14) Peripherals: CapSense, DMA, POR, PWM, WDT Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 16x12b; D/A 1x8b Core Processor: 8051 EEPROM Size: 1K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) DigiKey Programmable: Not Verified |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C3445LTI-078 | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 48QFN Number of I/O: 25 Part Status: Active Supplier Device Package: 48-QFN (7x7) DigiKey Programmable: Not Verified Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 16x12b; D/A 2x8b Core Processor: 8051 EEPROM Size: 1K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 4K x 8 Program Memory Size: 32KB (32K x 8) Speed: 50MHz Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPD079N06L3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 50A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 34µA Supplier Device Package: PG-TO252-3-311 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V |
auf Bestellung 8062 Stücke: Lieferzeit 10-14 Tag (e) |
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IDW30E60AFKSA1 | Infineon Technologies |
Description: DIODE GEN PURP 600V 60A TO247-3 Packaging: Bulk Current - Reverse Leakage @ Vr: 40 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: PG-TO247-3 Current - Average Rectified (Io): 60A Technology: Standard Reverse Recovery Time (trr): 143 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IDW30E65D1 | Infineon Technologies |
Description: DIODE GP 650V 60A TO247-3-1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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S6J336CHSBSV20000 | Infineon Technologies |
Description: IC MCU 32BIT 112KB FLASH 144LQFP Packaging: Tray Package / Case: 144-LQFP Mounting Type: Surface Mount Speed: 132MHz Program Memory Size: 112KB (112K x 8) RAM Size: 128K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: Arm® Cortex®-R5F Data Converters: A/D 40x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 144-LQFP (20x20) Part Status: Active Number of I/O: 94 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SAF-XE160FU-8F66RAAFXUMA1 | Infineon Technologies |
Description: 16-BIT FLASH RISC MCU |
auf Bestellung 4797 Stücke: Lieferzeit 10-14 Tag (e) |
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IPF042N10NF2SATMA1 | Infineon Technologies |
Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc) Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 93µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IPF042N10NF2SATMA1 | Infineon Technologies |
Description: MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc) Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 93µA Supplier Device Package: PG-TO263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V |
auf Bestellung 141 Stücke: Lieferzeit 10-14 Tag (e) |
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CYW20820A1KFBG | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 62FBGA DigiKey Programmable: Not Verified Part Status: Active Serial Interfaces: ADC, GPIO, I2C, I2S, PCM, SPI, UART RF Family/Standard: Bluetooth GPIO: 22 Supplier Device Package: 62-FBGA (4.5x4.5) Current - Transmitting: 18.58mA ~ 22.48mA Data Rate (Max): 3Mbps Current - Receiving: 6.28mA ~ 6.87mA Protocol: Bluetooth v5.2 + EDR Power - Output: 11.5dBm Voltage - Supply: 1.71V ~ 3.3V Operating Temperature: -30°C ~ 85°C Type: TxRx + MCU Memory Size: 256kB Flash, 176kB RAM, 1MB ROM Sensitivity: -94.5dBm Package / Case: 62-WFBGA Packaging: Tray Frequency: 2.4GHz Mounting Type: Surface Mount |
auf Bestellung 4377 Stücke: Lieferzeit 10-14 Tag (e) |
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D4810N24TVFXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 2.4KV 4810A Current - Average Rectified (Io): 4810A Technology: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: DO-200AE Packaging: Bulk Current - Reverse Leakage @ Vr: 200 mA @ 2400 V Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A Voltage - DC Reverse (Vr) (Max): 2400 V Part Status: Obsolete Operating Temperature - Junction: -40°C ~ 150°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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IRFU3607TRL701P | Infineon Technologies |
Description: MOSFET N CH 75V 56A IPAK Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: IPAK (TO-251AA) Vgs(th) (Max) @ Id: 4V @ 100µA Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V Current - Continuous Drain (Id) @ 25°C: 56A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CYT4BB7CEBQ0AESGS |
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Hersteller: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 70x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 4.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
Data Converters: A/D 70x12b SAR
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CYT4BFCCHDR0BZEGST |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8.188MB FLSH 320BGA
DigiKey Programmable: Not Verified
Number of I/O: 195
Part Status: Active
Supplier Device Package: 320-BGA (17x17)
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, Temp Sensor, WDT
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Quad-Core
Data Converters: A/D 114x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 1M x 8
Program Memory Size: 8.188MB (8.188M x 8)
Speed: 100MHz, 350MHz
Mounting Type: Surface Mount
Package / Case: 320-LFBGA
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 8.188MB FLSH 320BGA
DigiKey Programmable: Not Verified
Number of I/O: 195
Part Status: Active
Supplier Device Package: 320-BGA (17x17)
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, Temp Sensor, WDT
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Quad-Core
Data Converters: A/D 114x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 1M x 8
Program Memory Size: 8.188MB (8.188M x 8)
Speed: 100MHz, 350MHz
Mounting Type: Surface Mount
Package / Case: 320-LFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| CYT4BBBCEBR0BZEGST |
Hersteller: Infineon Technologies
Description: Auto MCU
Description: Auto MCU
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| CYT4BB8CEBQ0AEEGS |
|
Hersteller: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 176QFP
DigiKey Programmable: Not Verified
Number of I/O: 148
Supplier Device Package: 176-TEQFP (24x24)
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Quad-Core
Data Converters: A/D 82x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Tray
Description: IC MCU 32BT 4.0625MB FLSH 176QFP
DigiKey Programmable: Not Verified
Number of I/O: 148
Supplier Device Package: 176-TEQFP (24x24)
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Quad-Core
Data Converters: A/D 82x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Tray
auf Bestellung 1353 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 38.39 EUR |
| 10+ | 30.84 EUR |
| 40+ | 28.17 EUR |
| 120+ | 27.19 EUR |
| CYT4BB7CEBQ0AESGST |
|
Hersteller: Infineon Technologies
Description: IC MCU 32BT 4.0625MB FLSH 144QFP
DigiKey Programmable: Not Verified
Number of I/O: 116
Supplier Device Package: 144-TEQFP (20x20)
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Quad-Core
Data Converters: A/D 70x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 32BT 4.0625MB FLSH 144QFP
DigiKey Programmable: Not Verified
Number of I/O: 116
Supplier Device Package: 144-TEQFP (20x20)
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Quad-Core
Data Converters: A/D 70x12b SAR
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
EEPROM Size: 256K x 8
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 768K x 8
Program Memory Size: 4.0625MB (4.0625M x 8)
Speed: 100MHz, 250MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| CY8C20396-24LQXI |
Hersteller: Infineon Technologies
Description: IC CAPSENSE 19 I/O 16K 24QFN
DigiKey Programmable: Not Verified
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
Number of I/O: 19
Part Status: Obsolete
Supplier Device Package: 24-QFN (4x4)
Core Processor: M8C
Applications: Capacitive Sensing
Program Memory Type: FLASH (16kB)
Controller Series: CY8C20xx6
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I2C, SPI, USB
Mounting Type: Surface Mount
Description: IC CAPSENSE 19 I/O 16K 24QFN
DigiKey Programmable: Not Verified
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
Number of I/O: 19
Part Status: Obsolete
Supplier Device Package: 24-QFN (4x4)
Core Processor: M8C
Applications: Capacitive Sensing
Program Memory Type: FLASH (16kB)
Controller Series: CY8C20xx6
Voltage - Supply: 1.71V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I2C, SPI, USB
Mounting Type: Surface Mount
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.82 EUR |
| 10+ | 6.72 EUR |
| 25+ | 6.2 EUR |
| 100+ | 5.63 EUR |
| CY8C4147AZQ-S455 |
|
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Produkt ist nicht verfügbar
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| CYUSB2405A2-24FNXIT |
Hersteller: Infineon Technologies
Description: eRT2
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
Description: eRT2
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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| CYUSB2402A2-24FNXIT |
Hersteller: Infineon Technologies
Description: eRT2
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
Description: eRT2
Packaging: Tape & Reel (TR)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| CY9BF121MBGL-GK9E1 |
|
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Part Status: Active
Number of I/O: 65
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 96KB FLASH 96FBGA
Packaging: Tray
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 26x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 96-FBGA (6x6)
Part Status: Active
Number of I/O: 65
DigiKey Programmable: Not Verified
auf Bestellung 4836 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.91 EUR |
| 10+ | 6 EUR |
| 25+ | 5.52 EUR |
| 100+ | 4.99 EUR |
| 490+ | 4.59 EUR |
| 980+ | 4.46 EUR |
| 1470+ | 4.4 EUR |
| 2940+ | 4.31 EUR |
| CY9BF121LPMC-G-MNE2 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 64LQFP
Number of I/O: 50
Part Status: Discontinued at Digi-Key
Supplier Device Package: 64-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 23x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 96KB (96K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Description: IC MCU 32BIT 96KB FLASH 64LQFP
Number of I/O: 50
Part Status: Discontinued at Digi-Key
Supplier Device Package: 64-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 23x12b; D/A 2x10b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 96KB (96K x 8)
Speed: 72MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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| BGR420H6327 |
|
Hersteller: Infineon Technologies
Description: BIASED LOW NOISE RF TRANSISTOR
Supplier Device Package: PG-SOT343-4-1
Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
Voltage - Collector Emitter Breakdown (Max): 13V
Current - Collector (Ic) (Max): 25mA
Power - Max: 120mW
Gain: 26dB
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Part Status: Active
Description: BIASED LOW NOISE RF TRANSISTOR
Supplier Device Package: PG-SOT343-4-1
Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
Voltage - Collector Emitter Breakdown (Max): 13V
Current - Collector (Ic) (Max): 25mA
Power - Max: 120mW
Gain: 26dB
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Packaging: Bulk
Part Status: Active
auf Bestellung 222000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1598+ | 0.39 EUR |
| FM0-64L-S6E1C3 |
Hersteller: Infineon Technologies
Description: S6E1C3 EVAL BRD
Utilized IC / Part: S6E1C3
Core Processor: ARM® Cortex®-M0+
Contents: Board(s), Cable(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Bulk
Description: S6E1C3 EVAL BRD
Utilized IC / Part: S6E1C3
Core Processor: ARM® Cortex®-M0+
Contents: Board(s), Cable(s)
Type: MCU 32-Bit
Mounting Type: Fixed
Packaging: Bulk
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| MB39C022NPN-G-ERE1 |
|
Hersteller: Infineon Technologies
Description: IC REG DL BUCK/LINEAR SYNC 10SON
Number of Outputs: 2
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 2: 1.2V, 300mA
Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA
Supplier Device Package: 10-SON (3x3)
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Frequency - Switching: 2MHz
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC REG DL BUCK/LINEAR SYNC 10SON
Number of Outputs: 2
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 2: 1.2V, 300mA
Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA
Supplier Device Package: 10-SON (3x3)
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Frequency - Switching: 2MHz
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| MB39C022NPN-G-ERE1 |
|
Hersteller: Infineon Technologies
Description: IC REG DL BUCK/LINEAR SYNC 10SON
Number of Outputs: 2
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 2: 1.2V, 300mA
Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA
Supplier Device Package: 10-SON (3x3)
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Frequency - Switching: 2MHz
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC REG DL BUCK/LINEAR SYNC 10SON
Number of Outputs: 2
w/Sequencer: No
w/Supervisor: No
w/LED Driver: No
Voltage/Current - Output 2: 1.2V, 300mA
Voltage/Current - Output 1: 0.8V ~ 4.5V, 600mA
Supplier Device Package: 10-SON (3x3)
Topology: Step-Down (Buck) Synchronous (1), Linear (LDO) (1)
Frequency - Switching: 2MHz
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.01 EUR |
| 10+ | 4.49 EUR |
| 25+ | 4.24 EUR |
| CYBT-423028-EVAL |
|
Hersteller: Infineon Technologies
Description: MODULE KIT
Utilized IC / Part: CYBT-423028-02
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® 5.x (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBT-423028-02
Packaging: Bulk
Description: MODULE KIT
Utilized IC / Part: CYBT-423028-02
Contents: Board(s)
Part Status: Active
Supplied Contents: Board(s)
Type: Transceiver; Bluetooth® 5.x (BLE)
Frequency: 2.4GHz
For Use With/Related Products: CYBT-423028-02
Packaging: Bulk
Produkt ist nicht verfügbar
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| BGM7MHLL4L12E6327XTSA1 |
|
auf Bestellung 112500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 257+ | 2.45 EUR |
| FM25C160B-G |
|
Hersteller: Infineon Technologies
Description: IC FRAM 16KBIT SPI 20MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: IC FRAM 16KBIT SPI 20MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 2K x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-SOIC
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 16Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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| IM393S6E3XKLA1 |
|
Hersteller: Infineon Technologies
Description: POWER MODULE 600V 6A MDIP30
Packaging: Tube
Voltage: 600 V
Current: 6 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Description: POWER MODULE 600V 6A MDIP30
Packaging: Tube
Voltage: 600 V
Current: 6 A
Part Status: Obsolete
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 35-PowerDIP Module (0.866", 22.00mm), 30 Leads
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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| CY9AF116MPMC-GNE1 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 80LQFP
Core Size: 32-Bit Single-Core
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Number of I/O: 66
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Description: IC MCU 32BIT 512KB FLASH 80LQFP
Core Size: 32-Bit Single-Core
Data Converters: A/D 12x12b SAR
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Packaging: Tray
Number of I/O: 66
Part Status: Active
Supplier Device Package: 80-LQFP (12x12)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Produkt ist nicht verfügbar
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| S29GL128S10DHI010 |
|
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Memory Organization: 8M x 16
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT PARALLEL 64FBGA
Memory Organization: 8M x 16
Access Time: 100 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Part Status: Active
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.89 EUR |
| 10+ | 9.94 EUR |
| 25+ | 9.75 EUR |
| 40+ | 9.67 EUR |
| 80+ | 8.69 EUR |
| 260+ | 8.65 EUR |
| 520+ | 8.12 EUR |
| 1040+ | 7.77 EUR |
| BSM10GP60BOSA1 |
|
Hersteller: Infineon Technologies
Description: BSM10GP60 - IGBT MODULE 600V 20A
Part Status: Active
Packaging: Bulk
Description: BSM10GP60 - IGBT MODULE 600V 20A
Part Status: Active
Packaging: Bulk
auf Bestellung 96 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 136.12 EUR |
| CYPD7299-68LDXST |
Hersteller: Infineon Technologies
Description: CCG7D
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Description: CCG7D
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| IKQ120N120CS7XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 216A TO247
Switching Energy: 10.3mJ (on), 5.72mJ (off)
Td (on/off) @ 25°C: 44ns/205ns
Power - Max: 1004 W
Current - Collector Pulsed (Icm): 360 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 216 A
Gate Charge: 710 nC
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-46
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Reverse Recovery Time (trr): 205 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Part Status: Active
Packaging: Tube
Description: IGBT TRENCH FS 1200V 216A TO247
Switching Energy: 10.3mJ (on), 5.72mJ (off)
Td (on/off) @ 25°C: 44ns/205ns
Power - Max: 1004 W
Current - Collector Pulsed (Icm): 360 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 216 A
Gate Charge: 710 nC
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO247-3-46
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Reverse Recovery Time (trr): 205 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Part Status: Active
Packaging: Tube
auf Bestellung 278 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.19 EUR |
| 30+ | 15.34 EUR |
| 120+ | 13.19 EUR |
| IGQ120N120S7XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT
Packaging: Tube
Part Status: Active
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/215ns
Switching Energy: 10.3mJ (on), 5.72mJ (off)
Test Condition: 600V, 120A, 1.3Ohm, 15V
Gate Charge: 710 nC
Current - Collector (Ic) (Max): 216 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 1000 W
Description: IGBT
Packaging: Tube
Part Status: Active
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
Supplier Device Package: PG-TO247-3-U01
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/215ns
Switching Energy: 10.3mJ (on), 5.72mJ (off)
Test Condition: 600V, 120A, 1.3Ohm, 15V
Gate Charge: 710 nC
Current - Collector (Ic) (Max): 216 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 1000 W
auf Bestellung 181 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.09 EUR |
| 30+ | 14.49 EUR |
| 120+ | 12.39 EUR |
| BTS70082EPZXUMA1 |
|
Hersteller: Infineon Technologies
Description: PROFET PG-TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: PROFET PG-TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: High Side
Rds On (Typ): 9mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-14-11
Fault Protection: Over Current, Over Temperature, Over Voltage, Short Circuit
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3144 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.49 EUR |
| 10+ | 3.32 EUR |
| 25+ | 3.03 EUR |
| 100+ | 2.73 EUR |
| 250+ | 2.57 EUR |
| 500+ | 2.5 EUR |
| BSZ0804LSATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 11A/40A TSDSON
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Description: MOSFET N-CH 100V 11A/40A TSDSON
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ0804LSATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 11A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 11A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISZ0804NLSATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 11A/58A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
Description: MOSFET N-CH 100V 11A/58A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ISZ0804NLSATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 11A/58A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
Description: MOSFET N-CH 100V 11A/58A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Supplier Device Package: PG-TSDSON-8-26
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ088N03MSG |
|
Hersteller: Infineon Technologies
Description: BSZ088N03 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Description: BSZ088N03 - 12V-300V N-CHANNEL P
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TSDSON-8
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ0803LSATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 9A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BSZ0803LSATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 9A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 9A/40A TSDSON
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: PG-TDSON-8 FL
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| S6SBP202A1FVA1001 |
|
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR S6BP202A
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Up or Down
Supplied Contents: Board(s)
Utilized IC / Part: S6BP202A
Board Type: Fully Populated
Regulator Topology: Buck-Boost
Current - Output: 2.4A
Voltage - Input: 2.5V ~ 42V
Voltage - Output: 5V
Packaging: Box
Contents: Board(s)
Description: EVAL BOARD FOR S6BP202A
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Main Purpose: DC/DC, Step Up or Down
Supplied Contents: Board(s)
Utilized IC / Part: S6BP202A
Board Type: Fully Populated
Regulator Topology: Buck-Boost
Current - Output: 2.4A
Voltage - Input: 2.5V ~ 42V
Voltage - Output: 5V
Packaging: Box
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRFSL3206PBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
Description: MOSFET N-CH 60V 120A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
auf Bestellung 971 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.58 EUR |
| 50+ | 3.31 EUR |
| 100+ | 3 EUR |
| 500+ | 2.44 EUR |
| IMBG65R048M1HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Power Dissipation (Max): 183W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Power Dissipation (Max): 183W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IMBG65R048M1HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Power Dissipation (Max): 183W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Power Dissipation (Max): 183W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 938 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.66 EUR |
| 10+ | 12.79 EUR |
| 100+ | 9.65 EUR |
| IMBG65R057M1HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 161W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 161W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IMBG65R057M1HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 161W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 5mA
Power Dissipation (Max): 161W (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 16.7A, 18V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 991 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.28 EUR |
| 10+ | 11.8 EUR |
| 100+ | 8.73 EUR |
| IMBG65R083M1HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IMBG65R083M1HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: SILICON CARBIDE MOSFET PG-TO263-
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 624 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 3.3mA
Power Dissipation (Max): 126W (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 11.2A, 18V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IMBG65R107M1HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IMBG65R107M1HXTMA1 |
|
Hersteller: Infineon Technologies
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SILICON CARBIDE MOSFET PG-TO263-
Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -5V
Drive Voltage (Max Rds On, Min Rds On): 18V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 2.6mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 141mOhm @ 8.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 784 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.53 EUR |
| 10+ | 9.13 EUR |
| 100+ | 6.63 EUR |
| 500+ | 6.32 EUR |
| TZ740N22KS01HPSA3 |
|
Hersteller: Infineon Technologies
Description: MOODULE
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 819 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 500 mA
Structure: Single
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Voltage - Off State: 2.2 kV
Description: MOODULE
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 819 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 30000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 500 mA
Structure: Single
Operating Temperature: 125°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TLE9261BQXXUMA2 |
|
Hersteller: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CY8C4013LQI-411T |
|
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 16QFN
DigiKey Programmable: Not Verified
Number of I/O: 12
Part Status: Active
Supplier Device Package: 16-QFN (3x3)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 8KB (8K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 16-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 8KB FLASH 16QFN
DigiKey Programmable: Not Verified
Number of I/O: 12
Part Status: Active
Supplier Device Package: 16-QFN (3x3)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 8KB (8K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 16-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.25 EUR |
| CY8C4013LQI-411T |
|
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 8KB FLASH 16QFN
DigiKey Programmable: Not Verified
Number of I/O: 12
Part Status: Active
Supplier Device Package: 16-QFN (3x3)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 8KB (8K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 16-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC MCU 32BIT 8KB FLASH 16QFN
DigiKey Programmable: Not Verified
Number of I/O: 12
Part Status: Active
Supplier Device Package: 16-QFN (3x3)
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Connectivity: I2C
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 8KB (8K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 16-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 7158 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.81 EUR |
| 11+ | 2.05 EUR |
| 25+ | 1.86 EUR |
| 100+ | 1.65 EUR |
| 250+ | 1.55 EUR |
| 500+ | 1.49 EUR |
| 1000+ | 1.44 EUR |
| CY8C3244LTI-130 |
|
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 68QFN
Number of I/O: 38
Part Status: Active
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 1x8b
Core Processor: 8051
EEPROM Size: 512 x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB FLASH 68QFN
Number of I/O: 38
Part Status: Active
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 1x8b
Core Processor: 8051
EEPROM Size: 512 x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 2K x 8
Program Memory Size: 16KB (16K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
DigiKey Programmable: Not Verified
auf Bestellung 2519 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.27 EUR |
| 10+ | 14.97 EUR |
| 25+ | 13.89 EUR |
| 100+ | 12.71 EUR |
| 260+ | 12.13 EUR |
| 520+ | 11.79 EUR |
| 1040+ | 11.51 EUR |
| CY8C3245AXI-158 |
|
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Number of I/O: 62
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 1x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 32KB FLASH 100TQFP
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Number of I/O: 62
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 1x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
DigiKey Programmable: Not Verified
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.72 EUR |
| 10+ | 16.14 EUR |
| 90+ | 13.8 EUR |
| 180+ | 13.33 EUR |
| 270+ | 13.08 EUR |
| CY8C3445LTI-078 |
|
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48QFN
Number of I/O: 25
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
DigiKey Programmable: Not Verified
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 2x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Description: IC MCU 8BIT 32KB FLASH 48QFN
Number of I/O: 25
Part Status: Active
Supplier Device Package: 48-QFN (7x7)
DigiKey Programmable: Not Verified
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 2x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPD079N06L3GATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
Description: MOSFET N-CH 60V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 50A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 34µA
Supplier Device Package: PG-TO252-3-311
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 30 V
auf Bestellung 8062 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.89 EUR |
| 10+ | 2.49 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.23 EUR |
| IDW30E60AFKSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 600V 60A TO247-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 143 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Description: DIODE GEN PURP 600V 60A TO247-3
Packaging: Bulk
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io): 60A
Technology: Standard
Reverse Recovery Time (trr): 143 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Produkt ist nicht verfügbar
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| IDW30E65D1 |
|
Hersteller: Infineon Technologies
Description: DIODE GP 650V 60A TO247-3-1
Description: DIODE GP 650V 60A TO247-3-1
Produkt ist nicht verfügbar
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| S6J336CHSBSV20000 |
|
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 112KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 132MHz
Program Memory Size: 112KB (112K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 94
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 112KB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 132MHz
Program Memory Size: 112KB (112K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 94
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
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| SAF-XE160FU-8F66RAAFXUMA1 |
|
Hersteller: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
Description: 16-BIT FLASH RISC MCU
auf Bestellung 4797 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 130+ | 4.56 EUR |
| IPF042N10NF2SATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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| IPF042N10NF2SATMA1 |
|
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 139A (Tc)
Rds On (Max) @ Id, Vgs: 4.25mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 93µA
Supplier Device Package: PG-TO263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 50 V
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.69 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.06 EUR |
| CYW20820A1KFBG |
|
Hersteller: Infineon Technologies
Description: IC RF TXRX+MCU BLE 62FBGA
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: ADC, GPIO, I2C, I2S, PCM, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 22
Supplier Device Package: 62-FBGA (4.5x4.5)
Current - Transmitting: 18.58mA ~ 22.48mA
Data Rate (Max): 3Mbps
Current - Receiving: 6.28mA ~ 6.87mA
Protocol: Bluetooth v5.2 + EDR
Power - Output: 11.5dBm
Voltage - Supply: 1.71V ~ 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Memory Size: 256kB Flash, 176kB RAM, 1MB ROM
Sensitivity: -94.5dBm
Package / Case: 62-WFBGA
Packaging: Tray
Frequency: 2.4GHz
Mounting Type: Surface Mount
Description: IC RF TXRX+MCU BLE 62FBGA
DigiKey Programmable: Not Verified
Part Status: Active
Serial Interfaces: ADC, GPIO, I2C, I2S, PCM, SPI, UART
RF Family/Standard: Bluetooth
GPIO: 22
Supplier Device Package: 62-FBGA (4.5x4.5)
Current - Transmitting: 18.58mA ~ 22.48mA
Data Rate (Max): 3Mbps
Current - Receiving: 6.28mA ~ 6.87mA
Protocol: Bluetooth v5.2 + EDR
Power - Output: 11.5dBm
Voltage - Supply: 1.71V ~ 3.3V
Operating Temperature: -30°C ~ 85°C
Type: TxRx + MCU
Memory Size: 256kB Flash, 176kB RAM, 1MB ROM
Sensitivity: -94.5dBm
Package / Case: 62-WFBGA
Packaging: Tray
Frequency: 2.4GHz
Mounting Type: Surface Mount
auf Bestellung 4377 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.89 EUR |
| 10+ | 8.41 EUR |
| 25+ | 7.65 EUR |
| 80+ | 6.85 EUR |
| 230+ | 6.27 EUR |
| 490+ | 5.91 EUR |
| 980+ | 5.83 EUR |
| D4810N24TVFXPSA1 |
|
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 2.4KV 4810A
Current - Average Rectified (Io): 4810A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Bulk
Current - Reverse Leakage @ Vr: 200 mA @ 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A
Voltage - DC Reverse (Vr) (Max): 2400 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Description: DIODE GEN PURP 2.4KV 4810A
Current - Average Rectified (Io): 4810A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Packaging: Bulk
Current - Reverse Leakage @ Vr: 200 mA @ 2400 V
Voltage - Forward (Vf) (Max) @ If: 1.078 V @ 4000 A
Voltage - DC Reverse (Vr) (Max): 2400 V
Part Status: Obsolete
Operating Temperature - Junction: -40°C ~ 150°C
Produkt ist nicht verfügbar
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| IRFU3607TRL701P |
|
Hersteller: Infineon Technologies
Description: MOSFET N CH 75V 56A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tape & Reel (TR)
Description: MOSFET N CH 75V 56A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: IPAK (TO-251AA)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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