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KTA1A60 LUGUANG ELECTRONIC Category: Triacs
Description: Triac; 600V; 1A; SOT89; Igt: 5mA; Ufmax: 1.6V
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT89
Gate current: 5mA
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.6V
Produkt ist nicht verfügbar
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KTC3875 KTC3875 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA3A354821D88C0D6&compId=KTC3875.pdf?ci_sign=6d10af42bf851c448c955217152c60f0e37d1cf7 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.15W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT23
Current gain: 70...700
Mounting: SMD
Frequency: 80MHz
auf Bestellung 2340 Stücke:
Lieferzeit 14-21 Tag (e)
720+0.1 EUR
1160+0.062 EUR
1290+0.056 EUR
1450+0.049 EUR
Mindestbestellmenge: 720
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KTC3875 KTC3875 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA3A354821D88C0D6&compId=KTC3875.pdf?ci_sign=6d10af42bf851c448c955217152c60f0e37d1cf7 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.15W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT23
Current gain: 70...700
Mounting: SMD
Frequency: 80MHz
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2340 Stücke:
Lieferzeit 7-14 Tag (e)
720+0.1 EUR
1160+0.062 EUR
1290+0.056 EUR
1450+0.049 EUR
3000+0.044 EUR
Mindestbestellmenge: 720
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LGE2005 LUGUANG ELECTRONIC Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 2A; Ifsm: 60A; flat
Case: D3K
Version: flat
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 2A
Max. off-state voltage: 50V
Max. forward impulse current: 60A
Produkt ist nicht verfügbar
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LGE201 LGE201 LUGUANG ELECTRONIC Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 2A; Ifsm: 60A; flat
Case: D3K
Version: flat
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 2A
Max. off-state voltage: 100V
Max. forward impulse current: 60A
auf Bestellung 865 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
676+0.11 EUR
Mindestbestellmenge: 455
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LGE201 LGE201 LUGUANG ELECTRONIC Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 2A; Ifsm: 60A; flat
Case: D3K
Version: flat
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 2A
Max. off-state voltage: 100V
Max. forward impulse current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 865 Stücke:
Lieferzeit 7-14 Tag (e)
455+0.16 EUR
676+0.11 EUR
Mindestbestellmenge: 455
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LGE202 LUGUANG ELECTRONIC Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 2A; Ifsm: 60A; flat
Case: D3K
Version: flat
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 2A
Max. off-state voltage: 200V
Max. forward impulse current: 60A
Produkt ist nicht verfügbar
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LGE204 LUGUANG ELECTRONIC Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 60A; flat
Case: D3K
Version: flat
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 2A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 60A
Produkt ist nicht verfügbar
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LGE206 LUGUANG ELECTRONIC Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 60A; flat
Case: D3K
Version: flat
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 2A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 60A
Produkt ist nicht verfügbar
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LGE208 LUGUANG ELECTRONIC Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 60A; flat
Case: D3K
Version: flat
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 2A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 60A
Produkt ist nicht verfügbar
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LGE210 LUGUANG ELECTRONIC Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 60A
Version: flat
Case: D3K
Electrical mounting: THT
Max. forward voltage: 1.05V
Produkt ist nicht verfügbar
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LGE2300 LGE2300 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB82531EE987B0B074C54BB8BF&compId=LGE2300.pdf?ci_sign=005809a9bad6f5168753778b93aa2c3cc56bb0ca Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 32mΩ
Power dissipation: 1.25W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
auf Bestellung 11259 Stücke:
Lieferzeit 14-21 Tag (e)
1460+0.049 EUR
1620+0.044 EUR
1840+0.039 EUR
3000+0.036 EUR
Mindestbestellmenge: 1460
Im Einkaufswagen  Stück im Wert von  UAH
LGE2300 LGE2300 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB82531EE987B0B074C54BB8BF&compId=LGE2300.pdf?ci_sign=005809a9bad6f5168753778b93aa2c3cc56bb0ca Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 32mΩ
Power dissipation: 1.25W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Anzahl je Verpackung: 20 Stücke
auf Bestellung 11259 Stücke:
Lieferzeit 7-14 Tag (e)
1460+0.049 EUR
1620+0.044 EUR
1840+0.039 EUR
3000+0.036 EUR
Mindestbestellmenge: 1460
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LGE2301 LUGUANG ELECTRONIC LGE2301-LGE SMD P channel transistors
auf Bestellung 5707 Stücke:
Lieferzeit 7-14 Tag (e)
1166+0.061 EUR
1719+0.042 EUR
1819+0.039 EUR
Mindestbestellmenge: 1166
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LGE2302 LGE2302 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBDA19A05D69CA0DC&compId=LGE2302-1.2W.pdf?ci_sign=578201d44831c4f87b5440f89dd6bf01199fb49d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 10nC
auf Bestellung 2350 Stücke:
Lieferzeit 14-21 Tag (e)
1195+0.06 EUR
1425+0.05 EUR
1585+0.045 EUR
Mindestbestellmenge: 1195
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LGE2302 LGE2302 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBDA19A05D69CA0DC&compId=LGE2302-1.2W.pdf?ci_sign=578201d44831c4f87b5440f89dd6bf01199fb49d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 10nC
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2350 Stücke:
Lieferzeit 7-14 Tag (e)
1195+0.06 EUR
1425+0.05 EUR
1585+0.045 EUR
3000+0.04 EUR
12000+0.038 EUR
Mindestbestellmenge: 1195
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LGE2304 LUGUANG ELECTRONIC LGE2304-LGE SMD N channel transistors
auf Bestellung 2170 Stücke:
Lieferzeit 7-14 Tag (e)
1137+0.063 EUR
1713+0.042 EUR
1812+0.039 EUR
Mindestbestellmenge: 1137
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LGE2305 LUGUANG ELECTRONIC LGE2305-LGE SMD P channel transistors
auf Bestellung 5045 Stücke:
Lieferzeit 7-14 Tag (e)
431+0.17 EUR
1405+0.051 EUR
1484+0.048 EUR
Mindestbestellmenge: 431
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LGE2312 LGE2312 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB82531EE988F2B4974F43D8BF&compId=LGE2312.pdf?ci_sign=2ab10d288b67574288214d76005e5b2af17ec41e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 31mΩ
Drain current: 4.9A
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 6010 Stücke:
Lieferzeit 14-21 Tag (e)
600+0.12 EUR
955+0.075 EUR
1055+0.068 EUR
1200+0.06 EUR
3000+0.057 EUR
Mindestbestellmenge: 600
Im Einkaufswagen  Stück im Wert von  UAH
LGE2312 LGE2312 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB82531EE988F2B4974F43D8BF&compId=LGE2312.pdf?ci_sign=2ab10d288b67574288214d76005e5b2af17ec41e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 31mΩ
Drain current: 4.9A
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6010 Stücke:
Lieferzeit 7-14 Tag (e)
600+0.12 EUR
955+0.075 EUR
1055+0.068 EUR
1200+0.06 EUR
3000+0.057 EUR
Mindestbestellmenge: 600
Im Einkaufswagen  Stück im Wert von  UAH
LGE3D06065A LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB590F71E090D00D6&compId=LGE3D06065A.pdf?ci_sign=386dbc874955b46aa1e1873bf088a6c31809136d Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ir: 108uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. load current: 30A
Max. forward impulse current: 35A
Leakage current: 108µA
Kind of package: tube
Produkt ist nicht verfügbar
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LGE3D06065F LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB590E1021B8A80D6&compId=LGE3D06065F.pdf?ci_sign=086220e6f6459f4512031e79e63bd98de2fe33e1 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.72V
Max. load current: 30A
Leakage current: 110µA
Max. forward impulse current: 35A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LGE3D20120A LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB591227F65B440D6&compId=LGE3D20120A.pdf?ci_sign=989cac16f0d5163de5eecbbee8d9ff99aa389899 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 2.2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 50µA
Produkt ist nicht verfügbar
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LGE3D20120D LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59182217E7440D6&compId=LGE3D20120D.pdf?ci_sign=52f6d4745eeb34f8e0f124ed252375234126d85b Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 30µA
Produkt ist nicht verfügbar
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LGE3D20120H LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59140929B7680D6&compId=LGE3D20120H.pdf?ci_sign=fe727f90328e727d55a3978da8145e78d0c5c42c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 130A
Kind of package: tube
Leakage current: 50µA
Max. load current: 100A
Produkt ist nicht verfügbar
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LGE3D40120H LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5916299374040D6&compId=LGE3D40120H.pdf?ci_sign=7d588c5272e93e59f476c2a8f0fc99a1ef4e61b7 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. load current: 240A
Max. forward impulse current: 260A
Kind of package: tube
Leakage current: 46µA
Produkt ist nicht verfügbar
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LGE3M18120Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB4923C6E793580D6&compId=LGE3M18120Q.pdf?ci_sign=7e83c72936c316ad271cc8a523a6e575f09dad6e Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W
Case: TO247-4
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 235nC
On-state resistance: 34mΩ
Drain current: 74A
Pulsed drain current: 220A
Power dissipation: 428W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Kind of package: tube
Produkt ist nicht verfügbar
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LGE3M40120Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB4925CDC62E240D6&compId=LGE3M40120Q.pdf?ci_sign=c3d05075cc59a080e5769347ee8254d749d1c172 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W
Case: TO247-4
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 145nC
On-state resistance: 69mΩ
Power dissipation: 300W
Drain current: 39A
Drain-source voltage: 1.2kV
Pulsed drain current: 117A
Kind of package: tube
Produkt ist nicht verfügbar
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LGEA1117-1.5 LGEA1117-1.5 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Produkt ist nicht verfügbar
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LGEA1117-1.8 LGEA1117-1.8 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Produkt ist nicht verfügbar
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LGEA1117-2.5 LGEA1117-2.5 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.9...10V
Produkt ist nicht verfügbar
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LGEA1117-3.3 LGEA1117-3.3 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 4.75...10V
Tolerance: ±1%
Voltage drop: 1.15V
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
330+0.22 EUR
515+0.14 EUR
625+0.12 EUR
730+0.098 EUR
Mindestbestellmenge: 330
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LGEA1117-5.0 LGEA1117-5.0 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
auf Bestellung 1265 Stücke:
Lieferzeit 14-21 Tag (e)
330+0.22 EUR
515+0.14 EUR
615+0.12 EUR
725+0.099 EUR
1000+0.093 EUR
Mindestbestellmenge: 330
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LGEA1117-ADJ LGEA1117-ADJ LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)
380+0.19 EUR
600+0.12 EUR
715+0.1 EUR
845+0.085 EUR
Mindestbestellmenge: 380
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LGEA1117-3.3 LGEA1117-3.3 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 4.75...10V
Tolerance: ±1%
Voltage drop: 1.15V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 980 Stücke:
Lieferzeit 7-14 Tag (e)
330+0.22 EUR
515+0.14 EUR
625+0.12 EUR
730+0.098 EUR
1000+0.092 EUR
2000+0.083 EUR
Mindestbestellmenge: 330
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LGEA1117-5.0 LGEA1117-5.0 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1265 Stücke:
Lieferzeit 7-14 Tag (e)
330+0.22 EUR
515+0.14 EUR
615+0.12 EUR
725+0.099 EUR
1000+0.093 EUR
2000+0.084 EUR
5000+0.083 EUR
Mindestbestellmenge: 330
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-ADJ LGEA1117-ADJ LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 920 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
600+0.12 EUR
715+0.1 EUR
845+0.085 EUR
1000+0.08 EUR
2000+0.078 EUR
Mindestbestellmenge: 380
Im Einkaufswagen  Stück im Wert von  UAH
LGEGB15N65T2 LGEGB15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Collector-emitter voltage: 650V
Turn-off time: 150ns
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
104+0.69 EUR
117+0.61 EUR
126+0.57 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
LGEGB15N65T2 LGEGB15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Collector-emitter voltage: 650V
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 167 Stücke:
Lieferzeit 7-14 Tag (e)
93+0.77 EUR
104+0.69 EUR
117+0.61 EUR
126+0.57 EUR
400+0.53 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
LGEGF15N65T2 LGEGF15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Collector-emitter voltage: 650V
Turn-off time: 150ns
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
103+0.7 EUR
117+0.62 EUR
125+0.57 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
LGEGF15N65T2 LGEGF15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Collector-emitter voltage: 650V
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 181 Stücke:
Lieferzeit 7-14 Tag (e)
93+0.77 EUR
103+0.7 EUR
117+0.62 EUR
125+0.57 EUR
250+0.54 EUR
1000+0.53 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
LGEGP15N65T2 LGEGP15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Collector-emitter voltage: 650V
Turn-off time: 150ns
auf Bestellung 472 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
103+0.7 EUR
117+0.62 EUR
125+0.57 EUR
250+0.54 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
LGEGP15N65T2 LGEGP15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Collector-emitter voltage: 650V
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 472 Stücke:
Lieferzeit 7-14 Tag (e)
93+0.77 EUR
103+0.7 EUR
117+0.62 EUR
125+0.57 EUR
250+0.54 EUR
1000+0.53 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW100N65FP LGEGW100N65FP LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1FD098F745FFB27240E1&compId=LGEGW100N65FP.pdf?ci_sign=ebce744619685da1f49d64e0d77d4324af015b57 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 500W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 205ns
Turn-off time: 375ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
11+7.06 EUR
12+6.35 EUR
13+5.62 EUR
30+5.22 EUR
120+4.88 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW100N65FP LGEGW100N65FP LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1FD098F745FFB27240E1&compId=LGEGW100N65FP.pdf?ci_sign=ebce744619685da1f49d64e0d77d4324af015b57 Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 500W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 205ns
Turn-off time: 375ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 125 Stücke:
Lieferzeit 7-14 Tag (e)
11+7.06 EUR
12+6.35 EUR
13+5.62 EUR
30+5.22 EUR
120+4.88 EUR
240+4.76 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW15N120TS LGEGW15N120TS LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D57F0E67FC60DF&compId=LGEGW15N120TS.pdf?ci_sign=cf82c5e156c48ba915f2281753427b6727a942f8 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.35 EUR
35+2.1 EUR
39+1.86 EUR
42+1.73 EUR
120+1.62 EUR
240+1.57 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW15N120TS LGEGW15N120TS LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D57F0E67FC60DF&compId=LGEGW15N120TS.pdf?ci_sign=cf82c5e156c48ba915f2281753427b6727a942f8 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 430 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.35 EUR
35+2.1 EUR
39+1.86 EUR
42+1.73 EUR
120+1.62 EUR
240+1.57 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW20N65SEK LGEGW20N65SEK LUGUANG ELECTRONIC LGEGW20N65SEK.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Gate charge: 82nC
Turn-off time: 232ns
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.35 EUR
35+2.1 EUR
39+1.87 EUR
42+1.73 EUR
120+1.62 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW20N65SEK LGEGW20N65SEK LUGUANG ELECTRONIC LGEGW20N65SEK.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Gate charge: 82nC
Turn-off time: 232ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.35 EUR
35+2.1 EUR
39+1.87 EUR
42+1.73 EUR
120+1.62 EUR
240+1.57 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW25N120S LGEGW25N120S LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D585940B18A0DF&compId=LGEGW25N120S.pdf?ci_sign=46757ba5e0f909fc6b49ea5dc379992dcb5afacf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Power dissipation: 100W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 57ns
Turn-off time: 460ns
Collector current: 25A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.83 EUR
29+2.55 EUR
32+2.25 EUR
35+2.09 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW25N120S LGEGW25N120S LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D585940B18A0DF&compId=LGEGW25N120S.pdf?ci_sign=46757ba5e0f909fc6b49ea5dc379992dcb5afacf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Power dissipation: 100W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 57ns
Turn-off time: 460ns
Collector current: 25A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 102 Stücke:
Lieferzeit 7-14 Tag (e)
26+2.83 EUR
29+2.55 EUR
32+2.25 EUR
35+2.09 EUR
120+1.94 EUR
240+1.9 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120F LGEGW40N120F LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D58F04A27BA0DF&compId=LGEGW40N120F.pdf?ci_sign=34bfd58e82610e625b2c324fae182c73a7102b29 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.69 EUR
17+4.22 EUR
20+3.75 EUR
30+3.47 EUR
120+3.25 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120F LGEGW40N120F LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D58F04A27BA0DF&compId=LGEGW40N120F.pdf?ci_sign=34bfd58e82610e625b2c324fae182c73a7102b29 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 130 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.69 EUR
17+4.22 EUR
20+3.75 EUR
30+3.47 EUR
120+3.25 EUR
240+3.17 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120F2 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D59C277ED4E0DF&compId=LGEGW40N120F2.pdf?ci_sign=73a03c89b6ff7695ebfee4df0daac1b77dc8736c Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.69 EUR
17+4.22 EUR
20+3.75 EUR
30+3.47 EUR
120+3.25 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120F2 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D59C277ED4E0DF&compId=LGEGW40N120F2.pdf?ci_sign=73a03c89b6ff7695ebfee4df0daac1b77dc8736c Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 141 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.69 EUR
17+4.22 EUR
20+3.75 EUR
30+3.47 EUR
120+3.25 EUR
240+3.17 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120TS LGEGW40N120TS LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D5A343C32320DF&compId=LGEGW40N120TS.pdf?ci_sign=2515977ba6ffd0ff6662addc9640a15f1d6aaa84 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.69 EUR
17+4.22 EUR
20+3.75 EUR
30+3.47 EUR
120+3.25 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120TS LGEGW40N120TS LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D5A343C32320DF&compId=LGEGW40N120TS.pdf?ci_sign=2515977ba6ffd0ff6662addc9640a15f1d6aaa84 Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 149 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.69 EUR
17+4.22 EUR
20+3.75 EUR
30+3.47 EUR
120+3.25 EUR
240+3.17 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N65F1 LGEGW40N65F1 LUGUANG ELECTRONIC LGEGW40N65F1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.35 EUR
35+2.1 EUR
39+1.87 EUR
42+1.73 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N65F1 LGEGW40N65F1 LUGUANG ELECTRONIC LGEGW40N65F1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.35 EUR
35+2.1 EUR
39+1.87 EUR
42+1.73 EUR
120+1.62 EUR
240+1.57 EUR
Mindestbestellmenge: 31
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LGEGW50N65F1A LGEGW50N65F1A LUGUANG ELECTRONIC LGEGW50N65F1A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.92 EUR
28+2.62 EUR
31+2.32 EUR
34+2.14 EUR
Mindestbestellmenge: 25
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KTA1A60
Hersteller: LUGUANG ELECTRONIC
Category: Triacs
Description: Triac; 600V; 1A; SOT89; Igt: 5mA; Ufmax: 1.6V
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT89
Gate current: 5mA
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.6V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KTC3875 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA3A354821D88C0D6&compId=KTC3875.pdf?ci_sign=6d10af42bf851c448c955217152c60f0e37d1cf7
KTC3875
Hersteller: LUGUANG ELECTRONIC
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.15W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT23
Current gain: 70...700
Mounting: SMD
Frequency: 80MHz
auf Bestellung 2340 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
720+0.1 EUR
1160+0.062 EUR
1290+0.056 EUR
1450+0.049 EUR
Mindestbestellmenge: 720
Im Einkaufswagen  Stück im Wert von  UAH
KTC3875 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEA3A354821D88C0D6&compId=KTC3875.pdf?ci_sign=6d10af42bf851c448c955217152c60f0e37d1cf7
KTC3875
Hersteller: LUGUANG ELECTRONIC
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.15W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT23
Current gain: 70...700
Mounting: SMD
Frequency: 80MHz
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2340 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
720+0.1 EUR
1160+0.062 EUR
1290+0.056 EUR
1450+0.049 EUR
3000+0.044 EUR
Mindestbestellmenge: 720
Im Einkaufswagen  Stück im Wert von  UAH
LGE2005
Hersteller: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 2A; Ifsm: 60A; flat
Case: D3K
Version: flat
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 2A
Max. off-state voltage: 50V
Max. forward impulse current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE201
LGE201
Hersteller: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 2A; Ifsm: 60A; flat
Case: D3K
Version: flat
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 2A
Max. off-state voltage: 100V
Max. forward impulse current: 60A
auf Bestellung 865 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
676+0.11 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
LGE201
LGE201
Hersteller: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 2A; Ifsm: 60A; flat
Case: D3K
Version: flat
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 2A
Max. off-state voltage: 100V
Max. forward impulse current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 865 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
455+0.16 EUR
676+0.11 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
LGE202
Hersteller: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 2A; Ifsm: 60A; flat
Case: D3K
Version: flat
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 2A
Max. off-state voltage: 200V
Max. forward impulse current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE204
Hersteller: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 2A; Ifsm: 60A; flat
Case: D3K
Version: flat
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 2A
Max. off-state voltage: 0.4kV
Max. forward impulse current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE206
Hersteller: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 60A; flat
Case: D3K
Version: flat
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 2A
Max. off-state voltage: 0.6kV
Max. forward impulse current: 60A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE208
Hersteller: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 2A; Ifsm: 60A; flat
Case: D3K
Version: flat
Electrical mounting: THT
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 2A
Max. off-state voltage: 0.8kV
Max. forward impulse current: 60A
Produkt ist nicht verfügbar
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LGE210
Hersteller: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 60A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 60A
Version: flat
Case: D3K
Electrical mounting: THT
Max. forward voltage: 1.05V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE2300 pVersion=0046&contRep=ZT&docId=005056AB82531EE987B0B074C54BB8BF&compId=LGE2300.pdf?ci_sign=005809a9bad6f5168753778b93aa2c3cc56bb0ca
LGE2300
Hersteller: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 32mΩ
Power dissipation: 1.25W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
auf Bestellung 11259 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1460+0.049 EUR
1620+0.044 EUR
1840+0.039 EUR
3000+0.036 EUR
Mindestbestellmenge: 1460
Im Einkaufswagen  Stück im Wert von  UAH
LGE2300 pVersion=0046&contRep=ZT&docId=005056AB82531EE987B0B074C54BB8BF&compId=LGE2300.pdf?ci_sign=005809a9bad6f5168753778b93aa2c3cc56bb0ca
LGE2300
Hersteller: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23
Case: SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 32mΩ
Power dissipation: 1.25W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Anzahl je Verpackung: 20 Stücke
auf Bestellung 11259 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1460+0.049 EUR
1620+0.044 EUR
1840+0.039 EUR
3000+0.036 EUR
Mindestbestellmenge: 1460
Im Einkaufswagen  Stück im Wert von  UAH
LGE2301
Hersteller: LUGUANG ELECTRONIC
LGE2301-LGE SMD P channel transistors
auf Bestellung 5707 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1166+0.061 EUR
1719+0.042 EUR
1819+0.039 EUR
Mindestbestellmenge: 1166
Im Einkaufswagen  Stück im Wert von  UAH
LGE2302 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBDA19A05D69CA0DC&compId=LGE2302-1.2W.pdf?ci_sign=578201d44831c4f87b5440f89dd6bf01199fb49d
LGE2302
Hersteller: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 10nC
auf Bestellung 2350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1195+0.06 EUR
1425+0.05 EUR
1585+0.045 EUR
Mindestbestellmenge: 1195
Im Einkaufswagen  Stück im Wert von  UAH
LGE2302 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBDA19A05D69CA0DC&compId=LGE2302-1.2W.pdf?ci_sign=578201d44831c4f87b5440f89dd6bf01199fb49d
LGE2302
Hersteller: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 10nC
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2350 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1195+0.06 EUR
1425+0.05 EUR
1585+0.045 EUR
3000+0.04 EUR
12000+0.038 EUR
Mindestbestellmenge: 1195
Im Einkaufswagen  Stück im Wert von  UAH
LGE2304
Hersteller: LUGUANG ELECTRONIC
LGE2304-LGE SMD N channel transistors
auf Bestellung 2170 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1137+0.063 EUR
1713+0.042 EUR
1812+0.039 EUR
Mindestbestellmenge: 1137
Im Einkaufswagen  Stück im Wert von  UAH
LGE2305
Hersteller: LUGUANG ELECTRONIC
LGE2305-LGE SMD P channel transistors
auf Bestellung 5045 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
431+0.17 EUR
1405+0.051 EUR
1484+0.048 EUR
Mindestbestellmenge: 431
Im Einkaufswagen  Stück im Wert von  UAH
LGE2312 pVersion=0046&contRep=ZT&docId=005056AB82531EE988F2B4974F43D8BF&compId=LGE2312.pdf?ci_sign=2ab10d288b67574288214d76005e5b2af17ec41e
LGE2312
Hersteller: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 31mΩ
Drain current: 4.9A
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 6010 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
600+0.12 EUR
955+0.075 EUR
1055+0.068 EUR
1200+0.06 EUR
3000+0.057 EUR
Mindestbestellmenge: 600
Im Einkaufswagen  Stück im Wert von  UAH
LGE2312 pVersion=0046&contRep=ZT&docId=005056AB82531EE988F2B4974F43D8BF&compId=LGE2312.pdf?ci_sign=2ab10d288b67574288214d76005e5b2af17ec41e
LGE2312
Hersteller: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Type of transistor: N-MOSFET
On-state resistance: 31mΩ
Drain current: 4.9A
Drain-source voltage: 20V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6010 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
600+0.12 EUR
955+0.075 EUR
1055+0.068 EUR
1200+0.06 EUR
3000+0.057 EUR
Mindestbestellmenge: 600
Im Einkaufswagen  Stück im Wert von  UAH
LGE3D06065A pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB590F71E090D00D6&compId=LGE3D06065A.pdf?ci_sign=386dbc874955b46aa1e1873bf088a6c31809136d
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ir: 108uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Max. load current: 30A
Max. forward impulse current: 35A
Leakage current: 108µA
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3D06065F pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB590E1021B8A80D6&compId=LGE3D06065F.pdf?ci_sign=086220e6f6459f4512031e79e63bd98de2fe33e1
Hersteller: LUGUANG ELECTRONIC
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.72V
Max. load current: 30A
Leakage current: 110µA
Max. forward impulse current: 35A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3D20120A pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB591227F65B440D6&compId=LGE3D20120A.pdf?ci_sign=989cac16f0d5163de5eecbbee8d9ff99aa389899
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 2.2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 50µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3D20120D pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59182217E7440D6&compId=LGE3D20120D.pdf?ci_sign=52f6d4745eeb34f8e0f124ed252375234126d85b
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 30µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3D20120H pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59140929B7680D6&compId=LGE3D20120H.pdf?ci_sign=fe727f90328e727d55a3978da8145e78d0c5c42c
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 130A
Kind of package: tube
Leakage current: 50µA
Max. load current: 100A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3D40120H pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5916299374040D6&compId=LGE3D40120H.pdf?ci_sign=7d588c5272e93e59f476c2a8f0fc99a1ef4e61b7
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. load current: 240A
Max. forward impulse current: 260A
Kind of package: tube
Leakage current: 46µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M18120Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB4923C6E793580D6&compId=LGE3M18120Q.pdf?ci_sign=7e83c72936c316ad271cc8a523a6e575f09dad6e
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W
Case: TO247-4
Mounting: THT
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 235nC
On-state resistance: 34mΩ
Drain current: 74A
Pulsed drain current: 220A
Power dissipation: 428W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M40120Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB4925CDC62E240D6&compId=LGE3M40120Q.pdf?ci_sign=c3d05075cc59a080e5769347ee8254d749d1c172
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W
Case: TO247-4
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 145nC
On-state resistance: 69mΩ
Power dissipation: 300W
Drain current: 39A
Drain-source voltage: 1.2kV
Pulsed drain current: 117A
Kind of package: tube
Produkt ist nicht verfügbar
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LGEA1117-1.5 LGEx1117x_SER.pdf
LGEA1117-1.5
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-1.8 LGEx1117x_SER.pdf
LGEA1117-1.8
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-2.5 LGEx1117x_SER.pdf
LGEA1117-2.5
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.9...10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-3.3 LGEx1117x_SER.pdf
LGEA1117-3.3
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 4.75...10V
Tolerance: ±1%
Voltage drop: 1.15V
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
330+0.22 EUR
515+0.14 EUR
625+0.12 EUR
730+0.098 EUR
Mindestbestellmenge: 330
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-5.0 LGEx1117x_SER.pdf
LGEA1117-5.0
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
auf Bestellung 1265 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
330+0.22 EUR
515+0.14 EUR
615+0.12 EUR
725+0.099 EUR
1000+0.093 EUR
Mindestbestellmenge: 330
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-ADJ LGEx1117x_SER.pdf
LGEA1117-ADJ
Hersteller: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
380+0.19 EUR
600+0.12 EUR
715+0.1 EUR
845+0.085 EUR
Mindestbestellmenge: 380
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-3.3 LGEx1117x_SER.pdf
LGEA1117-3.3
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 4.75...10V
Tolerance: ±1%
Voltage drop: 1.15V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 980 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
330+0.22 EUR
515+0.14 EUR
625+0.12 EUR
730+0.098 EUR
1000+0.092 EUR
2000+0.083 EUR
Mindestbestellmenge: 330
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-5.0 LGEx1117x_SER.pdf
LGEA1117-5.0
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1265 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
330+0.22 EUR
515+0.14 EUR
615+0.12 EUR
725+0.099 EUR
1000+0.093 EUR
2000+0.084 EUR
5000+0.083 EUR
Mindestbestellmenge: 330
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-ADJ LGEx1117x_SER.pdf
LGEA1117-ADJ
Hersteller: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 920 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
380+0.19 EUR
600+0.12 EUR
715+0.1 EUR
845+0.085 EUR
1000+0.08 EUR
2000+0.078 EUR
Mindestbestellmenge: 380
Im Einkaufswagen  Stück im Wert von  UAH
LGEGB15N65T2 LGEGx15N65.pdf
LGEGB15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Collector-emitter voltage: 650V
Turn-off time: 150ns
auf Bestellung 167 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
104+0.69 EUR
117+0.61 EUR
126+0.57 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
LGEGB15N65T2 LGEGx15N65.pdf
LGEGB15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Collector-emitter voltage: 650V
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 167 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
93+0.77 EUR
104+0.69 EUR
117+0.61 EUR
126+0.57 EUR
400+0.53 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
LGEGF15N65T2 LGEGx15N65.pdf
LGEGF15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Collector-emitter voltage: 650V
Turn-off time: 150ns
auf Bestellung 181 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
103+0.7 EUR
117+0.62 EUR
125+0.57 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
LGEGF15N65T2 LGEGx15N65.pdf
LGEGF15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Collector-emitter voltage: 650V
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 181 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
93+0.77 EUR
103+0.7 EUR
117+0.62 EUR
125+0.57 EUR
250+0.54 EUR
1000+0.53 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
LGEGP15N65T2 LGEGx15N65.pdf
LGEGP15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Collector-emitter voltage: 650V
Turn-off time: 150ns
auf Bestellung 472 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
103+0.7 EUR
117+0.62 EUR
125+0.57 EUR
250+0.54 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
LGEGP15N65T2 LGEGx15N65.pdf
LGEGP15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector current: 15A
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Collector-emitter voltage: 650V
Turn-off time: 150ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 472 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
93+0.77 EUR
103+0.7 EUR
117+0.62 EUR
125+0.57 EUR
250+0.54 EUR
1000+0.53 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW100N65FP pVersion=0046&contRep=ZT&docId=005056AB281E1FD098F745FFB27240E1&compId=LGEGW100N65FP.pdf?ci_sign=ebce744619685da1f49d64e0d77d4324af015b57
LGEGW100N65FP
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 500W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 205ns
Turn-off time: 375ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 125 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+7.06 EUR
12+6.35 EUR
13+5.62 EUR
30+5.22 EUR
120+4.88 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW100N65FP pVersion=0046&contRep=ZT&docId=005056AB281E1FD098F745FFB27240E1&compId=LGEGW100N65FP.pdf?ci_sign=ebce744619685da1f49d64e0d77d4324af015b57
LGEGW100N65FP
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 500W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 205ns
Turn-off time: 375ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 125 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+7.06 EUR
12+6.35 EUR
13+5.62 EUR
30+5.22 EUR
120+4.88 EUR
240+4.76 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW15N120TS pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D57F0E67FC60DF&compId=LGEGW15N120TS.pdf?ci_sign=cf82c5e156c48ba915f2281753427b6727a942f8
LGEGW15N120TS
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.35 EUR
35+2.1 EUR
39+1.86 EUR
42+1.73 EUR
120+1.62 EUR
240+1.57 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW15N120TS pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D57F0E67FC60DF&compId=LGEGW15N120TS.pdf?ci_sign=cf82c5e156c48ba915f2281753427b6727a942f8
LGEGW15N120TS
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Mounting: THT
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 430 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
31+2.35 EUR
35+2.1 EUR
39+1.86 EUR
42+1.73 EUR
120+1.62 EUR
240+1.57 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW20N65SEK LGEGW20N65SEK.pdf
LGEGW20N65SEK
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Gate charge: 82nC
Turn-off time: 232ns
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.35 EUR
35+2.1 EUR
39+1.87 EUR
42+1.73 EUR
120+1.62 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW20N65SEK LGEGW20N65SEK.pdf
LGEGW20N65SEK
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Gate charge: 82nC
Turn-off time: 232ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
31+2.35 EUR
35+2.1 EUR
39+1.87 EUR
42+1.73 EUR
120+1.62 EUR
240+1.57 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW25N120S pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D585940B18A0DF&compId=LGEGW25N120S.pdf?ci_sign=46757ba5e0f909fc6b49ea5dc379992dcb5afacf
LGEGW25N120S
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Power dissipation: 100W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 57ns
Turn-off time: 460ns
Collector current: 25A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.83 EUR
29+2.55 EUR
32+2.25 EUR
35+2.09 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW25N120S pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D585940B18A0DF&compId=LGEGW25N120S.pdf?ci_sign=46757ba5e0f909fc6b49ea5dc379992dcb5afacf
LGEGW25N120S
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Power dissipation: 100W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 57ns
Turn-off time: 460ns
Collector current: 25A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 102 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
26+2.83 EUR
29+2.55 EUR
32+2.25 EUR
35+2.09 EUR
120+1.94 EUR
240+1.9 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120F pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D58F04A27BA0DF&compId=LGEGW40N120F.pdf?ci_sign=34bfd58e82610e625b2c324fae182c73a7102b29
LGEGW40N120F
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.69 EUR
17+4.22 EUR
20+3.75 EUR
30+3.47 EUR
120+3.25 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120F pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D58F04A27BA0DF&compId=LGEGW40N120F.pdf?ci_sign=34bfd58e82610e625b2c324fae182c73a7102b29
LGEGW40N120F
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 130 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.69 EUR
17+4.22 EUR
20+3.75 EUR
30+3.47 EUR
120+3.25 EUR
240+3.17 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120F2 pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D59C277ED4E0DF&compId=LGEGW40N120F2.pdf?ci_sign=73a03c89b6ff7695ebfee4df0daac1b77dc8736c
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.69 EUR
17+4.22 EUR
20+3.75 EUR
30+3.47 EUR
120+3.25 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120F2 pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D59C277ED4E0DF&compId=LGEGW40N120F2.pdf?ci_sign=73a03c89b6ff7695ebfee4df0daac1b77dc8736c
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 141 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.69 EUR
17+4.22 EUR
20+3.75 EUR
30+3.47 EUR
120+3.25 EUR
240+3.17 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120TS pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D5A343C32320DF&compId=LGEGW40N120TS.pdf?ci_sign=2515977ba6ffd0ff6662addc9640a15f1d6aaa84
LGEGW40N120TS
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
auf Bestellung 149 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.69 EUR
17+4.22 EUR
20+3.75 EUR
30+3.47 EUR
120+3.25 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120TS pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D5A343C32320DF&compId=LGEGW40N120TS.pdf?ci_sign=2515977ba6ffd0ff6662addc9640a15f1d6aaa84
LGEGW40N120TS
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 149 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.69 EUR
17+4.22 EUR
20+3.75 EUR
30+3.47 EUR
120+3.25 EUR
240+3.17 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N65F1 LGEGW40N65F1.pdf
LGEGW40N65F1
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.35 EUR
35+2.1 EUR
39+1.87 EUR
42+1.73 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N65F1 LGEGW40N65F1.pdf
LGEGW40N65F1
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 69 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
31+2.35 EUR
35+2.1 EUR
39+1.87 EUR
42+1.73 EUR
120+1.62 EUR
240+1.57 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW50N65F1A LGEGW50N65F1A.pdf
LGEGW50N65F1A
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.92 EUR
28+2.62 EUR
31+2.32 EUR
34+2.14 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
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