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LGE2304 LGE2304 LUGUANG ELECTRONIC LGE2304.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6.7nC
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LGE2305 LGE2305 LUGUANG ELECTRONIC LGE2305v2.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.7W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 7.8nC
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LGE2312 LGE2312 LUGUANG ELECTRONIC LGE2312.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Case: SOT23
On-state resistance: 31mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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LGE3D02120F LGE3D02120F LUGUANG ELECTRONIC LGE3D02120F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 24A
Kind of package: reel; tape
Leakage current: 10µA
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LGE3D05120A LUGUANG ELECTRONIC LGE3D05120A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ufmax: 2V
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 55A
Kind of package: tube
Leakage current: 11µA
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LGE3D15065A LUGUANG ELECTRONIC LGE3D15065A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 135A
Leakage current: 10µA
Kind of package: tube
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LGE3D20065A LUGUANG ELECTRONIC LGE3D20065A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; Ir: 250uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 0.25mA
Max. forward voltage: 1.7V
Load current: 20A
Max. load current: 100A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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LGE3D20065D LUGUANG ELECTRONIC LGE3D20065D.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 10uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.65V
Load current: 10A x2
Max. forward impulse current: 160A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
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LGE3D20065H LUGUANG ELECTRONIC LGE3D20065H.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 250uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 0.25mA
Max. forward voltage: 1.7V
Load current: 20A
Max. load current: 100A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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LGE3D20120A LUGUANG ELECTRONIC LGE3D20120A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 2.2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 50µA
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LGE3D20120D LUGUANG ELECTRONIC LGE3D20120D.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 30µA
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LGE3D20120H LUGUANG ELECTRONIC LGE3D20120H.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. load current: 100A
Max. forward impulse current: 130A
Kind of package: tube
Leakage current: 50µA
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LGE3D20170H LUGUANG ELECTRONIC LGE3D20170H.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 20A; TO247-2; Ir: 50uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 50µA
Max. forward voltage: 2.3V
Load current: 20A
Max. load current: 140A
Max. forward impulse current: 190A
Max. off-state voltage: 1.7kV
Semiconductor structure: single diode
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LGE3M1K170B LUGUANG ELECTRONIC LGE3M1K170B.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.5A
Power dissipation: 69W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 21.8nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 6A
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LGE3M20120Q LUGUANG ELECTRONIC LGE3M20120Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 71A
Power dissipation: 428W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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LGE3M45170B LUGUANG ELECTRONIC LGE3M45170B.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 54nC
On-state resistance: 90mΩ
Drain current: 48A
Pulsed drain current: 160A
Power dissipation: 520W
Drain-source voltage: 1.7kV
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LGE3M45170Q LUGUANG ELECTRONIC LGE3M45170Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Kind of channel: enhancement
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 54nC
On-state resistance: 90mΩ
Drain current: 48A
Pulsed drain current: 160A
Power dissipation: 520W
Drain-source voltage: 1.7kV
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LGEA1117-1.5 LGEA1117-1.5 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
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LGEA1117-1.8 LGEA1117-1.8 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
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LGEA1117-2.5 LGEA1117-2.5 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.9...10V
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LGEA1117-3.3 LGEA1117-3.3 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Tolerance: ±1%
Input voltage: 4.75...10V
Operating temperature: 0...125°C
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LGEA1117-5.0 LGEA1117-5.0 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
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LGEA1117-ADJ LGEA1117-ADJ LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
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LGEGB15N65T2 LGEGB15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Collector current: 15A
Collector-emitter voltage: 650V
Gate charge: 45nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 150ns
Gate-emitter voltage: ±20V
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LGEGF15N65T2 LGEGF15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 650V
Gate charge: 45nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 150ns
Gate-emitter voltage: ±20V
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LGEGP15N65T2 LGEGP15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 650V
Gate charge: 45nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 150ns
Gate-emitter voltage: ±20V
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LGEGW100N65FP LGEGW100N65FP LUGUANG ELECTRONIC LGEGW100N65FP.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 500W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Turn-off time: 375ns
Gate charge: 135nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 300A
Turn-on time: 205ns
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LGEGW15N120TS LGEGW15N120TS LUGUANG ELECTRONIC LGEGW15N120TS.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 40W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 50ns
Turn-off time: 245ns
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LGEGW20N65SEK LGEGW20N65SEK LUGUANG ELECTRONIC LGEGW20N65SEK.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 82W
Case: TO247
Gate-emitter voltage: ±30V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 80A
Turn-on time: 74ns
Turn-off time: 232ns
Gate charge: 82nC
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LGEGW25N120S LGEGW25N120S LUGUANG ELECTRONIC LGEGW25N120S.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 100W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 57ns
Turn-off time: 460ns
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LGEGW40N120F LGEGW40N120F LUGUANG ELECTRONIC LGEGW40N120F.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 110W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 134ns
Turn-off time: 503ns
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LGEGW40N120F2 LGEGW40N120F2 LUGUANG ELECTRONIC LGEGW40N120F2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 417W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 135ns
Turn-off time: 270ns
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LGEGW40N120TS LGEGW40N120TS LUGUANG ELECTRONIC LGEGW40N120TS.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 121ns
Turn-off time: 310ns
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LGEGW40N65F1 LGEGW40N65F1 LUGUANG ELECTRONIC LGEGW40N65F1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Mounting: THT
Kind of package: tube
Turn-off time: 187ns
Gate charge: 83nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 120A
Turn-on time: 96ns
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LGEGW50N65F1A LGEGW50N65F1A LUGUANG ELECTRONIC LGEGW50N65F1A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Turn-off time: 268ns
Gate charge: 180nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 150A
Turn-on time: 62ns
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LGEGW50N65SEK LGEGW50N65SEK LUGUANG ELECTRONIC LGEGW50N65SEK.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Mounting: THT
Kind of package: tube
Turn-off time: 331ns
Gate charge: 200nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Turn-on time: 137ns
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LGEGW50N65SEU LGEGW50N65SEU LUGUANG ELECTRONIC LGEGW50N65SEU.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 137ns
Turn-off time: 331ns
Gate charge: 200nC
Features of semiconductor devices: integrated anti-parallel diode
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LGEGW60N65SEU LGEGW60N65SEU LUGUANG ELECTRONIC LGEGW60N65SEU.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 151W
Case: TO247
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Turn-off time: 256ns
Gate charge: 0.21µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 240A
Turn-on time: 123ns
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LGEGW75N65F LGEGW75N65F LUGUANG ELECTRONIC LGEGW75N65F.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 71W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Turn-on time: 161ns
Turn-off time: 274ns
Features of semiconductor devices: integrated anti-parallel diode
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LGEGW75N65FP LGEGW75N65FP LUGUANG ELECTRONIC LGEGW75N65FP.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 500W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 215ns
Turn-off time: 225ns
Features of semiconductor devices: integrated anti-parallel diode
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LGEGW75N65S LGEGW75N65S LUGUANG ELECTRONIC LGEGW75N65S.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 156ns
Turn-off time: 348ns
Features of semiconductor devices: integrated anti-parallel diode
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LGET1117-1.5 LGET1117-1.5 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
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LGET1117-1.8 LGET1117-1.8 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
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LGET1117-3.3 LGET1117-3.3 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Tolerance: ±1%
Input voltage: 4.75...10V
Operating temperature: 0...125°C
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LGET1117-5.0 LGET1117-5.0 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
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LGET1117-ADJ LGET1117-ADJ LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
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LL4148 LL4148 LUGUANG ELECTRONIC LL4448-LL4148.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.3A
Max. forward impulse current: 1A
Kind of package: reel; tape
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LL4150 LL4150 LUGUANG ELECTRONIC LL4150.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.4A; MiniMELF glass; Ifsm: 1A
Mounting: SMD
Max. forward impulse current: 1A
Max. off-state voltage: 50V
Load current: 0.4A
Max. load current: 0.6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: MiniMELF glass
Type of diode: switching
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LL4151 LL4151 LUGUANG ELECTRONIC LL4151.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.3A; MiniMELF glass; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.3A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. load current: 0.4A
Max. forward impulse current: 0.5A
Kind of package: reel; tape
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LL4448 LL4448 LUGUANG ELECTRONIC LL4448-LL4148.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. load current: 0.5A
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M4 M4 LUGUANG ELECTRONIC M1-M7.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
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M6 M6 LUGUANG ELECTRONIC M1-M7.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
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M7 M7 LUGUANG ELECTRONIC M1-M7.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Case: SMAJ
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Load current: 1A
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MB05F MB05F LUGUANG ELECTRONIC MB05F-MB10F.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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MB05S MB05S LUGUANG ELECTRONIC MB05S-MB10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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MB10F MB10F LUGUANG ELECTRONIC MB05F-MB10F.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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MB10M MB10M LUGUANG ELECTRONIC MB2M-MB10M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBM; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBM
Electrical mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
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MB10S MB10S LUGUANG ELECTRONIC MB05S-MB10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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MB2F MB2F LUGUANG ELECTRONIC MB05F-MB10F.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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MB2S MB2S LUGUANG ELECTRONIC MB05S-MB10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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LGE2304 LGE2304.pdf
LGE2304
Hersteller: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6.7nC
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LGE2305 LGE2305v2.pdf
LGE2305
Hersteller: LUGUANG ELECTRONIC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.7W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Power dissipation: 1.7W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 7.8nC
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LGE2312 LGE2312.pdf
LGE2312
Hersteller: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Case: SOT23
On-state resistance: 31mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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LGE3D02120F LGE3D02120F.pdf
LGE3D02120F
Hersteller: LUGUANG ELECTRONIC
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 1.9V
Max. forward impulse current: 24A
Kind of package: reel; tape
Leakage current: 10µA
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LGE3D05120A LGE3D05120A.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220-2; Ufmax: 2V
Type of diode: Schottky rectifying
Case: TO220-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 2V
Max. forward impulse current: 55A
Kind of package: tube
Leakage current: 11µA
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LGE3D15065A LGE3D15065A.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 10uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.7V
Max. forward impulse current: 135A
Leakage current: 10µA
Kind of package: tube
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LGE3D20065A LGE3D20065A.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; Ir: 250uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 0.25mA
Max. forward voltage: 1.7V
Load current: 20A
Max. load current: 100A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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LGE3D20065D LGE3D20065D.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 10uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.65V
Load current: 10A x2
Max. forward impulse current: 160A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
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LGE3D20065H LGE3D20065H.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 250uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 0.25mA
Max. forward voltage: 1.7V
Load current: 20A
Max. load current: 100A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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LGE3D20120A LGE3D20120A.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; Ir: 50uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 2.2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 50µA
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LGE3D20120D LGE3D20120D.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 30µA
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LGE3D20120H LGE3D20120H.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. load current: 100A
Max. forward impulse current: 130A
Kind of package: tube
Leakage current: 50µA
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LGE3D20170H LGE3D20170H.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 20A; TO247-2; Ir: 50uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 50µA
Max. forward voltage: 2.3V
Load current: 20A
Max. load current: 140A
Max. forward impulse current: 190A
Max. off-state voltage: 1.7kV
Semiconductor structure: single diode
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LGE3M1K170B LGE3M1K170B.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.5A; Idm: 6A; 69W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.5A
Power dissipation: 69W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 21.8nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 6A
Produkt ist nicht verfügbar
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LGE3M20120Q LGE3M20120Q.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 71A
Power dissipation: 428W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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LGE3M45170B LGE3M45170B.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 54nC
On-state resistance: 90mΩ
Drain current: 48A
Pulsed drain current: 160A
Power dissipation: 520W
Drain-source voltage: 1.7kV
Produkt ist nicht verfügbar
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LGE3M45170Q LGE3M45170Q.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Kind of channel: enhancement
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 54nC
On-state resistance: 90mΩ
Drain current: 48A
Pulsed drain current: 160A
Power dissipation: 520W
Drain-source voltage: 1.7kV
Produkt ist nicht verfügbar
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LGEA1117-1.5 LGEx1117x_SER.pdf
LGEA1117-1.5
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Produkt ist nicht verfügbar
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LGEA1117-1.8 LGEx1117x_SER.pdf
LGEA1117-1.8
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Produkt ist nicht verfügbar
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LGEA1117-2.5 LGEx1117x_SER.pdf
LGEA1117-2.5
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.9...10V
Produkt ist nicht verfügbar
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LGEA1117-3.3 LGEx1117x_SER.pdf
LGEA1117-3.3
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Tolerance: ±1%
Input voltage: 4.75...10V
Operating temperature: 0...125°C
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LGEA1117-5.0 LGEx1117x_SER.pdf
LGEA1117-5.0
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
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LGEA1117-ADJ LGEx1117x_SER.pdf
LGEA1117-ADJ
Hersteller: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
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LGEGB15N65T2 LGEGx15N65.pdf
LGEGB15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Collector current: 15A
Collector-emitter voltage: 650V
Gate charge: 45nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 150ns
Gate-emitter voltage: ±20V
auf Bestellung 536 Stücke:
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LGEGF15N65T2 LGEGx15N65.pdf
LGEGF15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 650V
Gate charge: 45nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 150ns
Gate-emitter voltage: ±20V
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LGEGP15N65T2 LGEGx15N65.pdf
LGEGP15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Kind of package: tube
Collector current: 15A
Collector-emitter voltage: 650V
Gate charge: 45nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 60A
Turn-on time: 40ns
Turn-off time: 150ns
Gate-emitter voltage: ±20V
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LGEGW100N65FP LGEGW100N65FP.pdf
LGEGW100N65FP
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 100A
Power dissipation: 500W
Case: TO247PLUS
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Turn-off time: 375ns
Gate charge: 135nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 300A
Turn-on time: 205ns
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LGEGW15N120TS LGEGW15N120TS.pdf
LGEGW15N120TS
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 15A
Power dissipation: 40W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 45A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 50ns
Turn-off time: 245ns
auf Bestellung 333 Stücke:
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LGEGW20N65SEK LGEGW20N65SEK.pdf
LGEGW20N65SEK
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 82W
Case: TO247
Gate-emitter voltage: ±30V
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 80A
Turn-on time: 74ns
Turn-off time: 232ns
Gate charge: 82nC
auf Bestellung 130 Stücke:
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LGEGW25N120S LGEGW25N120S.pdf
LGEGW25N120S
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 100W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 57ns
Turn-off time: 460ns
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LGEGW40N120F LGEGW40N120F.pdf
LGEGW40N120F
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 110W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 134ns
Turn-off time: 503ns
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LGEGW40N120F2 LGEGW40N120F2.pdf
LGEGW40N120F2
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 417W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 135ns
Turn-off time: 270ns
auf Bestellung 127 Stücke:
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LGEGW40N120TS LGEGW40N120TS.pdf
LGEGW40N120TS
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 121ns
Turn-off time: 310ns
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LGEGW40N65F1 LGEGW40N65F1.pdf
LGEGW40N65F1
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Mounting: THT
Kind of package: tube
Turn-off time: 187ns
Gate charge: 83nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 120A
Turn-on time: 96ns
auf Bestellung 476 Stücke:
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LGEGW50N65F1A LGEGW50N65F1A.pdf
LGEGW50N65F1A
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Turn-off time: 268ns
Gate charge: 180nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 150A
Turn-on time: 62ns
auf Bestellung 452 Stücke:
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LGEGW50N65SEK LGEGW50N65SEK.pdf
LGEGW50N65SEK
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Mounting: THT
Kind of package: tube
Turn-off time: 331ns
Gate charge: 200nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Turn-on time: 137ns
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LGEGW50N65SEU LGEGW50N65SEU.pdf
LGEGW50N65SEU
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Mounting: THT
Kind of package: tube
Pulsed collector current: 200A
Turn-on time: 137ns
Turn-off time: 331ns
Gate charge: 200nC
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 146 Stücke:
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LGEGW60N65SEU LGEGW60N65SEU.pdf
LGEGW60N65SEU
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 151W
Case: TO247
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Turn-off time: 256ns
Gate charge: 0.21µC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 240A
Turn-on time: 123ns
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LGEGW75N65F LGEGW75N65F.pdf
LGEGW75N65F
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 71W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Turn-on time: 161ns
Turn-off time: 274ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
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LGEGW75N65FP LGEGW75N65FP.pdf
LGEGW75N65FP
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 500W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 215ns
Turn-off time: 225ns
Features of semiconductor devices: integrated anti-parallel diode
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LGEGW75N65S LGEGW75N65S.pdf
LGEGW75N65S
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 250W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 156ns
Turn-off time: 348ns
Features of semiconductor devices: integrated anti-parallel diode
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LGET1117-1.5 LGEx1117x_SER.pdf
LGET1117-1.5
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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LGET1117-1.8 LGEx1117x_SER.pdf
LGET1117-1.8
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Produkt ist nicht verfügbar
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LGET1117-3.3 LGEx1117x_SER.pdf
LGET1117-3.3
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Number of channels: 1
Kind of package: reel; tape
Tolerance: ±1%
Input voltage: 4.75...10V
Operating temperature: 0...125°C
auf Bestellung 1998 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 5 Stücke
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LGET1117-5.0 LGEx1117x_SER.pdf
LGET1117-5.0
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
auf Bestellung 3588 Stücke:
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LGET1117-ADJ LGEx1117x_SER.pdf
LGET1117-ADJ
Hersteller: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
auf Bestellung 2946 Stücke:
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LL4148 LL4448-LL4148.pdf
LL4148
Hersteller: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.3A
Max. forward impulse current: 1A
Kind of package: reel; tape
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LL4150 LL4150.pdf
LL4150
Hersteller: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.4A; MiniMELF glass; Ifsm: 1A
Mounting: SMD
Max. forward impulse current: 1A
Max. off-state voltage: 50V
Load current: 0.4A
Max. load current: 0.6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: MiniMELF glass
Type of diode: switching
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LL4151 LL4151.pdf
LL4151
Hersteller: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.3A; MiniMELF glass; Ifsm: 0.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.3A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. load current: 0.4A
Max. forward impulse current: 0.5A
Kind of package: reel; tape
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LL4448 LL4448-LL4148.pdf
LL4448
Hersteller: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. load current: 0.5A
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M4 M1-M7.pdf
M4
Hersteller: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
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M6 M1-M7.pdf
M6
Hersteller: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
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M7 M1-M7.pdf
M7
Hersteller: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Case: SMAJ
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 30A
Max. forward voltage: 1.1V
Max. off-state voltage: 1kV
Load current: 1A
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MB05F MB05F-MB10F.pdf
MB05F
Hersteller: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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MB05S MB05S-MB10S.pdf
MB05S
Hersteller: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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MB10F MB05F-MB10F.pdf
MB10F
Hersteller: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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MB10M MB2M-MB10M.pdf
MB10M
Hersteller: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBM; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBM
Electrical mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
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MB10S MB05S-MB10S.pdf
MB10S
Hersteller: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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MB2F MB05F-MB10F.pdf
MB2F
Hersteller: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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MB2S MB05S-MB10S.pdf
MB2S
Hersteller: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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