Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (338322) > Seite 1567 nach 5639
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1N4759A | Microchip Technology |
Description: VOLTAGE REGULATORPackaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO041, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 125 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V |
Produkt ist nicht verfügbar |
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1N4759UR-1 | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Bulk Tolerance: ±10% Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 62 V Impedance (Max) (Zzt): 125 Ohms Supplier Device Package: DO-213AB (MELF, LL41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V |
Produkt ist nicht verfügbar |
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| AX500-PQ208I | Microchip Technology |
Description: IC FPGA 115 I/O 208QFP |
auf Bestellung 33 Stücke: Lieferzeit 21-28 Tag (e) |
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| AX500-1PQ208I | Microchip Technology |
Description: IC FPGA 115 I/O 208QFP |
auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
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MNS1N5819UR-1 | Microchip Technology |
Description: DIODE SCHOTTKY 45V 1A DO213AB Packaging: Bulk Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB (MELF, LL41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V Grade: Military Qualification: MIL-PRF-19500/586 |
Produkt ist nicht verfügbar |
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MNS1N5819UR-1/TR | Microchip Technology |
Description: DIODE SCHOTTKY 45V 1A DO213AB Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 70pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB (MELF, LL41) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V Grade: Military Qualification: MIL-PRF-19500/586 |
Produkt ist nicht verfügbar |
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1N5913B/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
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1N5913BUR-1/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-213AB, MELF Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 3.3 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-213AB Part Status: Active Power - Max: 1.25 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 µA @ 1 V |
Produkt ist nicht verfügbar |
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| MSCSM120TAM31T3AG | Microchip Technology |
Description: SIC 6N-CH 1200V 89A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (3-Phase Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM70HM19T3AG | Microchip Technology |
Description: SIC 4N-CH 700V 124A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 365W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Part Status: Active |
auf Bestellung 8 Stücke: Lieferzeit 21-28 Tag (e) |
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| MSCSM120AM08T3AG | Microchip Technology |
Description: PM-MOSFET-SIC-SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.409kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 337A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 12mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM120AM02T6LIAG | Microchip Technology |
Description: PM-MOSFET-SIC-SP6L1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3.75kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 947A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 36mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM120HM50T3AG | Microchip Technology |
Description: PM-MOSFET-SIC-SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 245W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V Vgs(th) (Max) @ Id: 2.7V @ 2mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM120AM16T1AG | Microchip Technology |
Description: PM-MOSFET-SIC-SP1F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 745W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM120AM042T6LIAG | Microchip Technology |
Description: SIC 2N-CH 1200V 495A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.031kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 18mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM70HM038AG | Microchip Technology |
Description: SIC 4N-CH 700V 464A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.277kW (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 464A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 16mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM120HM083AG | Microchip Technology |
Description: PM-MOSFET-SIC-SP6C Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.042kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 251A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM120HM063AG | Microchip Technology |
Description: PM-MOSFET-SIC-SP6C Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 873W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 333A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 12mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM120AM11T3AG | Microchip Technology |
Description: PM-MOSFET-SIC-SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.067kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 254A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM70AM07T3AG | Microchip Technology |
Description: SIC 2N-CH 700V 353A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 988W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Part Status: Active |
auf Bestellung 6 Stücke: Lieferzeit 21-28 Tag (e) |
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| MSCSM70AM10T3AG | Microchip Technology |
Description: SIC 2N-CH 700V 241A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 690W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 241A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Part Status: Active |
auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
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| MSCSM120HM16T3AG | Microchip Technology |
Description: PM-MOSFET-SIC-SP3F Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 745W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 173A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 6mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM70AM19T1AG | Microchip Technology |
Description: SIC 2N-CH 700V 124A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 365W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 124A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 4mA Part Status: Active |
auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
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| MSCSM120AM31T1AG | Microchip Technology |
Description: SIC 2N-CH 1200V 89A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM70AM025T6AG | Microchip Technology |
Description: PM-MOSFET-SIC-SP6C Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.882kW (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 689A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 24mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM70AM025T6LIAG | Microchip Technology |
Description: PM-MOSFET-SIC-SP6L1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.882kW (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 689A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 24mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM120AM03T6LIAG | Microchip Technology |
Description: PM-MOSFET-SIC-SP6L1 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 3.215kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 805A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 30mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM120HM31T3AG | Microchip Technology |
Description: SIC 4N-CH 1200V 89A Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 395W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 3mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM120AM027T6AG | Microchip Technology |
Description: PM-MOSFET-SIC-SP6C Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.97kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 733A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 27mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM70HM05AG | Microchip Technology |
Description: PM-MOSFET-SIC-SP6C Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 966W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 349A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 12mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM70TAM10TPAG | Microchip Technology |
Description: PM-MOSFET-SIC-SP6P Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 674W (Tc) Drain to Source Voltage (Vdss): 700V Current - Continuous Drain (Id) @ 25°C: 238A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V Vgs(th) (Max) @ Id: 2.4V @ 8mA Part Status: Active |
Produkt ist nicht verfügbar |
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| MSCSM120TAM11TPAG | Microchip Technology |
Description: PM-MOSFET-SIC-SP6P Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 1.042kW (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 251A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V Vgs(th) (Max) @ Id: 2.8V @ 9mA Part Status: Active |
Produkt ist nicht verfügbar |
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DSC6083CI2A-307K000T | Microchip Technology |
Description: MEMS OSC XO 307.0000KHZ CMOS SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Type: XO (Standard) Operating Temperature: -40°C ~ 85°C Frequency Stability: ±25ppm Voltage - Supply: 1.71V ~ 3.63V Ratings: AEC-Q100 Current - Supply (Max): 1.3mA (Typ) Height - Seated (Max): 0.035" (0.90mm) Part Status: Obsolete Frequency: 307 kHz Base Resonator: MEMS |
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MIC4685-5.0BR TR | Microchip Technology |
Description: IC REG BUCK 5V 3A SPAK-7 Packaging: Tape & Reel (TR) Package / Case: SPak-7 (7 leads + Tab) Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 3A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 200kHz Voltage - Input (Max): 30V Topology: Buck Supplier Device Package: S-PAK-7 Synchronous Rectifier: No Voltage - Input (Min): 4V Voltage - Output (Min/Fixed): 5V Part Status: Obsolete |
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| CDLL4976 | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Bulk Part Status: Active |
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| MXPLAD15KP130A | Microchip Technology |
Description: TVS DIODE 130VWM 209VC PLAD |
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| MXPLAD15KP130Ae3 | Microchip Technology |
Description: TVS DIODE 130VWM 209VC PLAD |
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| MXLPLAD15KP130Ae3 | Microchip Technology |
Description: TVS DIODE 130VWM 209VC PLAD |
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MPLAD15KP130A/TR | Microchip Technology |
Description: TVS DIODE 130VWM 209VC PLAD Packaging: Tape & Reel (TR) Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 71A Voltage - Reverse Standoff (Typ): 130V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 144V Voltage - Clamping (Max) @ Ipp: 209V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MAPLAD15KP130A | Microchip Technology |
Description: TVS DIODE 130VWM 209VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 71A Voltage - Reverse Standoff (Typ): 130V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 144V Voltage - Clamping (Max) @ Ipp: 209V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MA15KP130Ae3 | Microchip Technology |
Description: TVS DIODE 130VWM 209VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 72A Voltage - Reverse Standoff (Typ): 130V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 144V Voltage - Clamping (Max) @ Ipp: 209V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MAPLAD15KP130Ae3 | Microchip Technology |
Description: TVS DIODE 130VWM 209VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 71A Voltage - Reverse Standoff (Typ): 130V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 144V Voltage - Clamping (Max) @ Ipp: 209V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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| MXLPLAD15KP130A | Microchip Technology |
Description: TVS DIODE 130VWM 209VC PLAD |
Produkt ist nicht verfügbar |
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M15KP130Ae3 | Microchip Technology |
Description: TVS DIODE 130VWM 209VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 72A Voltage - Reverse Standoff (Typ): 130V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 144V Voltage - Clamping (Max) @ Ipp: 209V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MA15KP130A | Microchip Technology |
Description: TVS DIODE 130VWM 209VC DO204AR Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 72A Voltage - Reverse Standoff (Typ): 130V Supplier Device Package: DO-204AR Unidirectional Channels: 1 Voltage - Breakdown (Min): 144V Voltage - Clamping (Max) @ Ipp: 209V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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AT87F52-24PI | Microchip Technology |
Description: IC MCU 8BIT 8KB FLASH 40DIP |
Produkt ist nicht verfügbar |
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| 11AA040-I/S16K | Microchip Technology |
Description: IC EEPROM 4KBIT SGL WIRE DIE Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 100 kHz Memory Format: EEPROM Supplier Device Package: Die Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: Single Wire Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| 11AA040-I/WF16K | Microchip Technology |
Description: IC EEPROM 4KBIT SGL WIRE DIE Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Memory Size: 4Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.8V ~ 5.5V Technology: EEPROM Clock Frequency: 100 kHz Memory Format: EEPROM Supplier Device Package: Die Part Status: Active Write Cycle Time - Word, Page: 5ms Memory Interface: Single Wire Memory Organization: 512 x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| 78160GNP | Microchip Technology |
Description: RF MOSFET Packaging: Bulk |
Produkt ist nicht verfügbar |
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| 78161GNP | Microchip Technology |
Description: RF MOSFET Packaging: Bulk |
Produkt ist nicht verfügbar |
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SAMA7G54-V/4HB | Microchip Technology |
Description: IC MPU SAMA7G5 1GHZ 343TFBGA Packaging: Tray Package / Case: 343-TFBGA Mounting Type: Surface Mount Speed: 1GHz Operating Temperature: -40°C ~ 105°C (TJ) Core Processor: ARM® Cortex®-A7 Voltage - I/O: 3.3V, 5V Supplier Device Package: 343-TFBGA (14x14) Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1) USB: USB 2.0 PHY (3), USB Type-C (2) Number of Cores/Bus Width: 1 Core, 32-Bit Co-Processors/DSP: Multimedia; NEON™ MPE RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3 Graphics Acceleration: No Display & Interface Controllers: LCD Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512 Additional Interfaces: EBI, I2C, SPI Part Status: Active |
auf Bestellung 783 Stücke: Lieferzeit 21-28 Tag (e) |
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| DSA612RI1A-01V0VAO | Microchip Technology |
Description: IC CLOCK GENERATOR 6VFLGA Packaging: Tube Package / Case: 6-VFLGA Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 100MHz Type: Clock Generator Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.71V ~ 3.63V Ratio - Input:Output: 0:2 Differential - Input:Output: No/No Supplier Device Package: 6-VFLGA (2.5x2) PLL: Yes Divider/Multiplier: Yes/No Part Status: Active Number of Circuits: 1 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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JANTX1N4245 | Microchip Technology |
Description: DIODE GEN PURP 200V 1A AXIAL |
Produkt ist nicht verfügbar |
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| JANTX1N3646 | Microchip Technology |
Description: DIODE GP 1.75KV 250MA AXIAL |
Produkt ist nicht verfügbar |
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JANTX1N3612 | Microchip Technology |
Description: DIODE GEN PURP 400V 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
Produkt ist nicht verfügbar |
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JANTXV1N5533D-1 | Microchip Technology |
Description: DIODE ZENER 13V 500MW DO35 |
Produkt ist nicht verfügbar |
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| VCC6-119-178M018970 | Microchip Technology |
Description: DIFFERENTIAL XO +3.3 VDC +/-5% L |
Produkt ist nicht verfügbar |
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JANTXV1N5772 | Microchip Technology |
Description: TVS DIODE 10CFLATPACK Packaging: Bulk Package / Case: 10-CFlatPack Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -65°C ~ 150°C (TJ) Applications: Ethernet Supplier Device Package: 10-CFlatPack Unidirectional Channels: 8 Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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| 1N5772 | Microchip Technology |
Description: TVS DIODE 10CFLATPACK Packaging: Bulk Package / Case: 10-CFlatPack Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -65°C ~ 150°C (TJ) Applications: Ethernet Supplier Device Package: 10-CFlatPack Unidirectional Channels: 8 Power Line Protection: No Part Status: Discontinued at Digi-Key |
Produkt ist nicht verfügbar |
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JANTX1N5772 | Microchip Technology |
Description: TVS DIODE 10CFLATPACK Packaging: Bulk Package / Case: 10-CFlatPack Mounting Type: Surface Mount Type: Steering (Rail to Rail) Operating Temperature: -65°C ~ 150°C (TJ) Applications: Ethernet Supplier Device Package: 10-CFlatPack Unidirectional Channels: 8 Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
| 1N4759A |
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Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO041, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Produkt ist nicht verfügbar
| 1N4759UR-1 |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Description: VOLTAGE REGULATOR
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Produkt ist nicht verfügbar
| AX500-PQ208I |
|
Hersteller: Microchip Technology
Description: IC FPGA 115 I/O 208QFP
Description: IC FPGA 115 I/O 208QFP
auf Bestellung 33 Stücke:
Lieferzeit 21-28 Tag (e)| AX500-1PQ208I |
|
Hersteller: Microchip Technology
Description: IC FPGA 115 I/O 208QFP
Description: IC FPGA 115 I/O 208QFP
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)| MNS1N5819UR-1 |
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
Produkt ist nicht verfügbar
| MNS1N5819UR-1/TR |
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
Produkt ist nicht verfügbar
| 1N5913B/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Produkt ist nicht verfügbar
| 1N5913BUR-1/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Produkt ist nicht verfügbar
| MSCSM120TAM31T3AG |
|
Hersteller: Microchip Technology
Description: SIC 6N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
Description: SIC 6N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM70HM19T3AG |
|
Hersteller: Microchip Technology
Description: SIC 4N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
Description: SIC 4N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 488.8 EUR |
| MSCSM120AM08T3AG |
|
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.409kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.409kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM120AM02T6LIAG |
|
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6L1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 36mA
Part Status: Active
Description: PM-MOSFET-SIC-SP6L1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 36mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM120HM50T3AG |
|
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 245W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Part Status: Active
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 245W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM120AM16T1AG |
|
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP1F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
Description: PM-MOSFET-SIC-SP1F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM120AM042T6LIAG |
|
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 495A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Part Status: Active
Description: SIC 2N-CH 1200V 495A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM70HM038AG |
|
Hersteller: Microchip Technology
Description: SIC 4N-CH 700V 464A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.277kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 16mA
Part Status: Active
Description: SIC 4N-CH 700V 464A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.277kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 16mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM120HM083AG |
|
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM120HM063AG |
|
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 873W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 873W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM120AM11T3AG |
|
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.067kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.067kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM70AM07T3AG |
|
Hersteller: Microchip Technology
Description: SIC 2N-CH 700V 353A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 988W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Part Status: Active
Description: SIC 2N-CH 700V 353A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 988W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 673.43 EUR |
| MSCSM70AM10T3AG |
|
Hersteller: Microchip Technology
Description: SIC 2N-CH 700V 241A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Part Status: Active
Description: SIC 2N-CH 700V 241A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Part Status: Active
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 495.35 EUR |
| MSCSM120HM16T3AG |
|
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM70AM19T1AG |
|
Hersteller: Microchip Technology
Description: SIC 2N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
Description: SIC 2N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 248.87 EUR |
| MSCSM120AM31T1AG |
|
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
Description: SIC 2N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM70AM025T6AG |
|
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.882kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Part Status: Active
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.882kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM70AM025T6LIAG |
|
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6L1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.882kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Part Status: Active
Description: PM-MOSFET-SIC-SP6L1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.882kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM120AM03T6LIAG |
|
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6L1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.215kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 30mA
Part Status: Active
Description: PM-MOSFET-SIC-SP6L1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.215kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 30mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM120HM31T3AG |
|
Hersteller: Microchip Technology
Description: SIC 4N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
Description: SIC 4N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM120AM027T6AG |
|
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Part Status: Active
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM70HM05AG |
|
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 966W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Part Status: Active
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 966W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM70TAM10TPAG |
|
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 674W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Part Status: Active
Description: PM-MOSFET-SIC-SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 674W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Part Status: Active
Produkt ist nicht verfügbar
| MSCSM120TAM11TPAG |
|
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
Description: PM-MOSFET-SIC-SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
Produkt ist nicht verfügbar
| DSC6083CI2A-307K000T |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 307.0000KHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Obsolete
Frequency: 307 kHz
Base Resonator: MEMS
Description: MEMS OSC XO 307.0000KHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Type: XO (Standard)
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±25ppm
Voltage - Supply: 1.71V ~ 3.63V
Ratings: AEC-Q100
Current - Supply (Max): 1.3mA (Typ)
Height - Seated (Max): 0.035" (0.90mm)
Part Status: Obsolete
Frequency: 307 kHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
| MIC4685-5.0BR TR |
|
Hersteller: Microchip Technology
Description: IC REG BUCK 5V 3A SPAK-7
Packaging: Tape & Reel (TR)
Package / Case: SPak-7 (7 leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Voltage - Input (Max): 30V
Topology: Buck
Supplier Device Package: S-PAK-7
Synchronous Rectifier: No
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Description: IC REG BUCK 5V 3A SPAK-7
Packaging: Tape & Reel (TR)
Package / Case: SPak-7 (7 leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Voltage - Input (Max): 30V
Topology: Buck
Supplier Device Package: S-PAK-7
Synchronous Rectifier: No
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Produkt ist nicht verfügbar
| CDLL4976 |
Produkt ist nicht verfügbar
| MXPLAD15KP130A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
Description: TVS DIODE 130VWM 209VC PLAD
Produkt ist nicht verfügbar
| MXPLAD15KP130Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
Description: TVS DIODE 130VWM 209VC PLAD
Produkt ist nicht verfügbar
| MXLPLAD15KP130Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
Description: TVS DIODE 130VWM 209VC PLAD
Produkt ist nicht verfügbar
| MPLAD15KP130A/TR |
|
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MAPLAD15KP130A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MA15KP130Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MAPLAD15KP130Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MXLPLAD15KP130A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
Description: TVS DIODE 130VWM 209VC PLAD
Produkt ist nicht verfügbar
| M15KP130Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| MA15KP130A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
| AT87F52-24PI |
|
Hersteller: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 40DIP
Description: IC MCU 8BIT 8KB FLASH 40DIP
Produkt ist nicht verfügbar
| 11AA040-I/S16K |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT SGL WIRE DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT SGL WIRE DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| 11AA040-I/WF16K |
|
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT SGL WIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 4KBIT SGL WIRE DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 100 kHz
Memory Format: EEPROM
Supplier Device Package: Die
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: Single Wire
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| 78160GNP |
Produkt ist nicht verfügbar
| 78161GNP |
Produkt ist nicht verfügbar
| SAMA7G54-V/4HB |
|
Hersteller: Microchip Technology
Description: IC MPU SAMA7G5 1GHZ 343TFBGA
Packaging: Tray
Package / Case: 343-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 105°C (TJ)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 3.3V, 5V
Supplier Device Package: 343-TFBGA (14x14)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB 2.0 PHY (3), USB Type-C (2)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Display & Interface Controllers: LCD
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
Part Status: Active
Description: IC MPU SAMA7G5 1GHZ 343TFBGA
Packaging: Tray
Package / Case: 343-TFBGA
Mounting Type: Surface Mount
Speed: 1GHz
Operating Temperature: -40°C ~ 105°C (TJ)
Core Processor: ARM® Cortex®-A7
Voltage - I/O: 3.3V, 5V
Supplier Device Package: 343-TFBGA (14x14)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
USB: USB 2.0 PHY (3), USB Type-C (2)
Number of Cores/Bus Width: 1 Core, 32-Bit
Co-Processors/DSP: Multimedia; NEON™ MPE
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Graphics Acceleration: No
Display & Interface Controllers: LCD
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Additional Interfaces: EBI, I2C, SPI
Part Status: Active
auf Bestellung 783 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 32.94 EUR |
| 25+ | 30.2 EUR |
| 100+ | 27.35 EUR |
| DSA612RI1A-01V0VAO |
Hersteller: Microchip Technology
Description: IC CLOCK GENERATOR 6VFLGA
Packaging: Tube
Package / Case: 6-VFLGA
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 100MHz
Type: Clock Generator
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 3.63V
Ratio - Input:Output: 0:2
Differential - Input:Output: No/No
Supplier Device Package: 6-VFLGA (2.5x2)
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GENERATOR 6VFLGA
Packaging: Tube
Package / Case: 6-VFLGA
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 100MHz
Type: Clock Generator
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 3.63V
Ratio - Input:Output: 0:2
Differential - Input:Output: No/No
Supplier Device Package: 6-VFLGA (2.5x2)
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| JANTX1N4245 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL
Description: DIODE GEN PURP 200V 1A AXIAL
Produkt ist nicht verfügbar
| JANTX1N3646 |
|
Hersteller: Microchip Technology
Description: DIODE GP 1.75KV 250MA AXIAL
Description: DIODE GP 1.75KV 250MA AXIAL
Produkt ist nicht verfügbar
| JANTX1N3612 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
| JANTXV1N5533D-1 |
|
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 500MW DO35
Description: DIODE ZENER 13V 500MW DO35
Produkt ist nicht verfügbar
| VCC6-119-178M018970 |
|
Hersteller: Microchip Technology
Description: DIFFERENTIAL XO +3.3 VDC +/-5% L
Description: DIFFERENTIAL XO +3.3 VDC +/-5% L
Produkt ist nicht verfügbar
| JANTXV1N5772 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10CFLATPACK
Packaging: Bulk
Package / Case: 10-CFlatPack
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 10-CFlatPack
Unidirectional Channels: 8
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 10CFLATPACK
Packaging: Bulk
Package / Case: 10-CFlatPack
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 10-CFlatPack
Unidirectional Channels: 8
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
| 1N5772 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 10CFLATPACK
Packaging: Bulk
Package / Case: 10-CFlatPack
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 10-CFlatPack
Unidirectional Channels: 8
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 10CFLATPACK
Packaging: Bulk
Package / Case: 10-CFlatPack
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 10-CFlatPack
Unidirectional Channels: 8
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
| JANTX1N5772 |
Hersteller: Microchip Technology
Description: TVS DIODE 10CFLATPACK
Packaging: Bulk
Package / Case: 10-CFlatPack
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 10-CFlatPack
Unidirectional Channels: 8
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 10CFLATPACK
Packaging: Bulk
Package / Case: 10-CFlatPack
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 10-CFlatPack
Unidirectional Channels: 8
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar