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2N5151L 2N5151L Microchip Technology 8945-lds-0132-datasheet Description: TRANS PNP 80V 2A TO5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
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DSC2311KE2-R0090T Microchip Technology Description: MEMS CLOCK GEN DUAL OUTPUT
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DSC2311KI1-R0051T DSC2311KI1-R0051T Microchip Technology 20005611A.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KL1-R0054 DSC2311KL1-R0054 Microchip Technology DSC2311KL1-R0054.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KI2-R0057T DSC2311KI2-R0057T Microchip Technology DSC2311KI2-R0057.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KI1-R0040 Microchip Technology Description: MEMS CLOCK GEN DUAL OUTPUT
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DSC2311KI1-R0053T DSC2311KI1-R0053T Microchip Technology DSC2311KI1-R0053.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KM1-R0002 DSC2311KM1-R0002 Microchip Technology DSC2311KM1-R0002.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
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DSC2311KI1-R0054 DSC2311KI1-R0054 Microchip Technology DSC2311KI1-R0054.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KL1-R0054T DSC2311KL1-R0054T Microchip Technology DSC2311KL1-R0054.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KI2-R0055T DSC2311KI2-R0055T Microchip Technology DSC2311KI2-R0055.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KI1-R0040T Microchip Technology Description: MEMS CLOCK GEN DUAL OUTPUT
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DSC2311KE2-R0016T DSC2311KE2-R0016T Microchip Technology DSC2311KE2-R0016.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
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DSC2311KI2-R0016 DSC2311KI2-R0016 Microchip Technology DSC2311KI2-R0016.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KL2-R0091T Microchip Technology Description: MEMS CLOCK GEN DUAL OUTPUT
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DSC2311KL2-R0048T DSC2311KL2-R0048T Microchip Technology DSC2311KL2-R0048.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KM2-R0050 DSC2311KM2-R0050 Microchip Technology DSC2311KM2-R0050.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KL1-R0002T DSC2311KL1-R0002T Microchip Technology DSC2311KL1-R0002.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
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DSC2311KE1-R0047 DSC2311KE1-R0047 Microchip Technology DSC2311KE1-R0047.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KI2-R0008T DSC2311KI2-R0008T Microchip Technology DSC2311KI2-R0008.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
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DSC2311KL2-R0048 DSC2311KL2-R0048 Microchip Technology DSC2311KL2-R0048.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KM2-R0002 DSC2311KM2-R0002 Microchip Technology 20005611A.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KL2-R0002T DSC2311KL2-R0002T Microchip Technology DSC2311KL2-R0002.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
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DSC2311KI1-R0054T DSC2311KI1-R0054T Microchip Technology DSC2311KI1-R0054.pdf Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KI1-R0059T DSC2311KI1-R0059T Microchip Technology DSC2311KI1-R0059.pdf Description: MEMS OSC XO 2.25V-3.6V 6SMD
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MSMCJ30A/TR MSMCJ30A/TR Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 30VWM 48.4VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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DSC6001JI1B-460K800 DSC6001JI1B-460K800 Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf Description: MEMS OSC ULP LVCMOS -40C-85C 50P
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DSC6001JI1B-460K800T DSC6001JI1B-460K800T Microchip Technology DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf Description: MEMS OSC ULP LVCMOS -40C-85C 50P
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1N4759AP/TR8 1N4759AP/TR8 Microchip Technology 10911-sa5-33-datasheet Description: DIODE ZENER 62V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
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1N4759AG/TR 1N4759AG/TR Microchip Technology Description: DIODE ZENER 62V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
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1N4759UR-1 1N4759UR-1 Microchip Technology Description: DIODE ZENER 62V 1W DO213AB
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
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AX500-PQ208I Microchip Technology index.php?option=com_docman&task=doc_download&gid=130669 Description: IC FPGA 115 I/O 208QFP
auf Bestellung 33 Stücke:
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AX500-1PQ208I Microchip Technology index.php?option=com_docman&task=doc_download&gid=130669 Description: IC FPGA 115 I/O 208QFP
auf Bestellung 2 Stücke:
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MNS1N5819UR-1 MNS1N5819UR-1 Microchip Technology 131895-lds-0301-1.pdf Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
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MNS1N5819UR-1/TR MNS1N5819UR-1/TR Microchip Technology 131895-lds-0301-1.pdf Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
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1N5913B/TR 1N5913B/TR Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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1N5913BUR-1/TR 1N5913BUR-1/TR Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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MSCSM120TAM31T3AG Microchip Technology MSCSM120TAM31T3AG-SiC-MOSFET-module-DS00004640.pdf Description: SIC 6N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
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MSCSM70HM19T3AG Microchip Technology MSCSM70HM19T3AG-SiC-MOSFET-module-DS00004607.pdf Description: MOSFET 4N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
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1+341.05 EUR
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MSCSM120AM08T3AG Microchip Technology MSCSM120AM08T3AG-SiC-MOSFET-module-DS00004574.pdf Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.409kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
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MSCSM120AM02T6LIAG Microchip Technology MSCSM120AM02T6LIAG-SiC-MOSFET-module-DS00004562.pdf Description: MOSFET 2N-CH 1200V 947A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 36mA
Part Status: Active
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MSCSM120HM50T3AG Microchip Technology MSCSM120HM50T3AG-SiC-MOSFET-module-DS00004645.pdf Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 245W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Part Status: Active
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MSCSM120AM16T1AG Microchip Technology MSCSM120AM16T1AG-SiC-MOSFET-module-DS00004579.pdf Description: SIC 2N-CH 1200V 173A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
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MSCSM120AM042T6LIAG Microchip Technology MSCSM120AM042T6LIAG-SiC-MOSFET-module-DS00004631.pdf Description: MOSFET 2N-CH 1200V 495A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Part Status: Active
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MSCSM70HM038AG Microchip Technology MSCSM70HM038AG-SiC-MOSFET-module-DS00004602.pdf Description: SIC 4N-CH 700V 464A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.277kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 16mA
Part Status: Active
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MSCSM120HM083AG Microchip Technology MSCSM120HM083AG-SiC-MOSFET-module-DS00004648.pdf Description: MOSFET 4N-CH 1200V 251A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
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MSCSM120HM063AG Microchip Technology MSCSM120HM063AG-SiC-MOSFET-module-DS00004646.pdf Description: MOSFET 4N-CH 1200V 333A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 873W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
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MSCSM120AM11T3AG Microchip Technology MSCSM120AM11T3AG-SiC-MOSFET-module-DS00004577.pdf Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.067kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
Produkt ist nicht verfügbar
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MSCSM70AM07T3AG Microchip Technology MSCSM70AM07T3AG-SiC-MOSFET-module-DS00004606.pdf Description: MOSFET 2N-CH 700V 353A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 988W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Part Status: Active
auf Bestellung 6 Stücke:
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1+474.71 EUR
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MSCSM70AM10T3AG Microchip Technology MSCSM70AM10T3AG-SiC-MOSFET-module-DS00004608.pdf Description: MOSFET 2N-CH 700V 241A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Part Status: Active
auf Bestellung 10 Stücke:
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1+345.63 EUR
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MSCSM120HM16T3AG Microchip Technology MSCSM120HM16T3AG-SiC-MOSFET-module-DS00004613.pdf Description: SIC 4N-CH 1200V 173A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
Produkt ist nicht verfügbar
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MSCSM70AM19T1AG MSCSM70AM19T1AG Microchip Technology MSCSM70AM19T1AG-SiC-MOSFET-module-DS00004605.pdf Description: MOSFET 2N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
auf Bestellung 21 Stücke:
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1+169.07 EUR
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MSCSM120AM31T1AG Microchip Technology MSCSM120AM31T1AG-SiC-MOSFET-module-DS00004618.pdf Description: SIC 2N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
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MSCSM70AM025T6AG Microchip Technology MSCSM70AM025T6AG-SiC-MOSFET-module-DS00004628.pdf Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.882kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Part Status: Active
Produkt ist nicht verfügbar
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MSCSM70AM025T6LIAG Microchip Technology MSCSM70AM025T6LIAG-SiC-MOSFET-module-DS00004627.pdf Description: PM-MOSFET-SIC-SP6L1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.882kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Part Status: Active
Produkt ist nicht verfügbar
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MSCSM120AM03T6LIAG Microchip Technology MSCSM120AM03T6LIAG-SiC-MOSFET-module-DS00004570.pdf Description: MOSFET 2N-CH 1200V 805A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.215kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 30mA
Part Status: Active
Produkt ist nicht verfügbar
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MSCSM120HM31T3AG Microchip Technology MSCSM120HM31T3AG-SiC-MOSFET-module-DS00004643.pdf Description: SIC 4N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
Produkt ist nicht verfügbar
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MSCSM120AM027T6AG Microchip Technology MSCSM120AM027T6AG-SiC-MOSFET-module-DS00004630.pdf Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Part Status: Active
Produkt ist nicht verfügbar
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MSCSM70HM05AG Microchip Technology MSCSM70HM05AG-SiC-MOSFET-module-DS00004601.pdf Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 966W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Part Status: Active
Produkt ist nicht verfügbar
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MSCSM70TAM10TPAG Microchip Technology MSCSM70TAM10TPAG-SiC-MOSFET-module-DS00004626.pdf Description: PM-MOSFET-SIC-SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 674W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Part Status: Active
Produkt ist nicht verfügbar
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2N5151L 8945-lds-0132-datasheet
2N5151L
Hersteller: Microchip Technology
Description: TRANS PNP 80V 2A TO5AA
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Supplier Device Package: TO-5AA
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/545
Produkt ist nicht verfügbar
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DSC2311KE2-R0090T
Hersteller: Microchip Technology
Description: MEMS CLOCK GEN DUAL OUTPUT
Produkt ist nicht verfügbar
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DSC2311KI1-R0051T 20005611A.pdf
DSC2311KI1-R0051T
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Produkt ist nicht verfügbar
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DSC2311KL1-R0054 DSC2311KL1-R0054.pdf
DSC2311KL1-R0054
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Produkt ist nicht verfügbar
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DSC2311KI2-R0057T DSC2311KI2-R0057.pdf
DSC2311KI2-R0057T
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Produkt ist nicht verfügbar
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DSC2311KI1-R0040
Hersteller: Microchip Technology
Description: MEMS CLOCK GEN DUAL OUTPUT
Produkt ist nicht verfügbar
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DSC2311KI1-R0053T DSC2311KI1-R0053.pdf
DSC2311KI1-R0053T
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Produkt ist nicht verfügbar
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DSC2311KM1-R0002 DSC2311KM1-R0002.pdf
DSC2311KM1-R0002
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
Produkt ist nicht verfügbar
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DSC2311KI1-R0054 DSC2311KI1-R0054.pdf
DSC2311KI1-R0054
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KL1-R0054T DSC2311KL1-R0054.pdf
DSC2311KL1-R0054T
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Produkt ist nicht verfügbar
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DSC2311KI2-R0055T DSC2311KI2-R0055.pdf
DSC2311KI2-R0055T
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Produkt ist nicht verfügbar
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DSC2311KI1-R0040T
Hersteller: Microchip Technology
Description: MEMS CLOCK GEN DUAL OUTPUT
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DSC2311KE2-R0016T DSC2311KE2-R0016.pdf
DSC2311KE2-R0016T
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
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DSC2311KI2-R0016 DSC2311KI2-R0016.pdf
DSC2311KI2-R0016
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KL2-R0091T
Hersteller: Microchip Technology
Description: MEMS CLOCK GEN DUAL OUTPUT
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DSC2311KL2-R0048T DSC2311KL2-R0048.pdf
DSC2311KL2-R0048T
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Produkt ist nicht verfügbar
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DSC2311KM2-R0050 DSC2311KM2-R0050.pdf
DSC2311KM2-R0050
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Produkt ist nicht verfügbar
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DSC2311KL1-R0002T DSC2311KL1-R0002.pdf
DSC2311KL1-R0002T
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
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DSC2311KE1-R0047 DSC2311KE1-R0047.pdf
DSC2311KE1-R0047
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Produkt ist nicht verfügbar
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DSC2311KI2-R0008T DSC2311KI2-R0008.pdf
DSC2311KI2-R0008T
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
Produkt ist nicht verfügbar
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DSC2311KL2-R0048 DSC2311KL2-R0048.pdf
DSC2311KL2-R0048
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Produkt ist nicht verfügbar
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DSC2311KM2-R0002 20005611A.pdf
DSC2311KM2-R0002
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
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DSC2311KL2-R0002T DSC2311KL2-R0002.pdf
DSC2311KL2-R0002T
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
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DSC2311KI1-R0054T DSC2311KI1-R0054.pdf
DSC2311KI1-R0054T
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6VDFN
Produkt ist nicht verfügbar
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DSC2311KI1-R0059T DSC2311KI1-R0059.pdf
DSC2311KI1-R0059T
Hersteller: Microchip Technology
Description: MEMS OSC XO 2.25V-3.6V 6SMD
Produkt ist nicht verfügbar
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MSMCJ30A/TR 10561-msmc-datasheet
MSMCJ30A/TR
Hersteller: Microchip Technology
Description: TVS DIODE 30VWM 48.4VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 31A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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DSC6001JI1B-460K800 DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf
DSC6001JI1B-460K800
Hersteller: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-85C 50P
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DSC6001JI1B-460K800T DSC60xxB-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20006133A.pdf
DSC6001JI1B-460K800T
Hersteller: Microchip Technology
Description: MEMS OSC ULP LVCMOS -40C-85C 50P
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1N4759AP/TR8 10911-sa5-33-datasheet
1N4759AP/TR8
Hersteller: Microchip Technology
Description: DIODE ZENER 62V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
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1N4759AG/TR
1N4759AG/TR
Hersteller: Microchip Technology
Description: DIODE ZENER 62V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Produkt ist nicht verfügbar
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1N4759UR-1
1N4759UR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 62V 1W DO213AB
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 62 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 47.1 V
Produkt ist nicht verfügbar
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AX500-PQ208I index.php?option=com_docman&task=doc_download&gid=130669
Hersteller: Microchip Technology
Description: IC FPGA 115 I/O 208QFP
auf Bestellung 33 Stücke:
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AX500-1PQ208I index.php?option=com_docman&task=doc_download&gid=130669
Hersteller: Microchip Technology
Description: IC FPGA 115 I/O 208QFP
auf Bestellung 2 Stücke:
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MNS1N5819UR-1 131895-lds-0301-1.pdf
MNS1N5819UR-1
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
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MNS1N5819UR-1/TR 131895-lds-0301-1.pdf
MNS1N5819UR-1/TR
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB (MELF, LL41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Grade: Military
Qualification: MIL-PRF-19500/586
Produkt ist nicht verfügbar
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1N5913B/TR
1N5913B/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Produkt ist nicht verfügbar
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1N5913BUR-1/TR
1N5913BUR-1/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
Produkt ist nicht verfügbar
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MSCSM120TAM31T3AG MSCSM120TAM31T3AG-SiC-MOSFET-module-DS00004640.pdf
Hersteller: Microchip Technology
Description: SIC 6N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
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MSCSM70HM19T3AG MSCSM70HM19T3AG-SiC-MOSFET-module-DS00004607.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+341.05 EUR
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MSCSM120AM08T3AG MSCSM120AM08T3AG-SiC-MOSFET-module-DS00004574.pdf
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.409kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12100pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
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MSCSM120AM02T6LIAG MSCSM120AM02T6LIAG-SiC-MOSFET-module-DS00004562.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 947A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36200pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 36mA
Part Status: Active
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MSCSM120HM50T3AG MSCSM120HM50T3AG-SiC-MOSFET-module-DS00004645.pdf
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 245W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Vgs(th) (Max) @ Id: 2.7V @ 2mA
Part Status: Active
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MSCSM120AM16T1AG MSCSM120AM16T1AG-SiC-MOSFET-module-DS00004579.pdf
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 173A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
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MSCSM120AM042T6LIAG MSCSM120AM042T6LIAG-SiC-MOSFET-module-DS00004631.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 495A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Part Status: Active
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MSCSM70HM038AG MSCSM70HM038AG-SiC-MOSFET-module-DS00004602.pdf
Hersteller: Microchip Technology
Description: SIC 4N-CH 700V 464A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.277kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 16mA
Part Status: Active
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MSCSM120HM083AG MSCSM120HM083AG-SiC-MOSFET-module-DS00004648.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1200V 251A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
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MSCSM120HM063AG MSCSM120HM063AG-SiC-MOSFET-module-DS00004646.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1200V 333A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 873W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Part Status: Active
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MSCSM120AM11T3AG MSCSM120AM11T3AG-SiC-MOSFET-module-DS00004577.pdf
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP3F
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.067kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Part Status: Active
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MSCSM70AM07T3AG MSCSM70AM07T3AG-SiC-MOSFET-module-DS00004606.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 700V 353A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 988W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Part Status: Active
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+474.71 EUR
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MSCSM70AM10T3AG MSCSM70AM10T3AG-SiC-MOSFET-module-DS00004608.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 700V 241A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Part Status: Active
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+345.63 EUR
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MSCSM120HM16T3AG MSCSM120HM16T3AG-SiC-MOSFET-module-DS00004613.pdf
Hersteller: Microchip Technology
Description: SIC 4N-CH 1200V 173A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Part Status: Active
Produkt ist nicht verfügbar
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MSCSM70AM19T1AG MSCSM70AM19T1AG-SiC-MOSFET-module-DS00004605.pdf
MSCSM70AM19T1AG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 700V 124A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Part Status: Active
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+169.07 EUR
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MSCSM120AM31T1AG MSCSM120AM31T1AG-SiC-MOSFET-module-DS00004618.pdf
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
Produkt ist nicht verfügbar
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MSCSM70AM025T6AG MSCSM70AM025T6AG-SiC-MOSFET-module-DS00004628.pdf
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.882kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Part Status: Active
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MSCSM70AM025T6LIAG MSCSM70AM025T6LIAG-SiC-MOSFET-module-DS00004627.pdf
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6L1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.882kW (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Part Status: Active
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MSCSM120AM03T6LIAG MSCSM120AM03T6LIAG-SiC-MOSFET-module-DS00004570.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 805A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.215kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 30mA
Part Status: Active
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MSCSM120HM31T3AG MSCSM120HM31T3AG-SiC-MOSFET-module-DS00004643.pdf
Hersteller: Microchip Technology
Description: SIC 4N-CH 1200V 89A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Part Status: Active
Produkt ist nicht verfügbar
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MSCSM120AM027T6AG MSCSM120AM027T6AG-SiC-MOSFET-module-DS00004630.pdf
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Part Status: Active
Produkt ist nicht verfügbar
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MSCSM70HM05AG MSCSM70HM05AG-SiC-MOSFET-module-DS00004601.pdf
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 966W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Part Status: Active
Produkt ist nicht verfügbar
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MSCSM70TAM10TPAG MSCSM70TAM10TPAG-SiC-MOSFET-module-DS00004626.pdf
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6P
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 674W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Part Status: Active
Produkt ist nicht verfügbar
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