Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (276882) > Seite 1575 nach 4615
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MASMCG150CA | Microchip Technology |
 Description: TVS DIODE 150VWM 243VC SMCG |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MASMCG150A | Microchip Technology |
Description: TVS DIODE 150VWM 243VC SMCG |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MASMCG14CAe3 | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC SMCG |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MASMCG150Ae3 | Microchip Technology |
Description: TVS DIODE 150VWM 243VC SMCG |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MASMCG14Ae3 | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC SMCG |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MASMCG14CA | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC SMCG |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MASMCG13CAe3 | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC SMCG |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MASMCG14A | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC SMCG |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MASMCG13CA | Microchip Technology |
Description: TVS DIODE 13VWM 21.5VC SMCG |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MASMCG150CAe3 | Microchip Technology |
Description: TVS DIODE 150VWM 243VC SMCG |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| S504100 | Microchip Technology |
Description: DIODE STD 1000V 300A DO205AB Packaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Current - Reverse Leakage @ Vr: 75 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| S504140 | Microchip Technology |
Description: DIODE STD 1400V 300A DO205AB Packaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Current - Reverse Leakage @ Vr: 75 µA @ 1400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| S504160 | Microchip Technology |
Description: DIODE STD 1600V 300A DO205AB Packaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Current - Reverse Leakage @ Vr: 75 µA @ 1600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| S504120 | Microchip Technology |
Description: DIODE STD 1200V 300A DO205AB Packaging: Bulk Package / Case: DO-205AB, DO-9, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 300A Supplier Device Package: DO-205AB (DO-9) Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A Current - Reverse Leakage @ Vr: 75 µA @ 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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MCP1501T-33E/SN | Microchip Technology |
Description: IC VREF SERIES 0.1% 8SOIC Tolerance: ±0.1% Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Temperature Coefficient: 50ppm/°C Output Type: Fixed Mounting Type: Surface Mount Voltage - Input: 3.5V ~ 5.5V Reference Type: Series Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 550µA Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 3.3V Part Status: Active Current - Output: 20 mA |
Produkt ist nicht verfügbar |
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MCP1501T-33E/SN | Microchip Technology |
Description: IC VREF SERIES 0.1% 8SOIC Tolerance: ±0.1% Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Temperature Coefficient: 50ppm/°C Output Type: Fixed Mounting Type: Surface Mount Voltage - Input: 3.5V ~ 5.5V Reference Type: Series Operating Temperature: -40°C ~ 125°C (TA) Current - Supply: 550µA Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 3.3V Part Status: Active Current - Output: 20 mA |
auf Bestellung 2024 Stücke: Lieferzeit 10-14 Tag (e) |
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SMAJ33CAE3/TR13 | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 9.4A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 500W Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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SMAJ33CAE3/TR13 | Microchip Technology |
Description: TVS DIODE 33VWM 53.3VC DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 9.4A Voltage - Reverse Standoff (Typ): 33V Supplier Device Package: DO-214AC (SMA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 36.7V Voltage - Clamping (Max) @ Ipp: 53.3V Power - Peak Pulse: 500W Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| DSA6102MI3B-038.4000TVAO | Microchip Technology | Description: MEMS OSC AUTO LOWPWR -40C-85C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| DSA6102MI3B-038.4000VAO | Microchip Technology | Description: MEMS OSC AUTO LOWPWR -40C-85C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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VSC8489YJU-17 | Microchip Technology |
Description: IC TELECOM INTERFACE 196FCBGA |
auf Bestellung 323 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4154-1/TR | Microchip Technology |
Description: DIODE STANDARD 35V 200MA DO204AH Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 2 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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1N4154-1E3 | Microchip Technology |
Description: DIODE STANDARD 35V 200MA DO204AH Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 2 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 35 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA Current - Reverse Leakage @ Vr: 100 nA @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| JANTXV2N7368 | Microchip Technology |
Description: TRANS NPN 80V 0.001A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 1 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 115 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTXV2N7372 | Microchip Technology |
Description: TRANS PNP 80V 50UA TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 50 µA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 4 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| JAN2N7371 | Microchip Technology |
Description: TRANS PNP DARL 100V 0.001A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-254 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W Qualification: MIL-PRF-19500/623 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTX2N7371 | Microchip Technology |
Description: TRANS PNP DARL 100V 0.001A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-254 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W Qualification: MIL-PRF-19500/623 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANS2N7373 | Microchip Technology |
Description: TRANS NPN 80V 50UA TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V Supplier Device Package: TO-254 Part Status: Active Current - Collector (Ic) (Max): 50 µA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 4 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| 2N7371 | Microchip Technology |
Description: TRANS PNP DARL 100V 12A TO-254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-254 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W Qualification: MIL-PRF-19500/623 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MS1N6659R | Microchip Technology | Description: UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MS1N6659 | Microchip Technology | Description: UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MS1N6673 | Microchip Technology | Description: UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MS1N6672 | Microchip Technology |
Description: DIODE ARRAY GP 300V 15A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A (DC) Supplier Device Package: TO-254AA Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 240 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N6767 | Microchip Technology | Description: UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| MS1N6674R | Microchip Technology | Description: UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N6674 | Microchip Technology |
Description: DIODE GEN PURP 500V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N6766R | Microchip Technology | Description: UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| 2N7377 | Microchip Technology | Description: POWER BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTX1N6674 | Microchip Technology |
Description: DIODE GEN PURP 500V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Part Status: Active Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N6767R | Microchip Technology | Description: UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| JAN1N6673 | Microchip Technology | Description: RECTIFIER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTX1N6673R | Microchip Technology | Description: RECTIFIER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N6766 | Microchip Technology | Description: UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N6764 | Microchip Technology |
Description: DIODE GEN PURP 150V 12A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 300pF @ 5V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-254 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
Produkt ist nicht verfügbar |
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| Jantx1N6658 | Microchip Technology | Description: RECTIFIER |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N6659R | Microchip Technology |
Description: DIODE GEN PURP 200V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N6657R | Microchip Technology |
Description: RECTIFIER DIODE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTXV1N6672 | Microchip Technology |
Description: DIODE GEN PURP 300V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 240 V Qualification: MIL-PRF-19500/617 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| 2N7376 | Microchip Technology | Description: POWER BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| JAN1N6672 | Microchip Technology |
Description: DIODE GEN PURP 300V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 240 V Qualification: MIL-PRF-19500/617 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N6657 | Microchip Technology |
Description: RECTIFIER DIODE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N6763R | Microchip Technology |
Description: DIODE GEN PURP 100V 12A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 300pF @ 5V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-254 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| 1N6764R | Microchip Technology |
Description: RECTIFIER DIODE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTXV1N6672R | Microchip Technology |
Description: DIODE GEN PURP 300V 15A TO254 Packaging: Bulk Package / Case: TO-254-3, TO-254AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard, Reverse Polarity Capacitance @ Vr, F: 150pF @ 10V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: TO-254 Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Current - Reverse Leakage @ Vr: 50 µA @ 240 V Qualification: MIL-PRF-19500/617 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| JANTX1N5653A | Microchip Technology |
Description: TVS DIODE 58.1VWM 92VC DO13 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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DSC6013MI1A-PROGRAMMABLE | Microchip Technology |
Description: MEMS OSC PROG XO CMOS 1.71V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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DSC6112JE1A-PROGRAMMABLE | Microchip Technology |
Description: MEMS OSC PROG XO CMOS 1.71V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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DSC6112CI1A-PROGRAMMABLE | Microchip Technology |
Description: MEMS OSC PROG XO CMOS 1.71V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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DSC6111HI2A-PROGRAMMABLE | Microchip Technology |
Description: MEMS OSC PROG XO CMOS 1.71V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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DSC6011CE2A-PROGRAMMABLE | Microchip Technology |
Description: MEMS OSC PROG XO CMOS 1.71V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MASMCG150CA |
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Hersteller: Microchip Technology
Description: TVS DIODE 150VWM 243VC SMCG
Description: TVS DIODE 150VWM 243VC SMCG
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MASMCG150A |
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Hersteller: Microchip Technology
Description: TVS DIODE 150VWM 243VC SMCG
Description: TVS DIODE 150VWM 243VC SMCG
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MASMCG14CAe3 |
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Hersteller: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC SMCG
Description: TVS DIODE 14VWM 23.2VC SMCG
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MASMCG150Ae3 |
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Hersteller: Microchip Technology
Description: TVS DIODE 150VWM 243VC SMCG
Description: TVS DIODE 150VWM 243VC SMCG
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MASMCG14Ae3 |
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Hersteller: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC SMCG
Description: TVS DIODE 14VWM 23.2VC SMCG
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| MASMCG14CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC SMCG
Description: TVS DIODE 14VWM 23.2VC SMCG
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| MASMCG13CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC SMCG
Description: TVS DIODE 13VWM 21.5VC SMCG
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| MASMCG14A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC SMCG
Description: TVS DIODE 14VWM 23.2VC SMCG
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| MASMCG13CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC SMCG
Description: TVS DIODE 13VWM 21.5VC SMCG
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| MASMCG150CAe3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 150VWM 243VC SMCG
Description: TVS DIODE 150VWM 243VC SMCG
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| S504100 |
|
Hersteller: Microchip Technology
Description: DIODE STD 1000V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1000 V
Description: DIODE STD 1000V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1000 V
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| S504140 |
|
Hersteller: Microchip Technology
Description: DIODE STD 1400V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1400 V
Description: DIODE STD 1400V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1400 V
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| S504160 |
|
Hersteller: Microchip Technology
Description: DIODE STD 1600V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1600 V
Description: DIODE STD 1600V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1600 V
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| S504120 |
|
Hersteller: Microchip Technology
Description: DIODE STD 1200V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Description: DIODE STD 1200V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
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| MCP1501T-33E/SN |
|
Hersteller: Microchip Technology
Description: IC VREF SERIES 0.1% 8SOIC
Tolerance: ±0.1%
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.5V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 550µA
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Current - Output: 20 mA
Description: IC VREF SERIES 0.1% 8SOIC
Tolerance: ±0.1%
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.5V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 550µA
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Current - Output: 20 mA
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| MCP1501T-33E/SN |
|
Hersteller: Microchip Technology
Description: IC VREF SERIES 0.1% 8SOIC
Tolerance: ±0.1%
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.5V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 550µA
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Current - Output: 20 mA
Description: IC VREF SERIES 0.1% 8SOIC
Tolerance: ±0.1%
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.5V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 550µA
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Current - Output: 20 mA
auf Bestellung 2024 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 25+ | 1.01 EUR |
| 100+ | 0.91 EUR |
| SMAJ33CAE3/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
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| SMAJ33CAE3/TR13 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
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| DSA6102MI3B-038.4000TVAO |
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Description: MEMS OSC AUTO LOWPWR -40C-85C
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| DSA6102MI3B-038.4000VAO |
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Description: MEMS OSC AUTO LOWPWR -40C-85C
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| VSC8489YJU-17 |
|
Hersteller: Microchip Technology
Description: IC TELECOM INTERFACE 196FCBGA
Description: IC TELECOM INTERFACE 196FCBGA
auf Bestellung 323 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 117.8 EUR |
| 25+ | 107.34 EUR |
| 1N4154-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE STANDARD 35V 200MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: DIODE STANDARD 35V 200MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
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| 1N4154-1E3 |
|
Hersteller: Microchip Technology
Description: DIODE STANDARD 35V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Description: DIODE STANDARD 35V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Produkt ist nicht verfügbar
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| JANTXV2N7368 |
Hersteller: Microchip Technology
Description: TRANS NPN 80V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
Description: TRANS NPN 80V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
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| JANTXV2N7372 |
Hersteller: Microchip Technology
Description: TRANS PNP 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
Description: TRANS PNP 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
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| JAN2N7371 |
Hersteller: Microchip Technology
Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/623
Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/623
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| JANTX2N7371 |
Hersteller: Microchip Technology
Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/623
Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/623
Produkt ist nicht verfügbar
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| JANS2N7373 |
Hersteller: Microchip Technology
Description: TRANS NPN 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
Description: TRANS NPN 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
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Stück im Wert von UAH
| 2N7371 |
Hersteller: Microchip Technology
Description: TRANS PNP DARL 100V 12A TO-254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/623
Description: TRANS PNP DARL 100V 12A TO-254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Qualification: MIL-PRF-19500/623
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| MS1N6659R |
Hersteller: Microchip Technology
Description: UFR,FRR
Description: UFR,FRR
Produkt ist nicht verfügbar
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| MS1N6659 |
Hersteller: Microchip Technology
Description: UFR,FRR
Description: UFR,FRR
Produkt ist nicht verfügbar
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| MS1N6673 |
Hersteller: Microchip Technology
Description: UFR,FRR
Description: UFR,FRR
Produkt ist nicht verfügbar
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| MS1N6672 |
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 300V 15A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-254AA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Description: DIODE ARRAY GP 300V 15A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-254AA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N6767 |
Hersteller: Microchip Technology
Description: UFR,FRR
Description: UFR,FRR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MS1N6674R |
Hersteller: Microchip Technology
Description: UFR,FRR
Description: UFR,FRR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N6674 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 500V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Description: DIODE GEN PURP 500V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N6766R |
Hersteller: Microchip Technology
Description: UFR,FRR
Description: UFR,FRR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7377 |
Hersteller: Microchip Technology
Description: POWER BJT
Description: POWER BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N6674 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 500V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Description: DIODE GEN PURP 500V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N6767R |
Hersteller: Microchip Technology
Description: UFR,FRR
Description: UFR,FRR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N6673 |
Hersteller: Microchip Technology
Description: RECTIFIER
Description: RECTIFIER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N6673R |
Hersteller: Microchip Technology
Description: RECTIFIER
Description: RECTIFIER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N6766 |
Hersteller: Microchip Technology
Description: UFR,FRR
Description: UFR,FRR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N6764 |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE GEN PURP 150V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Jantx1N6658 |
Hersteller: Microchip Technology
Description: RECTIFIER
Description: RECTIFIER
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N6659R |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N6657R |
|
Hersteller: Microchip Technology
Description: RECTIFIER DIODE
Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N6672 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Qualification: MIL-PRF-19500/617
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Qualification: MIL-PRF-19500/617
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N7376 |
Hersteller: Microchip Technology
Description: POWER BJT
Description: POWER BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN1N6672 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Qualification: MIL-PRF-19500/617
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Qualification: MIL-PRF-19500/617
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N6657 |
|
Hersteller: Microchip Technology
Description: RECTIFIER DIODE
Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N6763R |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N6764R |
|
Hersteller: Microchip Technology
Description: RECTIFIER DIODE
Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N6672R |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Qualification: MIL-PRF-19500/617
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Qualification: MIL-PRF-19500/617
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX1N5653A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 58.1VWM 92VC DO13
Description: TVS DIODE 58.1VWM 92VC DO13
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC6013MI1A-PROGRAMMABLE |
|
Hersteller: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
Description: MEMS OSC PROG XO CMOS 1.71V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC6112JE1A-PROGRAMMABLE |
|
Hersteller: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
Description: MEMS OSC PROG XO CMOS 1.71V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC6112CI1A-PROGRAMMABLE |
|
Hersteller: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
Description: MEMS OSC PROG XO CMOS 1.71V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC6111HI2A-PROGRAMMABLE |
|
Hersteller: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
Description: MEMS OSC PROG XO CMOS 1.71V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DSC6011CE2A-PROGRAMMABLE |
|
Hersteller: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
Description: MEMS OSC PROG XO CMOS 1.71V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH