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MCP14A0601-E/SN MCP14A0601-E/SN Microchip Technology 20005593A.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
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8+2.46 EUR
25+2.06 EUR
100+1.87 EUR
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MCP14A0601T-E/MS MCP14A0601T-E/MS Microchip Technology 20005593A.pdf Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-MSOP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MCP14A0601T-E/MS MCP14A0601T-E/MS Microchip Technology 20005593A.pdf Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-MSOP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MCP14A0601T-E/SN MCP14A0601T-E/SN Microchip Technology 20005593A.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MCP14A0601T-E/SN MCP14A0601T-E/SN Microchip Technology 20005593A.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MCP14A0601T-E/MNY MCP14A0601T-E/MNY Microchip Technology 20005593A.pdf Description: IC GATE DRVR LOW-SIDE 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-TDFN (2x3)
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MCP14A0601T-E/MNY MCP14A0601T-E/MNY Microchip Technology 20005593A.pdf Description: IC GATE DRVR LOW-SIDE 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-TDFN (2x3)
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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93LC66BT-E/OT 93LC66BT-E/OT Microchip Technology 21795E.pdf Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Verified
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93LC66BT-E/OT 93LC66BT-E/OT Microchip Technology 21795E.pdf Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Verified
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93LC66AT-E/OT 93LC66AT-E/OT Microchip Technology 21795E.pdf Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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93LC66AT-E/OT 93LC66AT-E/OT Microchip Technology 21795E.pdf Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
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27+0.66 EUR
100+0.64 EUR
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JAN1N3826AUR-1 JAN1N3826AUR-1 Microchip Technology 1N3821AUR-1-1N3828AUR-1.CDLL3821-CDLL+3828A.pdf Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 1
Grade: Military
Qualification: MIL-PRF-19500/115
Produkt ist nicht verfügbar
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JANS1N6125A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 47.1VWM 85.3VC AXIAL
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MASMCG150CA Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 150VWM 243VC SMCG
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MASMCG150A Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 150VWM 243VC SMCG
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MASMCG14CAe3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 14VWM 23.2VC SMCG
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MASMCG150Ae3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 150VWM 243VC SMCG
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MASMCG14Ae3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 14VWM 23.2VC SMCG
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MASMCG14CA Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 14VWM 23.2VC SMCG
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MASMCG13CAe3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 13VWM 21.5VC SMCG
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MASMCG14A Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 14VWM 23.2VC SMCG
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MASMCG13CA Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 13VWM 21.5VC SMCG
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MASMCG150CAe3 Microchip Technology 10561-msmc-datasheet Description: TVS DIODE 150VWM 243VC SMCG
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S504100 Microchip Technology coe-50.pdf Description: DIODE STD 1000V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1000 V
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S504140 Microchip Technology coe-50.pdf Description: DIODE STD 1400V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1400 V
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S504160 Microchip Technology coe-50.pdf Description: DIODE STD 1600V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1600 V
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S504120 Microchip Technology coe-50.pdf Description: DIODE STD 1200V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
Produkt ist nicht verfügbar
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MCP1501T-33E/SN MCP1501T-33E/SN Microchip Technology MCP1501-Data-Sheet-DS20005474F.pdf Description: IC VREF SERIES 0.1% 8SOIC
Packaging: Tape & Reel (TR)
Tolerance: ±0.1%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.5V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 550µA
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Current - Output: 20 mA
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MCP1501T-33E/SN MCP1501T-33E/SN Microchip Technology MCP1501-Data-Sheet-DS20005474F.pdf Description: IC VREF SERIES 0.1% 8SOIC
Packaging: Cut Tape (CT)
Tolerance: ±0.1%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.5V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 550µA
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Current - Output: 20 mA
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SMAJ33CAE3/TR13 SMAJ33CAE3/TR13 Microchip Technology SMAJ5.0-170CA%2Ce3.pdf Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
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SMAJ33CAE3/TR13 SMAJ33CAE3/TR13 Microchip Technology SMAJ5.0-170CA%2Ce3.pdf Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
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59+0.3 EUR
100+0.26 EUR
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DSA6102MI3B-038.4000TVAO Microchip Technology Description: MEMS OSC AUTO LOWPWR -40C-85C
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DSA6102MI3B-038.4000VAO Microchip Technology Description: MEMS OSC AUTO LOWPWR -40C-85C
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VSC8489YJU-17 VSC8489YJU-17 Microchip Technology VMDS-10504.pdf Description: IC TELECOM INTERFACE 196FCBGA
auf Bestellung 323 Stücke:
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1+117.8 EUR
25+107.34 EUR
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1N4154-1/TR 1N4154-1/TR Microchip Technology 1N4149-1%2C1N4151-1%2C1N4154-1_1N4446-1%2C1N4449-1.pdf Description: DIODE STANDARD 35V 200MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
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1N4154-1E3 1N4154-1E3 Microchip Technology 1N4149-1%2C1N4151-1%2C1N4154-1_1N4446-1%2C1N4449-1.pdf Description: DIODE STANDARD 35V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Produkt ist nicht verfügbar
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JANTXV2N7368 Microchip Technology Description: TRANS NPN 80V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
Produkt ist nicht verfügbar
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JANTXV2N7372 Microchip Technology Description: TRANS PNP 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
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JAN2N7371 Microchip Technology Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
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JANTX2N7371 Microchip Technology Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
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JANS2N7373 Microchip Technology Description: TRANS NPN 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
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2N7371 Microchip Technology Description: TRANS PNP DARL 100V 12A TO-254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
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MS1N6659R Microchip Technology Description: UFR,FRR
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MS1N6659 Microchip Technology Description: UFR,FRR
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MS1N6673 Microchip Technology Description: UFR,FRR
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MS1N6672 Microchip Technology Description: DIODE ARRAY GP 300V 15A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-254AA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
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1N6767 Microchip Technology Description: UFR,FRR
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MS1N6674R Microchip Technology Description: UFR,FRR
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1N6674 Microchip Technology 8826-lds-0020-datasheet Description: DIODE GEN PURP 500V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
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1N6766R Microchip Technology Description: UFR,FRR
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2N7377 Microchip Technology Description: POWER BJT
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JANTX1N6674 Microchip Technology Description: DIODE GEN PURP 500V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
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1N6767R Microchip Technology Description: UFR,FRR
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JAN1N6673 Microchip Technology Description: RECTIFIER
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JANTX1N6673R Microchip Technology Description: RECTIFIER
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1N6766 Microchip Technology Description: UFR,FRR
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1N6764 Microchip Technology 8977-lds-0172-datasheet Description: DIODE GEN PURP 150V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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Jantx1N6658 Microchip Technology Description: RECTIFIER
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1N6659R Microchip Technology 8910-lds-0068-datasheet Description: DIODE GEN PURP 200V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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1N6657R Microchip Technology 8910-lds-0068-datasheet Description: RECTIFIER DIODE
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MCP14A0601-E/SN 20005593A.pdf
MCP14A0601-E/SN
Hersteller: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 226 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
25+2.06 EUR
100+1.87 EUR
Mindestbestellmenge: 8
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MCP14A0601T-E/MS 20005593A.pdf
MCP14A0601T-E/MS
Hersteller: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-MSOP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
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MCP14A0601T-E/MS 20005593A.pdf
MCP14A0601T-E/MS
Hersteller: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-MSOP
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
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MCP14A0601T-E/SN 20005593A.pdf
MCP14A0601T-E/SN
Hersteller: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
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MCP14A0601T-E/SN 20005593A.pdf
MCP14A0601T-E/SN
Hersteller: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
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MCP14A0601T-E/MNY 20005593A.pdf
MCP14A0601T-E/MNY
Hersteller: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-TDFN (2x3)
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
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MCP14A0601T-E/MNY 20005593A.pdf
MCP14A0601T-E/MNY
Hersteller: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Inverting
Supplier Device Package: 8-TDFN (2x3)
Rise / Fall Time (Typ): 10ns, 10ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
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93LC66BT-E/OT 21795E.pdf
93LC66BT-E/OT
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Verified
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93LC66BT-E/OT 21795E.pdf
93LC66BT-E/OT
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 256 x 16
DigiKey Programmable: Verified
auf Bestellung 2990 Stücke:
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Anzahl Preis
29+0.62 EUR
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93LC66AT-E/OT 21795E.pdf
93LC66AT-E/OT
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
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93LC66AT-E/OT 21795E.pdf
93LC66AT-E/OT
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT MIC WIRE SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 2 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-6
Part Status: Active
Write Cycle Time - Word, Page: 6ms
Memory Interface: Microwire
Memory Organization: 512 x 8
DigiKey Programmable: Verified
auf Bestellung 1970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
27+0.66 EUR
100+0.64 EUR
Mindestbestellmenge: 25
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JAN1N3826AUR-1 1N3821AUR-1-1N3828AUR-1.CDLL3821-CDLL+3828A.pdf
JAN1N3826AUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 1W DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-213AB (MELF, LL41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 200
Voltage Coupled to Current - Reverse Leakage @ Vr: 1
Grade: Military
Qualification: MIL-PRF-19500/115
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JANS1N6125A 127891-lds-0277-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 47.1VWM 85.3VC AXIAL
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MASMCG150CA 10561-msmc-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 150VWM 243VC SMCG
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MASMCG150A 10561-msmc-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 150VWM 243VC SMCG
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MASMCG14CAe3 10561-msmc-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC SMCG
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MASMCG150Ae3 10561-msmc-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 150VWM 243VC SMCG
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MASMCG14Ae3 10561-msmc-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC SMCG
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MASMCG14CA 10561-msmc-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC SMCG
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MASMCG13CAe3 10561-msmc-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC SMCG
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MASMCG14A 10561-msmc-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC SMCG
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MASMCG13CA 10561-msmc-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 13VWM 21.5VC SMCG
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MASMCG150CAe3 10561-msmc-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 150VWM 243VC SMCG
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S504100 coe-50.pdf
Hersteller: Microchip Technology
Description: DIODE STD 1000V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1000 V
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S504140 coe-50.pdf
Hersteller: Microchip Technology
Description: DIODE STD 1400V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1400 V
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S504160 coe-50.pdf
Hersteller: Microchip Technology
Description: DIODE STD 1600V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1600 V
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S504120 coe-50.pdf
Hersteller: Microchip Technology
Description: DIODE STD 1200V 300A DO205AB
Packaging: Bulk
Package / Case: DO-205AB, DO-9, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 300A
Supplier Device Package: DO-205AB (DO-9)
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
Current - Reverse Leakage @ Vr: 75 µA @ 1200 V
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MCP1501T-33E/SN MCP1501-Data-Sheet-DS20005474F.pdf
MCP1501T-33E/SN
Hersteller: Microchip Technology
Description: IC VREF SERIES 0.1% 8SOIC
Packaging: Tape & Reel (TR)
Tolerance: ±0.1%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.5V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 550µA
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Current - Output: 20 mA
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MCP1501T-33E/SN MCP1501-Data-Sheet-DS20005474F.pdf
MCP1501T-33E/SN
Hersteller: Microchip Technology
Description: IC VREF SERIES 0.1% 8SOIC
Packaging: Cut Tape (CT)
Tolerance: ±0.1%
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 50ppm/°C
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 3.5V ~ 5.5V
Reference Type: Series
Operating Temperature: -40°C ~ 125°C (TA)
Current - Supply: 550µA
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
Current - Output: 20 mA
auf Bestellung 2024 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
25+1.01 EUR
100+0.91 EUR
Mindestbestellmenge: 15
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SMAJ33CAE3/TR13 SMAJ5.0-170CA%2Ce3.pdf
SMAJ33CAE3/TR13
Hersteller: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Produkt ist nicht verfügbar
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SMAJ33CAE3/TR13 SMAJ5.0-170CA%2Ce3.pdf
SMAJ33CAE3/TR13
Hersteller: Microchip Technology
Description: TVS DIODE 33VWM 53.3VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
auf Bestellung 2801 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
100+0.26 EUR
Mindestbestellmenge: 59
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DSA6102MI3B-038.4000TVAO
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
Produkt ist nicht verfügbar
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DSA6102MI3B-038.4000VAO
Hersteller: Microchip Technology
Description: MEMS OSC AUTO LOWPWR -40C-85C
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VSC8489YJU-17 VMDS-10504.pdf
VSC8489YJU-17
Hersteller: Microchip Technology
Description: IC TELECOM INTERFACE 196FCBGA
auf Bestellung 323 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+117.8 EUR
25+107.34 EUR
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1N4154-1/TR 1N4149-1%2C1N4151-1%2C1N4154-1_1N4446-1%2C1N4449-1.pdf
1N4154-1/TR
Hersteller: Microchip Technology
Description: DIODE STANDARD 35V 200MA DO204AH
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
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1N4154-1E3 1N4149-1%2C1N4151-1%2C1N4154-1_1N4446-1%2C1N4449-1.pdf
1N4154-1E3
Hersteller: Microchip Technology
Description: DIODE STANDARD 35V 200MA DO204AH
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 2 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 30 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Produkt ist nicht verfügbar
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JANTXV2N7368
Hersteller: Microchip Technology
Description: TRANS NPN 80V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
Produkt ist nicht verfügbar
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JANTXV2N7372
Hersteller: Microchip Technology
Description: TRANS PNP 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
Produkt ist nicht verfügbar
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JAN2N7371
Hersteller: Microchip Technology
Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
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JANTX2N7371
Hersteller: Microchip Technology
Description: TRANS PNP DARL 100V 0.001A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 1 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
Produkt ist nicht verfügbar
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JANS2N7373
Hersteller: Microchip Technology
Description: TRANS NPN 80V 50UA TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2.5A, 5V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 50 µA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 4 W
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2N7371
Hersteller: Microchip Technology
Description: TRANS PNP DARL 100V 12A TO-254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-254
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Grade: Military
Qualification: MIL-PRF-19500/623
Produkt ist nicht verfügbar
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MS1N6659R
Hersteller: Microchip Technology
Description: UFR,FRR
Produkt ist nicht verfügbar
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MS1N6659
Hersteller: Microchip Technology
Description: UFR,FRR
Produkt ist nicht verfügbar
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MS1N6673
Hersteller: Microchip Technology
Description: UFR,FRR
Produkt ist nicht verfügbar
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MS1N6672
Hersteller: Microchip Technology
Description: DIODE ARRAY GP 300V 15A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-254AA
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Produkt ist nicht verfügbar
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1N6767
Hersteller: Microchip Technology
Description: UFR,FRR
Produkt ist nicht verfügbar
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MS1N6674R
Hersteller: Microchip Technology
Description: UFR,FRR
Produkt ist nicht verfügbar
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1N6674 8826-lds-0020-datasheet
Hersteller: Microchip Technology
Description: DIODE GEN PURP 500V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Produkt ist nicht verfügbar
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1N6766R
Hersteller: Microchip Technology
Description: UFR,FRR
Produkt ist nicht verfügbar
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2N7377
Hersteller: Microchip Technology
Description: POWER BJT
Produkt ist nicht verfügbar
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JANTX1N6674
Hersteller: Microchip Technology
Description: DIODE GEN PURP 500V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Produkt ist nicht verfügbar
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1N6767R
Hersteller: Microchip Technology
Description: UFR,FRR
Produkt ist nicht verfügbar
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JAN1N6673
Hersteller: Microchip Technology
Description: RECTIFIER
Produkt ist nicht verfügbar
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JANTX1N6673R
Hersteller: Microchip Technology
Description: RECTIFIER
Produkt ist nicht verfügbar
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1N6766
Hersteller: Microchip Technology
Description: UFR,FRR
Produkt ist nicht verfügbar
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1N6764 8977-lds-0172-datasheet
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Produkt ist nicht verfügbar
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Jantx1N6658
Hersteller: Microchip Technology
Description: RECTIFIER
Produkt ist nicht verfügbar
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1N6659R 8910-lds-0068-datasheet
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Produkt ist nicht verfügbar
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1N6657R 8910-lds-0068-datasheet
Hersteller: Microchip Technology
Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
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