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JANTXV1N6672 Microchip Technology Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Grade: Military
Qualification: MIL-PRF-19500/617
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2N7376 Microchip Technology Description: POWER BJT
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JAN1N6672 Microchip Technology Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Grade: Military
Qualification: MIL-PRF-19500/617
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1N6657 Microchip Technology 8910-lds-0068-datasheet Description: RECTIFIER DIODE
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1N6763R Microchip Technology 8977-lds-0172-datasheet Description: DIODE GEN PURP 100V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N6764R Microchip Technology 8977-lds-0172-datasheet Description: RECTIFIER DIODE
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JANTXV1N6672R Microchip Technology Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Grade: Military
Qualification: MIL-PRF-19500/617
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JANTX1N5653A Microchip Technology 8922-lds-0096-datasheet Description: TVS DIODE 58.1VWM 92VC DO13
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DSC6013MI1A-PROGRAMMABLE DSC6013MI1A-PROGRAMMABLE Microchip Technology DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf Description: MEMS OSC PROG XO CMOS 1.71V
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DSC6112JE1A-PROGRAMMABLE DSC6112JE1A-PROGRAMMABLE Microchip Technology 20005624B.pdf Description: MEMS OSC PROG XO CMOS 1.71V
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DSC6112CI1A-PROGRAMMABLE DSC6112CI1A-PROGRAMMABLE Microchip Technology 20005624B.pdf Description: MEMS OSC PROG XO CMOS 1.71V
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DSC6111HI2A-PROGRAMMABLE DSC6111HI2A-PROGRAMMABLE Microchip Technology 20005624B.pdf Description: MEMS OSC PROG XO CMOS 1.71V
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DSC6011CE2A-PROGRAMMABLE DSC6011CE2A-PROGRAMMABLE Microchip Technology DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf Description: MEMS OSC PROG XO CMOS 1.71V
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DSC6011HI2A-PROGRAMMABLE DSC6011HI2A-PROGRAMMABLE Microchip Technology DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf Description: MEMS OSC PROG XO CMOS 1.71V
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DSC6112HI2A-PROGRAMMABLE DSC6112HI2A-PROGRAMMABLE Microchip Technology 20005624B.pdf Description: MEMS OSC PROG XO CMOS 1.71V
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3258UPC32IXS 3258UPC32IXS Microchip Technology Description: SMARTRAID ULTRA 3258P-32I /E SIN
Packaging: Bulk
Interface: PCI Express
Type: RAID Adapter
Part Status: Active
Number of Ports: 32
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25LC320A-H/SN16KVAO 25LC320A-H/SN16KVAO Microchip Technology 25LC080C-080D-160C-160D-320A-640A-128-256-20002131D.pdf Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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JANTXV2N3879P Microchip Technology Description: POWER BJT
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2N3879A Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A
Current - Collector Cutoff (Max): 25mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 35 W
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2N4301 Microchip Technology Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Supplier Device Package: TO-61
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 87 W
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MSCSM120AM042D3AG Microchip Technology MSCSM120AM042D3AG-SiC-MOSFET-module-DS00004612.pdf Description: MOSFET 2N-CH 1200V 495A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Part Status: Active
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VCD2-203-44M7360000 Microchip Technology VCD2(XO)100.pdf Description: VCD2-203-44M7360000
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.567" L x 0.378" W (14.40mm x 9.60mm)
Mounting Type: Surface Mount
Output: PECL
Type: XO (Standard)
Current - Supply (Max): 100mA
Height - Seated (Max): 0.217" (5.50mm)
Part Status: Active
Frequency: 44.736 MHz
Base Resonator: Crystal
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MSCSM120DAM31CTBL1NG MSCSM120DAM31CTBL1NG Microchip Technology MSCSM120DAM31CTBL1NG.pdf Description: PM-MOSFET-SIC-SBD-BL1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Power Dissipation (Max): 310W
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
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MSCSM170HM23CT3AG MSCSM170HM23CT3AG Microchip Technology 00003953A.pdf Description: MOSFET 4N-CH 1700V 124A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 602W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Part Status: Active
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MSCSM170TLM15CAG MSCSM170TLM15CAG Microchip Technology Description: MOSFET 4N-CH 1700V 179A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 843W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
Supplier Device Package: SP6C
Part Status: Active
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MSCSM170AM11CT3AG MSCSM170AM11CT3AG Microchip Technology 00003931A.pdf Description: MOSFET 2N-CH 1700V 240A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.14kW (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 10mA
Part Status: Active
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MSCSM170TLM11CAG MSCSM170TLM11CAG Microchip Technology Description: MOSFET 4N-CH 1700V 238A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1114W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 10mA
Supplier Device Package: SP6C
Part Status: Active
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1N4704 Microchip Technology 5827-1n4678-4717-datasheet Description: DIODE ZENER
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1N4704UR-1 Microchip Technology 124397-lds-0240-1-datasheet Description: DIODE ZENER
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1N4704/TR 1N4704/TR Microchip Technology 5827-1n4678-4717-datasheet Description: VOLTAGE REGULATOR
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PIC18F23K22T-I/SS PIC18F23K22T-I/SS Microchip Technology PIC18(L)F2X-4XK22-Data-Sheet-40001412H.pdf Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 8KB (4K x 16)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 19x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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PIC18F23K22T-I/SS PIC18F23K22T-I/SS Microchip Technology PIC18(L)F2X-4XK22-Data-Sheet-40001412H.pdf Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 8KB (4K x 16)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 19x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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MSMCJ130A MSMCJ130A Microchip Technology rf01001_rev_b_final-pd-000307351.pdf Description: TVS DIODE 130VWM 209VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MSMBJSAC6.0 MSMBJSAC6.0 Microchip Technology 123594-msmbjsac5-0-thru-msmbjsac75-e3-datasheet Description: TVS DIODE 6VWM 11.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 41A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.9V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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MSMBJSAC6.0E3/TR Microchip Technology 123594-msmbjsac5-0-thru-msmbjsac75-e3-datasheet Description: TVS DIODE 6VWM 11.2VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 41A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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MSMBJSAC6.0/TR Microchip Technology 123594-msmbjsac5-0-thru-msmbjsac75-e3-datasheet Description: TVS DIODE 6VWM 11.2VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 41A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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MSMBJSAC6.0E3 MSMBJSAC6.0E3 Microchip Technology 123594-msmbjsac5-0-thru-msmbjsac75-e3-datasheet Description: TVS DIODE 6VWM 11.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 41A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.9V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
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5+3.75 EUR
100+3.46 EUR
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OX-221-9102-49M152 OX-221-9102-49M152 Microchip Technology Description: OX-221-9102-49M152
Packaging: Tape & Reel (TR)
Package / Case: 7-SMD, No Lead
Size / Dimension: 1.000" L x 0.866" W (25.40mm x 22.00mm)
Mounting Type: Surface Mount
Output: LVCMOS
Type: OCXO
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±5ppb
Voltage - Supply: 3.3V
Current - Supply (Max): 700mA
Height - Seated (Max): 0.486" (12.35mm)
Frequency: 49.152 MHz
Base Resonator: Crystal
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OX-221-9102-49M152 OX-221-9102-49M152 Microchip Technology Description: OX-221-9102-49M152
Packaging: Cut Tape (CT)
Package / Case: 7-SMD, No Lead
Size / Dimension: 1.000" L x 0.866" W (25.40mm x 22.00mm)
Mounting Type: Surface Mount
Output: LVCMOS
Type: OCXO
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±5ppb
Voltage - Supply: 3.3V
Current - Supply (Max): 700mA
Height - Seated (Max): 0.486" (12.35mm)
Frequency: 49.152 MHz
Base Resonator: Crystal
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MCP33111D-10T-I/MN MCP33111D-10T-I/MN Microchip Technology Description: IC ADC 12BIT SAR 10TDFN
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MCP33121D-10-I/MN MCP33121D-10-I/MN Microchip Technology Description: IC ADC 14BIT SAR 10TDFN
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MCP33121D-10T-I/MN MCP33121D-10T-I/MN Microchip Technology Description: IC ADC 14BIT SAR 10TDFN
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MCP33131D-10T-I/MN MCP33131D-10T-I/MN Microchip Technology Description: IC ADC 16BIT SAR 10TDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Number of Bits: 16
Configuration: ADC
Data Interface: SPI
Reference Type: External
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Analog: 1.7V ~ 1.9V
Voltage - Supply, Digital: 1.7V ~ 5.5V
Sampling Rate (Per Second): 1M
Input Type: Differential, Pseudo-Differential, Single Ended
Number of Inputs: 1
Supplier Device Package: 10-TDFN (3x3)
Architecture: SAR
Ratio - S/H:ADC: 0:1
Grade: Automotive
Part Status: Active
Number of A/D Converters: 1
Qualification: AEC-Q100
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JANTXV1N6068A Microchip Technology Description: TVS DIODE 145VWM 245VC DO13
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JANTX1N6068A/TR JANTX1N6068A/TR Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 145VWM 245VC DO13
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JAN1N6068A JAN1N6068A Microchip Technology Description: TVS DIODE 145VWM 245VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 245V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JAN1N6068A/TR JAN1N6068A/TR Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 145VWM 245VC DO13
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JANTXV1N6068A/TR JANTXV1N6068A/TR Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 145VWM 245VC DO13
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1N6068A/TR 1N6068A/TR Microchip Technology 8923-lds-0097-datasheet Description: TVS DIODE 145VWM 245VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 245V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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2N4348 Microchip Technology Description: POWER BJT
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MCP3423T-E/UN MCP3423T-E/UN Microchip Technology 22088c.pdf Description: IC ADC 18BIT SIGMA-DELTA 10MSOP
Packaging: Tape & Reel (TR)
Features: PGA, Selectable Address
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Bits: 18
Configuration: MUX-PGA-ADC
Data Interface: I2C
Reference Type: Internal
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 2.7V ~ 5.5V
Voltage - Supply, Digital: 2.7V ~ 5.5V
Sampling Rate (Per Second): 3.75
Input Type: Differential
Number of Inputs: 2
Supplier Device Package: 10-MSOP
Architecture: Sigma-Delta
Part Status: Active
Number of A/D Converters: 1
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MCP3423T-E/UN MCP3423T-E/UN Microchip Technology 22088c.pdf Description: IC ADC 18BIT SIGMA-DELTA 10MSOP
Packaging: Cut Tape (CT)
Features: PGA, Selectable Address
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Bits: 18
Configuration: MUX-PGA-ADC
Data Interface: I2C
Reference Type: Internal
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 2.7V ~ 5.5V
Voltage - Supply, Digital: 2.7V ~ 5.5V
Sampling Rate (Per Second): 3.75
Input Type: Differential
Number of Inputs: 2
Supplier Device Package: 10-MSOP
Architecture: Sigma-Delta
Part Status: Active
Number of A/D Converters: 1
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MIC4414YFT-TR MIC4414YFT-TR Microchip Technology MIC4414-15.pdf Description: IC GATE DRVR LOW-SIDE 4TQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 4-TQFN (1.2x1.2)
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
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MIC4414YFT-TR MIC4414YFT-TR Microchip Technology MIC4414-15.pdf Description: IC GATE DRVR LOW-SIDE 4TQFN
Packaging: Cut Tape (CT)
Package / Case: 4-UQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 4-TQFN (1.2x1.2)
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
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CDLL5819/TR CDLL5819/TR Microchip Technology 1N5818UR-1-1N5819UR-1-1N6761UR-1-CDLL-Variants.pdf Description: DIODE SCHOTTKY 45V 1A DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
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CDLL5819/TR CDLL5819/TR Microchip Technology 1N5818UR-1-1N5819UR-1-1N6761UR-1-CDLL-Variants.pdf Description: DIODE SCHOTTKY 45V 1A DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
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1N6864US 1N6864US Microchip Technology 131998-lds-0303-1-datasheet Description: DIODE SCHOTTKY 80V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 80 V
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SMAJ15CAE3/TR13 SMAJ15CAE3/TR13 Microchip Technology SMAJ5.0-170CA%2Ce3.pdf Description: TVS DIODE 15VWM 24.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.6A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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SMAJ15CAE3/TR13 SMAJ15CAE3/TR13 Microchip Technology SMAJ5.0-170CA%2Ce3.pdf Description: TVS DIODE 15VWM 24.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.6A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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EV92X77A EV92X77A Microchip Technology Description: ATEVK-MXT144UD-A EVAL KIT
Packaging: Bulk
Function: Touch Screen Controller
Type: Interface
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: MXT144UD
Secondary Attributes: I2C Interface(s)
Embedded: No
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JANTXV1N6672
Hersteller: Microchip Technology
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Grade: Military
Qualification: MIL-PRF-19500/617
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2N7376
Hersteller: Microchip Technology
Description: POWER BJT
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JAN1N6672
Hersteller: Microchip Technology
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Grade: Military
Qualification: MIL-PRF-19500/617
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1N6657 8910-lds-0068-datasheet
Hersteller: Microchip Technology
Description: RECTIFIER DIODE
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1N6763R 8977-lds-0172-datasheet
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 12A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-254
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N6764R 8977-lds-0172-datasheet
Hersteller: Microchip Technology
Description: RECTIFIER DIODE
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JANTXV1N6672R
Hersteller: Microchip Technology
Description: DIODE GEN PURP 300V 15A TO254
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-254
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 240 V
Grade: Military
Qualification: MIL-PRF-19500/617
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JANTX1N5653A 8922-lds-0096-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 58.1VWM 92VC DO13
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DSC6013MI1A-PROGRAMMABLE DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf
DSC6013MI1A-PROGRAMMABLE
Hersteller: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
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DSC6112JE1A-PROGRAMMABLE 20005624B.pdf
DSC6112JE1A-PROGRAMMABLE
Hersteller: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
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DSC6112CI1A-PROGRAMMABLE 20005624B.pdf
DSC6112CI1A-PROGRAMMABLE
Hersteller: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
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DSC6111HI2A-PROGRAMMABLE 20005624B.pdf
DSC6111HI2A-PROGRAMMABLE
Hersteller: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
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DSC6011CE2A-PROGRAMMABLE DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf
DSC6011CE2A-PROGRAMMABLE
Hersteller: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
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DSC6011HI2A-PROGRAMMABLE DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf
DSC6011HI2A-PROGRAMMABLE
Hersteller: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
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DSC6112HI2A-PROGRAMMABLE 20005624B.pdf
DSC6112HI2A-PROGRAMMABLE
Hersteller: Microchip Technology
Description: MEMS OSC PROG XO CMOS 1.71V
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3258UPC32IXS
3258UPC32IXS
Hersteller: Microchip Technology
Description: SMARTRAID ULTRA 3258P-32I /E SIN
Packaging: Bulk
Interface: PCI Express
Type: RAID Adapter
Part Status: Active
Number of Ports: 32
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Anzahl Preis
1+3731.41 EUR
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25LC320A-H/SN16KVAO 25LC080C-080D-160C-160D-320A-640A-128-256-20002131D.pdf
25LC320A-H/SN16KVAO
Hersteller: Microchip Technology
Description: IC EEPROM 32KBIT SPI 10MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 150°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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JANTXV2N3879P
Hersteller: Microchip Technology
Description: POWER BJT
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2N3879A
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 400mA, 4A
Current - Collector Cutoff (Max): 25mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 75 V
Power - Max: 35 W
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2N4301
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: NPN
Supplier Device Package: TO-61
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 87 W
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MSCSM120AM042D3AG MSCSM120AM042D3AG-SiC-MOSFET-module-DS00004612.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 495A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Part Status: Active
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VCD2-203-44M7360000 VCD2(XO)100.pdf
Hersteller: Microchip Technology
Description: VCD2-203-44M7360000
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.567" L x 0.378" W (14.40mm x 9.60mm)
Mounting Type: Surface Mount
Output: PECL
Type: XO (Standard)
Current - Supply (Max): 100mA
Height - Seated (Max): 0.217" (5.50mm)
Part Status: Active
Frequency: 44.736 MHz
Base Resonator: Crystal
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MSCSM120DAM31CTBL1NG MSCSM120DAM31CTBL1NG.pdf
MSCSM120DAM31CTBL1NG
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SBD-BL1
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Power Dissipation (Max): 310W
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
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Anzahl Preis
1+188.78 EUR
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MSCSM170HM23CT3AG 00003953A.pdf
MSCSM170HM23CT3AG
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1700V 124A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 602W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V
Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 5mA
Part Status: Active
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MSCSM170TLM15CAG
MSCSM170TLM15CAG
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1700V 179A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 843W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 179A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 1000V
Rds On (Max) @ Id, Vgs: 15mOhm @ 90A, 20V
Gate Charge (Qg) (Max) @ Vgs: 534nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 7.5mA
Supplier Device Package: SP6C
Part Status: Active
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MSCSM170AM11CT3AG 00003931A.pdf
MSCSM170AM11CT3AG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1700V 240A
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.14kW (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 10mA
Part Status: Active
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MSCSM170TLM11CAG
MSCSM170TLM11CAG
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1700V 238A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Three Level Inverter)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1114W (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
Vgs(th) (Max) @ Id: 3.2V @ 10mA
Supplier Device Package: SP6C
Part Status: Active
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1N4704 5827-1n4678-4717-datasheet
Hersteller: Microchip Technology
Description: DIODE ZENER
Produkt ist nicht verfügbar
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1N4704UR-1 124397-lds-0240-1-datasheet
Hersteller: Microchip Technology
Description: DIODE ZENER
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1N4704/TR 5827-1n4678-4717-datasheet
1N4704/TR
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Produkt ist nicht verfügbar
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PIC18F23K22T-I/SS PIC18(L)F2X-4XK22-Data-Sheet-40001412H.pdf
PIC18F23K22T-I/SS
Hersteller: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 8KB (4K x 16)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 19x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
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PIC18F23K22T-I/SS PIC18(L)F2X-4XK22-Data-Sheet-40001412H.pdf
PIC18F23K22T-I/SS
Hersteller: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 28SSOP
Packaging: Cut Tape (CT)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 8KB (4K x 16)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 19x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 24
DigiKey Programmable: Not Verified
auf Bestellung 1095 Stücke:
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5+4.14 EUR
25+3.81 EUR
100+3.46 EUR
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MSMCJ130A rf01001_rev_b_final-pd-000307351.pdf
MSMCJ130A
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MSMBJSAC6.0 123594-msmbjsac5-0-thru-msmbjsac75-e3-datasheet
MSMBJSAC6.0
Hersteller: Microchip Technology
Description: TVS DIODE 6VWM 11.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 41A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.9V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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MSMBJSAC6.0E3/TR 123594-msmbjsac5-0-thru-msmbjsac75-e3-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 6VWM 11.2VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 41A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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MSMBJSAC6.0/TR 123594-msmbjsac5-0-thru-msmbjsac75-e3-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 6VWM 11.2VC SMBJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 41A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: SMBJ (DO-214AA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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MSMBJSAC6.0E3 123594-msmbjsac5-0-thru-msmbjsac75-e3-datasheet
MSMBJSAC6.0E3
Hersteller: Microchip Technology
Description: TVS DIODE 6VWM 11.2VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 41A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AA (SMBJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.9V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Grade: Military
Qualification: MIL-PRF-19500
auf Bestellung 391 Stücke:
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5+3.75 EUR
100+3.46 EUR
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OX-221-9102-49M152
OX-221-9102-49M152
Hersteller: Microchip Technology
Description: OX-221-9102-49M152
Packaging: Tape & Reel (TR)
Package / Case: 7-SMD, No Lead
Size / Dimension: 1.000" L x 0.866" W (25.40mm x 22.00mm)
Mounting Type: Surface Mount
Output: LVCMOS
Type: OCXO
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±5ppb
Voltage - Supply: 3.3V
Current - Supply (Max): 700mA
Height - Seated (Max): 0.486" (12.35mm)
Frequency: 49.152 MHz
Base Resonator: Crystal
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OX-221-9102-49M152
OX-221-9102-49M152
Hersteller: Microchip Technology
Description: OX-221-9102-49M152
Packaging: Cut Tape (CT)
Package / Case: 7-SMD, No Lead
Size / Dimension: 1.000" L x 0.866" W (25.40mm x 22.00mm)
Mounting Type: Surface Mount
Output: LVCMOS
Type: OCXO
Operating Temperature: -40°C ~ 85°C
Frequency Stability: ±5ppb
Voltage - Supply: 3.3V
Current - Supply (Max): 700mA
Height - Seated (Max): 0.486" (12.35mm)
Frequency: 49.152 MHz
Base Resonator: Crystal
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1+176.39 EUR
25+84.07 EUR
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MCP33111D-10T-I/MN
MCP33111D-10T-I/MN
Hersteller: Microchip Technology
Description: IC ADC 12BIT SAR 10TDFN
Produkt ist nicht verfügbar
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MCP33121D-10-I/MN
MCP33121D-10-I/MN
Hersteller: Microchip Technology
Description: IC ADC 14BIT SAR 10TDFN
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MCP33121D-10T-I/MN
MCP33121D-10T-I/MN
Hersteller: Microchip Technology
Description: IC ADC 14BIT SAR 10TDFN
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MCP33131D-10T-I/MN
MCP33131D-10T-I/MN
Hersteller: Microchip Technology
Description: IC ADC 16BIT SAR 10TDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Mounting Type: Surface Mount
Number of Bits: 16
Configuration: ADC
Data Interface: SPI
Reference Type: External
Operating Temperature: -40°C ~ 85°C
Voltage - Supply, Analog: 1.7V ~ 1.9V
Voltage - Supply, Digital: 1.7V ~ 5.5V
Sampling Rate (Per Second): 1M
Input Type: Differential, Pseudo-Differential, Single Ended
Number of Inputs: 1
Supplier Device Package: 10-TDFN (3x3)
Architecture: SAR
Ratio - S/H:ADC: 0:1
Grade: Automotive
Part Status: Active
Number of A/D Converters: 1
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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JANTXV1N6068A
Hersteller: Microchip Technology
Description: TVS DIODE 145VWM 245VC DO13
Produkt ist nicht verfügbar
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JANTX1N6068A/TR 8923-lds-0097-datasheet
JANTX1N6068A/TR
Hersteller: Microchip Technology
Description: TVS DIODE 145VWM 245VC DO13
Produkt ist nicht verfügbar
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JAN1N6068A
JAN1N6068A
Hersteller: Microchip Technology
Description: TVS DIODE 145VWM 245VC DO13
Packaging: Bulk
Package / Case: DO-202AA, DO-13, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-13 (DO-202AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 245V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/507
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JAN1N6068A/TR 8923-lds-0097-datasheet
JAN1N6068A/TR
Hersteller: Microchip Technology
Description: TVS DIODE 145VWM 245VC DO13
Produkt ist nicht verfügbar
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JANTXV1N6068A/TR 8923-lds-0097-datasheet
JANTXV1N6068A/TR
Hersteller: Microchip Technology
Description: TVS DIODE 145VWM 245VC DO13
Produkt ist nicht verfügbar
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1N6068A/TR 8923-lds-0097-datasheet
1N6068A/TR
Hersteller: Microchip Technology
Description: TVS DIODE 145VWM 245VC DO13
Packaging: Tape & Reel (TR)
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-13
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 245V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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2N4348
Hersteller: Microchip Technology
Description: POWER BJT
Produkt ist nicht verfügbar
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MCP3423T-E/UN 22088c.pdf
MCP3423T-E/UN
Hersteller: Microchip Technology
Description: IC ADC 18BIT SIGMA-DELTA 10MSOP
Packaging: Tape & Reel (TR)
Features: PGA, Selectable Address
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Bits: 18
Configuration: MUX-PGA-ADC
Data Interface: I2C
Reference Type: Internal
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 2.7V ~ 5.5V
Voltage - Supply, Digital: 2.7V ~ 5.5V
Sampling Rate (Per Second): 3.75
Input Type: Differential
Number of Inputs: 2
Supplier Device Package: 10-MSOP
Architecture: Sigma-Delta
Part Status: Active
Number of A/D Converters: 1
Produkt ist nicht verfügbar
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MCP3423T-E/UN 22088c.pdf
MCP3423T-E/UN
Hersteller: Microchip Technology
Description: IC ADC 18BIT SIGMA-DELTA 10MSOP
Packaging: Cut Tape (CT)
Features: PGA, Selectable Address
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Bits: 18
Configuration: MUX-PGA-ADC
Data Interface: I2C
Reference Type: Internal
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Analog: 2.7V ~ 5.5V
Voltage - Supply, Digital: 2.7V ~ 5.5V
Sampling Rate (Per Second): 3.75
Input Type: Differential
Number of Inputs: 2
Supplier Device Package: 10-MSOP
Architecture: Sigma-Delta
Part Status: Active
Number of A/D Converters: 1
auf Bestellung 2155 Stücke:
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Anzahl Preis
3+6.11 EUR
25+5.09 EUR
100+4.6 EUR
Mindestbestellmenge: 3
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MIC4414YFT-TR MIC4414-15.pdf
MIC4414YFT-TR
Hersteller: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 4TQFN
Packaging: Tape & Reel (TR)
Package / Case: 4-UQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 4-TQFN (1.2x1.2)
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
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MIC4414YFT-TR MIC4414-15.pdf
MIC4414YFT-TR
Hersteller: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 4TQFN
Packaging: Cut Tape (CT)
Package / Case: 4-UQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 4-TQFN (1.2x1.2)
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Part Status: Active
DigiKey Programmable: Not Verified
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Anzahl Preis
13+1.36 EUR
25+1.14 EUR
100+1.1 EUR
Mindestbestellmenge: 13
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CDLL5819/TR 1N5818UR-1-1N5819UR-1-1N6761UR-1-CDLL-Variants.pdf
CDLL5819/TR
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AA
Packaging: Tape & Reel (TR)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
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Anzahl Preis
140+7.35 EUR
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CDLL5819/TR 1N5818UR-1-1N5819UR-1-1N6761UR-1-CDLL-Variants.pdf
CDLL5819/TR
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 45V 1A DO213AA
Packaging: Cut Tape (CT)
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 70pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
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Anzahl Preis
3+8.66 EUR
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1N6864US 131998-lds-0303-1-datasheet
1N6864US
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 80V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Current - Reverse Leakage @ Vr: 150 µA @ 80 V
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Anzahl Preis
1+231.46 EUR
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SMAJ15CAE3/TR13 SMAJ5.0-170CA%2Ce3.pdf
SMAJ15CAE3/TR13
Hersteller: Microchip Technology
Description: TVS DIODE 15VWM 24.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.6A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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SMAJ15CAE3/TR13 SMAJ5.0-170CA%2Ce3.pdf
SMAJ15CAE3/TR13
Hersteller: Microchip Technology
Description: TVS DIODE 15VWM 24.4VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.6A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
auf Bestellung 2613 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
Mindestbestellmenge: 32
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EV92X77A
EV92X77A
Hersteller: Microchip Technology
Description: ATEVK-MXT144UD-A EVAL KIT
Packaging: Bulk
Function: Touch Screen Controller
Type: Interface
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: MXT144UD
Secondary Attributes: I2C Interface(s)
Embedded: No
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+1398.88 EUR
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