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MSCSM120AM042T6LIAG MSCSM120AM042T6LIAG Microchip Technology MSCSM120AM042T6LIAG-SiC-MOSFET-module-DS00004631.pdf Description: MOSFET 2N-CH 1200V 495A
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 2031W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
Produkt ist nicht verfügbar
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MSCSM70HM038AG Microchip Technology MSCSM70HM038AG-SiC-MOSFET-module-DS00004602.pdf Description: SIC 4N-CH 700V 464A
Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 1.277kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 16mA
Produkt ist nicht verfügbar
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MSCSM120HM083AG Microchip Technology MSCSM120HM083AG-SiC-MOSFET-module-DS00004648.pdf Description: MOSFET 4N-CH 1200V 251A
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 1.042kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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MSCSM120HM063AG Microchip Technology MSCSM120HM063AG-SiC-MOSFET-module-DS00004646.pdf Description: MOSFET 4N-CH 1200V 333A
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 873W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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MSCSM120AM11T3AG Microchip Technology MSCSM120AM11T3AG-SiC-MOSFET-module-DS00004577.pdf Description: PM-MOSFET-SIC-SP3F
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 1.067kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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MSCSM70AM07T3AG Microchip Technology MSCSM70AM07T3AG-SiC-MOSFET-module-DS00004606.pdf Description: MOSFET 2N-CH 700V 353A
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 988W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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MSCSM70AM10T3AG Microchip Technology MSCSM70AM10T3AG-SiC-MOSFET-module-DS00004608.pdf Description: MOSFET 2N-CH 700V 241A
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 690W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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MSCSM120HM16T3AG Microchip Technology MSCSM120HM16T3AG-SiC-MOSFET-module-DS00004613.pdf Description: SIC 4N-CH 1200V 173A
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 745W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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MSCSM70AM19T1AG MSCSM70AM19T1AG Microchip Technology MSCSM70AM19T1AG-SiC-MOSFET-module-DS00004605.pdf Description: MOSFET 2N-CH 700V 124A
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 365W (Tc)
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MSCSM120AM31T1AG Microchip Technology MSCSM120AM31T1AG-SiC-MOSFET-module-DS00004618.pdf Description: SIC 2N-CH 1200V 89A
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 395W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
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MSCSM70AM025T6AG Microchip Technology MSCSM70AM025T6AG-SiC-MOSFET-module-DS00004628.pdf Description: PM-MOSFET-SIC-SP6C
Part Status: Active
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 1.882kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Vgs(th) (Max) @ Id: 2.4V @ 24mA
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MSCSM70AM025T6LIAG Microchip Technology MSCSM70AM025T6LIAG-SiC-MOSFET-module-DS00004627.pdf Description: PM-MOSFET-SIC-SP6L1
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 1.882kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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MSCSM120AM03T6LIAG Microchip Technology MSCSM120AM03T6LIAG-SiC-MOSFET-module-DS00004570.pdf Description: MOSFET 2N-CH 1200V 805A
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 30mA
Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 3.215kW (Tc)
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MSCSM120HM31T3AG Microchip Technology MSCSM120HM31T3AG-SiC-MOSFET-module-DS00004643.pdf Description: SIC 4N-CH 1200V 89A
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 395W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
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MSCSM120AM027T6AG Microchip Technology MSCSM120AM027T6AG-SiC-MOSFET-module-DS00004630.pdf Description: PM-MOSFET-SIC-SP6C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 2.97kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
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MSCSM70HM05AG Microchip Technology MSCSM70HM05AG-SiC-MOSFET-module-DS00004601.pdf Description: PM-MOSFET-SIC-SP6C
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 966W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 12mA
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MSCSM70TAM10TPAG Microchip Technology MSCSM70TAM10TPAG-SiC-MOSFET-module-DS00004626.pdf Description: PM-MOSFET-SIC-SP6P
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 674W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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MSCSM120TAM11TPAG Microchip Technology MSCSM120TAM11TPAG-SiC-MOSFET-module-DS00004637.pdf Description: PM-MOSFET-SIC-SP6P
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 1.042kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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DSC6083CI2A-307K000T DSC6083CI2A-307K000T Microchip Technology DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf Description: MEMS OSC XO 307.0000KHZ CMOS SMD
Supplier Device Package: 4-VDFN (3.2x2.5)
Base Resonator: MEMS
Frequency: 307 kHz
Part Status: Obsolete
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 1.3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Package / Case: 4-VDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MIC4685-5.0BR TR MIC4685-5.0BR TR Microchip Technology mic4685.pdf Description: IC REG BUCK 5V 3A 7SPAK
Packaging: Tape & Reel (TR)
Package / Case: SPak-7 (7 leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Voltage - Input (Max): 30V
Topology: Buck
Supplier Device Package: 7-SPAK
Synchronous Rectifier: No
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Produkt ist nicht verfügbar
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CDLL4976 Microchip Technology Description: VOLTAGE REGULATOR
Packaging: Bulk
Part Status: Active
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MXPLAD15KP130A MXPLAD15KP130A Microchip Technology mplad15kp.pdf Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXPLAD15KP130Ae3 Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 130VWM 209VC PLAD
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MXLPLAD15KP130Ae3 Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 130VWM 209VC PLAD
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MPLAD15KP130A/TR MPLAD15KP130A/TR Microchip Technology mplad15kp.pdf Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP130A MAPLAD15KP130A Microchip Technology mplad15kp.pdf Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MA15KP130Ae3 MA15KP130Ae3 Microchip Technology rf01011_m15kp_rev_e.pdf Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAPLAD15KP130Ae3 MAPLAD15KP130Ae3 Microchip Technology mplad15kp.pdf Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXLPLAD15KP130A Microchip Technology 9522-mplad15kp-datasheet Description: TVS DIODE 130VWM 209VC PLAD
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M15KP130Ae3 M15KP130Ae3 Microchip Technology M15KP22A%E2%80%93MXL15KP280CA%28e3%29.pdf Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MA15KP130A MA15KP130A Microchip Technology rf01011_m15kp_rev_e.pdf Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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AT87F52-24PI AT87F52-24PI Microchip Technology AT87F52.pdf Description: IC MCU 8BIT 8KB FLASH 40DIP
DigiKey Programmable: Not Verified
Number of I/O: 32
Supplier Device Package: 40-PDIP
Connectivity: UART/USART
Voltage - Supply (Vcc/Vdd): 4V ~ 6V
Core Size: 8-Bit
Core Processor: 8051
Program Memory Type: OTP Quick FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 24MHz
Mounting Type: Through Hole
Package / Case: 40-DIP (0.600", 15.24mm)
Packaging: Tube
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11AA040-I/S16K Microchip Technology 22067J.pdf Description: IC EEPROM 4KBIT SGL WIRE DIE
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: Single Wire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: Die
Memory Format: EEPROM
Clock Frequency: 100 kHz
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11AA040-I/WF16K Microchip Technology 22067J.pdf Description: IC EEPROM 4KBIT SGL WIRE DIE
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: Single Wire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: Die
Memory Format: EEPROM
Clock Frequency: 100 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tray
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78160GNP Microchip Technology Description: RF MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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78161GNP Microchip Technology Description: RF MOSFET
Packaging: Bulk
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SAMA7G54-V/4HB SAMA7G54-V/4HB Microchip Technology SAMA7G5-Series-Data-Sheet-DS60001765.pdf Description: IC MPU SAMA7G5 1GHZ 343TFBGA
Part Status: Active
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Display & Interface Controllers: LCD
Graphics Acceleration: No
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Co-Processors/DSP: Multimedia; NEON™ MPE
Number of Cores/Bus Width: 1 Core, 32-Bit
USB: USB 2.0 PHY (3), USB Type-C (2)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
Supplier Device Package: 343-TFBGA (14x14)
Additional Interfaces: EBI, I2C, SPI
Voltage - I/O: 3.3V, 5V
Core Processor: ARM® Cortex®-A7
Operating Temperature: -40°C ~ 105°C (TJ)
Speed: 1GHz
Mounting Type: Surface Mount
Package / Case: 343-TFBGA
Packaging: Tray
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DSA612RI1A-01V0VAO Microchip Technology Description: IC CLOCK GENERATOR 6VFLGA
Packaging: Tube
Package / Case: 6-VFLGA
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 100MHz
Type: Clock Generator
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 3.63V
Ratio - Input:Output: 0:2
Differential - Input:Output: No/No
Supplier Device Package: 6-VFLGA (2.5x2)
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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JANTX1N4245 JANTX1N4245 Microchip Technology 123513-lds-0191-datasheet Description: DIODE STANDARD 200V 1A AXIAL
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/286
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
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JANTX1N3646 Microchip Technology 10953-lds-0266-datasheet Description: DIODE GP 1.75KV 250MA AXIAL
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JANTX1N3612 JANTX1N3612 Microchip Technology 1N3611-13%2C1N3614%2C1N3957.pdf Description: DIODE STANDARD 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/228
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JANTXV1N5533D-1 JANTXV1N5533D-1 Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 13V 500MW DO204AH
Qualification: MIL-PRF-19500/437
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
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VCC6-119-178M018970 Microchip Technology VCC6.pdf Description: DIFFERENTIAL XO +3.3 VDC +/-5% L
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JANTXV1N5772 JANTXV1N5772 Microchip Technology 10048-msc1013-datasheet Description: TVS DIODE 10CFLATPACK
Applications: Ethernet
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-CFlatPack
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Unidirectional Channels: 8
Supplier Device Package: 10-CFlatPack
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1N5772 Microchip Technology 10048-msc1013-datasheet Description: TVS DIODE 10CFLATPACK
Packaging: Bulk
Package / Case: 10-CFlatPack
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 10-CFlatPack
Unidirectional Channels: 8
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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JANTX1N5772 JANTX1N5772 Microchip Technology Description: TVS DIODE 10CFLATPACK
Packaging: Bulk
Package / Case: 10-CFlatPack
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 10-CFlatPack
Unidirectional Channels: 8
Power Line Protection: No
Part Status: Active
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1N5774 Microchip Technology 10049-msc1014-datasheet Description: TVS DIODE 14FLATPACK
Part Status: Active
Power Line Protection: No
Unidirectional Channels: 8
Supplier Device Package: 14-Flatpack
Applications: Ethernet
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 14-Flatpack
Packaging: Bulk
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1N5768 Microchip Technology 122687-lds-0078-pdf Description: TVS DIODE 10CFLATPACK
Part Status: Active
Power Line Protection: No
Unidirectional Channels: 8
Supplier Device Package: 10-CFlatPack
Applications: Ethernet
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-CFlatPack
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5770 Microchip Technology 10047-msc1012-pdf Description: TVS DIODE 10CFLATPACK
Part Status: Active
Power Line Protection: No
Unidirectional Channels: 8
Supplier Device Package: 10-CFlatPack
Applications: Ethernet
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-CFlatPack
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV1N5774 Microchip Technology 10049-msc1014-datasheet Description: TVS DIODE 14CFLATPACK
Applications: Ethernet
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 14-CFlatPack
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Unidirectional Channels: 8
Supplier Device Package: 14-CFlatPack
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JAN1N5768 Microchip Technology Description: DIODE GEN PURP 300MA 10CFLATPACK
Current - Reverse Leakage @ Vr: 100 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 500 mA
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: 10-CFlatPack
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-CFlatPack
Packaging: Bulk
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JAN1N3042BUR-1 JAN1N3042BUR-1 Microchip Technology 5787-1n3016bur-datasheet Description: DIODE ZENER 82V 1W DO213AB
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R21130 Microchip Technology Description: STD RECTIFIER
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EV72J15A EV72J15A Microchip Technology EV72J15A.pdf Description: PIC16F17146 CURIOSITY NANO BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), Accessories
Core Processor: PIC
Utilized IC / Part: PIC16F17146
Platform: Curiosity Nano
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EV40E67A EV40E67A Microchip Technology EV40E67A.pdf Description: SAM9X60-CURIOSITY
Platform: Curiosity
Utilized IC / Part: SAM9X60
Core Processor: ARM926EJ-S
Contents: Board(s), Cable(s)
Type: MPU
Mounting Type: Fixed
Packaging: Box
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EV12U44A EV12U44A Microchip Technology EV12U44A.pdf Description: PIC32CM LS00 CURIOSITY PRO EVALU
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M23
Board Type: Evaluation Platform
Utilized IC / Part: PIC32CM LS00
Platform: PIC32CM LS00 Curiosity Pro
Part Status: Active
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EV76R77A EV76R77A Microchip Technology EV76R77A.pdf Description: PIC32CM LS60 CURIOSITY PRO EVALU
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M23
Board Type: Evaluation Platform
Utilized IC / Part: PIC32CM LS60
Platform: PIC32CM LS60 Curiosity Pro
Part Status: Active
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EV80P12A EV80P12A Microchip Technology EV80P12A.pdf Description: PIC32CM LE00 CURIOSITY PRO EVALU
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M23
Board Type: Evaluation Platform
Utilized IC / Part: PIC32CM LE00
Platform: PIC32CM LE00 Curiosity Pro
Part Status: Active
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MCP6234-E/STVAO MCP6234-E/STVAO Microchip Technology 20001881G%20MCP6231-20%20uA%20300%20kHz%20Rail-to-Rail%20Op%20Amp.pdf Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
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MCP6234T-E/STVAO MCP6234T-E/STVAO Microchip Technology 20001881G%20MCP6231-20%20uA%20300%20kHz%20Rail-to-Rail%20Op%20Amp.pdf Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
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MSCSM120AM042T6LIAG MSCSM120AM042T6LIAG-SiC-MOSFET-module-DS00004631.pdf
MSCSM120AM042T6LIAG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 495A
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 18mA
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 2031W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tube
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MSCSM70HM038AG MSCSM70HM038AG-SiC-MOSFET-module-DS00004602.pdf
Hersteller: Microchip Technology
Description: SIC 4N-CH 700V 464A
Gate Charge (Qg) (Max) @ Vgs: 860nC @ 20V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 160A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 464A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 1.277kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 16mA
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MSCSM120HM083AG MSCSM120HM083AG-SiC-MOSFET-module-DS00004648.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1200V 251A
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 1.042kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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MSCSM120HM063AG MSCSM120HM063AG-SiC-MOSFET-module-DS00004646.pdf
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 1200V 333A
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 80A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 333A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 873W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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MSCSM120AM11T3AG MSCSM120AM11T3AG-SiC-MOSFET-module-DS00004577.pdf
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP3F
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 1.067kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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MSCSM70AM07T3AG MSCSM70AM07T3AG-SiC-MOSFET-module-DS00004606.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 700V 353A
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 988W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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MSCSM70AM10T3AG MSCSM70AM10T3AG-SiC-MOSFET-module-DS00004608.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 700V 241A
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 690W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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MSCSM120HM16T3AG MSCSM120HM16T3AG-SiC-MOSFET-module-DS00004613.pdf
Hersteller: Microchip Technology
Description: SIC 4N-CH 1200V 173A
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 745W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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MSCSM70AM19T1AG MSCSM70AM19T1AG-SiC-MOSFET-module-DS00004605.pdf
MSCSM70AM19T1AG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 700V 124A
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 365W (Tc)
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1+169.07 EUR
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MSCSM120AM31T1AG MSCSM120AM31T1AG-SiC-MOSFET-module-DS00004618.pdf
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 89A
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 395W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
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MSCSM70AM025T6AG MSCSM70AM025T6AG-SiC-MOSFET-module-DS00004628.pdf
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Part Status: Active
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 1.882kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Vgs(th) (Max) @ Id: 2.4V @ 24mA
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MSCSM70AM025T6LIAG MSCSM70AM025T6LIAG-SiC-MOSFET-module-DS00004627.pdf
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6L1
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 24mA
Gate Charge (Qg) (Max) @ Vgs: 1290nC @ 20V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 240A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 689A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 1.882kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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MSCSM120AM03T6LIAG MSCSM120AM03T6LIAG-SiC-MOSFET-module-DS00004570.pdf
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 805A
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 30mA
Gate Charge (Qg) (Max) @ Vgs: 2320nC @ 20V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 400A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 30200pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 805A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 3.215kW (Tc)
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MSCSM120HM31T3AG MSCSM120HM31T3AG-SiC-MOSFET-module-DS00004643.pdf
Hersteller: Microchip Technology
Description: SIC 4N-CH 1200V 89A
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 395W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Produkt ist nicht verfügbar
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MSCSM120AM027T6AG MSCSM120AM027T6AG-SiC-MOSFET-module-DS00004630.pdf
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 27mA
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 2.97kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N Channel (Phase Leg)
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MSCSM70HM05AG MSCSM70HM05AG-SiC-MOSFET-module-DS00004601.pdf
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6C
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 349A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 966W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 4 N-Channel (Full Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Produkt ist nicht verfügbar
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MSCSM70TAM10TPAG MSCSM70TAM10TPAG-SiC-MOSFET-module-DS00004626.pdf
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6P
Part Status: Active
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Drain to Source Voltage (Vdss): 700V
Power - Max: 674W (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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MSCSM120TAM11TPAG MSCSM120TAM11TPAG-SiC-MOSFET-module-DS00004637.pdf
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SP6P
Part Status: Active
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Power - Max: 1.042kW (Tc)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 6 N-Channel (Phase Leg)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Produkt ist nicht verfügbar
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DSC6083CI2A-307K000T DSC60XX-Ultra-Small-Ultra-Low-Power-MEMS-Oscillator-DS20005625C.pdf
DSC6083CI2A-307K000T
Hersteller: Microchip Technology
Description: MEMS OSC XO 307.0000KHZ CMOS SMD
Supplier Device Package: 4-VDFN (3.2x2.5)
Base Resonator: MEMS
Frequency: 307 kHz
Part Status: Obsolete
Height - Seated (Max): 0.035" (0.90mm)
Current - Supply (Max): 1.3mA (Typ)
Ratings: AEC-Q100
Voltage - Supply: 1.71V ~ 3.63V
Frequency Stability: ±25ppm
Operating Temperature: -40°C ~ 85°C
Type: XO (Standard)
Output: CMOS
Mounting Type: Surface Mount
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Package / Case: 4-VDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MIC4685-5.0BR TR mic4685.pdf
MIC4685-5.0BR TR
Hersteller: Microchip Technology
Description: IC REG BUCK 5V 3A 7SPAK
Packaging: Tape & Reel (TR)
Package / Case: SPak-7 (7 leads + Tab)
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Voltage - Input (Max): 30V
Topology: Buck
Supplier Device Package: 7-SPAK
Synchronous Rectifier: No
Voltage - Input (Min): 4V
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
Produkt ist nicht verfügbar
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CDLL4976
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MXPLAD15KP130A mplad15kp.pdf
MXPLAD15KP130A
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MXPLAD15KP130Ae3 9522-mplad15kp-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
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MXLPLAD15KP130Ae3 9522-mplad15kp-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
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MPLAD15KP130A/TR mplad15kp.pdf
MPLAD15KP130A/TR
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Tape & Reel (TR)
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MAPLAD15KP130A mplad15kp.pdf
MAPLAD15KP130A
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MA15KP130Ae3 rf01011_m15kp_rev_e.pdf
MA15KP130Ae3
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MAPLAD15KP130Ae3 mplad15kp.pdf
MAPLAD15KP130Ae3
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 71A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MXLPLAD15KP130A 9522-mplad15kp-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC PLAD
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M15KP130Ae3 M15KP22A%E2%80%93MXL15KP280CA%28e3%29.pdf
M15KP130Ae3
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MA15KP130A rf01011_m15kp_rev_e.pdf
MA15KP130A
Hersteller: Microchip Technology
Description: TVS DIODE 130VWM 209VC DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 72A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-204AR
Unidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 209V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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AT87F52-24PI AT87F52.pdf
AT87F52-24PI
Hersteller: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 40DIP
DigiKey Programmable: Not Verified
Number of I/O: 32
Supplier Device Package: 40-PDIP
Connectivity: UART/USART
Voltage - Supply (Vcc/Vdd): 4V ~ 6V
Core Size: 8-Bit
Core Processor: 8051
Program Memory Type: OTP Quick FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C
RAM Size: 256 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 24MHz
Mounting Type: Through Hole
Package / Case: 40-DIP (0.600", 15.24mm)
Packaging: Tube
Produkt ist nicht verfügbar
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11AA040-I/S16K 22067J.pdf
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT SGL WIRE DIE
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: Single Wire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: Die
Memory Format: EEPROM
Clock Frequency: 100 kHz
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11AA040-I/WF16K 22067J.pdf
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT SGL WIRE DIE
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: Single Wire
Write Cycle Time - Word, Page: 5ms
Part Status: Active
Supplier Device Package: Die
Memory Format: EEPROM
Clock Frequency: 100 kHz
Technology: EEPROM
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tray
Produkt ist nicht verfügbar
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78160GNP
Hersteller: Microchip Technology
Description: RF MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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78161GNP
Hersteller: Microchip Technology
Description: RF MOSFET
Packaging: Bulk
Produkt ist nicht verfügbar
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SAMA7G54-V/4HB SAMA7G5-Series-Data-Sheet-DS60001765.pdf
SAMA7G54-V/4HB
Hersteller: Microchip Technology
Description: IC MPU SAMA7G5 1GHZ 343TFBGA
Part Status: Active
Security Features: ARM TZ, Cryptography, 3DES, AES, SHA1, SHA-256, SHA-384, SHA-512
Display & Interface Controllers: LCD
Graphics Acceleration: No
RAM Controllers: DDR2, DDR3, DDR3L, LPDDR2, LPDDR3
Co-Processors/DSP: Multimedia; NEON™ MPE
Number of Cores/Bus Width: 1 Core, 32-Bit
USB: USB 2.0 PHY (3), USB Type-C (2)
Ethernet: 10/100Mbps (1), 10/100/1000Mbps (1)
Supplier Device Package: 343-TFBGA (14x14)
Additional Interfaces: EBI, I2C, SPI
Voltage - I/O: 3.3V, 5V
Core Processor: ARM® Cortex®-A7
Operating Temperature: -40°C ~ 105°C (TJ)
Speed: 1GHz
Mounting Type: Surface Mount
Package / Case: 343-TFBGA
Packaging: Tray
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AnzahlPreis
1+22.99 EUR
25+21.08 EUR
100+19.09 EUR
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DSA612RI1A-01V0VAO
Hersteller: Microchip Technology
Description: IC CLOCK GENERATOR 6VFLGA
Packaging: Tube
Package / Case: 6-VFLGA
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 100MHz
Type: Clock Generator
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 3.63V
Ratio - Input:Output: 0:2
Differential - Input:Output: No/No
Supplier Device Package: 6-VFLGA (2.5x2)
PLL: Yes
Divider/Multiplier: Yes/No
Part Status: Active
Number of Circuits: 1
DigiKey Programmable: Not Verified
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JANTX1N4245 123513-lds-0191-datasheet
JANTX1N4245
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 1A AXIAL
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/286
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
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JANTX1N3646 10953-lds-0266-datasheet
Hersteller: Microchip Technology
Description: DIODE GP 1.75KV 250MA AXIAL
Produkt ist nicht verfügbar
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JANTX1N3612 1N3611-13%2C1N3614%2C1N3957.pdf
JANTX1N3612
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/228
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AnzahlPreis
3+8.2 EUR
100+7.61 EUR
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JANTXV1N5533D-1 123956-lds-0037-1-datasheet
JANTXV1N5533D-1
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 500MW DO204AH
Qualification: MIL-PRF-19500/437
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Grade: Military
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 13 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±1%
Packaging: Bulk
Produkt ist nicht verfügbar
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VCC6-119-178M018970 VCC6.pdf
Hersteller: Microchip Technology
Description: DIFFERENTIAL XO +3.3 VDC +/-5% L
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JANTXV1N5772 10048-msc1013-datasheet
JANTXV1N5772
Hersteller: Microchip Technology
Description: TVS DIODE 10CFLATPACK
Applications: Ethernet
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-CFlatPack
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Unidirectional Channels: 8
Supplier Device Package: 10-CFlatPack
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1N5772 10048-msc1013-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 10CFLATPACK
Packaging: Bulk
Package / Case: 10-CFlatPack
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 10-CFlatPack
Unidirectional Channels: 8
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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JANTX1N5772
JANTX1N5772
Hersteller: Microchip Technology
Description: TVS DIODE 10CFLATPACK
Packaging: Bulk
Package / Case: 10-CFlatPack
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Ethernet
Supplier Device Package: 10-CFlatPack
Unidirectional Channels: 8
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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1N5774 10049-msc1014-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 14FLATPACK
Part Status: Active
Power Line Protection: No
Unidirectional Channels: 8
Supplier Device Package: 14-Flatpack
Applications: Ethernet
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 14-Flatpack
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5768 122687-lds-0078-pdf
Hersteller: Microchip Technology
Description: TVS DIODE 10CFLATPACK
Part Status: Active
Power Line Protection: No
Unidirectional Channels: 8
Supplier Device Package: 10-CFlatPack
Applications: Ethernet
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-CFlatPack
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5770 10047-msc1012-pdf
Hersteller: Microchip Technology
Description: TVS DIODE 10CFLATPACK
Part Status: Active
Power Line Protection: No
Unidirectional Channels: 8
Supplier Device Package: 10-CFlatPack
Applications: Ethernet
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 10-CFlatPack
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV1N5774 10049-msc1014-datasheet
Hersteller: Microchip Technology
Description: TVS DIODE 14CFLATPACK
Applications: Ethernet
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 14-CFlatPack
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Unidirectional Channels: 8
Supplier Device Package: 14-CFlatPack
Produkt ist nicht verfügbar
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JAN1N5768
Hersteller: Microchip Technology
Description: DIODE GEN PURP 300MA 10CFLATPACK
Current - Reverse Leakage @ Vr: 100 nA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 500 mA
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: 10-CFlatPack
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 40 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-CFlatPack
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N3042BUR-1 5787-1n3016bur-datasheet
JAN1N3042BUR-1
Hersteller: Microchip Technology
Description: DIODE ZENER 82V 1W DO213AB
Produkt ist nicht verfügbar
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R21130
Hersteller: Microchip Technology
Description: STD RECTIFIER
Produkt ist nicht verfügbar
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EV72J15A EV72J15A.pdf
EV72J15A
Hersteller: Microchip Technology
Description: PIC16F17146 CURIOSITY NANO BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 8-Bit
Contents: Board(s), Accessories
Core Processor: PIC
Utilized IC / Part: PIC16F17146
Platform: Curiosity Nano
auf Bestellung 95 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+16.07 EUR
Mindestbestellmenge: 2 Stücke
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EV40E67A EV40E67A.pdf
EV40E67A
Hersteller: Microchip Technology
Description: SAM9X60-CURIOSITY
Platform: Curiosity
Utilized IC / Part: SAM9X60
Core Processor: ARM926EJ-S
Contents: Board(s), Cable(s)
Type: MPU
Mounting Type: Fixed
Packaging: Box
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+150.57 EUR
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EV12U44A EV12U44A.pdf
EV12U44A
Hersteller: Microchip Technology
Description: PIC32CM LS00 CURIOSITY PRO EVALU
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M23
Board Type: Evaluation Platform
Utilized IC / Part: PIC32CM LS00
Platform: PIC32CM LS00 Curiosity Pro
Part Status: Active
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+76.84 EUR
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EV76R77A EV76R77A.pdf
EV76R77A
Hersteller: Microchip Technology
Description: PIC32CM LS60 CURIOSITY PRO EVALU
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M23
Board Type: Evaluation Platform
Utilized IC / Part: PIC32CM LS60
Platform: PIC32CM LS60 Curiosity Pro
Part Status: Active
auf Bestellung 9 Stücke:
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1+76.84 EUR
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EV80P12A EV80P12A.pdf
EV80P12A
Hersteller: Microchip Technology
Description: PIC32CM LE00 CURIOSITY PRO EVALU
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M23
Board Type: Evaluation Platform
Utilized IC / Part: PIC32CM LE00
Platform: PIC32CM LE00 Curiosity Pro
Part Status: Active
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+76.84 EUR
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MCP6234-E/STVAO 20001881G%20MCP6231-20%20uA%20300%20kHz%20Rail-to-Rail%20Op%20Amp.pdf
MCP6234-E/STVAO
Hersteller: Microchip Technology
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
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MCP6234T-E/STVAO 20001881G%20MCP6231-20%20uA%20300%20kHz%20Rail-to-Rail%20Op%20Amp.pdf
MCP6234T-E/STVAO
Hersteller: Microchip Technology
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
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