Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (338323) > Seite 1579 nach 5639
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MART100KP250A | Microchip Technology |
Description: TVS DIODE 250VWM 493VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 250V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 278V Voltage - Clamping (Max) @ Ipp: 493V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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MART100KP250Ae3 | Microchip Technology |
Description: TVS DIODE 250VWM 493VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 250V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 278V Voltage - Clamping (Max) @ Ipp: 493V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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MART100KP220CA | Microchip Technology |
Description: TVS DIODE 220VWM 434VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 220V Supplier Device Package: Case 5A (DO-204AR) Bidirectional Channels: 1 Voltage - Breakdown (Min): 245V Voltage - Clamping (Max) @ Ipp: 434V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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MART100KP220CAe3 | Microchip Technology |
Description: TVS DIODE 220VWM 434VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 220V Supplier Device Package: Case 5A (DO-204AR) Bidirectional Channels: 1 Voltage - Breakdown (Min): 245V Voltage - Clamping (Max) @ Ipp: 434V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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MART100KP220Ae3 | Microchip Technology |
Description: TVS DIODE 220VWM 434VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 220V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 245V Voltage - Clamping (Max) @ Ipp: 434V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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MART100KP250CAe3 | Microchip Technology |
Description: TVS DIODE 250VWM 493VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 250V Supplier Device Package: Case 5A (DO-204AR) Bidirectional Channels: 1 Voltage - Breakdown (Min): 278V Voltage - Clamping (Max) @ Ipp: 493V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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MART100KP220A | Microchip Technology |
Description: TVS DIODE 220VWM 434VC CASE 5A Packaging: Bulk Package / Case: DO-204AR, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 220V Supplier Device Package: Case 5A (DO-204AR) Unidirectional Channels: 1 Voltage - Breakdown (Min): 245V Voltage - Clamping (Max) @ Ipp: 434V Power - Peak Pulse: 100000W (100kW) Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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1N914-1 | Microchip Technology |
Description: DIODE GEN PURP 75V 200MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA Current - Reverse Leakage @ Vr: 500 nA @ 75 V |
Produkt ist nicht verfügbar |
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PIC18LF25K40-E/ML | Microchip Technology | Description: IC MCU 8BIT 32KB FLASH 28QFN |
Produkt ist nicht verfügbar |
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MASMBJ20CA | Microchip Technology |
Description: TVS DIODE 20VWM 32.4VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 18.5A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: SMBJ (DO-214AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MXSMBJ20CA | Microchip Technology | Description: TVS DIODE 20VWM 32.4VC SMBJ |
Produkt ist nicht verfügbar |
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MASMBJ20CAe3 | Microchip Technology |
Description: TVS DIODE 20VWM 32.4VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 18.5A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: SMBJ (DO-214AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 600W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MXSMBJ20CAe3 | Microchip Technology | Description: TVS DIODE 20VWM 32.4VC SMBJ |
Produkt ist nicht verfügbar |
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DSC1121CI2-045.1580 | Microchip Technology | Description: MEMS OSC 45.158MHZ LVCMOS 25PPM |
Produkt ist nicht verfügbar |
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DSC1121CI2-045.1580T | Microchip Technology | Description: MEMS OSC 45.158MHZ LVCMOS 25PPM |
Produkt ist nicht verfügbar |
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JANS1N5418US | Microchip Technology |
Description: DIODE GEN PURP 400V 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Grade: Military Qualification: MIL-PRF-19500/411 |
Produkt ist nicht verfügbar |
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JANTX1N5418US/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 3A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 2 µA @ 400 V Grade: Military Qualification: MIL-PRF-19500/411 |
Produkt ist nicht verfügbar |
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JANTX1N5417US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
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JANTX1N5419US | Microchip Technology |
Description: DIODE GEN PURP 500V 3A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 500 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 500 V Qualification: MIL-PRF-19500/411 |
Produkt ist nicht verfügbar |
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JANS1N5418US/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 3A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Grade: Military Qualification: MIL-PRF-19500/411 |
Produkt ist nicht verfügbar |
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JANS1N5415/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
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JANTXV1N5418US | Microchip Technology |
Description: DIODE GEN PURP 400V 3A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Grade: Military Qualification: MIL-PRF-19500/411 |
Produkt ist nicht verfügbar |
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JANS1N5418/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 3A Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 165pF @ 4V Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Grade: Military Qualification: MIL-PRF-19500/411 |
Produkt ist nicht verfügbar |
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JANS1N5415 | Microchip Technology | Description: RECTIFIER DIODE |
Produkt ist nicht verfügbar |
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JAN1N5417US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
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JANS1N5417US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
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JANTXV1N5417US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
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JANS1N5417US | Microchip Technology | Description: RECTIFIER DIODE |
Produkt ist nicht verfügbar |
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JANTXV1N5415US/TR | Microchip Technology | Description: RECTIFIER UFR,FRR |
Produkt ist nicht verfügbar |
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JANTXV1N5417US | Microchip Technology | Description: DIODE GEN PURP 200V 3A D5B |
Produkt ist nicht verfügbar |
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JANTXV1N5418US/TR | Microchip Technology |
Description: DIODE GEN PURP 400V 3A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V Grade: Military Qualification: MIL-PRF-19500/411 |
Produkt ist nicht verfügbar |
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1N4454UR | Microchip Technology |
Description: DIODE GP 75V 200MA DO213AA Packaging: Bulk Package / Case: DO-213AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-213AA Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
Produkt ist nicht verfügbar |
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UM7302B | Microchip Technology |
Description: SI PPIN HERMETIC GLASS AXIAL Packaging: Tape & Reel (TR) Package / Case: Axial Diode Type: PIN - Single Capacitance @ Vr, F: 0.7pF @ 100V, 1MHz Resistance @ If, F: 3Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 200V Supplier Device Package: Axial Power Dissipation (Max): 4 W |
Produkt ist nicht verfügbar |
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VCC1-B3D-3M68640000 | Microchip Technology | Description: CMOS XO +3.3 VDC 15PF -40C TO +8 |
Produkt ist nicht verfügbar |
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VCC1-A3D-3M68400000 | Microchip Technology | Description: CMOS XO +5.0 VDC 15PF -40C TO +8 |
Produkt ist nicht verfügbar |
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VCC1-B3D-3M68600000 | Microchip Technology | Description: CMOS XO +3.3 VDC 15PF -40C TO +8 |
Produkt ist nicht verfügbar |
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MASMBJ120CAe3 | Microchip Technology |
Description: TVS DIODE 120VWM 193VC SMBJ Packaging: Bulk Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.1A Voltage - Reverse Standoff (Typ): 120V Supplier Device Package: SMBJ (DO-214AA) Bidirectional Channels: 1 Voltage - Breakdown (Min): 133V Voltage - Clamping (Max) @ Ipp: 193V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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MSMCJLCE43A | Microchip Technology | Description: TVS DIODE 43VWM 69.4VC DO214AB |
Produkt ist nicht verfügbar |
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MSMCJLCE90Ae3 | Microchip Technology | Description: TVS DIODE 90VWM 146VC DO214AB |
Produkt ist nicht verfügbar |
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MSMCJLCE24A | Microchip Technology | Description: TVS DIODE 24VWM 38.9VC DO214AB |
Produkt ist nicht verfügbar |
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JANS2N2920U | Microchip Technology | Description: PNP SMALL SIGNAL SILICON TRANSIS |
Produkt ist nicht verfügbar |
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JANSR2N2920U/TR | Microchip Technology | Description: TRANSISTOR RH DUAL - SMALL-SIGNA |
Produkt ist nicht verfügbar |
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JANKCA2N2920 | Microchip Technology | Description: TRANSISTOR DUAL SMALL-SIGNAL BJT |
Produkt ist nicht verfügbar |
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JANS2N2920U/TR | Microchip Technology | Description: TRANSISTOR DUAL SMALL-SIGNAL BJT |
Produkt ist nicht verfügbar |
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JANS2N2920L | Microchip Technology | Description: PNP SMALL SIGNAL SILICON TRANSIS |
Produkt ist nicht verfügbar |
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JAN2N2920 | Microchip Technology | Description: NPN TRANSISTOR |
Produkt ist nicht verfügbar |
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JAN2N2920U/TR | Microchip Technology | Description: TRANSISTOR DUAL SMALL-SIGNAL BJT |
Produkt ist nicht verfügbar |
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JANTXV2N2920U/TR | Microchip Technology | Description: TRANSISTOR DUAL SMALL-SIGNAL BJT |
Produkt ist nicht verfügbar |
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JANSF2N2920 | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
Produkt ist nicht verfügbar |
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JANSR2N2920 | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
Produkt ist nicht verfügbar |
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JANTX2N2920A | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
Produkt ist nicht verfügbar |
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R2N2920A | Microchip Technology | Description: RH DUAL - SMALL-SIGNAL BJT |
Produkt ist nicht verfügbar |
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JANSR2N2920L | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
Produkt ist nicht verfügbar |
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JANTXV2N2920A | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
Produkt ist nicht verfügbar |
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2N2920U/TR | Microchip Technology | Description: TRANSISTOR DUAL SMALL-SIGNAL BJT |
Produkt ist nicht verfügbar |
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JANTX2N2920U/TR | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
Produkt ist nicht verfügbar |
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JANSF2N2920L | Microchip Technology | Description: RH SMALL-SIGNAL BJT |
Produkt ist nicht verfügbar |
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JAN2N2920A | Microchip Technology | Description: DUAL SMALL-SIGNAL BJT |
Produkt ist nicht verfügbar |
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2N5794 | Microchip Technology | Description: NPN TRANSISTOR |
Produkt ist nicht verfügbar |
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JAN2N5794 | Microchip Technology | Description: NPN TRANSISTOR |
Produkt ist nicht verfügbar |
MART100KP250A |
Hersteller: Microchip Technology
Description: TVS DIODE 250VWM 493VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 278V
Voltage - Clamping (Max) @ Ipp: 493V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 250VWM 493VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 278V
Voltage - Clamping (Max) @ Ipp: 493V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
MART100KP250Ae3 |
Hersteller: Microchip Technology
Description: TVS DIODE 250VWM 493VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 278V
Voltage - Clamping (Max) @ Ipp: 493V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 250VWM 493VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 278V
Voltage - Clamping (Max) @ Ipp: 493V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
MART100KP220CA |
Hersteller: Microchip Technology
Description: TVS DIODE 220VWM 434VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 434V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 220VWM 434VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 434V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
MART100KP220CAe3 |
Hersteller: Microchip Technology
Description: TVS DIODE 220VWM 434VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 434V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 220VWM 434VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 434V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
MART100KP220Ae3 |
Hersteller: Microchip Technology
Description: TVS DIODE 220VWM 434VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 434V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 220VWM 434VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 434V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
MART100KP250CAe3 |
Hersteller: Microchip Technology
Description: TVS DIODE 250VWM 493VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 278V
Voltage - Clamping (Max) @ Ipp: 493V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 250VWM 493VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 250V
Supplier Device Package: Case 5A (DO-204AR)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 278V
Voltage - Clamping (Max) @ Ipp: 493V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
MART100KP220A |
Hersteller: Microchip Technology
Description: TVS DIODE 220VWM 434VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 434V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 220VWM 434VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 434V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
1N914-1 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Description: DIODE GEN PURP 75V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Produkt ist nicht verfügbar
PIC18LF25K40-E/ML |
Hersteller: Microchip Technology
Description: IC MCU 8BIT 32KB FLASH 28QFN
Description: IC MCU 8BIT 32KB FLASH 28QFN
Produkt ist nicht verfügbar
MASMBJ20CA |
Hersteller: Microchip Technology
Description: TVS DIODE 20VWM 32.4VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 20VWM 32.4VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
MXSMBJ20CA |
Hersteller: Microchip Technology
Description: TVS DIODE 20VWM 32.4VC SMBJ
Description: TVS DIODE 20VWM 32.4VC SMBJ
Produkt ist nicht verfügbar
MASMBJ20CAe3 |
Hersteller: Microchip Technology
Description: TVS DIODE 20VWM 32.4VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 20VWM 32.4VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.5A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
MXSMBJ20CAe3 |
Hersteller: Microchip Technology
Description: TVS DIODE 20VWM 32.4VC SMBJ
Description: TVS DIODE 20VWM 32.4VC SMBJ
Produkt ist nicht verfügbar
DSC1121CI2-045.1580 |
Hersteller: Microchip Technology
Description: MEMS OSC 45.158MHZ LVCMOS 25PPM
Description: MEMS OSC 45.158MHZ LVCMOS 25PPM
Produkt ist nicht verfügbar
DSC1121CI2-045.1580T |
Hersteller: Microchip Technology
Description: MEMS OSC 45.158MHZ LVCMOS 25PPM
Description: MEMS OSC 45.158MHZ LVCMOS 25PPM
Produkt ist nicht verfügbar
JANS1N5418US |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/411
Description: DIODE GEN PURP 400V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/411
Produkt ist nicht verfügbar
JANTX1N5418US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/411
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/411
Produkt ist nicht verfügbar
JANTX1N5417US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANTX1N5419US |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 500V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Qualification: MIL-PRF-19500/411
Description: DIODE GEN PURP 500V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Qualification: MIL-PRF-19500/411
Produkt ist nicht verfügbar
JANS1N5418US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/411
Description: DIODE GEN PURP 400V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/411
Produkt ist nicht verfügbar
JANS1N5415/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANTXV1N5418US |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/411
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/411
Produkt ist nicht verfügbar
JANS1N5418/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 165pF @ 4V
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/411
Description: DIODE GEN PURP 400V 3A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 165pF @ 4V
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/411
Produkt ist nicht verfügbar
JAN1N5417US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANS1N5417US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANTXV1N5417US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANS1N5417US |
Hersteller: Microchip Technology
Description: RECTIFIER DIODE
Description: RECTIFIER DIODE
Produkt ist nicht verfügbar
JANTXV1N5415US/TR |
Hersteller: Microchip Technology
Description: RECTIFIER UFR,FRR
Description: RECTIFIER UFR,FRR
Produkt ist nicht verfügbar
JANTXV1N5417US |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 3A D5B
Description: DIODE GEN PURP 200V 3A D5B
Produkt ist nicht verfügbar
JANTXV1N5418US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/411
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/411
Produkt ist nicht verfügbar
1N4454UR |
Hersteller: Microchip Technology
Description: DIODE GP 75V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Description: DIODE GP 75V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
UM7302B |
Hersteller: Microchip Technology
Description: SI PPIN HERMETIC GLASS AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Diode Type: PIN - Single
Capacitance @ Vr, F: 0.7pF @ 100V, 1MHz
Resistance @ If, F: 3Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 200V
Supplier Device Package: Axial
Power Dissipation (Max): 4 W
Description: SI PPIN HERMETIC GLASS AXIAL
Packaging: Tape & Reel (TR)
Package / Case: Axial
Diode Type: PIN - Single
Capacitance @ Vr, F: 0.7pF @ 100V, 1MHz
Resistance @ If, F: 3Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 200V
Supplier Device Package: Axial
Power Dissipation (Max): 4 W
Produkt ist nicht verfügbar
VCC1-B3D-3M68640000 |
Hersteller: Microchip Technology
Description: CMOS XO +3.3 VDC 15PF -40C TO +8
Description: CMOS XO +3.3 VDC 15PF -40C TO +8
Produkt ist nicht verfügbar
VCC1-A3D-3M68400000 |
Hersteller: Microchip Technology
Description: CMOS XO +5.0 VDC 15PF -40C TO +8
Description: CMOS XO +5.0 VDC 15PF -40C TO +8
Produkt ist nicht verfügbar
VCC1-B3D-3M68600000 |
Hersteller: Microchip Technology
Description: CMOS XO +3.3 VDC 15PF -40C TO +8
Description: CMOS XO +3.3 VDC 15PF -40C TO +8
Produkt ist nicht verfügbar
MASMBJ120CAe3 |
Hersteller: Microchip Technology
Description: TVS DIODE 120VWM 193VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 120VWM 193VC SMBJ
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.1A
Voltage - Reverse Standoff (Typ): 120V
Supplier Device Package: SMBJ (DO-214AA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 133V
Voltage - Clamping (Max) @ Ipp: 193V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
MSMCJLCE43A |
Hersteller: Microchip Technology
Description: TVS DIODE 43VWM 69.4VC DO214AB
Description: TVS DIODE 43VWM 69.4VC DO214AB
Produkt ist nicht verfügbar
MSMCJLCE90Ae3 |
Hersteller: Microchip Technology
Description: TVS DIODE 90VWM 146VC DO214AB
Description: TVS DIODE 90VWM 146VC DO214AB
Produkt ist nicht verfügbar
MSMCJLCE24A |
Hersteller: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC DO214AB
Description: TVS DIODE 24VWM 38.9VC DO214AB
Produkt ist nicht verfügbar
JANS2N2920U |
Hersteller: Microchip Technology
Description: PNP SMALL SIGNAL SILICON TRANSIS
Description: PNP SMALL SIGNAL SILICON TRANSIS
Produkt ist nicht verfügbar
JANSR2N2920U/TR |
Hersteller: Microchip Technology
Description: TRANSISTOR RH DUAL - SMALL-SIGNA
Description: TRANSISTOR RH DUAL - SMALL-SIGNA
Produkt ist nicht verfügbar
JANKCA2N2920 |
Hersteller: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
JANS2N2920U/TR |
Hersteller: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
JANS2N2920L |
Hersteller: Microchip Technology
Description: PNP SMALL SIGNAL SILICON TRANSIS
Description: PNP SMALL SIGNAL SILICON TRANSIS
Produkt ist nicht verfügbar
JAN2N2920U/TR |
Hersteller: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
JANTXV2N2920U/TR |
Hersteller: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
JANSF2N2920 |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
JANSR2N2920 |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
JANTX2N2920A |
Hersteller: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
R2N2920A |
Hersteller: Microchip Technology
Description: RH DUAL - SMALL-SIGNAL BJT
Description: RH DUAL - SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
JANSR2N2920L |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
JANTXV2N2920A |
Hersteller: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
2N2920U/TR |
Hersteller: Microchip Technology
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Description: TRANSISTOR DUAL SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
JANTX2N2920U/TR |
Hersteller: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
JANSF2N2920L |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Description: RH SMALL-SIGNAL BJT
Produkt ist nicht verfügbar
JAN2N2920A |
Hersteller: Microchip Technology
Description: DUAL SMALL-SIGNAL BJT
Description: DUAL SMALL-SIGNAL BJT
Produkt ist nicht verfügbar