Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (360131) > Seite 3402 nach 6003
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| APT84M50L | MICROCHIP TECHNOLOGY |
 APT84M50L THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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APT85GR120B2 | MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 85A Pulsed collector current: 340A Turn-on time: 113ns Turn-off time: 445ns Type of transistor: IGBT Power dissipation: 962W Kind of package: tube Gate charge: 0.49µC Technology: NPT Ultra Fast IGBT Mounting: THT Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT85GR120J | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 85A Pulsed collector current: 340A Application: for UPS; Inverter; motors Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Type of semiconductor module: IGBT Case: SOT227B Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APT85GR120JD60 | MICROCHIP TECHNOLOGY |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B Max. off-state voltage: 1.2kV Semiconductor structure: single transistor Gate-emitter voltage: ±30V Collector current: 85A Pulsed collector current: 340A Application: for UPS; Inverter; motors Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Type of semiconductor module: IGBT Case: SOT227B Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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APT85GR120L | MICROCHIP TECHNOLOGY |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 85A Pulsed collector current: 340A Turn-on time: 113ns Turn-off time: 445ns Type of transistor: IGBT Power dissipation: 962W Kind of package: tube Gate charge: 0.49µC Technology: NPT; POWER MOS 8® Mounting: THT Case: TO264 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| APT8DQ60KG | MICROCHIP TECHNOLOGY |
APT8DQ60KG THT universal diodes |
Produkt ist nicht verfügbar |
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| APT8M100B | MICROCHIP TECHNOLOGY |
APT8M100B THT N channel transistors |
Produkt ist nicht verfügbar |
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APT90DR160HJ | MICROCHIP TECHNOLOGY |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 90A; Ifsm: 850A Case: SOT227B Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: single-phase Leads: M4 screws Max. off-state voltage: 1.6kV Max. forward voltage: 1.3V Load current: 90A Max. forward impulse current: 850A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT94N65B2C6 | MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 61A Pulsed drain current: 282A Power dissipation: 833W Case: TO247MAX Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: THT Gate charge: 0.32µC Kind of channel: enhancement Technology: CoolMOS™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT95GR65B2 | MICROCHIP TECHNOLOGY |
APT95GR65B2 THT IGBT transistors |
Produkt ist nicht verfügbar |
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| APT9F100B | MICROCHIP TECHNOLOGY |
APT9F100B THT N channel transistors |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APT9M100B | MICROCHIP TECHNOLOGY |
APT9M100B THT N channel transistors |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT9M100S | MICROCHIP TECHNOLOGY |
APT9M100S SMD N channel transistors |
Produkt ist nicht verfügbar |
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| APTC60AM24SCTG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 70A; SP4; Idm: 260A; 462W; screw Case: SP4 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: CoolMOS™; SiC Gate-source voltage: ±20V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 260A Type of semiconductor module: MOSFET transistor Drain-source voltage: 600V Drain current: 70A On-state resistance: 24mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 462W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60AM24T1G | MICROCHIP TECHNOLOGY |
APTC60AM24T1G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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APTC60AM35SCTG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 72A; SP4; FASTON connectors; 416W Electrical mounting: FASTON connectors Mechanical mounting: screw Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 72A On-state resistance: 35mΩ Power dissipation: 416W Case: SP4 Technology: CoolMOS™ Gate-source voltage: ±30V Pulsed drain current: 288A Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| APTC60AM35T1G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP1; Press-in PCB; 416W Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A On-state resistance: 35mΩ Power dissipation: 416W Case: SP1 Technology: CoolMOS™ Gate-source voltage: ±20V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 200A Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60AM45B1G | MICROCHIP TECHNOLOGY |
APTC60AM45B1G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60AM45BC1G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP1; Press-in PCB; 250W Case: SP1 Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; SiC Gate-source voltage: ±20V Topology: boost chopper; MOSFET half-bridge Pulsed drain current: 130A Type of semiconductor module: MOSFET transistor Drain-source voltage: 600V Drain current: 38A On-state resistance: 45mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 250W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60AM45T1G | MICROCHIP TECHNOLOGY |
APTC60AM45T1G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60BBM24T3G | MICROCHIP TECHNOLOGY |
APTC60BBM24T3G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60DAM18CTG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 107A; SP4; Idm: 572A; 833W Case: SP4 On-state resistance: 18mΩ Semiconductor structure: SiC diode/transistor Drain-source voltage: 600V Drain current: 107A Power dissipation: 833W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: CoolMOS™; SiC Gate-source voltage: ±30V Topology: boost chopper; NTC thermistor Pulsed drain current: 572A Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60DDAM24T3G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 70A; SP3; Press-in PCB; Idm: 260A Case: SP3 Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 70A On-state resistance: 24mΩ Power dissipation: 462W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SJ-MOSFET Gate-source voltage: ±20V Topology: boost chopper x2; NTC thermistor Pulsed drain current: 260A Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60DDAM35T3G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 54A; SP3; Press-in PCB; Idm: 288A Case: SP3 Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 54A On-state resistance: 35mΩ Power dissipation: 416W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SJ-MOSFET Gate-source voltage: ±20V Topology: boost chopper x2; NTC thermistor Pulsed drain current: 288A Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60DDAM45T1G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A Case: SP1 Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 38A On-state resistance: 45mΩ Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Topology: boost chopper x2; NTC thermistor Pulsed drain current: 130A Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60DDAM70T1G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP1; Press-in PCB; Idm: 160A Case: SP1 Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 29A On-state resistance: 70mΩ Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Topology: boost chopper x2; NTC thermistor Pulsed drain current: 160A Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60DHM24T3G | MICROCHIP TECHNOLOGY |
APTC60DHM24T3G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60DSKM24T3G | MICROCHIP TECHNOLOGY |
APTC60DSKM24T3G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60HM24T3G | MICROCHIP TECHNOLOGY |
APTC60HM24T3G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60HM45SCTG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP4; Idm: 130A; 250W; screw Case: SP4 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±20V Topology: H-bridge; NTC thermistor Pulsed drain current: 130A Type of semiconductor module: MOSFET transistor Drain-source voltage: 600V Drain current: 38A On-state resistance: 45mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 250W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60HM45T1G | MICROCHIP TECHNOLOGY |
APTC60HM45T1G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60HM70BT3G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 29A Case: SP3F Topology: boost chopper; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 70mΩ Pulsed drain current: 160A Power dissipation: 250W Technology: CoolMOS™ Gate-source voltage: ±20V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60HM70RT3G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A Type of semiconductor module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 29A Case: SP3F Topology: H-bridge; NTC thermistor; single-phase diode bridge Electrical mounting: Press-in PCB On-state resistance: 70mΩ Pulsed drain current: 160A Power dissipation: 250W Technology: CoolMOS™ Gate-source voltage: ±20V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60HM70T3G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 29A; SP3; Press-in PCB; 250W Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 29A Case: SP3 Topology: H-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 70mΩ Pulsed drain current: 160A Power dissipation: 250W Technology: SJ-MOSFET Gate-source voltage: ±20V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60SKM24CT1G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 70A; SP1; Press-in PCB; 462W Case: SP1 Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC; SJ-MOSFET Gate-source voltage: ±20V Topology: buck chopper; NTC thermistor Pulsed drain current: 260A Type of semiconductor module: MOSFET transistor Drain-source voltage: 600V Drain current: 70A On-state resistance: 24mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 462W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60SKM24T1G | MICROCHIP TECHNOLOGY |
APTC60SKM24T1G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60TAM21SCTPAG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 87A; SP6P; Press-in PCB; 625W Case: SP6P Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; SiC Gate-source voltage: ±20V Topology: MOSFET x3 half-bridge; NTC thermistor Pulsed drain current: 400A Type of semiconductor module: MOSFET transistor Drain-source voltage: 600V Drain current: 87A On-state resistance: 21mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 625W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60TAM24TPG | MICROCHIP TECHNOLOGY |
APTC60TAM24TPG Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60TAM35PG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A On-state resistance: 35mΩ Power dissipation: 416W Case: SP6P Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Topology: MOSFET x3 half-bridge Pulsed drain current: 200A Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60TDUM35PG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Drain-source voltage: 600V Drain current: 54A On-state resistance: 35mΩ Power dissipation: 416W Case: SP6P Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±20V Topology: MOSFET x3 half-bridge Pulsed drain current: 200A Type of semiconductor module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60VDAM24T3G | MICROCHIP TECHNOLOGY |
APTC60VDAM24T3G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC60VDAM45T1G | MICROCHIP TECHNOLOGY |
APTC60VDAM45T1G Transistor modules MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC80A10SCTG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 32A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP4 Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 168A On-state resistance: 0.1Ω Type of semiconductor module: MOSFET transistor Power dissipation: 416W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC80A15SCTG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP4 Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge; NTC thermistor Pulsed drain current: 112A On-state resistance: 0.15Ω Type of semiconductor module: MOSFET transistor Power dissipation: 277W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC80AM75SCG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 43A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP6C Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET half-bridge Pulsed drain current: 232A On-state resistance: 75mΩ Type of semiconductor module: MOSFET transistor Power dissipation: 568W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC80DDA15T3G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: diode/transistor Case: SP3 Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: boost chopper x2; NTC thermistor Pulsed drain current: 110A On-state resistance: 0.15Ω Type of semiconductor module: MOSFET transistor Power dissipation: 277W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC80H15T1G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP1 Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 110A On-state resistance: 0.15Ω Type of semiconductor module: MOSFET transistor Power dissipation: 277W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC80H15T3G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP3 Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 110A On-state resistance: 0.15Ω Type of semiconductor module: MOSFET transistor Power dissipation: 277W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC80H29SCTG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Drain current: 11A Drain-source voltage: 800V Semiconductor structure: SiC diode/transistor Case: SP4 Technology: CoolMOS™; SiC; SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 60A On-state resistance: 0.29Ω Type of semiconductor module: MOSFET transistor Power dissipation: 156W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC80H29T3G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 11A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP3 Technology: SJ-MOSFET Gate-source voltage: ±30V Topology: H-bridge; NTC thermistor Pulsed drain current: 60A On-state resistance: 0.29Ω Type of semiconductor module: MOSFET transistor Power dissipation: 156W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC80TA15PG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP6P Technology: CoolMOS™ Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 110A On-state resistance: 0.15Ω Type of semiconductor module: MOSFET transistor Power dissipation: 277W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTC80TDU15PG | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W Electrical mounting: Press-in PCB Mechanical mounting: screw Drain current: 21A Drain-source voltage: 800V Semiconductor structure: transistor/transistor Case: SP6P Technology: CoolMOS™; SJ-MOSFET Gate-source voltage: ±30V Topology: MOSFET x3 half-bridge Pulsed drain current: 110A On-state resistance: 0.15Ω Type of semiconductor module: MOSFET transistor Power dissipation: 277W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTCV40H60CT1G | MICROCHIP TECHNOLOGY |
APTCV40H60CT1G Transistor modules MOSFET |
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Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTCV50H60T3G | MICROCHIP TECHNOLOGY |
APTCV50H60T3G Transistor modules MOSFET |
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| APTCV60HM45BC20T3G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W Case: SP3F Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: CoolMOS™; Field Stop; SiC; Trench Gate-source voltage: ±20V Topology: boost chopper; H-bridge; NTC thermistor Pulsed drain current: 130A Type of semiconductor module: MOSFET transistor Drain-source voltage: 600V Drain current: 38A On-state resistance: 45mΩ Semiconductor structure: SiC diode/transistor Power dissipation: 250W Anzahl je Verpackung: 1 Stücke |
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| APTCV60HM45BT3G | MICROCHIP TECHNOLOGY |
APTCV60HM45BT3G Transistor modules MOSFET |
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| APTCV60HM45RCT3G | MICROCHIP TECHNOLOGY |
APTCV60HM45RCT3G Transistor modules MOSFET |
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| APTCV60HM45RT3G | MICROCHIP TECHNOLOGY |
APTCV60HM45RT3G Transistor modules MOSFET |
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| APTCV60TLM24T3G | MICROCHIP TECHNOLOGY |
APTCV60TLM24T3G Transistor modules MOSFET |
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Im Einkaufswagen Stück im Wert von UAH | |||||||
| APTCV60TLM45T3G | MICROCHIP TECHNOLOGY |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 38A Collector current: 75A On-state resistance: 45mΩ Power dissipation: 250W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: Field Stop; SJ-MOSFET; Trench Gate-source voltage: ±20V Topology: NTC thermistor; three-level inverter; single-phase Pulsed drain current: 130A Type of semiconductor module: MOSFET/IGBT transistor Case: SP3F Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| APT84M50L |
|
Hersteller: MICROCHIP TECHNOLOGY
APT84M50L THT N channel transistors
APT84M50L THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT85GR120B2 |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 85A
Pulsed collector current: 340A
Turn-on time: 113ns
Turn-off time: 445ns
Type of transistor: IGBT
Power dissipation: 962W
Kind of package: tube
Gate charge: 0.49µC
Technology: NPT Ultra Fast IGBT
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1200V; 85A; 962W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 85A
Pulsed collector current: 340A
Turn-on time: 113ns
Turn-off time: 445ns
Type of transistor: IGBT
Power dissipation: 962W
Kind of package: tube
Gate charge: 0.49µC
Technology: NPT Ultra Fast IGBT
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APT85GR120J |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 85A
Pulsed collector current: 340A
Application: for UPS; Inverter; motors
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Type of semiconductor module: IGBT
Case: SOT227B
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 85A
Pulsed collector current: 340A
Application: for UPS; Inverter; motors
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Type of semiconductor module: IGBT
Case: SOT227B
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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| APT85GR120JD60 |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 85A
Pulsed collector current: 340A
Application: for UPS; Inverter; motors
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Type of semiconductor module: IGBT
Case: SOT227B
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B
Max. off-state voltage: 1.2kV
Semiconductor structure: single transistor
Gate-emitter voltage: ±30V
Collector current: 85A
Pulsed collector current: 340A
Application: for UPS; Inverter; motors
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Type of semiconductor module: IGBT
Case: SOT227B
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APT85GR120L |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 85A
Pulsed collector current: 340A
Turn-on time: 113ns
Turn-off time: 445ns
Type of transistor: IGBT
Power dissipation: 962W
Kind of package: tube
Gate charge: 0.49µC
Technology: NPT; POWER MOS 8®
Mounting: THT
Case: TO264
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 85A; 962W; TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 85A
Pulsed collector current: 340A
Turn-on time: 113ns
Turn-off time: 445ns
Type of transistor: IGBT
Power dissipation: 962W
Kind of package: tube
Gate charge: 0.49µC
Technology: NPT; POWER MOS 8®
Mounting: THT
Case: TO264
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APT8DQ60KG |
|
Hersteller: MICROCHIP TECHNOLOGY
APT8DQ60KG THT universal diodes
APT8DQ60KG THT universal diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT8M100B |
|
Hersteller: MICROCHIP TECHNOLOGY
APT8M100B THT N channel transistors
APT8M100B THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT90DR160HJ |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 90A; Ifsm: 850A
Case: SOT227B
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Leads: M4 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 90A
Max. forward impulse current: 850A
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 90A; Ifsm: 850A
Case: SOT227B
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Leads: M4 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 90A
Max. forward impulse current: 850A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 41.81 EUR |
| 3+ | 40.21 EUR |
| 10+ | 40.2 EUR |
| APT94N65B2C6 |
Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 61A
Pulsed drain current: 282A
Power dissipation: 833W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 0.32µC
Kind of channel: enhancement
Technology: CoolMOS™
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 61A; Idm: 282A; 833W; TO247MAX
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 61A
Pulsed drain current: 282A
Power dissipation: 833W
Case: TO247MAX
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: THT
Gate charge: 0.32µC
Kind of channel: enhancement
Technology: CoolMOS™
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APT95GR65B2 |
|
Hersteller: MICROCHIP TECHNOLOGY
APT95GR65B2 THT IGBT transistors
APT95GR65B2 THT IGBT transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT9F100B |
|
Hersteller: MICROCHIP TECHNOLOGY
APT9F100B THT N channel transistors
APT9F100B THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APT9M100B |
|
Hersteller: MICROCHIP TECHNOLOGY
APT9M100B THT N channel transistors
APT9M100B THT N channel transistors
auf Bestellung 3 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 23.84 EUR |
| 7+ | 10.21 EUR |
| 10+ | 7.68 EUR |
| APT9M100S |
|
Hersteller: MICROCHIP TECHNOLOGY
APT9M100S SMD N channel transistors
APT9M100S SMD N channel transistors
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTC60AM24SCTG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 70A; SP4; Idm: 260A; 462W; screw
Case: SP4
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 260A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Semiconductor structure: SiC diode/transistor
Power dissipation: 462W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 70A; SP4; Idm: 260A; 462W; screw
Case: SP4
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 260A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Semiconductor structure: SiC diode/transistor
Power dissipation: 462W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTC60AM24T1G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTC60AM24T1G Transistor modules MOSFET
APTC60AM24T1G Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTC60AM35SCTG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 72A; SP4; FASTON connectors; 416W
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 72A
On-state resistance: 35mΩ
Power dissipation: 416W
Case: SP4
Technology: CoolMOS™
Gate-source voltage: ±30V
Pulsed drain current: 288A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 72A; SP4; FASTON connectors; 416W
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 72A
On-state resistance: 35mΩ
Power dissipation: 416W
Case: SP4
Technology: CoolMOS™
Gate-source voltage: ±30V
Pulsed drain current: 288A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTC60AM35T1G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP1; Press-in PCB; 416W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
On-state resistance: 35mΩ
Power dissipation: 416W
Case: SP1
Technology: CoolMOS™
Gate-source voltage: ±20V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 200A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP1; Press-in PCB; 416W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
On-state resistance: 35mΩ
Power dissipation: 416W
Case: SP1
Technology: CoolMOS™
Gate-source voltage: ±20V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 200A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTC60AM45B1G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTC60AM45B1G Transistor modules MOSFET
APTC60AM45B1G Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTC60AM45BC1G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP1; Press-in PCB; 250W
Case: SP1
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SiC
Gate-source voltage: ±20V
Topology: boost chopper; MOSFET half-bridge
Pulsed drain current: 130A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 45mΩ
Semiconductor structure: SiC diode/transistor
Power dissipation: 250W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP1; Press-in PCB; 250W
Case: SP1
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SiC
Gate-source voltage: ±20V
Topology: boost chopper; MOSFET half-bridge
Pulsed drain current: 130A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 45mΩ
Semiconductor structure: SiC diode/transistor
Power dissipation: 250W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTC60AM45T1G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTC60AM45T1G Transistor modules MOSFET
APTC60AM45T1G Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTC60BBM24T3G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTC60BBM24T3G Transistor modules MOSFET
APTC60BBM24T3G Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTC60DAM18CTG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 107A; SP4; Idm: 572A; 833W
Case: SP4
On-state resistance: 18mΩ
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 107A
Power dissipation: 833W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC
Gate-source voltage: ±30V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 572A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 107A; SP4; Idm: 572A; 833W
Case: SP4
On-state resistance: 18mΩ
Semiconductor structure: SiC diode/transistor
Drain-source voltage: 600V
Drain current: 107A
Power dissipation: 833W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC
Gate-source voltage: ±30V
Topology: boost chopper; NTC thermistor
Pulsed drain current: 572A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTC60DDAM24T3G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3; Press-in PCB; Idm: 260A
Case: SP3
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Power dissipation: 462W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 260A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 70A; SP3; Press-in PCB; Idm: 260A
Case: SP3
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Power dissipation: 462W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 260A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTC60DDAM35T3G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 54A; SP3; Press-in PCB; Idm: 288A
Case: SP3
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 54A
On-state resistance: 35mΩ
Power dissipation: 416W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 288A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 54A; SP3; Press-in PCB; Idm: 288A
Case: SP3
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 54A
On-state resistance: 35mΩ
Power dissipation: 416W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 288A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTC60DDAM45T1G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Case: SP1
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 130A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP1; Press-in PCB; Idm: 130A
Case: SP1
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 130A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTC60DDAM70T1G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP1; Press-in PCB; Idm: 160A
Case: SP1
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 29A
On-state resistance: 70mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 160A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP1; Press-in PCB; Idm: 160A
Case: SP1
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 29A
On-state resistance: 70mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 160A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTC60DHM24T3G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTC60DHM24T3G Transistor modules MOSFET
APTC60DHM24T3G Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTC60DSKM24T3G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTC60DSKM24T3G Transistor modules MOSFET
APTC60DSKM24T3G Transistor modules MOSFET
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTC60HM24T3G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTC60HM24T3G Transistor modules MOSFET
APTC60HM24T3G Transistor modules MOSFET
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| APTC60HM45SCTG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP4; Idm: 130A; 250W; screw
Case: SP4
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±20V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 130A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 45mΩ
Semiconductor structure: SiC diode/transistor
Power dissipation: 250W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP4; Idm: 130A; 250W; screw
Case: SP4
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±20V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 130A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 45mΩ
Semiconductor structure: SiC diode/transistor
Power dissipation: 250W
Anzahl je Verpackung: 1 Stücke
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| APTC60HM45T1G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTC60HM45T1G Transistor modules MOSFET
APTC60HM45T1G Transistor modules MOSFET
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| APTC60HM70BT3G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 29A
Case: SP3F
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 70mΩ
Pulsed drain current: 160A
Power dissipation: 250W
Technology: CoolMOS™
Gate-source voltage: ±20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 29A
Case: SP3F
Topology: boost chopper; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 70mΩ
Pulsed drain current: 160A
Power dissipation: 250W
Technology: CoolMOS™
Gate-source voltage: ±20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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| APTC60HM70RT3G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 29A
Case: SP3F
Topology: H-bridge; NTC thermistor; single-phase diode bridge
Electrical mounting: Press-in PCB
On-state resistance: 70mΩ
Pulsed drain current: 160A
Power dissipation: 250W
Technology: CoolMOS™
Gate-source voltage: ±20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 29A; SP3F; Press-in PCB; Idm: 160A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 29A
Case: SP3F
Topology: H-bridge; NTC thermistor; single-phase diode bridge
Electrical mounting: Press-in PCB
On-state resistance: 70mΩ
Pulsed drain current: 160A
Power dissipation: 250W
Technology: CoolMOS™
Gate-source voltage: ±20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTC60HM70T3G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 29A; SP3; Press-in PCB; 250W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 29A
Case: SP3
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 70mΩ
Pulsed drain current: 160A
Power dissipation: 250W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 29A; SP3; Press-in PCB; 250W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 29A
Case: SP3
Topology: H-bridge; NTC thermistor
Electrical mounting: Press-in PCB
On-state resistance: 70mΩ
Pulsed drain current: 160A
Power dissipation: 250W
Technology: SJ-MOSFET
Gate-source voltage: ±20V
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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| APTC60SKM24CT1G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 70A; SP1; Press-in PCB; 462W
Case: SP1
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC; SJ-MOSFET
Gate-source voltage: ±20V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 260A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Semiconductor structure: SiC diode/transistor
Power dissipation: 462W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 70A; SP1; Press-in PCB; 462W
Case: SP1
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC; SJ-MOSFET
Gate-source voltage: ±20V
Topology: buck chopper; NTC thermistor
Pulsed drain current: 260A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 70A
On-state resistance: 24mΩ
Semiconductor structure: SiC diode/transistor
Power dissipation: 462W
Anzahl je Verpackung: 1 Stücke
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| APTC60SKM24T1G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTC60SKM24T1G Transistor modules MOSFET
APTC60SKM24T1G Transistor modules MOSFET
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| APTC60TAM21SCTPAG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 87A; SP6P; Press-in PCB; 625W
Case: SP6P
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SiC
Gate-source voltage: ±20V
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 400A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 87A
On-state resistance: 21mΩ
Semiconductor structure: SiC diode/transistor
Power dissipation: 625W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 87A; SP6P; Press-in PCB; 625W
Case: SP6P
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; SiC
Gate-source voltage: ±20V
Topology: MOSFET x3 half-bridge; NTC thermistor
Pulsed drain current: 400A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 87A
On-state resistance: 21mΩ
Semiconductor structure: SiC diode/transistor
Power dissipation: 625W
Anzahl je Verpackung: 1 Stücke
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| APTC60TAM24TPG |
|
Hersteller: MICROCHIP TECHNOLOGY
APTC60TAM24TPG Transistor modules MOSFET
APTC60TAM24TPG Transistor modules MOSFET
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| APTC60TAM35PG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
On-state resistance: 35mΩ
Power dissipation: 416W
Case: SP6P
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 200A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
On-state resistance: 35mΩ
Power dissipation: 416W
Case: SP6P
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 200A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
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| APTC60TDUM35PG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
On-state resistance: 35mΩ
Power dissipation: 416W
Case: SP6P
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 200A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 600V; 54A; SP6P; Press-in PCB; 416W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Drain-source voltage: 600V
Drain current: 54A
On-state resistance: 35mΩ
Power dissipation: 416W
Case: SP6P
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±20V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 200A
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
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Stück im Wert von UAH
| APTC60VDAM24T3G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTC60VDAM24T3G Transistor modules MOSFET
APTC60VDAM24T3G Transistor modules MOSFET
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| APTC60VDAM45T1G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTC60VDAM45T1G Transistor modules MOSFET
APTC60VDAM45T1G Transistor modules MOSFET
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| APTC80A10SCTG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 32A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 168A
On-state resistance: 0.1Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 416W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 32A; SP4; Idm: 168A; 416W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 32A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 168A
On-state resistance: 0.1Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 416W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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| APTC80A15SCTG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 112A
On-state resistance: 0.15Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 21A; SP4; Idm: 112A; 277W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge; NTC thermistor
Pulsed drain current: 112A
On-state resistance: 0.15Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
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| APTC80AM75SCG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 43A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP6C
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 232A
On-state resistance: 75mΩ
Type of semiconductor module: MOSFET transistor
Power dissipation: 568W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 43A; SP6C; Idm: 232A; 568W
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 43A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP6C
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET half-bridge
Pulsed drain current: 232A
On-state resistance: 75mΩ
Type of semiconductor module: MOSFET transistor
Power dissipation: 568W
Anzahl je Verpackung: 1 Stücke
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| APTC80DDA15T3G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: diode/transistor
Case: SP3
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 110A
On-state resistance: 0.15Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 800V; 21A; SP3; Press-in PCB; Idm: 110A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: diode/transistor
Case: SP3
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: boost chopper x2; NTC thermistor
Pulsed drain current: 110A
On-state resistance: 0.15Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTC80H15T1G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP1
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 110A
On-state resistance: 0.15Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP1; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP1
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 110A
On-state resistance: 0.15Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTC80H15T3G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP3
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 110A
On-state resistance: 0.15Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP3; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP3
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 110A
On-state resistance: 0.15Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTC80H29SCTG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 11A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 60A
On-state resistance: 0.29Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 156W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 800V; 11A; SP4; Idm: 60A; 156W; screw
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Drain current: 11A
Drain-source voltage: 800V
Semiconductor structure: SiC diode/transistor
Case: SP4
Technology: CoolMOS™; SiC; SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 60A
On-state resistance: 0.29Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 156W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTC80H29T3G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 11A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP3
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 60A
On-state resistance: 0.29Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 156W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 11A; SP3; Press-in PCB; 156W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 11A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP3
Technology: SJ-MOSFET
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 60A
On-state resistance: 0.29Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 156W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTC80TA15PG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP6P
Technology: CoolMOS™
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 110A
On-state resistance: 0.15Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP6P
Technology: CoolMOS™
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 110A
On-state resistance: 0.15Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTC80TDU15PG |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP6P
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 110A
On-state resistance: 0.15Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 800V; 21A; SP6P; Press-in PCB; 277W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Drain current: 21A
Drain-source voltage: 800V
Semiconductor structure: transistor/transistor
Case: SP6P
Technology: CoolMOS™; SJ-MOSFET
Gate-source voltage: ±30V
Topology: MOSFET x3 half-bridge
Pulsed drain current: 110A
On-state resistance: 0.15Ω
Type of semiconductor module: MOSFET transistor
Power dissipation: 277W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTCV40H60CT1G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTCV40H60CT1G Transistor modules MOSFET
APTCV40H60CT1G Transistor modules MOSFET
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTCV50H60T3G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTCV50H60T3G Transistor modules MOSFET
APTCV50H60T3G Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTCV60HM45BC20T3G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Case: SP3F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; Field Stop; SiC; Trench
Gate-source voltage: ±20V
Topology: boost chopper; H-bridge; NTC thermistor
Pulsed drain current: 130A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 45mΩ
Semiconductor structure: SiC diode/transistor
Power dissipation: 250W
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; SiC diode/transistor; 600V; 38A; SP3F; Press-in PCB; 250W
Case: SP3F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: CoolMOS™; Field Stop; SiC; Trench
Gate-source voltage: ±20V
Topology: boost chopper; H-bridge; NTC thermistor
Pulsed drain current: 130A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 600V
Drain current: 38A
On-state resistance: 45mΩ
Semiconductor structure: SiC diode/transistor
Power dissipation: 250W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTCV60HM45BT3G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTCV60HM45BT3G Transistor modules MOSFET
APTCV60HM45BT3G Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTCV60HM45RCT3G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTCV60HM45RCT3G Transistor modules MOSFET
APTCV60HM45RCT3G Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTCV60HM45RT3G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTCV60HM45RT3G Transistor modules MOSFET
APTCV60HM45RT3G Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTCV60TLM24T3G |
|
Hersteller: MICROCHIP TECHNOLOGY
APTCV60TLM24T3G Transistor modules MOSFET
APTCV60TLM24T3G Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTCV60TLM45T3G |
|
Hersteller: MICROCHIP TECHNOLOGY
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Collector current: 75A
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 130A
Type of semiconductor module: MOSFET/IGBT transistor
Case: SP3F
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 38A; SP3F; Press-in PCB; Idm: 130A
Semiconductor structure: diode/transistor
Drain-source voltage: 600V
Drain current: 38A
Collector current: 75A
On-state resistance: 45mΩ
Power dissipation: 250W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: Field Stop; SJ-MOSFET; Trench
Gate-source voltage: ±20V
Topology: NTC thermistor; three-level inverter; single-phase
Pulsed drain current: 130A
Type of semiconductor module: MOSFET/IGBT transistor
Case: SP3F
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH