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MT29C1G12MAAJVAMD-5 IT TR MT29C1G12MAAJVAMD-5 IT TR Micron Technology Inc. Description: IC FLSH NAND LPDDR 1.5G 130VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 130-VFBGA
Mounting Type: Surface Mount
Supplier Device Package: 130-VFBGA (8x9)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT29C1G12MAAJVAMD-5 IT TR MT29C1G12MAAJVAMD-5 IT TR Micron Technology Inc. Description: IC FLSH NAND LPDDR 1.5G 130VFBGA
Packaging: Cut Tape (CT)
Package / Case: 130-VFBGA
Mounting Type: Surface Mount
Supplier Device Package: 130-VFBGA (8x9)
DigiKey Programmable: Not Verified
auf Bestellung 197 Stücke:
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2+18.11 EUR
10+16.79 EUR
25+16.41 EUR
50+16.31 EUR
100+14.36 EUR
Mindestbestellmenge: 2 Stücke
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MTA4ATF1G64HZ-3G2F1 Micron Technology Inc. Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
auf Bestellung 100 Stücke:
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10+230.86 EUR
25+223.22 EUR
50+217.54 EUR
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MTA4ATF1G64HZ-2G6E1 Micron Technology Inc. atf4c1gx64hz.pdf Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Bulk
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2666
Produkt ist nicht verfügbar
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MTA4ATF1G64HZ-3G2B2 Micron Technology Inc. Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
Produkt ist nicht verfügbar
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MTA4ATF1G64HZ-3G2B1 Micron Technology Inc. Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
Produkt ist nicht verfügbar
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MTA4ATF1G64HZ-3G2E2 Micron Technology Inc. Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
Produkt ist nicht verfügbar
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MT46H16M32LFCM-5 IT:B MT46H16M32LFCM-5 IT:B Micron Technology Inc. MT46H32M%2C16M32LF.pdf Description: IC DRAM 512MBIT PAR 90VFBGA
Packaging: Tray
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 16M x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT29F4G01ABAFDWB-IT:F TR MT29F4G01ABAFDWB-IT:F TR Micron Technology Inc. Description: IC FLASH 4GBIT SPI 8UPDFN
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 8-UDFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 4G x 1
Memory Interface: SPI
Supplier Device Package: 8-UPDFN (8x6) (MLP8)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
auf Bestellung 2000 Stücke:
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2000+5.16 EUR
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MT29F4G01ABAFDWB-IT:F TR MT29F4G01ABAFDWB-IT:F TR Micron Technology Inc. Description: IC FLASH 4GBIT SPI 8UPDFN
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 8-UDFN
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 4G x 1
Memory Interface: SPI
Supplier Device Package: 8-UPDFN (8x6) (MLP8)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
auf Bestellung 3009 Stücke:
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4+6.15 EUR
10+5.75 EUR
25+5.58 EUR
50+5.45 EUR
100+5.32 EUR
250+5.15 EUR
500+5.03 EUR
1000+4.94 EUR
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MTGAAAA128GD1-AAZCTBYYES Micron Technology Inc. Description: DDR4 128GBYTE/1.125TBIT HRAS E3.
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
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MTGAAAA128GD1-AA1CTBYY Micron Technology Inc. Description: DDR4 128GBYTE/1.125TBIT HRAS E3.
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
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MTGAAAA256GD1-AA1CTBYY Micron Technology Inc. Description: DDR4 256GBYTE/2.25TBIT HRAS E3.S
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
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MTGAAAA256GD1-AAZCTBYYES Micron Technology Inc. Description: DDR4 256GBYTE/2.25TBIT HRAS E3.S
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 20 Stücke
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MTA8ATF1G64HZ-2G3B1 Micron Technology Inc. atf8c1gx64hz.pdf Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Produkt ist nicht verfügbar
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MTA8ATF1G64HZ-2G3A1 Micron Technology Inc. atf8c1gx64hz.pdf Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Produkt ist nicht verfügbar
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MTA8ATF1G64HZ-2G3E1 Micron Technology Inc. Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Produkt ist nicht verfügbar
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MT46V128M8TG-6T:A TR MT46V128M8TG-6T:A TR Micron Technology Inc. MT46V256M4%2C128M8%2C64M16.pdf Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT46V128M8P-6T:A TR MT46V128M8P-6T:A TR Micron Technology Inc. MT46V256M4%2C128M8%2C64M16.pdf Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT46V128M8P-75:A TR MT46V128M8P-75:A TR Micron Technology Inc. MT46V256M4%2C128M8%2C64M16.pdf Description: IC DRAM 1GBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT46V128M4FN-6:F TR MT46V128M4FN-6:F TR Micron Technology Inc. MT46V128M4%2C_64M8%2C_32M16.pdf Description: IC DRAM 512MBIT PAR 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (10x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT46V128M4TG-6T:F TR MT46V128M4TG-6T:F TR Micron Technology Inc. MT46V128M4%2C_64M8%2C_32M16.pdf Description: IC DRAM 512MBIT PAR 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT46V128M4FN-75:D TR MT46V128M4FN-75:D TR Micron Technology Inc. Description: IC DRAM 512MBIT PARALLEL 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (10x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT46V128M4TG-75:D TR MT46V128M4TG-75:D TR Micron Technology Inc. Description: IC DRAM 512MBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT46V128M8TG-75:A TR MT46V128M8TG-75:A TR Micron Technology Inc. MT46V256M4%2C128M8%2C64M16.pdf Description: IC DRAM 1GBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT46V128M8P-6T IT:A MT46V128M8P-6T IT:A Micron Technology Inc. MT46V256M4%2C128M8%2C64M16.pdf Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tray
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT46H128M16LFDD-48 IT:C MT46H128M16LFDD-48 IT:C Micron Technology Inc. t89m_auto_lpddr.pdf Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
auf Bestellung 3046 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.42 EUR
10+21.69 EUR
25+21.21 EUR
50+21.09 EUR
100+18.56 EUR
250+17.65 EUR
500+17.47 EUR
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MT46H128M16LFDD-48 AIT:C MT46H128M16LFDD-48 AIT:C Micron Technology Inc. t89m_auto_lpddr.pdf Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Grade: Automotive
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MT46H128M16LFDD-48 WT:C MT46H128M16LFDD-48 WT:C Micron Technology Inc. t89m_auto_lpddr.pdf Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Write Cycle Time - Word, Page: 14.4ns
Supplier Device Package: 60-VFBGA (8x9)
Memory Format: DRAM
Clock Frequency: 208 MHz
Technology: SDRAM - Mobile LPDDR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -25°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 128M x 16
Access Time: 5 ns
Memory Interface: Parallel
Produkt ist nicht verfügbar
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MT53E128M32D2FW-046 WT:A MT53E128M32D2FW-046 WT:A Micron Technology Inc. z19m_embedded_lpddr4_lpddr4x.pdf?rev=b44486ffff6f4c02bca9721a2becef25 Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -25°C ~ 85°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1360 Stücke
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MT53E128M32D2FW-046 WT:A TR MT53E128M32D2FW-046 WT:A TR Micron Technology Inc. z19m_embedded_lpddr4_lpddr4x.pdf?rev=b44486ffff6f4c02bca9721a2becef25 Description: IC DRAM 4GBIT PAR 200TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -25°C ~ 85°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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MT53E128M32D2FW-046 IT:A TR MT53E128M32D2FW-046 IT:A TR Micron Technology Inc. z19m_embedded_lpddr4_lpddr4x.pdf?rev=b44486ffff6f4c02bca9721a2becef25 Description: IC DRAM 4GBIT PAR 200TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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MT53E128M32D2FW-046 IT:A MT53E128M32D2FW-046 IT:A Micron Technology Inc. z19m_embedded_lpddr4_lpddr4x.pdf?rev=b44486ffff6f4c02bca9721a2becef25 Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Box
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1360 Stücke
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MT53E128M32D2FW-046 AIT:A TR MT53E128M32D2FW-046 AIT:A TR Micron Technology Inc. 200b_z19m_sdp_ddp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 4GBIT PAR 200TFBGA
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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MT53E128M32D2FW-046 AIT:A MT53E128M32D2FW-046 AIT:A Micron Technology Inc. 200b_z19m_sdp_ddp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 4GBIT PAR 200TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Box
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1360 Stücke
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MT53E128M32D2FW-046 AAT:A TR MT53E128M32D2FW-046 AAT:A TR Micron Technology Inc. 200b_z19m_sdp_ddp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 4GBIT PAR 200TFBGA
Qualification: AEC-Q100
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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MT53E128M32D2FW-046 AAT:A MT53E128M32D2FW-046 AAT:A Micron Technology Inc. 200b_z19m_sdp_ddp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 4GBIT PAR 200TFBGA
Qualification: AEC-Q100
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Box
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1360 Stücke
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MT53E128M32D2FW-046 AUT:A TR MT53E128M32D2FW-046 AUT:A TR Micron Technology Inc. 200b_z19m_sdp_ddp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 4GBIT PAR 200TFBGA
Qualification: AEC-Q100
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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MT53E384M32D2FW-046 IT:E TR MT53E384M32D2FW-046 IT:E TR Micron Technology Inc. Description: LPDDR4 12G 384MX32 FBGA DDP
Memory Organization: 384M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 12Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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MT53E128M32D2FW-046 AUT:A MT53E128M32D2FW-046 AUT:A Micron Technology Inc. 200b_z19m_sdp_ddp_auto_lpddr4_lpddr4x.pdf Description: IC DRAM 4GBIT PAR 200TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Qualification: AEC-Q100
Packaging: Box
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1360 Stücke
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MT53E384M32D2FW-046 IT:E MT53E384M32D2FW-046 IT:E Micron Technology Inc. Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 12Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 384M x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1360 Stücke
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MT53E384M32D2FW-046 AIT:E TR Micron Technology Inc. 200b_z1am_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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MT53E384M32D2FW-046 AIT:E Micron Technology Inc. 200b_z1am_ddp_qdp_auto_lpddr4_lpddr4x.pdf Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Box
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1360 Stücke
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MT53E256M32D2FW-046 AIT:B TR MT53E256M32D2FW-046 AIT:B TR Micron Technology Inc. 200b_z00m_sdp_ddp_auto_lpddr4_lpddr4x.pdf Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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MT53E256M32D2FW-046 AIT:B MT53E256M32D2FW-046 AIT:B Micron Technology Inc. 200b_z00m_sdp_ddp_auto_lpddr4_lpddr4x.pdf Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1360 Stücke
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MT53E256M32D2FW-046 AAT:B TR MT53E256M32D2FW-046 AAT:B TR Micron Technology Inc. 200b_z00m_sdp_ddp_auto_lpddr4_lpddr4x.pdf Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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MT53E256M32D2FW-046 AAT:B MT53E256M32D2FW-046 AAT:B Micron Technology Inc. 200b_z00m_sdp_ddp_auto_lpddr4_lpddr4x.pdf Description: LPDDR4 8G 256MX32 FBGA DDP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Memory Type: Volatile
Memory Size: 8Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Memory Format: DRAM
Packaging: Box
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Clock Frequency: 2.133 GHz
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1360 Stücke
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MT53E256M32D2FW-046 AUT:B TR MT53E256M32D2FW-046 AUT:B TR Micron Technology Inc. 200b_z00m_sdp_ddp_auto_lpddr4_lpddr4x.pdf Description: LPDDR4 8G 256MX32 FBGA DDP
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 8Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MT53E256M32D2FW-046 AUT:B MT53E256M32D2FW-046 AUT:B Micron Technology Inc. 200b_z00m_sdp_ddp_auto_lpddr4_lpddr4x.pdf Description: LPDDR4 8G 256MX32 FBGA DDP
Package / Case: 200-TFBGA
Packaging: Box
Memory Organization: 256M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 8Gbit
Mounting Type: Surface Mount
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1360 Stücke
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MT53E1G32D2FW-046 WT:C TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Memory Organization: 1G x 32
Memory Interface: Parallel
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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MT53E1G32D2FW-046 WT:C MT53E1G32D2FW-046 WT:C Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Memory Interface: Parallel
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Package / Case: 200-TFBGA
Memory Organization: 1G x 32
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1280 Stücke
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MT53E1G32D2FW-046 IT:C TR Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Memory Organization: 1G x 32
Memory Interface: Parallel
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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MT53E1G32D2FW-046 IT:C MT53E1G32D2FW-046 IT:C Micron Technology Inc. Description: IC DRAM 32GBIT PAR 200TFBGA
Memory Organization: 1G x 32
Memory Interface: Parallel
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Package / Case: 200-TFBGA
Packaging: Tray
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1280 Stücke
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MT48H32M16LFB4-6 AT:C TR MT48H32M16LFB4-6 AT:C TR Micron Technology Inc. y67m_512mb_mobile_lpsdr_at.pdf Description: IC DRAM 512MBIT PAR 54VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (8x8)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT40A256M16GE-075E AUT:B TR MT40A256M16GE-075E AUT:B TR Micron Technology Inc. 4gb_auto_ddr4_sdram.pdf Description: IC DRAM 4GBIT PARALLEL 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.33 GHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (9x14)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MTFC8GAMALBH-AIT ES TR MTFC8GAMALBH-AIT ES TR Micron Technology Inc. Description: IC FLASH 64GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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MTFC8GAMALNA-AAT MTFC8GAMALNA-AAT Micron Technology Inc. Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tray
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
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 Mindestbestellmenge: 980 Stücke
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MTFC8GAMALNA-AAT TR MTFC8GAMALNA-AAT TR Micron Technology Inc. Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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MTFC8GAMALBH-AAT ES TR MTFC8GAMALBH-AAT ES TR Micron Technology Inc. Description: IC FLASH 64GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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MTFC8GAMALNA-AAT ES TR MTFC8GAMALNA-AAT ES TR Micron Technology Inc. Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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MT29C1G12MAAJVAMD-5 IT TR
MT29C1G12MAAJVAMD-5 IT TR
Hersteller: Micron Technology Inc.
Description: IC FLSH NAND LPDDR 1.5G 130VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 130-VFBGA
Mounting Type: Surface Mount
Supplier Device Package: 130-VFBGA (8x9)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT29C1G12MAAJVAMD-5 IT TR
MT29C1G12MAAJVAMD-5 IT TR
Hersteller: Micron Technology Inc.
Description: IC FLSH NAND LPDDR 1.5G 130VFBGA
Packaging: Cut Tape (CT)
Package / Case: 130-VFBGA
Mounting Type: Surface Mount
Supplier Device Package: 130-VFBGA (8x9)
DigiKey Programmable: Not Verified
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.11 EUR
10+16.79 EUR
25+16.41 EUR
50+16.31 EUR
100+14.36 EUR
Mindestbestellmenge: 2 Stücke
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MTA4ATF1G64HZ-3G2F1
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+250.58 EUR
10+230.86 EUR
25+223.22 EUR
50+217.54 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MTA4ATF1G64HZ-2G6E1 atf4c1gx64hz.pdf
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Bulk
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2666
Produkt ist nicht verfügbar
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MTA4ATF1G64HZ-3G2B2
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MTA4ATF1G64HZ-3G2B1
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MTA4ATF1G64HZ-3G2E2
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
Produkt ist nicht verfügbar
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MT46H16M32LFCM-5 IT:B MT46H32M%2C16M32LF.pdf
MT46H16M32LFCM-5 IT:B
Hersteller: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 90VFBGA
Packaging: Tray
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 16M x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT29F4G01ABAFDWB-IT:F TR
MT29F4G01ABAFDWB-IT:F TR
Hersteller: Micron Technology Inc.
Description: IC FLASH 4GBIT SPI 8UPDFN
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 8-UDFN
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 4G x 1
Memory Interface: SPI
Supplier Device Package: 8-UPDFN (8x6) (MLP8)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+5.16 EUR
Mindestbestellmenge: 2000 Stücke
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MT29F4G01ABAFDWB-IT:F TR
MT29F4G01ABAFDWB-IT:F TR
Hersteller: Micron Technology Inc.
Description: IC FLASH 4GBIT SPI 8UPDFN
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 8-UDFN
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 4G x 1
Memory Interface: SPI
Supplier Device Package: 8-UPDFN (8x6) (MLP8)
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
auf Bestellung 3009 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.15 EUR
10+5.75 EUR
25+5.58 EUR
50+5.45 EUR
100+5.32 EUR
250+5.15 EUR
500+5.03 EUR
1000+4.94 EUR
Mindestbestellmenge: 4 Stücke
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MTGAAAA128GD1-AAZCTBYYES
Hersteller: Micron Technology Inc.
Description: DDR4 128GBYTE/1.125TBIT HRAS E3.
Packaging: Tray
Produkt ist nicht verfügbar
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MTGAAAA128GD1-AA1CTBYY
Hersteller: Micron Technology Inc.
Description: DDR4 128GBYTE/1.125TBIT HRAS E3.
Packaging: Tray
Produkt ist nicht verfügbar
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MTGAAAA256GD1-AA1CTBYY
Hersteller: Micron Technology Inc.
Description: DDR4 256GBYTE/2.25TBIT HRAS E3.S
Packaging: Tray
Produkt ist nicht verfügbar
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MTGAAAA256GD1-AAZCTBYYES
Hersteller: Micron Technology Inc.
Description: DDR4 256GBYTE/2.25TBIT HRAS E3.S
Packaging: Tray
Produkt ist nicht verfügbar
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MTA8ATF1G64HZ-2G3B1 atf8c1gx64hz.pdf
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Produkt ist nicht verfügbar
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MTA8ATF1G64HZ-2G3A1 atf8c1gx64hz.pdf
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Produkt ist nicht verfügbar
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MTA8ATF1G64HZ-2G3E1
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Produkt ist nicht verfügbar
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MT46V128M8TG-6T:A TR MT46V256M4%2C128M8%2C64M16.pdf
MT46V128M8TG-6T:A TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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MT46V128M8P-6T:A TR MT46V256M4%2C128M8%2C64M16.pdf
MT46V128M8P-6T:A TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT46V128M8P-75:A TR MT46V256M4%2C128M8%2C64M16.pdf
MT46V128M8P-75:A TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT46V128M4FN-6:F TR MT46V128M4%2C_64M8%2C_32M16.pdf
MT46V128M4FN-6:F TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (10x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT46V128M4TG-6T:F TR MT46V128M4%2C_64M8%2C_32M16.pdf
MT46V128M4TG-6T:F TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT46V128M4FN-75:D TR
MT46V128M4FN-75:D TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (10x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT46V128M4TG-75:D TR
MT46V128M4TG-75:D TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT46V128M8TG-75:A TR MT46V256M4%2C128M8%2C64M16.pdf
MT46V128M8TG-75:A TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT46V128M8P-6T IT:A MT46V256M4%2C128M8%2C64M16.pdf
MT46V128M8P-6T IT:A
Hersteller: Micron Technology Inc.
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tray
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT46H128M16LFDD-48 IT:C t89m_auto_lpddr.pdf
MT46H128M16LFDD-48 IT:C
Hersteller: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
auf Bestellung 3046 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+23.42 EUR
10+21.69 EUR
25+21.21 EUR
50+21.09 EUR
100+18.56 EUR
250+17.65 EUR
500+17.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MT46H128M16LFDD-48 AIT:C t89m_auto_lpddr.pdf
MT46H128M16LFDD-48 AIT:C
Hersteller: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Grade: Automotive
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT46H128M16LFDD-48 WT:C t89m_auto_lpddr.pdf
MT46H128M16LFDD-48 WT:C
Hersteller: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Write Cycle Time - Word, Page: 14.4ns
Supplier Device Package: 60-VFBGA (8x9)
Memory Format: DRAM
Clock Frequency: 208 MHz
Technology: SDRAM - Mobile LPDDR
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -25°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 2Gbit
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 128M x 16
Access Time: 5 ns
Memory Interface: Parallel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MT53E128M32D2FW-046 WT:A z19m_embedded_lpddr4_lpddr4x.pdf?rev=b44486ffff6f4c02bca9721a2becef25
MT53E128M32D2FW-046 WT:A
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Bulk
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -25°C ~ 85°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1360 Stücke
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MT53E128M32D2FW-046 WT:A TR z19m_embedded_lpddr4_lpddr4x.pdf?rev=b44486ffff6f4c02bca9721a2becef25
MT53E128M32D2FW-046 WT:A TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -25°C ~ 85°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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MT53E128M32D2FW-046 IT:A TR z19m_embedded_lpddr4_lpddr4x.pdf?rev=b44486ffff6f4c02bca9721a2becef25
MT53E128M32D2FW-046 IT:A TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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MT53E128M32D2FW-046 IT:A z19m_embedded_lpddr4_lpddr4x.pdf?rev=b44486ffff6f4c02bca9721a2becef25
MT53E128M32D2FW-046 IT:A
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Box
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1360 Stücke
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MT53E128M32D2FW-046 AIT:A TR 200b_z19m_sdp_ddp_auto_lpddr4_lpddr4x.pdf
MT53E128M32D2FW-046 AIT:A TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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MT53E128M32D2FW-046 AIT:A 200b_z19m_sdp_ddp_auto_lpddr4_lpddr4x.pdf
MT53E128M32D2FW-046 AIT:A
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Box
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MT53E128M32D2FW-046 AAT:A TR 200b_z19m_sdp_ddp_auto_lpddr4_lpddr4x.pdf
MT53E128M32D2FW-046 AAT:A TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Qualification: AEC-Q100
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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MT53E128M32D2FW-046 AAT:A 200b_z19m_sdp_ddp_auto_lpddr4_lpddr4x.pdf
MT53E128M32D2FW-046 AAT:A
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Qualification: AEC-Q100
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Box
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
Mindestbestellmenge: 1360 Stücke
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MT53E128M32D2FW-046 AUT:A TR 200b_z19m_sdp_ddp_auto_lpddr4_lpddr4x.pdf
MT53E128M32D2FW-046 AUT:A TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Qualification: AEC-Q100
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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MT53E384M32D2FW-046 IT:E TR
MT53E384M32D2FW-046 IT:E TR
Hersteller: Micron Technology Inc.
Description: LPDDR4 12G 384MX32 FBGA DDP
Memory Organization: 384M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Memory Type: Volatile
Memory Size: 12Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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MT53E128M32D2FW-046 AUT:A 200b_z19m_sdp_ddp_auto_lpddr4_lpddr4x.pdf
MT53E128M32D2FW-046 AUT:A
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 4Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Qualification: AEC-Q100
Packaging: Box
Produkt ist nicht verfügbar
Mindestbestellmenge: 1360 Stücke
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MT53E384M32D2FW-046 IT:E
MT53E384M32D2FW-046 IT:E
Hersteller: Micron Technology Inc.
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 12Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 384M x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT53E384M32D2FW-046 AIT:E TR 200b_z1am_ddp_qdp_auto_lpddr4_lpddr4x.pdf
Hersteller: Micron Technology Inc.
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT53E384M32D2FW-046 AIT:E 200b_z1am_ddp_qdp_auto_lpddr4_lpddr4x.pdf
Hersteller: Micron Technology Inc.
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Box
DigiKey Programmable: Not Verified
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MT53E256M32D2FW-046 AIT:B TR 200b_z00m_sdp_ddp_auto_lpddr4_lpddr4x.pdf
MT53E256M32D2FW-046 AIT:B TR
Hersteller: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MT53E256M32D2FW-046 AIT:B 200b_z00m_sdp_ddp_auto_lpddr4_lpddr4x.pdf
MT53E256M32D2FW-046 AIT:B
Hersteller: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MT53E256M32D2FW-046 AAT:B TR 200b_z00m_sdp_ddp_auto_lpddr4_lpddr4x.pdf
MT53E256M32D2FW-046 AAT:B TR
Hersteller: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MT53E256M32D2FW-046 AAT:B 200b_z00m_sdp_ddp_auto_lpddr4_lpddr4x.pdf
MT53E256M32D2FW-046 AAT:B
Hersteller: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Memory Type: Volatile
Memory Size: 8Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Memory Format: DRAM
Packaging: Box
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Clock Frequency: 2.133 GHz
Produkt ist nicht verfügbar
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MT53E256M32D2FW-046 AUT:B TR 200b_z00m_sdp_ddp_auto_lpddr4_lpddr4x.pdf
MT53E256M32D2FW-046 AUT:B TR
Hersteller: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 8Gbit
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 256M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4X
Voltage - Supply: 1.06V ~ 1.17V
Produkt ist nicht verfügbar
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MT53E256M32D2FW-046 AUT:B 200b_z00m_sdp_ddp_auto_lpddr4_lpddr4x.pdf
MT53E256M32D2FW-046 AUT:B
Hersteller: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Package / Case: 200-TFBGA
Packaging: Box
Memory Organization: 256M x 32
Access Time: 3.5 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 18ns
Grade: Automotive
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Memory Type: Volatile
Memory Size: 8Gbit
Mounting Type: Surface Mount
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MT53E1G32D2FW-046 WT:C TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Memory Organization: 1G x 32
Memory Interface: Parallel
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MT53E1G32D2FW-046 WT:C
MT53E1G32D2FW-046 WT:C
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Memory Interface: Parallel
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Package / Case: 200-TFBGA
Memory Organization: 1G x 32
Packaging: Tray
Produkt ist nicht verfügbar
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MT53E1G32D2FW-046 IT:C TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Memory Organization: 1G x 32
Memory Interface: Parallel
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Package / Case: 200-TFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MT53E1G32D2FW-046 IT:C
MT53E1G32D2FW-046 IT:C
Hersteller: Micron Technology Inc.
Description: IC DRAM 32GBIT PAR 200TFBGA
Memory Organization: 1G x 32
Memory Interface: Parallel
Supplier Device Package: 200-TFBGA (10x14.5)
Memory Format: DRAM
Clock Frequency: 2.133 GHz
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Package / Case: 200-TFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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MT48H32M16LFB4-6 AT:C TR y67m_512mb_mobile_lpsdr_at.pdf
MT48H32M16LFB4-6 AT:C TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 54VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPSDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 54-VFBGA (8x8)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MT40A256M16GE-075E AUT:B TR 4gb_auto_ddr4_sdram.pdf
MT40A256M16GE-075E AUT:B TR
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PARALLEL 96FBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.14V ~ 1.26V
Technology: SDRAM - DDR4
Clock Frequency: 1.33 GHz
Memory Format: DRAM
Supplier Device Package: 96-FBGA (9x14)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MTFC8GAMALBH-AIT ES TR
MTFC8GAMALBH-AIT ES TR
Hersteller: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MTFC8GAMALNA-AAT
MTFC8GAMALNA-AAT
Hersteller: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tray
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MTFC8GAMALNA-AAT TR
MTFC8GAMALNA-AAT TR
Hersteller: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MTFC8GAMALBH-AAT ES TR
MTFC8GAMALBH-AAT ES TR
Hersteller: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 153TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-TFBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 153-TFBGA (11.5x13)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MTFC8GAMALNA-AAT ES TR
MTFC8GAMALNA-AAT ES TR
Hersteller: Micron Technology Inc.
Description: IC FLASH 64GBIT MMC 100TBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-TBGA
Mounting Type: Surface Mount
Memory Size: 64Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Technology: FLASH - NAND
Memory Format: FLASH
Supplier Device Package: 100-TBGA (14x18)
Grade: Automotive
Memory Interface: MMC
Memory Organization: 8G x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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