Produkte > MICRON TECHNOLOGY INC. > Alle Produkte des Herstellers MICRON TECHNOLOGY INC. (10926) > Seite 170 nach 183
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| MT29F2G16ABAGAWP-AAT:G TR | Micron Technology Inc. |
Description: SLC 2G 128MX16 TSOP Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| MT29F2G16ABAGAWP-AAT:G TR | Micron Technology Inc. |
Description: SLC 2G 128MX16 TSOP Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified |
auf Bestellung 979 Stücke: Lieferzeit 10-14 Tag (e) |
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| MTFC128GAXAQEA-WT TR | Micron Technology Inc. |
Description: IC FLASH 1TBIT UFS3.1 153WFBGA Packaging: Tape & Reel (TR) Memory Size: 1Tbit Memory Type: Non-Volatile Operating Temperature: -25°C ~ 85°C Technology: FLASH - NAND (SLC) Memory Format: FLASH Memory Interface: UFS 3.1 Memory Organization: 128G x 8 |
Produkt ist nicht verfügbar |
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MTFC128GAXAQEA-WT | Micron Technology Inc. |
Description: IC FLASH 1TBIT UFS3.1 153WFBGA Packaging: Tray Package / Case: 153-WFBGA Mounting Type: Surface Mount Memory Size: 1Tbit Memory Type: Non-Volatile Operating Temperature: -25°C ~ 85°C Technology: FLASH - NAND (SLC) Memory Format: FLASH Supplier Device Package: 153-WFBGA (11.5x13) Memory Interface: UFS 3.1 Memory Organization: 128G x 8 |
Produkt ist nicht verfügbar |
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MT25QL01GBBB1EW9-0SIT TR | Micron Technology Inc. |
 Description: IC FLASH 1GBIT SPI 133MHZ 8WPDFNPackaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WPDFN (8x6) (MLP8) Write Cycle Time - Word, Page: 8ms, 2.8ms Memory Interface: SPI - Quad I/O Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| MT60B1G16HD-56B IT:D | Micron Technology Inc. |
Description: DDR5 16G 1GX16 FBGA Packaging: Bulk Package / Case: 102-VFBGA Mounting Type: Surface Mount Memory Size: 16Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Technology: SDRAM - DDR5 Clock Frequency: 2.8 GHz Memory Format: DRAM Supplier Device Package: 102-VFBGA (7.5x14) Memory Interface: POD Access Time: 16 ns Memory Organization: 1G x 16 |
Produkt ist nicht verfügbar |
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| N25Q008A11ESC40F TR | Micron Technology Inc. |
Description: IC FLASH 8MBIT SPI 108MHZ Packaging: Tape & Reel (TR) Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Write Cycle Time - Word, Page: 8ms, 5ms Memory Interface: SPI Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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N25Q016A11ESC40F TR | Micron Technology Inc. |
Description: IC FLASH 16MBIT SPI 108MHZ 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 8ms, 1ms Memory Interface: SPI Memory Organization: 4M x 4 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT28FW01GABA1HJS-0AAT TR | Micron Technology Inc. |
Description: IC FLASH 1GBIT PARALLEL 56TSOP Packaging: Tape & Reel (TR) Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 105 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT28FW01GABA1HPC-0AAT TR | Micron Technology Inc. |
Description: IC FLASH 1GBIT PARALLEL 64LBGA Packaging: Tape & Reel (TR) Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-LBGA (11x13) Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 105 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT28FW01GABA1LJS-0AAT TR | Micron Technology Inc. |
Description: IC FLASH 1GBIT PARALLEL 56TSOP Packaging: Tape & Reel (TR) Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 105 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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| MT28FW01GABA1HJS-0AAT | Micron Technology Inc. |
Description: IC FLASH 1GBIT PARALLEL 56TSOP Packaging: Bulk Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 105 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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| MT28FW01GABA1HPC-0AAT | Micron Technology Inc. |
Description: IC FLASH 1GBIT PARALLEL 64LBGA Packaging: Bulk Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-LBGA (11x13) Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 105 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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| MT28FW01GABA1LJS-0AAT | Micron Technology Inc. |
Description: IC FLASH 1GBIT PARALLEL 56TSOP Packaging: Bulk Package / Case: 56-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 56-TSOP Grade: Automotive Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 105 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT35XU512ABA1G12-0AUT | Micron Technology Inc. |
Description: IC FLASH 512MBIT XCCELA 24TPBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 24-T-PBGA (6x8) Memory Interface: Xccela Bus Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
auf Bestellung 402 Stücke: Lieferzeit 10-14 Tag (e) |
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MT29C1G12MAAJVAMD-5 IT TR | Micron Technology Inc. |
Description: IC FLSH NAND LPDDR 1.5G 130VFBGA Packaging: Tape & Reel (TR) Package / Case: 130-VFBGA Mounting Type: Surface Mount Supplier Device Package: 130-VFBGA (8x9) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT29C1G12MAAJVAMD-5 IT TR | Micron Technology Inc. |
Description: IC FLSH NAND LPDDR 1.5G 130VFBGA Packaging: Cut Tape (CT) Package / Case: 130-VFBGA Mounting Type: Surface Mount Supplier Device Package: 130-VFBGA (8x9) DigiKey Programmable: Not Verified |
auf Bestellung 197 Stücke: Lieferzeit 10-14 Tag (e) |
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| MTA4ATF1G64HZ-3G2F1 | Micron Technology Inc. |
Description: MODULE DDR4 SDRAM 8GB 260SODIMM Packaging: Tray Package / Case: 260-SODIMM Memory Size: 8GB Memory Type: DDR4 SDRAM Transfer Rate (Mb/s, MT/s, MHz): 3200 |
auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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| MTA4ATF1G64HZ-2G6E1 | Micron Technology Inc. |
Description: MODULE DDR4 SDRAM 8GB 260SODIMM Packaging: Bulk Package / Case: 260-SODIMM Memory Size: 8GB Memory Type: DDR4 SDRAM Transfer Rate (Mb/s, MT/s, MHz): 2666 |
Produkt ist nicht verfügbar |
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| MTA4ATF1G64HZ-3G2B2 | Micron Technology Inc. |
Description: MODULE DDR4 SDRAM 8GB 260SODIMM Packaging: Tray Package / Case: 260-SODIMM Memory Size: 8GB Memory Type: DDR4 SDRAM Transfer Rate (Mb/s, MT/s, MHz): 3200 |
Produkt ist nicht verfügbar |
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| MTA4ATF1G64HZ-3G2B1 | Micron Technology Inc. |
Description: MODULE DDR4 SDRAM 8GB 260SODIMM Packaging: Tray Package / Case: 260-SODIMM Memory Size: 8GB Memory Type: DDR4 SDRAM Transfer Rate (Mb/s, MT/s, MHz): 3200 |
Produkt ist nicht verfügbar |
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| MTA4ATF1G64HZ-3G2E2 | Micron Technology Inc. |
Description: MODULE DDR4 SDRAM 8GB 260SODIMM Packaging: Tray Package / Case: 260-SODIMM Memory Size: 8GB Memory Type: DDR4 SDRAM Transfer Rate (Mb/s, MT/s, MHz): 3200 |
Produkt ist nicht verfügbar |
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MT46H16M32LFCM-5 IT:B | Micron Technology Inc. |
Description: IC DRAM 512MBIT PAR 90VFBGA Packaging: Tray Package / Case: 90-VFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 200 MHz Memory Format: DRAM Supplier Device Package: 90-VFBGA (10x13) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5 ns Memory Organization: 16M x 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT29F4G01ABAFDWB-IT:F TR | Micron Technology Inc. |
Description: IC FLASH 4GBIT SPI 8UPDFN Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Memory Format: FLASH Supplier Device Package: 8-UPDFN (8x6) (MLP8) Memory Interface: SPI Memory Organization: 4G x 1 DigiKey Programmable: Not Verified |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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MT29F4G01ABAFDWB-IT:F TR | Micron Technology Inc. |
Description: IC FLASH 4GBIT SPI 8UPDFN Packaging: Cut Tape (CT) Package / Case: 8-UDFN Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Memory Format: FLASH Supplier Device Package: 8-UPDFN (8x6) (MLP8) Memory Interface: SPI Memory Organization: 4G x 1 DigiKey Programmable: Not Verified |
auf Bestellung 2491 Stücke: Lieferzeit 10-14 Tag (e) |
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| MTGAAAA128GD1-AAZCTBYYES | Micron Technology Inc. |
Description: DDR4 128GBYTE/1.125TBIT HRAS E3. Packaging: Tray |
Produkt ist nicht verfügbar |
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| MTGAAAA128GD1-AA1CTBYY | Micron Technology Inc. |
Description: DDR4 128GBYTE/1.125TBIT HRAS E3. Packaging: Tray |
Produkt ist nicht verfügbar |
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| MTGAAAA256GD1-AA1CTBYY | Micron Technology Inc. |
Description: DDR4 256GBYTE/2.25TBIT HRAS E3.S Packaging: Tray |
Produkt ist nicht verfügbar |
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| MTGAAAA256GD1-AAZCTBYYES | Micron Technology Inc. |
Description: DDR4 256GBYTE/2.25TBIT HRAS E3.S Packaging: Tray |
Produkt ist nicht verfügbar |
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| MTA8ATF1G64HZ-2G3B1 | Micron Technology Inc. |
Description: MODULE DDR4 SDRAM 8GB 260SODIMM Packaging: Tray Package / Case: 260-SODIMM Memory Size: 8GB Memory Type: DDR4 SDRAM Transfer Rate (Mb/s, MT/s, MHz): 2400 |
Produkt ist nicht verfügbar |
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| MTA8ATF1G64HZ-2G3A1 | Micron Technology Inc. |
Description: MODULE DDR4 SDRAM 8GB 260SODIMM Packaging: Tray Package / Case: 260-SODIMM Memory Size: 8GB Memory Type: DDR4 SDRAM Transfer Rate (Mb/s, MT/s, MHz): 2400 |
Produkt ist nicht verfügbar |
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| MTA8ATF1G64HZ-2G3E1 | Micron Technology Inc. |
Description: MODULE DDR4 SDRAM 8GB 260SODIMM Packaging: Tray Package / Case: 260-SODIMM Memory Size: 8GB Memory Type: DDR4 SDRAM Transfer Rate (Mb/s, MT/s, MHz): 2400 |
Produkt ist nicht verfügbar |
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MT46V128M8TG-6T:A TR | Micron Technology Inc. |
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 167 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT46V128M8P-6T:A TR | Micron Technology Inc. |
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 167 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT46V128M8P-75:A TR | Micron Technology Inc. |
Description: IC DRAM 1GBIT PARALLEL 66TSOP Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 750 ps Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT46V128M4FN-6:F TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PAR 60FBGA Packaging: Tape & Reel (TR) Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 167 MHz Memory Format: DRAM Supplier Device Package: 60-FBGA (10x12.5) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 128M x 4 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT46V128M4TG-6T:F TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PAR 66TSOP Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 167 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 128M x 4 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT46V128M4FN-75:D TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PARALLEL 60FBGA Packaging: Tape & Reel (TR) Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 60-FBGA (10x12.5) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 750 ps Memory Organization: 128M x 4 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT46V128M4TG-75:D TR | Micron Technology Inc. |
Description: IC DRAM 512MBIT PARALLEL 66TSOP Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 750 ps Memory Organization: 128M x 4 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT46V128M8TG-75:A TR | Micron Technology Inc. |
Description: IC DRAM 1GBIT PARALLEL 66TSOP Packaging: Tape & Reel (TR) Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 750 ps Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT46V128M8P-6T IT:A | Micron Technology Inc. |
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP Packaging: Tray Package / Case: 66-TSSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.3V ~ 2.7V Technology: SDRAM - DDR Clock Frequency: 167 MHz Memory Format: DRAM Supplier Device Package: 66-TSOP Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 700 ps Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT46H128M16LFDD-48 IT:C | Micron Technology Inc. |
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA Packaging: Bulk Package / Case: 60-VFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 208 MHz Memory Format: DRAM Supplier Device Package: 60-VFBGA (8x9) Write Cycle Time - Word, Page: 14.4ns Memory Interface: Parallel Access Time: 5 ns Memory Organization: 128M x 16 DigiKey Programmable: Not Verified |
auf Bestellung 3046 Stücke: Lieferzeit 10-14 Tag (e) |
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MT46H128M16LFDD-48 AIT:C | Micron Technology Inc. |
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA Packaging: Bulk Package / Case: 60-VFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 208 MHz Memory Format: DRAM Supplier Device Package: 60-VFBGA (8x9) Grade: Automotive Write Cycle Time - Word, Page: 14.4ns Memory Interface: Parallel Access Time: 5 ns Memory Organization: 128M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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MT46H128M16LFDD-48 WT:C | Micron Technology Inc. |
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA Packaging: Bulk Package / Case: 60-VFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -25°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 208 MHz Memory Format: DRAM Supplier Device Package: 60-VFBGA (8x9) Write Cycle Time - Word, Page: 14.4ns Memory Interface: Parallel Access Time: 5 ns Memory Organization: 128M x 16 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT53E128M32D2FW-046 WT:A | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Packaging: Bulk Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -25°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MT53E128M32D2FW-046 WT:A TR | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -25°C ~ 85°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MT53E128M32D2FW-046 IT:A TR | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MT53E128M32D2FW-046 IT:A | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MT53E128M32D2FW-046 AIT:A TR | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MT53E128M32D2FW-046 AIT:A | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MT53E128M32D2FW-046 AAT:A TR | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MT53E128M32D2FW-046 AAT:A | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MT53E128M32D2FW-046 AUT:A TR | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MT53E384M32D2FW-046 IT:E TR | Micron Technology Inc. |
Description: LPDDR4 12G 384MX32 FBGA DDP Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 12Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 384M x 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MT53E128M32D2FW-046 AUT:A | Micron Technology Inc. |
Description: IC DRAM 4GBIT PAR 200TFBGA Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 125°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MT53E384M32D2FW-046 IT:E | Micron Technology Inc. |
Description: LPDDR4 12G 384MX32 FBGA DDP Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 12Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 384M x 32 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MT53E384M32D2FW-046 AIT:E TR | Micron Technology Inc. |
Description: LPDDR4 12G 384MX32 FBGA DDP Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MT53E384M32D2FW-046 AIT:E | Micron Technology Inc. |
Description: LPDDR4 12G 384MX32 FBGA DDP Packaging: Box DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MT53E256M32D2FW-046 AIT:B TR | Micron Technology Inc. |
Description: LPDDR4 8G 256MX32 FBGA DDP Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 256M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MT53E256M32D2FW-046 AIT:B | Micron Technology Inc. |
Description: LPDDR4 8G 256MX32 FBGA DDP Packaging: Box Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 2.133 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 256M x 32 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MT29F2G16ABAGAWP-AAT:G TR |
Hersteller: Micron Technology Inc.
Description: SLC 2G 128MX16 TSOP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: SLC 2G 128MX16 TSOP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT29F2G16ABAGAWP-AAT:G TR |
Hersteller: Micron Technology Inc.
Description: SLC 2G 128MX16 TSOP
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Description: SLC 2G 128MX16 TSOP
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 979 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.53 EUR |
| 10+ | 5.92 EUR |
| 25+ | 5.79 EUR |
| 50+ | 5.76 EUR |
| 100+ | 5.17 EUR |
| 250+ | 5.15 EUR |
| 500+ | 4.96 EUR |
| MTFC128GAXAQEA-WT TR |
Hersteller: Micron Technology Inc.
Description: IC FLASH 1TBIT UFS3.1 153WFBGA
Packaging: Tape & Reel (TR)
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Memory Interface: UFS 3.1
Memory Organization: 128G x 8
Description: IC FLASH 1TBIT UFS3.1 153WFBGA
Packaging: Tape & Reel (TR)
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Memory Interface: UFS 3.1
Memory Organization: 128G x 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MTFC128GAXAQEA-WT |
Hersteller: Micron Technology Inc.
Description: IC FLASH 1TBIT UFS3.1 153WFBGA
Packaging: Tray
Package / Case: 153-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 153-WFBGA (11.5x13)
Memory Interface: UFS 3.1
Memory Organization: 128G x 8
Description: IC FLASH 1TBIT UFS3.1 153WFBGA
Packaging: Tray
Package / Case: 153-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -25°C ~ 85°C
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 153-WFBGA (11.5x13)
Memory Interface: UFS 3.1
Memory Organization: 128G x 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT25QL01GBBB1EW9-0SIT TR |
|
Hersteller: Micron Technology Inc.
Description: IC FLASH 1GBIT SPI 133MHZ 8WPDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WPDFN (8x6) (MLP8)
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT SPI 133MHZ 8WPDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WPDFN (8x6) (MLP8)
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI - Quad I/O
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT60B1G16HD-56B IT:D |
Hersteller: Micron Technology Inc.
Description: DDR5 16G 1GX16 FBGA
Packaging: Bulk
Package / Case: 102-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Technology: SDRAM - DDR5
Clock Frequency: 2.8 GHz
Memory Format: DRAM
Supplier Device Package: 102-VFBGA (7.5x14)
Memory Interface: POD
Access Time: 16 ns
Memory Organization: 1G x 16
Description: DDR5 16G 1GX16 FBGA
Packaging: Bulk
Package / Case: 102-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Technology: SDRAM - DDR5
Clock Frequency: 2.8 GHz
Memory Format: DRAM
Supplier Device Package: 102-VFBGA (7.5x14)
Memory Interface: POD
Access Time: 16 ns
Memory Organization: 1G x 16
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| N25Q008A11ESC40F TR |
Hersteller: Micron Technology Inc.
Description: IC FLASH 8MBIT SPI 108MHZ
Packaging: Tape & Reel (TR)
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 8MBIT SPI 108MHZ
Packaging: Tape & Reel (TR)
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Write Cycle Time - Word, Page: 8ms, 5ms
Memory Interface: SPI
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| N25Q016A11ESC40F TR |
Hersteller: Micron Technology Inc.
Description: IC FLASH 16MBIT SPI 108MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 8ms, 1ms
Memory Interface: SPI
Memory Organization: 4M x 4
DigiKey Programmable: Not Verified
Description: IC FLASH 16MBIT SPI 108MHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOP
Write Cycle Time - Word, Page: 8ms, 1ms
Memory Interface: SPI
Memory Organization: 4M x 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT28FW01GABA1HJS-0AAT TR |
Hersteller: Micron Technology Inc.
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 105 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 105 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT28FW01GABA1HPC-0AAT TR |
Hersteller: Micron Technology Inc.
Description: IC FLASH 1GBIT PARALLEL 64LBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-LBGA (11x13)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 105 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 1GBIT PARALLEL 64LBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-LBGA (11x13)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 105 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT28FW01GABA1LJS-0AAT TR |
Hersteller: Micron Technology Inc.
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 105 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 105 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT28FW01GABA1HJS-0AAT |
Hersteller: Micron Technology Inc.
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 105 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 105 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT28FW01GABA1HPC-0AAT |
Hersteller: Micron Technology Inc.
Description: IC FLASH 1GBIT PARALLEL 64LBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-LBGA (11x13)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 105 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 1GBIT PARALLEL 64LBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-LBGA (11x13)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 105 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT28FW01GABA1LJS-0AAT |
Hersteller: Micron Technology Inc.
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 105 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Bulk
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 105 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT35XU512ABA1G12-0AUT |
Hersteller: Micron Technology Inc.
Description: IC FLASH 512MBIT XCCELA 24TPBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Memory Interface: Xccela Bus
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT XCCELA 24TPBGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 24-T-PBGA (6x8)
Memory Interface: Xccela Bus
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
auf Bestellung 402 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 17.55 EUR |
| 10+ | 16.29 EUR |
| 25+ | 15.79 EUR |
| 40+ | 15.53 EUR |
| 80+ | 15.15 EUR |
| 230+ | 14.58 EUR |
| MT29C1G12MAAJVAMD-5 IT TR |
Hersteller: Micron Technology Inc.
Description: IC FLSH NAND LPDDR 1.5G 130VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 130-VFBGA
Mounting Type: Surface Mount
Supplier Device Package: 130-VFBGA (8x9)
DigiKey Programmable: Not Verified
Description: IC FLSH NAND LPDDR 1.5G 130VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 130-VFBGA
Mounting Type: Surface Mount
Supplier Device Package: 130-VFBGA (8x9)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT29C1G12MAAJVAMD-5 IT TR |
Hersteller: Micron Technology Inc.
Description: IC FLSH NAND LPDDR 1.5G 130VFBGA
Packaging: Cut Tape (CT)
Package / Case: 130-VFBGA
Mounting Type: Surface Mount
Supplier Device Package: 130-VFBGA (8x9)
DigiKey Programmable: Not Verified
Description: IC FLSH NAND LPDDR 1.5G 130VFBGA
Packaging: Cut Tape (CT)
Package / Case: 130-VFBGA
Mounting Type: Surface Mount
Supplier Device Package: 130-VFBGA (8x9)
DigiKey Programmable: Not Verified
auf Bestellung 197 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 15.22 EUR |
| 10+ | 14.11 EUR |
| 25+ | 13.79 EUR |
| 50+ | 13.71 EUR |
| 100+ | 12.07 EUR |
| MTA4ATF1G64HZ-3G2F1 |
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 93.76 EUR |
| 10+ | 86.95 EUR |
| 25+ | 83.84 EUR |
| 40+ | 81.76 EUR |
| MTA4ATF1G64HZ-2G6E1 |
|
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Bulk
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2666
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Bulk
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2666
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MTA4ATF1G64HZ-3G2B2 |
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MTA4ATF1G64HZ-3G2B1 |
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MTA4ATF1G64HZ-3G2E2 |
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 3200
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT46H16M32LFCM-5 IT:B |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 90VFBGA
Packaging: Tray
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 16M x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 512MBIT PAR 90VFBGA
Packaging: Tray
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 90-VFBGA (10x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 16M x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT29F4G01ABAFDWB-IT:F TR |
Hersteller: Micron Technology Inc.
Description: IC FLASH 4GBIT SPI 8UPDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 8-UPDFN (8x6) (MLP8)
Memory Interface: SPI
Memory Organization: 4G x 1
DigiKey Programmable: Not Verified
Description: IC FLASH 4GBIT SPI 8UPDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 8-UPDFN (8x6) (MLP8)
Memory Interface: SPI
Memory Organization: 4G x 1
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 4.26 EUR |
| MT29F4G01ABAFDWB-IT:F TR |
Hersteller: Micron Technology Inc.
Description: IC FLASH 4GBIT SPI 8UPDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 8-UPDFN (8x6) (MLP8)
Memory Interface: SPI
Memory Organization: 4G x 1
DigiKey Programmable: Not Verified
Description: IC FLASH 4GBIT SPI 8UPDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 8-UPDFN (8x6) (MLP8)
Memory Interface: SPI
Memory Organization: 4G x 1
DigiKey Programmable: Not Verified
auf Bestellung 2491 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.33 EUR |
| 10+ | 4.99 EUR |
| 25+ | 4.84 EUR |
| 50+ | 4.73 EUR |
| 100+ | 4.62 EUR |
| 250+ | 4.47 EUR |
| 500+ | 4.36 EUR |
| 1000+ | 4.29 EUR |
| MTA8ATF1G64HZ-2G3B1 |
|
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MTA8ATF1G64HZ-2G3A1 |
|
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MTA8ATF1G64HZ-2G3E1 |
Hersteller: Micron Technology Inc.
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Description: MODULE DDR4 SDRAM 8GB 260SODIMM
Packaging: Tray
Package / Case: 260-SODIMM
Memory Size: 8GB
Memory Type: DDR4 SDRAM
Transfer Rate (Mb/s, MT/s, MHz): 2400
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT46V128M8TG-6T:A TR |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT46V128M8P-6T:A TR |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT46V128M8P-75:A TR |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 1GBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT46V128M4FN-6:F TR |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (10x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Description: IC DRAM 512MBIT PAR 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (10x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT46V128M4TG-6T:F TR |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 512MBIT PAR 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Description: IC DRAM 512MBIT PAR 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT46V128M4FN-75:D TR |
Hersteller: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (10x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Description: IC DRAM 512MBIT PARALLEL 60FBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 60-FBGA (10x12.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT46V128M4TG-75:D TR |
Hersteller: Micron Technology Inc.
Description: IC DRAM 512MBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Description: IC DRAM 512MBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 4
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT46V128M8TG-75:A TR |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 1GBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 1GBIT PARALLEL 66TSOP
Packaging: Tape & Reel (TR)
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 750 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT46V128M8P-6T IT:A |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tray
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 1GBIT PAR 167MHZ 66TSOP
Packaging: Tray
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.3V ~ 2.7V
Technology: SDRAM - DDR
Clock Frequency: 167 MHz
Memory Format: DRAM
Supplier Device Package: 66-TSOP
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 700 ps
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT46H128M16LFDD-48 IT:C |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
auf Bestellung 3046 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 19.68 EUR |
| 10+ | 18.23 EUR |
| 25+ | 17.82 EUR |
| 50+ | 17.72 EUR |
| 100+ | 15.60 EUR |
| 250+ | 14.83 EUR |
| 500+ | 14.68 EUR |
| MT46H128M16LFDD-48 AIT:C |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Grade: Automotive
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Grade: Automotive
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT46H128M16LFDD-48 WT:C |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Packaging: Bulk
Package / Case: 60-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 208 MHz
Memory Format: DRAM
Supplier Device Package: 60-VFBGA (8x9)
Write Cycle Time - Word, Page: 14.4ns
Memory Interface: Parallel
Access Time: 5 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT53E128M32D2FW-046 WT:A |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Bulk
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Bulk
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT53E128M32D2FW-046 WT:A TR |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT53E128M32D2FW-046 IT:A TR |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT53E128M32D2FW-046 IT:A |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT53E128M32D2FW-046 AIT:A TR |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT53E128M32D2FW-046 AIT:A |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT53E128M32D2FW-046 AAT:A TR |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
Qualification: AEC-Q100
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT53E128M32D2FW-046 AAT:A |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT53E128M32D2FW-046 AUT:A TR |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT53E384M32D2FW-046 IT:E TR |
Hersteller: Micron Technology Inc.
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 12Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 384M x 32
DigiKey Programmable: Not Verified
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 12Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 384M x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT53E128M32D2FW-046 AUT:A |
|
Hersteller: Micron Technology Inc.
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 4GBIT PAR 200TFBGA
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT53E384M32D2FW-046 IT:E |
Hersteller: Micron Technology Inc.
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 12Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 384M x 32
DigiKey Programmable: Not Verified
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 12Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 384M x 32
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT53E384M32D2FW-046 AIT:E TR |
|
Hersteller: Micron Technology Inc.
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT53E384M32D2FW-046 AIT:E |
|
Hersteller: Micron Technology Inc.
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Box
DigiKey Programmable: Not Verified
Description: LPDDR4 12G 384MX32 FBGA DDP
Packaging: Box
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT53E256M32D2FW-046 AIT:B TR |
|
Hersteller: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT53E256M32D2FW-046 AIT:B |
|
Hersteller: Micron Technology Inc.
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: LPDDR4 8G 256MX32 FBGA DDP
Packaging: Box
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 256M x 32
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH