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1N5384C/TR12 1N5384C/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384/TR12 1N5384/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384CE3/TR13 1N5384CE3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384BE3/TR8 1N5384BE3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384BE3/TR13 1N5384BE3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384CE3/TR12 1N5384CE3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384AE3/TR12 1N5384AE3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384A/TR8 1N5384A/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384AE3/TR13 1N5384AE3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384E3/TR12 1N5384E3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384E3/TR13 1N5384E3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384/TR8 1N5384/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384CE3/TR8 1N5384CE3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 160V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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SM12e3/TR7 Microsemi Corporation sm03-sM36,E3.pdf Description: TVS DIODE 12VWM 19VC SOT23
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LX1672-03CPW LX1672-03CPW Microsemi Corporation 9003-lx1672-pdf Description: IC REG CTRLR BUCK 28TSSOP
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LX1672-05CPW LX1672-05CPW Microsemi Corporation 9003-lx1672-pdf Description: IC REG CTRLR BUCK 28TSSOP
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LX1672-03CLQ Microsemi Corporation 9003-lx1672-pdf Description: IC REG CTRLR BUCK 38MLPQ
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LX1672-06CLQ Microsemi Corporation 9003-lx1672-pdf Description: IC REG CTRLR BUCK 38MLPQ
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1N5918CG 1N5918CG Microsemi Corporation 1N5913BG_1N5956BG.pdf Description: DIODE ZENER 5.1V 1.25W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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1N5918DG 1N5918DG Microsemi Corporation 1N5913BG_1N5956BG.pdf Description: DIODE ZENER 5.1V 1.25W DO204AL
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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1N5918AG 1N5918AG Microsemi Corporation 1N5913BG_1N5956BG.pdf Description: DIODE ZENER 5.1V 1.25W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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1N5918BG 1N5918BG Microsemi Corporation 1N5913BG_1N5956BG.pdf Description: DIODE ZENER 5.1V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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WDS3-UFE4-12-DC Microsemi Corporation download_p.pl?res_id=211621&filename=2110545_UFE412_PB_126931.pdf Description: UFE4 BOARD
Packaging: Bulk
Package / Case: 676-BGA, FCBGA
Mounting Type: Surface Mount
Interface: Asynchronous Host Interface
Applications: Network Processor
Core Processor: UFE4
Supplier Device Package: 676-FCBGA (27x27)
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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JAN2N4957UB Microsemi Corporation 132607-lds-0313-1-datasheet Description: RF TRANS PNP 30V 30MA UB
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P6KE82AE3/TR13 P6KE82AE3/TR13 Microsemi Corporation rf01007_rb.pdf Description: TVS DIODE 70.1VWM 113VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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MRF581 MRF581 Microsemi Corporation 11675-mrf581-mrf581a-reva-datasheet Description: RF TRANS NPN 18V 5GHZ MICRO X
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Micro-X ceramic (84C)
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MRF581G MRF581G Microsemi Corporation 11675-mrf581-mrf581a-reva-datasheet Description: RF TRANS NPN 18V 5GHZ MICRO X
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Micro-X ceramic (84C)
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MRF581A MRF581A Microsemi Corporation 11675-mrf581-mrf581a-reva-datasheet Description: RF TRANS NPN 15V 5GHZ MICRO-X
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Micro-X ceramic (84C)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MRF581AG MRF581AG Microsemi Corporation 11675-mrf581-mrf581a-reva-datasheet Description: RF TRANS NPN 15V 5GHZ MACRO X
Packaging: Bulk
Package / Case: Macro-X
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Macro-X
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MRF5812GR2 MRF5812GR2 Microsemi Corporation MRF5812%28G%29R1%2CR2.pdf Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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MRF5812GR2 MRF5812GR2 Microsemi Corporation MRF5812%28G%29R1%2CR2.pdf Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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MRF5812G MRF5812G Microsemi Corporation 9536-mrf5812r1r2reva-datasheet Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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MRF5812 MRF5812 Microsemi Corporation 9536-mrf5812r1r2reva-datasheet Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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MRF5812R1 MRF5812R1 Microsemi Corporation 9536-mrf5812r1r2reva-datasheet Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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BR231D-28B2-6V Microsemi Corporation 126325-br231d Description: RELAY GEN PURPOSE 4PDT 10A 6V
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1N4109 (DO35) 1N4109 (DO35) Microsemi Corporation 10907-sa5-25-datasheet Description: DIODE ZENER 15V 400MW DO204AH
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3EZ24D5E3/TR12 3EZ24D5E3/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 24V 3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
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3EZ24D5E3/TR8 3EZ24D5E3/TR8 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 24V 3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
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3EZ24D5/TR8 3EZ24D5/TR8 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 24V 3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
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3EZ24D5/TR12 3EZ24D5/TR12 Microsemi Corporation 10926-sa5-67-datasheet Description: DIODE ZENER 24V 3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Produkt ist nicht verfügbar
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LXMG1811-05-61S LXMG1811-05-61S Microsemi Corporation 9451-lxmg1811-05-6xs-pdf Description: MOD INVERTER CCFL 6W 5V PROG
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LXMG1811-05-62 LXMG1811-05-62 Microsemi Corporation 9450-lxmg1811-05-6x-pdf Description: MOD INVERTER CCFL 6W 5V PROG
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LXMG1811-05-62S LXMG1811-05-62S Microsemi Corporation 9451-lxmg1811-05-6xs-pdf Description: MOD INVERTER CCFL 6W 5V PROG
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LXMG1811-05-61 LXMG1811-05-61 Microsemi Corporation 9450-lxmg1811-05-6x-pdf Description: MOD INVERTER CCFL 6W 5V PROG
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LXMG1800_LS LXMG1800_LS Microsemi Corporation LXMG1800_LS.pdf Description: AMBIENT LIGHT SENSOR BOARD ASSY
Packaging: Bulk
For Use With/Related Products: LXMG1811-05-6xS and LXMG1813-12-6xS
Accessory Type: Ambient Light Sensor Board
Produkt ist nicht verfügbar
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MMAD1103E3 MMAD1103E3 Microsemi Corporation 132791-mmad1103-datasheet Description: TVS DIODE 75VWM 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 75V (Max)
Supplier Device Package: 14-SOIC
Unidirectional Channels: 8
Voltage - Breakdown (Min): 90V
Power Line Protection: No
Part Status: Obsolete
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MMAD1103/TR13 MMAD1103/TR13 Microsemi Corporation 132791-mmad1103-datasheet Description: TVS DIODE 75VWM 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 75V (Max)
Supplier Device Package: 14-SOIC
Unidirectional Channels: 8
Voltage - Breakdown (Min): 90V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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RT3PE600L-CG484PROTO Microsemi Corporation 130714-radiation-tolerant-proasic3-low-power-space-flight-fpgas-datasheet Description: IC FPGA 270 I/O 484CCGA
Packaging: Box
Package / Case: 484-BFCCGA
Mounting Type: Surface Mount
Number of Gates: 600000
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 484-CCGA (23x23)
Total RAM Bits: 110592
Number of I/O: 270
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MXP5KE13CAe3 MXP5KE13CAe3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 13VWM 21.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MP5KE13CA MP5KE13CA Microsemi Corporation MP5KE5.0A-170CA(e3).pdf Description: TVS DIODE 13VWM 21.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP5KE13CAe3 MP5KE13CAe3 Microsemi Corporation MP5KE5.0A-170CA(e3).pdf Description: TVS DIODE 13VWM 21.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXP5KE13CA MXP5KE13CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 13VWM 21.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAP5KE13CAe3 MAP5KE13CAe3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 13VWM 21.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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1N4124 (DO35) 1N4124 (DO35) Microsemi Corporation 129734-lds-0245-2-datasheet Description: DIODE ZENER 43V 400MW DO35
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SMBJ5337BE3/TR13 SMBJ5337BE3/TR13 Microsemi Corporation 124875-lds-0246-2-datasheet Description: DIODE ZENER 4.7V 5W SMBJ
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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SMBJ5337BE3/TR13 SMBJ5337BE3/TR13 Microsemi Corporation 124875-lds-0246-2-datasheet Description: DIODE ZENER 4.7V 5W SMBJ
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Produkt ist nicht verfügbar
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APTGT400DA120D3G Microsemi Corporation APTGT400DA120D3G.pdf Description: IGBT MODULE 1200V 580A 2100W D3
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1.5KE220AE3/TR13 1.5KE220AE3/TR13 Microsemi Corporation RF01008_rE.pdf Description: TVS DIODE 185VWM 328VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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1N4760A G 1N4760A G Microsemi Corporation 10912-sa5-35-datasheet Description: DIODE ZENER 68V 1W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 51.7 V
Produkt ist nicht verfügbar
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1N4760 G 1N4760 G Microsemi Corporation 10912-sa5-35-datasheet Description: DIODE ZENER 68V 1W DO204AL
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 51.7 V
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1N5384C/TR12 1N5333B-88B.pdf
1N5384C/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
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1N5384/TR12 1N5333B-88B.pdf
1N5384/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
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1N5384CE3/TR13 1N5333B-88B.pdf
1N5384CE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384BE3/TR8 1N5333B-88B.pdf
1N5384BE3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384BE3/TR13 1N5333B-88B.pdf
1N5384BE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384CE3/TR12 1N5333B-88B.pdf
1N5384CE3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384AE3/TR12 1N5333B-88B.pdf
1N5384AE3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384A/TR8 1N5333B-88B.pdf
1N5384A/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384AE3/TR13 1N5333B-88B.pdf
1N5384AE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384E3/TR12 1N5333B-88B.pdf
1N5384E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384E3/TR13 1N5333B-88B.pdf
1N5384E3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384/TR8 1N5333B-88B.pdf
1N5384/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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1N5384CE3/TR8 1N5333B-88B.pdf
1N5384CE3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 160V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 115 V
Produkt ist nicht verfügbar
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SM12e3/TR7 sm03-sM36,E3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 12VWM 19VC SOT23
Produkt ist nicht verfügbar
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LX1672-03CPW 9003-lx1672-pdf
LX1672-03CPW
Hersteller: Microsemi Corporation
Description: IC REG CTRLR BUCK 28TSSOP
Produkt ist nicht verfügbar
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LX1672-05CPW 9003-lx1672-pdf
LX1672-05CPW
Hersteller: Microsemi Corporation
Description: IC REG CTRLR BUCK 28TSSOP
Produkt ist nicht verfügbar
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LX1672-03CLQ 9003-lx1672-pdf
Hersteller: Microsemi Corporation
Description: IC REG CTRLR BUCK 38MLPQ
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LX1672-06CLQ 9003-lx1672-pdf
Hersteller: Microsemi Corporation
Description: IC REG CTRLR BUCK 38MLPQ
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1N5918CG 1N5913BG_1N5956BG.pdf
1N5918CG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 1.25W DO204AL
Tolerance: ±2%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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1N5918DG 1N5913BG_1N5956BG.pdf
1N5918DG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 1.25W DO204AL
Tolerance: ±1%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Produkt ist nicht verfügbar
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1N5918AG 1N5913BG_1N5956BG.pdf
1N5918AG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 1.25W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5918BG 1N5913BG_1N5956BG.pdf
1N5918BG
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.1V 1.25W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 4 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.25 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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WDS3-UFE4-12-DC download_p.pl?res_id=211621&filename=2110545_UFE412_PB_126931.pdf
Hersteller: Microsemi Corporation
Description: UFE4 BOARD
Packaging: Bulk
Package / Case: 676-BGA, FCBGA
Mounting Type: Surface Mount
Interface: Asynchronous Host Interface
Applications: Network Processor
Core Processor: UFE4
Supplier Device Package: 676-FCBGA (27x27)
Part Status: Active
DigiKey Programmable: Not Verified
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JAN2N4957UB 132607-lds-0313-1-datasheet
Hersteller: Microsemi Corporation
Description: RF TRANS PNP 30V 30MA UB
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P6KE82AE3/TR13 rf01007_rb.pdf
P6KE82AE3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 70.1VWM 113VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.3A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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MRF581 11675-mrf581-mrf581a-reva-datasheet
MRF581
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 18V 5GHZ MICRO X
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Micro-X ceramic (84C)
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MRF581G 11675-mrf581-mrf581a-reva-datasheet
MRF581G
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 18V 5GHZ MICRO X
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 18V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Micro-X ceramic (84C)
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MRF581A 11675-mrf581-mrf581a-reva-datasheet
MRF581A
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ MICRO-X
Packaging: Bulk
Package / Case: Micro-X ceramic (84C)
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Micro-X ceramic (84C)
Part Status: Obsolete
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MRF581AG 11675-mrf581-mrf581a-reva-datasheet
MRF581AG
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ MACRO X
Packaging: Bulk
Package / Case: Macro-X
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
Supplier Device Package: Macro-X
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MRF5812GR2 MRF5812%28G%29R1%2CR2.pdf
MRF5812GR2
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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MRF5812GR2 MRF5812%28G%29R1%2CR2.pdf
MRF5812GR2
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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MRF5812G 9536-mrf5812r1r2reva-datasheet
MRF5812G
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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MRF5812 9536-mrf5812r1r2reva-datasheet
MRF5812
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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MRF5812R1 9536-mrf5812r1r2reva-datasheet
MRF5812R1
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 15V 5GHZ 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 13dB ~ 15.5dB
Power - Max: 1.25W
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 500MHz
Supplier Device Package: 8-SOIC
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BR231D-28B2-6V 126325-br231d
Hersteller: Microsemi Corporation
Description: RELAY GEN PURPOSE 4PDT 10A 6V
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1N4109 (DO35) 10907-sa5-25-datasheet
1N4109 (DO35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 15V 400MW DO204AH
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3EZ24D5E3/TR12 10926-sa5-67-datasheet
3EZ24D5E3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 24V 3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
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3EZ24D5E3/TR8 10926-sa5-67-datasheet
3EZ24D5E3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 24V 3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
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3EZ24D5/TR8 10926-sa5-67-datasheet
3EZ24D5/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 24V 3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
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3EZ24D5/TR12 10926-sa5-67-datasheet
3EZ24D5/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 24V 3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
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LXMG1811-05-61S 9451-lxmg1811-05-6xs-pdf
LXMG1811-05-61S
Hersteller: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
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LXMG1811-05-62 9450-lxmg1811-05-6x-pdf
LXMG1811-05-62
Hersteller: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
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LXMG1811-05-62S 9451-lxmg1811-05-6xs-pdf
LXMG1811-05-62S
Hersteller: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
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LXMG1811-05-61 9450-lxmg1811-05-6x-pdf
LXMG1811-05-61
Hersteller: Microsemi Corporation
Description: MOD INVERTER CCFL 6W 5V PROG
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LXMG1800_LS LXMG1800_LS.pdf
LXMG1800_LS
Hersteller: Microsemi Corporation
Description: AMBIENT LIGHT SENSOR BOARD ASSY
Packaging: Bulk
For Use With/Related Products: LXMG1811-05-6xS and LXMG1813-12-6xS
Accessory Type: Ambient Light Sensor Board
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MMAD1103E3 132791-mmad1103-datasheet
MMAD1103E3
Hersteller: Microsemi Corporation
Description: TVS DIODE 75VWM 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 75V (Max)
Supplier Device Package: 14-SOIC
Unidirectional Channels: 8
Voltage - Breakdown (Min): 90V
Power Line Protection: No
Part Status: Obsolete
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MMAD1103/TR13 132791-mmad1103-datasheet
MMAD1103/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 75VWM 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Ethernet
Capacitance @ Frequency: 1.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 75V (Max)
Supplier Device Package: 14-SOIC
Unidirectional Channels: 8
Voltage - Breakdown (Min): 90V
Power Line Protection: No
Part Status: Active
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RT3PE600L-CG484PROTO 130714-radiation-tolerant-proasic3-low-power-space-flight-fpgas-datasheet
Hersteller: Microsemi Corporation
Description: IC FPGA 270 I/O 484CCGA
Packaging: Box
Package / Case: 484-BFCCGA
Mounting Type: Surface Mount
Number of Gates: 600000
Operating Temperature: -55°C ~ 125°C (TJ)
Voltage - Supply: 1.425V ~ 1.575V
Supplier Device Package: 484-CCGA (23x23)
Total RAM Bits: 110592
Number of I/O: 270
DigiKey Programmable: Not Verified
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MXP5KE13CAe3 11043-p5ke-datasheet
MXP5KE13CAe3
Hersteller: Microsemi Corporation
Description: TVS DIODE 13VWM 21.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP5KE13CA MP5KE5.0A-170CA(e3).pdf
MP5KE13CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 13VWM 21.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP5KE13CAe3 MP5KE5.0A-170CA(e3).pdf
MP5KE13CAe3
Hersteller: Microsemi Corporation
Description: TVS DIODE 13VWM 21.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXP5KE13CA 11043-p5ke-datasheet
MXP5KE13CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 13VWM 21.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAP5KE13CAe3 11043-p5ke-datasheet
MAP5KE13CAe3
Hersteller: Microsemi Corporation
Description: TVS DIODE 13VWM 21.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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1N4124 (DO35) 129734-lds-0245-2-datasheet
1N4124 (DO35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 43V 400MW DO35
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SMBJ5337BE3/TR13 124875-lds-0246-2-datasheet
SMBJ5337BE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W SMBJ
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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SMBJ5337BE3/TR13 124875-lds-0246-2-datasheet
SMBJ5337BE3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 5W SMBJ
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 2 Ohms
Supplier Device Package: DO-214AA (SMBJ)
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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APTGT400DA120D3G APTGT400DA120D3G.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 580A 2100W D3
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1.5KE220AE3/TR13 RF01008_rE.pdf
1.5KE220AE3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 185VWM 328VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.6A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
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1N4760A G 10912-sa5-35-datasheet
1N4760A G
Hersteller: Microsemi Corporation
Description: DIODE ZENER 68V 1W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 51.7 V
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1N4760 G 10912-sa5-35-datasheet
1N4760 G
Hersteller: Microsemi Corporation
Description: DIODE ZENER 68V 1W DO204AL
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 68 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 51.7 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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