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APTGT150DA60TG Microsemi Corporation APTGT150DA60TG.pdf Description: IGBT MODULE 600V 225A 480W SP4
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APTGT150DU60TG Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=7735 Description: IGBT MODULE 600V 225A 480W SP4
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APTGT150H170G Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=7737 Description: IGBT MODULE 1700V 250A 890W SP6
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APTGT150SK60TG Microsemi Corporation APTGT150SK60TG.pdf Description: IGBT MODULE 600V 225A 480W SP4
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APTGT150DA170D1G Microsemi Corporation APTGT150DA170D1.pdf Description: IGBT MODULE 1700V 280A 780W D1
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APTGT150SK120D1G Microsemi Corporation Description: IGBT MODULE 1200V 220A 700W D1
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APTGT150SK170D1G Microsemi Corporation APTGT150SK170D1.pdf Description: IGBT MODULE 1700V 280A 780W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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APTGT150DA120D1G Microsemi Corporation Description: IGBT MODULE 1200V 220A 700W D1
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APTGT150A170G Microsemi Corporation Description: IGBT MODULE 1700V 250A 890W SP6
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APTGT150A60TG Microsemi Corporation APTGT150A60TG.pdf Description: IGBT MODULE 600V 225A 480W SP4
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APTGT150DU170G Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=7734 Description: IGBT MODULE 1700V 250A 890W SP6
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APTGT150A120D1G Microsemi Corporation Description: IGBT MODULE 1200V 220A 700W D1
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APTGT150A170D1G Microsemi Corporation Description: IGBT MODULE 1700V 280A 780W D1
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APTGT150DA120TG Microsemi Corporation APTGT150DA120TG.pdf Description: IGBT MODULE 1200V 220A 690W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V
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APTGT150DA170G Microsemi Corporation Description: IGBT MODULE 1700V 250A 890W SP6
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APTC80DA15T1G Microsemi Corporation APTC80DA15T1G.pdf Description: MOSFET N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4507 pF @ 25 V
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APTC80SK15T1G Microsemi Corporation APTC80SK15T1G.pdf Description: MOSFET N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4507 pF @ 25 V
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APTC80DSK15T3G Microsemi Corporation Description: MOSFET 2N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
Part Status: Obsolete
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APTC80DSK29T3G Microsemi Corporation APTC80DSK29T3G.pdf Description: MOSFET 2N-CH 800V 15A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SP3
Part Status: Obsolete
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APTC80A15T1G Microsemi Corporation APTC80A15T1G.pdf Description: MOSFET 2N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
Part Status: Obsolete
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DS31408DK Microsemi Corporation DS31408DK_2012May.pdf Description: KIT DEMO DS31408
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31408
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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DS31404DK Microsemi Corporation DS31404DK_2012May.pdf Description: KIT DEMO DS31404
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31404
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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DS31415DK Microsemi Corporation DS31415DK_2012May.pdf Description: EVAL BOARD FOR DS31415
Packaging: Box
Function: PLL
Type: Timing
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: DS31415
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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DS31400DK Microsemi Corporation DS31400DK_2012May.pdf Description: KIT DEMO DS31400
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31400
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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DS31407DK Microsemi Corporation DS31407DK_2012May.pdf Description: KIT DEMO DS31407
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31407
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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DS31406DK Microsemi Corporation DS31406DK_2012May.pdf Description: KIT DEMO DS31406
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31406
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
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APT20M19JVR APT20M19JVR Microsemi Corporation APT20M19JVR.pdf Description: MOSFET N-CH 200V 112A ISOTOP
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1N5250A (DO-35) 1N5250A (DO-35) Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 20V 500MW DO35
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
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1.5KE22CAE3/TR13 1.5KE22CAE3/TR13 Microsemi Corporation DS_278_1.5KE%20Series.pdf Description: TVS DIODE 18.8VWM 30.6VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 49A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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MP5KE22CA MP5KE22CA Microsemi Corporation MP5KE5.0A-170CA%28e3%29.pdf Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MP5KE22CAe3 MP5KE22CAe3 Microsemi Corporation MP5KE5.0A-170CA%28e3%29.pdf Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAP5KE22CA MAP5KE22CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MAP5KE22CAe3 MAP5KE22CAe3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXP5KE22CAe3 MXP5KE22CAe3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXP5KE22CA MXP5KE22CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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MXP5KE33CA MXP5KE33CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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APT5025BN Microsemi Corporation APT5025BN%2C_APT5030BN.pdf Description: MOSFET N-CH 500V 23A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 11.5A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
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APT50GT120B2RDLG APT50GT120B2RDLG Microsemi Corporation 7105-apt50gt120b2rdlg-datasheet Description: IGBT NPT 1200V 106A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/215ns
Switching Energy: 3585µJ (on), 1910µJ (off)
Test Condition: 800V, 50A, 4.7Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 694 W
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APT5022BNG Microsemi Corporation APT5020BN,_APT5022BN.pdf Description: MOSFET N-CH 500V 27A TO247AD
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APT50M80B2VRG APT50M80B2VRG Microsemi Corporation Description: MOSFET N-CH 500V 58A T-MAX
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APT50M65B2LLG APT50M65B2LLG Microsemi Corporation 6346-apt50m65b2llg-apt50m65lllg-datasheet Description: MOSFET N-CH 500V 67A T-MAX
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APT5020SVRG APT5020SVRG Microsemi Corporation Description: MOSFET N-CH 500V 26A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
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APT5014SLLG/TR APT5014SLLG/TR Microsemi Corporation APT5014xLL%28G%29.pdf Description: MOSFET N-CH 500V 35A TO247
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Power Dissipation (Max): 403W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
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P6KE300CAE3/TR13 P6KE300CAE3/TR13 Microsemi Corporation rf01007_rb.pdf Description: TVS DIODE 256VWM 414VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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APTGV25H120T3G Microsemi Corporation Description: IGBT MODULE 1200V 40A 156W SP3
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1N5375C/TR8 1N5375C/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375Ae3/TR8 1N5375Ae3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375e3/TR8 1N5375e3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375Ce3/TR12 1N5375Ce3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375/TR12 1N5375/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375Ce3/TR8 1N5375Ce3/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375C/TR12 1N5375C/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375e3/TR12 1N5375e3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375Ae3/TR12 1N5375Ae3/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375Ae3/TR13 1N5375Ae3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375e3/TR13 1N5375e3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375A/TR8 1N5375A/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5375/TR8 1N5375/TR8 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375A/TR12 1N5375A/TR12 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5375Ce3/TR13 1N5375Ce3/TR13 Microsemi Corporation 1N5333B-88B.pdf Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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APTGT150DA60TG APTGT150DA60TG.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 225A 480W SP4
Produkt ist nicht verfügbar
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APTGT150DU60TG index.php?option=com_docman&task=doc_download&gid=7735
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 225A 480W SP4
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APTGT150H170G index.php?option=com_docman&task=doc_download&gid=7737
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1700V 250A 890W SP6
Produkt ist nicht verfügbar
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APTGT150SK60TG APTGT150SK60TG.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 225A 480W SP4
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APTGT150DA170D1G APTGT150DA170D1.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1700V 280A 780W D1
Produkt ist nicht verfügbar
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APTGT150SK120D1G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 220A 700W D1
Produkt ist nicht verfügbar
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APTGT150SK170D1G APTGT150SK170D1.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1700V 280A 780W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 780 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Produkt ist nicht verfügbar
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APTGT150DA120D1G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 220A 700W D1
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APTGT150A170G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1700V 250A 890W SP6
Produkt ist nicht verfügbar
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APTGT150A60TG APTGT150A60TG.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 225A 480W SP4
Produkt ist nicht verfügbar
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APTGT150DU170G index.php?option=com_docman&task=doc_download&gid=7734
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1700V 250A 890W SP6
Produkt ist nicht verfügbar
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APTGT150A120D1G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 220A 700W D1
Produkt ist nicht verfügbar
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APTGT150A170D1G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1700V 280A 780W D1
Produkt ist nicht verfügbar
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APTGT150DA120TG APTGT150DA120TG.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 220A 690W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.7 nF @ 25 V
Produkt ist nicht verfügbar
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APTGT150DA170G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1700V 250A 890W SP6
Produkt ist nicht verfügbar
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APTC80DA15T1G APTC80DA15T1G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4507 pF @ 25 V
Produkt ist nicht verfügbar
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APTC80SK15T1G APTC80SK15T1G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4507 pF @ 25 V
Produkt ist nicht verfügbar
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APTC80DSK15T3G
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 800V 28A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP3
Part Status: Obsolete
Produkt ist nicht verfügbar
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APTC80DSK29T3G APTC80DSK29T3G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 800V 15A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 156W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SP3
Part Status: Obsolete
Produkt ist nicht verfügbar
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APTC80A15T1G APTC80A15T1G.pdf
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 800V 28A SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 277W
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 28A
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Supplier Device Package: SP1
Part Status: Obsolete
Produkt ist nicht verfügbar
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DS31408DK DS31408DK_2012May.pdf
Hersteller: Microsemi Corporation
Description: KIT DEMO DS31408
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31408
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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DS31404DK DS31404DK_2012May.pdf
Hersteller: Microsemi Corporation
Description: KIT DEMO DS31404
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31404
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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DS31415DK DS31415DK_2012May.pdf
Hersteller: Microsemi Corporation
Description: EVAL BOARD FOR DS31415
Packaging: Box
Function: PLL
Type: Timing
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: DS31415
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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DS31400DK DS31400DK_2012May.pdf
Hersteller: Microsemi Corporation
Description: KIT DEMO DS31400
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31400
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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DS31407DK DS31407DK_2012May.pdf
Hersteller: Microsemi Corporation
Description: KIT DEMO DS31407
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31407
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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DS31406DK DS31406DK_2012May.pdf
Hersteller: Microsemi Corporation
Description: KIT DEMO DS31406
Packaging: Box
Function: PLL
Type: Timing
Utilized IC / Part: DS31406
Supplied Contents: Board(s), Cable(s), Power Supply
Embedded: Yes, MCU, 8-Bit
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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APT20M19JVR APT20M19JVR.pdf
APT20M19JVR
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 112A ISOTOP
Produkt ist nicht verfügbar
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1N5250A (DO-35) 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5250A (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 20V 500MW DO35
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 15 V
Produkt ist nicht verfügbar
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1.5KE22CAE3/TR13 DS_278_1.5KE%20Series.pdf
1.5KE22CAE3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 18.8VWM 30.6VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 49A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Voltage - Clamping (Max) @ Ipp: 30.6V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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MP5KE22CA MP5KE5.0A-170CA%28e3%29.pdf
MP5KE22CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MP5KE22CAe3 MP5KE5.0A-170CA%28e3%29.pdf
MP5KE22CAe3
Hersteller: Microsemi Corporation
Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MAP5KE22CA 11043-p5ke-datasheet
MAP5KE22CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MAP5KE22CAe3 11043-p5ke-datasheet
MAP5KE22CAe3
Hersteller: Microsemi Corporation
Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MXP5KE22CAe3 11043-p5ke-datasheet
MXP5KE22CAe3
Hersteller: Microsemi Corporation
Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MXP5KE22CA 11043-p5ke-datasheet
MXP5KE22CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 22VWM 35.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 14.1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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MXP5KE33CA 11043-p5ke-datasheet
MXP5KE33CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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APT5025BN APT5025BN%2C_APT5030BN.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 23A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 11.5A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247AD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2950 pF @ 25 V
Produkt ist nicht verfügbar
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APT50GT120B2RDLG 7105-apt50gt120b2rdlg-datasheet
APT50GT120B2RDLG
Hersteller: Microsemi Corporation
Description: IGBT NPT 1200V 106A
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/215ns
Switching Energy: 3585µJ (on), 1910µJ (off)
Test Condition: 800V, 50A, 4.7Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 106 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 694 W
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+31.79 EUR
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APT5022BNG APT5020BN,_APT5022BN.pdf
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 27A TO247AD
Produkt ist nicht verfügbar
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APT50M80B2VRG
APT50M80B2VRG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 58A T-MAX
Produkt ist nicht verfügbar
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APT50M65B2LLG 6346-apt50m65b2llg-apt50m65lllg-datasheet
APT50M65B2LLG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 67A T-MAX
Produkt ist nicht verfügbar
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APT5020SVRG
APT5020SVRG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 26A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Produkt ist nicht verfügbar
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APT5014SLLG/TR APT5014xLL%28G%29.pdf
APT5014SLLG/TR
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 35A TO247
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 17.5A, 10V
Power Dissipation (Max): 403W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3261 pF @ 25 V
Produkt ist nicht verfügbar
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P6KE300CAE3/TR13 rf01007_rb.pdf
P6KE300CAE3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 256VWM 414VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.5A
Voltage - Reverse Standoff (Typ): 256V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 285V
Voltage - Clamping (Max) @ Ipp: 414V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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APTGV25H120T3G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 40A 156W SP3
Produkt ist nicht verfügbar
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1N5375C/TR8 1N5333B-88B.pdf
1N5375C/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375Ae3/TR8 1N5333B-88B.pdf
1N5375Ae3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375e3/TR8 1N5333B-88B.pdf
1N5375e3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375Ce3/TR12 1N5333B-88B.pdf
1N5375Ce3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375/TR12 1N5333B-88B.pdf
1N5375/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375Ce3/TR8 1N5333B-88B.pdf
1N5375Ce3/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375C/TR12 1N5333B-88B.pdf
1N5375C/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375e3/TR12 1N5333B-88B.pdf
1N5375e3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375Ae3/TR12 1N5333B-88B.pdf
1N5375Ae3/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375Ae3/TR13 1N5333B-88B.pdf
1N5375Ae3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375e3/TR13 1N5333B-88B.pdf
1N5375e3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375A/TR8 1N5333B-88B.pdf
1N5375A/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375/TR8 1N5333B-88B.pdf
1N5375/TR8
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375A/TR12 1N5333B-88B.pdf
1N5375A/TR12
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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1N5375Ce3/TR13 1N5333B-88B.pdf
1N5375Ce3/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 82V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 64 Ohms
Supplier Device Package: T-18
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 59 V
Produkt ist nicht verfügbar
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