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1N5227B (DO-35) 1N5227B (DO-35) Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 3.6V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
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MAP5KE13CA MAP5KE13CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 13VWM 21.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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JANTX2N685 JANTX2N685 Microsemi Corporation 124312-lds-0249 Description: TRIAC 200V TO-208AA
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MT8814AE1 MT8814AE1 Microsemi Corporation MT8814_Sept11.pdf Description: IC ANLG SWITCH ARRAY 8X12 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 65Ohm
-3db Bandwidth: 45MHz
Supplier Device Package: 40-PDIP
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Voltage - Supply, Dual (V±): ±4.5V
Multiplexer/Demultiplexer Circuit: 8:12
Number of Channels: 1
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MT8814APR1 Microsemi Corporation MT8814_Sept11.pdf Description: IC ANLG SWITCH ARRAY 8X12 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 65Ohm
-3db Bandwidth: 45MHz
Supplier Device Package: 44-PLCC
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Voltage - Supply, Dual (V±): ±4.5V
Multiplexer/Demultiplexer Circuit: 8:12
Number of Channels: 1
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MT8815APR1 Microsemi Corporation MT8815_sept11.pdf Description: IC ANLG SWITCH ARRAY 8X12 44PLCC
Packaging: Tray
Package / Case: 44-LCC
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 65Ohm
-3db Bandwidth: 45MHz
Supplier Device Package: 44-PLCC
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Voltage - Supply, Dual (V±): ±4.5V
Multiplexer/Demultiplexer Circuit: 8:12
Number of Channels: 1
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MT8814AP1 Microsemi Corporation MT8814_Sept11.pdf Description: IC ANLG SWITCH ARRAY 8X12 44PLCC
Packaging: Tube
Package / Case: 44-LCC
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 65Ohm
-3db Bandwidth: 45MHz
Supplier Device Package: 44-PLCC
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Voltage - Supply, Dual (V±): ±4.5V
Multiplexer/Demultiplexer Circuit: 8:12
Number of Channels: 1
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MT88E45BNR1 MT88E45BNR1 Microsemi Corporation 127020-mt88e45b-datasheet-jun2006 Description: IC TELECOM INTERFACE 20SSOP
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SMCG5653AE3/TR13 Microsemi Corporation SMC(G,J)5629-5665A,e3.pdf Description: TVS DIODE 58.1VWM 92VC DO215AB
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SMCG5653E3/TR13 Microsemi Corporation SMC(G,J)5629-5665A,e3.pdf Description: TVS DIODE 55.1VWM 98VC DO215AB
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SMCG5653A/TR13 Microsemi Corporation SMC%28G%2CJ%295629-5665A%2Ce3.pdf Description: TVS DIODE 58.1VWM 92VC DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-215AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCG5653/TR13 Microsemi Corporation SMC%28G%2CJ%295629-5665A%2Ce3.pdf Description: TVS DIODE 55.1VWM 98VC DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 55.1V
Supplier Device Package: DO-215AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 61.2V
Voltage - Clamping (Max) @ Ipp: 98V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N4736 G 1N4736 G Microsemi Corporation 10912-sa5-35-datasheet Description: DIODE ZENER 6.8V 1W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
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1N4734 G 1N4734 G Microsemi Corporation 10912-sa5-35-datasheet Description: DIODE ZENER 5.6V 1W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
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1N4105 (DO35) 1N4105 (DO35) Microsemi Corporation 129734-lds-0245-2-datasheet Description: DIODE ZENER 11V 400MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8.44 V
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1N4705 (DO35) 1N4705 (DO35) Microsemi Corporation 125997-lds-0240-datasheet Description: DIODE ZENER 18V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 13.6 V
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MS2228 Microsemi Corporation index.php?option=com_docman&task=doc_download&gid=9635 Description: RF TRANS NPN 65V 1.09GHZ M214
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MXLP5KE60A MXLP5KE60A Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 60VWM 96.8VC DO204AL
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MXP5KE54Ae3 MXP5KE54Ae3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 54VWM 87.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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-OPTBLU Microsemi Corporation Description: MODULEWITHLEADSBENTUP
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MAP5KE33CA MAP5KE33CA Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
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APT23F60S APT23F60S Microsemi Corporation 6774-apt23f60b-apt23f60s-datasheet Description: MOSFET N-CH 600V 24A D3PAK
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MAP5KE13Ae3 MAP5KE13Ae3 Microsemi Corporation 11043-p5ke-datasheet Description: TVS DIODE 13VWM 21.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
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JAN2N2325U4 Microsemi Corporation Description: SCR 150V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 150 V
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JANTXV2N2325 Microsemi Corporation 2N2323%20-%202N2329(A,AS,S).pdf Description: SCR 150V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 150 V
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JANTX2N2325 Microsemi Corporation 2N2323%20-%202N2329(A,AS,S).pdf Description: SCR 150V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 150 V
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JAN2N2325S Microsemi Corporation 2N2323%20-%202N2329(A,AS,S).pdf Description: SCR 150V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 150 V
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JANTXV2N2325U4 Microsemi Corporation Description: SCR 150V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 150 V
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JANTXV2N2325S Microsemi Corporation 2N2323%20-%202N2329(A,AS,S).pdf Description: SCR 150V TO5
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JAN2N2325 Microsemi Corporation 2N2323%20-%202N2329(A,AS,S).pdf Description: SCR 150V TO5
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JANTX2N2325S Microsemi Corporation 2N2323%20-%202N2329(A,AS,S).pdf Description: SCR 150V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 150 V
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JANTX2N2325U4 Microsemi Corporation Description: SCR 150V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 150 V
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2N2325U4 Microsemi Corporation Description: SCR 150V 200UA U4
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2N2325S Microsemi Corporation 11607-wt8-09-datasheet Description: SCR 150V 200UA TO39
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1.5KE27AE3/TR13 1.5KE27AE3/TR13 Microsemi Corporation RF01008_rE.pdf Description: TVS DIODE 23.1VWM 37.5VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: Yes
Part Status: Obsolete
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P6KE43AE3/TR13 P6KE43AE3/TR13 Microsemi Corporation rf01007_rb.pdf Description: TVS DIODE 36.8VWM 59.3VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.1A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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APT97N65LC6 Microsemi Corporation Description: MOSFET N-CH 650V 97A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 48.5A, 10V
Power Dissipation (Max): 862W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.96mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
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1N5226A (DO-35) 1N5226A (DO-35) Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 3.3V 500MW DO204AH
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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1N5226A (DO-35) 1N5226A (DO-35) Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 3.3V 500MW DO204AH
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.77 EUR
10+2.42 EUR
25+2.06 EUR
100+1.65 EUR
Mindestbestellmenge: 5
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1N5249A (DO-35) 1N5249A (DO-35) Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 19V 500MW DO35
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
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1N5249A (DO-35) 1N5249A (DO-35) Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 19V 500MW DO35
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
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10+2.56 EUR
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1N5225A(DO-35) 1N5225A(DO-35) Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 3V 500MW DO204AH
Tolerance: ±10%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 4784 Stücke:
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PDX16DPU13V12-DC2 Microsemi Corporation Description: POE PSE CONTROLLER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MPLAD6.5KP85CA MPLAD6.5KP85CA Microsemi Corporation 129479-rf01083-datasheet Description: TVS DIODE 85VWM 137VC PLAD
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MS1076C Microsemi Corporation Description: RF POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5224A (DO-35) 1N5224A (DO-35) Microsemi Corporation 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf Description: DIODE ZENER 2.8V 500MW DO204AH
Tolerance: ±10%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.8 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
auf Bestellung 3496 Stücke:
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MSDM50-08 Microsemi Corporation Description: BRIDGE RECT 3PHASE 800V 50A M2-1
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APTGV50H120BTPG Microsemi Corporation Description: IGBT MODULE 1200V 75A 270W SP6P
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APTGV50H120T3G APTGV50H120T3G Microsemi Corporation Description: IGBT MODULE 1200V 75A 270W SP3
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APTGT50H120TG Microsemi Corporation High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: IGBT MODULE 1200V 75A 277W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50DSK120T3G Microsemi Corporation doc_details Description: IGBT MODULE 1200V 75A 270W SP3
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APTGT50A120TG Microsemi Corporation 7881-aptgt50a120tg-datasheet Description: IGBT MODULE 1200V 75A 277W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50DA120D1G Microsemi Corporation Description: IGBT MODULE 1200V 75A 270W D1
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APTGT50SK120D1G Microsemi Corporation Description: IGBT MODULE 1200V 75A 270W D1
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APTGT50DH120T3G Microsemi Corporation Description: IGBT MODULE 1200V 75A 277W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTGT50A1202G Microsemi Corporation Description: IGBT MODULE 1200V 75A 277W SP2
Packaging: Bulk
Package / Case: SP2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
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APTCV60HM70RT3G Microsemi Corporation APTCV60HM70RT3G.pdf Description: IGBT MODULE 600V 50A 250W SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTCV60HM70BT3G Microsemi Corporation Description: IGBT MODULE 600V 50A 250W SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Boost Chopper, Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
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APTGF300DA120G APTGF300DA120G Microsemi Corporation APTGF300DA120G.pdf Description: IGBT MODULE 1200V 400A 1780W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1780 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
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APTGF300DU120G Microsemi Corporation APTGF300DU120G.pdf Description: IGBT MODULE 1200V 400A 1780W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1780 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
Produkt ist nicht verfügbar
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1N5227B (DO-35) 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5227B (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.6V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Produkt ist nicht verfügbar
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MAP5KE13CA 11043-p5ke-datasheet
MAP5KE13CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 13VWM 21.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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JANTX2N685 124312-lds-0249
JANTX2N685
Hersteller: Microsemi Corporation
Description: TRIAC 200V TO-208AA
Produkt ist nicht verfügbar
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MT8814AE1 MT8814_Sept11.pdf
MT8814AE1
Hersteller: Microsemi Corporation
Description: IC ANLG SWITCH ARRAY 8X12 40DIP
Packaging: Tube
Package / Case: 40-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 65Ohm
-3db Bandwidth: 45MHz
Supplier Device Package: 40-PDIP
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Voltage - Supply, Dual (V±): ±4.5V
Multiplexer/Demultiplexer Circuit: 8:12
Number of Channels: 1
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MT8814APR1 MT8814_Sept11.pdf
Hersteller: Microsemi Corporation
Description: IC ANLG SWITCH ARRAY 8X12 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 65Ohm
-3db Bandwidth: 45MHz
Supplier Device Package: 44-PLCC
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Voltage - Supply, Dual (V±): ±4.5V
Multiplexer/Demultiplexer Circuit: 8:12
Number of Channels: 1
Produkt ist nicht verfügbar
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MT8815APR1 MT8815_sept11.pdf
Hersteller: Microsemi Corporation
Description: IC ANLG SWITCH ARRAY 8X12 44PLCC
Packaging: Tray
Package / Case: 44-LCC
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 65Ohm
-3db Bandwidth: 45MHz
Supplier Device Package: 44-PLCC
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Voltage - Supply, Dual (V±): ±4.5V
Multiplexer/Demultiplexer Circuit: 8:12
Number of Channels: 1
Produkt ist nicht verfügbar
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MT8814AP1 MT8814_Sept11.pdf
Hersteller: Microsemi Corporation
Description: IC ANLG SWITCH ARRAY 8X12 44PLCC
Packaging: Tube
Package / Case: 44-LCC
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 65Ohm
-3db Bandwidth: 45MHz
Supplier Device Package: 44-PLCC
Voltage - Supply, Single (V+): 4.5V ~ 13.2V
Voltage - Supply, Dual (V±): ±4.5V
Multiplexer/Demultiplexer Circuit: 8:12
Number of Channels: 1
Produkt ist nicht verfügbar
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MT88E45BNR1 127020-mt88e45b-datasheet-jun2006
MT88E45BNR1
Hersteller: Microsemi Corporation
Description: IC TELECOM INTERFACE 20SSOP
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SMCG5653AE3/TR13 SMC(G,J)5629-5665A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 58.1VWM 92VC DO215AB
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SMCG5653E3/TR13 SMC(G,J)5629-5665A,e3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 55.1VWM 98VC DO215AB
Produkt ist nicht verfügbar
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SMCG5653A/TR13 SMC%28G%2CJ%295629-5665A%2Ce3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 58.1VWM 92VC DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: DO-215AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCG5653/TR13 SMC%28G%2CJ%295629-5665A%2Ce3.pdf
Hersteller: Microsemi Corporation
Description: TVS DIODE 55.1VWM 98VC DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 55.1V
Supplier Device Package: DO-215AB (SMCG)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 61.2V
Voltage - Clamping (Max) @ Ipp: 98V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1N4736 G 10912-sa5-35-datasheet
1N4736 G
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.8V 1W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
Produkt ist nicht verfügbar
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1N4734 G 10912-sa5-35-datasheet
1N4734 G
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.6V 1W DO204AL
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Produkt ist nicht verfügbar
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1N4105 (DO35) 129734-lds-0245-2-datasheet
1N4105 (DO35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 11V 400MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 8.44 V
Produkt ist nicht verfügbar
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1N4705 (DO35) 125997-lds-0240-datasheet
1N4705 (DO35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 18V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 13.6 V
Produkt ist nicht verfügbar
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MS2228 index.php?option=com_docman&task=doc_download&gid=9635
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 65V 1.09GHZ M214
Produkt ist nicht verfügbar
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MXLP5KE60A 11043-p5ke-datasheet
MXLP5KE60A
Hersteller: Microsemi Corporation
Description: TVS DIODE 60VWM 96.8VC DO204AL
Produkt ist nicht verfügbar
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MXP5KE54Ae3 11043-p5ke-datasheet
MXP5KE54Ae3
Hersteller: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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-OPTBLU
Hersteller: Microsemi Corporation
Description: MODULEWITHLEADSBENTUP
Produkt ist nicht verfügbar
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MAP5KE33CA 11043-p5ke-datasheet
MAP5KE33CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 33VWM 53.3VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.4A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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APT23F60S 6774-apt23f60b-apt23f60s-datasheet
APT23F60S
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 24A D3PAK
Produkt ist nicht verfügbar
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MAP5KE13Ae3 11043-p5ke-datasheet
MAP5KE13Ae3
Hersteller: Microsemi Corporation
Description: TVS DIODE 13VWM 21.5VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 23.2A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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JAN2N2325U4
Hersteller: Microsemi Corporation
Description: SCR 150V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 150 V
Produkt ist nicht verfügbar
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JANTXV2N2325 2N2323%20-%202N2329(A,AS,S).pdf
Hersteller: Microsemi Corporation
Description: SCR 150V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 150 V
Produkt ist nicht verfügbar
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JANTX2N2325 2N2323%20-%202N2329(A,AS,S).pdf
Hersteller: Microsemi Corporation
Description: SCR 150V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 150 V
Produkt ist nicht verfügbar
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JAN2N2325S 2N2323%20-%202N2329(A,AS,S).pdf
Hersteller: Microsemi Corporation
Description: SCR 150V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 150 V
Produkt ist nicht verfügbar
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JANTXV2N2325U4
Hersteller: Microsemi Corporation
Description: SCR 150V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 150 V
Produkt ist nicht verfügbar
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JANTXV2N2325S 2N2323%20-%202N2329(A,AS,S).pdf
Hersteller: Microsemi Corporation
Description: SCR 150V TO5
Produkt ist nicht verfügbar
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JAN2N2325 2N2323%20-%202N2329(A,AS,S).pdf
Hersteller: Microsemi Corporation
Description: SCR 150V TO5
Produkt ist nicht verfügbar
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JANTX2N2325S 2N2323%20-%202N2329(A,AS,S).pdf
Hersteller: Microsemi Corporation
Description: SCR 150V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-5
Part Status: Obsolete
Voltage - Off State: 150 V
Produkt ist nicht verfügbar
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JANTX2N2325U4
Hersteller: Microsemi Corporation
Description: SCR 150V U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
SCR Type: Sensitive Gate
Operating Temperature: -65°C ~ 125°C
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: U4
Part Status: Obsolete
Voltage - Off State: 150 V
Produkt ist nicht verfügbar
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2N2325U4
Hersteller: Microsemi Corporation
Description: SCR 150V 200UA U4
Produkt ist nicht verfügbar
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2N2325S 11607-wt8-09-datasheet
Hersteller: Microsemi Corporation
Description: SCR 150V 200UA TO39
Produkt ist nicht verfügbar
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1.5KE27AE3/TR13 RF01008_rE.pdf
1.5KE27AE3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 23.1VWM 37.5VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: Yes
Part Status: Obsolete
Produkt ist nicht verfügbar
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P6KE43AE3/TR13 rf01007_rb.pdf
P6KE43AE3/TR13
Hersteller: Microsemi Corporation
Description: TVS DIODE 36.8VWM 59.3VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.1A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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APT97N65LC6
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 650V 97A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 48.5A, 10V
Power Dissipation (Max): 862W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 2.96mA
Supplier Device Package: TO-264 [L]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Produkt ist nicht verfügbar
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1N5226A (DO-35) 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5226A (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.3V 500MW DO204AH
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Produkt ist nicht verfügbar
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1N5226A (DO-35) 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5226A (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.3V 500MW DO204AH
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.77 EUR
10+2.42 EUR
25+2.06 EUR
100+1.65 EUR
Mindestbestellmenge: 5
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1N5249A (DO-35) 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5249A (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 19V 500MW DO35
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
Produkt ist nicht verfügbar
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1N5249A (DO-35) 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5249A (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 19V 500MW DO35
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
auf Bestellung 1920 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.98 EUR
10+2.56 EUR
25+2.18 EUR
100+1.75 EUR
Mindestbestellmenge: 5
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1N5225A(DO-35) 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5225A(DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3V 500MW DO204AH
Tolerance: ±10%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3 V
Impedance (Max) (Zzt): 29 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 4784 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.92 EUR
100+3.65 EUR
Mindestbestellmenge: 5
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PDX16DPU13V12-DC2
Hersteller: Microsemi Corporation
Description: POE PSE CONTROLLER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
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MPLAD6.5KP85CA 129479-rf01083-datasheet
MPLAD6.5KP85CA
Hersteller: Microsemi Corporation
Description: TVS DIODE 85VWM 137VC PLAD
Produkt ist nicht verfügbar
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MS1076C
Hersteller: Microsemi Corporation
Description: RF POWER TRANSISTOR
Packaging: Bulk
Produkt ist nicht verfügbar
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1N5224A (DO-35) 1N5221%20-%201N5281B%2C%20e3%20DO-35.pdf
1N5224A (DO-35)
Hersteller: Microsemi Corporation
Description: DIODE ZENER 2.8V 500MW DO204AH
Tolerance: ±10%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.8 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 75 µA @ 1 V
auf Bestellung 3496 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.28 EUR
100+3.98 EUR
Mindestbestellmenge: 5
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MSDM50-08
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 50A M2-1
Produkt ist nicht verfügbar
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APTGV50H120BTPG
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 270W SP6P
Produkt ist nicht verfügbar
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APTGV50H120T3G
APTGV50H120T3G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 270W SP3
Produkt ist nicht verfügbar
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APTGT50H120TG High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 277W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
Produkt ist nicht verfügbar
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APTGT50DSK120T3G doc_details
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 270W SP3
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APTGT50A120TG 7881-aptgt50a120tg-datasheet
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 277W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
Produkt ist nicht verfügbar
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APTGT50DA120D1G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 270W D1
Produkt ist nicht verfügbar
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APTGT50SK120D1G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 270W D1
Produkt ist nicht verfügbar
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APTGT50DH120T3G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 277W SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
Produkt ist nicht verfügbar
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APTGT50A1202G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 277W SP2
Packaging: Bulk
Package / Case: SP2
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: SP2
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 277 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.6 nF @ 25 V
Produkt ist nicht verfügbar
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APTCV60HM70RT3G APTCV60HM70RT3G.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 50A 250W SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Produkt ist nicht verfügbar
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APTCV60HM70BT3G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 50A 250W SP3
Packaging: Tray
Package / Case: SP3
Mounting Type: Chassis Mount
Input: Standard
Configuration: Boost Chopper, Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 250 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.15 nF @ 25 V
Produkt ist nicht verfügbar
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APTGF300DA120G APTGF300DA120G.pdf
APTGF300DA120G
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 400A 1780W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1780 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
Produkt ist nicht verfügbar
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APTGF300DU120G APTGF300DU120G.pdf
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 400A 1780W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1780 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
Produkt ist nicht verfügbar
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