Produkte > MICROSEMI CORPORATION > Alle Produkte des Herstellers MICROSEMI CORPORATION (11173) > Seite 131 nach 187
| Foto | Bezeichnung | Hersteller | Beschreibung |
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1N5956AE3/TR13 | Microsemi Corporation |
 Description: DIODE ZENER 200V 1.5W DO204ALTolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 1200 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 152 V |
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1N5956AP/TR12 | Microsemi Corporation |
Description: DIODE ZENER 200V 1.5W DO204AL Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 1200 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 152 V |
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1N5956CPE3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 200V 1.5W DO204AL Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 1200 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 152 V |
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1N5956P/TR8 | Microsemi Corporation |
Description: DIODE ZENER 200V 1.5W DO204AL Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 200 V Impedance (Max) (Zzt): 1200 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Obsolete Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 152 V |
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| APTGT75A170D1G | Microsemi Corporation |
Description: IGBT MODULE 1700V 120A 520W D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A NTC Thermistor: No Supplier Device Package: D1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 520 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V |
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| APTGT75DA170D1G | Microsemi Corporation | Description: IGBT MODULE 1700V 120A 520W D1 |
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| APTGT25DA120D1G | Microsemi Corporation |
Description: IGBT MODULE 1200V 40A 140W D1 |
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| APTGT50A120D1G | Microsemi Corporation | Description: IGBT MODULE 1200V 75A 270W D1 |
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1.5KE250CAE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 214VWM 344VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5A Voltage - Reverse Standoff (Typ): 214V Supplier Device Package: CASE-1 Bidirectional Channels: 1 Voltage - Breakdown (Min): 237V Voltage - Clamping (Max) @ Ipp: 344V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete |
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SK310B/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 100V 3A SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
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SK310BE3/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 100V 3A SMB Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
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| SK310/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 3A 100V SMCJ Packaging: Tape & Reel (TR) Part Status: Active |
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| SK310E3/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 3A 100V SMCJ Packaging: Tape & Reel (TR) Part Status: Active |
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| MXPLAD30KP280A | Microsemi Corporation |
Description: TVS DIODE 280VWM 451VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 66A Voltage - Reverse Standoff (Typ): 280V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 311V Voltage - Clamping (Max) @ Ipp: 451V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Part Status: Active |
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| MXPLAD30KP350Ae3 | Microsemi Corporation |
Description: TVS DIODE 350VWM 564VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 53A Voltage - Reverse Standoff (Typ): 350V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 389V Voltage - Clamping (Max) @ Ipp: 564V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Part Status: Active |
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| MXPLAD30KP300A | Microsemi Corporation |
Description: TVS DIODE 300VWM 483VC PLAD |
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| MXPLAD30KP300Ae3 | Microsemi Corporation |
Description: TVS DIODE 300VWM 483VC PLAD |
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| MXPLAD30KP350A | Microsemi Corporation |
Description: TVS DIODE 350VWM 564VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 53A Voltage - Reverse Standoff (Typ): 350V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 389V Voltage - Clamping (Max) @ Ipp: 564V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Part Status: Active |
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| MXPLAD30KP220A | Microsemi Corporation |
Description: TVS DIODE 220VWM 356VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 84A Voltage - Reverse Standoff (Typ): 220V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 245V Voltage - Clamping (Max) @ Ipp: 356V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Part Status: Active |
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| MXPLAD30KP220Ae3 | Microsemi Corporation |
Description: TVS DIODE 220VWM 356VC PLAD |
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MXPLAD30KP400Ae3 | Microsemi Corporation |
Description: TVS DIODE 400VWM 644VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 46A Voltage - Reverse Standoff (Typ): 400V Supplier Device Package: PLAD Unidirectional Channels: 1 Voltage - Breakdown (Min): 444V Voltage - Clamping (Max) @ Ipp: 644V Power - Peak Pulse: 30000W (30kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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1N5365B | Microsemi Corporation |
Description: DIODE ZENER 36V 5W T18 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 11 Ohms Supplier Device Package: T-18 Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 25.9 V |
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JANTX1N4480CUS | Microsemi Corporation |
Description: DIODE ZENER 43V 1.5W D5A |
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JANTX1N4488DUS | Microsemi Corporation |
Description: DIODE ZENER 91V 1.5W D5A Tolerance: ±1% Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 91 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: D-5A Grade: Military Power - Max: 1.5 W Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 250 nA @ 72.8 V Qualification: MIL-PRF-19500/406 |
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JANTX1N4485DUS | Microsemi Corporation |
Description: DIODE ZENER 68V 1.5W D5A |
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JANTX1N4481DUS | Microsemi Corporation |
Description: DIODE ZENER 47V 1.5W D5A |
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JANTX1N4482CUS | Microsemi Corporation |
Description: DIODE ZENER 51V 1.5W D5A |
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P6KE51AE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 43.6VWM 70.1VC AXIAL Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.6A Voltage - Reverse Standoff (Typ): 43.6V Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 48.5V Voltage - Clamping (Max) @ Ipp: 70.1V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
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APT47N65BC3G | Microsemi Corporation |
Description: MOSFET N-CH 650V 47A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Supplier Device Package: TO-247 [B] Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V |
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| APT47N65SCS3G | Microsemi Corporation |
Description: MOSFET N-CH 650V 47A TO-247 Packaging: Bulk Operating Temperature: -55°C ~ 150°C (TJ) Power Dissipation (Max): 417W (Tc) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V |
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1N5230A (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 4.7V 500MW DO35 Tolerance: ±10% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 19 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 1.9 V |
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1N5230B (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 4.7V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 19 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 2 V |
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1N5358/TR8 | Microsemi Corporation |
Description: DIODE ZENER 22V 5W T18 Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: T-18 Part Status: Active Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 15.8 V |
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1N4102 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 8.7V 400MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 8.7 V Impedance (Max) (Zzt): 200 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 400 mW Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 6.61 V |
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1N4702 (DO35) | Microsemi Corporation |
Description: DIODE ZENER 15V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 15 V Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V |
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| 1N4437_FT | Microsemi Corporation |
Description: BRIDGE RECT 1PHASE 400V |
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| MDS60L | Microsemi Corporation |
Description: RF TRANS NPN 65V 1.09GHZ 55AW Packaging: Bulk Package / Case: 55AW Mounting Type: Chassis Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 10dB Power - Max: 120W Current - Collector (Ic) (Max): 4A Voltage - Collector Emitter Breakdown (Max): 65V DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V Frequency - Transition: 1.03GHz ~ 1.09GHz Supplier Device Package: 55AW Part Status: Obsolete |
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1.5KE130AE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 111VWM 179VC CASE-1 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 8.4A Voltage - Reverse Standoff (Typ): 111V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 124V Voltage - Clamping (Max) @ Ipp: 179V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Obsolete |
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MP5KE43AE3 | Microsemi Corporation |
Description: TVS DIODE 43VWM 69.4VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 7.2A Voltage - Reverse Standoff (Typ): 43V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 47.8V Voltage - Clamping (Max) @ Ipp: 69.4V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MAP5KE43A | Microsemi Corporation |
Description: TVS DIODE 43VWM 69.4VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 7.2A Voltage - Reverse Standoff (Typ): 43V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 47.8V Voltage - Clamping (Max) @ Ipp: 69.4V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Part Status: Obsolete Qualification: MIL-PRF-19500 |
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MXLP5KE43Ae3 | Microsemi Corporation |
Description: TVS DIODE 43VWM 69.4VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 7.2A Voltage - Reverse Standoff (Typ): 43V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 47.8V Voltage - Clamping (Max) @ Ipp: 69.4V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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1.5KE43AE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 36.8VWM 59.3VC DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 150°C Applications: General Purpose Current - Peak Pulse (10/1000µs): 25.3A Voltage - Reverse Standoff (Typ): 36.8V Supplier Device Package: CASE-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 40.9V Voltage - Clamping (Max) @ Ipp: 59.3V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: Yes |
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| LX2203AILD-TR | Microsemi Corporation |
Description: IC BATT CHG LI-ION 1CELL 10MLPD |
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| LX2203CLD | Microsemi Corporation |
Description: IC BATT CHG LI-ION 1CELL 10MLPD |
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| LX2203AILD | Microsemi Corporation |
Description: IC BATT CHG LI-ION 1CELL 10MLPD |
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| LX2203CLD-TR | Microsemi Corporation |
Description: IC BATT CHG LI-ION 1CELL 10MLPD |
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| MPT-36 | Microsemi Corporation |
Description: TVS DIODE 36VWM 54.3VC DO13 |
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| MPT-36C | Microsemi Corporation |
Description: TVS DIODE 36VWM 54.3VC DO13 |
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| JAN2N7236U | Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO267AB Packaging: Bulk Package / Case: TO-267AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Power Dissipation (Max): 4W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-267AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V |
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| JANTX2N7236U | Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO267AB Packaging: Bulk Package / Case: TO-267AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Power Dissipation (Max): 4W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-267AB Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Qualification: MIL-PRF-19500/595 |
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| JAN2N7236 | Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Power Dissipation (Max): 4W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Qualification: MIL-PRF-19500/595 |
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| JANTXV2N7236U | Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO267AB Packaging: Bulk Package / Case: TO-267AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Power Dissipation (Max): 4W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-267AB Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Qualification: MIL-PRF-19500/595 |
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| JANTX2N7236 | Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Power Dissipation (Max): 4W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Qualification: MIL-PRF-19500/595 |
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| JANTXV2N7236 | Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V Power Dissipation (Max): 4W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Qualification: MIL-PRF-19500/595 |
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| 2N7236U | Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO267AB Packaging: Bulk Package / Case: TO-267AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V Power Dissipation (Max): 4W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-267AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V |
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| 2N7236 | Microsemi Corporation |
Description: MOSFET P-CH 100V 18A TO254AA Packaging: Bulk Package / Case: TO-254-3, TO-254AA (Straight Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V Power Dissipation (Max): 4W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-254AA Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V |
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1N5236BDO35E3 | Microsemi Corporation |
Description: DIODE ZENER 7.5V 500MW DO35 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: DO-35 Part Status: Discontinued at Digi-Key Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 6 V |
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1N5236BDO35E3 | Microsemi Corporation |
Description: DIODE ZENER 7.5V 500MW DO35 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: DO-35 Part Status: Discontinued at Digi-Key Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 6 V |
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1N5236A (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 7.5V 500MW DO35 Packaging: Bulk Tolerance: ±10% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 5.7 V |
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1N5236B (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 7.5V 500MW DO35 Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 6 V |
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| 1N5956AE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
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| 1N5956AP/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
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| 1N5956CPE3/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
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| 1N5956P/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
Description: DIODE ZENER 200V 1.5W DO204AL
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 200 V
Impedance (Max) (Zzt): 1200 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Obsolete
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 152 V
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| APTGT75A170D1G |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1700V 120A 520W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 520 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Description: IGBT MODULE 1700V 120A 520W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 520 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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| APTGT75DA170D1G |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1700V 120A 520W D1
Description: IGBT MODULE 1700V 120A 520W D1
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| APTGT25DA120D1G |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 40A 140W D1
Description: IGBT MODULE 1200V 40A 140W D1
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| APTGT50A120D1G |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 270W D1
Description: IGBT MODULE 1200V 75A 270W D1
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| 1.5KE250CAE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 214VWM 344VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 214VWM 344VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: CASE-1
Bidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
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| SK310B/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 100V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE SCHOTTKY 100V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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| SK310BE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 100V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE SCHOTTKY 100V 3A SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
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| SK310/TR13 |
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 3A 100V SMCJ
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DIODE SCHOTTKY 3A 100V SMCJ
Packaging: Tape & Reel (TR)
Part Status: Active
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| SK310E3/TR13 |
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 3A 100V SMCJ
Packaging: Tape & Reel (TR)
Part Status: Active
Description: DIODE SCHOTTKY 3A 100V SMCJ
Packaging: Tape & Reel (TR)
Part Status: Active
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| MXPLAD30KP280A |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 280VWM 451VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 66A
Voltage - Reverse Standoff (Typ): 280V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 311V
Voltage - Clamping (Max) @ Ipp: 451V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 280VWM 451VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 66A
Voltage - Reverse Standoff (Typ): 280V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 311V
Voltage - Clamping (Max) @ Ipp: 451V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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| MXPLAD30KP350Ae3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 350VWM 564VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 350V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 389V
Voltage - Clamping (Max) @ Ipp: 564V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 350VWM 564VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 350V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 389V
Voltage - Clamping (Max) @ Ipp: 564V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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| MXPLAD30KP300A |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 300VWM 483VC PLAD
Description: TVS DIODE 300VWM 483VC PLAD
Produkt ist nicht verfügbar
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| MXPLAD30KP300Ae3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 300VWM 483VC PLAD
Description: TVS DIODE 300VWM 483VC PLAD
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| MXPLAD30KP350A |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 350VWM 564VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 350V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 389V
Voltage - Clamping (Max) @ Ipp: 564V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 350VWM 564VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 350V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 389V
Voltage - Clamping (Max) @ Ipp: 564V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MXPLAD30KP220A |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 220VWM 356VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84A
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 356V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 220VWM 356VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 84A
Voltage - Reverse Standoff (Typ): 220V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 245V
Voltage - Clamping (Max) @ Ipp: 356V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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| MXPLAD30KP220Ae3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 220VWM 356VC PLAD
Description: TVS DIODE 220VWM 356VC PLAD
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MXPLAD30KP400Ae3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 400VWM 644VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46A
Voltage - Reverse Standoff (Typ): 400V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 444V
Voltage - Clamping (Max) @ Ipp: 644V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 400VWM 644VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 46A
Voltage - Reverse Standoff (Typ): 400V
Supplier Device Package: PLAD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 444V
Voltage - Clamping (Max) @ Ipp: 644V
Power - Peak Pulse: 30000W (30kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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| 1N5365B |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 36V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 25.9 V
Description: DIODE ZENER 36V 5W T18
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 25.9 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| JANTX1N4480CUS |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 43V 1.5W D5A
Description: DIODE ZENER 43V 1.5W D5A
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| JANTX1N4488DUS |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 91V 1.5W D5A
Tolerance: ±1%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 250 nA @ 72.8 V
Qualification: MIL-PRF-19500/406
Description: DIODE ZENER 91V 1.5W D5A
Tolerance: ±1%
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: D-5A
Grade: Military
Power - Max: 1.5 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 250 nA @ 72.8 V
Qualification: MIL-PRF-19500/406
Produkt ist nicht verfügbar
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| JANTX1N4485DUS |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 68V 1.5W D5A
Description: DIODE ZENER 68V 1.5W D5A
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| JANTX1N4481DUS |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 47V 1.5W D5A
Description: DIODE ZENER 47V 1.5W D5A
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| JANTX1N4482CUS |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 51V 1.5W D5A
Description: DIODE ZENER 51V 1.5W D5A
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| P6KE51AE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 43.6VWM 70.1VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 43.6VWM 70.1VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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| APT47N65BC3G |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 650V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
Description: MOSFET N-CH 650V 47A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Supplier Device Package: TO-247 [B]
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
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| APT47N65SCS3G |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 650V 47A TO-247
Packaging: Bulk
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 417W (Tc)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Description: MOSFET N-CH 650V 47A TO-247
Packaging: Bulk
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 417W (Tc)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
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| 1N5230A (DO-35) |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1.9 V
Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±10%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1.9 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1N5230B (DO-35) |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 2 V
Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 2 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1N5358/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 22V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 15.8 V
Description: DIODE ZENER 22V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: T-18
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 15.8 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1N4102 (DO35) |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 8.7V 400MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.61 V
Description: DIODE ZENER 8.7V 400MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 200 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.61 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1N4702 (DO35) |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.4 V
Produkt ist nicht verfügbar
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| 1N4437_FT |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 400V
Description: BRIDGE RECT 1PHASE 400V
Produkt ist nicht verfügbar
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| MDS60L |
|
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 65V 1.09GHZ 55AW
Packaging: Bulk
Package / Case: 55AW
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 10dB
Power - Max: 120W
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Supplier Device Package: 55AW
Part Status: Obsolete
Description: RF TRANS NPN 65V 1.09GHZ 55AW
Packaging: Bulk
Package / Case: 55AW
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 10dB
Power - Max: 120W
Current - Collector (Ic) (Max): 4A
Voltage - Collector Emitter Breakdown (Max): 65V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
Frequency - Transition: 1.03GHz ~ 1.09GHz
Supplier Device Package: 55AW
Part Status: Obsolete
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1.5KE130AE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 111VWM 179VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.4A
Voltage - Reverse Standoff (Typ): 111V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 111VWM 179VC CASE-1
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.4A
Voltage - Reverse Standoff (Typ): 111V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 124V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MP5KE43AE3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 43VWM 69.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 43VWM 69.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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| MAP5KE43A |
Hersteller: Microsemi Corporation
Description: TVS DIODE 43VWM 69.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Description: TVS DIODE 43VWM 69.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MXLP5KE43Ae3 |
Hersteller: Microsemi Corporation
Description: TVS DIODE 43VWM 69.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 43VWM 69.4VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1.5KE43AE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 36.8VWM 59.3VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.3A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: Yes
Description: TVS DIODE 36.8VWM 59.3VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 25.3A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: CASE-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: Yes
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LX2203AILD-TR |
|
Hersteller: Microsemi Corporation
Description: IC BATT CHG LI-ION 1CELL 10MLPD
Description: IC BATT CHG LI-ION 1CELL 10MLPD
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LX2203CLD |
|
Hersteller: Microsemi Corporation
Description: IC BATT CHG LI-ION 1CELL 10MLPD
Description: IC BATT CHG LI-ION 1CELL 10MLPD
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LX2203AILD |
|
Hersteller: Microsemi Corporation
Description: IC BATT CHG LI-ION 1CELL 10MLPD
Description: IC BATT CHG LI-ION 1CELL 10MLPD
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LX2203CLD-TR |
|
Hersteller: Microsemi Corporation
Description: IC BATT CHG LI-ION 1CELL 10MLPD
Description: IC BATT CHG LI-ION 1CELL 10MLPD
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MPT-36 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 36VWM 54.3VC DO13
Description: TVS DIODE 36VWM 54.3VC DO13
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MPT-36C |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 36VWM 54.3VC DO13
Description: TVS DIODE 36VWM 54.3VC DO13
Produkt ist nicht verfügbar
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| JAN2N7236U |
|
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
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| JANTX2N7236U |
|
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Qualification: MIL-PRF-19500/595
Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Qualification: MIL-PRF-19500/595
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Stück im Wert von UAH
| JAN2N7236 |
|
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Qualification: MIL-PRF-19500/595
Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Qualification: MIL-PRF-19500/595
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Stück im Wert von UAH
| JANTXV2N7236U |
|
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Qualification: MIL-PRF-19500/595
Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Qualification: MIL-PRF-19500/595
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Stück im Wert von UAH
| JANTX2N7236 |
|
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Qualification: MIL-PRF-19500/595
Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Qualification: MIL-PRF-19500/595
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Stück im Wert von UAH
| JANTXV2N7236 |
|
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Qualification: MIL-PRF-19500/595
Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 18A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Qualification: MIL-PRF-19500/595
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Stück im Wert von UAH
| 2N7236U |
|
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Description: MOSFET P-CH 100V 18A TO267AB
Packaging: Bulk
Package / Case: TO-267AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-267AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
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Stück im Wert von UAH
| 2N7236 |
|
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Description: MOSFET P-CH 100V 18A TO254AA
Packaging: Bulk
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 11A, 10V
Power Dissipation (Max): 4W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-254AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
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Stück im Wert von UAH
| 1N5236BDO35E3 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1N5236BDO35E3 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1N5236A (DO-35) |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5.7 V
Description: DIODE ZENER 7.5V 500MW DO35
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5.7 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5236B (DO-35) |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Description: DIODE ZENER 7.5V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH