Produkte > MICROSEMI CORPORATION > Alle Produkte des Herstellers MICROSEMI CORPORATION (11190) > Seite 141 nach 187
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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MAP5KE54A | Microsemi Corporation |
 Description: TVS DIODE 54VWM 87.1VC DO204ALPackaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.7A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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MAP5KE7.5Ae3 | Microsemi Corporation |
Description: TVS DIODE 7.5VWM 12.9VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 38.8A Voltage - Reverse Standoff (Typ): 7.5V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 8.33V Voltage - Clamping (Max) @ Ipp: 12.9V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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MP5KE85A | Microsemi Corporation |
Description: TVS DIODE 85VWM 137VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.6A Voltage - Reverse Standoff (Typ): 85V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 94.4V Voltage - Clamping (Max) @ Ipp: 137V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Part Status: Obsolete Qualification: MIL-PRF-19500 |
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MXLP5KE6.5CAe3 | Microsemi Corporation |
Description: TVS DIODE 6.5VWM 11.2VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 44.7A Voltage - Reverse Standoff (Typ): 6.5V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 7.22V Voltage - Clamping (Max) @ Ipp: 11.2V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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APTGF50VDA120T3G | Microsemi Corporation |
Description: IGBT MODULE 1200V 70A 312W SP3 |
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MP5KE54A | Microsemi Corporation |
Description: TVS DIODE 54VWM 87.1VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.7A Voltage - Reverse Standoff (Typ): 54V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 60V Voltage - Clamping (Max) @ Ipp: 87.1V Power - Peak Pulse: 500W Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
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| APTGT30SK170T1G | Microsemi Corporation |
Description: IGBT MODULE 1700V 45A 210W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Part Status: Obsolete Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 210 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
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| APTGT30A170D1G | Microsemi Corporation |
Description: IGBT MODULE 1700V 45A 210W D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A NTC Thermistor: No Supplier Device Package: D1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 210 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
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| APTGT30DA170T1G | Microsemi Corporation |
Description: IGBT MODULE 1700V 45A 210W SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A NTC Thermistor: Yes Supplier Device Package: SP1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 210 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
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| APTGT30DA170D1G | Microsemi Corporation |
Description: IGBT MODULE 1700V 45A 210W D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A NTC Thermistor: No Supplier Device Package: D1 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 210 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
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| APTGT30SK170D1G | Microsemi Corporation |
Description: IGBT MODULE 1700V 45A 210W D1 Packaging: Bulk Package / Case: D1 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A NTC Thermistor: No Supplier Device Package: D1 IGBT Type: Trench Field Stop Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 210 W Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V |
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| UFT7260SM1A | Microsemi Corporation | Description: DIODE MODULE 600V 35A SM1 |
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| APTGF180DU60TG | Microsemi Corporation |
Description: IGBT MODULE 600V 220A 833W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 833 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V |
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APTGF180DH60G | Microsemi Corporation |
Description: IGBT MODULE 600V 220A 833W SP6 Packaging: Bulk Package / Case: SP6 Mounting Type: Chassis Mount Input: Standard Configuration: Asymmetrical Bridge Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A NTC Thermistor: No Supplier Device Package: SP6 IGBT Type: NPT Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 833 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V |
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| APTGT100A60TG | Microsemi Corporation |
Description: IGBT MODULE 600V 150A 340W SP4 |
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| APTGT75DH120TG | Microsemi Corporation |
Description: IGBT MODULE 1200V 110A 357W SP4 |
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APTGF150DA120TG | Microsemi Corporation |
Description: IGBT MODULE 1200V 200A 961W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 961 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V |
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| APTGF180DA60TG | Microsemi Corporation |
Description: IGBT MODULE 600V 220A 833W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Single Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 220 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 833 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V |
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| APTGF50DH120TG | Microsemi Corporation |
Description: IGBT MODULE 1200V 75A 312W SP4 |
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APTGF90DU60TG | Microsemi Corporation |
Description: IGBT MODULE 600V 110A 416W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 110 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 416 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V |
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| APTGT100DA120TG | Microsemi Corporation |
Description: IGBT MODULE 1200V 140A 480W SP4 |
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APTGF150DU120TG | Microsemi Corporation |
Description: IGBT MODULE 1200V 200A 961W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Dual, Common Source Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: NPT Part Status: Obsolete Current - Collector (Ic) (Max): 200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 961 W Current - Collector Cutoff (Max): 350 µA Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V |
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| APTGF50DA120TG | Microsemi Corporation |
Description: IGBT MODULE 1200V 75A 312W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: NPT Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
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| APTGF90DH60TG | Microsemi Corporation |
Description: IGBT MODULE 600V 110A 416W SP4 |
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| APTGT50DA170TG | Microsemi Corporation |
Description: IGBT MODULE 1700V 75A 312W SP4 |
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| APTGT100SK60TG | Microsemi Corporation |
Description: IGBT MODULE 600V 150A 340W SP4 |
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| APTGF50SK120TG | Microsemi Corporation |
Description: IGBT MODULE 1200V 75A 312W SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A NTC Thermistor: Yes Supplier Device Package: SP4 IGBT Type: NPT Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 312 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V |
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MXP5KE16CA | Microsemi Corporation |
Description: TVS DIODE 16VWM 26VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 19.2A Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 17.8V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete |
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MP5KE16CAe3 | Microsemi Corporation |
Description: TVS DIODE 16VWM 26VC DO204AL Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 19.2A Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: DO-204AL (DO-41) Bidirectional Channels: 1 Voltage - Breakdown (Min): 17.8V Voltage - Clamping (Max) @ Ipp: 26V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Obsolete Grade: Military Qualification: MIL-PRF-19500 |
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1N5376/TR12 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
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1N5376Ae3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
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1N5376B/TR12 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
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1N5376Be3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
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1N5376Be3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
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1N5376C/TR12 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
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1N5376e3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
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1N5376e3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
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1N5376Be3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
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1N5376C/TR8 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
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1N5376Ce3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
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1N5376e3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
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1N5376Ae3/TR12 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
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1N5376Ce3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Tolerance: ±2% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
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1N5376/TR8 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Tolerance: ±20% Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
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1N5376A/TR8 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
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1N5376Ae3/TR8 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±10% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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1N5376B/TR8 | Microsemi Corporation |
Description: DIODE ZENER 87V 5W T18 Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 87 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: T-18 Part Status: Obsolete Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 63 V |
Produkt ist nicht verfügbar |
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LX1973AIDU | Microsemi Corporation |
Description: SENSOR OPT 580NM AMBIENT 8MSOP Packaging: Tube Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Wavelength: 580nm Output Type: Voltage Mounting Type: Surface Mount Type: Ambient Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 8-MSOP Proximity Detection: No |
Produkt ist nicht verfügbar |
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SMBJ5335A/TR13 | Microsemi Corporation |
Description: DIODE ZENER 3.9V 5W SMBJ |
Produkt ist nicht verfügbar |
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SMBJ5335B/TR13 | Microsemi Corporation |
Description: DIODE ZENER 3.9V 5W SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SMBJ5335CE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 3.9V 5W SMBJ |
Produkt ist nicht verfügbar |
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SMBJ5335AE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 3.9V 5W SMBJ |
Produkt ist nicht verfügbar |
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SMBJ5335C/TR13 | Microsemi Corporation |
Description: DIODE ZENER 3.9V 5W SMBJ |
Produkt ist nicht verfügbar |
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SMBJ5335BE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 3.9V 5W SMBJ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BR246-20B3-6B-008M | Microsemi Corporation |
Description: RELAY GEN PURPOSE DPDT 10A 6V Packaging: Bulk Mounting Type: Chassis Mount Coil Voltage: 6VDC Operating Temperature: -70°C ~ 125°C Termination Style: Solder Hook Relay Type: General Purpose Coil Current: 300 mA Coil Type: Non Latching Contact Form: DPDT (2 Form C) Contact Rating (Current): 10 A Switching Voltage: 208VAC, 28VDC - Max Must Release Voltage: 1.8 VDC Must Operate Voltage: 4.5 VDC Operate Time: 15 ms Release Time: 15 ms Part Status: Active |
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Im Einkaufswagen Stück im Wert von UAH | |
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APT8024LVRG | Microsemi Corporation | Description: MOSFET N-CH 800V 33A TO264 |
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P6KE13CAE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 11.1VWM 18.2VC AXIAL Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33A Voltage - Reverse Standoff (Typ): 11.1V Supplier Device Package: Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 12.4V Voltage - Clamping (Max) @ Ipp: 18.2V Power - Peak Pulse: 600W Power Line Protection: No |
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APT30M70SVRG | Microsemi Corporation |
Description: MOSFET N-CH 300V 48A D3PAK Packaging: Tube Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V Power Dissipation (Max): 370W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D3 [S] Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V |
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APT30M85BVFRG | Microsemi Corporation |
Description: MOSFET N-CH 300V 40A TO247 |
Produkt ist nicht verfügbar |
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APT30M85SVFRG | Microsemi Corporation | Description: MOSFET N-CH 300V 40A D3PAK |
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| MAP5KE54A |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MAP5KE7.5Ae3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 7.5VWM 12.9VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38.8A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 7.5VWM 12.9VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38.8A
Voltage - Reverse Standoff (Typ): 7.5V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 8.33V
Voltage - Clamping (Max) @ Ipp: 12.9V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MP5KE85A |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 85VWM 137VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Description: TVS DIODE 85VWM 137VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.6A
Voltage - Reverse Standoff (Typ): 85V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 94.4V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Obsolete
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXLP5KE6.5CAe3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 6.5VWM 11.2VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 44.7A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 6.5VWM 11.2VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 44.7A
Voltage - Reverse Standoff (Typ): 6.5V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7.22V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGF50VDA120T3G |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 70A 312W SP3
Description: IGBT MODULE 1200V 70A 312W SP3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MP5KE54A |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 54VWM 87.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 54VWM 87.1VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.7A
Voltage - Reverse Standoff (Typ): 54V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 60V
Voltage - Clamping (Max) @ Ipp: 87.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGT30SK170T1G |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1700V 45A 210W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Description: IGBT MODULE 1700V 45A 210W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGT30A170D1G |
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1700V 45A 210W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Description: IGBT MODULE 1700V 45A 210W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGT30DA170T1G |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1700V 45A 210W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Description: IGBT MODULE 1700V 45A 210W SP1
Packaging: Bulk
Package / Case: SP1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: SP1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGT30DA170D1G |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1700V 45A 210W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Description: IGBT MODULE 1700V 45A 210W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGT30SK170D1G |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1700V 45A 210W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Description: IGBT MODULE 1700V 45A 210W D1
Packaging: Bulk
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: D1
IGBT Type: Trench Field Stop
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UFT7260SM1A |
Hersteller: Microsemi Corporation
Description: DIODE MODULE 600V 35A SM1
Description: DIODE MODULE 600V 35A SM1
Produkt ist nicht verfügbar
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| APTGF180DU60TG |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 220A 833W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
Description: IGBT MODULE 600V 220A 833W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGF180DH60G |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 220A 833W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
Description: IGBT MODULE 600V 220A 833W SP6
Packaging: Bulk
Package / Case: SP6
Mounting Type: Chassis Mount
Input: Standard
Configuration: Asymmetrical Bridge
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: No
Supplier Device Package: SP6
IGBT Type: NPT
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGT100A60TG |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 150A 340W SP4
Description: IGBT MODULE 600V 150A 340W SP4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGT75DH120TG |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 110A 357W SP4
Description: IGBT MODULE 1200V 110A 357W SP4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGF150DA120TG |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 200A 961W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
Description: IGBT MODULE 1200V 200A 961W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGF180DA60TG |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 220A 833W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
Description: IGBT MODULE 600V 220A 833W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 180A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 833 W
Current - Collector Cutoff (Max): 300 µA
Input Capacitance (Cies) @ Vce: 8.6 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGF50DH120TG |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP4
Description: IGBT MODULE 1200V 75A 312W SP4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGF90DU60TG |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 110A 416W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Description: IGBT MODULE 600V 110A 416W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 90A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 416 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGT100DA120TG |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 140A 480W SP4
Description: IGBT MODULE 1200V 140A 480W SP4
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTGF150DU120TG |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 200A 961W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
Description: IGBT MODULE 1200V 200A 961W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Dual, Common Source
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 961 W
Current - Collector Cutoff (Max): 350 µA
Input Capacitance (Cies) @ Vce: 10.2 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGF50DA120TG |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Description: IGBT MODULE 1200V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| APTGF90DH60TG |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 110A 416W SP4
Description: IGBT MODULE 600V 110A 416W SP4
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTGT50DA170TG |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1700V 75A 312W SP4
Description: IGBT MODULE 1700V 75A 312W SP4
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTGT100SK60TG |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 150A 340W SP4
Description: IGBT MODULE 600V 150A 340W SP4
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| APTGF50SK120TG |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Description: IGBT MODULE 1200V 75A 312W SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: SP4
IGBT Type: NPT
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 312 W
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 3.45 nF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MXP5KE16CA |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 16VWM 26VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.2A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 16VWM 26VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.2A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MP5KE16CAe3 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 16VWM 26VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.2A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 16VWM 26VC DO204AL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.2A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Obsolete
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5376/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5376Ae3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5376B/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5376Be3/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5376Be3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5376C/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5376e3/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5376e3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±20%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5376Be3/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5376C/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5376Ce3/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5376e3/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Produkt ist nicht verfügbar
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| 1N5376Ae3/TR12 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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| 1N5376Ce3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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| 1N5376/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Tolerance: ±20%
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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| 1N5376A/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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Stück im Wert von UAH
| 1N5376Ae3/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 1N5376B/TR8 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
Description: DIODE ZENER 87V 5W T18
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 87 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: T-18
Part Status: Obsolete
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 63 V
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| LX1973AIDU |
|
Hersteller: Microsemi Corporation
Description: SENSOR OPT 580NM AMBIENT 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Wavelength: 580nm
Output Type: Voltage
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 8-MSOP
Proximity Detection: No
Description: SENSOR OPT 580NM AMBIENT 8MSOP
Packaging: Tube
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Wavelength: 580nm
Output Type: Voltage
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 8-MSOP
Proximity Detection: No
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| SMBJ5335A/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.9V 5W SMBJ
Description: DIODE ZENER 3.9V 5W SMBJ
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| SMBJ5335B/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.9V 5W SMBJ
Description: DIODE ZENER 3.9V 5W SMBJ
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| SMBJ5335CE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.9V 5W SMBJ
Description: DIODE ZENER 3.9V 5W SMBJ
Produkt ist nicht verfügbar
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| SMBJ5335AE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.9V 5W SMBJ
Description: DIODE ZENER 3.9V 5W SMBJ
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| SMBJ5335C/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.9V 5W SMBJ
Description: DIODE ZENER 3.9V 5W SMBJ
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Stück im Wert von UAH
| SMBJ5335BE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 3.9V 5W SMBJ
Description: DIODE ZENER 3.9V 5W SMBJ
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Stück im Wert von UAH
| BR246-20B3-6B-008M |
|
Hersteller: Microsemi Corporation
Description: RELAY GEN PURPOSE DPDT 10A 6V
Packaging: Bulk
Mounting Type: Chassis Mount
Coil Voltage: 6VDC
Operating Temperature: -70°C ~ 125°C
Termination Style: Solder Hook
Relay Type: General Purpose
Coil Current: 300 mA
Coil Type: Non Latching
Contact Form: DPDT (2 Form C)
Contact Rating (Current): 10 A
Switching Voltage: 208VAC, 28VDC - Max
Must Release Voltage: 1.8 VDC
Must Operate Voltage: 4.5 VDC
Operate Time: 15 ms
Release Time: 15 ms
Part Status: Active
Description: RELAY GEN PURPOSE DPDT 10A 6V
Packaging: Bulk
Mounting Type: Chassis Mount
Coil Voltage: 6VDC
Operating Temperature: -70°C ~ 125°C
Termination Style: Solder Hook
Relay Type: General Purpose
Coil Current: 300 mA
Coil Type: Non Latching
Contact Form: DPDT (2 Form C)
Contact Rating (Current): 10 A
Switching Voltage: 208VAC, 28VDC - Max
Must Release Voltage: 1.8 VDC
Must Operate Voltage: 4.5 VDC
Operate Time: 15 ms
Release Time: 15 ms
Part Status: Active
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| APT8024LVRG |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 800V 33A TO264
Description: MOSFET N-CH 800V 33A TO264
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| P6KE13CAE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 11.1VWM 18.2VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 11.1VWM 18.2VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 11.1V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 12.4V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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| APT30M70SVRG |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 300V 48A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D3 [S]
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
Description: MOSFET N-CH 300V 48A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 370W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D3 [S]
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5870 pF @ 25 V
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| APT30M85BVFRG |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 300V 40A TO247
Description: MOSFET N-CH 300V 40A TO247
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| APT30M85SVFRG |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 300V 40A D3PAK
Description: MOSFET N-CH 300V 40A D3PAK
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