Die Produkte microsemi corporation
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| Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | verfügbar/auf Bestellung | Preis ohne MwSt |
||
|---|---|---|---|---|---|---|---|---|
| APTM10DSKM09T3G |
|
Microsemi Corporation |
Description: MOSFET 2N-CH 100V 139A SP3 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 390W Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Current - Continuous Drain (Id) @ 25°C: 139A Drain to Source Voltage (Vdss): 100V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Bulk Supplier Device Package: SP3 Package / Case: SP3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTC60DSKM35T3G | Microsemi Corporation |
Description: MOSFET 2N-CH 600V 72A SP3 Supplier Device Package: SP3 Package / Case: SP3 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 416W Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V Vgs(th) (Max) @ Id: 3.9V @ 5.4mA Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V Current - Continuous Drain (Id) @ 25°C: 72A Drain to Source Voltage (Vdss): 600V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
| APTM100DDA35T3G |
|
Microsemi Corporation |
Description: MOSFET 2N-CH 1000V 22A SP3 Supplier Device Package: SP3 Package / Case: SP3 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 390W Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 22A Drain to Source Voltage (Vdss): 1000V (1kV) FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM100DSK35T3G |
|
Microsemi Corporation |
Description: MOSFET 2N-CH 1000V 22A SP3 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 390W Supplier Device Package: SP3 Package / Case: SP3 Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 22A Drain to Source Voltage (Vdss): 1000V (1kV) FET Feature: Standard FET Type: 2 N-Channel (Dual) Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM50DDAM65T3G |
|
Microsemi Corporation |
Description: MOSFET 2N-CH 500V 51A SP3 Current - Continuous Drain (Id) @ 25°C: 51A Drain to Source Voltage (Vdss): 500V FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Bulk Supplier Device Package: SP3 Package / Case: SP3 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 390W Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM120DDA57T3G |
|
Microsemi Corporation |
Description: MOSFET 2N-CH 1200V 17A SP3 Manufacturer: Microsemi Corporation Packaging: Bulk Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 17A Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM120DSK57T3G |
|
Microsemi Corporation |
Description: MOSFET 2N-CH 1200V 17A SP3 Supplier Device Package: SP3 Package / Case: SP3 Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A Drain to Source Voltage (Vdss): 1200V (1.2kV) FET Feature: Standard FET Type: 2 N-Channel (Dual) Packaging: Bulk Part Status: Obsolete Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 390W Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM60A11FT1G |
|
Microsemi Corporation |
Description: MOSFET 2N-CH 600V 40A SP1 Packaging: Bulk Part Status: Active FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 40A Rds On (Max) @ Id, Vgs: 132mOhm @ 33A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10552pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTC60DDAM70CT1G | Microsemi Corporation |
Description: MOSFET 2N-CH 600V 39A SP1 Packaging: Bulk Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
| APTC60DSKM70CT1G | Microsemi Corporation |
Description: MOSFET 2N-CH 600V 39A SP1 Packaging: Bulk Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Super Junction Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25°C: 39A Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V Vgs(th) (Max) @ Id: 3.9V @ 2.7mA Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 250W Mounting Type: Chassis Mount Package / Case: SP1 Supplier Device Package: SP1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
| APTM100DA18CT1G | Microsemi Corporation |
Description: MOSFET N-CH 1000V 40A SP1 Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Rds On (Max) @ Id, Vgs: 216mOhm @ 33A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Drain to Source Voltage (Vdss): 1000V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Power Dissipation (Max): 657W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||
| APTM10DAM05TG |
|
Microsemi Corporation |
Description: MOSFET N-CH 100V 278A SP4 FET Type: N-Channel Part Status: Active Packaging: Bulk Package / Case: SP4 Supplier Device Package: SP4 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power Dissipation (Max): 780W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V Vgs(th) (Max) @ Id: 4V @ 5mA Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 278A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM120A65FT1G |
|
Microsemi Corporation |
Description: MOSFET 2N-CH 1200V 16A SP1 Supplier Device Package: SP1 Package / Case: SP1 FET Feature: Standard FET Type: 2 N-Channel (Half Bridge) Part Status: Obsolete Packaging: Bulk Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 390W Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V Rds On (Max) @ Id, Vgs: 780mOhm @ 14A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Current - Continuous Drain (Id) @ 25°C: 16A Drain to Source Voltage (Vdss): 1200V (1.2kV) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM100DA18TG |
|
Microsemi Corporation |
Description: MOSFET N-CH 1000V 43A SP4 Vgs(th) (Max) @ Id: 5V @ 5mA Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Package / Case: SP4 Supplier Device Package: SP4 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power Dissipation (Max): 780W (Tc) Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Drain to Source Voltage (Vdss): 1000V Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM100A40FT1G |
|
Microsemi Corporation |
Description: MOSFET 2N-CH 1000V 21A SP1 Supplier Device Package: SP1 Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 390W Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Rds On (Max) @ Id, Vgs: 480mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 21A Drain to Source Voltage (Vdss): 1000V (1kV) FET Feature: Standard FET Type: 2 N-Channel (Half Bridge) Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTC90DAM60CT1G |
|
Microsemi Corporation |
Description: MOSFET N-CH 900V 59A SP1 Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 3.5V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V FET Feature: Super Junction Power Dissipation (Max): 462W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP1 Package / Case: SP1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM100H45FT3G |
|
Microsemi Corporation |
Description: MOSFET 4N-CH 1000V 18A SP3 Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 357W Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V Supplier Device Package: SP3 Vgs(th) (Max) @ Id: 5V @ 2.5mA Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V Current - Continuous Drain (Id) @ 25°C: 18A Drain to Source Voltage (Vdss): 1000V (1kV) FET Feature: Standard FET Type: 4 N-Channel (H-Bridge) Part Status: Active Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM10AM05FTG |
|
Microsemi Corporation |
Description: MOSFET 2N-CH 100V 278A SP4 FET Type: 2 N-Channel (Half Bridge) Part Status: Active Packaging: Bulk Supplier Device Package: SP4 Package / Case: SP4 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 780W Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V Vgs(th) (Max) @ Id: 4V @ 5mA Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V Current - Continuous Drain (Id) @ 25°C: 278A Drain to Source Voltage (Vdss): 100V FET Feature: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
 |
APTM10TAM19FPG |
|
Microsemi Corporation |
Description: MOSFET 6N-CH 100V 70A SP6-P Supplier Device Package: SP6-P Package / Case: SP6 Mounting Type: Chassis Mount Vgs(th) (Max) @ Id: 4V @ 1mA Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 208W Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 70A Drain to Source Voltage (Vdss): 100V FET Feature: Standard FET Type: 6 N-Channel (3-Phase Bridge) Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| APTM100H35FT3G |
|
Microsemi Corporation |
Description: MOSFET 4N-CH 1000V 22A SP3 Supplier Device Package: SP3 Package / Case: SP3 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 390W Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 22A Drain to Source Voltage (Vdss): 1000V (1kV) FET Feature: Standard FET Type: 4 N-Channel (H-Bridge) Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM20HM16FTG |
|
Microsemi Corporation |
Description: MOSFET 4N-CH 200V 104A SP4 Packaging: Bulk Package / Case: SP4 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 390W FET Type: 4 N-Channel (H-Bridge) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 104A Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP4 Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM100H35FTG |
|
Microsemi Corporation |
Description: MOSFET 4N-CH 1000V 22A SP4 Supplier Device Package: SP4 Package / Case: SP4 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Vgs(th) (Max) @ Id: 5V @ 2.5mA Power - Max: 390W Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 22A Drain to Source Voltage (Vdss): 1000V (1kV) FET Feature: Standard FET Type: 4 N-Channel (H-Bridge) Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM20SKM05G |
|
Microsemi Corporation |
Description: MOSFET N-CH 200V 317A SP6 Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 317A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Manufacturer: Microsemi Corporation Vgs (Max): ±30V Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V Power Dissipation (Max): 1136W (Tc) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SP6 Package / Case: SP6 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTML1002U60R020T3AG |
|
Microsemi Corporation |
Description: MOSFET 2N-CH 1000V 20A SP3 Packaging: Bulk Part Status: Obsolete FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV) Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 720mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V Power - Max: 520W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM10DAM02G |
|
Microsemi Corporation |
Description: MOSFET N-CH 100V 495A SP6 Package / Case: SP6 Supplier Device Package: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power Dissipation (Max): 1250W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V Vgs(th) (Max) @ Id: 4V @ 10mA Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 495A (Tc) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V FET Type: N-Channel Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM10DHM05G |
|
Microsemi Corporation |
Description: MOSFET 2N-CH 100V 278A SP6 Supplier Device Package: SP6 Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 780W Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V Vgs(th) (Max) @ Id: 4V @ 5mA Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V Current - Continuous Drain (Id) @ 25°C: 278A Drain to Source Voltage (Vdss): 100V FET Feature: Standard FET Type: 2 N-Channel (Dual) Asymmetrical Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM10UM02FAG |
|
Microsemi Corporation |
Description: MOSFET N-CH 100V 570A SP6 Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V Vgs(th) (Max) @ Id: 4V @ 10mA Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 570A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Bulk Package / Case: SP6 Supplier Device Package: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power Dissipation (Max): 1660W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| APTM100SKM90G |
|
Microsemi Corporation |
Description: MOSFET N-CH 1000V 78A SP6 Package / Case: SP6 Supplier Device Package: SP6 Operating Temperature: -40°C ~ 150°C (TJ) Power Dissipation (Max): 1250W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V Vgs(th) (Max) @ Id: 5V @ 10mA Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V Mounting Type: Chassis Mount Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drain to Source Voltage (Vdss): 1000V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Bulk Manufacturer: Microsemi Corporation |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
|
|
APTM10TAM09FPG |
|
Microsemi Corporation |
Description: MOSFET 6N-CH 100V 139A SP6-P FET Type: 6 N-Channel (3-Phase Bridge) Part Status: Active Packaging: Bulk Supplier Device Package: SP6-P Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 390W Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V Current - Continuous Drain (Id) @ 25°C: 139A Drain to Source Voltage (Vdss): 100V FET Feature: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| APTM10DUM02G |
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Microsemi Corporation |
Description: MOSFET 2N-CH 100V 495A SP6 Supplier Device Package: SP6 Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 1250W Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V Vgs(th) (Max) @ Id: 4V @ 10mA Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V Current - Continuous Drain (Id) @ 25°C: 495A Drain to Source Voltage (Vdss): 100V FET Feature: Standard FET Type: 2 N-Channel (Dual) Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
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APTM20TAM16FPG |
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Microsemi Corporation |
Description: MOSFET 6N-CH 200V 104A SP6-P Packaging: Bulk Part Status: Active FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 104A Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APTM10UM01FAG |
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Microsemi Corporation |
Description: MOSFET N-CH 100V 860A SP6 Input Capacitance (Ciss) (Max) @ Vds: 60000pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 2100nC @ 10V Vgs(th) (Max) @ Id: 4V @ 12mA Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 860A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Bulk Package / Case: SP6 Supplier Device Package: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power Dissipation (Max): 2500W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APTM50TAM65FPG |
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Microsemi Corporation |
Description: MOSFET 6N-CH 500V 51A SP6-P Part Status: Active Packaging: Bulk FET Type: 6 N-Channel (3-Phase Bridge) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 51A Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V Power - Max: 390W Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6-P |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APTM120TDU57PG |
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Microsemi Corporation |
Description: MOSFET 6N-CH 1200V 17A SP6-P Supplier Device Package: SP6-P Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 390W Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A Drain to Source Voltage (Vdss): 1200V (1.2kV) FET Feature: Standard FET Type: 6 N-Channel (3-Phase Bridge) Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| APTM100A13DG |
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Microsemi Corporation |
Description: MOSFET 2N-CH 1000V 65A SP6 Supplier Device Package: SP6 Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 1250W Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V FET Type: 2 N-Channel (Half Bridge) Part Status: Active Packaging: Bulk Vgs(th) (Max) @ Id: 5V @ 6mA Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V Current - Continuous Drain (Id) @ 25°C: 65A Drain to Source Voltage (Vdss): 1000V (1kV) FET Feature: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
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APTM100TA35FPG |
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Microsemi Corporation |
Description: MOSFET 6N-CH 1000V 22A SP6-P Part Status: Active Packaging: Bulk Supplier Device Package: SP6-P Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 390W Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 22A Drain to Source Voltage (Vdss): 1000V (1kV) FET Feature: Standard FET Type: 6 N-Channel (3-Phase Bridge) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APTM100A13SG |
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Microsemi Corporation |
Description: MOSFET 2N-CH 1000V 65A SP6 Supplier Device Package: SP6 Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Power - Max: 1250W Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V Vgs(th) (Max) @ Id: 5V @ 6mA Current - Continuous Drain (Id) @ 25°C: 65A Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V Drain to Source Voltage (Vdss): 1000V (1kV) FET Feature: Standard FET Type: 2 N-Channel (Half Bridge) Part Status: Active Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APT100GT60JR |
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Microsemi Corporation |
Description: IGBT MOD 600V 148A 500W ISOTOP Part Status: Active IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 148A Power - Max: 500W Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Current - Collector Cutoff (Max): 25µA Input Capacitance (Cies) @ Vce: 5.15nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ISOTOP Supplier Device Package: ISOTOP® |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 104 Stücke - Preis und Lieferfrist anzeigen
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APT30GP60JDQ1 |
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Microsemi Corporation |
Description: IGBT MODULE 600V 67A 245W ISOTOP Packaging: Tube Part Status: Not For New Designs IGBT Type: PT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 67A Power - Max: 245W Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Current - Collector Cutoff (Max): 500µA Input Capacitance (Cies) @ Vce: 3.2nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: ISOTOP® |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APT100GN120J |
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Microsemi Corporation |
Description: IGBT MOD 1200V 153A 446W ISOTOP Part Status: Active IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 153A Power - Max: 446W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 6.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: ISOTOP® |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APT60GF60JU2 |
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Microsemi Corporation |
Description: IGBT 600V 93A 378W SOT227 Supplier Device Package: SOT-227 Package / Case: ISOTOP Mounting Type: Chassis Mount NTC Thermistor: No Input: Standard Input Capacitance (Cies) @ Vce: 3.59nF @ 25V Current - Collector Cutoff (Max): 80µA Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Power - Max: 378W Current - Collector (Ic) (Max): 93A Voltage - Collector Emitter Breakdown (Max): 600V Configuration: Single IGBT Type: NPT Part Status: Obsolete |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APT60GF60JU3 |
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Microsemi Corporation |
Description: IGBT 600V 93A 378W SOT227 IGBT Type: NPT Part Status: Obsolete Package / Case: ISOTOP Mounting Type: Chassis Mount NTC Thermistor: No Input: Standard Input Capacitance (Cies) @ Vce: 3.59nF @ 25V Current - Collector Cutoff (Max): 80µA Supplier Device Package: SOT-227 Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A Power - Max: 378W Current - Collector (Ic) (Max): 93A Voltage - Collector Emitter Breakdown (Max): 600V Configuration: Single |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APT75GT120JRDQ3 |
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Microsemi Corporation |
Description: IGBT MOD 1200V 97A 480W ISOTOP Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V Current - Collector Cutoff (Max): 200 µA Power - Max: 480 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 97 A Part Status: Active IGBT Type: NPT Supplier Device Package: ISOTOP® NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A Operating Temperature: -55°C ~ 150°C (TJ) Configuration: Single Input: Standard Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APTGT75DA60T1G |
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Microsemi Corporation |
Description: IGBT MODULE 600V 100A 250W SP1 Supplier Device Package: SP1 Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Input: Standard Configuration: Single IGBT Type: Trench Field Stop Part Status: Active Input Capacitance (Cies) @ Vce: 4.62nF @ 25V Current - Collector Cutoff (Max): 250µA Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Power - Max: 250W Current - Collector (Ic) (Max): 100A Voltage - Collector Emitter Breakdown (Max): 600V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APT100GT60JRDQ4 |
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Microsemi Corporation |
Description: IGBT MOD 600V 148A 500W ISOTOP Part Status: Active IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 148A Power - Max: 500W Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A Current - Collector Cutoff (Max): 50µA Input Capacitance (Cies) @ Vce: 5.15nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ISOTOP Supplier Device Package: ISOTOP® |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APT100GN120JDQ4 | Microsemi Corporation |
Description: IGBT MOD 1200V 153A 446W ISOTOP Part Status: Active IGBT Type: Trench Field Stop Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 153A Power - Max: 446W Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Current - Collector Cutoff (Max): 200µA Input Capacitance (Cies) @ Vce: 6.5nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: ISOTOP® |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
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APTGT75A60T1G |
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Microsemi Corporation |
Description: IGBT PHASE LEG TRENCH 600V SP1 Supplier Device Package: SP1 Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Input: Standard Input Capacitance (Cies) @ Vce: 4.62nF @ 25V Current - Collector Cutoff (Max): 250µA Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Power - Max: 250W Current - Collector (Ic) (Max): 100A Voltage - Collector Emitter Breakdown (Max): 600V Configuration: Half Bridge IGBT Type: Trench Field Stop Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APT100GT120JU3 |
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Microsemi Corporation |
Description: IGBT MOD 1200V 140A 480W SOT227 Operating Temperature: -55°C ~ 150°C (TJ) NTC Thermistor: No Input: Standard Input Capacitance (Cies) @ Vce: 7.2nF @ 25V Current - Collector Cutoff (Max): 5mA Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A Power - Max: 480W Current - Collector (Ic) (Max): 140A Voltage - Collector Emitter Breakdown (Max): 1200V Configuration: Single IGBT Type: Trench Field Stop Part Status: Active Supplier Device Package: SOT-227 Package / Case: ISOTOP Mounting Type: Chassis Mount |
auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e) |
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APT15GF120JCU2 | Microsemi Corporation |
Description: IGBT MOD 1200V 30A 156W SOT227 Packaging: Bulk Part Status: Obsolete IGBT Type: NPT Configuration: Single Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Power - Max: 156W Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 1nF @ 25V Input: Standard NTC Thermistor: No Mounting Type: Chassis, Stud Mount Package / Case: SOT-227-4, miniBLOC Supplier Device Package: SOT-227 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
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APTGT50H60T3G |
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Microsemi Corporation |
Description: POWER MOD IGBT3 FULL BRIDGE SP3 Current - Collector Cutoff (Max): 250µA Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Power - Max: 176W Current - Collector (Ic) (Max): 80A Voltage - Collector Emitter Breakdown (Max): 600V Configuration: Full Bridge Inverter IGBT Type: Trench Field Stop Part Status: Active Supplier Device Package: SP3 Package / Case: SP3 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Input: Standard Input Capacitance (Cies) @ Vce: 3.15nF @ 25V |
auf Bestellung 16 Stücke Lieferzeit 21-28 Tag (e) |
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APTGT75A120T1G |
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Microsemi Corporation |
Description: POWER MOD IGBT TRENCH PH LEG SP1 Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: 357W Current - Collector (Ic) (Max): 110A Voltage - Collector Emitter Breakdown (Max): 1200V Configuration: Half Bridge IGBT Type: Trench Field Stop Part Status: Active Supplier Device Package: SP1 Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) NTC Thermistor: Yes Input: Standard Input Capacitance (Cies) @ Vce: 5.34nF @ 25V Current - Collector Cutoff (Max): 250µA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APTGT50H60RT3G |
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Microsemi Corporation |
Description: POWER MOD IGBT3 FULL BRIDGE SP3 Power - Max: 176W Current - Collector (Ic) (Max): 80A Voltage - Collector Emitter Breakdown (Max): 600V Configuration: Full Bridge Inverter IGBT Type: Trench Field Stop Part Status: Active Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 3.15nF @ 25V Input: Single Phase Bridge Rectifier NTC Thermistor: Yes Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APTGT75H60T2G |
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Microsemi Corporation |
Description: POWER MOD IGBT3 FULL BRIDGE SP2 Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: Yes Input: Standard Input Capacitance (Cies) @ Vce: 4.62nF @ 25V Current - Collector Cutoff (Max): 250µA Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Power - Max: 250W Current - Collector (Ic) (Max): 100A Voltage - Collector Emitter Breakdown (Max): 600V Configuration: Full Bridge Inverter IGBT Type: Trench Field Stop Part Status: Active Supplier Device Package: SP2 Package / Case: SP2 Mounting Type: Chassis Mount |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APTGFQ25H120T2G |
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Microsemi Corporation |
Description: IGBT 1200V 40A 227W MODULE NTC Thermistor: Yes Input: Standard Input Capacitance (Cies) @ Vce: 2.02nF @ 25V Current - Collector Cutoff (Max): 250µA Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Power - Max: 227W Current - Collector (Ic) (Max): 40A Voltage - Collector Emitter Breakdown (Max): 1200V Configuration: Full Bridge IGBT Type: NPT and Fieldstop Part Status: Not For New Designs Supplier Device Package: SP2 Package / Case: SP2 Mounting Type: Through Hole |
auf Bestellung 14 Stücke Lieferzeit 21-28 Tag (e) |
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APTGT75SK120TG |
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Microsemi Corporation |
Description: IGBT 1200V 110A 357W SP4 Input Capacitance (Cies) @ Vce: 5.34nF @ 25V Current - Collector Cutoff (Max): 250µA Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: 357W Current - Collector (Ic) (Max): 110A Voltage - Collector Emitter Breakdown (Max): 1200V Configuration: Single IGBT Type: Trench Field Stop Part Status: Active Supplier Device Package: SP4 Package / Case: SP4 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) NTC Thermistor: Yes Input: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APTGT200A602G |
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Microsemi Corporation |
Description: POWER MOD IGBT3 PHASE LEG SP2 Part Status: Active IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 290A Power - Max: 625W Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A Current - Collector Cutoff (Max): 50µA Input Capacitance (Cies) @ Vce: 12.3nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP2 Supplier Device Package: SP2 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APTGF100A1202G |
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Microsemi Corporation |
Description: POWER MOD IGBT NPT PHASE LEG SP2 Part Status: Obsolete IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 135A Power - Max: 568W Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 6.5nF @ 25V Input: Standard NTC Thermistor: No Mounting Type: Chassis Mount Package / Case: SP2 Supplier Device Package: SP2 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APTGF100A120T3AG |
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Microsemi Corporation |
Description: MOD IGBT NPT 1200V 130A SP3 Part Status: Obsolete IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 130A Power - Max: 780W Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A Current - Collector Cutoff (Max): 250µA Input Capacitance (Cies) @ Vce: 6.5nF @ 25V Input: Standard NTC Thermistor: Yes Mounting Type: Chassis Mount Package / Case: SP3 Supplier Device Package: SP3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APTGF165A60D1G |
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Microsemi Corporation |
Description: IGBT MODULE 600V 230A 781W D1 Supplier Device Package: D1 Package / Case: D1 Mounting Type: Chassis Mount Input: Standard NTC Thermistor: No Input Capacitance (Cies) @ Vce: 9nF @ 25V Current - Collector Cutoff (Max): 250µA Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A Power - Max: 781W Current - Collector (Ic) (Max): 230A Voltage - Collector Emitter Breakdown (Max): 600V Configuration: Half Bridge IGBT Type: NPT Part Status: Obsolete Packaging: Bulk |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 150 Stücke - Preis und Lieferfrist anzeigen
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APTGF100A120TG |
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Microsemi Corporation |
Description: POWER MOD IGBT NPT PHASE LEG SP4 Part Status: Obsolete IGBT Type: NPT Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 135A Power - Max: 568W Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A Current - Collector Cutoff (Max): 350µA Input Capacitance (Cies) @ Vce: 6.9nF @ 25V Input: Standard NTC Thermistor: Yes Mounting Type: Chassis Mount Package / Case: SP4 Supplier Device Package: SP4 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APTGL180A1202G |
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Microsemi Corporation |
Description: IGBT MODULE 1200V 220A 750W SP2 Supplier Device Package: SP2 Package / Case: SP2 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: No Part Status: Active Input: Standard Packaging: Bulk Manufacturer: Microsemi Corporation Input Capacitance (Cies) @ Vce: 9.3nF @ 25V Current - Collector Cutoff (Max): 300µA Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A Power - Max: 750W Current - Collector (Ic) (Max): 220A Voltage - Collector Emitter Breakdown (Max): 1200V Configuration: Half Bridge IGBT Type: Trench Field Stop Base Part Number: APTGL180 |
auf Bestellung 2 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
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APTGT150SK120G |
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Microsemi Corporation |
Description: IGBT 1200V 220A 690W SP6 Current - Collector (Ic) (Max): 220A Voltage - Collector Emitter Breakdown (Max): 1200V Configuration: Single IGBT Type: Trench Field Stop Part Status: Active Supplier Device Package: SP6 Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) NTC Thermistor: No Input: Standard Input Capacitance (Cies) @ Vce: 10.7nF @ 25V Current - Collector Cutoff (Max): 350µA Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A Power - Max: 690W |
auf Bestellung 1 Stücke Lieferzeit 21-28 Tag (e) |
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APTGF330DA60D3G |
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Microsemi Corporation |
Description: IGBT MODULE 600V 460A 1400W D3 IGBT Type: NPT Part Status: Obsolete Packaging: Bulk Supplier Device Package: D3 Package / Case: D-3 Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) NTC Thermistor: No Input: Standard Input Capacitance (Cies) @ Vce: 18nF @ 25V Current - Collector Cutoff (Max): 750µA Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 400A Power - Max: 1400W Current - Collector (Ic) (Max): 460A Voltage - Collector Emitter Breakdown (Max): 600V Configuration: Single |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APTGLQ200HR120G |
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Microsemi Corporation |
Description: PWR MOD PHASE LEG/DUAL CE SP6 Operating Temperature: -40°C ~ 175°C (TJ) NTC Thermistor: No Input: Standard Input Capacitance (Cies) @ Vce: 9.2nF @ 25V Current - Collector Cutoff (Max): 200µA Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 160A Power - Max: 1000W Current - Collector (Ic) (Max): 300A Voltage - Collector Emitter Breakdown (Max): 1200V IGBT Type: Trench Field Stop Part Status: Active Supplier Device Package: SP6 Package / Case: SP6 Mounting Type: Through Hole |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APTGT75TA120PG |
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Microsemi Corporation |
Description: POWER MOD IGBT 3PHASE LEG SP6 Input Capacitance (Cies) @ Vce: 5.34nF @ 25V Current - Collector Cutoff (Max): 250µA Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Power - Max: 350W Current - Collector (Ic) (Max): 100A Voltage - Collector Emitter Breakdown (Max): 1200V Configuration: Three Phase IGBT Type: Trench Field Stop Part Status: Active Supplier Device Package: SP6-P Package / Case: SP6 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) NTC Thermistor: No Input: Standard |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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APTGLQ200H120G |
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Microsemi Corporation |
Description: PWR MOD IGBT4 1200V 350A SP6 Part Status: Active IGBT Type: Trench Field Stop Configuration: Full Bridge Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 350A Power - Max: 1000W Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 200A Current - Collector Cutoff (Max): 100µA Input Capacitance (Cies) @ Vce: 12.3nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: SP6 Supplier Device Package: SP6 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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JANTX2N4859 |
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Microsemi Corporation |
Description: JFET N-CH 30V 360MW TO-18 Manufacturer: Microsemi Corporation Packaging: Bulk Part Status: Active FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 30V Drain to Source Voltage (Vdss): 30V Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS) Resistance - RDS(On): 25 Ohms Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Base Part Number: 2N4859 |
auf Bestellung 1028 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 18024 Stücke - Preis und Lieferfrist anzeigen
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JANTX2N4857 |
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Microsemi Corporation |
Description: JFET N-CH 40V 360MW TO-18 Manufacturer: Microsemi Corporation Packaging: Bulk Part Status: Obsolete FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): 40V Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS) Resistance - RDS(On): 40 Ohms Power - Max: 360mW Operating Temperature: -65°C ~ 200°C (TJ) Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 17000 Stücke - Preis und Lieferfrist anzeigen
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JANTX2N4091 | Microsemi Corporation |
Description: JFET N-CH 40V 360MW TO-18 Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Power - Max: 360mW Resistance - RDS(On): 30 Ohms Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V Drain to Source Voltage (Vdss): 40V Voltage - Breakdown (V(BR)GSS): 40V FET Type: N-Channel Part Status: Active Manufacturer: Microsemi Corporation Packaging: Bulk Base Part Number: 2N4091 Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Supplier Device Package: TO-18 |
auf Bestellung 105 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 10717 Stücke - Preis und Lieferfrist anzeigen
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JANTX2N4092 | Microsemi Corporation |
Description: JFET N-CH 40V 360MW TO-18 Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V Drain to Source Voltage (Vdss): 40V Voltage - Breakdown (V(BR)GSS): 40V FET Type: N-Channel Part Status: Active Packaging: Bulk Operating Temperature: -65°C ~ 175°C (TJ) Power - Max: 360mW Resistance - RDS(On): 50 Ohms Package / Case: TO-206AA, TO-18-3 Metal Can Supplier Device Package: TO-18 Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Base Part Number: 2N4092 |
auf Bestellung 62 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 20371 Stücke - Preis und Lieferfrist anzeigen
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JANTX2N4092UB | Microsemi Corporation |
Description: JFET N-CH 40V 0.36W SMD Manufacturer: Microsemi Corporation Packaging: Bulk Part Status: Active FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): 40V Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 50 Ohms Power - Max: 360mW Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: 4-SMD Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Base Part Number: 2N4092 |
auf Bestellung 122 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 121 Stücke - Preis und Lieferfrist anzeigen
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JANTX2N4093UB | Microsemi Corporation |
Description: JFET N-CH 40V 0.36W SMD Manufacturer: Microsemi Corporation Packaging: Bulk Part Status: Active FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 40V Drain to Source Voltage (Vdss): 40V Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 20V Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V Resistance - RDS(On): 80 Ohms Power - Max: 360mW Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Supplier Device Package: UB Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions. Base Part Number: 2N4093 |
auf Bestellung 118 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 118 Stücke - Preis und Lieferfrist anzeigen
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JANTX2N4416AUB | Microsemi Corporation |
Description: JFET N-CH 35V 0.3W 4SMD Supplier Device Package: 4-SMD Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Power - Max: 300mW Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 15V Drain to Source Voltage (Vdss): 35V Voltage - Breakdown (V(BR)GSS): 35V FET Type: N-Channel Part Status: Active Packaging: Bulk |
auf Bestellung 5 Stücke Lieferzeit 21-28 Tag (e)
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
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APTLGL325A1208G |
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Microsemi Corporation |
Description: POWER MOD INTELLIGENT PH LEG LP8 Current: 420A Configuration: Half Bridge Type: IGBT Package / Case: 6-PowerSIP Module Mounting Type: Through Hole Voltage - Isolation: 2500Vrms Voltage: 1.2kV Part Status: Active |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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VRF151G |
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Microsemi Corporation |
Description: MOSFET RF PWR N-CH 50V 300W M208 Voltage - Rated: 170 V Supplier Device Package: M208 Part Status: Active Current - Test: 500 mA Voltage - Test: 50 V Gain: 16dB Power - Output: 300W Frequency: 175MHz Transistor Type: 2 N-Channel (Dual) Common Source Current Rating (Amps): 36A Package / Case: 4-SMD Packaging: Box |
auf Bestellung 7 Stücke Lieferzeit 21-28 Tag (e) |
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VRF3933 |
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Microsemi Corporation |
Description: MOSF RF N CH 250V 20A M177 Supplier Device Package: M177 Package / Case: M177 Voltage - Rated: 250V Power - Output: 300W Current - Test: 250mA Current Rating (Amps): 20A Voltage - Test: 100V Gain: 22dB Frequency: 30MHz Transistor Type: N-Channel Part Status: Active Packaging: Bulk |
auf Bestellung 34 Stücke Lieferzeit 21-28 Tag (e) |
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MSTC110-16 |
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Microsemi Corporation |
Description: POWER MOD THYRISTOR/DIODE T1 Packaging: Bulk Part Status: Obsolete Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.6kV Current - On State (It (AV)) (Max): 110A Voltage - Gate Trigger (Vgt) (Max): 3V Current - Gate Trigger (Igt) (Max): 150mA Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A @ 50Hz Current - Hold (Ih) (Max): 250mA Operating Temperature: -40°C ~ 130°C (TJ) Mounting Type: Screw Mount Package / Case: Module Manufacturer: Microsemi Corporation |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
| A2F060M3E-CSG288 |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 80MHZ 288CSP Peripherals: DMA, POR, WDT RAM Size: 16KB Flash Size: 128KB Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Part Status: Obsolete Packaging: Tray Connectivity: EBI/EMI, I²C, SPI, UART/USART Speed: 80MHz Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops Operating Temperature: 0°C ~ 85°C (TJ) Package / Case: 288-TFBGA, CSPBGA Supplier Device Package: 288-CSP (11x11) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
| A2F060M3E-CSG288I |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 80MHZ 288CSP Supplier Device Package: 288-CSP (11x11) Package / Case: 288-TFBGA, CSPBGA Operating Temperature: -40°C ~ 100°C (TJ) Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops Speed: 80MHz Connectivity: EBI/EMI, I²C, SPI, UART/USART Peripherals: DMA, POR, WDT RAM Size: 16KB Flash Size: 128KB Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Part Status: Obsolete Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | ||||
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M2S005-VF400 |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA Base Part Number: M2S005 Number of I/O: 169 Supplier Device Package: 400-VFBGA (17x17) Package / Case: 400-LFBGA Operating Temperature: 0°C ~ 85°C (TJ) Primary Attributes: FPGA - 5K Logic Modules Speed: 166MHz Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB Peripherals: DDR RAM Size: 64KB Flash Size: 128KB Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Part Status: Active Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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A2F200M3F-FG256 |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 80MHZ 256FBGA Flash Size: 256KB Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA RAM Size: 64KB Part Status: Active Packaging: Tray Peripherals: DMA, POR, WDT Connectivity: EBI/EMI, Ethernet, I²C, SPI, UART/USART Speed: 80MHz Primary Attributes: ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops Operating Temperature: 0°C ~ 85°C (TJ) Package / Case: 256-LBGA Supplier Device Package: 256-FPBGA (17x17) Number of I/O: MCU - 25, FPGA - 66 Base Part Number: A2F200 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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M2S005-1FG484 |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 166MHZ 484FBGA Package / Case: 484-BGA Operating Temperature: 0°C ~ 85°C (TJ) Primary Attributes: FPGA - 5K Logic Modules Speed: 166MHz Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB Peripherals: DDR RAM Size: 64KB Flash Size: 128KB Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Part Status: Active Packaging: Tray Base Part Number: M2S005 Number of I/O: 209 Supplier Device Package: 484-FPBGA (23x23) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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M2S005-1FG484I |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 166MHZ 484FBGA RAM Size: 64KB Flash Size: 128KB Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Part Status: Active Packaging: Tray Base Part Number: M2S005 Number of I/O: 209 Supplier Device Package: 484-FPBGA (23x23) Package / Case: 484-BGA Operating Temperature: -40°C ~ 100°C (TJ) Primary Attributes: FPGA - 5K Logic Modules Speed: 166MHz Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB Peripherals: DDR |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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M2S005S-1FG484I |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 166MHZ 484FBGA Base Part Number: M2S005S Number of I/O: 209 Supplier Device Package: 484-FPBGA (23x23) Package / Case: 484-BGA Operating Temperature: -40°C ~ 100°C (TJ) Primary Attributes: FPGA - 5K Logic Modules Speed: 166MHz Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB Peripherals: DDR RAM Size: 64KB Flash Size: 128KB Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Part Status: Active Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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A2F200M3F-1FG484 |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 100MHZ 484FBGA Primary Attributes: ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops Speed: 100MHz Connectivity: EBI/EMI, Ethernet, I²C, SPI, UART/USART Peripherals: DMA, POR, WDT RAM Size: 64KB Flash Size: 256KB Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Part Status: Active Packaging: Tray Base Part Number: A2F200 Number of I/O: MCU - 41, FPGA - 94 Supplier Device Package: 484-FPBGA (23x23) Package / Case: 484-BGA Operating Temperature: 0°C ~ 85°C (TJ) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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A2F200M3F-1FG484I |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 100MHZ 484FBGA Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Part Status: Active Packaging: Tray Base Part Number: A2F200 Number of I/O: MCU - 41, FPGA - 94 Supplier Device Package: 484-FPBGA (23x23) Package / Case: 484-BGA Operating Temperature: -40°C ~ 100°C (TJ) Primary Attributes: ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops Speed: 100MHz Connectivity: EBI/EMI, Ethernet, I²C, SPI, UART/USART Peripherals: DMA, POR, WDT RAM Size: 64KB Flash Size: 256KB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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M2S010-VF400 |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB Peripherals: DDR, PCIe, SERDES RAM Size: 64KB Flash Size: 256KB Base Part Number: M2S010 Number of I/O: 195 Supplier Device Package: 400-VFBGA (17x17) Package / Case: 400-LFBGA Core Processor: ARM® Cortex®-M3 Operating Temperature: 0°C ~ 85°C (TJ) Architecture: MCU, FPGA Primary Attributes: FPGA - 10K Logic Modules Speed: 166MHz Part Status: Active Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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M2S010T-VF400 |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Number of I/O: 195 Supplier Device Package: 400-VFBGA (17x17) Part Status: Active Packaging: Tray Package / Case: 400-LFBGA Operating Temperature: 0°C ~ 85°C (TJ) Primary Attributes: FPGA - 10K Logic Modules Speed: 166MHz Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB Peripherals: DDR, PCIe, SERDES RAM Size: 64KB Flash Size: 256KB Base Part Number: M2S010T |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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M2S010T-VFG400 |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA Base Part Number: M2S010T Number of I/O: 195 Supplier Device Package: 400-VFBGA (17x17) Package / Case: 400-LFBGA Operating Temperature: 0°C ~ 85°C (TJ) Primary Attributes: FPGA - 10K Logic Modules Speed: 166MHz Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB Peripherals: DDR, PCIe, SERDES RAM Size: 64KB Flash Size: 256KB Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Part Status: Active Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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M2S010-FG484 |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 166MHZ 484FBGA Packaging: Tray Part Status: Active Architecture: MCU, FPGA Core Processor: ARM® Cortex®-M3 Flash Size: 256KB RAM Size: 64KB Peripherals: DDR, PCIe, SERDES Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB Speed: 166MHz Primary Attributes: FPGA - 10K Logic Modules Operating Temperature: 0°C ~ 85°C (TJ) Package / Case: 484-BGA Supplier Device Package: 484-FPBGA (23x23) Number of I/O: 233 Base Part Number: M2S010 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33 Stücke - Preis und Lieferfrist anzeigen
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M2S010-1VF400 |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA Operating Temperature: 0°C ~ 85°C (TJ) Primary Attributes: FPGA - 10K Logic Modules Speed: 166MHz Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB Peripherals: DDR, PCIe, SERDES RAM Size: 64KB Flash Size: 256KB Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Part Status: Active Base Part Number: M2S010 Number of I/O: 195 Supplier Device Package: 400-VFBGA (17x17) Package / Case: 400-LFBGA Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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M2S010-1VFG400 |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Part Status: Active Packaging: Tray Base Part Number: M2S010 Number of I/O: 195 Supplier Device Package: 400-VFBGA (17x17) Package / Case: 400-LFBGA Operating Temperature: 0°C ~ 85°C (TJ) Primary Attributes: FPGA - 10K Logic Modules Speed: 166MHz Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB Peripherals: DDR, PCIe, SERDES RAM Size: 64KB Flash Size: 256KB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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M2S010-1FG484 |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 166MHZ 484FBGA Base Part Number: M2S010 Number of I/O: 233 Supplier Device Package: 484-FPBGA (23x23) Package / Case: 484-BGA Operating Temperature: 0°C ~ 85°C (TJ) Primary Attributes: FPGA - 10K Logic Modules Speed: 166MHz Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB Peripherals: DDR, PCIe, SERDES RAM Size: 64KB Flash Size: 256KB Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Part Status: Active Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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M2S010T-1VF400 |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA Packaging: Tray Part Status: Active Architecture: MCU, FPGA Core Processor: ARM® Cortex®-M3 Flash Size: 256KB RAM Size: 64KB Peripherals: DDR, PCIe, SERDES Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB Speed: 166MHz Primary Attributes: FPGA - 10K Logic Modules Operating Temperature: 0°C ~ 85°C (TJ) Package / Case: 400-LFBGA Supplier Device Package: 400-VFBGA (17x17) Number of I/O: 195 Base Part Number: M2S010T |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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M2S010T-1VFG400 |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA Packaging: Tray Part Status: Active Architecture: MCU, FPGA Core Processor: ARM® Cortex®-M3 Flash Size: 256KB RAM Size: 64KB Peripherals: DDR, PCIe, SERDES Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB Speed: 166MHz Primary Attributes: FPGA - 10K Logic Modules Operating Temperature: 0°C ~ 85°C (TJ) Package / Case: 400-LFBGA Supplier Device Package: 400-VFBGA (17x17) Number of I/O: 195 Base Part Number: M2S010T |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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M2S010T-1FG484 |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 166MHZ 484FBGA Base Part Number: M2S010T Number of I/O: 233 Supplier Device Package: 484-FPBGA (23x23) Package / Case: 484-BGA Operating Temperature: 0°C ~ 85°C (TJ) Primary Attributes: FPGA - 10K Logic Modules Speed: 166MHz Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB Peripherals: DDR, PCIe, SERDES RAM Size: 64KB Flash Size: 256KB Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Part Status: Active Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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A2F500M3G-1FG484 |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 100MHZ 484FBGA Supplier Device Package: 484-FPBGA (23x23) Package / Case: 484-BGA Operating Temperature: 0°C ~ 85°C (TJ) Primary Attributes: ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops Base Part Number: A2F500M3G Number of I/O: MCU - 41, FPGA - 128 Speed: 100MHz Connectivity: EBI/EMI, Ethernet, I²C, SPI, UART/USART Peripherals: DMA, POR, WDT RAM Size: 64KB Flash Size: 512KB Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Part Status: Active Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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M2S010-1FG484I |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 166MHZ 484FBGA Base Part Number: M2S010 Number of I/O: 233 Supplier Device Package: 484-FPBGA (23x23) Package / Case: 484-BGA Operating Temperature: -40°C ~ 100°C (TJ) Primary Attributes: FPGA - 10K Logic Modules Speed: 166MHz Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB Peripherals: DDR, PCIe, SERDES RAM Size: 64KB Flash Size: 256KB Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Part Status: Active Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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M2S010T-1FG484I |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 166MHZ 484FBGA Part Status: Active Packaging: Tray Operating Temperature: -40°C ~ 100°C (TJ) Primary Attributes: FPGA - 10K Logic Modules Speed: 166MHz Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB Peripherals: DDR, PCIe, SERDES RAM Size: 64KB Flash Size: 256KB Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Base Part Number: M2S010T Number of I/O: 233 Supplier Device Package: 484-FPBGA (23x23) Package / Case: 484-BGA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||
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A2F500M3G-1FG484I |
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Microsemi Corporation |
Description: IC SOC CORTEX-M3 100MHZ 484FBGA Base Part Number: A2F500M3G Number of I/O: MCU - 41, FPGA - 128 Supplier Device Package: 484-FPBGA (23x23) Package / Case: 484-BGA Operating Temperature: -40°C ~ 100°C (TJ) Primary Attributes: ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops Speed: 100MHz Connectivity: EBI/EMI, Ethernet, I²C, SPI, UART/USART Peripherals: DMA, POR, WDT RAM Size: 64KB Flash Size: 512KB Core Processor: ARM® Cortex®-M3 Architecture: MCU, FPGA Part Status: Active Packaging: Tray |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
| APTM10DSKM09T3G |
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Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 100V 139A SP3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP3
Package / Case: SP3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 100V 139A SP3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP3
Package / Case: SP3
| APTC60DSKM35T3G |
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 600V 72A SP3
Supplier Device Package: SP3
Package / Case: SP3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 416W
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A
Drain to Source Voltage (Vdss): 600V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 600V 72A SP3
Supplier Device Package: SP3
Package / Case: SP3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 416W
Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
Rds On (Max) @ Id, Vgs: 35mOhm @ 72A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A
Drain to Source Voltage (Vdss): 600V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Bulk
| APTM100DDA35T3G |
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Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1000V 22A SP3
Supplier Device Package: SP3
Package / Case: SP3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 1000V 22A SP3
Supplier Device Package: SP3
Package / Case: SP3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Bulk
| APTM100DSK35T3G |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1000V 22A SP3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Supplier Device Package: SP3
Package / Case: SP3
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 1000V 22A SP3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Supplier Device Package: SP3
Package / Case: SP3
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Packaging: Bulk
Part Status: Active
| APTM50DDAM65T3G |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 500V 51A SP3
Current - Continuous Drain (Id) @ 25°C: 51A
Drain to Source Voltage (Vdss): 500V
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP3
Package / Case: SP3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 500V 51A SP3
Current - Continuous Drain (Id) @ 25°C: 51A
Drain to Source Voltage (Vdss): 500V
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP3
Package / Case: SP3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
| APTM120DDA57T3G |
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Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1200V 17A SP3
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 17A
Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 1200V 17A SP3
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 17A
Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
| APTM120DSK57T3G |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1200V 17A SP3
Supplier Device Package: SP3
Package / Case: SP3
Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Packaging: Bulk
Part Status: Obsolete
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 1200V 17A SP3
Supplier Device Package: SP3
Package / Case: SP3
Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Packaging: Bulk
Part Status: Obsolete
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
| APTM60A11FT1G |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 600V 40A SP1
Packaging: Bulk
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 132mOhm @ 33A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10552pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 600V 40A SP1
Packaging: Bulk
Part Status: Active
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 40A
Rds On (Max) @ Id, Vgs: 132mOhm @ 33A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10552pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
| APTC60DDAM70CT1G |
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 600V 39A SP1
Packaging: Bulk
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 600V 39A SP1
Packaging: Bulk
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
| APTC60DSKM70CT1G |
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 600V 39A SP1
Packaging: Bulk
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 600V 39A SP1
Packaging: Bulk
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 39A
Rds On (Max) @ Id, Vgs: 70mOhm @ 39A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 250W
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
| APTM100DA18CT1G |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 40A SP1
Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 216mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Power Dissipation (Max): 657W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1000V 40A SP1
Input Capacitance (Ciss) (Max) @ Vds: 14800pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 216mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Power Dissipation (Max): 657W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
| APTM10DAM05TG |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 278A SP4
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SP4
Supplier Device Package: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 780W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 278A SP4
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SP4
Supplier Device Package: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 780W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 278A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
| APTM120A65FT1G |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1200V 16A SP1
Supplier Device Package: SP1
Package / Case: SP1
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Bulk
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Rds On (Max) @ Id, Vgs: 780mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 1200V 16A SP1
Supplier Device Package: SP1
Package / Case: SP1
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Bulk
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Rds On (Max) @ Id, Vgs: 780mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Current - Continuous Drain (Id) @ 25°C: 16A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
| APTM100DA18TG |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 43A SP4
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: SP4
Supplier Device Package: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 780W (Tc)
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Drain to Source Voltage (Vdss): 1000V
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1000V 43A SP4
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: SP4
Supplier Device Package: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 780W (Tc)
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Drain to Source Voltage (Vdss): 1000V
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
| APTM100A40FT1G |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1000V 21A SP1
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 480mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 1000V 21A SP1
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 480mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Obsolete
Packaging: Bulk
| APTC90DAM60CT1G |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 900V 59A SP1
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 462W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 900V 59A SP1
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 462W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
| APTM100H45FT3G |
|
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 1000V 18A SP3
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 357W
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 4N-CH 1000V 18A SP3
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 357W
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Supplier Device Package: SP3
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
| APTM10AM05FTG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 100V 278A SP4
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 780W
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 278A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 100V 278A SP4
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 780W
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 278A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
| APTM10TAM19FPG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 6N-CH 100V 70A SP6-P
Supplier Device Package: SP6-P
Package / Case: SP6
Mounting Type: Chassis Mount
Vgs(th) (Max) @ Id: 4V @ 1mA
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 208W
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 6 N-Channel (3-Phase Bridge)
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 6N-CH 100V 70A SP6-P
Supplier Device Package: SP6-P
Package / Case: SP6
Mounting Type: Chassis Mount
Vgs(th) (Max) @ Id: 4V @ 1mA
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 208W
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 6 N-Channel (3-Phase Bridge)
Packaging: Bulk
Part Status: Active
| APTM100H35FT3G |
|
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 1000V 22A SP3
Supplier Device Package: SP3
Package / Case: SP3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 4N-CH 1000V 22A SP3
Supplier Device Package: SP3
Package / Case: SP3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Packaging: Bulk
Part Status: Active
| APTM20HM16FTG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 200V 104A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
FET Type: 4 N-Channel (H-Bridge)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 4N-CH 200V 104A SP4
Packaging: Bulk
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
FET Type: 4 N-Channel (H-Bridge)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Part Status: Active
| APTM100H35FTG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 4N-CH 1000V 22A SP4
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 4N-CH 1000V 22A SP4
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
| APTM20SKM05G |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 317A SP6
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Power Dissipation (Max): 1136W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP6
Package / Case: SP6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 317A SP6
Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Rds On (Max) @ Id, Vgs: 6mOhm @ 158.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
Power Dissipation (Max): 1136W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP6
Package / Case: SP6
| APTML1002U60R020T3AG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1000V 20A SP3
Packaging: Bulk
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 720mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Power - Max: 520W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 1000V 20A SP3
Packaging: Bulk
Part Status: Obsolete
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 720mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Power - Max: 520W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
| APTM10DAM02G |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 495A SP6
Package / Case: SP6
Supplier Device Package: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 1250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 495A SP6
Package / Case: SP6
Supplier Device Package: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 1250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
| APTM10DHM05G |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 100V 278A SP6
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 780W
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 278A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Dual) Asymmetrical
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 100V 278A SP6
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 780W
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 278A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Dual) Asymmetrical
Part Status: Active
Packaging: Bulk
| APTM10UM02FAG |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 570A SP6
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 570A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SP6
Supplier Device Package: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 1660W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 570A SP6
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 570A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SP6
Supplier Device Package: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 1660W (Tc)
| APTM100SKM90G |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 78A SP6
Package / Case: SP6
Supplier Device Package: SP6
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 1250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Mounting Type: Chassis Mount
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 1000V 78A SP6
Package / Case: SP6
Supplier Device Package: SP6
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 1250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Mounting Type: Chassis Mount
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
| APTM10TAM09FPG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 6N-CH 100V 139A SP6-P
FET Type: 6 N-Channel (3-Phase Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP6-P
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 6N-CH 100V 139A SP6-P
FET Type: 6 N-Channel (3-Phase Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP6-P
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 139A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
| APTM10DUM02G |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 100V 495A SP6
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 1250W
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 100V 495A SP6
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 1250W
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 10mA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Bulk
| APTM20TAM16FPG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 6N-CH 200V 104A SP6-P
Packaging: Bulk
Part Status: Active
FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 6N-CH 200V 104A SP6-P
Packaging: Bulk
Part Status: Active
FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 104A
Rds On (Max) @ Id, Vgs: 19mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P
| APTM10UM01FAG |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 860A SP6
Input Capacitance (Ciss) (Max) @ Vds: 60000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 2100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 12mA
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 860A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SP6
Supplier Device Package: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 2500W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 860A SP6
Input Capacitance (Ciss) (Max) @ Vds: 60000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 2100nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 12mA
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 275A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 860A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SP6
Supplier Device Package: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 2500W (Tc)
| APTM50TAM65FPG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 6N-CH 500V 51A SP6-P
Part Status: Active
Packaging: Bulk
FET Type: 6 N-Channel (3-Phase Bridge)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 6N-CH 500V 51A SP6-P
Part Status: Active
Packaging: Bulk
FET Type: 6 N-Channel (3-Phase Bridge)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 51A
Rds On (Max) @ Id, Vgs: 78mOhm @ 25.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6-P
| APTM120TDU57PG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 6N-CH 1200V 17A SP6-P
Supplier Device Package: SP6-P
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Standard
FET Type: 6 N-Channel (3-Phase Bridge)
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 6N-CH 1200V 17A SP6-P
Supplier Device Package: SP6-P
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 684mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
FET Feature: Standard
FET Type: 6 N-Channel (3-Phase Bridge)
Part Status: Obsolete
Packaging: Bulk
| APTM100A13DG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1000V 65A SP6
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 1250W
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Bulk
Vgs(th) (Max) @ Id: 5V @ 6mA
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 1000V 65A SP6
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 1250W
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Bulk
Vgs(th) (Max) @ Id: 5V @ 6mA
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
| APTM100TA35FPG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 6N-CH 1000V 22A SP6-P
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP6-P
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 6 N-Channel (3-Phase Bridge)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 6N-CH 1000V 22A SP6-P
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP6-P
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 390W
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 420mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 6 N-Channel (3-Phase Bridge)
| APTM100A13SG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1000V 65A SP6
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 1250W
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Current - Continuous Drain (Id) @ 25°C: 65A
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET 2N-CH 1000V 65A SP6
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 1250W
Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 6mA
Current - Continuous Drain (Id) @ 25°C: 65A
Rds On (Max) @ Id, Vgs: 156mOhm @ 32.5A, 10V
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Bulk
| APT100GT60JR |
|
Hersteller: Microsemi Corporation
Description: IGBT MOD 600V 148A 500W ISOTOP
Part Status: Active
IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 148A
Power - Max: 500W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Current - Collector Cutoff (Max): 25µA
Input Capacitance (Cies) @ Vce: 5.15nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: ISOTOP®
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IGBT MOD 600V 148A 500W ISOTOP
Part Status: Active
IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 148A
Power - Max: 500W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Current - Collector Cutoff (Max): 25µA
Input Capacitance (Cies) @ Vce: 5.15nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: ISOTOP®
auf Bestellung 104 Stücke - Preis und Lieferfrist anzeigen
| APT30GP60JDQ1 |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 67A 245W ISOTOP
Packaging: Tube
Part Status: Not For New Designs
IGBT Type: PT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 67A
Power - Max: 245W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Current - Collector Cutoff (Max): 500µA
Input Capacitance (Cies) @ Vce: 3.2nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IGBT MODULE 600V 67A 245W ISOTOP
Packaging: Tube
Part Status: Not For New Designs
IGBT Type: PT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 67A
Power - Max: 245W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Current - Collector Cutoff (Max): 500µA
Input Capacitance (Cies) @ Vce: 3.2nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
| APT100GN120J |
|
Hersteller: Microsemi Corporation
Description: IGBT MOD 1200V 153A 446W ISOTOP
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 153A
Power - Max: 446W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IGBT MOD 1200V 153A 446W ISOTOP
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 153A
Power - Max: 446W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
| APT60GF60JU2 |
|
Hersteller: Microsemi Corporation
Description: IGBT 600V 93A 378W SOT227
Supplier Device Package: SOT-227
Package / Case: ISOTOP
Mounting Type: Chassis Mount
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 3.59nF @ 25V
Current - Collector Cutoff (Max): 80µA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Power - Max: 378W
Current - Collector (Ic) (Max): 93A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Single
IGBT Type: NPT
Part Status: Obsolete
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IGBT 600V 93A 378W SOT227
Supplier Device Package: SOT-227
Package / Case: ISOTOP
Mounting Type: Chassis Mount
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 3.59nF @ 25V
Current - Collector Cutoff (Max): 80µA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Power - Max: 378W
Current - Collector (Ic) (Max): 93A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Single
IGBT Type: NPT
Part Status: Obsolete
| APT60GF60JU3 |
|
Hersteller: Microsemi Corporation
Description: IGBT 600V 93A 378W SOT227
IGBT Type: NPT
Part Status: Obsolete
Package / Case: ISOTOP
Mounting Type: Chassis Mount
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 3.59nF @ 25V
Current - Collector Cutoff (Max): 80µA
Supplier Device Package: SOT-227
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Power - Max: 378W
Current - Collector (Ic) (Max): 93A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Single
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IGBT 600V 93A 378W SOT227
IGBT Type: NPT
Part Status: Obsolete
Package / Case: ISOTOP
Mounting Type: Chassis Mount
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 3.59nF @ 25V
Current - Collector Cutoff (Max): 80µA
Supplier Device Package: SOT-227
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Power - Max: 378W
Current - Collector (Ic) (Max): 93A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Single
| APT75GT120JRDQ3 |
|
Hersteller: Microsemi Corporation
Description: IGBT MOD 1200V 97A 480W ISOTOP
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Current - Collector Cutoff (Max): 200 µA
Power - Max: 480 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 97 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IGBT MOD 1200V 97A 480W ISOTOP
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Current - Collector Cutoff (Max): 200 µA
Power - Max: 480 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 97 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: ISOTOP®
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 75A
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
| APTGT75DA60T1G |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 100A 250W SP1
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Input: Standard
Configuration: Single
IGBT Type: Trench Field Stop
Part Status: Active
Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
Current - Collector Cutoff (Max): 250µA
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Power - Max: 250W
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 600V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IGBT MODULE 600V 100A 250W SP1
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Input: Standard
Configuration: Single
IGBT Type: Trench Field Stop
Part Status: Active
Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
Current - Collector Cutoff (Max): 250µA
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Power - Max: 250W
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 600V
| APT100GT60JRDQ4 |
|
Hersteller: Microsemi Corporation
Description: IGBT MOD 600V 148A 500W ISOTOP
Part Status: Active
IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 148A
Power - Max: 500W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Current - Collector Cutoff (Max): 50µA
Input Capacitance (Cies) @ Vce: 5.15nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: ISOTOP®
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IGBT MOD 600V 148A 500W ISOTOP
Part Status: Active
IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 148A
Power - Max: 500W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
Current - Collector Cutoff (Max): 50µA
Input Capacitance (Cies) @ Vce: 5.15nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: ISOTOP
Supplier Device Package: ISOTOP®
| APT100GN120JDQ4 |
Hersteller: Microsemi Corporation
Description: IGBT MOD 1200V 153A 446W ISOTOP
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 153A
Power - Max: 446W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Current - Collector Cutoff (Max): 200µA
Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IGBT MOD 1200V 153A 446W ISOTOP
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 153A
Power - Max: 446W
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Current - Collector Cutoff (Max): 200µA
Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
| APTGT75A60T1G |
|
Hersteller: Microsemi Corporation
Description: IGBT PHASE LEG TRENCH 600V SP1
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Input: Standard
Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
Current - Collector Cutoff (Max): 250µA
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Power - Max: 250W
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Half Bridge
IGBT Type: Trench Field Stop
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IGBT PHASE LEG TRENCH 600V SP1
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Input: Standard
Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
Current - Collector Cutoff (Max): 250µA
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Power - Max: 250W
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Half Bridge
IGBT Type: Trench Field Stop
Part Status: Active
| APT100GT120JU3 |
|
Hersteller: Microsemi Corporation
Description: IGBT MOD 1200V 140A 480W SOT227
Operating Temperature: -55°C ~ 150°C (TJ)
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 7.2nF @ 25V
Current - Collector Cutoff (Max): 5mA
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Power - Max: 480W
Current - Collector (Ic) (Max): 140A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Single
IGBT Type: Trench Field Stop
Part Status: Active
Supplier Device Package: SOT-227
Package / Case: ISOTOP
Mounting Type: Chassis Mount
auf Bestellung 1 Stücke Description: IGBT MOD 1200V 140A 480W SOT227
Operating Temperature: -55°C ~ 150°C (TJ)
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 7.2nF @ 25V
Current - Collector Cutoff (Max): 5mA
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 100A
Power - Max: 480W
Current - Collector (Ic) (Max): 140A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Single
IGBT Type: Trench Field Stop
Part Status: Active
Supplier Device Package: SOT-227
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Lieferzeit 21-28 Tag (e)
| APT15GF120JCU2 |
Hersteller: Microsemi Corporation
Description: IGBT MOD 1200V 30A 156W SOT227
Packaging: Bulk
Part Status: Obsolete
IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Power - Max: 156W
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 1nF @ 25V
Input: Standard
NTC Thermistor: No
Mounting Type: Chassis, Stud Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IGBT MOD 1200V 30A 156W SOT227
Packaging: Bulk
Part Status: Obsolete
IGBT Type: NPT
Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Power - Max: 156W
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 15A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 1nF @ 25V
Input: Standard
NTC Thermistor: No
Mounting Type: Chassis, Stud Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
| APTGT50H60T3G |
|
Hersteller: Microsemi Corporation
Description: POWER MOD IGBT3 FULL BRIDGE SP3
Current - Collector Cutoff (Max): 250µA
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Power - Max: 176W
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Full Bridge Inverter
IGBT Type: Trench Field Stop
Part Status: Active
Supplier Device Package: SP3
Package / Case: SP3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Input: Standard
Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
auf Bestellung 16 Stücke Description: POWER MOD IGBT3 FULL BRIDGE SP3
Current - Collector Cutoff (Max): 250µA
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Power - Max: 176W
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Full Bridge Inverter
IGBT Type: Trench Field Stop
Part Status: Active
Supplier Device Package: SP3
Package / Case: SP3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Input: Standard
Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
Lieferzeit 21-28 Tag (e)
| APTGT75A120T1G |
|
Hersteller: Microsemi Corporation
Description: POWER MOD IGBT TRENCH PH LEG SP1
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 357W
Current - Collector (Ic) (Max): 110A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Half Bridge
IGBT Type: Trench Field Stop
Part Status: Active
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Input: Standard
Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
Current - Collector Cutoff (Max): 250µA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: POWER MOD IGBT TRENCH PH LEG SP1
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 357W
Current - Collector (Ic) (Max): 110A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Half Bridge
IGBT Type: Trench Field Stop
Part Status: Active
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Input: Standard
Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
Current - Collector Cutoff (Max): 250µA
| APTGT50H60RT3G |
|
Hersteller: Microsemi Corporation
Description: POWER MOD IGBT3 FULL BRIDGE SP3
Power - Max: 176W
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Full Bridge Inverter
IGBT Type: Trench Field Stop
Part Status: Active
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
Input: Single Phase Bridge Rectifier
NTC Thermistor: Yes
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: POWER MOD IGBT3 FULL BRIDGE SP3
Power - Max: 176W
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Full Bridge Inverter
IGBT Type: Trench Field Stop
Part Status: Active
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 3.15nF @ 25V
Input: Single Phase Bridge Rectifier
NTC Thermistor: Yes
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
| APTGT75H60T2G |
|
Hersteller: Microsemi Corporation
Description: POWER MOD IGBT3 FULL BRIDGE SP2
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Input: Standard
Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
Current - Collector Cutoff (Max): 250µA
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Power - Max: 250W
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Full Bridge Inverter
IGBT Type: Trench Field Stop
Part Status: Active
Supplier Device Package: SP2
Package / Case: SP2
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: POWER MOD IGBT3 FULL BRIDGE SP2
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: Yes
Input: Standard
Input Capacitance (Cies) @ Vce: 4.62nF @ 25V
Current - Collector Cutoff (Max): 250µA
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Power - Max: 250W
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Full Bridge Inverter
IGBT Type: Trench Field Stop
Part Status: Active
Supplier Device Package: SP2
Package / Case: SP2
Mounting Type: Chassis Mount
| APTGFQ25H120T2G |
|
Hersteller: Microsemi Corporation
Description: IGBT 1200V 40A 227W MODULE
NTC Thermistor: Yes
Input: Standard
Input Capacitance (Cies) @ Vce: 2.02nF @ 25V
Current - Collector Cutoff (Max): 250µA
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Power - Max: 227W
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Full Bridge
IGBT Type: NPT and Fieldstop
Part Status: Not For New Designs
Supplier Device Package: SP2
Package / Case: SP2
Mounting Type: Through Hole
auf Bestellung 14 Stücke Description: IGBT 1200V 40A 227W MODULE
NTC Thermistor: Yes
Input: Standard
Input Capacitance (Cies) @ Vce: 2.02nF @ 25V
Current - Collector Cutoff (Max): 250µA
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Power - Max: 227W
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Full Bridge
IGBT Type: NPT and Fieldstop
Part Status: Not For New Designs
Supplier Device Package: SP2
Package / Case: SP2
Mounting Type: Through Hole
Lieferzeit 21-28 Tag (e)
| APTGT75SK120TG |
|
Hersteller: Microsemi Corporation
Description: IGBT 1200V 110A 357W SP4
Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
Current - Collector Cutoff (Max): 250µA
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 357W
Current - Collector (Ic) (Max): 110A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Single
IGBT Type: Trench Field Stop
Part Status: Active
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Input: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IGBT 1200V 110A 357W SP4
Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
Current - Collector Cutoff (Max): 250µA
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 357W
Current - Collector (Ic) (Max): 110A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Single
IGBT Type: Trench Field Stop
Part Status: Active
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
Input: Standard
| APTGT200A602G |
|
Hersteller: Microsemi Corporation
Description: POWER MOD IGBT3 PHASE LEG SP2
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 290A
Power - Max: 625W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
Current - Collector Cutoff (Max): 50µA
Input Capacitance (Cies) @ Vce: 12.3nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP2
Supplier Device Package: SP2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: POWER MOD IGBT3 PHASE LEG SP2
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 290A
Power - Max: 625W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 200A
Current - Collector Cutoff (Max): 50µA
Input Capacitance (Cies) @ Vce: 12.3nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP2
Supplier Device Package: SP2
| APTGF100A1202G |
|
Hersteller: Microsemi Corporation
Description: POWER MOD IGBT NPT PHASE LEG SP2
Part Status: Obsolete
IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 135A
Power - Max: 568W
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
Input: Standard
NTC Thermistor: No
Mounting Type: Chassis Mount
Package / Case: SP2
Supplier Device Package: SP2
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: POWER MOD IGBT NPT PHASE LEG SP2
Part Status: Obsolete
IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 135A
Power - Max: 568W
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
Input: Standard
NTC Thermistor: No
Mounting Type: Chassis Mount
Package / Case: SP2
Supplier Device Package: SP2
| APTGF100A120T3AG |
|
Hersteller: Microsemi Corporation
Description: MOD IGBT NPT 1200V 130A SP3
Part Status: Obsolete
IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 130A
Power - Max: 780W
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOD IGBT NPT 1200V 130A SP3
Part Status: Obsolete
IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 130A
Power - Max: 780W
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
Current - Collector Cutoff (Max): 250µA
Input Capacitance (Cies) @ Vce: 6.5nF @ 25V
Input: Standard
NTC Thermistor: Yes
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
| APTGF165A60D1G |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 230A 781W D1
Supplier Device Package: D1
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
NTC Thermistor: No
Input Capacitance (Cies) @ Vce: 9nF @ 25V
Current - Collector Cutoff (Max): 250µA
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
Power - Max: 781W
Current - Collector (Ic) (Max): 230A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Half Bridge
IGBT Type: NPT
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IGBT MODULE 600V 230A 781W D1
Supplier Device Package: D1
Package / Case: D1
Mounting Type: Chassis Mount
Input: Standard
NTC Thermistor: No
Input Capacitance (Cies) @ Vce: 9nF @ 25V
Current - Collector Cutoff (Max): 250µA
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
Power - Max: 781W
Current - Collector (Ic) (Max): 230A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Half Bridge
IGBT Type: NPT
Part Status: Obsolete
Packaging: Bulk
auf Bestellung 150 Stücke - Preis und Lieferfrist anzeigen
| APTGF100A120TG |
|
Hersteller: Microsemi Corporation
Description: POWER MOD IGBT NPT PHASE LEG SP4
Part Status: Obsolete
IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 135A
Power - Max: 568W
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
Current - Collector Cutoff (Max): 350µA
Input Capacitance (Cies) @ Vce: 6.9nF @ 25V
Input: Standard
NTC Thermistor: Yes
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: POWER MOD IGBT NPT PHASE LEG SP4
Part Status: Obsolete
IGBT Type: NPT
Configuration: Half Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 135A
Power - Max: 568W
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
Current - Collector Cutoff (Max): 350µA
Input Capacitance (Cies) @ Vce: 6.9nF @ 25V
Input: Standard
NTC Thermistor: Yes
Mounting Type: Chassis Mount
Package / Case: SP4
Supplier Device Package: SP4
| APTGL180A1202G |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 1200V 220A 750W SP2
Supplier Device Package: SP2
Package / Case: SP2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: No
Part Status: Active
Input: Standard
Packaging: Bulk
Manufacturer: Microsemi Corporation
Input Capacitance (Cies) @ Vce: 9.3nF @ 25V
Current - Collector Cutoff (Max): 300µA
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Power - Max: 750W
Current - Collector (Ic) (Max): 220A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Half Bridge
IGBT Type: Trench Field Stop
Base Part Number: APTGL180
auf Bestellung 2 Stücke Description: IGBT MODULE 1200V 220A 750W SP2
Supplier Device Package: SP2
Package / Case: SP2
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: No
Part Status: Active
Input: Standard
Packaging: Bulk
Manufacturer: Microsemi Corporation
Input Capacitance (Cies) @ Vce: 9.3nF @ 25V
Current - Collector Cutoff (Max): 300µA
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Power - Max: 750W
Current - Collector (Ic) (Max): 220A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Half Bridge
IGBT Type: Trench Field Stop
Base Part Number: APTGL180
Lieferzeit 21-28 Tag (e)
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
| APTGT150SK120G |
|
Hersteller: Microsemi Corporation
Description: IGBT 1200V 220A 690W SP6
Current - Collector (Ic) (Max): 220A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Single
IGBT Type: Trench Field Stop
Part Status: Active
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 10.7nF @ 25V
Current - Collector Cutoff (Max): 350µA
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Power - Max: 690W
auf Bestellung 1 Stücke Description: IGBT 1200V 220A 690W SP6
Current - Collector (Ic) (Max): 220A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Single
IGBT Type: Trench Field Stop
Part Status: Active
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 10.7nF @ 25V
Current - Collector Cutoff (Max): 350µA
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Power - Max: 690W
Lieferzeit 21-28 Tag (e)
| APTGF330DA60D3G |
|
Hersteller: Microsemi Corporation
Description: IGBT MODULE 600V 460A 1400W D3
IGBT Type: NPT
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: D3
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 18nF @ 25V
Current - Collector Cutoff (Max): 750µA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 400A
Power - Max: 1400W
Current - Collector (Ic) (Max): 460A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Single
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IGBT MODULE 600V 460A 1400W D3
IGBT Type: NPT
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: D3
Package / Case: D-3 Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 18nF @ 25V
Current - Collector Cutoff (Max): 750µA
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 400A
Power - Max: 1400W
Current - Collector (Ic) (Max): 460A
Voltage - Collector Emitter Breakdown (Max): 600V
Configuration: Single
| APTGLQ200HR120G |
|
Hersteller: Microsemi Corporation
Description: PWR MOD PHASE LEG/DUAL CE SP6
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 9.2nF @ 25V
Current - Collector Cutoff (Max): 200µA
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 160A
Power - Max: 1000W
Current - Collector (Ic) (Max): 300A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: Trench Field Stop
Part Status: Active
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: PWR MOD PHASE LEG/DUAL CE SP6
Operating Temperature: -40°C ~ 175°C (TJ)
NTC Thermistor: No
Input: Standard
Input Capacitance (Cies) @ Vce: 9.2nF @ 25V
Current - Collector Cutoff (Max): 200µA
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 160A
Power - Max: 1000W
Current - Collector (Ic) (Max): 300A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: Trench Field Stop
Part Status: Active
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Through Hole
| APTGT75TA120PG |
|
Hersteller: Microsemi Corporation
Description: POWER MOD IGBT 3PHASE LEG SP6
Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
Current - Collector Cutoff (Max): 250µA
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 350W
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Three Phase
IGBT Type: Trench Field Stop
Part Status: Active
Supplier Device Package: SP6-P
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Input: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: POWER MOD IGBT 3PHASE LEG SP6
Input Capacitance (Cies) @ Vce: 5.34nF @ 25V
Current - Collector Cutoff (Max): 250µA
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Power - Max: 350W
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 1200V
Configuration: Three Phase
IGBT Type: Trench Field Stop
Part Status: Active
Supplier Device Package: SP6-P
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: No
Input: Standard
| APTGLQ200H120G |
|
Hersteller: Microsemi Corporation
Description: PWR MOD IGBT4 1200V 350A SP6
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 350A
Power - Max: 1000W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 200A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 12.3nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: PWR MOD IGBT4 1200V 350A SP6
Part Status: Active
IGBT Type: Trench Field Stop
Configuration: Full Bridge
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 350A
Power - Max: 1000W
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 200A
Current - Collector Cutoff (Max): 100µA
Input Capacitance (Cies) @ Vce: 12.3nF @ 25V
Input: Standard
NTC Thermistor: No
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP6
Supplier Device Package: SP6
| JANTX2N4859 |
|
Hersteller: Microsemi Corporation
Description: JFET N-CH 30V 360MW TO-18
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Resistance - RDS(On): 25 Ohms
Power - Max: 360mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Base Part Number: 2N4859
auf Bestellung 1028 Stücke Description: JFET N-CH 30V 360MW TO-18
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Drain to Source Voltage (Vdss): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 175mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 10V @ 500pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Resistance - RDS(On): 25 Ohms
Power - Max: 360mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Base Part Number: 2N4859
Lieferzeit 21-28 Tag (e)
auf Bestellung 18024 Stücke - Preis und Lieferfrist anzeigen
| JANTX2N4857 |
|
Hersteller: Microsemi Corporation
Description: JFET N-CH 40V 360MW TO-18
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Resistance - RDS(On): 40 Ohms
Power - Max: 360mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: JFET N-CH 40V 360MW TO-18
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 6V @ 500pA
Input Capacitance (Ciss) (Max) @ Vds: 18pF @ 10V (VGS)
Resistance - RDS(On): 40 Ohms
Power - Max: 360mW
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
auf Bestellung 17000 Stücke - Preis und Lieferfrist anzeigen
| JANTX2N4091 |
Hersteller: Microsemi Corporation
Description: JFET N-CH 40V 360MW TO-18
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Power - Max: 360mW
Resistance - RDS(On): 30 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V
Drain to Source Voltage (Vdss): 40V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Active
Manufacturer: Microsemi Corporation
Packaging: Bulk
Base Part Number: 2N4091
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-18
auf Bestellung 105 Stücke Description: JFET N-CH 40V 360MW TO-18
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Power - Max: 360mW
Resistance - RDS(On): 30 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Current - Drain (Idss) @ Vds (Vgs=0): 30mA @ 20V
Drain to Source Voltage (Vdss): 40V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Active
Manufacturer: Microsemi Corporation
Packaging: Bulk
Base Part Number: 2N4091
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Supplier Device Package: TO-18
Lieferzeit 21-28 Tag (e)
auf Bestellung 10717 Stücke - Preis und Lieferfrist anzeigen
| JANTX2N4092 |
Hersteller: Microsemi Corporation
Description: JFET N-CH 40V 360MW TO-18
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
Drain to Source Voltage (Vdss): 40V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Operating Temperature: -65°C ~ 175°C (TJ)
Power - Max: 360mW
Resistance - RDS(On): 50 Ohms
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Base Part Number: 2N4092
auf Bestellung 62 Stücke Description: JFET N-CH 40V 360MW TO-18
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
Drain to Source Voltage (Vdss): 40V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Operating Temperature: -65°C ~ 175°C (TJ)
Power - Max: 360mW
Resistance - RDS(On): 50 Ohms
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Base Part Number: 2N4092
Lieferzeit 21-28 Tag (e)
auf Bestellung 20371 Stücke - Preis und Lieferfrist anzeigen
| JANTX2N4092UB |
Hersteller: Microsemi Corporation
Description: JFET N-CH 40V 0.36W SMD
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 50 Ohms
Power - Max: 360mW
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: 4-SMD
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Base Part Number: 2N4092
auf Bestellung 122 Stücke Description: JFET N-CH 40V 0.36W SMD
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 50 Ohms
Power - Max: 360mW
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: 4-SMD
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Base Part Number: 2N4092
Lieferzeit 21-28 Tag (e)
auf Bestellung 121 Stücke - Preis und Lieferfrist anzeigen
| JANTX2N4093UB |
Hersteller: Microsemi Corporation
Description: JFET N-CH 40V 0.36W SMD
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 80 Ohms
Power - Max: 360mW
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Base Part Number: 2N4093
auf Bestellung 118 Stücke Description: JFET N-CH 40V 0.36W SMD
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Active
FET Type: N-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Drain to Source Voltage (Vdss): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 16pF @ 20V
Resistance - RDS(On): 80 Ohms
Power - Max: 360mW
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Supplier Device Package: UB
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Base Part Number: 2N4093
Lieferzeit 21-28 Tag (e)
auf Bestellung 118 Stücke - Preis und Lieferfrist anzeigen
| JANTX2N4416AUB |
Hersteller: Microsemi Corporation
Description: JFET N-CH 35V 0.3W 4SMD
Supplier Device Package: 4-SMD
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 15V
Drain to Source Voltage (Vdss): 35V
Voltage - Breakdown (V(BR)GSS): 35V
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
auf Bestellung 5 Stücke Description: JFET N-CH 35V 0.3W 4SMD
Supplier Device Package: 4-SMD
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 6V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 15mA @ 15V
Drain to Source Voltage (Vdss): 35V
Voltage - Breakdown (V(BR)GSS): 35V
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
| APTLGL325A1208G |
|
Hersteller: Microsemi Corporation
Description: POWER MOD INTELLIGENT PH LEG LP8
Current: 420A
Configuration: Half Bridge
Type: IGBT
Package / Case: 6-PowerSIP Module
Mounting Type: Through Hole
Voltage - Isolation: 2500Vrms
Voltage: 1.2kV
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: POWER MOD INTELLIGENT PH LEG LP8
Current: 420A
Configuration: Half Bridge
Type: IGBT
Package / Case: 6-PowerSIP Module
Mounting Type: Through Hole
Voltage - Isolation: 2500Vrms
Voltage: 1.2kV
Part Status: Active
| VRF151G |
|
Hersteller: Microsemi Corporation
Description: MOSFET RF PWR N-CH 50V 300W M208
Voltage - Rated: 170 V
Supplier Device Package: M208
Part Status: Active
Current - Test: 500 mA
Voltage - Test: 50 V
Gain: 16dB
Power - Output: 300W
Frequency: 175MHz
Transistor Type: 2 N-Channel (Dual) Common Source
Current Rating (Amps): 36A
Package / Case: 4-SMD
Packaging: Box
auf Bestellung 7 Stücke Description: MOSFET RF PWR N-CH 50V 300W M208
Voltage - Rated: 170 V
Supplier Device Package: M208
Part Status: Active
Current - Test: 500 mA
Voltage - Test: 50 V
Gain: 16dB
Power - Output: 300W
Frequency: 175MHz
Transistor Type: 2 N-Channel (Dual) Common Source
Current Rating (Amps): 36A
Package / Case: 4-SMD
Packaging: Box
Lieferzeit 21-28 Tag (e)
|
| VRF3933 |
|
Hersteller: Microsemi Corporation
Description: MOSF RF N CH 250V 20A M177
Supplier Device Package: M177
Package / Case: M177
Voltage - Rated: 250V
Power - Output: 300W
Current - Test: 250mA
Current Rating (Amps): 20A
Voltage - Test: 100V
Gain: 22dB
Frequency: 30MHz
Transistor Type: N-Channel
Part Status: Active
Packaging: Bulk
auf Bestellung 34 Stücke Description: MOSF RF N CH 250V 20A M177
Supplier Device Package: M177
Package / Case: M177
Voltage - Rated: 250V
Power - Output: 300W
Current - Test: 250mA
Current Rating (Amps): 20A
Voltage - Test: 100V
Gain: 22dB
Frequency: 30MHz
Transistor Type: N-Channel
Part Status: Active
Packaging: Bulk
Lieferzeit 21-28 Tag (e)
| MSTC110-16 |
|
Hersteller: Microsemi Corporation
Description: POWER MOD THYRISTOR/DIODE T1
Packaging: Bulk
Part Status: Obsolete
Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1.6kV
Current - On State (It (AV)) (Max): 110A
Voltage - Gate Trigger (Vgt) (Max): 3V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A @ 50Hz
Current - Hold (Ih) (Max): 250mA
Operating Temperature: -40°C ~ 130°C (TJ)
Mounting Type: Screw Mount
Package / Case: Module
Manufacturer: Microsemi Corporation
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: POWER MOD THYRISTOR/DIODE T1
Packaging: Bulk
Part Status: Obsolete
Structure: Series Connection - All SCRs
Number of SCRs, Diodes: 2 SCRs
Voltage - Off State: 1.6kV
Current - On State (It (AV)) (Max): 110A
Voltage - Gate Trigger (Vgt) (Max): 3V
Current - Gate Trigger (Igt) (Max): 150mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 2250A @ 50Hz
Current - Hold (Ih) (Max): 250mA
Operating Temperature: -40°C ~ 130°C (TJ)
Mounting Type: Screw Mount
Package / Case: Module
Manufacturer: Microsemi Corporation
| A2F060M3E-CSG288 |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 288CSP
Peripherals: DMA, POR, WDT
RAM Size: 16KB
Flash Size: 128KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Obsolete
Packaging: Tray
Connectivity: EBI/EMI, I²C, SPI, UART/USART
Speed: 80MHz
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Operating Temperature: 0°C ~ 85°C (TJ)
Package / Case: 288-TFBGA, CSPBGA
Supplier Device Package: 288-CSP (11x11)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 80MHZ 288CSP
Peripherals: DMA, POR, WDT
RAM Size: 16KB
Flash Size: 128KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Obsolete
Packaging: Tray
Connectivity: EBI/EMI, I²C, SPI, UART/USART
Speed: 80MHz
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Operating Temperature: 0°C ~ 85°C (TJ)
Package / Case: 288-TFBGA, CSPBGA
Supplier Device Package: 288-CSP (11x11)
| A2F060M3E-CSG288I |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 288CSP
Supplier Device Package: 288-CSP (11x11)
Package / Case: 288-TFBGA, CSPBGA
Operating Temperature: -40°C ~ 100°C (TJ)
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Speed: 80MHz
Connectivity: EBI/EMI, I²C, SPI, UART/USART
Peripherals: DMA, POR, WDT
RAM Size: 16KB
Flash Size: 128KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Obsolete
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 80MHZ 288CSP
Supplier Device Package: 288-CSP (11x11)
Package / Case: 288-TFBGA, CSPBGA
Operating Temperature: -40°C ~ 100°C (TJ)
Primary Attributes: ProASIC®3 FPGA, 60K Gates, 1536D-Flip-Flops
Speed: 80MHz
Connectivity: EBI/EMI, I²C, SPI, UART/USART
Peripherals: DMA, POR, WDT
RAM Size: 16KB
Flash Size: 128KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Obsolete
Packaging: Tray
| M2S005-VF400 |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA
Base Part Number: M2S005
Number of I/O: 169
Supplier Device Package: 400-VFBGA (17x17)
Package / Case: 400-LFBGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: FPGA - 5K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR
RAM Size: 64KB
Flash Size: 128KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 166MHZ 400VFBGA
Base Part Number: M2S005
Number of I/O: 169
Supplier Device Package: 400-VFBGA (17x17)
Package / Case: 400-LFBGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: FPGA - 5K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR
RAM Size: 64KB
Flash Size: 128KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
| A2F200M3F-FG256 |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 80MHZ 256FBGA
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
RAM Size: 64KB
Part Status: Active
Packaging: Tray
Peripherals: DMA, POR, WDT
Connectivity: EBI/EMI, Ethernet, I²C, SPI, UART/USART
Speed: 80MHz
Primary Attributes: ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops
Operating Temperature: 0°C ~ 85°C (TJ)
Package / Case: 256-LBGA
Supplier Device Package: 256-FPBGA (17x17)
Number of I/O: MCU - 25, FPGA - 66
Base Part Number: A2F200
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 80MHZ 256FBGA
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
RAM Size: 64KB
Part Status: Active
Packaging: Tray
Peripherals: DMA, POR, WDT
Connectivity: EBI/EMI, Ethernet, I²C, SPI, UART/USART
Speed: 80MHz
Primary Attributes: ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops
Operating Temperature: 0°C ~ 85°C (TJ)
Package / Case: 256-LBGA
Supplier Device Package: 256-FPBGA (17x17)
Number of I/O: MCU - 25, FPGA - 66
Base Part Number: A2F200
| M2S005-1FG484 |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 484FBGA
Package / Case: 484-BGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: FPGA - 5K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR
RAM Size: 64KB
Flash Size: 128KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Base Part Number: M2S005
Number of I/O: 209
Supplier Device Package: 484-FPBGA (23x23)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 166MHZ 484FBGA
Package / Case: 484-BGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: FPGA - 5K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR
RAM Size: 64KB
Flash Size: 128KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Base Part Number: M2S005
Number of I/O: 209
Supplier Device Package: 484-FPBGA (23x23)
| M2S005-1FG484I |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 484FBGA
RAM Size: 64KB
Flash Size: 128KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Base Part Number: M2S005
Number of I/O: 209
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: -40°C ~ 100°C (TJ)
Primary Attributes: FPGA - 5K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 166MHZ 484FBGA
RAM Size: 64KB
Flash Size: 128KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Base Part Number: M2S005
Number of I/O: 209
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: -40°C ~ 100°C (TJ)
Primary Attributes: FPGA - 5K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR
| M2S005S-1FG484I |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 484FBGA
Base Part Number: M2S005S
Number of I/O: 209
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: -40°C ~ 100°C (TJ)
Primary Attributes: FPGA - 5K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR
RAM Size: 64KB
Flash Size: 128KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 166MHZ 484FBGA
Base Part Number: M2S005S
Number of I/O: 209
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: -40°C ~ 100°C (TJ)
Primary Attributes: FPGA - 5K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR
RAM Size: 64KB
Flash Size: 128KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
| A2F200M3F-1FG484 |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 100MHZ 484FBGA
Primary Attributes: ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops
Speed: 100MHz
Connectivity: EBI/EMI, Ethernet, I²C, SPI, UART/USART
Peripherals: DMA, POR, WDT
RAM Size: 64KB
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Base Part Number: A2F200
Number of I/O: MCU - 41, FPGA - 94
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: 0°C ~ 85°C (TJ)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 100MHZ 484FBGA
Primary Attributes: ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops
Speed: 100MHz
Connectivity: EBI/EMI, Ethernet, I²C, SPI, UART/USART
Peripherals: DMA, POR, WDT
RAM Size: 64KB
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Base Part Number: A2F200
Number of I/O: MCU - 41, FPGA - 94
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: 0°C ~ 85°C (TJ)
| A2F200M3F-1FG484I |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 100MHZ 484FBGA
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Base Part Number: A2F200
Number of I/O: MCU - 41, FPGA - 94
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: -40°C ~ 100°C (TJ)
Primary Attributes: ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops
Speed: 100MHz
Connectivity: EBI/EMI, Ethernet, I²C, SPI, UART/USART
Peripherals: DMA, POR, WDT
RAM Size: 64KB
Flash Size: 256KB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 100MHZ 484FBGA
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Base Part Number: A2F200
Number of I/O: MCU - 41, FPGA - 94
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: -40°C ~ 100°C (TJ)
Primary Attributes: ProASIC®3 FPGA, 200K Gates, 4608 D-Flip-Flops
Speed: 100MHz
Connectivity: EBI/EMI, Ethernet, I²C, SPI, UART/USART
Peripherals: DMA, POR, WDT
RAM Size: 64KB
Flash Size: 256KB
| M2S010-VF400 |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Base Part Number: M2S010
Number of I/O: 195
Supplier Device Package: 400-VFBGA (17x17)
Package / Case: 400-LFBGA
Core Processor: ARM® Cortex®-M3
Operating Temperature: 0°C ~ 85°C (TJ)
Architecture: MCU, FPGA
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 166MHZ 400VFBGA
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Base Part Number: M2S010
Number of I/O: 195
Supplier Device Package: 400-VFBGA (17x17)
Package / Case: 400-LFBGA
Core Processor: ARM® Cortex®-M3
Operating Temperature: 0°C ~ 85°C (TJ)
Architecture: MCU, FPGA
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Part Status: Active
Packaging: Tray
| M2S010T-VF400 |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Number of I/O: 195
Supplier Device Package: 400-VFBGA (17x17)
Part Status: Active
Packaging: Tray
Package / Case: 400-LFBGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Base Part Number: M2S010T
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 166MHZ 400VFBGA
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Number of I/O: 195
Supplier Device Package: 400-VFBGA (17x17)
Part Status: Active
Packaging: Tray
Package / Case: 400-LFBGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Base Part Number: M2S010T
| M2S010T-VFG400 |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA
Base Part Number: M2S010T
Number of I/O: 195
Supplier Device Package: 400-VFBGA (17x17)
Package / Case: 400-LFBGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 166MHZ 400VFBGA
Base Part Number: M2S010T
Number of I/O: 195
Supplier Device Package: 400-VFBGA (17x17)
Package / Case: 400-LFBGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
| M2S010-FG484 |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 484FBGA
Packaging: Tray
Part Status: Active
Architecture: MCU, FPGA
Core Processor: ARM® Cortex®-M3
Flash Size: 256KB
RAM Size: 64KB
Peripherals: DDR, PCIe, SERDES
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Speed: 166MHz
Primary Attributes: FPGA - 10K Logic Modules
Operating Temperature: 0°C ~ 85°C (TJ)
Package / Case: 484-BGA
Supplier Device Package: 484-FPBGA (23x23)
Number of I/O: 233
Base Part Number: M2S010
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 166MHZ 484FBGA
Packaging: Tray
Part Status: Active
Architecture: MCU, FPGA
Core Processor: ARM® Cortex®-M3
Flash Size: 256KB
RAM Size: 64KB
Peripherals: DDR, PCIe, SERDES
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Speed: 166MHz
Primary Attributes: FPGA - 10K Logic Modules
Operating Temperature: 0°C ~ 85°C (TJ)
Package / Case: 484-BGA
Supplier Device Package: 484-FPBGA (23x23)
Number of I/O: 233
Base Part Number: M2S010
auf Bestellung 33 Stücke - Preis und Lieferfrist anzeigen
| M2S010-1VF400 |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Base Part Number: M2S010
Number of I/O: 195
Supplier Device Package: 400-VFBGA (17x17)
Package / Case: 400-LFBGA
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 166MHZ 400VFBGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Base Part Number: M2S010
Number of I/O: 195
Supplier Device Package: 400-VFBGA (17x17)
Package / Case: 400-LFBGA
Packaging: Tray
| M2S010-1VFG400 |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Base Part Number: M2S010
Number of I/O: 195
Supplier Device Package: 400-VFBGA (17x17)
Package / Case: 400-LFBGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 166MHZ 400VFBGA
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Base Part Number: M2S010
Number of I/O: 195
Supplier Device Package: 400-VFBGA (17x17)
Package / Case: 400-LFBGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
| M2S010-1FG484 |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 484FBGA
Base Part Number: M2S010
Number of I/O: 233
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 166MHZ 484FBGA
Base Part Number: M2S010
Number of I/O: 233
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
| M2S010T-1VF400 |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA
Packaging: Tray
Part Status: Active
Architecture: MCU, FPGA
Core Processor: ARM® Cortex®-M3
Flash Size: 256KB
RAM Size: 64KB
Peripherals: DDR, PCIe, SERDES
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Speed: 166MHz
Primary Attributes: FPGA - 10K Logic Modules
Operating Temperature: 0°C ~ 85°C (TJ)
Package / Case: 400-LFBGA
Supplier Device Package: 400-VFBGA (17x17)
Number of I/O: 195
Base Part Number: M2S010T
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 166MHZ 400VFBGA
Packaging: Tray
Part Status: Active
Architecture: MCU, FPGA
Core Processor: ARM® Cortex®-M3
Flash Size: 256KB
RAM Size: 64KB
Peripherals: DDR, PCIe, SERDES
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Speed: 166MHz
Primary Attributes: FPGA - 10K Logic Modules
Operating Temperature: 0°C ~ 85°C (TJ)
Package / Case: 400-LFBGA
Supplier Device Package: 400-VFBGA (17x17)
Number of I/O: 195
Base Part Number: M2S010T
| M2S010T-1VFG400 |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 400VFBGA
Packaging: Tray
Part Status: Active
Architecture: MCU, FPGA
Core Processor: ARM® Cortex®-M3
Flash Size: 256KB
RAM Size: 64KB
Peripherals: DDR, PCIe, SERDES
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Speed: 166MHz
Primary Attributes: FPGA - 10K Logic Modules
Operating Temperature: 0°C ~ 85°C (TJ)
Package / Case: 400-LFBGA
Supplier Device Package: 400-VFBGA (17x17)
Number of I/O: 195
Base Part Number: M2S010T
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 166MHZ 400VFBGA
Packaging: Tray
Part Status: Active
Architecture: MCU, FPGA
Core Processor: ARM® Cortex®-M3
Flash Size: 256KB
RAM Size: 64KB
Peripherals: DDR, PCIe, SERDES
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Speed: 166MHz
Primary Attributes: FPGA - 10K Logic Modules
Operating Temperature: 0°C ~ 85°C (TJ)
Package / Case: 400-LFBGA
Supplier Device Package: 400-VFBGA (17x17)
Number of I/O: 195
Base Part Number: M2S010T
| M2S010T-1FG484 |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 484FBGA
Base Part Number: M2S010T
Number of I/O: 233
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 166MHZ 484FBGA
Base Part Number: M2S010T
Number of I/O: 233
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
| A2F500M3G-1FG484 |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 100MHZ 484FBGA
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops
Base Part Number: A2F500M3G
Number of I/O: MCU - 41, FPGA - 128
Speed: 100MHz
Connectivity: EBI/EMI, Ethernet, I²C, SPI, UART/USART
Peripherals: DMA, POR, WDT
RAM Size: 64KB
Flash Size: 512KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 100MHZ 484FBGA
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: 0°C ~ 85°C (TJ)
Primary Attributes: ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops
Base Part Number: A2F500M3G
Number of I/O: MCU - 41, FPGA - 128
Speed: 100MHz
Connectivity: EBI/EMI, Ethernet, I²C, SPI, UART/USART
Peripherals: DMA, POR, WDT
RAM Size: 64KB
Flash Size: 512KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
| M2S010-1FG484I |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 484FBGA
Base Part Number: M2S010
Number of I/O: 233
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: -40°C ~ 100°C (TJ)
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 166MHZ 484FBGA
Base Part Number: M2S010
Number of I/O: 233
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: -40°C ~ 100°C (TJ)
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
| M2S010T-1FG484I |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 166MHZ 484FBGA
Part Status: Active
Packaging: Tray
Operating Temperature: -40°C ~ 100°C (TJ)
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Base Part Number: M2S010T
Number of I/O: 233
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 166MHZ 484FBGA
Part Status: Active
Packaging: Tray
Operating Temperature: -40°C ~ 100°C (TJ)
Primary Attributes: FPGA - 10K Logic Modules
Speed: 166MHz
Connectivity: CANbus, Ethernet, I²C, SPI, UART/USART, USB
Peripherals: DDR, PCIe, SERDES
RAM Size: 64KB
Flash Size: 256KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Base Part Number: M2S010T
Number of I/O: 233
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
| A2F500M3G-1FG484I |
|
Hersteller: Microsemi Corporation
Description: IC SOC CORTEX-M3 100MHZ 484FBGA
Base Part Number: A2F500M3G
Number of I/O: MCU - 41, FPGA - 128
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: -40°C ~ 100°C (TJ)
Primary Attributes: ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops
Speed: 100MHz
Connectivity: EBI/EMI, Ethernet, I²C, SPI, UART/USART
Peripherals: DMA, POR, WDT
RAM Size: 64KB
Flash Size: 512KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC SOC CORTEX-M3 100MHZ 484FBGA
Base Part Number: A2F500M3G
Number of I/O: MCU - 41, FPGA - 128
Supplier Device Package: 484-FPBGA (23x23)
Package / Case: 484-BGA
Operating Temperature: -40°C ~ 100°C (TJ)
Primary Attributes: ProASIC®3 FPGA, 500K Gates, 11520 D-Flip-Flops
Speed: 100MHz
Connectivity: EBI/EMI, Ethernet, I²C, SPI, UART/USART
Peripherals: DMA, POR, WDT
RAM Size: 64KB
Flash Size: 512KB
Core Processor: ARM® Cortex®-M3
Architecture: MCU, FPGA
Part Status: Active
Packaging: Tray
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