Die Produkte microsemi corporation

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Foto Bezeichnung Tech.inf. Hersteller Beschreibung Informationen zu Lagerverfügbarkeit und Lieferzeiten
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SMBG5948C/TR13 10867-sa3-41-datasheet Microsemi Corporation Description: DIODE ZENER 91V 2W SMBG
Current - Reverse Leakage @ Vr: 1µA @ 69.2V
Impedance (Max) (Zzt): 200 Ohms
Power - Max: 2W
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 91V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SMBG (DO-215AA)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N968B 1N968B 1N957B(-1)-1N992B(-1),e3.pdf Microsemi Corporation Description: DIODE ZENER 20V 500MW DO7
Supplier Device Package: DO-7
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 15.2V
Impedance (Max) (Zzt): 25 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 20V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 194820 Stücke - Preis und Lieferfrist anzeigen
1N975B 1N975B 10900-sa5-11-datasheet Microsemi Corporation Description: DIODE ZENER 39V 500MW DO7
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 29.7V
Impedance (Max) (Zzt): 80 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 39V
Part Status: Active
Packaging: Bulk
Supplier Device Package: DO-7
auf Bestellung 444 Stücke
Lieferzeit 21-28 Tag (e)
1N977B 1N977B 1N957B(-1)-1N992B(-1),e3.pdf Microsemi Corporation Description: DIODE ZENER 47V 500MW DO7
Current - Reverse Leakage @ Vr: 5µA @ 35.8V
Impedance (Max) (Zzt): 105 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 47V
Part Status: Active
Packaging: Bulk
Supplier Device Package: DO-7
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N978B 1N978B 1N957B(-1)-1N992B(-1),e3.pdf Microsemi Corporation Description: DIODE ZENER 51V 500MW DO7
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 38.8V
Impedance (Max) (Zzt): 125 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 51V
Part Status: Active
Packaging: Bulk
Supplier Device Package: DO-7
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
1N3477 1N3477 Microsemi Corporation Description: DIODE ZENER 2.2V 250MW DO-7
Base Part Number: 1N3477
Supplier Device Package: DO-7
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Power - Max: 250mW
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 2.2V
Tolerance: ±10%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N3477A 1N3477A Microsemi Corporation Description: DIODE ZENER 2.2V 250MW DO-7
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 2.2V
Tolerance: ±5%
Power - Max: 250mW
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Supplier Device Package: DO-7
Base Part Number: 1N3477
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N740A Microsemi Corporation Description: DIODE ZENER 120V 250MW DO35
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 120V
Tolerance: ±5%
Power - Max: 250mW
Impedance (Max) (Zzt): 570 Ohms
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N741 Microsemi Corporation Description: DIODE ZENER 130V 250MW DO35
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 130V
Tolerance: ±10%
Power - Max: 250mW
Impedance (Max) (Zzt): 650 Ohms
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N741A Microsemi Corporation Description: DIODE ZENER 130V 250MW DO35
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 130V
Tolerance: ±5%
Power - Max: 250mW
Impedance (Max) (Zzt): 650 Ohms
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N5806 JAN1N5806 Microsemi Corporation Description: DIODE GEN PURP 150V 2.5A AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 975mV @ 2.5A
Current - Average Rectified (Io): 2.5A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 150V
Reverse Recovery Time (trr): 25ns
auf Bestellung 74 Stücke
Lieferzeit 21-28 Tag (e)
1N5808 Microsemi Corporation Description: DIODE RECT ULT FAST REC B-PKG
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N5618 JANTX1N5618 11061-sd46a-datasheet Microsemi Corporation Description: DIODE GEN PURP 600V 1A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 600V
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
auf Bestellung 166 Stücke
Lieferzeit 21-28 Tag (e)
1N5418US 1N5418US 11075-lds-0231-1-datasheet Microsemi Corporation Description: DIODE GEN PURP 400V 3A D5B
Mounting Type: Surface Mount
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Package / Case: E-MELF
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N5550 11519-lds-0230-datasheet Microsemi Corporation Description: DIODE GEN PURP 200V 5A AXIAL
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 5A
Reverse Recovery Time (trr): 2 µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 87 Stücke - Preis und Lieferfrist anzeigen
JANTXV1N5415 124360-lds-0231-datasheet Microsemi Corporation Description: DIODE GEN PURP 50V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Average Rectified (Io): 3A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6626 1N6626 10973-sa7-57-datasheet Microsemi Corporation Description: DIODE GEN PURP 220V 1.75A AXIAL
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 2µA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Current - Average Rectified (Io): 1.75A
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5420US 11075-lds-0231-1-datasheet Microsemi Corporation Description: DIODE GEN PURP 600V 3A D5B
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Package / Case: E-MELF
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 400ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N5419 JANTX1N5419 124360-lds-0231-datasheet Microsemi Corporation Description: DIODE GEN PURP 500V 3A AXIAL
Mounting Type: Through Hole
Package / Case: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Current - Reverse Leakage @ Vr: 1µA @ 500V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 500V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N5554 11519-lds-0230-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 3A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A
Current - Average Rectified (Io): 3A
Package / Case: B, Axial
Mounting Type: Through Hole
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10SCD120K APT10SCD120K Microsemi Corporation Description: DIODE SCHOTTKY 1.2KV 10A TO220
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-220
Package / Case: TO-220-2
Mounting Type: Through Hole
auf Bestellung 690 Stücke
Lieferzeit 21-28 Tag (e)
1N6626US 1N6626US 11069-sd53a-datasheet Microsemi Corporation Description: DIODE GEN PURP 220V 1.75A A-MELF
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Current - Average Rectified (Io): 1.75A
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 220V
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-MELF
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 2µA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 22 Stücke - Preis und Lieferfrist anzeigen
1N3643 10953-lds-0266-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 250MA AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Package / Case: S, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
Current - Average Rectified (Io): 250mA
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N5416US JAN1N5416US 11075-lds-0231-1-datasheet Microsemi Corporation Description: DIODE GEN PURP 100V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6623 1N6623 10972-sa7-55-datasheet Microsemi Corporation Description: DIODE GEN PURP 880V 1A AXIAL
Mounting Type: Through Hole
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 500nA @ 880V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 880V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N4944 129281-lds-0295-datasheet Microsemi Corporation Description: DIODE GEN PURP 400V 1A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N5550 JANTXV1N5550 11519-lds-0230-datasheet Microsemi Corporation Description: DIODE GEN PURP 200V 5A AXIAL
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: B, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 200V
Packaging: Bulk
auf Bestellung 3 Stücke
Lieferzeit 21-28 Tag (e)
JANTXV1N5417 JANTXV1N5417 124360-lds-0231-datasheet Microsemi Corporation Description: DIODE GEN PURP 200V 3A AXIAL
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: B, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N5418 JANTXV1N5418 124360-lds-0231-datasheet Microsemi Corporation Description: DIODE GEN PURP 400V 3A AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: B, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
auf Bestellung 66 Stücke
Lieferzeit 21-28 Tag (e)
JANTX1N6620 JANTX1N6620 10972-sa7-55-datasheet Microsemi Corporation Description: DIODE GEN PURP 220V 2A AXIAL
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: Axial
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N4249 JANTXV1N4249 123513-lds-0191-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 1A AXIAL
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 5µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10SCD120B APT10SCD120B 125385-apt10scd120b-b-datasheet Microsemi Corporation Description: DIODE SCHOTTKY 1.2KV 36A TO247
Mounting Type: Through Hole
Capacitance @ Vr, F: 600pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io): 36A (DC)
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-247-2
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30 Stücke - Preis und Lieferfrist anzeigen
1N5807US 1N5807US 124792-lds-0168-1-datasheet Microsemi Corporation Description: DIODE GEN PURP 50V 3A B-MELF
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6627 1N6627 10973-sa7-57-datasheet Microsemi Corporation Description: DIODE GEN PURP 440V 1.75A AXIAL
Current - Reverse Leakage @ Vr: 2µA @ 440V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Current - Average Rectified (Io): 1.75A
Voltage - DC Reverse (Vr) (Max): 440V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Mounting Type: Through Hole
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6621US 11068-sd52a-datasheet Microsemi Corporation Description: DIODE GEN PURP 440V 1.2A A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-MELF
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 440V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 440V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
auf Bestellung 14 Stücke
Lieferzeit 21-28 Tag (e)
1N3645 10953-lds-0266-datasheet Microsemi Corporation Description: DIODE GEN PURP 1.4KV 250MA AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Package / Case: S, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
Current - Average Rectified (Io): 250mA
Voltage - DC Reverse (Vr) (Max): 1400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N5415US 11075-lds-0231-1-datasheet Microsemi Corporation Description: DIODE GEN PURP 50V 3A D5B
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6622US 11068-sd52a-datasheet Microsemi Corporation Description: DIODE GEN PURP 660V 1.2A A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-MELF
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500nA @ 660V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 660V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 335 Stücke - Preis und Lieferfrist anzeigen
1N6627US 1N6627US 11069-sd53a-datasheet Microsemi Corporation Description: DIODE GEN PURP 440V 1.75A A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-MELF
Package / Case: SQ-MELF, A
Current - Reverse Leakage @ Vr: 2µA @ 440V
Mounting Type: Surface Mount
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Current - Average Rectified (Io): 1.75A
Voltage - DC Reverse (Vr) (Max): 440V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6620 10972-sa7-55-datasheet Microsemi Corporation Description: DIODE GEN PURP 220V 1.2A AXIAL
Package / Case: A, Axial
Mounting Type: Through Hole
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Reverse Leakage @ Vr: 500nA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N5418US 11075-lds-0231-1-datasheet Microsemi Corporation Description: DIODE GEN PURP 400V 3A D5B
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 2µA @ 400V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6626 10973-sa7-57-datasheet Microsemi Corporation Description: DIODE GEN PURP 220V 1.75A AXIAL
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: E, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 2µA @ 220V
Reverse Recovery Time (trr): 30ns
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Current - Average Rectified (Io): 1.75A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6625 1N6625 10972-sa7-55-datasheet Microsemi Corporation Description: DIODE GEN PURP 1.1KV 1A AXIAL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 1100V
Reverse Recovery Time (trr): 60ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N5420 JAN1N5420 124360-lds-0231-datasheet Microsemi Corporation Description: DIODE GEN PURP 600V 3A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Package / Case: B, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 400ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N5554 11519-lds-0230-datasheet Microsemi Corporation Description: DIODE GEN PURP 1KV 5A AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 5A
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
auf Bestellung 100 Stücke
Lieferzeit 21-28 Tag (e)
2+ 18.95 EUR
JANTXV1N5550US 10966-sa7-43-datasheet Microsemi Corporation Description: DIODE GEN PURP 200V 5A D5B
Supplier Device Package: D-5B
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Current - Average Rectified (Io): 5A
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6629 1N6629 10973-sa7-57-datasheet Microsemi Corporation Description: DIODE GEN PURP 880V 1.4A AXIAL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 2µA @ 880V
Reverse Recovery Time (trr): 50ns
Current - Average Rectified (Io): 1.4A
Voltage - DC Reverse (Vr) (Max): 880V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N5416US 11075-lds-0231-1-datasheet Microsemi Corporation Description: DIODE GEN PURP 100V 3A D5B
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6620US 11068-sd52a-datasheet Microsemi Corporation Description: DIODE GEN PURP 220V 2A D5A
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Current - Reverse Leakage @ Vr: 500nA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N3645 10953-lds-0266-datasheet Microsemi Corporation Description: DIODE GEN PURP 1.4KV 250MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Package / Case: S, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 1400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
Current - Average Rectified (Io): 250mA
Voltage - DC Reverse (Vr) (Max): 1400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6627 JANTX1N6627 10973-sa7-57-datasheet Microsemi Corporation Description: DIODE GEN PURP 440V 1.75A AXIAL
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 2µA @ 440V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Current - Average Rectified (Io): 1.75A
Voltage - DC Reverse (Vr) (Max): 440V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Mounting Type: Through Hole
Package / Case: E, Axial
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6621 10972-sa7-55-datasheet Microsemi Corporation Description: DIODE GEN PURP 440V 1.2A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 440V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 440V
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6623 10972-sa7-55-datasheet Microsemi Corporation Description: DIODE GEN PURP 880V 1A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 880V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 880V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N5420 124360-lds-0231-datasheet Microsemi Corporation Description: DIODE GEN PURP 600V 3A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600V
Supplier Device Package: B, Axial
Package / Case: B, Axial
Mounting Type: Through Hole
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 400ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6628US 1N6628US 11069-sd53a-datasheet Microsemi Corporation Description: DIODE GEN PURP 660V 1.75A A-MELF
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 660V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 660V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
auf Bestellung 75 Stücke
Lieferzeit 21-28 Tag (e)
JANTX1N6621US JANTX1N6621US 11068-sd52a-datasheet Microsemi Corporation Description: DIODE GEN PURP 440V 2A D5A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 440V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 440V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 62 Stücke - Preis und Lieferfrist anzeigen
JANTXV1N6622 JANTXV1N6622 10972-sa7-55-datasheet Microsemi Corporation Description: DIODE GEN PURP 660V 1.2A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Voltage - DC Reverse (Vr) (Max): 660V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500nA @ 660V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
auf Bestellung 43 Stücke
Lieferzeit 21-28 Tag (e)
1N6630 1N6630 10973-sa7-57-datasheet Microsemi Corporation Description: DIODE GEN PURP 990V 1.4A AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Current - Average Rectified (Io): 1.4A
Voltage - DC Reverse (Vr) (Max): 990V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 2µA @ 990V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6624 10972-sa7-55-datasheet Microsemi Corporation Description: DIODE GEN PURP 990V 1A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 990V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 500nA @ 990V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6628 1N6628 10973-sa7-57-datasheet Microsemi Corporation Description: DIODE GEN PURP 600V 1.75A AXIAL
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 2µA @ 600V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.75A
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Base Part Number: 1N6628
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-PAK
Package / Case: A, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N3646 10953-lds-0266-datasheet Microsemi Corporation Description: DIODE GP 1.75KV 250MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Package / Case: S, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 1750V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
Current - Average Rectified (Io): 250mA
Voltage - DC Reverse (Vr) (Max): 1750V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6623 10972-sa7-55-datasheet Microsemi Corporation Description: DIODE GEN PURP 880V 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 880V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 500nA @ 880V
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6631US 11069-sd53a-datasheet Microsemi Corporation Description: DIODE GEN PURP 1.1KV 1.4A A-MELF
Voltage - DC Reverse (Vr) (Max): 1100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 4µA @ 1100V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Current - Average Rectified (Io): 1.4A
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-MELF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6630US 1N6626US-1N6631US.pdf Microsemi Corporation Description: DIODE GEN PURP 900V 1.4A D5B
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5B
Package / Case: E-MELF
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 4µA @ 100V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Current - Average Rectified (Io): 1.4A
Voltage - DC Reverse (Vr) (Max): 900V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6628 10973-sa7-57-datasheet Microsemi Corporation Description: DIODE GEN PURP 660V 1.75A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 660V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 660V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: E, Axial
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N5420US 11075-lds-0231-1-datasheet Microsemi Corporation Description: DIODE GEN PURP 600V 3A D5B
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 400ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6624 10972-sa7-55-datasheet Microsemi Corporation Description: DIODE GEN PURP 990V 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 990V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 500nA @ 990V
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6625US 1N6625US 11068-sd52a-datasheet Microsemi Corporation Description: DIODE GEN PURP 1.1KV 1A A-MELF
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 1100V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N5420US 11075-lds-0231-1-datasheet Microsemi Corporation Description: DIODE GEN PURP 600V 3A D5B
Reverse Recovery Time (trr): 400 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6631 10973-sa7-57-datasheet Microsemi Corporation Description: DIODE GEN PURP 1.1KV 1.4A AXIAL
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 2µA @ 1000V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: E, Axial
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
Current - Average Rectified (Io): 1.4A
Voltage - DC Reverse (Vr) (Max): 1100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6625US 11068-sd52a-datasheet Microsemi Corporation Description: DIODE GEN PURP 1.1KV 1A D5A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 1100V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6624US 11068-sd52a-datasheet Microsemi Corporation Description: DIODE GEN PURP 900V 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 500nA @ 150V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N5420US 11075-lds-0231-1-datasheet Microsemi Corporation Description: DIODE GEN PURP 600V 3A D5B
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6081 1N6081 10971-sa7-53-datasheet Microsemi Corporation Description: DIODE GEN PURP 150V 2A AXIAL
Current - Reverse Leakage @ Vr: 10µA @ 150V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT15F60B APT15F60B APT15F60B,S.pdf Microsemi Corporation Description: MOSFET N-CH 600V 16A TO247
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Microsemi Corporation
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 430mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2882pF @ 25V
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3
Base Part Number: APT15F60
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT37M100B2 APT37M100B2 6982-apt37m100b2-apt37m100l-datasheet Microsemi Corporation Description: MOSFET N-CH 1000V 37A T-MAX
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
auf Bestellung 26 Stücke
Lieferzeit 21-28 Tag (e)
1+ 56.16 EUR
APT36N90BC3G APT36N90BC3G 122681-apt36n90bc3g-datasheet Microsemi Corporation Description: MOSFET N-CH 900V 36A TO247
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
FET Feature: Super Junction
Input Capacitance (Ciss) (Max) @ Vds: 7463pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 252nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
Rds On (Max) @ Id, Vgs: 120mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Microsemi Corporation
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
APT1201R4BFLLG APT1201R4BFLLG 6605-apt1201r4bfllg-apt1201r4sfllg-datasheet Microsemi Corporation Description: MOSFET N-CH 1200V 9A TO-247
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT8024B2LLG APT8024B2LLG 7276-apt8024b2-lfll-c-pdf Microsemi Corporation Description: MOSFET N-CH 800V 31A T-MAX
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 565W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 240mOhm @ 15.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 7 Stücke
Lieferzeit 21-28 Tag (e)
APT10045B2FLLG APT10045B2FLLG 6549-apt10045b2fllg-apt10045lfllg-datasheet Microsemi Corporation Description: MOSFET N-CH 1000V 23A T-MAX
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT94N65B2C3G APT94N65B2C3G 123472-apt94n65b2c3g-datasheet Microsemi Corporation Description: MOSFET N-CH 650V 94A T-MAX
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 833W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13940pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 580nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.8mA
Rds On (Max) @ Id, Vgs: 35mOhm @ 47A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10035B2FLLG APT10035B2FLLG 6545-apt10035b2fllg-apt10035lfllg-datasheet Microsemi Corporation Description: MOSFET N-CH 1000V 28A T-MAX
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 370mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
Power Dissipation (Max): 690W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10035B2LLG APT10035B2LLG 123943-apt10035b2-lll-g-c-pdf Microsemi Corporation Description: MOSFET N-CH 1000V 28A T-MAX
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
Power Dissipation (Max): 690W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6316D 10924-lds-0193-datasheet Microsemi Corporation Description: VOLTAGE REGULATOR
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: B, Axial
Power - Max: 500mW
Tolerance: ±1%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N742 Microsemi Corporation Description: DIODE ZENER 150V 250MW DO35
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 150V
Tolerance: ±10%
Power - Max: 250mW
Impedance (Max) (Zzt): 860 Ohms
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N742A Microsemi Corporation Description: DIODE ZENER 150V 250MW DO35
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 150V
Tolerance: ±5%
Power - Max: 250mW
Impedance (Max) (Zzt): 860 Ohms
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N744 Microsemi Corporation Description: DIODE ZENER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N744A Microsemi Corporation Description: DIODE ZENER
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N963A 1N963A 1N957B(-1)-1N992B(-1),e3.pdf Microsemi Corporation Description: DIODE ZENER 12V 500MW DO7
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 9.1V
Impedance (Max) (Zzt): 11.5 Ohms
Power - Max: 500mW
Tolerance: ±10%
Voltage - Zener (Nom) (Vz): 12V
Part Status: Active
Packaging: Bulk
Supplier Device Package: DO-7
Package / Case: DO-204AA, DO-7, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N968A 1N968A 1N957B(-1)-1N992B(-1),e3.pdf Microsemi Corporation Description: DIODE ZENER 20V 500MW DO7
Supplier Device Package: DO-7
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 15.2V
Impedance (Max) (Zzt): 25 Ohms
Power - Max: 500mW
Tolerance: ±10%
Voltage - Zener (Nom) (Vz): 20V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N978A 1N978A 1N957B(-1)-1N992B(-1),e3.pdf Microsemi Corporation Description: DIODE ZENER 51V 500MW DO7
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 51V
Tolerance: ±10%
Power - Max: 500mW
Impedance (Max) (Zzt): 125 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 38.8V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Supplier Device Package: DO-7
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5923/TR13 1PMT5923/TR13 1PMT5913B-1PMT5956B.pdf Microsemi Corporation Description: DIODE ZENER 8.2V 3W DO216AA
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 6.5V
Impedance (Max) (Zzt): 3.5 Ohms
Power - Max: 3W
Tolerance: ±20%
Voltage - Zener (Nom) (Vz): 8.2V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: 1PMT5923
Supplier Device Package: DO-216AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5923A/TR13 1PMT5923A/TR13 1PMT5913B-1PMT5956B.pdf Microsemi Corporation Description: DIODE ZENER 8.2V 3W DO216AA
Base Part Number: 1PMT5923
Supplier Device Package: DO-216AA
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 6.5V
Impedance (Max) (Zzt): 3.5 Ohms
Power - Max: 3W
Tolerance: ±10%
Voltage - Zener (Nom) (Vz): 8.2V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5923B/TR13 1PMT5923B/TR13 1PMT5913B-1PMT5956B.pdf Microsemi Corporation Description: DIODE ZENER 8.2V 3W DO216AA
Base Part Number: 1PMT5923
Supplier Device Package: DO-216AA
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5µA @ 6.5V
Impedance (Max) (Zzt): 3.5 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 8.2V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5931/TR13 1PMT5931/TR13 1PMT5913B-1PMT5956B.pdf Microsemi Corporation Description: DIODE ZENER 18V 3W DO216AA
Base Part Number: 1PMT5931
Supplier Device Package: DO-216AA
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 13.7V
Impedance (Max) (Zzt): 12 Ohms
Power - Max: 3W
Tolerance: ±20%
Voltage - Zener (Nom) (Vz): 18V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5931A/TR13 1PMT5931A/TR13 1PMT5913B-1PMT5956B.pdf Microsemi Corporation Description: DIODE ZENER 18V 3W DO216AA
Supplier Device Package: DO-216AA
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 13.7V
Impedance (Max) (Zzt): 12 Ohms
Power - Max: 3W
Tolerance: ±10%
Voltage - Zener (Nom) (Vz): 18V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5931B/TR13 1PMT5931B/TR13 1PMT5913B-1PMT5956B.pdf Microsemi Corporation Description: DIODE ZENER 18V 3W DO216AA
Current - Reverse Leakage @ Vr: 1µA @ 13.7V
Impedance (Max) (Zzt): 12 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 18V
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: 1PMT5931
Supplier Device Package: DO-216AA
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5939A/TR13 1PMT5939A/TR13 1PMT5913B-1PMT5956B.pdf Microsemi Corporation Description: DIODE ZENER 39V 3W DO216AA
Base Part Number: 1PMT5939
Supplier Device Package: DO-216AA
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 29.7V
Impedance (Max) (Zzt): 45 Ohms
Power - Max: 3W
Tolerance: ±10%
Voltage - Zener (Nom) (Vz): 39V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5949B/TR13 1PMT5949B/TR13 1PMT5913B-1PMT5956B.pdf Microsemi Corporation Description: DIODE ZENER 100V 3W DO216AA
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 76V
Impedance (Max) (Zzt): 250 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 100V
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: 1PMT5949
Supplier Device Package: DO-216AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5950/TR13 1PMT5950/TR13 1PMT5913B-1PMT5956B.pdf Microsemi Corporation Description: DIODE ZENER 110V 3W DO216AA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 110V
Tolerance: ±20%
Power - Max: 3W
Impedance (Max) (Zzt): 300 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 83.6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: DO-216AA
Base Part Number: 1PMT5950
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SMBG5948C/TR13 10867-sa3-41-datasheet
Hersteller: Microsemi Corporation
Description: DIODE ZENER 91V 2W SMBG
Current - Reverse Leakage @ Vr: 1µA @ 69.2V
Impedance (Max) (Zzt): 200 Ohms
Power - Max: 2W
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 91V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SMBG (DO-215AA)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N968B 1N957B(-1)-1N992B(-1),e3.pdf
1N968B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 20V 500MW DO7
Supplier Device Package: DO-7
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 15.2V
Impedance (Max) (Zzt): 25 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 20V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 194820 Stücke - Preis und Lieferfrist anzeigen
1N975B 10900-sa5-11-datasheet
1N975B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 39V 500MW DO7
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 29.7V
Impedance (Max) (Zzt): 80 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 39V
Part Status: Active
Packaging: Bulk
Supplier Device Package: DO-7
auf Bestellung 444 Stücke
Lieferzeit 21-28 Tag (e)
1N977B 1N957B(-1)-1N992B(-1),e3.pdf
1N977B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 47V 500MW DO7
Current - Reverse Leakage @ Vr: 5µA @ 35.8V
Impedance (Max) (Zzt): 105 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 47V
Part Status: Active
Packaging: Bulk
Supplier Device Package: DO-7
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N978B 1N957B(-1)-1N992B(-1),e3.pdf
1N978B
Hersteller: Microsemi Corporation
Description: DIODE ZENER 51V 500MW DO7
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 38.8V
Impedance (Max) (Zzt): 125 Ohms
Power - Max: 500mW
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 51V
Part Status: Active
Packaging: Bulk
Supplier Device Package: DO-7
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 33000 Stücke - Preis und Lieferfrist anzeigen
1N3477
1N3477
Hersteller: Microsemi Corporation
Description: DIODE ZENER 2.2V 250MW DO-7
Base Part Number: 1N3477
Supplier Device Package: DO-7
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Power - Max: 250mW
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 2.2V
Tolerance: ±10%
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N3477A
1N3477A
Hersteller: Microsemi Corporation
Description: DIODE ZENER 2.2V 250MW DO-7
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 2.2V
Tolerance: ±5%
Power - Max: 250mW
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Supplier Device Package: DO-7
Base Part Number: 1N3477
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N740A
Hersteller: Microsemi Corporation
Description: DIODE ZENER 120V 250MW DO35
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 120V
Tolerance: ±5%
Power - Max: 250mW
Impedance (Max) (Zzt): 570 Ohms
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N741
Hersteller: Microsemi Corporation
Description: DIODE ZENER 130V 250MW DO35
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 130V
Tolerance: ±10%
Power - Max: 250mW
Impedance (Max) (Zzt): 650 Ohms
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N741A
Hersteller: Microsemi Corporation
Description: DIODE ZENER 130V 250MW DO35
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 130V
Tolerance: ±5%
Power - Max: 250mW
Impedance (Max) (Zzt): 650 Ohms
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N5806
JAN1N5806
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 150V 2.5A AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 975mV @ 2.5A
Current - Average Rectified (Io): 2.5A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 150V
Reverse Recovery Time (trr): 25ns
auf Bestellung 74 Stücke
Lieferzeit 21-28 Tag (e)
1N5808
Hersteller: Microsemi Corporation
Description: DIODE RECT ULT FAST REC B-PKG
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N5618 11061-sd46a-datasheet
JANTX1N5618
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 1A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 500nA @ 600V
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
auf Bestellung 166 Stücke
Lieferzeit 21-28 Tag (e)
1N5418US 11075-lds-0231-1-datasheet
1N5418US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 3A D5B
Mounting Type: Surface Mount
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Package / Case: E-MELF
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N5550 11519-lds-0230-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 200V 5A AXIAL
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 5A
Reverse Recovery Time (trr): 2 µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 87 Stücke - Preis und Lieferfrist anzeigen
JANTXV1N5415 124360-lds-0231-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 50V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Diode Type: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Average Rectified (Io): 3A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6626 10973-sa7-57-datasheet
1N6626
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 220V 1.75A AXIAL
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 2µA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Current - Average Rectified (Io): 1.75A
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N5420US 11075-lds-0231-1-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 3A D5B
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Package / Case: E-MELF
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 400ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N5419 124360-lds-0231-datasheet
JANTX1N5419
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 500V 3A AXIAL
Mounting Type: Through Hole
Package / Case: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Current - Reverse Leakage @ Vr: 1µA @ 500V
Reverse Recovery Time (trr): 250ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 500V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N5554 11519-lds-0230-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 3A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A
Current - Average Rectified (Io): 3A
Package / Case: B, Axial
Mounting Type: Through Hole
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10SCD120K
APT10SCD120K
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 1.2KV 10A TO220
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 10A
Current - Average Rectified (Io): 10A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-220
Package / Case: TO-220-2
Mounting Type: Through Hole
auf Bestellung 690 Stücke
Lieferzeit 21-28 Tag (e)
1N6626US 11069-sd53a-datasheet
1N6626US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 220V 1.75A A-MELF
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Current - Average Rectified (Io): 1.75A
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 220V
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-MELF
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 2µA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 22 Stücke - Preis und Lieferfrist anzeigen
1N3643 10953-lds-0266-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 250MA AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Package / Case: S, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
Current - Average Rectified (Io): 250mA
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N5416US 11075-lds-0231-1-datasheet
JAN1N5416US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 100V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6623 10972-sa7-55-datasheet
1N6623
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 880V 1A AXIAL
Mounting Type: Through Hole
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 500nA @ 880V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 880V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N4944 129281-lds-0295-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 1A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N5550 11519-lds-0230-datasheet
JANTXV1N5550
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 200V 5A AXIAL
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Current - Average Rectified (Io): 5A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: B, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 200V
Packaging: Bulk
auf Bestellung 3 Stücke
Lieferzeit 21-28 Tag (e)
JANTXV1N5417 124360-lds-0231-datasheet
JANTXV1N5417
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 200V 3A AXIAL
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: B, Axial
Mounting Type: Through Hole
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N5418 124360-lds-0231-datasheet
JANTXV1N5418
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 3A AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: B, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 400V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
auf Bestellung 66 Stücke
Lieferzeit 21-28 Tag (e)
JANTX1N6620 10972-sa7-55-datasheet
JANTX1N6620
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 220V 2A AXIAL
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: Axial
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N4249 123513-lds-0191-datasheet
JANTXV1N4249
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 1A AXIAL
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Reverse Recovery Time (trr): 5µs
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10SCD120B 125385-apt10scd120b-b-datasheet
APT10SCD120B
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 1.2KV 36A TO247
Mounting Type: Through Hole
Capacitance @ Vr, F: 600pF @ 0V, 1MHz
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io): 36A (DC)
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Part Status: Obsolete
Packaging: Tube
Package / Case: TO-247-2
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 30 Stücke - Preis und Lieferfrist anzeigen
1N5807US 124792-lds-0168-1-datasheet
1N5807US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 50V 3A B-MELF
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 875mV @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6627 10973-sa7-57-datasheet
1N6627
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 440V 1.75A AXIAL
Current - Reverse Leakage @ Vr: 2µA @ 440V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Current - Average Rectified (Io): 1.75A
Voltage - DC Reverse (Vr) (Max): 440V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Mounting Type: Through Hole
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6621US 11068-sd52a-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 440V 1.2A A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-MELF
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 440V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 440V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
auf Bestellung 14 Stücke
Lieferzeit 21-28 Tag (e)
1N3645 10953-lds-0266-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1.4KV 250MA AXIAL
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Package / Case: S, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100µA @ 1400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
Current - Average Rectified (Io): 250mA
Voltage - DC Reverse (Vr) (Max): 1400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N5415US 11075-lds-0231-1-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 50V 3A D5B
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6622US 11068-sd52a-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 660V 1.2A A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-MELF
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500nA @ 660V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 660V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 335 Stücke - Preis und Lieferfrist anzeigen
1N6627US 11069-sd53a-datasheet
1N6627US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 440V 1.75A A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-MELF
Package / Case: SQ-MELF, A
Current - Reverse Leakage @ Vr: 2µA @ 440V
Mounting Type: Surface Mount
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Current - Average Rectified (Io): 1.75A
Voltage - DC Reverse (Vr) (Max): 440V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6620 10972-sa7-55-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 220V 1.2A AXIAL
Package / Case: A, Axial
Mounting Type: Through Hole
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Reverse Leakage @ Vr: 500nA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io): 1.2A
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N5418US 11075-lds-0231-1-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 400V 3A D5B
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 2µA @ 400V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6626 10973-sa7-57-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 220V 1.75A AXIAL
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: E, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 2µA @ 220V
Reverse Recovery Time (trr): 30ns
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Current - Average Rectified (Io): 1.75A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6625 10972-sa7-55-datasheet
1N6625
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1.1KV 1A AXIAL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 1100V
Reverse Recovery Time (trr): 60ns
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N5420 124360-lds-0231-datasheet
JAN1N5420
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 3A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Package / Case: B, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 400ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N5554 11519-lds-0230-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1KV 5A AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Current - Average Rectified (Io): 5A
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Diode Type: Standard
auf Bestellung 100 Stücke
Lieferzeit 21-28 Tag (e)
2+ 18.95 EUR
JANTXV1N5550US 10966-sa7-43-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 200V 5A D5B
Supplier Device Package: D-5B
Voltage - DC Reverse (Vr) (Max): 200V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 200V
Reverse Recovery Time (trr): 2µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 9A
Current - Average Rectified (Io): 5A
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6629 10973-sa7-57-datasheet
1N6629
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 880V 1.4A AXIAL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 2µA @ 880V
Reverse Recovery Time (trr): 50ns
Current - Average Rectified (Io): 1.4A
Voltage - DC Reverse (Vr) (Max): 880V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N5416US 11075-lds-0231-1-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 100V 3A D5B
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6620US 11068-sd52a-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 220V 2A D5A
Current - Average Rectified (Io): 2A
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Voltage - DC Reverse (Vr) (Max): 220V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Current - Reverse Leakage @ Vr: 500nA @ 220V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N3645 10953-lds-0266-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1.4KV 250MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Package / Case: S, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 1400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
Current - Average Rectified (Io): 250mA
Voltage - DC Reverse (Vr) (Max): 1400V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6627 10973-sa7-57-datasheet
JANTX1N6627
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 440V 1.75A AXIAL
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 2µA @ 440V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Current - Average Rectified (Io): 1.75A
Voltage - DC Reverse (Vr) (Max): 440V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Mounting Type: Through Hole
Package / Case: E, Axial
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6621 10972-sa7-55-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 440V 1.2A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 440V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 500nA @ 440V
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6623 10972-sa7-55-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 880V 1A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 880V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 880V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N5420 124360-lds-0231-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 3A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600V
Supplier Device Package: B, Axial
Package / Case: B, Axial
Mounting Type: Through Hole
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 400ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6628US 11069-sd53a-datasheet
1N6628US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 660V 1.75A A-MELF
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 660V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 660V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
auf Bestellung 75 Stücke
Lieferzeit 21-28 Tag (e)
JANTX1N6621US 11068-sd52a-datasheet
JANTX1N6621US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 440V 2A D5A
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 440V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 440V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 62 Stücke - Preis und Lieferfrist anzeigen
JANTXV1N6622 10972-sa7-55-datasheet
JANTXV1N6622
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 660V 1.2A AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Voltage - DC Reverse (Vr) (Max): 660V
Diode Type: Standard
Part Status: Discontinued at Digi-Key
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 500nA @ 660V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.2A
Current - Average Rectified (Io): 1.2A
auf Bestellung 43 Stücke
Lieferzeit 21-28 Tag (e)
1N6630 10973-sa7-57-datasheet
1N6630
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 990V 1.4A AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Current - Average Rectified (Io): 1.4A
Voltage - DC Reverse (Vr) (Max): 990V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Operating Temperature - Junction: -65°C ~ 150°C
Package / Case: A, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 2µA @ 990V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6624 10972-sa7-55-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 990V 1A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 990V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 500nA @ 990V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6628 10973-sa7-57-datasheet
1N6628
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 1.75A AXIAL
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 2µA @ 600V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.75A
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Base Part Number: 1N6628
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-PAK
Package / Case: A, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N3646 10953-lds-0266-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GP 1.75KV 250MA AXIAL
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: S, Axial
Package / Case: S, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 5µA @ 1750V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 5V @ 250mA
Current - Average Rectified (Io): 250mA
Voltage - DC Reverse (Vr) (Max): 1750V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6623 10972-sa7-55-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 880V 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 880V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 500nA @ 880V
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6631US 11069-sd53a-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1.1KV 1.4A A-MELF
Voltage - DC Reverse (Vr) (Max): 1100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 4µA @ 1100V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Current - Average Rectified (Io): 1.4A
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: A-MELF
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6630US 1N6626US-1N6631US.pdf
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 900V 1.4A D5B
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5B
Package / Case: E-MELF
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 4µA @ 100V
Reverse Recovery Time (trr): 50ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Current - Average Rectified (Io): 1.4A
Voltage - DC Reverse (Vr) (Max): 900V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6628 10973-sa7-57-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 660V 1.75A AXIAL
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 660V
Current - Average Rectified (Io): 1.75A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 2µA @ 660V
Capacitance @ Vr, F: 40pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: E, Axial
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N5420US 11075-lds-0231-1-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 3A D5B
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 1µA @ 600V
Reverse Recovery Time (trr): 400ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6624 10972-sa7-55-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 990V 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 990V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 500nA @ 990V
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A-PAK
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6625US 11068-sd52a-datasheet
1N6625US
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1.1KV 1A A-MELF
Package / Case: SQ-MELF, A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 150°C
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 1100V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N5420US 11075-lds-0231-1-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 3A D5B
Reverse Recovery Time (trr): 400 ns
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6631 10973-sa7-57-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1.1KV 1.4A AXIAL
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 2µA @ 1000V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 175°C
Package / Case: E, Axial
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 1A
Current - Average Rectified (Io): 1.4A
Voltage - DC Reverse (Vr) (Max): 1100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTX1N6625US 11068-sd52a-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 1.1KV 1A D5A
Voltage - Forward (Vf) (Max) @ If: 1.75V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1100V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 1100V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N6624US 11068-sd52a-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 900V 1A D5A
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 500nA @ 150V
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 150°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JANTXV1N5420US 11075-lds-0231-1-datasheet
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 600V 3A D5B
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 1µA @ 600V
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Notification: QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N6081 10971-sa7-53-datasheet
1N6081
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 150V 2A AXIAL
Current - Reverse Leakage @ Vr: 10µA @ 150V
Reverse Recovery Time (trr): 30ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 37.7A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Standard
Part Status: Active
Packaging: Bulk
Mounting Type: Through Hole
Package / Case: A, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT15F60B APT15F60B,S.pdf
APT15F60B
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 16A TO247
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Microsemi Corporation
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 430mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2882pF @ 25V
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3
Base Part Number: APT15F60
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT37M100B2 6982-apt37m100b2-apt37m100l-datasheet
APT37M100B2
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 37A T-MAX
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: T-MAX™ [B2]
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 9835 pF @ 25 V
auf Bestellung 26 Stücke
Lieferzeit 21-28 Tag (e)
1+ 56.16 EUR
APT36N90BC3G 122681-apt36n90bc3g-datasheet
APT36N90BC3G
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 900V 36A TO247
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
FET Feature: Super Junction
Input Capacitance (Ciss) (Max) @ Vds: 7463pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 252nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 2.9mA
Rds On (Max) @ Id, Vgs: 120mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Drain to Source Voltage (Vdss): 900V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Microsemi Corporation
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Mounting Type: Through Hole
auf Bestellung 1 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5 Stücke - Preis und Lieferfrist anzeigen
APT1201R4BFLLG 6605-apt1201r4bfllg-apt1201r4sfllg-datasheet
APT1201R4BFLLG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1200V 9A TO-247
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 [B]
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT8024B2LLG 7276-apt8024b2-lfll-c-pdf
APT8024B2LLG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 800V 31A T-MAX
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 565W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4670pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 240mOhm @ 15.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
auf Bestellung 7 Stücke
Lieferzeit 21-28 Tag (e)
APT10045B2FLLG 6549-apt10045b2fllg-apt10045lfllg-datasheet
APT10045B2FLLG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 23A T-MAX
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 460mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT94N65B2C3G 123472-apt94n65b2c3g-datasheet
APT94N65B2C3G
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 650V 94A T-MAX
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX™ [B2]
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 833W (Tc)
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13940pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 580nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 5.8mA
Rds On (Max) @ Id, Vgs: 35mOhm @ 47A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10035B2FLLG 6545-apt10035b2fllg-apt10035lfllg-datasheet
APT10035B2FLLG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 28A T-MAX
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 370mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
Power Dissipation (Max): 690W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
APT10035B2LLG 123943-apt10035b2-lll-g-c-pdf
APT10035B2LLG
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 1000V 28A T-MAX
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
Power Dissipation (Max): 690W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
JAN1N6316D 10924-lds-0193-datasheet
Hersteller: Microsemi Corporation
Description: VOLTAGE REGULATOR
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: B, Axial
Power - Max: 500mW
Tolerance: ±1%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N742
Hersteller: Microsemi Corporation
Description: DIODE ZENER 150V 250MW DO35
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 150V
Tolerance: ±10%
Power - Max: 250mW
Impedance (Max) (Zzt): 860 Ohms
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N742A
Hersteller: Microsemi Corporation
Description: DIODE ZENER 150V 250MW DO35
Packaging: Bulk
Part Status: Active
Voltage - Zener (Nom) (Vz): 150V
Tolerance: ±5%
Power - Max: 250mW
Impedance (Max) (Zzt): 860 Ohms
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N744
Hersteller: Microsemi Corporation
Description: DIODE ZENER
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N744A
Hersteller: Microsemi Corporation
Description: DIODE ZENER
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N963A 1N957B(-1)-1N992B(-1),e3.pdf
1N963A
Hersteller: Microsemi Corporation
Description: DIODE ZENER 12V 500MW DO7
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 9.1V
Impedance (Max) (Zzt): 11.5 Ohms
Power - Max: 500mW
Tolerance: ±10%
Voltage - Zener (Nom) (Vz): 12V
Part Status: Active
Packaging: Bulk
Supplier Device Package: DO-7
Package / Case: DO-204AA, DO-7, Axial
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N968A 1N957B(-1)-1N992B(-1),e3.pdf
1N968A
Hersteller: Microsemi Corporation
Description: DIODE ZENER 20V 500MW DO7
Supplier Device Package: DO-7
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 15.2V
Impedance (Max) (Zzt): 25 Ohms
Power - Max: 500mW
Tolerance: ±10%
Voltage - Zener (Nom) (Vz): 20V
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1N978A 1N957B(-1)-1N992B(-1),e3.pdf
1N978A
Hersteller: Microsemi Corporation
Description: DIODE ZENER 51V 500MW DO7
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Voltage - Zener (Nom) (Vz): 51V
Tolerance: ±10%
Power - Max: 500mW
Impedance (Max) (Zzt): 125 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 38.8V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: DO-204AA, DO-7, Axial
Supplier Device Package: DO-7
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5923/TR13 1PMT5913B-1PMT5956B.pdf
1PMT5923/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 8.2V 3W DO216AA
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 6.5V
Impedance (Max) (Zzt): 3.5 Ohms
Power - Max: 3W
Tolerance: ±20%
Voltage - Zener (Nom) (Vz): 8.2V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: 1PMT5923
Supplier Device Package: DO-216AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5923A/TR13 1PMT5913B-1PMT5956B.pdf
1PMT5923A/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 8.2V 3W DO216AA
Base Part Number: 1PMT5923
Supplier Device Package: DO-216AA
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 5µA @ 6.5V
Impedance (Max) (Zzt): 3.5 Ohms
Power - Max: 3W
Tolerance: ±10%
Voltage - Zener (Nom) (Vz): 8.2V
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5923B/TR13 1PMT5913B-1PMT5956B.pdf
1PMT5923B/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 8.2V 3W DO216AA
Base Part Number: 1PMT5923
Supplier Device Package: DO-216AA
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5µA @ 6.5V
Impedance (Max) (Zzt): 3.5 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 8.2V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5931/TR13 1PMT5913B-1PMT5956B.pdf
1PMT5931/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 18V 3W DO216AA
Base Part Number: 1PMT5931
Supplier Device Package: DO-216AA
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 13.7V
Impedance (Max) (Zzt): 12 Ohms
Power - Max: 3W
Tolerance: ±20%
Voltage - Zener (Nom) (Vz): 18V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5931A/TR13 1PMT5913B-1PMT5956B.pdf
1PMT5931A/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 18V 3W DO216AA
Supplier Device Package: DO-216AA
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 13.7V
Impedance (Max) (Zzt): 12 Ohms
Power - Max: 3W
Tolerance: ±10%
Voltage - Zener (Nom) (Vz): 18V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5931B/TR13 1PMT5913B-1PMT5956B.pdf
1PMT5931B/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 18V 3W DO216AA
Current - Reverse Leakage @ Vr: 1µA @ 13.7V
Impedance (Max) (Zzt): 12 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 18V
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: 1PMT5931
Supplier Device Package: DO-216AA
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5939A/TR13 1PMT5913B-1PMT5956B.pdf
1PMT5939A/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 39V 3W DO216AA
Base Part Number: 1PMT5939
Supplier Device Package: DO-216AA
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 29.7V
Impedance (Max) (Zzt): 45 Ohms
Power - Max: 3W
Tolerance: ±10%
Voltage - Zener (Nom) (Vz): 39V
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5949B/TR13 1PMT5913B-1PMT5956B.pdf
1PMT5949B/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 100V 3W DO216AA
Package / Case: DO-216AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Current - Reverse Leakage @ Vr: 1µA @ 76V
Impedance (Max) (Zzt): 250 Ohms
Power - Max: 3W
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 100V
Part Status: Active
Packaging: Tape & Reel (TR)
Base Part Number: 1PMT5949
Supplier Device Package: DO-216AA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
1PMT5950/TR13 1PMT5913B-1PMT5956B.pdf
1PMT5950/TR13
Hersteller: Microsemi Corporation
Description: DIODE ZENER 110V 3W DO216AA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 110V
Tolerance: ±20%
Power - Max: 3W
Impedance (Max) (Zzt): 300 Ohms
Current - Reverse Leakage @ Vr: 1µA @ 83.6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: DO-216AA
Base Part Number: 1PMT5950
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
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