Produkte > NSV
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| NSVT65011MW6T1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSVT65011MW6T1G | onsemi | Description: TRANS 2NPN 65V 100MA SC88/SC70 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSVT65011MW6T1G | ON Semiconductor | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSVT65011MW6T1G | ON Semiconductor | Trans GP BJT NPN 65V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSVT65011MW6T1G | ON Semiconductor | Trans GP BJT NPN 65V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSVT65011MW6T1G | onsemi | Bipolar Transistors - BJT Dual Matched NPN Tra | auf Bestellung 4024 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVT65011MW6T1G | onsemi | Description: TRANS 2NPN 65V 100MA SC88/SC70 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 380mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active | auf Bestellung 1334 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVT65011MW6T1G | ON Semiconductor | Trans GP BJT NPN 65V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVT65011MW6T1G | ON Semiconductor | Trans GP BJT NPN 65V 0.1A 380mW Automotive AEC-Q101 6-Pin SC-88 T/R | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVT807CMTWFTBG | onsemi | Bipolar Transistors - BJT GENERAL PURPOSE TRANSISTOR PNP, 45 V, 500 MA | auf Bestellung 1493 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVT817CMTWFTBG | onsemi | Bipolar Transistors - BJT GENERAL PURPOSE TRANSISTOR NPN, 45 V, 500 MA | auf Bestellung 153970 Stücke: Lieferzeit 199-203 Tag (e) |
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| NSVT846MTWFTBG | ON Semiconductor | General Purpose Transistors NPN Silicon Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSVT846MTWFTBG | onsemi | Bipolar Transistors - BJT DUAL 65V/100MA, NPN & PNP BIPOLAR TRANSISTORS, XDFNW3 | auf Bestellung 13568 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVT846MTWFTBG | ON Semiconductor | General Purpose Transistors NPN Silicon Automotive AEC-Q101 | auf Bestellung 198000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVT846MTWFTBG | onsemi | Description: TRANS NPN 65V 0.1A 3XDFNW Qualification: AEC-Q101 Power - Max: 570 mW Voltage - Collector Emitter Breakdown (Max): 65 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: 3-XDFNW (1x1) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XFDFN Packaging: Bulk | auf Bestellung 201000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVT846MTWFTBG | ON Semiconductor | General Purpose Transistors NPN Silicon Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSVT856MTWFTBG | onsemi | Description: TRANS PNP 65V 0.1A 3XDFNW Qualification: AEC-Q101 Power - Max: 650 mW Voltage - Collector Emitter Breakdown (Max): 65 V Current - Collector (Ic) (Max): 100 mA Grade: Automotive Supplier Device Package: 3-XDFNW (1x1) Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 900mV @ 5mA, 100mA Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XFDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSVT856MTWFTBG | ON Semiconductor | General Purpose Transistors PNP, 65 V, 100 mA NST856MTWFT Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSVT856MTWFTBG | ONSEMI | Description: ONSEMI - NSVT856MTWFTBG - Bipolarer Einzeltransistor (BJT), PNP, 65 V, 100 mA, 650 mW, XDFNW, Oberflächenmontage tariffCode: 85412900 euEccn: NLR rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 220hFE hazardous: false rohsPhthalatesCompliant: YES isCanonical: N Verlustleistung: 650mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: XDFNW Dauerkollektorstrom: 100mA Anzahl der Pins: 3Pin(s) Kollektor-Emitter-Spannung, max.: 65V productTraceability: Yes-Date/Lot Code usEccn: EAR99 Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVT856MTWFTBG | ONSEMI | Description: ONSEMI - NSVT856MTWFTBG - Bipolarer Einzeltransistor (BJT), PNP, 65 V, 100 mA, 650 mW, XDFNW, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 220hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Verlustleistung: 650mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: XDFNW Dauerkollektorstrom: 100mA Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 65V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP usEccn: EAR99 Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVT856MTWFTBG | onsemi | Bipolar Transistors - BJT DUAL 65V/100MA, NPN & PNP BIPOLAR TRANSISTORS, XDFNW3 | auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVT856MTWFTBG | onsemi | Description: TRANS PNP 65V 0.1A 3XDFNW Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: 3-XDFNW (1x1) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 650 mW Qualification: AEC-Q101 | auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVTB60BDW1T1G | onsemi | Description: TRANS PREBIAS 1NPN 1PNP SOT-363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN Pre-Biased, 1 PNP Power - Max: 250mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1865 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVTB60BDW1T1G | onsemi | Digital Transistors PNP GENERAL PURPOSE | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSVTB60BDW1T1G | onsemi | Description: TRANS PREBIAS 1NPN 1PNP SOT-363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN Pre-Biased, 1 PNP Power - Max: 250mW Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSVTB60BDW1T1G | ON Semiconductor | PNP General Purpose and NPN Bias Resistor Transistor Combination Automotive AEC-Q101 | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVTB60BDW1T1G | ON Semiconductor | PNP General Purpose and NPN Bias Resistor Transistor Combination Automotive AEC-Q101 | auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVUMC2NT1G | onsemi | Digital Transistors SS SC88A DUAL BRT TR | auf Bestellung 417 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVUMC2NT1G | onsemi | Description: TRANS PREBIAS 1NPN 1PNP SC-88A Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88A (SC-70-5/SOT-353) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5592 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVUMC2NT1G | onsemi | Description: TRANS PREBIAS 1NPN 1PNP SC-88A Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88A (SC-70-5/SOT-353) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVUMC2NT1G | ON | SOT353 | auf Bestellung 550 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSVUMC2NT1G | ONSEMI | Description: ONSEMI - NSVUMC2NT1G - Bipolarer Transistor, pre-biased/digital, NPN- und PNP-Ergänzung, 50 V, 50 V, 100 mA, 22 kohm tariffCode: 85412900 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Basis-Eingangswiderstand R1: 22kohm isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 22kohm euEccn: NLR Verlustleistung: 150mW Bauform - Transistor: SOT-353 Dauerkollektorstrom: 100mA Anzahl der Pins: 5 Pins Produktpalette: UMC2 Series productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN- und PNP-Ergänzung Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: 50V SVHC: No SVHC (27-Jun-2024) | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVUMC3NT1G | onsemi | Digital Transistors SS SC88A DUAL BRT TR | auf Bestellung 2957 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVUMC3NT1G | onsemi | Description: TRANS NPN/PNP PREBIAS 0.15W SC88 Part Status: Active Supplier Device Package: SC-88A (SC-70-5/SOT-353) Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSVUMC5NT1G | onsemi | Description: TRANS NPN/PNP PREBIAS 0.15W SC88 Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V Resistor - Base (R1): 47kOhms, 4.7kOhms Resistor - Emitter Base (R2): 47kOhms, 10kOhms Supplier Device Package: SC-88A (SC-70-5/SOT-353) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVUMC5NT1G | onsemi | Digital Transistors SMALL SIGNAL BIAS RE | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVUMC5NT1G | ONN | auf Bestellung 2435 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSVUMC5NT1G | onsemi | Description: TRANS NPN/PNP PREBIAS 0.15W SC88 Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V Resistor - Base (R1): 47kOhms, 4.7kOhms Resistor - Emitter Base (R2): 47kOhms, 10kOhms Supplier Device Package: SC-88A (SC-70-5/SOT-353) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVUMC5NT2G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SC88A Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SC-88A (SC-70-5/SOT-353) Resistor - Emitter Base (R2): 47kOhms, 10kOhms Resistor - Base (R1): 47kOhms, 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSVUMC5NT2G | onsemi | Description: TRANS PREBIAS NPN/PNP 50V SC88A Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V Resistor - Base (R1): 47kOhms, 4.7kOhms Resistor - Emitter Base (R2): 47kOhms, 10kOhms Supplier Device Package: SC-88A (SC-70-5/SOT-353) Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSVUMC5NT2G | onsemi | Digital Transistors SS SC88A DUAL BRT TR | auf Bestellung 2550 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVUMZ1NT1G | onsemi | Description: TRANS NPN/PNP 50V 200MA SOT-363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Complementary Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 114MHz, 142MHz Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 12267 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVUMZ1NT1G | onsemi | Bipolar Transistors - BJT SS DUAL GENRL PURPS XSTR | auf Bestellung 9421 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVUMZ1NT1G | onsemi | Description: TRANS NPN/PNP 50V 200MA SOT-363 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: SC-88/SC70-6/SOT-363 Frequency - Transition: 114MHz, 142MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Current - Collector Cutoff (Max): 2µA Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 200mA Power - Max: 250mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 1 NPN, 1 PNP Complementary Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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