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FF02S17SV1-R3000JAE ElectronicsFFC & FPC Connectors 17P Lo-Pro FPC Fine Pitch .3mm
Produkt ist nicht verfügbar
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FF02S25SV1JAE ElectronicsDescription: CONN FPC BOTTOM 25POS 0.30MM R/A
Produkt ist nicht verfügbar
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FF02S25SV1-R3000JAE ElectronicsDescription: CONN FPC BOTTOM 25POS 0.30MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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FF02S27SV1JAE ElectronicsDescription: CONN FPC BOTTOM 27POS 0.30MM R/A
Produkt ist nicht verfügbar
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FF02S27SV1-R3000JAE ElectronicsDescription: CONN FPC BOTTOM 27POS 0.30MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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FF02S29SV1JAE ElectronicsDescription: CONN FPC BOTTOM 29POS 0.30MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 200 Stücke
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FF02S29SV1JAE ElectronicsFFC & FPC Connectors 29P Lo-Pro FPC Fine Pitch .3mm
Produkt ist nicht verfügbar
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FF02S29SV1-R3000JAE ElectronicsDescription: CONN FPC BOTTOM 29POS 0.30MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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FF02S29SV1-R3000JAE ElectronicsFFC & FPC Connectors 29P Lo-Pro FPC Fine Pitch .3mm
Produkt ist nicht verfügbar
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FF02S31SV1JAE ElectronicsDescription: CONN FPC BOTTOM 31POS 0.30MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 200 Stücke
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FF02S31SV1-R3000JAE ElectronicsDescription: CONN FPC BOTTOM 31POS 0.30MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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FF02S33SV1JAE ElectronicsDescription: CONN FPC BOTTOM 33POS 0.30MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
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FF02S33SV1-R3000JAE ElectronicsDescription: CONN FPC BOTTOM 33POS 0.30MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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FF02S35SV1-R3000JAE ElectronicsDescription: CONN FPC BOTTOM 35POS 0.3MM R/A
Features: Zero Insertion Force (ZIF)
Packaging: Tape & Reel (TR)
Contact Finish: Gold
Voltage Rating: 50V
Mounting Type: Surface Mount, Right Angle
Number of Positions: 35
Pitch: 0.012" (0.30mm)
Operating Temperature: -40°C ~ 85°C
Termination: Solder
Height Above Board: 0.035" (0.88mm)
Locking Feature: Flip Lock
Material Flammability Rating: UL94 V-0
Actuator Material: Polyphenylene Sulfide (PPS)
Contact Material: Copper Alloy
FFC, FCB Thickness: 0.12mm
Housing Material: Liquid Crystal Polymer (LCP)
Cable End Type: Straight
Flat Flex Type: FPC
Connector/Contact Type: Contacts, Bottom
Produkt ist nicht verfügbar
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FF02S40SV1JAE ElectronicsDescription: CONN FPC BOTTOM 40POS 0.30MM R/A
Produkt ist nicht verfügbar
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FF02S40SV1-R3000JAE ElectronicsDescription: CONN FPC BOTTOM 40POS 0.30MM R/A
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FF02S40SV1-R300007+
auf Bestellung 4165 Stücke:
Lieferzeit 21-28 Tag (e)
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FF02S40SV1-R3000JAE ElectronicsDescription: CONN FPC BOTTOM 40POS 0.30MM R/A
Produkt ist nicht verfügbar
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FF02S45SV1JAE ElectronicsDescription: CONN FPC BOTTOM 45POS 0.30MM R/A
auf Bestellung 82 Stücke:
Lieferzeit 10-14 Tag (e)
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FF02S45SV1-R3000JAE ElectronicsDescription: CONN FPC BOTTOM 45POS 0.30MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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FF02S50SV1JAE ElectronicsDescription: CONN FPC BOTTOM 50POS 0.30MM R/A
Produkt ist nicht verfügbar
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FF02S50SV1-R3000JAE ElectronicsDescription: CONN FPC BOTTOM 50POS 0.30MM R/A
Produkt ist nicht verfügbar
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FF02S55SV1JAE ElectronicsDescription: CONN FPC BOTTOM 55POS 0.30MM R/A
auf Bestellung 132 Stücke:
Lieferzeit 10-14 Tag (e)
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FF02S55SV1JAE ElectronicsFFC & FPC Connectors 55P Lo-Pro FPC Fine Pitch .3mm
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FF02S55SV1-R3000JAE ElectronicsDescription: CONN FPC BOTTOM 55POS 0.30MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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FF02S55SV1-R3000JAE ElectronicsFFC & FPC Connectors 55P Lo-Pro FPC Fine Pitch .3mm
Produkt ist nicht verfügbar
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FF02S65SV1JAE ElectronicsDescription: CONN FPC BOTTOM 65POS 0.30MM R/A
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 Mindestbestellmenge: 52 Stücke
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FF02S65SV1-R3000JAE ElectronicsDescription: CONN FPC BOTTOM 65POS 0.30MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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FF0360SA1JAE ElectronicsFFC & FPC Connectors 60P R/A .5mm FPC
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
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FF0360SA1JAE ElectronicsDescription: CONN FPC BOTTOM 60POS 0.5MM R/A
Packaging: Strip
Part Status: Active
Connector/Contact Type: Contacts, Bottom
Flat Flex Type: FPC
Cable End Type: Straight
Housing Material: Liquid Crystal Polymer (LCP)
FFC, FCB Thickness: 0.30mm
Contact Material: Copper Alloy
Actuator Material: Polyamide (PA), Nylon, Glass Filled
Locking Feature: Rotary Lock
Height Above Board: 0.079" (2.00mm)
Termination: Solder
Operating Temperature: -40°C ~ 85°C
Pitch: 0.020" (0.50mm)
Number of Positions: 60
Mounting Type: Surface Mount, Right Angle
Voltage Rating: 50V
Contact Finish: Gold
Features: Zero Insertion Force (ZIF)
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.51 EUR
10+14.03 EUR
25+13.15 EUR
50+12.52 EUR
Mindestbestellmenge: 2 Stücke
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FF0360SA1-R2000JAE ElectronicsFFC & FPC Connectors 60P CAM LOCK FPC 0.5MM
Produkt ist nicht verfügbar
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FF0360SA1-R2000JAE ElectronicsDescription: CONN FPC BOTTOM 60POS 0.50MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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FF0364SA1JAE ElectronicsFFC & FPC Connectors 64P CAM LOCK FPC 0.5MM
Produkt ist nicht verfügbar
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FF0364SA1JAE ElectronicsDescription: CONN FPC BOTTOM 64POS 0.50MM R/A
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
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FF0364SA1-R2000JAE ElectronicsFFC & FPC Connectors 64P CAM LOCK FPC 0.5MM
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FF0364SA1-R2000JAE ElectronicsDescription: CONN FPC BOTTOM 64POS 0.50MM R/A
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FF0368SA1JAE ElectronicsFFC & FPC Connectors 68P CAM LOCK FPC 0.5MM
Produkt ist nicht verfügbar
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FF0368SA1JAE ElectronicsDescription: CONN FPC BOTTOM 68POS 0.50MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
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FF0368SA1-R2000JAE ElectronicsFFC & FPC Connectors 68P CAM LOCK FPC 0.5MM
Produkt ist nicht verfügbar
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FF0368SA1-R2000JAE ElectronicsDescription: CONN FPC BOTTOM 68POS 0.50MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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FF0380SA1JAE ElectronicsFFC & FPC Connectors 80P R/A .5mm FPC
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
1+20.12 EUR
10+16.4 EUR
25+15.12 EUR
50+14.22 EUR
100+13.36 EUR
250+12.35 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF0380SA1JAE ElectronicsDescription: CONN FPC BOTTOM 80POS 0.5MM R/A
Part Status: Active
Connector/Contact Type: Contacts, Bottom
Flat Flex Type: FPC
Cable End Type: Straight
Housing Material: Liquid Crystal Polymer (LCP)
FFC, FCB Thickness: 0.30mm
Contact Material: Copper Alloy
Actuator Material: Polyamide (PA), Nylon, Glass Filled
Locking Feature: Rotary Lock
Height Above Board: 0.079" (2.00mm)
Termination: Solder
Operating Temperature: -40°C ~ 85°C
Pitch: 0.020" (0.50mm)
Number of Positions: 80
Mounting Type: Surface Mount, Right Angle
Voltage Rating: 50V
Contact Finish: Gold
Features: Zero Insertion Force (ZIF)
Packaging: Strip
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
2+20.63 EUR
10+17.53 EUR
25+16.43 EUR
50+15.65 EUR
Mindestbestellmenge: 2 Stücke
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FF0380SA1-R2000JAE ElectronicsFFC & FPC Connectors 80P CAM LOCK FPC 0.5MM
Produkt ist nicht verfügbar
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FF0380SA1-R2000JAE ElectronicsDescription: CONN FPC BOTTOM 80POS 0.50MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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FF0380SV1-R2000JAE ElectronicsFFC & FPC Connectors 80P CAM LOCK FPC 0.5MM
Produkt ist nicht verfügbar
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FF0380SV1-R2000JAE ElectronicsDescription: CONN FPC BOTTOM 80POS 0.50MM R/A
Produkt ist nicht verfügbar
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FF0396SA1JAE ElectronicsFFC & FPC Connectors SKT 96 CONT GLD PLTD
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
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FF0396SA1JAE ElectronicsDescription: CONN FPC BOTTOM 96POS 0.50MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 34 Stücke
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FF0396SA1-R2000JAE ElectronicsFFC & FPC Connectors 96P CAM LOCK FPC 0.5MM
Produkt ist nicht verfügbar
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FF0396SA1-R2000JAE ElectronicsDescription: CONN FPC BOTTOM 96POS 0.50MM R/A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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FF05130M2BfastSiCDescription: SICFET N-CH 500V 26A PQFN5x6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 15V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6mA (Typ)
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +15V, -8V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 300 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 300 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.07 EUR
10+5.06 EUR
100+4.05 EUR
Mindestbestellmenge: 4 Stücke
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FF05130M2GfastSiCDescription: SICFET N-CH 500V 23A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 170mOhm @ 6A, 15V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6mA (Typ)
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +15V, -8V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 300 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 300 V
Qualification: AEC-Q101
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
auf Bestellung 1198 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.63 EUR
10+7.19 EUR
100+5.75 EUR
Mindestbestellmenge: 3 Stücke
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FF06010E-3AfastSiCDescription: SICFET N-CH 650V 169A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 18V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 7390 pF @ 400 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
1+103.89 EUR
10+38.09 EUR
100+35.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06010FAfastSiCDescription: SICFET N-CH 650V 140A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 18V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7390 pF @ 400 V
auf Bestellung 290 Stücke:
Lieferzeit 10-14 Tag (e)
1+103.17 EUR
10+37.83 EUR
100+35.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06010QAfastSiCDescription: SICFET N-CH 650V 169A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 60A, 18V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7390 pF @ 400 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
1+103.89 EUR
10+38.09 EUR
100+35.5 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06020E-3AfastSiCDescription: SICFET N-CH 650V 110A TO-247-3L
Input Capacitance (Ciss) (Max) @ Vds: 4437 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 400 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +18V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: TO-247-3L
Vgs(th) (Max) @ Id: 2.5V @ 60mA (Typ)
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 18V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+64.97 EUR
10+23.81 EUR
100+22.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06020FAfastSiCDescription: SICFET N-CH 650V 101A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 18V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4437 pF @ 400 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+64.24 EUR
10+23.55 EUR
100+21.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06020J-7AfastSiCDescription: SICFET N-CH 650V 101A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 18V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4437 pF @ 400 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+64.24 EUR
10+23.55 EUR
100+21.94 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06020QAfastSiCDescription: SICFET N-CH 650V 110A TO-247-4L
Input Capacitance (Ciss) (Max) @ Vds: 4437 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 15 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +18V, -8V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Power Dissipation (Max): 405W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 35A, 18V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-247-4
Packaging: Tube
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+64.97 EUR
10+23.81 EUR
100+22.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF06030E-3AfastSiCDescription: SICFET N-CH 650V 75A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40mA (Typ)
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.96 EUR
10+14.29 EUR
100+13.32 EUR
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FF06030FAfastSiCDescription: SICFET N-CH 650V 74A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TOLL
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.25 EUR
10+14.02 EUR
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FF06030J-7fastSiCDescription: SICFET N-CH 650V 62A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA (Typ)
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
auf Bestellung 300 Stücke:
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FF06030J-7AfastSiCDescription: SICFET N-CH 650V 74A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: D2PAK-7L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 300 Stücke:
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1+38.25 EUR
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FF06030QfastSiCDescription: SICFET N-CH 650V 65A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
auf Bestellung 300 Stücke:
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FF06030QAfastSiCDescription: SICFET N-CH 650V 75A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30A, 18V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3015 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
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FF06060E-3AfastSiCDescription: SICFET N-CH 650V 43A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-3L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 300 Stücke:
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FF06060FAfastSiCDescription: SICFET N-CH 650V 44A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TOLL
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Qualification: AEC-Q101
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FF06060J-7AfastSiCDescription: SICFET N-CH 650V 44A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: D2PAK-7L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Qualification: AEC-Q101
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FF06060QAfastSiCDescription: SICFET N-CH 650V 43A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 18V
Power Dissipation (Max): 202W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1499 pF @ 400 V
Qualification: AEC-Q101
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FF06100FAfastSiCDescription: SICFET N-CH 650V 23.5A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 300 Stücke:
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10+5.75 EUR
100+5.36 EUR
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FF06100GfastSiCDescription: SICFET N-CH 650V 20.6A PDFN8x8
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 14mA
Supplier Device Package: 4-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 204 Stücke:
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2+14.79 EUR
10+5.41 EUR
100+5.05 EUR
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FF06100J-7fastSiCDescription: SICFET N-CH 650V 20.6A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 14mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 400 V
auf Bestellung 300 Stücke:
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FF06320AfastSiCDescription: SICFET N-CH 650V 8.8A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 2A, 18V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4mA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 317.5 pF @ 400 V
auf Bestellung 265 Stücke:
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FF06320BfastSiCDescription: SICFET N-CH 650V 8.6A PQFN5x6
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 2A, 18V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 4mA (Typ)
Supplier Device Package: 8-PQFN (5x6), Power56
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 318 pF @ 400 V
auf Bestellung 9975 Stücke:
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5+4.58 EUR
13+1.68 EUR
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4000+1.52 EUR
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FF06MR12A04MA2AKSA1Infineon TechnologiesDiscrete Semiconductor Modules HybridPACK DSC S module with SiC MOSFET and NTC
auf Bestellung 115 Stücke:
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1+421.33 EUR
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FF06MR12A04MA2AKSA1Infineon TechnologiesDescription: HYBRIDPACK DSC S MODULE WITH SIC
Packaging: Tube
Package / Case: 11-PowerDIP Module (2.091", 53.10mm)
Mounting Type: Through Hole
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 190A
Input Capacitance (Ciss) (Max) @ Vds: 10100pF @ 850V
Rds On (Max) @ Id, Vgs: 5.56mOhm @ 190A, 18V
Gate Charge (Qg) (Max) @ Vgs: 420nC @ 18V
Vgs(th) (Max) @ Id: 4.55V @ 60mA
Supplier Device Package: PG-MDIP-11-1
Grade: Automotive
Qualification: AEC-Q101
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FF07009M2QfastSiCDescription: SICFET N-CH 750V 175A TO-247-4L
auf Bestellung 300 Stücke:
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1+82.12 EUR
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FF07015QAfastSiCDescription: SICFET N-CH 750V 136A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 50A, 18V
Power Dissipation (Max): 555W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 329 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 7252 pF @ 500 V
auf Bestellung 300 Stücke:
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FF07025FAfastSiCDescription: SICFET N-CH 750V 81A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V
auf Bestellung 300 Stücke:
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FF07025J-7AfastSiCDescription: SICFET N-CH 750V 81A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V
auf Bestellung 300 Stücke:
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1+64.24 EUR
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FF07025QAfastSiCDescription: SICFET N-CH 750V 89A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 30A, 18V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 60mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 4604 pF @ 500 V
auf Bestellung 300 Stücke:
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1+64.97 EUR
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FF07035E-3AfastSiCDescription: SICFET N-CH 750V 62A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
auf Bestellung 300 Stücke:
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1+38.96 EUR
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FF07035FAfastSiCDescription: SICFET N-CH 750V 61A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 267W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.25 EUR
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FF07035J-7AfastSiCDescription: SICFET N-CH 750V 61A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 267W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.25 EUR
10+14.02 EUR
100+13.07 EUR
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FF07035QAfastSiCDescription: SICFET N-CH 750V 62A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 22A, 18V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 40mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2818 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.96 EUR
10+14.29 EUR
100+13.32 EUR
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FF07075E-3AfastSiCDescription: SICFET N-CH 750V 34A TO-247-3L
Packaging: Tube
Package / Case: TO-247-3
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.47 EUR
10+8.23 EUR
100+7.68 EUR
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FF07075FAfastSiCDescription: SICFET N-CH 750V 36A TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.74 EUR
10+7.97 EUR
100+7.43 EUR
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FF07075J-7AfastSiCDescription: SICFET N-CH 750V 36A TO-263-7L
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-263-7L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.74 EUR
10+7.97 EUR
100+7.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FF07075QAfastSiCDescription: SICFET N-CH 750V 34A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 10A, 18V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 20mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +18V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1564 pF @ 500 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.47 EUR
10+8.23 EUR
100+7.68 EUR
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FF07150M2DfastSiCDescription: SICFET N-CH 750V 14A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 194mOhm @ 5A, 15V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: TO-220-3 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
Vgs (Max): +15V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 500 V
Input Capacitance (Ciss) (Max) @ Vds: 687 pF @ 500 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FF0829SA1-R200JAE ElectronicsDescription: CONN FPC BOTTOM 29POS 0.20MM R/A
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FF0829SA1-R200JAE ElectronicsDescription: CONN FPC BOTTOM 29POS 0.20MM R/A
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 Mindestbestellmenge: 200 Stücke
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FF0829SA1-R200JAE ElectronicsDescription: CONN FPC BOTTOM 29POS 0.20MM R/A
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FF0829SA1-R300JAE ElectronicsDescription: CONN FPC BOTTOM 29POS 0.20MM R/A
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FF0829SA1-R300JAE ElectronicsDescription: CONN FPC BOTTOM 29POS 0.20MM R/A
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FF0829SA1-R300JAE ElectronicsDescription: CONN FPC BOTTOM 29POS 0.20MM R/A
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FF0829SA1-R3000JAE ElectronicsDescription: CONN FPC BOTTOM 29POS 0.20MM R/A
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FF0829SA1-R3000JAE ElectronicsFFC & FPC Connectors
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FF0841SA1-R300JAE ElectronicsDescription: CONN FPC BOTTOM 41POS 0.20MM R/A
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FF0841SA1-R300JAE ElectronicsDescription: CONN FPC BOTTOM 41POS 0.20MM R/A
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