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G084SN05 V.5AUO
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
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G084SN05 V.7AUO
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
G084SN05 V.8AUO
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
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G084SN05V9 LCD-Display
Produktcode: 83367
zu Favoriten hinzufügen Lieblingsprodukt
Optoelektronik > Indikatoren
Produkt ist nicht verfügbar
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G085136000Excelitas TechnologiesDescription: LINEAR STAGE TB 50-16
Packaging: Box
Type: Adjustment Unit
Length: 60mm
Boreholes: M3
Adjustment Range: 16mm
Produkt ist nicht verfügbar
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G085C03D32Goford SemiconductorDescription: MOSFET N/P-CH 30V 28A 8DFN
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 25nC @ 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, 23mOhm @ 6A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1085pF @ 15V, 1352pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc), 12A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 13W (Tc), 30W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4758 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.44 EUR
24+0.88 EUR
100+0.57 EUR
500+0.43 EUR
1000+0.39 EUR
2000+0.36 EUR
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G085C03D32Goford SemiconductorDescription: MOSFET N/P-CH 30V 28A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 13W (Tc), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1085pF @ 15V, 1352pF @ 15V
Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V, 23mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 25nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Produkt ist nicht verfügbar
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G085FW01 V.8AUO
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
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G085P02TSGoford SemiconductorDescription: P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.05W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.26 EUR
20+1.09 EUR
100+0.84 EUR
500+0.67 EUR
1000+0.54 EUR
2000+0.49 EUR
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G085P02TSGoford SemiconductorDescription: P-20V,-8.2A,RD(MAX)<8.5M@-4.5V,V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-TSSOP
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.05W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.44 EUR
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G087KEMO ELECTRONICDescription: KEMO ELECTRONIC - G087 - Gehäuse, schwarz, ABS, Wandmontage - 120x70x65mm
tariffCode: 39269097
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
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G087245MersenIndustrial & Electrical Fuses CC1591 CP GRC 20 190 10
Produkt ist nicht verfügbar
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G087498MersenCartridge Fuses 250V SU 1,25 A 5.20
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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G088282499/00
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
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G089KEMO ELECTRONICDescription: KEMO ELECTRONIC - G089 - Gehäuse, schwarz, ABS, Wandmontage, mit transparentem Deckel - 120x70x30mm
tariffCode: 39269097
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
19+13.47 EUR
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G0891204Danaher CorporationG0891204
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
1+893.48 EUR
3+820.2 EUR
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G089499MersenIndustrial & Electrical Fuses CC1051 CP GRB 36 127 40
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
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G08B1E681KN0B0S0N0Songtian Electronic Technology (HK) LimitedDescription: CAP CER 680PF 250V Y5P RADIAL
Capacitance: 680 pF
Part Status: Active
Height - Seated (Max): 0.433" (11.00mm)
Ratings: X1, Y2
Lead Spacing: 0.394" (10.00mm)
Applications: Safety
Size / Dimension: 0.157" Dia (4.00mm)
Temperature Coefficient: Y5P (B)
Package / Case: Radial, Disc
Voltage - Rated: 250V
Lead Style: Straight
Tolerance: ±10%
Packaging: Bag
Operating Temperature: -25°C ~ 125°C
Mounting Type: Through Hole
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.9 EUR
39+0.55 EUR
52+0.4 EUR
100+0.37 EUR
500+0.3 EUR
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G08B1E681KQ0T0S0N0Songtian Electronics Co., LtdDescription: CAP CER 680PF 250V Y5P RADIAL
Size / Dimension: 0.157" Dia (4.00mm)
Temperature Coefficient: Y5P (B)
Package / Case: Radial, Disc
Voltage - Rated: 250V
Lead Style: Straight
Tolerance: ±10%
Packaging: Box
Capacitance: 680 pF
Part Status: Active
Height - Seated (Max): 0.433" (11.00mm)
Ratings: X1, Y2
Lead Spacing: 0.394" (10.00mm)
Applications: Safety
Operating Temperature: -25°C ~ 125°C
Mounting Type: Through Hole
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.9 EUR
35+0.61 EUR
50+0.48 EUR
100+0.39 EUR
500+0.31 EUR
1000+0.26 EUR
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G08F1E222MN0B0S0N0Songtian Electronic Technology (HK) LimitedDescription: CAP CER 2200PF 250V Y5V RADIAL
Capacitance: 2200 pF
Part Status: Active
Height - Seated (Max): 0.413" (10.50mm)
Ratings: X1, Y2
Lead Spacing: 0.394" (10.00mm)
Applications: Safety
Operating Temperature: -25°C ~ 125°C
Mounting Type: Through Hole
Size / Dimension: 0.157" Dia (4.00mm)
Temperature Coefficient: Y5V (F)
Package / Case: Radial, Disc
Voltage - Rated: 250V
Lead Style: Straight
Tolerance: ±20%
Packaging: Bag
auf Bestellung 979 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.9 EUR
39+0.55 EUR
52+0.4 EUR
100+0.37 EUR
500+0.3 EUR
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G08F1E222MQ0T0S0N0---G08F1E222MQ0T0S0N0 2200 пкФ 250 В 2.2nF ±20% Y2 250V Plugin,P=7.5mm Suppression Capacitors ROHS Конденсатори
Produkt ist nicht verfügbar
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G08N02HGoford SemiconductorDescription: N20V, 12A, RD<11.3M@4.5V,VTH0.5V
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 10 V
Produkt ist nicht verfügbar
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G08N02LGoford SemiconductorDescription: N20V, 8A, RD<12.3M@4.5V,VTH0.5V~
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 12A, 4.5V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 929 pF @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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G08N03D2Goford SemiconductorDescription: N30V,8A,RD<20M@10V,VTH1.0V~2.0V,
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 17W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 681 pF @ 15 V
Produkt ist nicht verfügbar
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G08N06SGOFORD SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 5A; 2.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5A
Power dissipation: 2.1W
Case: SOP8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 50nC
Kind of channel: enhancement
Technology: Trench
Produkt ist nicht verfügbar
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G08N06SGoford SemiconductorDescription: N60V, RD(MAX)<30M@10V,RD(MAX)<40
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 30 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.3 EUR
Mindestbestellmenge: 4000 Stücke
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G08N06SGoford SemiconductorDescription: MOSFET N-CH 60V 5A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 979 pF @ 30 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.19 EUR
Mindestbestellmenge: 4000 Stücke
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G08N06SGoford SemiconductorDescription: N60V, RD(MAX)<30M@10V,RD(MAX)<40
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 3A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 30 V
auf Bestellung 3644 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.34 EUR
26+0.83 EUR
100+0.54 EUR
500+0.4 EUR
1000+0.37 EUR
2000+0.33 EUR
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G08P06D3Goford SemiconductorDescription: MOSFET P-CH 60V 8A DFN3*3-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.43 EUR
15000+0.39 EUR
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G08P06D3Goford SemiconductorDescription: P60V,RD(MAX)<52M@-10V,VTH-2V~-3.
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2340 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.09 EUR
17+1.31 EUR
100+0.86 EUR
500+0.65 EUR
1000+0.6 EUR
2000+0.55 EUR
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G08P06D3Goford SemiconductorDescription: P60V,RD(MAX)<52M@-10V,VTH-2V~-3.
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (3.15x3.05)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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G08P1Amphenol PositronicDescription: CONTACTS
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.41 EUR
10+15.74 EUR
25+14.88 EUR
50+14.51 EUR
100+13.78 EUR
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G08P1SouriauD-Sub Contacts CONTACTS FOR NASA D-
Produkt ist nicht verfügbar
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G08S1SouriauD-Sub Contacts CRMP CT20S FOR#22/26 SPACE
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G08S1Amphenol PositronicDescription: CONTACTS
Contact Form: Machined
Contact Finish Thickness: FLASH
Contact Type: Female Socket
Type: Signal
Wire Gauge: 22-30 AWG
Contact Termination: Crimp
Contact Finish: Gold
Packaging: Bag
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.41 EUR
10+14.18 EUR
25+13.08 EUR
50+12.3 EUR
100+11.57 EUR
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