Produkte > QH8
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| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| QH8MA4TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 30V 9A/8A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A, 8A Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 15V Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 15.5nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 2838 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MB5TCR | ROHM | Description: ROHM - QH8MB5TCR - Dual-MOSFET, n- und p-Kanal, 40 V, 40 V, 4.5 A, 4.5 A, 0.034 ohm tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40 rohsCompliant: YES Dauer-Drainstrom Id: 4.5 Dauer-Drainstrom Id, p-Kanal: 4.5 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 40 usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 4.5 Drain-Source-Durchgangswiderstand, p-Kanal: 0.034 Verlustleistung Pd: 1.5 Gate-Source-Schwellenspannung, max.: 2.5 Verlustleistung, p-Kanal: 1.5 Drain-Source-Spannung Vds, n-Kanal: 40 euEccn: NLR Bauform - Transistor: TSMT Anzahl der Pins: 8 Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.034 productTraceability: No Wandlerpolarität: n- und p-Kanal Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 1.5 Betriebswiderstand, Rds(on): 0.034 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 2991 Stücke: Lieferzeit 14-21 Tag (e) |
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| QH8MB5TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 40V 4.5A TSMT8 Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 4388 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MB5TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 40V 4.5A/5A 8-Pin TSMT T/R | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 60 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| QH8MB5TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 40V 4.5A TSMT8 Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 20V, 920pF @ 20V Rds On (Max) @ Id, Vgs: 44mOhm @ 4.5A, 10V, 41mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V, 17.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TSMT8 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MB5TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 40V 4.5A/5A 8-Pin TSMT T/R | auf Bestellung 2750 Stücke: Lieferzeit 14-21 Tag (e) |
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| QH8MB5TCR | ROHM Semiconductor | MOSFETs 40V 4.5A/5.0A, Dual Nch+Pch, TSMT8, Power MOSFET | auf Bestellung 2195 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MC5TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 60V 3A TSMT8 Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Cut Tape (CT) | auf Bestellung 4832 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MC5TCR | ROHM Semiconductor | MOSFETs 60V 3.0A/3.5A, Dual Nch+Pch, TSMT8, Power MOSFET | auf Bestellung 2743 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MC5TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 60V 3A/3.5A 8-Pin TSMT T/R | auf Bestellung 1200 Stücke: Lieferzeit 14-21 Tag (e) |
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| QH8MC5TCR | ROHM | Description: ROHM - QH8MC5TCR - Dual-MOSFET, n- und p-Kanal, 60 V, 60 V, 3 A, 3 A, 0.07 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 3A Dauer-Drainstrom Id, p-Kanal: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3A Drain-Source-Durchgangswiderstand, p-Kanal: 0.07ohm Verlustleistung, p-Kanal: 1.5W euEccn: NLR Bauform - Transistor: TSMT Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.07ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n- und p-Kanal Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 150°C | auf Bestellung 2940 Stücke: Lieferzeit 14-21 Tag (e) |
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| QH8MC5TCR | Rohm Semiconductor | Description: MOSFET N/P-CH 60V 3A TSMT8 Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V, 91mOhm @ 3.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 135pF @ 30V, 850pF @ 30V Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.5A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 1.1W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: TSMT8 Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 10V, 17.3nC @ 10V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| QH8MC5TCR | Rohm Semiconductor | Trans MOSFET N/P-CH 60V 3A/3.5A 8-Pin TSMT T/R | auf Bestellung 1384 Stücke: Lieferzeit 14-21 Tag (e) |
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