Produkte > Tsm
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| TSM4424CS RVG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 20V 8A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Drain to Source Voltage (Vdss): 20 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4424CS RVG | Taiwan Semiconductor | Trans MOSFET N-CH 20V 8A 8-Pin SOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4424CS RVG | Taiwan Semiconductor | MOSFET 20V, 8A, Single N-Channel Power MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4424CS RVG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 20V 8A 8SOP Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4425CS | Taiwan Semiconductor | MOSFETs 30V P-channel MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4425CS RL | Taiwan Semiconductor | MOSFETs 30V N channel MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4425CS RLG | Taiwan Semiconductor | MOSFET 30V N channel Mosfet | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4425CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET P-CH 30V 11A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 11A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 8 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4426 | auf Bestellung 78 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| TSM4426CS | auf Bestellung 567 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| TSM4433CS RL | Taiwan Semiconductor | MOSFETs 20V P Channel MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4435BCS | Taiwan Semiconductor | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4435BCS RL | Taiwan Semiconductor | MOSFET 30V N Channel Mosfet | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4435BCS RLG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 30V 9.1A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 9.1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4435BCS RLG | Taiwan Semiconductor | MOSFET 30V N channel Mosfet | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4435CS RL | Taiwan Semiconductor | MOSFETs 30V P Channel MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4436CS | Taiwan Semiconductor Corporation | Description: 60V, 8A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4436CS RL | Taiwan Semiconductor | MOSFET 60V N Channel Mosfet | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4436CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 60V 8A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4436CS RLG | Taiwan Semiconductor | MOSFET 60V, 8A, Single N-Channel Power MOSFET | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4436CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 60V 8A 8SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V | auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4459CS | Taiwan Semiconductor | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4459CS RLG | Taiwan Semiconductor | MOSFET P-Channel17A, 30V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4459CS RLG | Taiwan Semiconductor | Trans MOSFET P-CH 30V 17A 8-Pin SOP T/R | auf Bestellung 4285 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM4510R0FE-TR | Ohmite | Thick Film Resistors - SMD 10 OHM 1% 100PPM 45W | auf Bestellung 379 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM45150RFE-TR | Ohmite | Thick Film Resistors - SMD 150 OHM 1% 100PPM 45W | auf Bestellung 338 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM451K00FE-TR | Ohmite | Thick Film Resistors - SMD 1K OHM 1% 100PPM 45W | auf Bestellung 320 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM451R00FE-TR | Ohmite | Thick Film Resistors - SMD 1 OHM 1% 100PPM 45W | auf Bestellung 391 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM451R50FE-TR | Ohmite | Thick Film Resistors - SMD 1.5 OHM 1% 100PPM 45W | auf Bestellung 350 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4520R0FE-TR | Ohmite | Thick Film Resistors - SMD 20 OHM 1% 100PPM 45W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM45300RFE-TR | Ohmite | Thick Film Resistors - SMD 300 OHM 1% 100PPM 45W | auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4539DCS | Taiwan Semiconductor | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4539DCS RLG | Taiwan Semiconductor | MOSFET 30V P Channel Mosfet | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4547R0FE-TR | Ohmite | Thick Film Resistors - SMD 47 OHM 1% 100PPM 45W | auf Bestellung 392 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM45500RFE-TR | Ohmite | Thick Film Resistors - SMD 500 OHM 1% 100PPM 45W | auf Bestellung 312 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM455K00FE-TR | Ohmite | Thick Film Resistors - SMD 5K OHM 1% 100PPM 45W | auf Bestellung 376 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4800N15CX6 Produktcode: 206904
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TSM4800N15CX6 | Taiwan Semiconductor | MOSFET N-CH 150V 1.4A SOT-26 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4800N15CX6 | Taiwan Semiconductor | LDO Voltage Regulators 150V, 1.4A, Single, N-Channel Low Voltage MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4800N15CX6 | Taiwan Semiconductor Corporation | Description: 150V, 1.4A, SINGLE N-CHANNEL PO Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOT-26 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4800N15CX6 | Taiwan Semiconductor | Trans MOSFET N-CH 150V 1.4A 6-Pin SOT-26 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 12000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4800N15CX6 RFG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 150V 1.4A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V | auf Bestellung 6411 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4800N15CX6 RFG | Taiwan Semiconductor | Trans MOSFET N-CH 150V 1.4A 6-Pin SOT-26 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM4800N15CX6 RFG | Taiwan Semiconductor | Trans MOSFET N-CH 150V 1.4A 6-Pin SOT-26 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM4800N15CX6 RFG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 150V 1.4A SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 480mOhm @ 1.1A, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: SOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 10 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4800N15CX6 RFG | Taiwan Semiconductor | Trans MOSFET N-CH 150V 1.4A 6-Pin SOT-26 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM4800N15CX6 RFG Produktcode: 206905
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TSM4800N15CX6 RFG | Taiwan Semiconductor | MOSFETs 150V, 1.4A, Single N-Channel Power MOSFET | auf Bestellung 12453 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4806CS | Taiwan Semiconductor Corporation | Description: 20V, 28A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4806CS | Taiwan Semiconductor | Trans MOSFET N-CH 20V 28A 8-Pin SOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4806CS RLG | Taiwan Semiconductor | Trans MOSFET N-CH 20V 28A 8-Pin SOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4806CS RLG | TAIWAN SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 28A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 28A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±8V On-state resistance: 20mΩ Mounting: SMD Gate charge: 12.3nC Kind of package: tape Kind of channel: enhancement | auf Bestellung 161 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM4806CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 20V 28A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) | auf Bestellung 4820 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4806CS RLG | Taiwan Semiconductor | Trans MOSFET N-CH 20V 28A 8-Pin SOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4806CS RLG | Taiwan Semiconductor | MOSFETs 20V, 28A, Single N-Channel Power MOSFET | auf Bestellung 6066 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4806CS RLG | Taiwan Semiconductor | Trans MOSFET N-CH 20V 28A 8-Pin SOP T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM4806CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 20V 28A 8SOP Input Capacitance (Ciss) (Max) @ Vds: 961 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 4.5V Current - Continuous Drain (Id) @ 25°C: 28A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM480P06CH | Taiwan Semiconductor Corporation | Description: -60V, -20A, SINGLE P-CHANNEL POW Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-251S (IPAK SL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM480P06CH X0G | Taiwan Semiconductor | MOSFETs -60V, -20A, Single P-Channel Power MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM480P06CH X0G | Taiwan Semiconductor | Trans MOSFET P-CH 60V 20A 3-Pin(3+Tab) TO-251S Tube | auf Bestellung 2697 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM480P06CH X0G | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 60V 20A TO251 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V | auf Bestellung 7540 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM480P06CI C0G | Taiwan Semiconductor Corporation | Description: MOSFET P-CH 60V 20A ITO220 Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: ITO-220 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 27W (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM480P06CI C0G | Taiwan Semiconductor | MOSFET 60V 20Amp P channel Power Mosfet | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM480P06CP | Taiwan Semiconductor Corporation | Description: -60V, -20A, SINGLE P-CHANNEL POW Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM480P06CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 60V 20A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V | auf Bestellung 5207 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM480P06CP ROG | Taiwan Semiconductor | MOSFETs -60V, -20A, Single P-Channel Power MOSFET | auf Bestellung 7374 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM480P06CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 60V 20A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM480P06CP ROG | Taiwan Semiconductor | Trans MOSFET P-CH 60V 20A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM480P06CP ROG | Taiwan Semiconductor | Trans MOSFET P-CH 60V 20A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM480P06CP ROG | Taiwan Semiconductor Co., Ltd. | Transistor P-Channel MOSFET; 60V; 20V; 65mOhm; 20A; 40W; -50°C ~ 150°C; TSM480P06CP ROG TSM480P06CP TTSM480p06cp Anzahl je Verpackung: 10 Stücke | auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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| TSM480P06CZ C0G | Taiwan Semiconductor Corporation | Description: MOSFET P-CH 60V 20A TO220 Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 22.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM480P06CZ C0G | Taiwan Semiconductor | MOSFET 60V 20Amp P channel Mosfet | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4835CS RL | Taiwan Semiconductor | MOSFETs 30V P Channel MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4925DCS | Taiwan Semiconductor | MOSFETs Dual 30V P channel MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4925DCS | Taiwan Semiconductor Corporation | Description: MOSFET 2P-CH 30V 7.1A 8SOP Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4925DCS RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2P-CH 30V 7.1A 8SOP Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) | auf Bestellung 4787 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4925DCS RLG | Taiwan Semiconductor | MOSFET -30V, -7.1A, Dual P-Channel Power MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4925DCS RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2P-CH 30V 7.1A 8SOP Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 3V @ 250µA | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4936DCS | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 30V 5.9A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4936DCS RLG | Taiwan Semiconductor | Trans MOSFET N-CH 30V 6A 8-Pin SOP T/R | auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 68 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4936DCS RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 30V 5.9A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | auf Bestellung 26223 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4936DCS RLG | Taiwan Semiconductor | Trans MOSFET N-CH 30V 6A 8-Pin SOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4936DCS RLG | Taiwan Semiconductor | MOSFETs 30V, 5.9A, Dual N-Channel Power MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4936DCS RLG | Taiwan Semiconductor Co., Ltd. | Transistor 2xN-Channel MOSFET; 30V; 20V; 53mOhm; 5,9A; 3W; -55°C ~ 150°C; TSM4936DCS RLG TSM4936DCS TTSM4936dcs Anzahl je Verpackung: 25 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| TSM4936DCS RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 30V 5.9A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4936DCS RLG | Taiwan Semiconductor | Trans MOSFET N-CH 30V 6A 8-Pin SOP T/R | auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 68 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4936DCS RLG | Taiwan Semiconductor | Trans MOSFET N-CH 30V 6A 8-Pin SOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4936DCS RLG | TAIWAN SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.9A Power dissipation: 2.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 13nC Kind of package: tape Kind of channel: enhancement | auf Bestellung 225 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM4946DCS | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 60V 4.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 24V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4946DCS | Taiwan Semiconductor | MOSFETs 60V, 4.5A, Dual, N-Channel Low Voltage MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4946DCS RLG | Taiwan Semiconductor | Trans MOSFET N-CH 60V 4.5A 8-Pin SOP T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM4946DCS RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 60V 4.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 24V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4946DCS RLG | Taiwan Semiconductor | Trans MOSFET N-CH 60V 4.5A 8-Pin SOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4946DCS RLG | TAIWAN SEMICONDUCTOR | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 4.5A; 1.7W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.5A Power dissipation: 1.7W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: SMD Gate charge: 30nC Kind of package: tape Kind of channel: enhancement | auf Bestellung 2486 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM4946DCS RLG | Taiwan Semiconductor | MOSFETs 60V, 4.5A, Dual N-Channel Power MOSFET | auf Bestellung 2482 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4946DCS RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 60V 4.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 24V Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | auf Bestellung 9637 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM4953DCS | Taiwan Semiconductor | MOSFET Dual 30V P channel MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4953DCS | Taiwan Semiconductor Corporation | Description: MOSFET 2P-CH 30V 4.9A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 4.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4953DCS RL | Taiwan Semiconductor | MOSFET Dual 30V P Channel MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM4953DCS RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2P-CH 30V 4.9A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 745pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 4.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOP Part Status: Active | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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