Produkte > FP7
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|
| FP7G100US60 | Fairchild Semiconductor | Description: IGBT MODULE 600V 100A 400W EPM7 Input Capacitance (Cies) @ Vce: 6.085 nF @ 30 V Current - Collector Cutoff (Max): 250 µA Power - Max: 400 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 100 A Part Status: Obsolete Supplier Device Package: EPM7 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A Operating Temperature: -40°C ~ 125°C (TJ) Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: EPM7 Packaging: Tube | auf Bestellung 3236 Stücke: Lieferzeit 10-14 Tag (e) |
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| FP7G50US60 | onsemi | Description: IGBT MODULE 600V 50A 250W EPM7 Packaging: Tube Package / Case: EPM7 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A NTC Thermistor: No Supplier Device Package: EPM7 Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.92 nF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
| FP7G50US60 | ONSEMI | Description: ONSEMI - FP7G50US60 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2076 Stücke: Lieferzeit 14-21 Tag (e) |
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| FP7G50US60 | Fairchild Semiconductor | Description: IGBT MODULE 600V 50A 250W EPM7 Packaging: Tube Package / Case: EPM7 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A NTC Thermistor: No Supplier Device Package: EPM7 Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 250 W Current - Collector Cutoff (Max): 250 µA Input Capacitance (Cies) @ Vce: 2.92 nF @ 30 V | auf Bestellung 2076 Stücke: Lieferzeit 10-14 Tag (e) |
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| FP7G75US60 | Fairchild Semiconductor | Description: IGBT Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: EPM7 Packaging: Tube Input Capacitance (Cies) @ Vce: 4.515 nF @ 30 V Current - Collector Cutoff (Max): 250 µA Power - Max: 310 W Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 75 A Supplier Device Package: EPM7 NTC Thermistor: No Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A Operating Temperature: -40°C ~ 125°C (TJ) | auf Bestellung 3394 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||
| FP7G75US60 | ONSEMI | Description: ONSEMI - FP7G75US60 - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2882 Stücke: Lieferzeit 14-21 Tag (e) |
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| FP7G75US60 | Fairch | 08+ N/A | auf Bestellung 4600 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH |