Produkte > GP3
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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| GP3T016A120H | SemiQ | SiC MOSFETs Gen3 1200V, 16mohm SiC MOSFET, TO-247-4L | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||
| GP3T016A120H | SemiQ | Description: GEN3 1200V, 16M SIC MOSFET, TO-2 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 132A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V Power Dissipation (Max): 484W (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6779 pF @ 1000 V | auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3T016A120TS | SemiQ | Description: GEN3 1200V 16M SIC MOSFET TSPAK Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 101A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 50A, 18V Power Dissipation (Max): 273W (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Supplier Device Package: TSPAK Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6779 pF @ 1000 V | auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3T017A120H | SemiQ | Description: GEN3 1200V 17M SIC MOSFET TO-247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 40A, 18V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 5828 pF @ 1000 V | auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3T020A120H | SemiQ | SiC MOSFETs Gen3 1200V, 20mohm SiC MOSFET, TO-247-4L | auf Bestellung 234 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3T020A120H | SemiQ | Description: GEN3 1200V, 20M SIC MOSFET, TO-2 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 18V Power Dissipation (Max): 429W (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 6078 pF @ 1000 V | auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3T020A120TS | SemiQ | Description: GEN3 1200V 20M SIC MOSFET TSPAK Input Capacitance (Ciss) (Max) @ Vds: 6078 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -8V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TSPAK Vgs(th) (Max) @ Id: 4V @ 20mA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 40A, 18V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant Packaging: Tube | auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3T034A120H | SemiQ | Description: GEN3 1200V 34M SIC MOSFET TO-247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 20A, 18V Power Dissipation (Max): 246W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2584 pF @ 1000 V | auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3T040A120H | SemiQ | SiC MOSFETs Gen3 1200V, 40mohm SiC MOSFET, TO-247-4L | auf Bestellung 120 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3T040A120H | SemiQ | Description: GEN3 1200V, 40M SIC MOSFET, TO-2 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Power Dissipation (Max): 246W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2803 pF @ 1000 V | auf Bestellung 76 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3T040A120TS | SemiQ | Description: GEN3 1200V 40M SIC MOSFET TSPAK Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 4V @ 10mA Supplier Device Package: TSPAK Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2803 pF @ 1000 V | auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3T080A120H | SemiQ | Description: GEN3 1200V, 80M SIC MOSFET, TO-2 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V | auf Bestellung 99 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3T080A120H | SemiQ | SiC MOSFETs Gen3 1200V, 80mohm SiC MOSFET, TO-247-4L | auf Bestellung 122 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3T080A120J | SemiQ | Description: GEN3 1200V 80M SIC MOSFET TO-263 Packaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 4V @ 5mA Supplier Device Package: TO-263-7L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V | auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3T080A120TS | SemiQ | Description: GEN3 1200V 80M SIC MOSFET TSPAK Input Capacitance (Ciss) (Max) @ Vds: 1351 pF @ 1000 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -8V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TSPAK Vgs(th) (Max) @ Id: 4V @ 5mA Power Dissipation (Max): 102W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 18V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), Variant Packaging: Tube | auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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| GP3Y6003AK0F | Sharp Microelectronics | Description: OPTOELECTRONIC COMPONENT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||
| GP3YOD017K | SHARP | 06+ | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH |