Produkte > UF3
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| UF3SC120016K3S | Qorvo / UnitedSiC | MOSFET 1200V/16mOhm, SiC, N-OFF STACKED CASCODE, G3 FAST, TO-247-3L | auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
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| UF3SC120016K3S | Qorvo | SiC MOSFETs 1200V/16mO,SICFET,G3,TO247-3 | auf Bestellung 275 Stücke: Lieferzeit 10-14 Tag (e) |
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| UF3SC120016K3S | onsemi | Description: SICFET N-CH 1200V 107A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V | auf Bestellung 515 Stücke: Lieferzeit 10-14 Tag (e) |
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| UF3SC120016K3S | onsemi | SiC MOSFETs 1200V/16MOSICFETG3TO24 | auf Bestellung 203 Stücke: Lieferzeit 10-14 Tag (e) |
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| UF3SC120016K4S | Qorvo | SiC MOSFETs 1200V/16mO,SICFET,G3,TO247-4 | auf Bestellung 632 Stücke: Lieferzeit 10-14 Tag (e) |
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| UF3SC120016K4S | onsemi | Description: SICFET N-CH 1200V 107A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 107A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 50A, 12V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 7824 pF @ 800 V | auf Bestellung 568 Stücke: Lieferzeit 10-14 Tag (e) |
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| UF3SC120016K4S | ONSEMI | Description: ONSEMI - UF3SC120016K4S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 107 A, 1.2 kV, 0.016 ohm, TO-247 tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 107A hazardous: false rohsPhthalatesCompliant: YES isCanonical: Y Gate-Source-Schwellenspannung, max.: 4.7V MOSFET-Modul-Konfiguration: Eins Verlustleistung: 517W SVHC: No SVHC (17-Jan-2023) Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 12V Drain-Source-Durchgangswiderstand: 0.016ohm | auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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| UF3SC120016K4S | onsemi | SiC MOSFETs 1200V/16MOSICFETG3TO24 | auf Bestellung 466 Stücke: Lieferzeit 10-14 Tag (e) |
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| UF3SC120040B7S | onsemi | Description: 1200V/40MOHM, SIC, STACKED FAST Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| UF3SC120040B7S | QORVO | Description: QORVO - UF3SC120040B7S - Siliziumkarbid-MOSFET, Eins, n-Kanal, 47 A, 1.2 kV, 35 mohm, D2PAK tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: YES Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 6V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 214W Bauform - Transistor: D2PAK Anzahl der Pins: 7Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 35mohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 512 Stücke: Lieferzeit 14-21 Tag (e) |
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| UF3SC120040B7S | onsemi | Description: 1200V/40MOHM, SIC, STACKED FAST Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 35A, 12V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V | auf Bestellung 2048 Stücke: Lieferzeit 10-14 Tag (e) |
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| UF3SC120040B7S | onsemi | SiC MOSFETs 1200V/40MOSICFETG3TO263-7 | auf Bestellung 227 Stücke: Lieferzeit 10-14 Tag (e) |
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