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BUK6207-55C,118NexperiaMOSFET N-CHAN 55V 81A
Produkt ist nicht verfügbar
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BUK6207-55C,118Nexperia USA Inc.Description: MOSFET N-CH 55V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6208-40C,118NXP USA Inc.Description: MOSFET N-CH 40V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK6209-30CNXP USA Inc.Description: PFET, 50A I(D), 30V, 0.0192OHM,
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1503 Stücke
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BUK6209-30CNXP SemiconductorsNXP Semiconductors
Produkt ist nicht verfügbar
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BUK6209-30C,118Nexperia USA Inc.Description: MOSFET N-CH 30V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 12A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1760 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK6209-30C,118NexperiaMOSFET N-CHAN 30V 50A
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BUK6209-30C-NEXNexperia USA Inc.Description: PFET, 50A I(D), 30V, 0.0192OHM,
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1503 Stücke
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BUK6210-55C,118NexperiaMOSFET N-CHAN 55V 78A
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BUK6210-55C,118Nexperia USA Inc.Description: MOSFET N-CH 55V 78A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6211-75C,118NexperiaMOSFET N-CHAN 75V 74A
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BUK6211-75C,118Nexperia USA Inc.Description: MOSFET N-CH 75V 74A DPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK6212-40C,118NEXPERIADescription: NEXPERIA - BUK6212-40C,118 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: Lead (27-Jun-2024)
auf Bestellung 5239 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.87 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK6212-40C,118NexperiaMOSFET N-CHAN 40V 50A
Produkt ist nicht verfügbar
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BUK6212-40C,118Nexperia USA Inc.Description: MOSFET N-CH 40V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 12A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6212-40C,118-NEXRochester Electronics, LLCDescription: PFET, 50A I(D), 40V, 0.02OHM, 1-
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 807 Stücke
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BUK6213-30A,118Nexperia USA Inc.Description: MOSFET N-CH 30V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 102W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1986 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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BUK6213-30A,118NexperiaMOSFET Trans MOSFET N-CH 30V 64A 3-Pin(2+Tab)
Produkt ist nicht verfügbar
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BUK6213-30CNXP SemiconductorsNXP Semiconductors
Produkt ist nicht verfügbar
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BUK6213-30CNexperiaNexperia
Produkt ist nicht verfügbar
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BUK6213-30C,118NEXPERIADescription: NEXPERIA - BUK6213-30C,118 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: Lead (27-Jun-2024)
auf Bestellung 17100 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.63 EUR
Mindestbestellmenge: 2500 Stücke
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BUK6213-30C,118Nexperia USA Inc.Description: MOSFET N-CH 30V 47A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6213-30C,118NexperiaMOSFET N-CHAN 30V 47A
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
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BUK6213-30C,118-NEXNexperia USA Inc.Description: PFET, 47A I(D), 30V, 0.029OHM, 1
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 25 V
Produkt ist nicht verfügbar
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BUK621330A
auf Bestellung 8639 Stücke:
Lieferzeit 21-28 Tag (e)
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BUK6215-75C,118NexperiaMOSFET N-CHAN 75V 57A
auf Bestellung 5790 Stücke:
Lieferzeit 10-14 Tag (e)
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BUK6215-75C,118Nexperia USA Inc.Description: MOSFET N-CH 75V 57A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 15A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 61.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6217-55CNexperiaMOSFETs
Produkt ist nicht verfügbar
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BUK6217-55CRochester Electronics, LLCDescription: PFET, 44A I(D), 55V, 0.0285OHM,
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
 Mindestbestellmenge: 1000 Stücke
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BUK6217-55C
Produktcode: 179616
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Transistoren > MOSFET N-CH
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BUK6217-55C,118Nexperia USA Inc.Description: MOSFET N-CH 55V 44A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6217-55C,118NEXPERIADescription: NEXPERIA - BUK6217-55C,118 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: Lead (27-Jun-2024)
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 59 Stücke
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BUK6217-55C,118NexperiaTrans MOSFET N-CH 55V 44A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 2888 Stücke:
Lieferzeit 14-21 Tag (e)
466+1.42 EUR
518+1.26 EUR
1000+1.13 EUR
Mindestbestellmenge: 466 Stücke
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BUK6217-55C,118NexperiaMOSFET N-CHAN 55V 44A
Produkt ist nicht verfügbar
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BUK6218-40CNXP USA Inc.Description: PFET, 42A I(D), 40V, 0.028OHM, 1
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
Produkt ist nicht verfügbar
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BUK6218-40C,118Nexperia USA Inc.Description: MOSFET N-CH 40V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6218-40C,118NexperiaMOSFET N-CHAN 40V 42A
auf Bestellung 7467 Stücke:
Lieferzeit 10-14 Tag (e)
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BUK6218-40C,118Nexperia USA Inc.Description: MOSFET N-CH 40V 42A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8627 Stücke:
Lieferzeit 10-14 Tag (e)
444+1.23 EUR
Mindestbestellmenge: 444 Stücke
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BUK6218-40C,118-NEXNexperia USA Inc.Description: PFET, 42A I(D), 40V, 0.028OHM, 1
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 25 V
Produkt ist nicht verfügbar
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BUK6218-40C118Nexperia USA Inc.Description: BUK6218-4240N-CHANNMOSFETO-252
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK6226-75CNXP SemiconductorsNXP Semiconductors
Produkt ist nicht verfügbar
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BUK6226-75CNexperiaNexperia
Produkt ist nicht verfügbar
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BUK6226-75C,118NexperiaMOSFETs N-CHAN 75V 33A
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BUK6226-75C,118Nexperia USA Inc.Description: MOSFET N-CH 75V 33A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BUK6228-55C,118Nexperia USA Inc.Description: MOSFET N-CH 55V 31A DPAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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BUK6228-55C,118NexperiaMOSFET N-CHAN 55V 31A
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BUK6240-75C,118Nexperia USA Inc.Description: MOSFET N-CH 75V 22A DPAK
auf Bestellung 7500 Stücke:
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240+2.24 EUR
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BUK6246-75C,118Nexperia USA Inc.Description: MOSFET N-CH 75V 22A DPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
auf Bestellung 15031 Stücke:
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1066+0.55 EUR
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BUK6246-75C,118NexperiaMOSFET N-Chan 75V 22A 60W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK6246-75C,118Nexperia USA Inc.Description: MOSFET N-CH 75V 22A DPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK624R5-30CNexperia USA Inc.Description: PFET, 90A I(D), 30V, 0.0075OHM,
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4707 pF @ 25 V
Qualification: AEC-Q101
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BUK624R5-30C,118Nexperia USA Inc.Description: MOSFET N-CH 30V 90A DPAK
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Qualification: AEC-Q101
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Input Capacitance (Ciss) (Max) @ Vds: 4707 pF @ 25 V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK624R5-30C,118Nexperia USA Inc.Description: MOSFET N-CH 30V 90A DPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4707 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BUK624R5-30C,118NexperiaMOSFET N-CHAN 30V 90A
Produkt ist nicht verfügbar
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BUK625R0-40C,118Nexperia USA Inc.Description: MOSFET N-CH 40V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK625R0-40C,118Nexperia USA Inc.Description: MOSFET N-CH 40V 90A DPAK
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
Grade: Automotive
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BUK625R0-40C,118NexperiaMOSFET N-CHAN 40V 90A
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BUK625R0-40C,118-NXPNXP USA Inc.Description: MOSFET N-CH 40V 90A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 158W (Ta)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Produkt ist nicht verfügbar
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BUK625R2-30CNXP SemiconductorsNXP Semiconductors
Produkt ist nicht verfügbar
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BUK625R2-30C,118Nexperia USA Inc.Description: MOSFET N-CH 30V 90A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 36466 Stücke:
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888+0.65 EUR
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BUK625R2-30C,118Nexperia USA Inc.Description: MOSFET N-CH 30V 90A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BUK625R2-30C,118NexperiaMOSFET N-Chan 30V 90A
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BUK625R2-30C,118Nexperia USA Inc.Description: MOSFET N-CH 30V 90A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK626R2-40CNexperiaNexperia
Produkt ist nicht verfügbar
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BUK626R2-40C,118Nexperia USA Inc.Description: MOSFET N-CH 40V 90A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 128W (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK626R2-40C,118NexperiaMOSFET N-Chan 30V 90A
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BUK6381000
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BUK6381000A
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BUK6381000B
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BUK638500AB
auf Bestellung 22000 Stücke:
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BUK638500B
auf Bestellung 8639 Stücke:
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BUK638800
auf Bestellung 8639 Stücke:
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BUK638800A
auf Bestellung 8639 Stücke:
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BUK638800AB
auf Bestellung 22000 Stücke:
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BUK638800B
auf Bestellung 8639 Stücke:
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BUK6507-55C,127NXP USA Inc.Description: MOSFET N-CH 55V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 4728 Stücke:
Lieferzeit 10-14 Tag (e)
503+1.13 EUR
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BUK6507-55C,127NXP USA Inc.Description: MOSFET N-CH 55V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Produkt ist nicht verfügbar
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BUK6507-75C,127Nexperia USA Inc.Description: MOSFET N-CH 75V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Power Dissipation (Max): 204W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Produkt ist nicht verfügbar
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BUK6510-75C,127NXP USA Inc.Description: MOSFET N-CH 75V 77A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6510-75C,127Nexperia USA Inc.Description: MOSFET N-CH 75V 77A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5.251 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4291 Stücke:
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BUK652R0-30C,127NXP SemiconductorsNXP Semiconductors
Produkt ist nicht verfügbar
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BUK652R0-30C,127NexperiaMOSFET N-CHAN 30V 120A
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BUK652R0-30C,127NXP USA Inc.Description: MOSFET N-CH 30V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14964 pF @ 25 V
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BUK652R1-30C,127NXP USA Inc.Description: MOSFET N-CH 30V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 10918 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 3006 Stücke:
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290+2.02 EUR
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BUK652R1-30C,127NXP SemiconductorsNXP Semiconductors
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BUK652R1-30C,127NexperiaMOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET
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BUK652R3-40C,127NXP SemiconductorsNXP Semiconductors
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BUK652R3-40C,127NXP USA Inc.Description: MOSFET N-CH 40V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK652R3-40C,127NexperiaMOSFET N-CHAN 40V 120A
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BUK652R6-40C,127NexperiaMOSFET N-CHAN 40V 120A
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BUK652R6-40C,127NXP USA Inc.Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11334 pF @ 25 V
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BUK652R6-40C,127NXP SemiconductorsNXP Semiconductors
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BUK652R7-30C,127NexperiaMOSFET N-CHAN 30V 100A
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BUK652R7-30C,127NXP USA Inc.Description: MOSFET N-CH 30V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 204W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V
Qualification: AEC-Q101
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BUK652R7-30C,127NXP SemiconductorsNXP Semiconductors
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BUK652R7-30C,127NXP USA Inc.Description: MOSFET N-CH 30V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 204W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V
Qualification: AEC-Q101
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BUK653R2-55C,127NXP USA Inc.Description: MOSFET N-CH 55V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V
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BUK653R2-55C,127NXP USA Inc.Description: MOSFET N-CH 55V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK653R3-30C,127Nexperia USA Inc.Description: MOSFET N-CH 30V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 204W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUK653R4-40C,127NXP USA Inc.Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 25A, 10V
Power Dissipation (Max): 204W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V
Qualification: AEC-Q101
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