Produkte > CUH
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||
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| CUH-41-30010 | TE Connectivity / Agastat | Time Delay & Timing Relays RELAY TIME DELAY DPDT 10A 24VDC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUH-41-30010 | TE Connectivity Potter & Brumfield Relays | Description: RELAY TIME DELAY 10SEC 10A 277V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUH-41-30120 | TE Connectivity Potter & Brumfield Relays | Description: RELAY TIME DELAY 120SEC 10A 277V Packaging: Bulk Delay Time: 1 Sec ~ 120 Sec Mounting Type: Socketable Function: On-Delay Circuit: DPDT (2 Form C) Termination Style: Plug In Voltage - Supply: 24VDC Contact Rating @ Voltage: 10A @ 277VAC Relay Type: Mechanical Relay Timing Adjustment Method: External Resistor Timing Initiate Method: Input Voltage Part Status: Obsolete | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUH-41-30120 | TE Connectivity / Agastat | Time Delay & Timing Relays DPDT 2 FORM C 2C/O TIME DELAY | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUH-42-30010 | TE Connectivity / Agastat | Time Delay & Timing Relays RELAY TIME DELAY DPDT 10A 24VDC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUH-42-30010 | TE Connectivity Potter & Brumfield Relays | Description: RELAY TIME DELAY 10SEC 10A 277V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUH38004 | Hoffman Enclosures, Inc. | Description: ROOF COOLING UNIT 3800W Packaging: Bulk | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHD005B-F01 | N/A | 08+ | auf Bestellung 1582 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS10F60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 1A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Current - Reverse Leakage @ Vr: 40 µA @ 60 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS10F60,H3F | Toshiba | Schottky Diodes & Rectifiers Sml-Signal Schottky 1A 60V 130pF | auf Bestellung 8540 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS10F60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 1A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 60 V Current - Reverse Leakage @ Vr: 40 µA @ 60 V | auf Bestellung 5577 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS10F60H3F(A | Toshiba | Schottky Barrier Diode Silicon Epitaxial | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS15F30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 1.5A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 170pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS15F30,H3F | Toshiba | Schottky Diodes & Rectifiers DIODE SINGLE 30V | auf Bestellung 2329 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS15F30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 1.5A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 170pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 30 V | auf Bestellung 8650 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS15F30,H3F(T | TOSHIBA | Description: TOSHIBA - CUHS15F30,H3F(T - Schottky-Gleichrichterdiode, 30 V, 1.5 A, Einfach, SOD-323HE, 2 Pin(s), 520 mV tariffCode: 85411000 Bauform - Diode: SOD-323HE Durchlassstoßstrom: 10A rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: TBA Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 520mV usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1.5A euEccn: NLR Wiederkehrende Spitzensperrspannung: 30V Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS15F30,H3F(T | TOSHIBA | Description: TOSHIBA - CUHS15F30,H3F(T - Schottky-Gleichrichterdiode, 30 V, 1.5 A, Einfach, SOD-323HE, 2 Pin(s), 520 mV tariffCode: 85411000 Bauform - Diode: SOD-323HE Durchlassstoßstrom: 10A rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: TBA Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 520mV usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1.5A euEccn: NLR Wiederkehrende Spitzensperrspannung: 30V Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS15F40,H3F | Toshiba | Schottky Diodes & Rectifiers RECT 40V US2H-2 | auf Bestellung 19507 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS15F40,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 1.5A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS15F40,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 1.5A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V | auf Bestellung 12015 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS15F40,H3F(A | Toshiba | Schottky Barrier Diode Silicon Epitaxial | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS15F40,H3F(T | TOSHIBA | Description: TOSHIBA - CUHS15F40,H3F(T - Schottky-Gleichrichterdiode, 40 V, 1.5 A, Einfach, SOD-323HE, 2 Pin(s), 630 mV tariffCode: 85411000 Bauform - Diode: SOD-323HE Durchlassstoßstrom: 10A rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: TBA Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 630mV usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1.5A euEccn: NLR Wiederkehrende Spitzensperrspannung: 40V Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS15F40,H3F(T | TOSHIBA | Description: TOSHIBA - CUHS15F40,H3F(T - Schottky-Gleichrichterdiode, 40 V, 1.5 A, Einfach, SOD-323HE, 2 Pin(s), 630 mV tariffCode: 85411000 Bauform - Diode: SOD-323HE Durchlassstoßstrom: 10A rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: TBA Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 630mV usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1.5A euEccn: NLR Wiederkehrende Spitzensperrspannung: 40V Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS15F60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 1.5A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V | auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS15F60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 1.5A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1.5 A Current - Reverse Leakage @ Vr: 50 µA @ 60 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS15F60,H3F | Toshiba | Schottky Diodes & Rectifiers SCHOTKY VR:60V, IO:1.5A | auf Bestellung 4733 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS15S30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 1.5A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V | auf Bestellung 41492 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS15S30,H3F | Toshiba | Schottky Diodes & Rectifiers RECT 30V US2H | auf Bestellung 60032 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS15S30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 1.5A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1.5 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V | auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS15S30,H3F(T | TOSHIBA | Description: TOSHIBA - CUHS15S30,H3F(T - Schottky-Gleichrichterdiode, 30 V, 1.5 A, Einfach, SOD-323HE, 2 Pin(s), 430 mV tariffCode: 85411000 Bauform - Diode: SOD-323HE Durchlassstoßstrom: 10A rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: TBA Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 430mV usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1.5A euEccn: NLR Wiederkehrende Spitzensperrspannung: 30V Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 2870 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS15S30,H3F(T | TOSHIBA | Description: TOSHIBA - CUHS15S30,H3F(T - Schottky-Gleichrichterdiode, 30 V, 1.5 A, Einfach, SOD-323HE, 2 Pin(s), 430 mV tariffCode: 85411000 Bauform - Diode: SOD-323HE Durchlassstoßstrom: 10A rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: TBA Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 430mV usEccn: EAR99 Durchschnittlicher Durchlassstrom: 1.5A euEccn: NLR Wiederkehrende Spitzensperrspannung: 30V Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 2870 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS15S40,H3F | Toshiba | Schottky Diodes & Rectifiers DIODE SINGLE 40V | auf Bestellung 5961 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS15S40,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 1.5A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 170pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V | auf Bestellung 5741 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS15S40,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 1.5A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 170pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1.5 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS15S60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 1.5A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1.5 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS15S60,H3F | Toshiba | Schottky Diodes & Rectifiers SCHOTKY VR:60V, IO:1.5A | auf Bestellung 5546 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS15S60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 1.5A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 130pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 670 mV @ 1.5 A Current - Reverse Leakage @ Vr: 450 µA @ 60 V | auf Bestellung 2895 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS20F30,H3F | Toshiba | Schottky Diodes & Rectifiers Sml-Signal Schottky 2A 30V 380pF | auf Bestellung 25584 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS20F30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 2A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 380pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Current - Reverse Leakage @ Vr: 60 µA @ 30 V | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS20F30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 2A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 380pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Current - Reverse Leakage @ Vr: 60 µA @ 30 V | auf Bestellung 17394 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS20F30,H3F(A | Toshiba | Schottky Barrier Diode Silicon Epitaxial | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS20F30,H3F(T | TOSHIBA | Description: TOSHIBA - CUHS20F30,H3F(T - Schottky-Gleichrichterdiode, 30 V, 2 A, Einfach, SOD-323HE, 2 Pin(s), 470 mV tariffCode: 85411000 Bauform - Diode: SOD-323HE Durchlassstoßstrom: 10A rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: TBA Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 470mV usEccn: EAR99 Durchschnittlicher Durchlassstrom: 2A euEccn: NLR Wiederkehrende Spitzensperrspannung: 30V Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS20F30,H3F(T | TOSHIBA | Description: TOSHIBA - CUHS20F30,H3F(T - Schottky-Gleichrichterdiode, 30 V, 2 A, Einfach, SOD-323HE, 2 Pin(s), 470 mV tariffCode: 85411000 Bauform - Diode: SOD-323HE Durchlassstoßstrom: 10A rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: TBA Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 470mV usEccn: EAR99 Durchschnittlicher Durchlassstrom: 2A euEccn: NLR Wiederkehrende Spitzensperrspannung: 30V Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 2995 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS20F40,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 2A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A Current - Reverse Leakage @ Vr: 60 µA @ 40 V | auf Bestellung 26254 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS20F40,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 2A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 2 A Current - Reverse Leakage @ Vr: 60 µA @ 40 V | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS20F40,H3F | Toshiba | Schottky Diodes & Rectifiers Sml-Signal Schottky 2A 40V 300pF | auf Bestellung 9036 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS20F40,H3F(T | Toshiba | Diode Small Signal Schottky 2A 2-Pin US-H | auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) |
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| CUHS20F40H3F(T | Toshiba | Array | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS20F60,H3F | Toshiba | Schottky Diodes & Rectifiers SCHOTKY VR=60V, IO=2A | auf Bestellung 7734 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS20F60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 2A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 2 A Current - Reverse Leakage @ Vr: 70 µA @ 60 V | auf Bestellung 2435 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS20F60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 2A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 300pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 2 A Current - Reverse Leakage @ Vr: 70 µA @ 60 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS20S30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 2A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 390pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V | auf Bestellung 13360 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS20S30,H3F | Toshiba | Schottky Diodes & Rectifiers Sml-Signal Schottky 2A 30V 390pF | auf Bestellung 56004 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS20S30,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 30V 2A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 390pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 410 mV @ 2 A Current - Reverse Leakage @ Vr: 500 µA @ 30 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS20S30,H3F | Toshiba | Diode Small Signal Schottky Si 2A 2-Pin US-H T/R | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS20S30,H3F(A | Toshiba | Schottky Barrier Diode Silicon Epitaxial | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS20S30,H3F(T | TOSHIBA | Description: TOSHIBA - CUHS20S30,H3F(T - Schottky-Gleichrichterdiode, 30 V, 2 A, Einfach, SOD-323HE, 2 Pin(s), 410 mV tariffCode: 85411000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS20S30,H3F(T | Toshiba | CUHS20S30,H3F(T | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS20S30,H3F(T | TOSHIBA | Description: TOSHIBA - CUHS20S30,H3F(T - Schottky-Gleichrichterdiode, 30 V, 2 A, Einfach, SOD-323HE, 2 Pin(s), 410 mV tariffCode: 85411000 Bauform - Diode: SOD-323HE Durchlassstoßstrom: 10A rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: TBA Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 410mV usEccn: EAR99 Durchschnittlicher Durchlassstrom: 2A euEccn: NLR Wiederkehrende Spitzensperrspannung: 30V Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS20S40,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 2A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 290pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Current - Reverse Leakage @ Vr: 300 µA @ 40 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS20S40,H3F | Toshiba | Schottky Diodes & Rectifiers Sml-Signal Schottky 2A 40V 290pF | auf Bestellung 15707 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS20S40,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 40V 2A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 290pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A Current - Reverse Leakage @ Vr: 300 µA @ 40 V | auf Bestellung 4188 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS20S40,H3F(A | Toshiba | Schottky Barrier Diode Silicon Epitaxial | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS20S60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 2A US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 290pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 650 µA @ 60 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS20S60,H3F | Toshiba | Rectifier Diode Small Signal Schottky Si 2A 2-Pin US-H | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS20S60,H3F | Toshiba | Schottky Diodes & Rectifiers SCHOTKY VR=60V, IO=2A | auf Bestellung 12133 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS20S60,H3F | Toshiba Semiconductor and Storage | Description: DIODE SCHOTTKY 60V 2A US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 290pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: US2H Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A Current - Reverse Leakage @ Vr: 650 µA @ 60 V | auf Bestellung 2456 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHS20S60,H3F(T | TOSHIBA | Description: TOSHIBA - CUHS20S60,H3F(T - Schottky-Gleichrichterdiode, 60 V, 2 A, Einfach, SOD-323HE, 2 Pin(s), 530 mV tariffCode: 85411000 Bauform - Diode: SOD-323HE Durchlassstoßstrom: 10A rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: TBA Diodenkonfiguration: Einfach Qualifikation: - Durchlassspannung, max.: 530mV usEccn: EAR99 Durchschnittlicher Durchlassstrom: 2A euEccn: NLR Wiederkehrende Spitzensperrspannung: 60V Anzahl der Pins: 2Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C SVHC: To Be Advised | auf Bestellung 2985 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHS20S60,H3F(T | Toshiba | CUHS20S60,H3F(T | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHZ12V,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 12VWM 13.6VC US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 280pF @ 1MHz Current - Peak Pulse (10/1000µs): 60A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 13.6V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No Part Status: Active | auf Bestellung 8607 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ12V,H3F | Toshiba | Zener Diodes 12 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | auf Bestellung 5102 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ12V,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 12VWM 13.6VC US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 280pF @ 1MHz Current - Peak Pulse (10/1000µs): 60A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 13.6V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ16V,H3F | Toshiba | Zener Diodes 16 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | auf Bestellung 4981 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ16V,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 16VWM 17VC US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 210pF @ 1MHz Current - Peak Pulse (10/1000µs): 42A (8/20µs) Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.3V Voltage - Clamping (Max) @ Ipp: 17V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No | auf Bestellung 3294 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ16V,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 16VWM 17VC US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 210pF @ 1MHz Current - Peak Pulse (10/1000µs): 42A (8/20µs) Voltage - Reverse Standoff (Typ): 16V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.3V Voltage - Clamping (Max) @ Ipp: 17V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ20V,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 20VWM 20.6VC US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 180pF @ 1MHz Current - Peak Pulse (10/1000µs): 36A (8/20µs) Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.8V Voltage - Clamping (Max) @ Ipp: 20.6V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No | auf Bestellung 10851 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ20V,H3F | Toshiba | Zener Diodes 20 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | auf Bestellung 18252 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ20V,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 20VWM 20.6VC US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 180pF @ 1MHz Current - Peak Pulse (10/1000µs): 36A (8/20µs) Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 18.8V Voltage - Clamping (Max) @ Ipp: 20.6V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ20V,H3F(T | Toshiba | Dioden (andere als Fotodioden und Leuchtdioden ""LED"") ZENER DIODE | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHZ24V,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 24VWM 25.5VC US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 150pF @ 1MHz Current - Peak Pulse (10/1000µs): 27A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 25.5V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ24V,H3F | Toshiba | Zener Diodes 24 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | auf Bestellung 2328 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ24V,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 24VWM 25.5VC US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 150pF @ 1MHz Current - Peak Pulse (10/1000µs): 27A (8/20µs) Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.8V Voltage - Clamping (Max) @ Ipp: 25.5V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No Part Status: Active | auf Bestellung 4224 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ30V,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 30VWM 33.8VC US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 26A (8/20µs) Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 33.8V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHZ30V,H3F | Toshiba | Zener Diodes 30 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | auf Bestellung 6633 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ30V,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 30VWM 33.8VC US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 125pF @ 1MHz Current - Peak Pulse (10/1000µs): 26A (8/20µs) Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 28V Voltage - Clamping (Max) @ Ipp: 33.8V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No | auf Bestellung 1054 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ36V,H3F | Toshiba | Zener Diodes 36 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | auf Bestellung 3275 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ36V,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 36VWM 41.2VC US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 105pF @ 1MHz Current - Peak Pulse (10/1000µs): 23A (8/20µs) Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 34V Voltage - Clamping (Max) @ Ipp: 41.2V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ36V,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 36VWM 41.2VC US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 105pF @ 1MHz Current - Peak Pulse (10/1000µs): 23A (8/20µs) Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 34V Voltage - Clamping (Max) @ Ipp: 41.2V (Typ) Power - Peak Pulse: 2100W (2.1kW) Power Line Protection: No | auf Bestellung 6907 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ5V6,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 5.6VWM 5.7VC US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 860pF @ 1MHz Current - Peak Pulse (10/1000µs): 91A (8/20µs) Voltage - Reverse Standoff (Typ): 5.6V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 5.7V (Typ) Power - Peak Pulse: 1750W (1.75kW) Power Line Protection: No | auf Bestellung 19250 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ5V6,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 5.6VWM 5.7VC US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 860pF @ 1MHz Current - Peak Pulse (10/1000µs): 91A (8/20µs) Voltage - Reverse Standoff (Typ): 5.6V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Voltage - Clamping (Max) @ Ipp: 5.7V (Typ) Power - Peak Pulse: 1750W (1.75kW) Power Line Protection: No | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ5V6,H3F | Toshiba | Zener Diodes 5.6 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | auf Bestellung 109319 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ6V2,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 6.2VWM 6.1VC US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 735pF @ 1MHz Current - Peak Pulse (10/1000µs): 87A (8/20µs) Voltage - Reverse Standoff (Typ): 6.2V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 6.1V (Typ) Power - Peak Pulse: 1800W (1.8kW) Power Line Protection: No Part Status: Active | auf Bestellung 5507 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ6V2,H3F | Toshiba | Zener Diodes 6.2 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | auf Bestellung 4460 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ6V2,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 6.2VWM 6.1VC US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 735pF @ 1MHz Current - Peak Pulse (10/1000µs): 87A (8/20µs) Voltage - Reverse Standoff (Typ): 6.2V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 6.1V (Typ) Power - Peak Pulse: 1800W (1.8kW) Power Line Protection: No Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ6V8,H3F | Toshiba | Zener Diodes 6.8 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | auf Bestellung 2909 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ6V8,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 6.8VWM 7.2VC US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 585pF @ 1MHz Current - Peak Pulse (10/1000µs): 73A (8/20µs) Voltage - Reverse Standoff (Typ): 6.8V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 7.2V (Typ) Power - Peak Pulse: 1800W (1.8kW) Power Line Protection: No | auf Bestellung 1580 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ6V8,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 6.8VWM 7.2VC US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 585pF @ 1MHz Current - Peak Pulse (10/1000µs): 73A (8/20µs) Voltage - Reverse Standoff (Typ): 6.8V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 7.2V (Typ) Power - Peak Pulse: 1800W (1.8kW) Power Line Protection: No | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| CUHZ8V2,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 8.2VWM 8.5VC US2H Packaging: Tape & Reel (TR) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 450pF @ 1MHz Current - Peak Pulse (10/1000µs): 68A (8/20µs) Voltage - Reverse Standoff (Typ): 8.2V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.7V Voltage - Clamping (Max) @ Ipp: 8.5V (Typ) Power - Peak Pulse: 1900W (1.9kW) Power Line Protection: No | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ8V2,H3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 8.2VWM 8.5VC US2H Packaging: Cut Tape (CT) Package / Case: 2-SMD, Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 450pF @ 1MHz Current - Peak Pulse (10/1000µs): 68A (8/20µs) Voltage - Reverse Standoff (Typ): 8.2V Supplier Device Package: US2H Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.7V Voltage - Clamping (Max) @ Ipp: 8.5V (Typ) Power - Peak Pulse: 1900W (1.9kW) Power Line Protection: No | auf Bestellung 8695 Stücke: Lieferzeit 10-14 Tag (e) |
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| CUHZ8V2,H3F | Toshiba | Zener Diodes 8.2 V Zener Diode, SOD-323HE(US2H) Pd(max):1.2V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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