Produkte > FQN

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
FQN1N50Consemi / FairchildMOSFET QFC 500V 6.0OHM TO92
Produkt ist nicht verfügbar
FQN1N50CBUonsemi / FairchildMOSFET N-CH/400V/5 A/.75OHM
Produkt ist nicht verfügbar
FQN1N50CBUFairchild SemiconductorDescription: MOSFET N-CH 500V 380MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
auf Bestellung 1254 Stücke:
Lieferzeit 21-28 Tag (e)
1254+0.58 EUR
Mindestbestellmenge: 1254
FQN1N50CTAONSEMIDescription: ONSEMI - FQN1N50CTA - Leistungs-MOSFET, n-Kanal, 500 V, 380 mA, 4.6 ohm, TO-226AA, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 500V
rohsCompliant: YES
Dauer-Drainstrom Id: 380mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Verlustleistung Pd: 890mW
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 890mW
Bauform - Transistor: TO-226AA
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 4.6ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 4.6ohm
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1955 Stücke:
Lieferzeit 14-21 Tag (e)
FQN1N50CTAON SemiconductorTrans MOSFET N-CH 500V 0.38A 3-Pin TO-92 Fan-Fold
Produkt ist nicht verfügbar
FQN1N50CTAONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 240mA; Idm: 3.04A; 2.08W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.24A
Pulsed drain current: 3.04A
Power dissipation: 2.08W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: Ammo Pack
Kind of channel: enhanced
Anzahl je Verpackung: 2000 Stücke
Produkt ist nicht verfügbar
FQN1N50CTAonsemiDescription: MOSFET N-CH 500V 380MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
auf Bestellung 3302 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
21+ 1.24 EUR
100+ 0.86 EUR
500+ 0.72 EUR
1000+ 0.61 EUR
Mindestbestellmenge: 19
FQN1N50CTAonsemi / FairchildMOSFET N-CH/500V 0.38A/6OHM
auf Bestellung 2181 Stücke:
Lieferzeit 14-28 Tag (e)
41+1.28 EUR
42+ 1.26 EUR
100+ 0.87 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
2000+ 0.55 EUR
4000+ 0.52 EUR
Mindestbestellmenge: 41
FQN1N50CTAONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 240mA; Idm: 3.04A; 2.08W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.24A
Pulsed drain current: 3.04A
Power dissipation: 2.08W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: Ammo Pack
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQN1N50CTAON SemiconductorTrans MOSFET N-CH 500V 0.38A 3-Pin TO-92 Fan-Fold
Produkt ist nicht verfügbar
FQN1N50CTAON SemiconductorTrans MOSFET N-CH 500V 0.38A 3-Pin TO-92 Fan-Fold
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
FQN1N50CTAonsemiDescription: MOSFET N-CH 500V 380MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Produkt ist nicht verfügbar
FQN1N60CBUonsemiDescription: MOSFET N-CH 600V 300MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Produkt ist nicht verfügbar
FQN1N60CBUON SemiconductorTrans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Bulk
Produkt ist nicht verfügbar
FQN1N60CTAONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.18A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.18A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQN1N60CTAON SemiconductorTrans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Fan-Fold
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
FQN1N60CTAonsemi / FairchildMOSFET 600V NCH MOSFET
auf Bestellung 17559 Stücke:
Lieferzeit 14-28 Tag (e)
32+1.66 EUR
38+ 1.38 EUR
100+ 1.01 EUR
500+ 0.83 EUR
Mindestbestellmenge: 32
FQN1N60CTAONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.18A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.18A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±30V
On-state resistance: 11.5Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQN1N60CTAonsemiDescription: MOSFET N-CH 600V 300MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 16000 Stücke:
Lieferzeit 21-28 Tag (e)
2000+0.48 EUR
6000+ 0.45 EUR
10000+ 0.42 EUR
Mindestbestellmenge: 2000
FQN1N60CTAON SemiconductorTrans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Fan-Fold
Produkt ist nicht verfügbar
FQN1N60CTAON SemiconductorTrans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Fan-Fold
Produkt ist nicht verfügbar
FQN1N60CTAonsemiDescription: MOSFET N-CH 600V 300MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 1384 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
22+ 1.21 EUR
100+ 0.84 EUR
500+ 0.66 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 19
FQN1N60CTAFairchild SemiconductorDescription: SMALL SIGNAL FIELD-EFFECT TRANSI
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 150mA, 10V
Power Dissipation (Max): 1W (Ta), 3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 80002 Stücke:
Lieferzeit 21-28 Tag (e)
1461+0.5 EUR
Mindestbestellmenge: 1461
FQN1N60CTAON SemiconductorTrans MOSFET N-CH 600V 0.3A 3-Pin TO-92 Fan-Fold
Produkt ist nicht verfügbar
FQNL1N50Bonsemi / FairchildMOSFET
Produkt ist nicht verfügbar
FQNL1N50BBUonsemi / FairchildMOSFET 500V Single
Produkt ist nicht verfügbar
FQNL1N50BBUonsemiDescription: MOSFET N-CH 500V 270MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 135mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Produkt ist nicht verfügbar
FQNL1N50BBU_Qonsemi / FairchildMOSFET
Produkt ist nicht verfügbar
FQNL1N50BTAonsemiDescription: MOSFET N-CH 500V 270MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Tc)
Rds On (Max) @ Id, Vgs: 9Ohm @ 135mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Produkt ist nicht verfügbar
FQNL1N50BTAON SemiconductorTrans MOSFET N-CH 500V 0.27A 3-Pin TO-92L Ammo
Produkt ist nicht verfügbar
FQNL1N50BTAonsemi / FairchildMOSFET 500V N-Channel QFET
Produkt ist nicht verfügbar
FQNL2N50Bonsemi / FairchildMOSFET QF 500V 5.3OHM TO92L
Produkt ist nicht verfügbar
FQNL2N50BBUonsemiDescription: MOSFET N-CH 500V 350MA TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Produkt ist nicht verfügbar
FQNL2N50BBUonsemi / FairchildMOSFET 500V Single
Produkt ist nicht verfügbar
FQNL2N50BBU_Qonsemi / FairchildMOSFET 500V Single
Produkt ist nicht verfügbar
FQNL2N50BTAonsemi / FairchildMOSFET 500V N-Channel QFET
Produkt ist nicht verfügbar
FQNL2N50BTAON SemiconductorTrans MOSFET N-CH 500V 0.35A 3-Pin TO-92L Fan-Fold
Produkt ist nicht verfügbar
FQNL2N50BTAFAIRCHILD2003 TO-92L
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
FQNL2N50BTAonsemiDescription: MOSFET N-CH 500V 350MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Produkt ist nicht verfügbar
FQNL2N50BTAFairchild
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
FQNL2N50BTAONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 220mA; Idm: 1.4A; 1.5W; TO92L
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.22A
Pulsed drain current: 1.4A
Power dissipation: 1.5W
Case: TO92L
Gate-source voltage: ±30V
On-state resistance: 5.3Ω
Mounting: THT
Gate charge: 8nC
Kind of package: Ammo Pack
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FQNL2N50BTAonsemiDescription: MOSFET N-CH 500V 350MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Produkt ist nicht verfügbar
FQNL2N50BTAONSEMICategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 220mA; Idm: 1.4A; 1.5W; TO92L
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.22A
Pulsed drain current: 1.4A
Power dissipation: 1.5W
Case: TO92L
Gate-source voltage: ±30V
On-state resistance: 5.3Ω
Mounting: THT
Gate charge: 8nC
Kind of package: Ammo Pack
Kind of channel: enhanced
Produkt ist nicht verfügbar
FQNL2N50BTA_NLonsemi / FairchildMOSFET N-CH/500V/0.64A/5.3OHM
Produkt ist nicht verfügbar