Produkte > IKY
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IKY100N120CH7XKSA1 | Infineon Technologies | Description: INDUSTRY 14 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 99 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A Supplier Device Package: PG-TO247-4-U10 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/359ns Switching Energy: 2.37mJ (on), 2.65mJ (off) Gate Charge: 714 nC Part Status: Active Current - Collector (Ic) (Max): 212 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 400 A Power - Max: 721 W | auf Bestellung 221 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
| IKY100N120CH7XKSA1 | Infineon Technologies | IGBT Transistors INDUSTRY 14 | auf Bestellung 605 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
| IKY120N120CH7XKSA1 | Infineon Technologies | Description: IGBT TRENCH FS 1200V 212A TO247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A Supplier Device Package: PG-TO247-4-U10 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/359ns Switching Energy: 2.37mJ (on), 2.65mJ (off) Test Condition: 600V, 100A, 4Ohm, 15V Gate Charge: 714 nC Part Status: Active Current - Collector (Ic) (Max): 212 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 400 A Power - Max: 721 W | auf Bestellung 185 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
| IKY120N120CH7XKSA1 | Infineon Technologies | IGBT Modules INDUSTRY 14 | auf Bestellung 109 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
| IKY120N120CH7XKSA1 | Infineon Technologies | SP005578301 | Produkt ist nicht verfügbar | |||||||||||||||
| IKY120N120CH7XKSA1 | INFINEON | Description: INFINEON - IKY120N120CH7XKSA1 - IGBT, 220 A, 1.7 V, 780 W, 1.2 kV, TO-247 Plus, 4 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V usEccn: EAR99 euEccn: NLR Verlustleistung: 780W Bauform - Transistor: TO-247 Plus Anzahl der Pins: 4Pin(s) Produktpalette: TRENCHSTOP IGBT 7 Series Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 220A SVHC: No SVHC (14-Jun-2023) | auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IKY120N65EH7XKSA1 | Infineon Technologies | INDUSTRY 14 | Produkt ist nicht verfügbar | |||||||||||||||
| IKY120N65EH7XKSA1 | Infineon Technologies | Description: IGBT TRENCH FS 650V 160A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-2 Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 64 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25ns/175ns Switching Energy: 1.7mJ (on), 1.5mJ (off) Test Condition: 400V, 120A, 10Ohm, 15V Gate Charge: 244 nC Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 480 A Power - Max: 498 W | auf Bestellung 230 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
| IKY120N65EH7XKSA1 | Infineon Technologies | IGBT Modules INDUSTRY 14 | auf Bestellung 176 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
| IKY140N120CH7XKSA1 | Infineon Technologies | Description: IGBT TRENCH FS 1200V 232A TO247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 101 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 140A Supplier Device Package: PG-TO247-4-U10 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/407ns Switching Energy: 2.64mJ (on), 3.9mJ (off) Gate Charge: 1032 nC Part Status: Active Current - Collector (Ic) (Max): 232 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 560 A Power - Max: 962 W | auf Bestellung 73 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
| IKY140N120CH7XKSA1 | Infineon Technologies | IGBT Transistors INDUSTRY 14 | auf Bestellung 583 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
| IKY140N120CH7XKSA1 | Infineon Technologies | SP005560949 | Produkt ist nicht verfügbar | |||||||||||||||
| IKY150N65EH7XKSA1 | Infineon Technologies | IGBT Transistors INDUSTRY 14 | auf Bestellung 177 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
| IKY150N65EH7XKSA1 | Infineon Technologies | INDUSTRY 14 | Produkt ist nicht verfügbar | |||||||||||||||
| IKY150N65EH7XKSA1 | Infineon Technologies | Description: IGBT TRENCH FS 650V 160A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Supplier Device Package: PG-TO247-4-2 Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/343ns Switching Energy: 2.3mJ (on), 2.9mJ (off) Test Condition: 400V, 150A, 10Ohm, 15V Gate Charge: 300 nC Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 600 A Power - Max: 621 W | auf Bestellung 208 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
| IKY40N120CH3 | Infineon Technologies | Infineon INDUSTRY 14 | Produkt ist nicht verfügbar | |||||||||||||||
| IKY40N120CH3XKSA1 | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 136W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.19µC Kind of package: tube Manufacturer series: H3 Turn-on time: 59ns Turn-off time: 306ns Features of semiconductor devices: integrated anti-parallel diode | Produkt ist nicht verfügbar | |||||||||||||||
| IKY40N120CH3XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 1200V 80A 500mW 4-Pin(4+Tab) TO-247 Tube | auf Bestellung 6720 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IKY40N120CH3XKSA1 | Infineon Technologies | IGBT Transistors INDUSTRY 14 | auf Bestellung 206 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
| IKY40N120CH3XKSA1 | Infineon Technologies | Description: IGBT 1200V 80A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 350 ns Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 40A Supplier Device Package: PG-TO247-4 Td (on/off) @ 25°C: 30ns/280ns Switching Energy: 2.18mJ (on), 1.3mJ (off) Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 190 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W | auf Bestellung 226 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
| IKY40N120CH3XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 1200V 80A 500mW 4-Pin(4+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||
| IKY40N120CH3XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 1200V 80A 500000mW 4-Pin(4+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||
| IKY40N120CH3XKSA1 | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 136W; TO247PLUS-4; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 136W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 0.19µC Kind of package: tube Manufacturer series: H3 Turn-on time: 59ns Turn-off time: 306ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IKY40N120CS6XKSA1 | Infineon Technologies | Description: IGBT TRENCH FS 1200V 80A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 255 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-4-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 27ns/315ns Switching Energy: 1.45mJ (on), 1.55mJ (off) Test Condition: 600V, 40A, 9Ohm, 15V Gate Charge: 285 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W | auf Bestellung 723 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
| IKY40N120CS6XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 1200V 80A 500000mW 4-Pin(4+Tab) TO-247 Tube | auf Bestellung 386 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IKY40N120CS6XKSA1 | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 250W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 285nC Kind of package: tube Turn-on time: 54ns Turn-off time: 342ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IKY40N120CS6XKSA1 | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 250W; TO247PLUS-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 250W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 285nC Kind of package: tube Turn-on time: 54ns Turn-off time: 342ns Features of semiconductor devices: integrated anti-parallel diode | Produkt ist nicht verfügbar | |||||||||||||||
| IKY40N120CS6XKSA1 | Infineon Technologies | IGBT Transistors INDUSTRY 14 | auf Bestellung 430 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
| IKY50N120CH3XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 1200V 100A 652000mW 3-Pin(3+Tab) TO-247 Tube | auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IKY50N120CH3XKSA1 | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247PLUS-4; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 173W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 235nC Kind of package: tube Manufacturer series: H3 Turn-on time: 60ns Turn-off time: 325ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IKY50N120CH3XKSA1 | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247PLUS-4; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 173W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 235nC Kind of package: tube Manufacturer series: H3 Turn-on time: 60ns Turn-off time: 325ns Features of semiconductor devices: integrated anti-parallel diode | Produkt ist nicht verfügbar | |||||||||||||||
| IKY50N120CH3XKSA1 | Infineon Technologies | IGBT Transistors INDUSTRY 14 | auf Bestellung 332 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
| IKY50N120CH3XKSA1 | Infineon Technologies | Description: IGBT 1200V 100A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 255 ns Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A Supplier Device Package: PG-TO247-4 Td (on/off) @ 25°C: 32ns/296ns Switching Energy: 2.3mJ (on), 1.9mJ (off) Test Condition: 600V, 50A, 10Ohm, 15V Gate Charge: 235 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 652 W | auf Bestellung 158 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
| IKY50N120CH7XKSA1 | Infineon Technologies | IGBT Transistors INDUSTRY 14 | auf Bestellung 138 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
| IKY50N120CH7XKSA1 | Infineon Technologies | Description: IGBT TRENCH FS 1200V 75A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 86 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Supplier Device Package: PG-TO247-4-U10 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 35ns/331ns Switching Energy: 1.09mJ (on), 1.33mJ (off) Gate Charge: 372 nC Part Status: Active Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 398 W | auf Bestellung 203 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
| IKY50N120CH7XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 1200V 75A 398W 4-Pin(4+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||
| IKY75N120CH3 | Infineon Technologies | IGBT Transistors INDUSTRY 14 | Produkt ist nicht verfügbar | |||||||||||||||
| IKY75N120CH3XKSA1 | Infineon Technologies | IGBT Transistors INDUSTRY 14 | auf Bestellung 280 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
| IKY75N120CH3XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 1200V 75A 938000mW 4-Pin(4+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||
| IKY75N120CH3XKSA1 | INFINEON | Description: INFINEON - IKY75N120CH3XKSA1 - IGBT, 150 A, 2 V, 938 W, 1.2 kV, TO-247, 4 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2V usEccn: EAR99 euEccn: NLR Verlustleistung: 938W Bauform - Transistor: TO-247 Anzahl der Pins: 4Pin(s) Produktpalette: HighSpeed 3 Kollektor-Emitter-Spannung, max.: 1.2kV productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 150A SVHC: No SVHC (17-Jan-2023) | auf Bestellung 149 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IKY75N120CH3XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 1200V 75A 938W 4-Pin(4+Tab) TO-247 Tube | auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IKY75N120CH3XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 1200V 75A 938W 4-Pin(4+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||
| IKY75N120CH3XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 1200V 75A 938W 4-Pin(4+Tab) TO-247 Tube | auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
| IKY75N120CH3XKSA1 | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 256W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 0.37µC Kind of package: tube Manufacturer series: H3 Turn-on time: 70ns Turn-off time: 335ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IKY75N120CH3XKSA1 | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 256W; TO247PLUS-4; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 256W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 0.37µC Kind of package: tube Manufacturer series: H3 Turn-on time: 70ns Turn-off time: 335ns Features of semiconductor devices: integrated anti-parallel diode | Produkt ist nicht verfügbar | |||||||||||||||
| IKY75N120CH3XKSA1 | Infineon Technologies | Description: IGBT 1200V 150A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 292 ns Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A Supplier Device Package: PG-TO247-4 Td (on/off) @ 25°C: 38ns/303ns Switching Energy: 3.4mJ (on), 2.9mJ (off) Test Condition: 600V, 75A, 6Ohm, 15V Gate Charge: 370 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 300 A Power - Max: 938 W | auf Bestellung 381 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
| IKY75N120CH3XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 1200V 75A 938W 4-Pin(4+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||
| IKY75N120CH3XKSA1 Produktcode: 143781 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||
| IKY75N120CH7XKSA1 | Infineon Technologies | Description: IGBT TRENCH FS 1200V 83A TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Supplier Device Package: PG-TO247-4-U10 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42ns/367ns Switching Energy: 1.81mJ (on), 2.02mJ (off) Gate Charge: 550 nC Part Status: Active Current - Collector (Ic) (Max): 83 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 300 A Power - Max: 549 W | auf Bestellung 240 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
| IKY75N120CH7XKSA1 | Infineon Technologies | IGBT Transistors INDUSTRY 14 | auf Bestellung 422 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
| IKY75N120CH7XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 1200V 83A 549W 4-Pin(4+Tab) TO-247 Tube | Produkt ist nicht verfügbar | |||||||||||||||
| IKY75N120CS6 | Infineon Technologies | Infineon INDUSTRY 14 | Produkt ist nicht verfügbar | |||||||||||||||
| IKY75N120CS6XKSA1 | Infineon Technologies | Description: IGBT TRENCH FS 1200V 150A TO247 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 205 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Supplier Device Package: PG-TO247-4-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 32ns/300ns Switching Energy: 2.2mJ (on), 2.95mJ (off) Test Condition: 600V, 75A, 4Ohm, 15V Gate Charge: 530 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 300 A Power - Max: 880 W | auf Bestellung 258 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
| IKY75N120CS6XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 1200V 150A 880000mW 4-Pin(4+Tab) TO-247 Tube | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IKY75N120CS6XKSA1 | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 440W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 530nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| IKY75N120CS6XKSA1 | INFINEON TECHNOLOGIES | Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 440W; TO247PLUS-4 Type of transistor: IGBT Technology: TRENCHSTOP™ 6 Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 440W Case: TO247PLUS-4 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 530nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode | Produkt ist nicht verfügbar | |||||||||||||||
| IKY75N120CS6XKSA1 | Infineon Technologies | Trans IGBT Chip N-CH 1200V 150A 880000mW 4-Pin(4+Tab) TO-247 Tube | auf Bestellung 1489 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IKY75N120CS6XKSA1 | INFINEON | Description: INFINEON - IKY75N120CS6XKSA1 - IGBT, 150 A, 1.85 V, 880 W, 1.2 kV, TO-247, 4 Pin(s) Kollektor-Emitter-Sättigungsspannung: 1.85 MSL: MSL 1 - unbegrenzt Verlustleistung: 880 Bauform - Transistor: TO-247 Anzahl der Pins: 4 Produktpalette: TRENCHSTOP IGBT6 Kollektor-Emitter-Spannung, max.: 1.2 Betriebstemperatur, max.: 175 Kontinuierlicher Kollektorstrom: 150 SVHC: No SVHC (08-Jul-2021) | auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| IKY75N120CS6XKSA1 | Infineon Technologies | IGBT Transistors INDUSTRY 14 | auf Bestellung 571 Stücke: Lieferzeit 14-28 Tag (e) |
|