Produkte > ISG
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt |
|---|---|---|---|---|
| ISG0505A | XP Power | Isolated DC/DC Converters DC-DC, 1W SURFACE MOUNT, REGULATED | Produkt ist nicht verfügbar | |
| ISG0505A | XP Power | Description: DC DC CONVERTER 5V 1W | Produkt ist nicht verfügbar | |
| ISG0505A-TR | XP Power | Isolated DC/DC Converters DC-DC, 1W SURFACE MOUNT, REGULATED | Produkt ist nicht verfügbar | |
| ISG0614N06NM5HATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | Produkt ist nicht verfügbar | |
| ISG0614N06NM5HATMA1 | Infineon Technologies | Description: ISG0614N06NM5HATMA1 Packaging: Cut Tape (CT) Package / Case: 10-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 167W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 233A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 30V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Vgs(th) (Max) @ Id: 3.3V @ 86µA Supplier Device Package: PG-VITFN-10-1 | Produkt ist nicht verfügbar | |
| ISG0614N06NM5HATMA1 | Infineon Technologies | SP005575180 | Produkt ist nicht verfügbar | |
| ISG0614N06NM5HATMA1 | Infineon Technologies | Description: ISG0614N06NM5HATMA1 Packaging: Tape & Reel (TR) Package / Case: 10-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 167W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 233A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 30V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Vgs(th) (Max) @ Id: 3.3V @ 86µA Supplier Device Package: PG-VITFN-10-1 | Produkt ist nicht verfügbar | |
| ISG0614N06NM5HSCATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | Produkt ist nicht verfügbar | |
| ISG0614N06NM5HSCATMA1 | Infineon Technologies | Description: ISG0614N06NM5HSCATMA1 Packaging: Tape & Reel (TR) Package / Case: 10-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 167W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 233A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 30V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Vgs(th) (Max) @ Id: 3.3V @ 86µA Supplier Device Package: PG-WHITFN-10-1 | Produkt ist nicht verfügbar | |
| ISG0614N06NM5HSCATMA1 | Infineon Technologies | Description: ISG0614N06NM5HSCATMA1 Packaging: Cut Tape (CT) Package / Case: 10-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 167W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 233A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 30V Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V Vgs(th) (Max) @ Id: 3.3V @ 86µA Supplier Device Package: PG-WHITFN-10-1 | Produkt ist nicht verfügbar | |
| ISG0616N10NM5HSC | Infineon Technologies | ISG0616N10NM5HSC | Produkt ist nicht verfügbar | |
| ISG1411 | IMAGIS BGA 13+ | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||
| ISG2B422FP-08 | auf Bestellung 576 Stücke: Lieferzeit 21-28 Tag (e) | |||
| ISG4100 | IMAGIS BGA 13+ | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | ||
| ISG4A442FJ-7A | 1 | auf Bestellung 14 Stücke: Lieferzeit 21-28 Tag (e) | ||
| ISGAL22LV10C-7LJ | auf Bestellung 700 Stücke: Lieferzeit 21-28 Tag (e) |