Produkte > NVG
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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| NVG10B221M-5V6 | auf Bestellung 144000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| NVG10B221N-5V6 | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| NVG45AD2025 | KYOCERA AVX | KYOCERA AVX Components | auf Bestellung 1 Stücke: Lieferzeit 14-28 Tag (e) |
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| NVG800A75L4DSB | ON Semiconductor | VE-Trac Dual, IGBT Module | Produkt ist nicht verfügbar | |||||||||||||||
| NVG800A75L4DSC | onsemi | Description: IC PWR MOD 750V 800A AHPM15 Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Type: IGBT Configuration: Half Bridge Voltage - Isolation: 4200Vrms Current: 800 A Voltage: 750 V | Produkt ist nicht verfügbar | |||||||||||||||
| NVG800A75L4DSC | ON Semiconductor | Half-Bridge Power Module | Produkt ist nicht verfügbar | |||||||||||||||
| NVG800A75L4DSC | onsemi | IGBT Modules DUALSIDE COOLING PWR | Produkt ist nicht verfügbar | |||||||||||||||
| NVG800A75L4DSC EVK | onsemi | Power Management IC Development Tools | Produkt ist nicht verfügbar | |||||||||||||||
| NVG800A75L4DSC-EVK | ON Semiconductor | VE-Trac Dual EZ Kit | Produkt ist nicht verfügbar | |||||||||||||||
| NVG800A75L4DSC-Z008 | onsemi | Description: DUAL SIDE COOLING POWER MODULE Packaging: Tube Package / Case: Module Mounting Type: Chassis Mount Type: IGBT Configuration: Half Bridge Voltage - Isolation: 4200Vrms Current: 800 A Voltage: 750 V | Produkt ist nicht verfügbar | |||||||||||||||
| NVG800A75L4DSC2 | onsemi | Description: IC PWR MOD 750V 800A AHPM15 Packaging: Tube Package / Case: 15-PowerDIP Module (2.441", 62.00mm) Mounting Type: Through Hole Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 600A NTC Thermistor: No Supplier Device Package: AHPM15-CEA Current - Collector (Ic) (Max): 550 A Voltage - Collector Emitter Breakdown (Max): 750 V Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 43000 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| NVGB1306L-12-F | STANEY | LED | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| NVGS3130NT1G | ON Semiconductor | MOSFET NFET TSOP6 20V 5.6A 24MOH | Produkt ist nicht verfügbar | |||||||||||||||
| NVGS3130NT1G | ON Semiconductor | Description: MOSFET N-CH 20V 4.2A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||
| NVGS3130NT1G | ON Semiconductor | Trans MOSFET N-CH 20V 5.6A Automotive 6-Pin TSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NVGS3441T1G | onsemi | Description: MOSFET P-CH 20V 1.65A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||
| NVGS3441T1G | onsemi | MOSFET PFET 20V 2.35A 900 | Produkt ist nicht verfügbar | |||||||||||||||
| NVGS3441T1G | onsemi | Description: MOSFET P-CH 20V 1.65A 6TSOP | Produkt ist nicht verfügbar | |||||||||||||||
| NVGS3443T1G | onsemi | Description: MOSFET P-CH 20V 3.1A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Obsolete Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 5 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
| NVGS3443T1G | ON Semiconductor | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| NVGS3443T1G | ON Semiconductor | MOSFET PFET 20V 2A 0.065R | auf Bestellung 2566 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||
| NVGS4111PT1G | onsemi | Description: MOSFET P-CH 30V 3.7A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 10V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 1898 Stücke: Lieferzeit 21-28 Tag (e) |
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| NVGS4111PT1G | ON Semiconductor | Trans MOSFET P-CH 30V 3.7A Automotive 6-Pin TSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NVGS4111PT1G | onsemi | Description: MOSFET P-CH 30V 3.7A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 10V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
| NVGS4111PT1G | ON Semiconductor | auf Bestellung 2580 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| NVGS4111PT1G | onsemi | MOSFET PFET TSOP6 30V 4.7A 60MOH | auf Bestellung 4921 Stücke: Lieferzeit 14-28 Tag (e) |
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| NVGS4141NT1G | ON Semiconductor | Trans MOSFET N-CH 30V 5A Automotive 6-Pin TSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NVGS4141NT1G | ON Semiconductor | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| NVGS4141NT1G | ON Semiconductor | MOSFET NFET TSOP6 30V 7A 0.030R | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||
| NVGS4141NT1G | onsemi | Description: MOSFET N-CH 30V 3.5A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 24 V Qualification: AEC-Q101 | auf Bestellung 1841 Stücke: Lieferzeit 21-28 Tag (e) |
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| NVGS4141NT1G | onsemi | Description: MOSFET N-CH 30V 3.5A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 24 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
| NVGS4141NT1G | onsemi | MOSFET NFET TSOP6 30V 7A 0.030R | auf Bestellung 2950 Stücke: Lieferzeit 14-28 Tag (e) |
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| NVGS5120PT1G | onsemi | Description: MOSFET P-CH 60V 1.8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 111mOhm @ 2.9A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 585000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NVGS5120PT1G | onsemi | MOSFET PFET TSOP6 60V 2.5A 111MO | auf Bestellung 235168 Stücke: Lieferzeit 14-28 Tag (e) |
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| NVGS5120PT1G | onsemi | Description: MOSFET P-CH 60V 1.8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 111mOhm @ 2.9A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 18.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 942 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 587385 Stücke: Lieferzeit 21-28 Tag (e) |
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| NVGS5120PT1G | ON Semiconductor | auf Bestellung 10286 Stücke: Lieferzeit 21-28 Tag (e) |