Produkte > PJW

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PJW-72
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PJW1NA60A_R2_00001PanjitMOSFET /1NA60A/TR/13"/HF/2.5K/SOT-223/MOS/SOT/NFET-600TWMN/NF600-QI41/PJ/SOT223-AS05/SOT223-AS06/SOT223-AS09
auf Bestellung 726 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.04 EUR
10+0.90 EUR
100+0.68 EUR
500+0.53 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PJW1NA60B_R2_00001PanjitMOSFET /1NA60B/TR/13"/HF/2.5K/SOT-223/MOS/SOT/NFET-600TWMN//PJ/SOT223-AS18/PJx1NA60B-AS29/SOT223-AS09
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW2P10A_R2_00001Panjit International Inc.Description: 100V P-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
auf Bestellung 2646 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
28+0.65 EUR
100+0.48 EUR
500+0.38 EUR
1000+0.29 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
PJW2P10A_R2_00001Panjit International Inc.Description: 100V P-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW2P10A_R2_00001PanjitMOSFET 100V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW363010LHammond ManufacturingEnclosures, Boxes & Cases Wallmount/TwistLatch 10.2x30.3x36.3" 4X
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW363010LHammond ManufacturingDescription: BOX FIBERGLASS 36.25"L X 30.25"W
Packaging: Box
Features: Mounting Flange, Stainless Steel Hinges, Twist Latch
Color: Gray
Size / Dimension: 36.250" L x 30.250" W (920.75mm x 768.35mm)
Material: Fiberglass/Polyester
Height: 12.000" (304.80mm)
Design: Hinged Door, Lid
Ratings: IP66, NEMA 1,2,3,4,4X,12,13, UL-508
Container Type: Box
Area (L x W): 1097in² (7077cm²)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW363014LHammond ManufacturingDescription: BOX FIBERGLASS GRY 36.25"X30.25"
Packaging: Case
Features: Mounting Flange, Stainless Steel Hinges, Twist Latch
Color: Gray
Size / Dimension: 36.250" L x 30.250" W (920.75mm x 768.35mm)
Material: Fiberglass/Polyester
Height: 16.000" (406.40mm)
Design: Hinged Door, Lid
Ratings: IP66, NEMA 1,2,3,4,4X,12,13, UL-508
Container Type: Box
Area (L x W): 1097in² (7077cm²)
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW363014LHammond ManufacturingElectrical Enclosures N4X Wallmount Encl - 36.25 x 30.25 x 14.13 - Fiberglass
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW363014L3PTHammond ManufacturingElectrical Enclosures NON MET WALLMT 36X30X14.13 3PT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW363014L3PTHammond ManufacturingDescription: N4X WALLMOUNT ENCL 3PT - 36.25 X
Packaging: Bulk
Color: Gray
Size / Dimension: 31.150" L x 14.140" W (791.21mm x 359.16mm)
Material: Fiberglass/Polyester
Height: 40.512" (1029.00mm)
Design: Hinged Door
Ratings: IP66, NEMA 1,2,3,4,4X,12,13, UL 508A
Container Type: Enclosure
Area (L x W): 440in² (2839cm²)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PJW363610LHammond ManufacturingDescription: BOX FIBERGLASS GRY 36.25"X36.25"
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PJW363610LHammond ManufacturingElectrical Enclosures N4X Wallmount Encl - 36.25 x 36.25 x 10.13 - Fiberglass
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW363614LHammond ManufacturingDescription: BOX FIBERGLASS GRY 36.25"X36.25"
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW363614LHammond ManufacturingElectrical Enclosures N4X Wallmount Encl - 36.25 x 36.25 x 14.13 - Fiberglass
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW363614L3PTHammond ManufacturingDescription: N4X WALLMOUNT ENCL 3PT - 36.25 X
Packaging: Bulk
Color: Gray
Size / Dimension: 37.150" L x 16.030" W (943.61mm x 407.16mm)
Material: Fiberglass/Polyester
Height: 40.512" (1029.00mm)
Design: Hinged Door
Ratings: IP66, NEMA 1,2,3,4,4X,12,13, UL 508A
Container Type: Enclosure
Area (L x W): 596in² (3845cm²)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW3N10A_R2_00001PanjitMOSFET PJ/W3N10A/TR/13"/HF/2.5K/SOT-223/MOS/SOT/NFET-100TWMN//PJ/SOT223-AS34/PJW3N10A-ASQ3/SOT223-AS09
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW3N10A_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.27 EUR
5000+0.25 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
PJW3N10A_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
auf Bestellung 12480 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
27+0.65 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.30 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
PJW3P06A-AU_R2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 7003 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
21+0.84 EUR
100+0.59 EUR
500+0.46 EUR
1000+0.37 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
PJW3P06A-AU_R2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.33 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
PJW3P06A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW3P06A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW3P06A_R2_00001PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 2365 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.08 EUR
10+0.99 EUR
100+0.67 EUR
1000+0.39 EUR
2500+0.22 EUR
10000+0.19 EUR
25000+0.18 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PJW3P10A_R2_00001PanJit SemiconductorPJW3P10A-R2 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW3P10A_R2_00001Panjit International Inc.Description: 100V P-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.6A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1419 pF @ 25 V
auf Bestellung 8837 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
20+0.91 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.40 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
PJW3P10A_R2_00001Panjit International Inc.Description: 100V P-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.6A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1419 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.36 EUR
5000+0.34 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
PJW483610LHammond ManufacturingDescription: BOX FIBERGLASS GRY 48.25"X36.25"
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PJW483610LHammond ManufacturingElectrical Enclosures N4X Wallmount Encl - 48.25 x 36.25 x 10.13 - Fiberglass
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW483610L3PTHammond ManufacturingElectrical Enclosures N4X Wallmount Encl 3PT - 48.25 x 36.25 x 10.13 - Fiberglass
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW483614LHammond ManufacturingElectrical Enclosures N4X Wallmount Encl - 48.25 x 36.25 x 14.13 - Fiberglass
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW483614LHammond ManufacturingDescription: BOX FIBERGLASS GRY 48.25"X36.25"
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PJW483614L3PTHammond ManufacturingDescription: N4X WALLMOUNT ENCL 3PT - 48.25 X
Packaging: Bulk
Color: Gray
Size / Dimension: 37.150" L x 16.030" W (943.61mm x 407.16mm)
Material: Fiberglass/Polyester
Height: 52.520" (1334.00mm)
Design: Hinged Door
Ratings: IP66, NEMA 1,2,3,4,4X,12,13, UL 508A
Container Type: Enclosure
Area (L x W): 596in² (3845cm²)
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A-AU_R2_000A1PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 5117 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.11 EUR
26+0.68 EUR
100+0.44 EUR
500+0.33 EUR
1000+0.30 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.26 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A-AU_R2_000A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 42500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A-AU_R2_000A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A-R2-00001PanjitMOSFETs SOT-223/MOS/SOT/NFET-60TWMN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.18 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A_R2_00001PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 3593 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.72 EUR
10+0.48 EUR
100+0.26 EUR
1000+0.23 EUR
2500+0.18 EUR
10000+0.17 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A_R2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 42500 Stücke
Produkt ist nicht verfügbar
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PJW4N06A_R2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJW4N06A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
auf Bestellung 3149 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
30+0.60 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
Mindestbestellmenge: 21
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PJW4NFSHammond ManufacturingDescription: MOUNTING FEET SS 6X6-20X16 PJ
auf Bestellung 22086 Stücke:
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PJW4NFSHammondStainless Mounting Feet For Pj Series
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PJW4NFSHammond ManufacturingElectrical Enclosure Accessories 304SS Feet/Pack4 Fits 6x6 to 20x16
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PJW4NLSHammondStainless Mounting Feet For Pj Series
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PJW4NLSHammond ManufacturingElectrical Enclosure Accessories 304SS Feet/Pack4 Fits 24x20 to 30x24
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PJW4NLSHammond ManufacturingDescription: MOUNTING FEET SS 24X20 - 30X24
Packaging: Box
For Use With/Related Products: PJ Series
Accessory Type: Feet, Leveling
auf Bestellung 25 Stücke:
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5+33.92 EUR
10+33.60 EUR
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PJW4NUFSHammond ManufacturingElectrical Enclosure Accessories Polycarb. Feet/Pack4 Fits 6x6 to 14x12
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PJW4NUFSHammond ManufacturingDescription: MOULDED POLY FEET 6X6-14X12 PJU
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PJW4NULFSHammond ManufacturingDescription: ENCLOSURE POLYESTER WALLMOUNT
auf Bestellung 12 Stücke:
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PJW4NULFSHammond ManufacturingElectrical Enclosure Accessories Polycarb. Feet/Pack4 Fits 16x14 to 20x16
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PJW4P06A-AU_R2_000A1PanJit SemiconductorPJW4P06A-AU-R2 SMD P channel transistors
auf Bestellung 2683 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
307+0.23 EUR
325+0.22 EUR
2500+0.21 EUR
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PJW4P06A-AU_R2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
auf Bestellung 4518 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
27+0.67 EUR
100+0.40 EUR
500+0.37 EUR
1000+0.25 EUR
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PJW4P06A-AU_R2_000A1PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 46201 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.02 EUR
10+0.65 EUR
100+0.32 EUR
1000+0.29 EUR
2500+0.22 EUR
10000+0.20 EUR
50000+0.19 EUR
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PJW4P06A-AU_R2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.23 EUR
Mindestbestellmenge: 2500
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PJW4P06A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
auf Bestellung 1684 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.14 EUR
25+0.71 EUR
100+0.46 EUR
500+0.35 EUR
1000+0.31 EUR
Mindestbestellmenge: 16
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PJW4P06A_R2_00001PanJit SemiconductorPJW4P06A-R2 SMD P channel transistors
auf Bestellung 1254 Stücke:
Lieferzeit 7-14 Tag (e)
132+0.54 EUR
400+0.18 EUR
424+0.17 EUR
Mindestbestellmenge: 132
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PJW4P06A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4P06A_R2_00001PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 37865 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.02 EUR
10+0.67 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.30 EUR
2500+0.23 EUR
10000+0.22 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
PJW5N06A-AU-R2-000A1PanjitArray
Produkt ist nicht verfügbar
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PJW5N06A-AU_R2_000A1PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW5N06A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 3.72W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW5N06A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 3.72W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW5N06A-R2-00001PanjitArray
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW5N06A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW5N06A_R2_00001PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW5N06A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Produkt ist nicht verfügbar
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PJW5N10-AU_R2_000A1Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW5N10-AU_R2_000A1Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
Produkt ist nicht verfügbar
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PJW5N10A_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW5N10A_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Produkt ist nicht verfügbar
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PJW5N10_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW5N10_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
Produkt ist nicht verfügbar
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PJW5P03_R2_00001PanjitMOSFET /W5P03/TR/13"/HF/2.5K/SOT-223/MOS/SOT/NFET-30TWMP//PJ/SOT223-AS20/PJW5P03-ASD6/SOT223-AS09
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.72 EUR
10+0.60 EUR
100+0.41 EUR
500+0.31 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PJW5P06A-AU_R2_000A1PanJit SemiconductorPJW5P06A-AU-R2 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW5P06A-AU_R2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
auf Bestellung 3408 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.02 EUR
20+0.89 EUR
100+0.61 EUR
500+0.51 EUR
1000+0.44 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
PJW5P06A-AU_R2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.39 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
PJW5P06A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.29 EUR
5000+0.28 EUR
Mindestbestellmenge: 2500
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PJW5P06A_R2_00001PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 4539 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.86 EUR
10+0.73 EUR
100+0.54 EUR
500+0.43 EUR
1000+0.33 EUR
2500+0.28 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PJW5P06A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
auf Bestellung 7380 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
24+0.73 EUR
100+0.51 EUR
500+0.40 EUR
1000+0.32 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
PJW603610LHammond ManufacturingElectrical Enclosures N4X Wallmount Encl - 60.25 x 36.25 x 10.13 - Fiberglass
Produkt ist nicht verfügbar
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PJW603610LHammond ManufacturingDescription: BOX FIBERGLASS GRY 60.25"X36.25"
auf Bestellung 2 Stücke:
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PJW603610L3PTHammond ManufacturingElectrical Enclosures N4X Wallmount Encl 3PT - 60.25 x 36.25 x 10.13 - Fiberglass
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PJW603614LHammond ManufacturingElectrical Enclosures N4X Wallmount Encl - 60.25 x 36.25 x 14.13 - Fiberglass
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PJW603614LHammond ManufacturingDescription: BOX FIBERGLASS GRY 60.25"X36.25"
auf Bestellung 3 Stücke:
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PJW603614L3PTHammond ManufacturingDescription: N4X WALLMOUNT ENCL 3PT - 60.25 X
Packaging: Bulk
Color: Gray
Size / Dimension: 37.150" L x 16.030" W (943.61mm x 407.16mm)
Material: Fiberglass/Polyester
Height: 64.500" (1638.30mm)
Design: Hinged Door
Ratings: IP66, NEMA 1,2,3,4,4X,12,13, UL 508A
Container Type: Enclosure
Area (L x W): 596in² (3845cm²)
Produkt ist nicht verfügbar
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PJW720
auf Bestellung 220 Stücke:
Lieferzeit 21-28 Tag (e)
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PJW7N04-AU_R2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJW7N04-AU_R2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW7N04-R2-00001PanjitMOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW7N04_R2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW7N04_R2_00001PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW7N06A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 1075 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
15+1.18 EUR
100+0.90 EUR
500+0.71 EUR
1000+0.57 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
PJW7N06A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW7N06A-R2-00001PanjitMOSFET SOT-223/MOS/SOT/NFET-60TWMN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW7N06A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.33 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
PJW7N06A_R2_00001PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW7N06A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
auf Bestellung 3680 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
22+0.83 EUR
100+0.54 EUR
500+0.41 EUR
1000+0.37 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PJW8N03_R2_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW8N03_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.22 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
PJW8N03_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 4940 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
25+0.73 EUR
100+0.46 EUR
500+0.31 EUR
1000+0.24 EUR
Mindestbestellmenge: 19
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PJWI1P6150UADIP
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
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PJWI1P6150UA
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
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PJWILD720M2
auf Bestellung 782 Stücke:
Lieferzeit 21-28 Tag (e)
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PJWIP4440MA
auf Bestellung 32 Stücke:
Lieferzeit 21-28 Tag (e)
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PJWIP4440MA96
auf Bestellung 32 Stücke:
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PJWIP4440MADIP
auf Bestellung 32 Stücke:
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PJWIP6150UNAT97 DIP
auf Bestellung 170 Stücke:
Lieferzeit 21-28 Tag (e)
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