Produkte > PJW

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
PJW-72
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
PJW1NA60A_R2_00001PanjitMOSFET /1NA60A/TR/13"/HF/2.5K/SOT-223/MOS/SOT/NFET-600TWMN/NF600-QI41/PJ/SOT223-AS05/SOT223-AS06/SOT223-AS09
auf Bestellung 726 Stücke:
Lieferzeit 14-28 Tag (e)
34+1.54 EUR
39+ 1.34 EUR
100+ 1 EUR
500+ 0.78 EUR
Mindestbestellmenge: 34
PJW1NA60B_R2_00001PanjitMOSFET /1NA60B/TR/13"/HF/2.5K/SOT-223/MOS/SOT/NFET-600TWMN//PJ/SOT223-AS18/PJx1NA60B-AS29/SOT223-AS09
Produkt ist nicht verfügbar
PJW2P10A_R2_00001Panjit International Inc.Description: 100V P-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
auf Bestellung 2646 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.12 EUR
28+ 0.96 EUR
100+ 0.72 EUR
500+ 0.56 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 24
PJW2P10A_R2_00001PanjitMOSFET 100V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJW2P10A_R2_00001Panjit International Inc.Description: 100V P-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 448 pF @ 15 V
Produkt ist nicht verfügbar
PJW363010LHammond ManufacturingDescription: BOX FIBERGLASS GRY 36.25"X30.25"
Packaging: Box
Features: Mounting Flange, Stainless Steel Hinges, Twist Latch
Color: Gray
Size / Dimension: 36.250" L x 30.250" W (920.75mm x 768.35mm)
Material: Fiberglass/Polyester
Height: 12.000" (304.80mm)
Design: Hinged Door, Lid
Ratings: IP66, NEMA 1,2,3,4,4X,12,13, UL-508
Container Type: Box
Area (L x W): 1097in² (7077cm²)
Produkt ist nicht verfügbar
PJW363010LHammond ManufacturingEnclosures, Boxes & Cases Wallmount/TwistLatch 10.2x30.3x36.3" 4X
Produkt ist nicht verfügbar
PJW363014LHammond ManufacturingDescription: BOX FIBERGLASS GRY 36.25"X30.25"
Features: Mounting Flange, Stainless Steel Hinges, Twist Latch
Packaging: Case
Color: Gray
Size / Dimension: 36.250" L x 30.250" W (920.75mm x 768.35mm)
Material: Fiberglass/Polyester
Height: 16.000" (406.40mm)
Design: Hinged Door, Lid
Ratings: IP66, NEMA 1,2,3,4,4X,12,13, UL-508
Container Type: Box
Area (L x W): 1097in² (7077cm²)
Part Status: Active
Produkt ist nicht verfügbar
PJW363014LHammond ManufacturingElectrical Enclosures N4X Wallmount Encl - 36.25 x 30.25 x 14.13 - Fiberglass
Produkt ist nicht verfügbar
PJW363014L3PTHammond ManufacturingElectrical Enclosures N4X Wallmount Encl 3PT - 36.25 x 30.25 x 14.13 - Fiberglass
Produkt ist nicht verfügbar
PJW363610LHammond ManufacturingDescription: BOX FIBERGLASS GRY 36.25"X36.25"
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)
PJW363610LHammond ManufacturingElectrical Enclosures N4X Wallmount Encl - 36.25 x 36.25 x 10.13 - Fiberglass
Produkt ist nicht verfügbar
PJW363614LHammond ManufacturingElectrical Enclosures N4X Wallmount Encl - 36.25 x 36.25 x 14.13 - Fiberglass
Produkt ist nicht verfügbar
PJW363614LHammond ManufacturingDescription: BOX FIBERGLASS GRY 36.25"X36.25"
Produkt ist nicht verfügbar
PJW3N10A_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
auf Bestellung 12480 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.12 EUR
27+ 0.97 EUR
100+ 0.72 EUR
500+ 0.57 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 24
PJW3N10A_R2_00001PanjitMOSFET PJ/W3N10A/TR/13"/HF/2.5K/SOT-223/MOS/SOT/NFET-100TWMN//PJ/SOT223-AS34/PJW3N10A-ASQ3/SOT223-AS09
Produkt ist nicht verfügbar
PJW3N10A_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 310mOhm @ 2.2A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 30 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.4 EUR
5000+ 0.37 EUR
Mindestbestellmenge: 2500
PJW3P06A-AU_R2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 7003 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.46 EUR
21+ 1.25 EUR
100+ 0.87 EUR
500+ 0.68 EUR
1000+ 0.55 EUR
Mindestbestellmenge: 18
PJW3P06A-AU_R2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.49 EUR
Mindestbestellmenge: 2500
PJW3P06A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJW3P06A_R2_00001PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 2490 Stücke:
Lieferzeit 14-28 Tag (e)
43+1.22 EUR
54+ 0.98 EUR
100+ 0.67 EUR
500+ 0.5 EUR
1000+ 0.39 EUR
2500+ 0.33 EUR
5000+ 0.32 EUR
Mindestbestellmenge: 43
PJW3P06A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJW3P10A_R2_00001Panjit International Inc.Description: 100V P-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.6A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1419 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.58 EUR
Mindestbestellmenge: 2500
PJW3P10A_R2_00001PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar
PJW3P10A_R2_00001PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET
Type of transistor: P-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJW3P10A_R2_00001Panjit International Inc.Description: 100V P-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.6A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1419 pF @ 25 V
auf Bestellung 6609 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.64 EUR
19+ 1.4 EUR
100+ 1.05 EUR
500+ 0.82 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 16
PJW483610LHammond ManufacturingDescription: BOX FIBERGLASS GRY 48.25"X36.25"
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
PJW483610LHammond ManufacturingElectrical Enclosures N4X Wallmount Encl - 48.25 x 36.25 x 10.13 - Fiberglass
Produkt ist nicht verfügbar
PJW483610L3PTHammond ManufacturingElectrical Enclosures N4X Wallmount Encl 3PT - 48.25 x 36.25 x 10.13 - Fiberglass
Produkt ist nicht verfügbar
PJW483614LHammond ManufacturingElectrical Enclosures N4X Wallmount Encl - 48.25 x 36.25 x 14.13 - Fiberglass
Produkt ist nicht verfügbar
PJW483614LHammond ManufacturingDescription: BOX FIBERGLASS GRY 48.25"X36.25"
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)
PJW4N06A-AU_R2_000A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJW4N06A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 6035 Stücke:
Lieferzeit 21-28 Tag (e)
27+0.99 EUR
31+ 0.85 EUR
100+ 0.59 EUR
500+ 0.46 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 27
PJW4N06A-AU_R2_000A1PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJW4N06A-AU_R2_000A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJW4N06A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 3.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.33 EUR
Mindestbestellmenge: 2500
PJW4N06A-R2-00001PanjitMOSFET SOT-223/MOS/SOT/NFET-60TWMN
Produkt ist nicht verfügbar
PJW4N06A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
auf Bestellung 5823 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
31+ 0.84 EUR
100+ 0.51 EUR
500+ 0.47 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 24
PJW4N06A_R2_00001PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 1181 Stücke:
Lieferzeit 14-28 Tag (e)
48+1.09 EUR
59+ 0.89 EUR
100+ 0.61 EUR
1000+ 0.35 EUR
2500+ 0.3 EUR
10000+ 0.27 EUR
25000+ 0.25 EUR
Mindestbestellmenge: 48
PJW4N06A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.29 EUR
Mindestbestellmenge: 2500
PJW4N06A_R2_00001PanJit SemiconductorPJW4N06A-R2 SMD N channel transistors
Produkt ist nicht verfügbar
PJW4NFSHammondStainless Mounting Feet For Pj Series
Produkt ist nicht verfügbar
PJW4NFSHammond ManufacturingDescription: MOUNTING FEET SS 6X6-20X16 PJ
auf Bestellung 22086 Stücke:
Lieferzeit 21-28 Tag (e)
PJW4NFSHammond ManufacturingElectrical Enclosure Accessories 304SS Feet/Pack4 Fits 6x6 to 20x16
Produkt ist nicht verfügbar
PJW4NLSHammond ManufacturingDescription: MOUNTING FEET SS 24X20 - 30X24
auf Bestellung 39 Stücke:
Lieferzeit 21-28 Tag (e)
PJW4NLSHammond ManufacturingElectrical Enclosure Accessories 304SS Feet/Pack4 Fits 24x20 to 30x24
Produkt ist nicht verfügbar
PJW4NLSHammondStainless Mounting Feet For Pj Series
Produkt ist nicht verfügbar
PJW4NUFSHammond ManufacturingDescription: MOULDED POLY FEET 6X6-14X12 PJU
Produkt ist nicht verfügbar
PJW4NUFSHammond ManufacturingElectrical Enclosure Accessories Polycarb. Feet/Pack4 Fits 6x6 to 14x12
Produkt ist nicht verfügbar
PJW4NULFSHammond ManufacturingDescription: ENCLOSURE POLYESTER WALLMOUNT
auf Bestellung 12 Stücke:
Lieferzeit 21-28 Tag (e)
PJW4NULFSHammond ManufacturingElectrical Enclosure Accessories Polycarb. Feet/Pack4 Fits 16x14 to 20x16
Produkt ist nicht verfügbar
PJW4P06A-AU_R2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.34 EUR
Mindestbestellmenge: 2500
PJW4P06A-AU_R2_000A1PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 3423 Stücke:
Lieferzeit 14-28 Tag (e)
39+1.34 EUR
47+ 1.11 EUR
100+ 0.76 EUR
500+ 0.57 EUR
1000+ 0.43 EUR
2500+ 0.37 EUR
Mindestbestellmenge: 39
PJW4P06A-AU_R2_000A1PanJit SemiconductorPJW4P06A-AU-R2 SMD P channel transistors
auf Bestellung 1720 Stücke:
Lieferzeit 7-14 Tag (e)
70+1.03 EUR
305+ 0.23 EUR
323+ 0.22 EUR
5000+ 0.21 EUR
Mindestbestellmenge: 70
PJW4P06A-AU_R2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
auf Bestellung 4518 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.27 EUR
27+ 0.99 EUR
100+ 0.59 EUR
500+ 0.55 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 21
PJW4P06A_R2_00001PanJit SemiconductorPJW4P06A-R2 SMD P channel transistors
Produkt ist nicht verfügbar
PJW4P06A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.35 EUR
Mindestbestellmenge: 2500
PJW4P06A_R2_00001PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 61580 Stücke:
Lieferzeit 14-28 Tag (e)
52+1.02 EUR
61+ 0.86 EUR
100+ 0.64 EUR
500+ 0.5 EUR
1000+ 0.4 EUR
2500+ 0.34 EUR
10000+ 0.31 EUR
Mindestbestellmenge: 52
PJW4P06A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
auf Bestellung 6157 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
30+ 0.88 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 25
PJW5N06A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJW5N06A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJW5N06A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJW5N06A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJW5N10-AU_R2_000A1Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
Produkt ist nicht verfügbar
PJW5N10-AU_R2_000A1Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 8W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
Produkt ist nicht verfügbar
PJW5N10A_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Produkt ist nicht verfügbar
PJW5N10A_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 4A, 10V
Power Dissipation (Max): 3.1W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Produkt ist nicht verfügbar
PJW5N10_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
Produkt ist nicht verfügbar
PJW5N10_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), 5A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 707 pF @ 30 V
Produkt ist nicht verfügbar
PJW5P03_R2_00001PanjitMOSFET /W5P03/TR/13"/HF/2.5K/SOT-223/MOS/SOT/NFET-30TWMP//PJ/SOT223-AS20/PJW5P03-ASD6/SOT223-AS09
auf Bestellung 3 Stücke:
Lieferzeit 14-28 Tag (e)
49+1.07 EUR
59+ 0.88 EUR
100+ 0.6 EUR
500+ 0.45 EUR
Mindestbestellmenge: 49
PJW5P06A-AU_R2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
auf Bestellung 3408 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.51 EUR
20+ 1.31 EUR
100+ 0.91 EUR
500+ 0.76 EUR
1000+ 0.64 EUR
Mindestbestellmenge: 18
PJW5P06A-AU_R2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.57 EUR
Mindestbestellmenge: 2500
PJW5P06A-AU_R2_000A1PanJit SemiconductorPJW5P06A-AU-R2 SMD P channel transistors
Produkt ist nicht verfügbar
PJW5P06A_R2_00001PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 4539 Stücke:
Lieferzeit 14-28 Tag (e)
42+1.26 EUR
49+ 1.07 EUR
100+ 0.8 EUR
500+ 0.63 EUR
1000+ 0.49 EUR
2500+ 0.41 EUR
Mindestbestellmenge: 42
PJW5P06A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
auf Bestellung 7380 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.27 EUR
24+ 1.08 EUR
100+ 0.76 EUR
500+ 0.59 EUR
1000+ 0.48 EUR
Mindestbestellmenge: 21
PJW5P06A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.43 EUR
5000+ 0.41 EUR
Mindestbestellmenge: 2500
PJW603610LHammond ManufacturingElectrical Enclosures N4X Wallmount Encl - 60.25 x 36.25 x 10.13 - Fiberglass
Produkt ist nicht verfügbar
PJW603610LHammond ManufacturingDescription: BOX FIBERGLASS GRY 60.25"X36.25"
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
PJW603610L3PTHammond ManufacturingElectrical Enclosures N4X Wallmount Encl 3PT - 60.25 x 36.25 x 10.13 - Fiberglass
Produkt ist nicht verfügbar
PJW603614LHammond ManufacturingDescription: BOX FIBERGLASS GRY 60.25"X36.25"
auf Bestellung 3 Stücke:
Lieferzeit 21-28 Tag (e)
PJW603614LHammond ManufacturingElectrical Enclosures N4X Wallmount Encl - 60.25 x 36.25 x 14.13 - Fiberglass
Produkt ist nicht verfügbar
PJW720
auf Bestellung 220 Stücke:
Lieferzeit 21-28 Tag (e)
PJW7N04-AU_R2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJW7N04-AU_R2_000A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJW7N04-R2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJW7N04_R2_00001PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJW7N04_R2_00001Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 20 V
Produkt ist nicht verfügbar
PJW7N06A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 1075 Stücke:
Lieferzeit 21-28 Tag (e)
14+1.98 EUR
15+ 1.74 EUR
100+ 1.33 EUR
500+ 1.05 EUR
1000+ 0.84 EUR
Mindestbestellmenge: 14
PJW7N06A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJW7N06A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.42 EUR
5000+ 0.4 EUR
Mindestbestellmenge: 2500
PJW7N06A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
21+1.25 EUR
25+ 1.06 EUR
100+ 0.74 EUR
500+ 0.58 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 21
PJW8N03_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.32 EUR
Mindestbestellmenge: 2500
PJW8N03_R2_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJW8N03_R2_00001Panjit International Inc.Description: 30V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 4940 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
25+ 1.08 EUR
100+ 0.67 EUR
500+ 0.46 EUR
1000+ 0.35 EUR
Mindestbestellmenge: 19
PJWI1P6150UADIP
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
PJWI1P6150UA
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
PJWILD720M2
auf Bestellung 782 Stücke:
Lieferzeit 21-28 Tag (e)
PJWIP4440MADIP
auf Bestellung 32 Stücke:
Lieferzeit 21-28 Tag (e)
PJWIP4440MA
auf Bestellung 32 Stücke:
Lieferzeit 21-28 Tag (e)
PJWIP4440MA96
auf Bestellung 32 Stücke:
Lieferzeit 21-28 Tag (e)
PJWIP6150UNAT97 DIP
auf Bestellung 170 Stücke:
Lieferzeit 21-28 Tag (e)