Produkte > RUF

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RUF015N02
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
RUF015N02TLRohm SemiconductorDescription: MOSFET N-CH 20V 1.5A TUMT3
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RUF015N02TLROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 3A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Kind of package: reel; tape
Power dissipation: 0.8W
Polarisation: unipolar
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 3A
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
RUF015N02TLROHMDescription: ROHM - RUF015N02TL - Leistungs-MOSFET, n-Kanal, 20 V, 1.5 A, 0.13 ohm, TUMT, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 20
Dauer-Drainstrom Id: 1.5
Rds(on)-Messspannung Vgs: 4.5
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 800
Bauform - Transistor: TUMT
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.13
Betriebstemperatur, max.: -
Schwellenspannung Vgs: -
SVHC: No SVHC (08-Jul-2021)
auf Bestellung 1445 Stücke:
Lieferzeit 14-21 Tag (e)
RUF015N02TL
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RUF015N02TLRohm SemiconductorDescription: MOSFET N-CH 20V 1.5A TUMT3
auf Bestellung 3565 Stücke:
Lieferzeit 21-28 Tag (e)
RUF015N02TLROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.5A; Idm: 3A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Kind of package: reel; tape
Power dissipation: 0.8W
Polarisation: unipolar
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 3A
Drain-source voltage: 20V
Drain current: 1.5A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
RUF015N02TLROHM SemiconductorMOSFET Med Pwr, Sw MOSFET P Chan, 20V, 1.5A
auf Bestellung 13629 Stücke:
Lieferzeit 14-28 Tag (e)
47+1.11 EUR
54+ 0.98 EUR
100+ 0.68 EUR
500+ 0.53 EUR
1000+ 0.43 EUR
3000+ 0.36 EUR
9000+ 0.34 EUR
Mindestbestellmenge: 47
RUF020N02
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
RUF020N02TLRohm SemiconductorDescription: MOSFET N-CH 20V 2A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
auf Bestellung 78000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.34 EUR
6000+ 0.32 EUR
15000+ 0.29 EUR
30000+ 0.28 EUR
75000+ 0.27 EUR
Mindestbestellmenge: 3000
RUF020N02TL
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RUF020N02TLROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 6A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 6A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±10V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
RUF020N02TLROHM SemiconductorMOSFET Trans MOSFET N-CH 20V 2A
auf Bestellung 8057 Stücke:
Lieferzeit 14-28 Tag (e)
52+1 EUR
60+ 0.87 EUR
100+ 0.65 EUR
500+ 0.51 EUR
1000+ 0.39 EUR
3000+ 0.36 EUR
6000+ 0.34 EUR
Mindestbestellmenge: 52
RUF020N02TLRohm SemiconductorDescription: MOSFET N-CH 20V 2A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
auf Bestellung 86313 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.96 EUR
32+ 0.82 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 28
RUF020N02TLROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 6A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Pulsed drain current: 6A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±10V
On-state resistance: 0.24Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RUF025N02
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
RUF025N02FRATLROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Pulsed drain current: 5A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±10V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
RUF025N02FRATLROHM SemiconductorMOSFET Nch 20V Vds 2.5A 0.08Rds(on) 5Qg
auf Bestellung 5769 Stücke:
Lieferzeit 14-28 Tag (e)
52+1 EUR
61+ 0.87 EUR
100+ 0.65 EUR
500+ 0.51 EUR
1000+ 0.39 EUR
3000+ 0.36 EUR
6000+ 0.35 EUR
Mindestbestellmenge: 52
RUF025N02FRATLRohm SemiconductorDescription: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.32 EUR
Mindestbestellmenge: 3000
RUF025N02FRATLROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Pulsed drain current: 5A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±10V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RUF025N02FRATLRohm SemiconductorDescription: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6230 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.96 EUR
32+ 0.82 EUR
100+ 0.57 EUR
500+ 0.44 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 28
RUF025N02TLRohm SemiconductorDescription: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
auf Bestellung 19828 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
22+ 1.24 EUR
100+ 0.86 EUR
500+ 0.72 EUR
1000+ 0.61 EUR
Mindestbestellmenge: 19
RUF025N02TLROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Pulsed drain current: 5A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±10V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RUF025N02TLROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Pulsed drain current: 5A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±10V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
RUF025N02TLROHM SemiconductorMOSFET Med Pwr, Sw MOSFET N Chan, 20V, 2A
auf Bestellung 20271 Stücke:
Lieferzeit 14-28 Tag (e)
36+1.45 EUR
42+ 1.26 EUR
100+ 0.88 EUR
500+ 0.73 EUR
1000+ 0.6 EUR
3000+ 0.5 EUR
Mindestbestellmenge: 36
RUF025N02TLRohm SemiconductorDescription: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.54 EUR
6000+ 0.51 EUR
9000+ 0.48 EUR
Mindestbestellmenge: 3000
RUF025N02TL
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RUF36
auf Bestellung 148 Stücke:
Lieferzeit 21-28 Tag (e)
RUFE185Tyco
auf Bestellung 1680000 Stücke:
Lieferzeit 21-28 Tag (e)