Produkte > V9N
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||||
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| V9N | Saia-Burgess | Basic / Snap Action Switches Metal house microswitch | auf Bestellung 179 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N2SW0C-AZE8Z-1 | Carling Technologies | Description: SWITCH ROCKER SPST 0.4VA 24V Packaging: Bulk Current Rating (Amps): 0.4VA (DC), 15A (DC) Mounting Type: Panel Mount, Snap-In Circuit: SPST Switch Function: On-Off Operating Temperature: -40°C ~ 85°C Termination Style: Quick Connect - 0.250" (6.3mm) Actuator Type: Locking Approval Agency: CSA, UL, VDE Ingress Protection: IP66/IP68 - Dust Tight, Water Resistant, Waterproof Panel Cutout Dimensions: Rectangular - 36.83mm x 21.08mm Color - Actuator/Cap: Black Actuator Marking: High Beam, Vertical Voltage Rating - DC: 24 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| V9N3103-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 100V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1150pF @ 4V, 1MHz Current - Average Rectified (Io): 2.7A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V | auf Bestellung 5900 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3103-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 100V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1150pF @ 4V, 1MHz Current - Average Rectified (Io): 2.7A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| V9N3103HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 100V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1150pF @ 4V, 1MHz Current - Average Rectified (Io): 2.7A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3103HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 100V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1150pF @ 4V, 1MHz Current - Average Rectified (Io): 2.7A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 660 mV @ 9 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3202-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 200V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 500pF @ 4V, 1MHz Current - Average Rectified (Io): 2.2A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3202-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 200V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 500pF @ 4V, 1MHz Current - Average Rectified (Io): 2.2A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3202HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 200V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 500pF @ 4V, 1MHz Current - Average Rectified (Io): 2.2A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3202HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 200V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 500pF @ 4V, 1MHz Current - Average Rectified (Io): 2.2A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 200 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3L63-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 60V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1550pF @ 4V, 1MHz Current - Average Rectified (Io): 3.1A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3L63-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 60V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1550pF @ 4V, 1MHz Current - Average Rectified (Io): 3.1A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3L63HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 60V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1550pF @ 4V, 1MHz Current - Average Rectified (Io): 3.1A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3L63HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 60V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1550pF @ 4V, 1MHz Current - Average Rectified (Io): 3.1A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 9 A Current - Reverse Leakage @ Vr: 200 µA @ 60 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3M103-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 100V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1100pF @ 4V, 1MHz Current - Average Rectified (Io): 2.8A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A Current - Reverse Leakage @ Vr: 220 µA @ 100 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3M103-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 100V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1100pF @ 4V, 1MHz Current - Average Rectified (Io): 2.8A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A Current - Reverse Leakage @ Vr: 220 µA @ 100 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3M103HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 100V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1100pF @ 4V, 1MHz Current - Average Rectified (Io): 2.8A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A Current - Reverse Leakage @ Vr: 220 µA @ 100 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3M103HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 100V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1100pF @ 4V, 1MHz Current - Average Rectified (Io): 2.8A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 9 A Current - Reverse Leakage @ Vr: 220 µA @ 100 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3M153-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 150V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 510pF @ 4V, 1MHz Current - Average Rectified (Io): 2.4A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3M153-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 150V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 510pF @ 4V, 1MHz Current - Average Rectified (Io): 2.4A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3M153HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 150V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 510pF @ 4V, 1MHz Current - Average Rectified (Io): 2.4A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3M153HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 150V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 510pF @ 4V, 1MHz Current - Average Rectified (Io): 2.4A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 9 A Current - Reverse Leakage @ Vr: 100 µA @ 150 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3M63-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 60V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A Current - Reverse Leakage @ Vr: 25 µA @ 60 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3M63-M3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 60V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A Current - Reverse Leakage @ Vr: 25 µA @ 60 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3M63HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 60V DFN33A TMBS RECT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A Current - Reverse Leakage @ Vr: 25 µA @ 60 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9N3M63HM3/I | Vishay General Semiconductor - Diodes Division | Description: 9A, 60V DFN33A TMBS RECT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1400pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DFN33A Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 9 A Current - Reverse Leakage @ Vr: 25 µA @ 60 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9NLR | Saia-Burgess | Basic / Snap Action Switches Metal house microswitch | auf Bestellung 126 Stücke: Lieferzeit 10-14 Tag (e) |
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| V9NLR1 | Saia-Burgess | Basic / Snap Action Switches Metal house microswitch | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| V9NLR1V | Saia-Burgess | Basic / Snap Action Switches Metal house microswitch | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| V9NLRV | Saia-Burgess | Basic / Snap Action Switches Metal house microswitch | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| V9NMR | Saia-Burgess | Basic / Snap Action Switches Metal house microswitch | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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